WO2008146584A1 - 高濃度オゾン水製造方法とその装置及び基板表面処理方法とその装置 - Google Patents

高濃度オゾン水製造方法とその装置及び基板表面処理方法とその装置 Download PDF

Info

Publication number
WO2008146584A1
WO2008146584A1 PCT/JP2008/058578 JP2008058578W WO2008146584A1 WO 2008146584 A1 WO2008146584 A1 WO 2008146584A1 JP 2008058578 W JP2008058578 W JP 2008058578W WO 2008146584 A1 WO2008146584 A1 WO 2008146584A1
Authority
WO
WIPO (PCT)
Prior art keywords
ozone
ozone water
substrate
apparatus therefor
chamber
Prior art date
Application number
PCT/JP2008/058578
Other languages
English (en)
French (fr)
Inventor
Toshinori Miura
Original Assignee
Meidensha Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Corporation filed Critical Meidensha Corporation
Publication of WO2008146584A1 publication Critical patent/WO2008146584A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/72—Treatment of water, waste water, or sewage by oxidation
    • C02F1/78—Treatment of water, waste water, or sewage by oxidation with ozone
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B13/00—Oxygen; Ozone; Oxides or hydroxides in general
    • C01B13/10—Preparation of ozone
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/68—Treatment of water, waste water, or sewage by addition of specified substances, e.g. trace elements, for ameliorating potable water
    • C02F1/685—Devices for dosing the additives
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2209/00—Controlling or monitoring parameters in water treatment
    • C02F2209/02—Temperature
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2301/00—General aspects of water treatment
    • C02F2301/06—Pressure conditions
    • C02F2301/063—Underpressure, vacuum
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Hydrology & Water Resources (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Water Supply & Treatment (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

　効率的に高濃度オゾン水を製造する。ポッピング現象を起こすことなく基板上の有機物を除去する。オゾン水製造装置１のチャンバ２にはオゾンガスと水蒸気とが供給される。オゾンガスはオゾン含有ガスを蒸気圧の差に基づいてオゾンのみを液化分離した後に再び気化して超高濃度オゾンガスを発生するオゾン発生装置９から供給される。チャンバ２は水蒸気が液化しない程度にヒータ４によって加熱される。真空ポンプ３によってチャンバ２の内圧が大気圧よりも低圧に制御された状態でオゾンガスと水蒸気とが混合される。オゾンを含んだ水蒸気が冷却機構５によって冷却されるとチャンバ２の底面部が結露して高濃度オゾン水が得られる。そして、この高濃度オゾン水に基板が浸漬されると、ポッピング現象を起こすことなく前記基板上の有機物（例えばレジスト）が除去される。前記高濃度オゾン水で処理した基板には洗浄のために超純水が供給するとよい。
PCT/JP2008/058578 2007-05-23 2008-05-08 高濃度オゾン水製造方法とその装置及び基板表面処理方法とその装置 WO2008146584A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-137289 2007-05-23
JP2007137289A JP2008294169A (ja) 2007-05-23 2007-05-23 高濃度オゾン水製造方法とその装置及び基板表面処理方法とその装置

Publications (1)

Publication Number Publication Date
WO2008146584A1 true WO2008146584A1 (ja) 2008-12-04

Family

ID=40168594

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058578 WO2008146584A1 (ja) 2007-05-23 2008-05-08 高濃度オゾン水製造方法とその装置及び基板表面処理方法とその装置

Country Status (3)

Country Link
JP (1) JP2008294169A (ja)
TW (1) TW200908133A (ja)
WO (1) WO2008146584A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105336645B (zh) * 2014-08-14 2021-04-30 无锡华瑛微电子技术有限公司 利用含臭氧的流体处理半导体晶片表面的装置及方法
JP7092478B2 (ja) 2017-09-15 2022-06-28 株式会社Ｓｃｒｅｅｎホールディングス レジスト除去方法およびレジスト除去装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003188137A (ja) * 2001-12-14 2003-07-04 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2003224102A (ja) * 2002-01-30 2003-08-08 Tokyo Electron Ltd 基板処理装置及び基板処理方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003188137A (ja) * 2001-12-14 2003-07-04 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2003224102A (ja) * 2002-01-30 2003-08-08 Tokyo Electron Ltd 基板処理装置及び基板処理方法

Also Published As

Publication number Publication date
JP2008294169A (ja) 2008-12-04
TW200908133A (en) 2009-02-16

Similar Documents

Publication Publication Date Title
WO2009072402A1 (ja) レジスト除去方法及びその装置
US9583330B2 (en) Supercritical drying method for semiconductor substrate and supercritical drying apparatus
US8187389B2 (en) Method of removing resist and apparatus therefor
WO2008146834A1 (ja) レジスト除去方法、半導体製造方法、及びレジスト除去装置
JP4968028B2 (ja) レジスト除去装置
WO2008146584A1 (ja) 高濃度オゾン水製造方法とその装置及び基板表面処理方法とその装置
WO2002100504A3 (en) Distiller for liquids, liquids distillation method and equipment for treating sewage, which equipment includes said distiller
JP2009056380A5 (ja)
JP2007260551A (ja) 有機性廃棄物処理装置及び方法
JP2008075891A (ja) 過熱蒸気生成噴射装置及び過熱蒸気を熱源とする熱処理装置
JP2013521211A (ja) 三塩化窒素を含有する液体塩素の処理方法
US9273570B2 (en) Methods for power generation from H2O, CO2, O2 and a carbon feed stock
US20190092669A1 (en) Method for the continous thermal hydrolysis of organic material and a plant suitable for implementing such method
WO2018155421A1 (ja) 樹脂膜の形成方法および樹脂膜の成膜装置
KR20090101347A (ko) 혼합 증기를 생성하기 위한 방법
JP2008124356A (ja) 表面処理方法及び装置
CN203890080U (zh) 废水中挥发物分离装置
JP4021167B2 (ja) 廃水中の揮発性有機化合物を分離処理する装置
JP3992130B2 (ja) 廃水中の揮発性有機化合物を分離・分解処理する方法及びその装置
JP3230547B2 (ja) 海水淡水化設備
JP4351594B2 (ja) 廃水中の揮発性有機化合物を分離する方法及びその装置
JP2007285196A (ja) ガス燃料機関装置
RU2020109752A (ru) Эффективный способ обезвреживания содержащих цианиды газообразных отходов и сточных вод в способе получения цианидов щелочных металлов
TWI317609B (en) Device and related method for printed circuit board de-smear process using h2o plasma
TW201315687A (zh) 海水淡化裝置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08752464

Country of ref document: EP

Kind code of ref document: A1

DPE1 Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101)
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08752464

Country of ref document: EP

Kind code of ref document: A1