WO2008120401A1 - 耐摩耗性チェーン - Google Patents
耐摩耗性チェーン Download PDFInfo
- Publication number
- WO2008120401A1 WO2008120401A1 PCT/JP2007/057607 JP2007057607W WO2008120401A1 WO 2008120401 A1 WO2008120401 A1 WO 2008120401A1 JP 2007057607 W JP2007057607 W JP 2007057607W WO 2008120401 A1 WO2008120401 A1 WO 2008120401A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- chain
- vanadium
- pin
- vanadium carbide
- wear
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
- C23C10/28—Solid state diffusion of only metal elements or silicon into metallic material surfaces using solids, e.g. powders, pastes
- C23C10/34—Embedding in a powder mixture, i.e. pack cementation
- C23C10/52—Embedding in a powder mixture, i.e. pack cementation more than one element being diffused in one step
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
- C23C10/06—Solid state diffusion of only metal elements or silicon into metallic material surfaces using gases
- C23C10/14—Solid state diffusion of only metal elements or silicon into metallic material surfaces using gases more than one element being diffused in one step
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
- C23C10/06—Solid state diffusion of only metal elements or silicon into metallic material surfaces using gases
- C23C10/16—Solid state diffusion of only metal elements or silicon into metallic material surfaces using gases more than one element being diffused in more than one step
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
- C23C10/28—Solid state diffusion of only metal elements or silicon into metallic material surfaces using solids, e.g. powders, pastes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C12/00—Solid state diffusion of at least one non-metal element other than silicon and at least one metal element or silicon into metallic material surfaces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C12/00—Solid state diffusion of at least one non-metal element other than silicon and at least one metal element or silicon into metallic material surfaces
- C23C12/02—Diffusion in one step
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16G—BELTS, CABLES, OR ROPES, PREDOMINANTLY USED FOR DRIVING PURPOSES; CHAINS; FITTINGS PREDOMINANTLY USED THEREFOR
- F16G13/00—Chains
- F16G13/02—Driving-chains
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Definitions
- the present invention relates to a transmission chain such as a silent chain or a roller chain, and more specifically, a hardened surface layer having vanadium carbide is formed on a bearing portion that rotates relative to each other such as a pin and a link plate or a pin and a bush in the chain. It relates to wear-resistant chains. Background art
- a powder pack method using a rotary retort is generally used.
- Powder pack method the pin base material made of steel, Fuerobanajiu beam (F e V) vanadium powder such as alumina (A l 2 ⁇ 3) anti-sintering materials such as chloride and Anmoniumu (NH 4 C 1)
- F e V Fuerobanajiu beam
- vanadium powder such as alumina (A l 2 ⁇ 3) anti-sintering materials such as chloride and Anmoniumu (NH 4 C 1)
- the vanadium carbide layer thus obtained has a thickness of 6 to 15 m, and the vanadium carbide particle size is about 1 to 3 ⁇ m.
- the processing temperature for example, 150 ° C. or more.
- the crystal grain size of the vanadium carbide layer (Vx Cy, for example, V 8 C 7 ) is coarsened, and the coarsening of the grain size facilitates the separation of the vanadium carbide layer from the base material (pin material). Decrease in adhesion (bonding) with the base material.
- the vanadium carbide layer formed on the bearing portion of a chain such as a pin has a film thickness greater than a predetermined thickness in order to ensure sufficient durability under severe use conditions such as an engine timing chain. Although necessary, in order to obtain the desired film thickness, it is efficient to perform the treatment at a high temperature for a short time.
- an object of the present invention is to provide a wear-resistant chain that has sufficient durability even under severe use conditions while being efficient and excellent in productivity.
- the vanadium carbide particle size is refined and a desired film thickness is obtained, so that, in view of technical common sense, a counter-balanced phenomenon is achieved simultaneously.
- vanadium-containing powders, sintering inhibitors, and accelerators we researched the third additive element, focusing on the key element (S i) as an additive element and conducting extensive research on its additive form. As a result.
- an economical and efficient vanadium diffusion permeation treatment can be performed by a high temperature treatment of, for example, about 150 ° C., and a desired film thickness can be obtained with a finer VC particle size. Is possible.
- the present invention relates to a base material in which at least one of a pin and a link plate (for example, a silent chain) or a pin and a bush (for example, a roller chain) that rotate relative to each other to constitute a bearing portion is made of steel.
- a wear-resistant chain in which a hardened layer having vanadium carbide (for example, V 8 C 7 ) is formed on the surface of
- the hardened layer has a second phase having an amorphous structure containing silicon (S i) in crystal grains of the vanadium carbide, and a typical crystal grain size of the vanadium carbide is 1 [m]. In the following, it is desirable that it is preferably 500 nm or less.
- the hardened layer having vanadium carbide disperses the second phase composed of an amorphous structure in the crystal grains of the vanadium carbide, and the crystal of the vanadium carbide is fined to 1 [zm] or less.
- Can be This makes it possible to have high durability even under severe use conditions, such as an engine timing chain.
