WO2008153100A1 - 情報記録再生装置 - Google Patents

情報記録再生装置 Download PDF

Info

Publication number
WO2008153100A1
WO2008153100A1 PCT/JP2008/060776 JP2008060776W WO2008153100A1 WO 2008153100 A1 WO2008153100 A1 WO 2008153100A1 JP 2008060776 W JP2008060776 W JP 2008060776W WO 2008153100 A1 WO2008153100 A1 WO 2008153100A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
recording layer
recording
reproducing device
cation elements
Prior art date
Application number
PCT/JP2008/060776
Other languages
English (en)
French (fr)
Inventor
Takayuki Tsukamoto
Kohichi Kubo
Chikayoshi Kamata
Takahiro Hirai
Shinya Aoki
Toshiro Hiraoka
Original Assignee
Kabushiki Kaisha Toshiba
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kabushiki Kaisha Toshiba filed Critical Kabushiki Kaisha Toshiba
Publication of WO2008153100A1 publication Critical patent/WO2008153100A1/ja
Priority to US12/636,646 priority Critical patent/US7995382B2/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/04—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using record carriers having variable electric resistance; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G11B9/149—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the memorising material or structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/53—Structure wherein the resistive material being in a transistor, e.g. gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/75—Array having a NAND structure comprising, for example, memory cells in series or memory elements in series, a memory element being a memory cell in parallel with an access transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)

Abstract

　少なくとも２種類の陽イオン元素を有する複合化合物であって、前記陽イオン元素の少なくともいずれかは電子が不完全に満たされたｄ軌道を有する遷移元素であり、隣接する前記陽イオン元素間の最短距離は０．３２ｎｍ以下である第１化合物を含む第１の層を有する記録層と、前記記録層に電圧を印加して前記記録層に相変化を発生させて情報を記録する電圧印加部と、前記記録層に電圧を印加する電極層と、前記記録層と前記電極層との間に設けられ、前記記録層の配向を制御する配向制御層と、が設けられていることを特徴とする情報記録再生装置が提供される。
PCT/JP2008/060776 2007-06-12 2008-06-12 情報記録再生装置 WO2008153100A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/636,646 US7995382B2 (en) 2007-06-12 2009-12-11 Information recording and reproducing apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-155710 2007-06-12
JP2007155710A JP4792010B2 (ja) 2007-06-12 2007-06-12 情報記録再生装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/636,646 Continuation US7995382B2 (en) 2007-06-12 2009-12-11 Information recording and reproducing apparatus

Publications (1)

Publication Number Publication Date
WO2008153100A1 true WO2008153100A1 (ja) 2008-12-18

Family

ID=40129705

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060776 WO2008153100A1 (ja) 2007-06-12 2008-06-12 情報記録再生装置

Country Status (3)

Country Link
US (1) US7995382B2 (ja)
JP (1) JP4792010B2 (ja)
WO (1) WO2008153100A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013079232A (ja) * 2011-09-30 2013-05-02 Rohm & Haas Electronic Materials Llc 光酸発生剤およびこれを含むフォトレジスト

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5306363B2 (ja) * 2008-09-09 2013-10-02 株式会社東芝 情報記録再生装置
CN102326253B (zh) 2009-02-20 2014-06-25 株式会社村田制作所 电阻记忆元件及其使用方法
WO2010095296A1 (ja) * 2009-02-20 2010-08-26 株式会社村田製作所 抵抗記憶素子およびその使用方法
EP2415904B1 (en) 2009-03-30 2017-11-29 Kabushiki Kaisha Toshiba Method for producing corrosion-resistant member
JP4908555B2 (ja) * 2009-08-05 2012-04-04 株式会社東芝 情報記録再生装置
JP4922375B2 (ja) * 2009-09-18 2012-04-25 株式会社東芝 抵抗変化型メモリ
US10395361B2 (en) 2015-08-10 2019-08-27 Kla-Tencor Corporation Apparatus and methods for inspecting reticles
KR20240015740A (ko) 2017-06-02 2024-02-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 부품, 및 전자 기기
US10600469B2 (en) 2017-06-26 2020-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
WO2019003042A1 (ja) 2017-06-27 2019-01-03 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
US11374012B2 (en) 2017-07-06 2022-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of semiconductor device
US10665604B2 (en) 2017-07-21 2020-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor wafer, memory device, and electronic device
JP7062545B2 (ja) 2018-07-20 2022-05-06 キオクシア株式会社 記憶素子

