WO2008153005A1 - 情報記録再生装置 - Google Patents
情報記録再生装置 Download PDFInfo
- Publication number
- WO2008153005A1 WO2008153005A1 PCT/JP2008/060562 JP2008060562W WO2008153005A1 WO 2008153005 A1 WO2008153005 A1 WO 2008153005A1 JP 2008060562 W JP2008060562 W JP 2008060562W WO 2008153005 A1 WO2008153005 A1 WO 2008153005A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- reproducing device
- information recording
- recording
- recording layer
- group composed
- Prior art date
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/003—Cell access
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/04—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using record carriers having variable electric resistance; Record carriers therefor
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
- G11B9/1418—Disposition or mounting of heads or record carriers
- G11B9/1427—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement
- G11B9/1436—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement with provision for moving the heads or record carriers relatively to each other
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
- G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
- G11B9/1472—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the form
- G11B9/1481—Auxiliary features, e.g. reference or indexing surfaces
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
- G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
- G11B9/149—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the memorising material or structure
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of the switching material, e.g. layer deposition
- H10N70/026—Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8413—Electrodes adapted for resistive heating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/10—Resistive cells; Technology aspects
- G11C2213/17—Memory cell being a nanowire transistor
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/32—Material having simple binary metal oxide structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/51—Structure including a barrier layer preventing or limiting migration, diffusion of ions or charges or formation of electrolytes near an electrode
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/56—Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/72—Array wherein the access device being a diode
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/75—Array having a NAND structure comprising, for example, memory cells in series or memory elements in series, a memory element being a memory cell in parallel with an access transistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
Abstract
本発明の例に関わる情報記録再生装置は、記録層と、前記記録層に電圧を印加して前記記録層に相変化を発生させて情報を記録する手段とを具備し、前記記録層は、少なくとも、化学式1:AxMyX4 (0.1≦x≦2.2、1.5≦y≦2)で表されるスピネル構造を有する第1化合物を含むように構成されることを特徴とする。但し、Aは、Zn, Cd, Hgのグループから選択される少なくとも1種類の元素であり、Mは、Cr, Mo, W, Mn, Reのグループから選択される少なくとも1種類の遷移元素であり、Xは、Oである。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/636,554 US8014189B2 (en) | 2007-06-12 | 2009-12-11 | Information recording/reproducing device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007155677A JP4792006B2 (ja) | 2007-06-12 | 2007-06-12 | 情報記録再生装置 |
JP2007-155677 | 2007-06-12 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/636,554 Continuation US8014189B2 (en) | 2007-06-12 | 2009-12-11 | Information recording/reproducing device |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008153005A1 true WO2008153005A1 (ja) | 2008-12-18 |
Family
ID=40129610
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/060562 WO2008153005A1 (ja) | 2007-06-12 | 2008-06-09 | 情報記録再生装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8014189B2 (ja) |
JP (1) | JP4792006B2 (ja) |
WO (1) | WO2008153005A1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009224403A (ja) * | 2008-03-13 | 2009-10-01 | Toshiba Corp | 情報記録素子及びそれを備えた情報記録再生装置 |
JP5306363B2 (ja) * | 2008-09-09 | 2013-10-02 | 株式会社東芝 | 情報記録再生装置 |
JP5044586B2 (ja) | 2009-02-24 | 2012-10-10 | 株式会社東芝 | 半導体記憶装置 |
KR20110015907A (ko) * | 2009-08-10 | 2011-02-17 | 삼성전자주식회사 | 저항체를 이용한 멀티 레벨 메모리 장치 |
JP5508944B2 (ja) | 2010-06-08 | 2014-06-04 | 株式会社東芝 | 半導体記憶装置 |
JP2012138512A (ja) * | 2010-12-27 | 2012-07-19 | Toshiba Corp | 情報記録再生装置 |
CN103236498B (zh) * | 2013-04-25 | 2015-10-28 | 桂林电子科技大学 | 一种非极性阻变存储器及其制备方法 |
US9129677B2 (en) * | 2013-11-26 | 2015-09-08 | Kabushiki Kaisha Toshiba | Memory device and method of controlling memory device |
JP6448594B2 (ja) * | 2016-09-13 | 2019-01-09 | 株式会社東芝 | 導電性プローブ、電気特性評価システム、走査型プローブ顕微鏡、導電性プローブ製造方法、及び、電気特性測定方法 |
JP7191820B2 (ja) | 2017-06-02 | 2022-12-19 | 株式会社半導体エネルギー研究所 | 半導体装置、電子部品及び電子機器 |
JP7195068B2 (ja) | 2017-06-26 | 2022-12-23 | 株式会社半導体エネルギー研究所 | 半導体装置、電子機器 |
US11133336B2 (en) | 2017-06-27 | 2021-09-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
US11374012B2 (en) | 2017-07-06 | 2022-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method of semiconductor device |
US10665604B2 (en) | 2017-07-21 | 2020-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, semiconductor wafer, memory device, and electronic device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005106955A1 (ja) * | 2004-04-27 | 2005-11-10 | Matsushita Electric Industrial Co., Ltd. | 記憶素子 |
JP2007073779A (ja) * | 2005-09-07 | 2007-03-22 | Elpida Memory Inc | 不揮発性メモリ素子及びその製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4249992B2 (ja) | 2002-12-04 | 2009-04-08 | シャープ株式会社 | 半導体記憶装置及びメモリセルの書き込み並びに消去方法 |
JP2005252068A (ja) | 2004-03-05 | 2005-09-15 | Sony Corp | 記憶装置 |
DE602004032392D1 (de) * | 2004-04-16 | 2011-06-01 | Panasonic Corp | Dünnfilm-speicherbaustein mit variablem widerstand |
CN100477225C (zh) | 2004-09-09 | 2009-04-08 | 松下电器产业株式会社 | 电阻变化元件及其制造方法 |
US7733684B2 (en) * | 2005-12-13 | 2010-06-08 | Kabushiki Kaisha Toshiba | Data read/write device |
KR101408716B1 (ko) * | 2006-10-24 | 2014-06-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 저장 디바이스를 포함하는 반도체 디바이스와 이를 구동하기 위한 방법 |
JP4792007B2 (ja) * | 2007-06-12 | 2011-10-12 | 株式会社東芝 | 情報記録再生装置 |
US7593255B2 (en) * | 2007-12-07 | 2009-09-22 | Qimonda North America Corp. | Integrated circuit for programming a memory element |
-
2007
- 2007-06-12 JP JP2007155677A patent/JP4792006B2/ja not_active Expired - Fee Related
-
2008
- 2008-06-09 WO PCT/JP2008/060562 patent/WO2008153005A1/ja active Application Filing
-
2009
- 2009-12-11 US US12/636,554 patent/US8014189B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005106955A1 (ja) * | 2004-04-27 | 2005-11-10 | Matsushita Electric Industrial Co., Ltd. | 記憶素子 |
JP2007073779A (ja) * | 2005-09-07 | 2007-03-22 | Elpida Memory Inc | 不揮発性メモリ素子及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20100142091A1 (en) | 2010-06-10 |
JP2008310856A (ja) | 2008-12-25 |
JP4792006B2 (ja) | 2011-10-12 |
US8014189B2 (en) | 2011-09-06 |
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