- the vanadium carbide contains, in addition to vanadium and carbon, 0.05 to 0.5 [wt%] silicon, preferably 0.15 to 0.3 [wt%] silicon. Become.
- the vanadium carbide can greatly reduce the grain size of the crystal only by containing a small amount of silicon of 0.05 to 0.5 [wt%] in the crystal grain.
- the chain component is formed by subjecting a base material made of steel to diffusion penetration treatment at a predetermined temperature in a gas atmosphere having vanadium,
- a silicon-containing micronizing agent is added during the diffusion permeation treatment.
- the vanadium diffusion and permeation treatment can be performed simply by adding a silicon-containing refining agent.
- Vanadium consisting of refined crystal grains with a predetermined film thickness can be obtained by an efficient treatment with high productivity at high temperatures.
- a carbide monolayer can be obtained.
- FIG. 1 is a structural diagram (photograph) of a hardened layer portion obtained by a scanning electron microscope
- A is a structural diagram of a conventional vanadium carbide layer
- B is a vanadium carbide layer according to the present invention
- Fig. 2 is a microstructural diagram (photograph) of a vanadium carbide layer obtained by a transmission electron microscope.
- Fig. 3 is an expanded organization chart in which the above Mikuguchi organization chart is further enlarged.
- Figure 4 shows the components analyzed by the X-ray analyzer.
- (A) Indicates the component of the second phase in the VC grain, and
- (B) indicates the component of the base part of the VC grain.
- Figure 5 shows a microelectron diffraction image (photo).
- A shows the diffraction image targeting the second phase in the VC grain
- B shows the diffraction image targeting the VC grain base. Show.
- FIG. 6 is a diagram showing test results obtained by analyzing the pin surface according to the present invention using an X-ray diffractometer.
- FIG. 7 is a graph showing the rate of elongation over time when a silent chain using a pin according to the present invention and a silent chain using a conventional vanadizing pin are operated in pseudo-degraded oil.
- the chain according to the present invention is applied to any power transmission chain such as a known roller chain or silent chain, and is particularly suitable for application to a chain used in an engine such as a timing chain.
- a roller chain consists of a pin link in which both ends of two pin link plates are connected by pins, and a roller link in which both ends of two mouth link plates are connected by bushes. It is inserted and inserted into the endless connection, and the roller is loosely fitted to the bush.
- the silent chain includes a guide row composed of a plurality of link plates having guide drink plates at both ends, and a joint row composed of only a toothed link plate without the guide link plate. It is configured to be connected endlessly with a pin fixed to the G. Each time the chain is bent, the roller chain causes a sliding movement between the pin and the bush, and the silent chain.
- the present invention is directed to the chain component constituting the bearing portion. Specifically, in the roller chain, at least one of a pin and a bush, and in the silent chain, the pin is used. At least one of the joint row link plate and the joint row link plate is the target, but in the present embodiment, the pin is the target.
- Pins as the base metal are high carbon steel or carburized steel, for example, S 50 C (C; 0.47 to 0.5 3%, S i; 0.15 to 0.35, Mn; 0.6 to 0.90%, P; 0.30% or less, S; 0.35% or less, Cr as impurities; 0.20% or less)
- the pin base material (material) made of the above steel and having iron (F e) as a base material is subjected to vanadium diffusion permeation treatment (VC diffusion permeation treatment).
- the VC cementation process (Banadaijingu), together with the pin base material, the F e V as penetration raw material (Fueroba Najiumu), and A 1 2 0 3 as a sintering prevention material (alumina), NH as promoting material 4 C 1 put powder consisting (chloride Anmoniumu) and into the furnace, adding a small amount of further crystalline silicon containing further shrinking agent according to the present invention (e.g., S I_ ⁇ 2 powder). Then, the inside of the furnace is heated to 900 ° C. (: ⁇ 1 100 ° C. and held for a predetermined time.
- the VC diffusion treatment is performed in the furnace by NH 4 C 1 ⁇ NH 3 + HC 1 (gas ) HC 1 (gas) + V (metal powder) ⁇ VC 1 (gas) + H 2 ⁇
- C in the pin base material combines with V in the atmosphere, Vx C y, for example, a V 8 C 7, the surface of the pin base material, the vanadium carbide (V) to form a coating layer to penetrate.
- Vx C y for example, a V 8 C 7
- the vanadium diffusion and infiltration treatment is carried out in a relatively short time at a predetermined high temperature, for example, 150 ° C., and efficient and practical productivity can be obtained.
- the pins are formed on the surface of the base material made of steel.
- a hardened layer made of vanadium carbide (V 8 C 7 ) is formed to a thickness of about 10 to 25 [/ im], and the grain size of a typical VC crystal is 1 [/ xm] or less, Desirably, it consists of fine particles of 5 0 0 [nm] or less.
- FIG. 1 is a diagram showing a hardened layer portion of the pin by a scanning electron microscope (SEM), where (A) shows a conventional hardened layer and (B) shows a hardened layer according to the present invention.
