WO2008153099A1 - 情報記録再生装置 - Google Patents

情報記録再生装置 Download PDF

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Publication number
WO2008153099A1
WO2008153099A1 PCT/JP2008/060775 JP2008060775W WO2008153099A1 WO 2008153099 A1 WO2008153099 A1 WO 2008153099A1 JP 2008060775 W JP2008060775 W JP 2008060775W WO 2008153099 A1 WO2008153099 A1 WO 2008153099A1
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Prior art keywords
layer
recording layer
reproducing device
recording
group
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PCT/JP2008/060775
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English (en)
French (fr)
Inventor
Kohichi Kubo
Chikayoshi Kamata
Takayuki Tsukamoto
Shinya Aoki
Takahiro Hirai
Toshiro Hiraoka
Original Assignee
Kabushiki Kaisha Toshiba
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Application filed by Kabushiki Kaisha Toshiba filed Critical Kabushiki Kaisha Toshiba
Publication of WO2008153099A1 publication Critical patent/WO2008153099A1/ja
Priority to US12/636,606 priority Critical patent/US8018762B2/en

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0033—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/04—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using record carriers having variable electric resistance; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G11B9/149—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the memorising material or structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/53—Structure wherein the resistive material being in a transistor, e.g. gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/75—Array having a NAND structure comprising, for example, memory cells in series or memory elements in series, a memory element being a memory cell in parallel with an access transistor

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)

Abstract

　電極層及び記録層を有する積層構造と、前記電極層に付加されるバッファ層と、前記記録層に電圧を印加して前記記録層に相変化を発生させて情報を記録する電圧印加部と、を備え、前記記録層は、ＡｘＭｙＸ３（０．１≦ｘ≦１．１、０．７５≦ｙ≦１）で表されるイルメナイト構造であって、前記Ａと前記Ｍは互いに異なる元素であり、前記Ａと前記Ｍの少なくともいずれかは電子が不完全に満たされたｄ軌道を有する遷移元素であり、前記ＡはＢｅ、Ｍｇ、Ｆｅ、Ｃｏ、Ｎｉ、Ｃｕ、Ｚｎよりなる群から選択された少なくともいずれかを含む元素であり、前記ＭはＴｉ、Ｇｅ、Ｓｎ、Ｖ、Ｃｒ、Ｍｎ、Ｆｅ、Ｃｏ、Ｎｉ、Ｎｂ、Ｔａ、Ｍｏ、Ｗ、Ｒｅ、Ｒｕ、Ｒｈよりなる群から選択された少なくともいずれかを含む元素であり、前記ＸはＯ（酸素）、Ｎ（窒素）よりなる群から選択された少なくともいずれかを含む元素である第１化合物を含む第１の層を有することを特徴とする情報記録再生装置が提供される。
PCT/JP2008/060775 2007-06-12 2008-06-12 情報記録再生装置 WO2008153099A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/636,606 US8018762B2 (en) 2007-06-12 2009-12-11 Information recording and reproducing apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-155709 2007-06-12
JP2007155709A JP4792009B2 (ja) 2007-06-12 2007-06-12 情報記録再生装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/636,606 Continuation US8018762B2 (en) 2007-06-12 2009-12-11 Information recording and reproducing apparatus

Publications (1)

Publication Number Publication Date
WO2008153099A1 true WO2008153099A1 (ja) 2008-12-18

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ID=40129704

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US (1) US8018762B2 (ja)
JP (1) JP4792009B2 (ja)
WO (1) WO2008153099A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010090002A1 (ja) * 2009-02-04 2010-08-12 パナソニック株式会社 不揮発性記憶素子

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010029607A1 (ja) * 2008-09-09 2010-03-18 株式会社 東芝 情報記録再生装置
WO2010103609A1 (ja) 2009-03-09 2010-09-16 株式会社 東芝 情報記録再生装置
KR101418919B1 (ko) * 2009-03-30 2014-07-15 가부시끼가이샤 도시바 내식성 부재와 그 제조 방법
JP5477687B2 (ja) * 2009-04-01 2014-04-23 日本電気株式会社 スイッチング素子、スイッチング素子の動作方法、スイッチング素子の製造方法、書き換え可能な論理集積回路およびメモリ素子
US8462542B2 (en) * 2010-06-24 2013-06-11 Texas Instruments Incorporated Bit-by-bit write assist for solid-state memory
JP5439420B2 (ja) * 2011-03-22 2014-03-12 株式会社東芝 記憶装置
KR20130043533A (ko) * 2011-10-20 2013-04-30 삼성전자주식회사 도전성 버퍼 패턴을 갖는 비-휘발성 메모리소자 및 그 형성 방법
KR20200014801A (ko) 2017-06-02 2020-02-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 부품, 및 전자 기기
JP7195068B2 (ja) 2017-06-26 2022-12-23 株式会社半導体エネルギー研究所 半導体装置、電子機器
JP7265475B2 (ja) 2017-06-27 2023-04-26 株式会社半導体エネルギー研究所 半導体装置
US11374012B2 (en) 2017-07-06 2022-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of semiconductor device
US10665604B2 (en) 2017-07-21 2020-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor wafer, memory device, and electronic device

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JP4205938B2 (ja) 2002-12-05 2009-01-07 シャープ株式会社 不揮発性メモリ装置
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WO2005106955A1 (ja) * 2004-04-27 2005-11-10 Matsushita Electric Industrial Co., Ltd. 記憶素子
JP2007073779A (ja) * 2005-09-07 2007-03-22 Elpida Memory Inc 不揮発性メモリ素子及びその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010090002A1 (ja) * 2009-02-04 2010-08-12 パナソニック株式会社 不揮発性記憶素子
JP4592828B2 (ja) * 2009-02-04 2010-12-08 パナソニック株式会社 不揮発性記憶素子
JPWO2010090002A1 (ja) * 2009-02-04 2012-08-09 パナソニック株式会社 不揮発性記憶素子
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US8405076B2 (en) 2009-02-04 2013-03-26 Panasonic Corporation Nonvolatile memory element

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US8018762B2 (en) 2011-09-13
JP2008310858A (ja) 2008-12-25
US20100142261A1 (en) 2010-06-10
JP4792009B2 (ja) 2011-10-12

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