WO2009001614A1 - 成膜装置 - Google Patents

成膜装置 Download PDF

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Publication number
WO2009001614A1
WO2009001614A1 PCT/JP2008/058250 JP2008058250W WO2009001614A1 WO 2009001614 A1 WO2009001614 A1 WO 2009001614A1 JP 2008058250 W JP2008058250 W JP 2008058250W WO 2009001614 A1 WO2009001614 A1 WO 2009001614A1
Authority
WO
WIPO (PCT)
Prior art keywords
filming
base material
cylindrical target
evaporation source
erosion
Prior art date
Application number
PCT/JP2008/058250
Other languages
English (en)
French (fr)
Inventor
Hiroshi Tamagaki
Original Assignee
Kabushiki Kaisha Kobe Seiko Sho
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kabushiki Kaisha Kobe Seiko Sho filed Critical Kabushiki Kaisha Kobe Seiko Sho
Priority to CN200880021777.9A priority Critical patent/CN101688294B/zh
Priority to US12/663,977 priority patent/US20100187104A1/en
Priority to DE112008001676T priority patent/DE112008001676T5/de
Publication of WO2009001614A1 publication Critical patent/WO2009001614A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

本発明は、均一な膜厚の被膜を容易に形成することができ、しかも量産性に優れた成膜装置を提供することを目的とする。そのために、複数の基材保持部７を有する基材ホルダ２と、成膜用蒸発源３とを備える。成膜用蒸発源３は、円筒状ターゲット１１を含み、その中心軸と平行な方向の２本の直線部とこれらの直線部の両端同士をつなぐ弧状部とを有する形状のエロージョン領域が円筒状ターゲット１１の表面に形成され、このエロージョン領域から円筒状ターゲット１１の径方向外側に成膜粒子が蒸発する。基材ホルダ２は、各基材Ｗを、その凹状成膜面Ｓがエロージョン領域と対向する成膜位置にそれぞれ位置させるように、基材保持部７の並び方向に移動する。
PCT/JP2008/058250 2007-06-25 2008-04-30 成膜装置 WO2009001614A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN200880021777.9A CN101688294B (zh) 2007-06-25 2008-04-30 成膜装置
US12/663,977 US20100187104A1 (en) 2007-06-25 2008-04-30 Film formation apparatus
DE112008001676T DE112008001676T5 (de) 2007-06-25 2008-04-30 Filmbildungsapparat

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-165737 2007-06-25
JP2007165737A JP5069956B2 (ja) 2007-06-25 2007-06-25 成膜装置

Publications (1)

Publication Number Publication Date
WO2009001614A1 true WO2009001614A1 (ja) 2008-12-31

Family

ID=40185437

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058250 WO2009001614A1 (ja) 2007-06-25 2008-04-30 成膜装置

Country Status (5)

Country Link
US (1) US20100187104A1 (ja)
JP (1) JP5069956B2 (ja)
CN (1) CN101688294B (ja)
DE (1) DE112008001676T5 (ja)
WO (1) WO2009001614A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013232974A (ja) * 2010-01-13 2013-11-14 Toshiba Corp 動画像符号化装置および復号装置
JP2014060744A (ja) * 2010-01-13 2014-04-03 Toshiba Corp 動画像符号化装置および復号装置
JP2014534341A (ja) * 2011-10-24 2014-12-18 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Ｐｖｄアレイ用の多方向レーストラック回転カソード
JP2017002404A (ja) * 2016-06-27 2017-01-05 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Ｐｖｄアレイ用の多方向レーストラック回転カソード
US10869393B2 (en) 2015-06-29 2020-12-15 Microsoft Technology Licensing, Llc Pedestal mounting of sensor system

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140003440A (ko) 2010-11-17 2014-01-09 솔레라스 어드밴스드 코팅스 비브이비에이 소프트 스퍼터링 마그네트론 시스템
CN102071400A (zh) * 2011-02-11 2011-05-25 张敬祎 一种防止微波反应溅射台靶中毒的金属靶装置
DE102012003828A1 (de) * 2012-02-29 2013-08-29 Von Ardenne Anlagentechnik Gmbh Verfahren und Vorrichtung zur Abscheidung eines Schichtstapels eines Metalloxids mit wechselnder Leitfähigkeit
KR102337791B1 (ko) * 2015-04-09 2021-12-08 어플라이드 머티어리얼스, 인코포레이티드 마그네트론 스퍼터링을 위한 방법 및 장치
CN108203812B (zh) * 2018-01-25 2020-02-07 京东方科技集团股份有限公司 一种基板固定载具、蒸镀设备及蒸镀方法
CN109972092B (zh) * 2019-05-20 2021-07-06 中国电子科技集团公司第十二研究所 一种凹型基体的表面处理装置
EP3886139B1 (en) * 2020-03-16 2024-02-07 Vapor Technologies, Inc. Convertible magnetics for rotary cathode

