WO2008153006A1 - 情報記録再生装置 - Google Patents

情報記録再生装置 Download PDF

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Publication number
WO2008153006A1
WO2008153006A1 PCT/JP2008/060563 JP2008060563W WO2008153006A1 WO 2008153006 A1 WO2008153006 A1 WO 2008153006A1 JP 2008060563 W JP2008060563 W JP 2008060563W WO 2008153006 A1 WO2008153006 A1 WO 2008153006A1
Authority
WO
WIPO (PCT)
Prior art keywords
reproducing device
information recording
recording
recording layer
group composed
Prior art date
Application number
PCT/JP2008/060563
Other languages
English (en)
French (fr)
Inventor
Takayuki Tsukamoto
Kohichi Kubo
Chikayoshi Kamata
Takahiro Hirai
Shinya Aoki
Toshiro Hiraoka
Original Assignee
Kabushiki Kaisha Toshiba
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kabushiki Kaisha Toshiba filed Critical Kabushiki Kaisha Toshiba
Publication of WO2008153006A1 publication Critical patent/WO2008153006A1/ja
Priority to US12/636,366 priority Critical patent/US8188455B2/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G11B9/149—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the memorising material or structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/04—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using record carriers having variable electric resistance; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1418—Disposition or mounting of heads or record carriers
    • G11B9/1427—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement
    • G11B9/1436—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement with provision for moving the heads or record carriers relatively to each other
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G11B9/1472—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the form
    • G11B9/1481—Auxiliary features, e.g. reference or indexing surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)

Abstract

　本発明の例に関わる情報記録再生装置は、記録層と、前記記録層に電圧を印加して前記記録層に相変化を発生させて情報を記録する手段とを具備し、前記記録層は、少なくとも、化学式１：AxMyX4 (0.１≦x≦2.2、1.0≦y≦2)で表されるスピネル構造を有する第１化合物を含むように構成されることを特徴とする。但し、Aは、Zn, Cd, Hgのグループから選択される少なくとも1種類の元素であり、Mは、Ti, Zr, Hf, V, Nb, Taのグループから選択される少なくとも１種類の遷移元素であり、Xは、Oである。
PCT/JP2008/060563 2007-06-12 2008-06-09 情報記録再生装置 WO2008153006A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/636,366 US8188455B2 (en) 2007-06-12 2009-12-11 Information recording/reproducing device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-155678 2007-06-12
JP2007155678A JP4792007B2 (ja) 2007-06-12 2007-06-12 情報記録再生装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/636,366 Continuation US8188455B2 (en) 2007-06-12 2009-12-11 Information recording/reproducing device

Publications (1)

Publication Number Publication Date
WO2008153006A1 true WO2008153006A1 (ja) 2008-12-18

Family

ID=40129611

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060563 WO2008153006A1 (ja) 2007-06-12 2008-06-09 情報記録再生装置

Country Status (3)

Country Link
US (1) US8188455B2 (ja)
JP (1) JP4792007B2 (ja)
WO (1) WO2008153006A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102422722A (zh) * 2009-04-03 2012-04-18 瓦里安半导体设备公司 等离子体处理装置

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4792007B2 (ja) 2007-06-12 2011-10-12 株式会社東芝 情報記録再生装置
JP4792006B2 (ja) * 2007-06-12 2011-10-12 株式会社東芝 情報記録再生装置
JPWO2009116139A1 (ja) * 2008-03-18 2011-07-21 株式会社東芝 情報記録再生装置
WO2009122568A1 (ja) * 2008-04-01 2009-10-08 株式会社 東芝 情報記録再生装置
JP5306363B2 (ja) * 2008-09-09 2013-10-02 株式会社東芝 情報記録再生装置
JP5558085B2 (ja) * 2009-12-01 2014-07-23 株式会社東芝 抵抗変化メモリ
US8735858B2 (en) * 2010-04-30 2014-05-27 Hewlett-Packard Development Company, L.P. Ionic devices with interacting species
JP5457961B2 (ja) * 2010-07-16 2014-04-02 株式会社東芝 半導体記憶装置
JP2012138512A (ja) * 2010-12-27 2012-07-19 Toshiba Corp 情報記録再生装置
US9224773B2 (en) 2011-11-30 2015-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Metal shielding layer in backside illumination image sensor chips and methods for forming the same
US9190454B2 (en) * 2013-03-19 2015-11-17 Kabushiki Kaisha Toshiba Memory device
GB2516841A (en) * 2013-07-31 2015-02-11 Ibm Resistive memory element based on oxygen-doped amorphous carbon
US10734447B2 (en) * 2018-10-22 2020-08-04 International Business Machines Corporation Field-effect transistor unit cells for neural networks with differential weights

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005106955A1 (ja) * 2004-04-27 2005-11-10 Matsushita Electric Industrial Co., Ltd. 記憶素子
JP2007073779A (ja) * 2005-09-07 2007-03-22 Elpida Memory Inc 不揮発性メモリ素子及びその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4249992B2 (ja) 2002-12-04 2009-04-08 シャープ株式会社 半導体記憶装置及びメモリセルの書き込み並びに消去方法
JP2005252068A (ja) 2004-03-05 2005-09-15 Sony Corp 記憶装置
US8263961B2 (en) * 2004-04-16 2012-09-11 Panasonic Corporation Thin film memory device having a variable resistance
JP4701427B2 (ja) 2004-04-28 2011-06-15 パナソニック株式会社 スイッチング素子およびそれを用いたアレイ型機能素子
US7733684B2 (en) 2005-12-13 2010-06-08 Kabushiki Kaisha Toshiba Data read/write device
JP4792007B2 (ja) 2007-06-12 2011-10-12 株式会社東芝 情報記録再生装置
JPWO2009116139A1 (ja) 2008-03-18 2011-07-21 株式会社東芝 情報記録再生装置
WO2009122568A1 (ja) 2008-04-01 2009-10-08 株式会社 東芝 情報記録再生装置
WO2009122569A1 (ja) 2008-04-01 2009-10-08 株式会社 東芝 情報記録再生装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005106955A1 (ja) * 2004-04-27 2005-11-10 Matsushita Electric Industrial Co., Ltd. 記憶素子
JP2007073779A (ja) * 2005-09-07 2007-03-22 Elpida Memory Inc 不揮発性メモリ素子及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102422722A (zh) * 2009-04-03 2012-04-18 瓦里安半导体设备公司 等离子体处理装置

Also Published As

Publication number Publication date
US8188455B2 (en) 2012-05-29
JP4792007B2 (ja) 2011-10-12
JP2008310857A (ja) 2008-12-25
US20100127235A1 (en) 2010-05-27

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