WO2008129684A1 - 情報記録再生装置 - Google Patents

情報記録再生装置 Download PDF

Info

Publication number
WO2008129684A1
WO2008129684A1 PCT/JP2007/061829 JP2007061829W WO2008129684A1 WO 2008129684 A1 WO2008129684 A1 WO 2008129684A1 JP 2007061829 W JP2007061829 W JP 2007061829W WO 2008129684 A1 WO2008129684 A1 WO 2008129684A1
Authority
WO
WIPO (PCT)
Prior art keywords
recording
layer
reproducing apparatus
recording layer
information recording
Prior art date
Application number
PCT/JP2007/061829
Other languages
English (en)
French (fr)
Inventor
Kohichi Kubo
Takayuki Tsukamoto
Shinya Aoki
Takahiro Hirai
Chikayoshi Kamata
Toshiro Hiraoka
Original Assignee
Kabushiki Kaisha Toshiba
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kabushiki Kaisha Toshiba filed Critical Kabushiki Kaisha Toshiba
Priority to JP2009510718A priority Critical patent/JP4792108B2/ja
Publication of WO2008129684A1 publication Critical patent/WO2008129684A1/ja
Priority to US12/563,703 priority patent/US20100074001A1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G11B9/149—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the memorising material or structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information

Abstract

　高記録密度及び低消費電力の不揮発性の情報記録再生装置を提供する。 　本発明の例に係わる情報記録再生装置は、電極層及び記録層からなる積層構造と、電極層に付加されるバッファ層と、記録層に電圧を印加して記録層に相変化を発生させて情報を記録する手段とを備える。記録層は、少なくとも２種類の陽イオンを有する複合化合物から構成され、陽イオンの少なくとも１種類は、電子が不完全に満たされたｄ軌道を有する遷移元素である。記録層は、CuxAyXz (0.1≦x≦1.1、0.9≦y≦1.1、1.8≦z≦2.2)で表される材料から構成され、かつ、デラフォサイト構造を有する第１化合物を含む。バッファ層は、M3N4, M3N5, MN2,或いはM4O7,MO2,M2O5で表される材料から構成される。
PCT/JP2007/061829 2007-03-30 2007-06-12 情報記録再生装置 WO2008129684A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009510718A JP4792108B2 (ja) 2007-03-30 2007-06-12 情報記録再生装置
US12/563,703 US20100074001A1 (en) 2007-03-30 2009-09-21 Information recording/reproducing device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007095341 2007-03-30
JP2007-095341 2007-03-30

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/563,703 Continuation-In-Part US20100074001A1 (en) 2007-03-30 2009-09-21 Information recording/reproducing device

Publications (1)

Publication Number Publication Date
WO2008129684A1 true WO2008129684A1 (ja) 2008-10-30

Family

ID=39875229

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/061829 WO2008129684A1 (ja) 2007-03-30 2007-06-12 情報記録再生装置

Country Status (4)

Country Link
US (1) US20100074001A1 (ja)
JP (1) JP4792108B2 (ja)
TW (1) TW200839956A (ja)
WO (1) WO2008129684A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010521069A (ja) * 2007-03-14 2010-06-17 ユニヴェルシテ・ドゥ・ナント Ａｍ４ｘ８型遷移元素の四面体アグリゲートを有する空隙尖晶石を電子データ再書き込み可能不揮発性メモリに使用すること及び対応する物質
JP2010171332A (ja) * 2009-01-26 2010-08-05 Toshiba Corp 不揮発性半導体記憶装置、及びその製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008129683A1 (ja) * 2007-03-30 2008-10-30 Kabushiki Kaisha Toshiba 情報記録再生装置
WO2010029607A1 (ja) 2008-09-09 2010-03-18 株式会社 東芝 情報記録再生装置
US10756263B2 (en) * 2018-05-23 2020-08-25 Purdue Research Foundation Phase transition based resistive random-access memory

