WO2008143017A1 - レジスト除去方法及びその装置 - Google Patents

レジスト除去方法及びその装置 Download PDF

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Publication number
WO2008143017A1
WO2008143017A1 PCT/JP2008/058577 JP2008058577W WO2008143017A1 WO 2008143017 A1 WO2008143017 A1 WO 2008143017A1 JP 2008058577 W JP2008058577 W JP 2008058577W WO 2008143017 A1 WO2008143017 A1 WO 2008143017A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
ozone
resist
susceptor
chamber
Prior art date
Application number
PCT/JP2008/058577
Other languages
English (en)
French (fr)
Inventor
Toshinori Miura
Original Assignee
Meidensha Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Corporation filed Critical Meidensha Corporation
Priority to KR1020097023735A priority Critical patent/KR101160258B1/ko
Priority to US12/598,501 priority patent/US8187389B2/en
Priority to CN2008800170471A priority patent/CN101715601B/zh
Publication of WO2008143017A1 publication Critical patent/WO2008143017A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

　レジスト除去装置１はポッピング現象の発生を防止させながら基板のレジストを除去すると共にレジストを除去する際のエネルギーコストの低減と装置構成の単純化させる。レジスト除去装置１は基板１６（例えば高ドーズイオン注入レジストを有するもの）を格納するチャンバ２を備え、このチャンバ２には大気圧よりも低圧のもとでオゾンガスと不飽和炭化水素ガスと水蒸気とが供給される。前記オゾンガスとしてはオゾン含有ガスを蒸気圧の差に基づいてオゾンのみを液化分離した後に再び気化して得られる超高濃度オゾンガスが挙げられる。前記処理した基板１６には洗浄するために超純水を供給するとよい。チャンバ２は基板１６を保持するサセプタ１５を備える。サセプタ１５はその温度が１００°C以下となるように加熱される。前記サセプタを加熱する手段としては例えば赤外光を発する光源４が挙げられる。
PCT/JP2008/058577 2007-05-23 2008-05-08 レジスト除去方法及びその装置 WO2008143017A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020097023735A KR101160258B1 (ko) 2007-05-23 2008-05-08 레지스트 제거방법과 그를 위한 장치
US12/598,501 US8187389B2 (en) 2007-05-23 2008-05-08 Method of removing resist and apparatus therefor
CN2008800170471A CN101715601B (zh) 2007-05-23 2008-05-08 去除抗蚀剂的方法和装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-137288 2007-05-23
JP2007137288A JP4952375B2 (ja) 2007-05-23 2007-05-23 レジスト除去方法及びその装置

Publications (1)

Publication Number Publication Date
WO2008143017A1 true WO2008143017A1 (ja) 2008-11-27

Family

ID=40031729

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058577 WO2008143017A1 (ja) 2007-05-23 2008-05-08 レジスト除去方法及びその装置

Country Status (6)

Country Link
US (1) US8187389B2 (ja)
JP (1) JP4952375B2 (ja)
KR (1) KR101160258B1 (ja)
CN (1) CN101715601B (ja)
TW (1) TW200913007A (ja)
WO (1) WO2008143017A1 (ja)

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* Cited by examiner, † Cited by third party
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CN101889330B (zh) * 2007-12-04 2012-11-14 株式会社明电舍 除去抗蚀剂的方法和用于它的装置
JP5581648B2 (ja) * 2009-10-19 2014-09-03 株式会社明電舎 炭素汚染除去処理方法及び炭素汚染除去処理装置
JP5678671B2 (ja) * 2011-01-07 2015-03-04 富士通セミコンダクター株式会社 クリーニング方法およびクリーニング装置
JP2012243852A (ja) * 2011-05-17 2012-12-10 Renesas Electronics Corp 露光装置、露光方法、半導体装置の製造方法、検査装置、検査方法及びクリーニング方法
JP6239583B2 (ja) 2012-03-20 2017-11-29 マッパー・リソグラフィー・アイピー・ビー．ブイ． ラジカルを輸送するための装置および方法
US9522844B2 (en) * 2014-09-03 2016-12-20 Shenzhen China Star Optoelectronics Technology Co., Ltd. Low temperature poly-silicon thin film preparation apparatus and method for preparing the same
JP6052470B1 (ja) 2015-03-12 2016-12-27 株式会社明電舎 樹脂の改質方法
US10053548B2 (en) 2015-05-21 2018-08-21 Meidensha Corporation Method and device for modifying resin
DE102015209529A1 (de) * 2015-05-22 2016-11-24 BSH Hausgeräte GmbH Haushaltsgerät
US9981293B2 (en) 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
JP6985803B2 (ja) * 2017-03-01 2021-12-22 株式会社Ｓｃｒｅｅｎホールディングス 露光装置、基板処理装置、基板の露光方法および基板処理方法
JP7092478B2 (ja) * 2017-09-15 2022-06-28 株式会社Ｓｃｒｅｅｎホールディングス レジスト除去方法およびレジスト除去装置
KR102099433B1 (ko) 2018-08-29 2020-04-10 세메스 주식회사 기판 처리 방법 및 기판 처리 장치
KR102037902B1 (ko) * 2018-11-26 2019-10-29 세메스 주식회사 기판 처리 장치 및 방법
CN111333034A (zh) * 2020-03-06 2020-06-26 费勉仪器科技（上海）有限公司 一种液化型超高纯臭氧制备装置

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Also Published As

Publication number Publication date
TWI369720B (ja) 2012-08-01
CN101715601A (zh) 2010-05-26
CN101715601B (zh) 2013-06-12
TW200913007A (en) 2009-03-16
US8187389B2 (en) 2012-05-29
JP4952375B2 (ja) 2012-06-13
JP2008294168A (ja) 2008-12-04
US20100139708A1 (en) 2010-06-10
KR20100002280A (ko) 2010-01-06
KR101160258B1 (ko) 2012-06-26

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