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005106955A1 (ja) * 2004-04-27 2005-11-10 Matsushita Electric Industrial Co., Ltd. 記憶素子
JP2007073779A (ja) * 2005-09-07 2007-03-22 Elpida Memory Inc 不揮発性メモリ素子及びその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4249992B2 (ja) 2002-12-04 2009-04-08 シャープ株式会社 半導体記憶装置及びメモリセルの書き込み並びに消去方法
US7729158B2 (en) * 2003-04-03 2010-06-01 Kabushiki Kaisha Toshiba Resistance change memory device
JP2005252068A (ja) 2004-03-05 2005-09-15 Sony Corp 記憶装置
US8263961B2 (en) * 2004-04-16 2012-09-11 Panasonic Corporation Thin film memory device having a variable resistance
JP4701427B2 (ja) 2004-04-28 2011-06-15 パナソニック株式会社 スイッチング素子およびそれを用いたアレイ型機能素子
JP2006196566A (ja) * 2005-01-12 2006-07-27 Matsushita Electric Ind Co Ltd 可変抵抗薄膜素子およびそれを用いた不揮発性記憶素子
US7733684B2 (en) * 2005-12-13 2010-06-08 Kabushiki Kaisha Toshiba Data read/write device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005106955A1 (ja) * 2004-04-27 2005-11-10 Matsushita Electric Industrial Co., Ltd. 記憶素子
JP2007073779A (ja) * 2005-09-07 2007-03-22 Elpida Memory Inc 不揮発性メモリ素子及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013079232A (ja) * 2011-09-30 2013-05-02 Rohm & Haas Electronic Materials Llc 光酸発生剤およびこれを含むフォトレジスト
JP2017122100A (ja) * 2011-09-30 2017-07-13 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 光酸発生剤およびこれを含むフォトレジスト

Also Published As

Publication number Publication date
JP2008310859A (ja) 2008-12-25
JP4792010B2 (ja) 2011-10-12
US20100142262A1 (en) 2010-06-10
US7995382B2 (en) 2011-08-09

Similar Documents

Publication Publication Date Title
WO2008153100A1 (ja) 情報記録再生装置
WO2008129683A1 (ja) 情報記録再生装置
WO2008153005A1 (ja) 情報記録再生装置
SG155874A1 (en) System, method and apparatus for flexure-integrated microactuator
WO2008153006A1 (ja) 情報記録再生装置
TW200733102A (en) Non-volatile memory element and method of manufacturing the same
TW200618262A (en) Phase change memory
EP1923871A3 (en) Method of configuring control information of a recording medium, recording and reproducing method using the same, and apparatus thereof
TWI256130B (en) Nonvolatile memory cell with multiple floating gates formed after the select gate and having upward protrusions
WO2009081355A3 (en) Optical disk format for direct writing materials on a substrate
WO2009075316A1 (ja) 記憶装置および情報再記録方法
WO2008088994A3 (en) Method and system for improving domain stability in a ferroelectric media
DE502006001250D1 (de) Mehrfachfensterscheibe mit einem elektrischen einbauelement
WO2008120433A1 (ja) 逆量子化回路、逆量子化方法及び画像再生装置
WO2008153099A1 (ja) 情報記録再生装置
WO2008129684A1 (ja) 情報記録再生装置
TW200746128A (en) Phase change recording medium
TW200609907A (en) Unified control and memory for a combined DVD/HDD system
WO2006076301A3 (en) Microfluidic devices fabricated by direct thick film writing and methods thereof
WO2008136242A1 (ja) 光ピックアップ装置及び対物光学素子
WO2007007218A3 (en) Light modulator
WO2009031630A1 (ja) 垂直磁気記録媒体および磁気記録再生装置
WO2007065155A3 (en) Rewrite strategy and methods and systems for error correction in high-density recording
TW200741696A (en) Hybrid optical disc
TW200627414A (en) Method of writing data on a master substrate for optical recording

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08765520

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08765520

Country of ref document: EP

Kind code of ref document: A1