WO2008153100A1 - 情報記録再生装置 - Google Patents
情報記録再生装置 Download PDFInfo
- Publication number
- WO2008153100A1 WO2008153100A1 PCT/JP2008/060776 JP2008060776W WO2008153100A1 WO 2008153100 A1 WO2008153100 A1 WO 2008153100A1 JP 2008060776 W JP2008060776 W JP 2008060776W WO 2008153100 A1 WO2008153100 A1 WO 2008153100A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- recording layer
- recording
- reproducing device
- cation elements
- Prior art date
Links
- 150000001768 cations Chemical class 0.000 abstract 3
- 150000001875 compounds Chemical class 0.000 abstract 2
- 239000002131 composite material Substances 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 230000007704 transition Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/04—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using record carriers having variable electric resistance; Record carriers therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
- G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
- G11B9/149—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the memorising material or structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/003—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8413—Electrodes adapted for resistive heating
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/53—Structure wherein the resistive material being in a transistor, e.g. gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/75—Array having a NAND structure comprising, for example, memory cells in series or memory elements in series, a memory element being a memory cell in parallel with an access transistor
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
少なくとも2種類の陽イオン元素を有する複合化合物であって、前記陽イオン元素の少なくともいずれかは電子が不完全に満たされたd軌道を有する遷移元素であり、隣接する前記陽イオン元素間の最短距離は0.32nm以下である第1化合物を含む第1の層を有する記録層と、前記記録層に電圧を印加して前記記録層に相変化を発生させて情報を記録する電圧印加部と、前記記録層に電圧を印加する電極層と、前記記録層と前記電極層との間に設けられ、前記記録層の配向を制御する配向制御層と、が設けられていることを特徴とする情報記録再生装置が提供される。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/636,646 US7995382B2 (en) | 2007-06-12 | 2009-12-11 | Information recording and reproducing apparatus |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007155710A JP4792010B2 (ja) | 2007-06-12 | 2007-06-12 | 情報記録再生装置 |
JP2007-155710 | 2007-06-12 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/636,646 Continuation US7995382B2 (en) | 2007-06-12 | 2009-12-11 | Information recording and reproducing apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008153100A1 true WO2008153100A1 (ja) | 2008-12-18 |
Family
ID=40129705
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/060776 WO2008153100A1 (ja) | 2007-06-12 | 2008-06-12 | 情報記録再生装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7995382B2 (ja) |
JP (1) | JP4792010B2 (ja) |
WO (1) | WO2008153100A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013079232A (ja) * | 2011-09-30 | 2013-05-02 | Rohm & Haas Electronic Materials Llc | 光酸発生剤およびこれを含むフォトレジスト |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010029607A1 (ja) * | 2008-09-09 | 2010-03-18 | 株式会社 東芝 | 情報記録再生装置 |
WO2010095296A1 (ja) * | 2009-02-20 | 2010-08-26 | 株式会社村田製作所 | 抵抗記憶素子およびその使用方法 |
CN102326253B (zh) * | 2009-02-20 | 2014-06-25 | 株式会社村田制作所 | 电阻记忆元件及其使用方法 |
AU2010231766B2 (en) | 2009-03-30 | 2013-09-12 | Kabushiki Kaisha Toshiba | Corrosion-resistant member and method for producing same |
JP4908555B2 (ja) * | 2009-08-05 | 2012-04-04 | 株式会社東芝 | 情報記録再生装置 |
JP4922375B2 (ja) * | 2009-09-18 | 2012-04-25 | 株式会社東芝 | 抵抗変化型メモリ |
US10395361B2 (en) | 2015-08-10 | 2019-08-27 | Kla-Tencor Corporation | Apparatus and methods for inspecting reticles |
KR20200014801A (ko) | 2017-06-02 | 2020-02-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 전자 부품, 및 전자 기기 |
JP7195068B2 (ja) | 2017-06-26 | 2022-12-23 | 株式会社半導体エネルギー研究所 | 半導体装置、電子機器 |
WO2019003042A1 (ja) | 2017-06-27 | 2019-01-03 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
JP7234110B2 (ja) | 2017-07-06 | 2023-03-07 | 株式会社半導体エネルギー研究所 | メモリセル及び半導体装置 |