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03115560A (ja) * 1989-09-28 1991-05-16 Daido Metal Co Ltd すべり軸受の製造方法
JPH0565636A (ja) * 1991-01-29 1993-03-19 Boc Group Inc:The 円筒マグネトロンシールド構造
JP2001525490A (ja) * 1997-12-03 2001-12-11 フェデラル―モーグル・ウイースバーデン・ゲゼルシヤフト・ミト・ベシュレンクテル・ハフツング・ウント・コンパニー・コマンデイトゲゼルシヤフト すべり軸受に真空薄膜成形を行うための装置
JP2005213585A (ja) * 2004-01-29 2005-08-11 Konica Minolta Opto Inc マグネトロンスパッタ装置

Family Cites Families (11)

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DE3717712A1 (de) * 1987-05-26 1988-12-15 Leybold Ag Vorrichtung zur halterung von werkstuecken
JPH05295536A (ja) 1992-04-24 1993-11-09 Fuji Electric Co Ltd マグネトロンスパッタリングカソード
JP2679920B2 (ja) 1992-09-28 1997-11-19 大同メタル工業株式会社 非焼付性に優れたオーバーレイを有するすべり軸受材料
CA2120875C (en) * 1993-04-28 1999-07-06 The Boc Group, Inc. Durable low-emissivity solar control thin film coating
JP2838032B2 (ja) 1993-07-20 1998-12-16 大同メタル工業株式会社 高負荷用すべり軸受材料およびその製造方法
US20030118586A1 (en) * 2000-08-31 2003-06-26 Shuji Hinuma G protein coupled receptor protein, production and use thereof
JP2003096562A (ja) 2001-09-25 2003-04-03 Kobe Steel Ltd マグネトロンスパッタ装置
JP2004010915A (ja) 2002-06-04 2004-01-15 Ushio Inc マグネトロンスパッタ装置
DE10336422A1 (de) * 2003-08-08 2005-03-17 Applied Films Gmbh & Co. Kg Vorrichtung zur Kathodenzerstäubung
JP2005133110A (ja) * 2003-10-28 2005-05-26 Konica Minolta Opto Inc スパッタリング装置
SG118232A1 (en) * 2004-02-27 2006-06-27 Superiorcoat Private Ltd Cathodic arc coating apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03115560A (ja) * 1989-09-28 1991-05-16 Daido Metal Co Ltd すべり軸受の製造方法
JPH0565636A (ja) * 1991-01-29 1993-03-19 Boc Group Inc:The 円筒マグネトロンシールド構造
JP2001525490A (ja) * 1997-12-03 2001-12-11 フェデラル―モーグル・ウイースバーデン・ゲゼルシヤフト・ミト・ベシュレンクテル・ハフツング・ウント・コンパニー・コマンデイトゲゼルシヤフト すべり軸受に真空薄膜成形を行うための装置
JP2005213585A (ja) * 2004-01-29 2005-08-11 Konica Minolta Opto Inc マグネトロンスパッタ装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013232974A (ja) * 2010-01-13 2013-11-14 Toshiba Corp 動画像符号化装置および復号装置
JP2014060744A (ja) * 2010-01-13 2014-04-03 Toshiba Corp 動画像符号化装置および復号装置
JP2014534341A (ja) * 2011-10-24 2014-12-18 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Ｐｖｄアレイ用の多方向レーストラック回転カソード
US10869393B2 (en) 2015-06-29 2020-12-15 Microsoft Technology Licensing, Llc Pedestal mounting of sensor system
JP2017002404A (ja) * 2016-06-27 2017-01-05 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Ｐｖｄアレイ用の多方向レーストラック回転カソード

Also Published As

Publication number Publication date
CN101688294A (zh) 2010-03-31
JP5069956B2 (ja) 2012-11-07
CN101688294B (zh) 2013-02-06
US20100187104A1 (en) 2010-07-29
JP2009001884A (ja) 2009-01-08
DE112008001676T5 (de) 2010-08-05

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