JP2014509446A5 - - Google Patents

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Publication number
JP2014509446A5
JP2014509446A5 JP2013547532A JP2013547532A JP2014509446A5 JP 2014509446 A5 JP2014509446 A5 JP 2014509446A5 JP 2013547532 A JP2013547532 A JP 2013547532A JP 2013547532 A JP2013547532 A JP 2013547532A JP 2014509446 A5 JP2014509446 A5 JP 2014509446A5
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JP
Japan
Prior art keywords
substrate
electrostatic clamp
operate
heating block
torr
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JP2013547532A
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English (en)
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JP6052184B2 (ja
JP2014509446A (ja
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Priority claimed from US12/983,710 external-priority patent/US8669540B2/en
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Publication of JP2014509446A publication Critical patent/JP2014509446A/ja
Publication of JP2014509446A5 publication Critical patent/JP2014509446A5/ja
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Description

図１ａは、ベース１２と加熱ブロック１４とが互いに結合される従来技術に係る静電クランプ１０の構成を示す。静電クランプ１０は加熱ブロック１４により支持される基板を抵抗加熱するのに用いられ得る加熱器（図示せず）を含む。静電クランプ１０は基板に対し１以上の処理を行う低圧力チャンバなどの処理チャンバ内の基板ホルダとして動作してもよい。そのような低圧力チャンバの例としては、例えば基板の処理の前に１０−７トル以下の圧力へ減圧を行い、１０−７〜１００ トルの範囲の環境ガス圧において動作し得るプラズマおよびイオンビームツールが挙げられる。
JP2013547532A 2011-01-03 2011-12-19 静電クランプおよびイオン注入システム Active JP6052184B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/983,710 US8669540B2 (en) 2011-01-03 2011-01-03 System and method for gas leak control in a substrate holder
US12/983,710 2011-01-03
PCT/US2011/065796 WO2012094139A1 (en) 2011-01-03 2011-12-19 System and method for gas leak control in a substrate holder

Publications (3)

Publication Number Publication Date
JP2014509446A JP2014509446A (ja) 2014-04-17
JP2014509446A5 true JP2014509446A5 (ja) 2014-09-18
JP6052184B2 JP6052184B2 (ja) 2016-12-27

Family

ID=45569727

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013547532A Active JP6052184B2 (ja) 2011-01-03 2011-12-19 静電クランプおよびイオン注入システム

Country Status (6)

Country Link
US (1) US8669540B2 (ja)
JP (1) JP6052184B2 (ja)
KR (1) KR101937911B1 (ja)
CN (2) CN105552004B (ja)
TW (1) TWI484588B (ja)
WO (1) WO2012094139A1 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9869392B2 (en) 2011-10-20 2018-01-16 Lam Research Corporation Edge seal for lower electrode assembly
US9859142B2 (en) 2011-10-20 2018-01-02 Lam Research Corporation Edge seal for lower electrode assembly
US20140318455A1 (en) * 2013-04-26 2014-10-30 Varian Semiconductor Equipment Associates, Inc. Low emissivity electrostatic chuck
US10090211B2 (en) 2013-12-26 2018-10-02 Lam Research Corporation Edge seal for lower electrode assembly
US10535499B2 (en) * 2017-11-03 2020-01-14 Varian Semiconductor Equipment Associates, Inc. Varied component density for thermal isolation
CN111816604B (zh) * 2020-08-18 2021-03-12 北京智创芯源科技有限公司 一种晶片刻蚀方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0997830A (ja) * 1995-07-21 1997-04-08 Fuji Electric Co Ltd 静電チャックホールダ、ウエハ保持機構ならびにその使用方法
JPH09213781A (ja) * 1996-02-01 1997-08-15 Tokyo Electron Ltd 載置台構造及びそれを用いた処理装置
JP4256503B2 (ja) * 1997-10-30 2009-04-22 東京エレクトロン株式会社 真空処理装置
US6019164A (en) * 1997-12-31 2000-02-01 Temptronic Corporation Workpiece chuck
JP2001068538A (ja) * 1999-06-21 2001-03-16 Tokyo Electron Ltd 電極構造、載置台構造、プラズマ処理装置及び処理装置
JP2002009139A (ja) * 2000-06-20 2002-01-11 Nikon Corp 静電チャック
JP2002009064A (ja) * 2000-06-21 2002-01-11 Hitachi Ltd 試料の処理装置及び試料の処理方法
US7161121B1 (en) * 2001-04-30 2007-01-09 Lam Research Corporation Electrostatic chuck having radial temperature control capability
JP4698097B2 (ja) * 2001-09-26 2011-06-08 京セラ株式会社 ウェハ支持部材
JP2003124298A (ja) * 2001-10-17 2003-04-25 Anelva Corp プラズマ支援ウェハー処理反応容器の二重静電チャックウェハーステージ
JP3881908B2 (ja) * 2002-02-26 2007-02-14 株式会社日立ハイテクノロジーズ プラズマ処理装置
US6646233B2 (en) * 2002-03-05 2003-11-11 Hitachi High-Technologies Corporation Wafer stage for wafer processing apparatus and wafer processing method
JP2004282047A (ja) * 2003-02-25 2004-10-07 Kyocera Corp 静電チャック
US6897403B2 (en) * 2003-03-05 2005-05-24 Hitachi High-Technologies Corporation Plasma processing method and plasma processing apparatus
JP2006261541A (ja) * 2005-03-18 2006-09-28 Tokyo Electron Ltd 基板載置台、基板処理装置および基板処理方法
US7815740B2 (en) * 2005-03-18 2010-10-19 Tokyo Electron Limited Substrate mounting table, substrate processing apparatus and substrate processing method
JP5007179B2 (ja) * 2007-08-29 2012-08-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7709364B1 (en) * 2009-05-19 2010-05-04 Advanced Ion Beam Technology, Inc. Method and apparatus for low temperature ion implantation
US9082804B2 (en) * 2011-02-07 2015-07-14 Varian Semiconductor Equipment Associates, Inc. Triboelectric charge controlled electrostatic clamp

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