US10665604B2 (en) | 2017-07-21 | 2020-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, semiconductor wafer, memory device, and electronic device |
JP7062545B2 (ja) * | 2018-07-20 | 2022-05-06 | キオクシア株式会社 | 記憶素子 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005106955A1 (ja) * | 2004-04-27 | 2005-11-10 | Matsushita Electric Industrial Co., Ltd. | 記憶素子 |
JP2007073779A (ja) * | 2005-09-07 | 2007-03-22 | Elpida Memory Inc | 不揮発性メモリ素子及びその製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4249992B2 (ja) | 2002-12-04 | 2009-04-08 | シャープ株式会社 | 半導体記憶装置及びメモリセルの書き込み並びに消去方法 |
US7729158B2 (en) * | 2003-04-03 | 2010-06-01 | Kabushiki Kaisha Toshiba | Resistance change memory device |
JP2005252068A (ja) | 2004-03-05 | 2005-09-15 | Sony Corp | 記憶装置 |
KR101046868B1 (ko) * | 2004-04-16 | 2011-07-06 | 파나소닉 주식회사 | 가변저항을 갖는 박막 메모리 장치 |
JP4701427B2 (ja) | 2004-04-28 | 2011-06-15 | パナソニック株式会社 | スイッチング素子およびそれを用いたアレイ型機能素子 |
JP2006196566A (ja) * | 2005-01-12 | 2006-07-27 | Matsushita Electric Ind Co Ltd | 可変抵抗薄膜素子およびそれを用いた不揮発性記憶素子 |
US7733684B2 (en) * | 2005-12-13 | 2010-06-08 | Kabushiki Kaisha Toshiba | Data read/write device |
-
2007
- 2007-06-12 JP JP2007155710A patent/JP4792010B2/ja not_active Expired - Fee Related
-
2008
- 2008-06-12 WO PCT/JP2008/060776 patent/WO2008153100A1/ja active Application Filing
-
2009
- 2009-12-11 US US12/636,646 patent/US7995382B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005106955A1 (ja) * | 2004-04-27 | 2005-11-10 | Matsushita Electric Industrial Co., Ltd. | 記憶素子 |
JP2007073779A (ja) * | 2005-09-07 | 2007-03-22 | Elpida Memory Inc | 不揮発性メモリ素子及びその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013079232A (ja) * | 2011-09-30 | 2013-05-02 | Rohm & Haas Electronic Materials Llc | 光酸発生剤およびこれを含むフォトレジスト |
JP2017122100A (ja) * | 2011-09-30 | 2017-07-13 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 光酸発生剤およびこれを含むフォトレジスト |
Also Published As
Publication number | Publication date |
---|---|
US20100142262A1 (en) | 2010-06-10 |
US7995382B2 (en) | 2011-08-09 |
JP2008310859A (ja) | 2008-12-25 |
JP4792010B2 (ja) | 2011-10-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2008153100A1 (ja) | 情報記録再生装置 | |
WO2008129683A1 (ja) | 情報記録再生装置 | |
WO2008153005A1 (ja) | 情報記録再生装置 | |
SG155874A1 (en) | System, method and apparatus for flexure-integrated microactuator | |
WO2008153006A1 (ja) | 情報記録再生装置 | |
TW200620278A (en) | Memory | |
MY151473A (en) | Information storage medium having multiple storage layers with optimal power control (opc) areas and buffer areas | |
WO2008100869A3 (en) | Non-volatile magnetic memory with low switching current and high thermal stablity | |
WO2009081355A3 (en) | Optical disk format for direct writing materials on a substrate | |
WO2008140817A3 (en) | Data type encoding for media independent handover | |
WO2009075316A1 (ja) | 記憶装置および情報再記録方法 | |
WO2008088994A3 (en) | Method and system for improving domain stability in a ferroelectric media | |
WO2006011085A3 (en) | Layer jump on a multi-layer disc | |
WO2009040939A1 (ja) | 磁気抵抗効果を用いた負性抵抗素子 | |
WO2008120433A1 (ja) | 逆量子化回路、逆量子化方法及び画像再生装置 | |
WO2009075318A1 (ja) | 記憶装置および情報再記録方法 | |
BRPI0413578A (pt) | estrutura de dados de informação de controle, método e aparelho de gravação | |
WO2008153099A1 (ja) | 情報記録再生装置 | |
BR112012031701A8 (pt) | Método para produzir um corpo de portador de dados e corpo portador de dados | |
WO2008129684A1 (ja) | 情報記録再生装置 | |
TW200746128A (en) | Phase change recording medium | |
WO2006076301A3 (en) | Microfluidic devices fabricated by direct thick film writing and methods thereof | |
WO2008136242A1 (ja) | 光ピックアップ装置及び対物光学素子 | |
WO2008123292A1 (ja) | 電動パワーステアリング装置のデータ書込装置、データ書込方法及び電動パワーステアリング装置 | |
WO2009122349A3 (en) | Vertical phase change memory cell |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 08765520 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 08765520 Country of ref document: EP Kind code of ref document: A1 |