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002362923A (ja) * 2001-06-05 2002-12-18 Nippon Shokubai Co Ltd 金属酸化物系粒子の製法
JP2005276952A (ja) * 2004-03-23 2005-10-06 Japan Science & Technology Agency 二次元酸化物自然超格子を用いた熱電材料とその熱電特性の調整方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6204139B1 (en) * 1998-08-25 2001-03-20 University Of Houston Method for switching the properties of perovskite materials used in thin film resistors
EP1153434A1 (en) * 1999-02-17 2001-11-14 International Business Machines Corporation Microelectronic device for storing information and method thereof
WO2003079463A2 (en) * 2002-03-15 2003-09-25 Axon Technologies Corporation Programmable structure, an array including the structure, and methods of forming the same
WO2004068604A1 (ja) * 2003-01-30 2004-08-12 Matsushita Electric Industrial Co., Ltd. 熱スイッチ素子およびその製造方法
JP4146325B2 (ja) * 2003-10-08 2008-09-10 株式会社東芝 巨大磁気抵抗効果素子
JP4499740B2 (ja) * 2003-12-26 2010-07-07 パナソニック株式会社 記憶素子、メモリ回路、半導体集積回路
KR101046868B1 (ko) * 2004-04-16 2011-07-06 파나소닉 주식회사 가변저항을 갖는 박막 메모리 장치
JP4529654B2 (ja) * 2004-11-15 2010-08-25 ソニー株式会社 記憶素子及び記憶装置
US7636257B2 (en) * 2005-06-10 2009-12-22 Macronix International Co., Ltd. Methods of operating p-channel non-volatile memory devices
KR100723872B1 (ko) * 2005-06-30 2007-05-31 한국전자통신연구원 급격한 금속-절연체 전이를 이용한 메모리소자 및 그동작방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002362923A (ja) * 2001-06-05 2002-12-18 Nippon Shokubai Co Ltd 金属酸化物系粒子の製法
JP2005276952A (ja) * 2004-03-23 2005-10-06 Japan Science & Technology Agency 二次元酸化物自然超格子を用いた熱電材料とその熱電特性の調整方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SAKAMOTO T. ET AL.: "Kotai Denkaishitsu Memory", OYO BUTSURI, vol. 75, no. 9, pages 1126 - 1130, XP003023919 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010521069A (ja) * 2007-03-14 2010-06-17 ユニヴェルシテ・ドゥ・ナント Ａｍ４ｘ８型遷移元素の四面体アグリゲートを有する空隙尖晶石を電子データ再書き込み可能不揮発性メモリに使用すること及び対応する物質
KR101416725B1 (ko) 2007-03-14 2014-07-09 위니베르시떼 드 낭뜨 전자 데이터를 재기록가능한 비휘발성 메모리의 ａｍ４ｘ８ 타입의 전이 원소의 사면체 집합체를 갖는 라쿠나 스피넬의 용도 및 대응하는 재료
JP2010171332A (ja) * 2009-01-26 2010-08-05 Toshiba Corp 不揮発性半導体記憶装置、及びその製造方法

Also Published As

Publication number Publication date
TWI343095B (ja) 2011-06-01
TW200839956A (en) 2008-10-01
JPWO2008129684A1 (ja) 2010-07-22
JP4792108B2 (ja) 2011-10-12
US20100074001A1 (en) 2010-03-25

Similar Documents

Publication Publication Date Title
WO2008123307A1 (ja) 情報記録再生装置
WO2008153100A1 (ja) 情報記録再生装置
WO2008129684A1 (ja) 情報記録再生装置
US20080080092A1 (en) Data storage device using magnetic domain wall movement and method of operating the data storage device
SG112075A1 (en) Method for magnetic recording on patterned multilevel perpendicular media using thermal assistance and fixed write current
SG124376A1 (en) Perpendicular magnetic recording medium with magnetic torque layer coupled to the perpendicular recording layer
SG112074A1 (en) Magnetic recording system with patterned multilevel perpendicular magnetic recording
WO2008153005A1 (ja) 情報記録再生装置
WO2009051090A1 (ja) 垂直磁気記録媒体
TW200733102A (en) Non-volatile memory element and method of manufacturing the same
WO2005020232A3 (en) Method for recording information on a multi layer record carrier, and record carrier for use by such method
WO2008153006A1 (ja) 情報記録再生装置
AU2003251171A1 (en) Information storage medium and method of recording and/or reproducing with respect to the medium
CN101217181B (zh) 磁畴数据存储装置及其制造方法
TW200618261A (en) Storage element
HK1113432A1 (en) Recording/reproducing method for information recording medium
TW200601322A (en) Information recording medium
SG131876A1 (en) Granular magnetic recording media with improved corrosion resistance by cap layer and pre-overcoat etching
WO2008088994A3 (en) Method and system for improving domain stability in a ferroelectric media
DE602004018885D1 (de) Informationsaufzeichnungsmedium mit seinem Herstellungsverfahren
EP1688940A3 (en) Ferroelectric recording medium and writing method for the same
TW200701212A (en) Optical information recording media, method for manufacturing them, and method for recording/reproducing optical information
KR20080048316A (ko) 자기장 인가부를 이용한 자구벽 이동 장치 및 이를 이용한메모리 장치
WO2009101072A3 (en) Optical storage medium, mastering method and apparatus for reading of respective data
SG10201506990SA (en) Sputtering target material for producing intermediate layer film of perpendicular magnetic recording medium and thin film produced by using the same

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07745116

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2009510718

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07745116

Country of ref document: EP

Kind code of ref document: A1