- la, 113 are (: layers, 2 a, 2 b are base materials, but the VC layer 1 b according to the present invention is thicker and has a smaller VC grain size than the conventional VC layer 1 a. It can be seen that it consists of a single layer.
- Fig. 2 shows the microstructure of a VC crystal according to the present invention (photographed at 300 to 100 magnifications) using a transmission electron microscope (TEM).
- TEM transmission electron microscope
- the VC particle size was 150 to 400 [nm]
- the second phase of several tens [nm] in the VC crystal (visible as small white dots) was found to exist.
- Fig. 3 shows a further enlargement of the above microstructure (6 00 0 00 0x magnification), where the B part is the base part of the VC crystal and the A part is the second phase part in the VC grain
- Fig. 4 shows the results of component analysis of the base part B and the second phase part A using an X-ray analyzer.
- FIG. 4 (A) shows the component of the second phase (A part) in the VC grain, and it is confirmed that Si exists in addition to V and C.
- Fig. 4 (B) shows the base of the VC crystal. (B part) is a component and S i does not exist. Cu is attributed to the analysis sample fixing jig, and other elements are impurities.
- the second phase Si is about 0.2 [weight%], and is clearly not an impurity.
- Fig. 5 shows an image diffracted by microelectron diffraction.
- Fig. 5 (A) is a micro-electron diffraction image of the second phase (part A) in the VC particle. It shows an eight-row pattern, and the second phase is assumed to be an amorphous phase. Is done.
- Fig. 5 (B) shows a microelectron diffraction image of the VC crystal base part (B part).
- Figure 6 shows the test results of the pin surface according to the present invention using the above-mentioned second-phase X-ray diffractometer (XRD). Only the crystal phase VC phase (V S C 7 ) is identified, and S i Is not analyzed. This is probably because the second phase has an amorphous structure that does not exhibit diffraction.
- XRD second-phase X-ray diffractometer
- the surface hardened layer of the pin according to the present invention is composed of a single layer of vanadium carbide (V 8 C 7 ), and the VC crystal is greatly refined as compared with the conventional one (VC grain size 5 0 0 nm or less).
- Fine second phase is dispersed in the crystal grains of vanadium carbide (VC), and the second phase has an amorphous structure containing silicon (S i).
- the Si-containing micronizing agent chemically reacts to function as a nucleus when forming a VC film.
- Significant miniaturization of VC crystal grains is achieved.
- the VC grain refinement mechanism according to the present invention is considered to be due to the above-described increase in nuclear density.
- the typical crystal grain size of the vanadium carbide (VC) described above is about 500 [nm] or less, but it can be distinguished from the conventional one, and the range in which the effect by miniaturization described below can be achieved is representative.
- a typical crystal grain size may be 1 [xm] or less.
- the content of Si is 0.2 [wt%], and 0.15 to 0.3 [wt%] in consideration of errors and the like.
- FIG. 7 is a diagram showing a change in elongation rate with respect to time when a silent chain using a pin according to the present invention and a silent chain using a conventional panadizing pin are operated in pseudo-degraded oil.
- Pseudo-degraded oil is a human oil that simulates market-degraded oil containing foreign substances for the purpose of improving the reproducibility of tests, and is prepared by blending special carbon black. Is done.
- the silent chain (developed VC) according to the present invention can improve the durability by about 35% compared to the conventional one (conventional VC).
- the embodiment described above is applied to the pin of the silent chain.
- the present invention is not limited to this, and one or both of the bearing portions, specifically, one of the link plate of the pin and the joint row in the silent chain.
- the present invention is suitable for use in a silent chain or a roller chain, particularly an evening chain in an engine.
- Applicable to chain components that make up a relatively rotating bearing part Specifically, it can be used for pins and link plates for silent chains, and for pins and bushes for mouth-chains. .
Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2007/057607 WO2008120401A1 (ja) | 2007-03-29 | 2007-03-29 | 耐摩耗性チェーン |
GB0916110A GB2459630B (en) | 2007-03-29 | 2007-03-29 | Wear-resistant chain |
JP2009507387A JP5110610B2 (ja) | 2007-03-29 | 2007-03-29 | 耐摩耗性チェーン |
DE200711003413 DE112007003413B4 (de) | 2007-03-29 | 2007-03-29 | Verschleissfeste Kette |
CN2007800523623A CN101663503B (zh) | 2007-03-29 | 2007-03-29 | 耐磨性链条 |
US12/532,795 US8932164B2 (en) | 2007-03-29 | 2007-03-29 | Wear-resistant chain |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2007/057607 WO2008120401A1 (ja) | 2007-03-29 | 2007-03-29 | 耐摩耗性チェーン |
Publications (1)
Publication Number | Publication Date |
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WO2008120401A1 true WO2008120401A1 (ja) | 2008-10-09 |
Family
ID=39807992
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2007/057607 WO2008120401A1 (ja) | 2007-03-29 | 2007-03-29 | 耐摩耗性チェーン |
Country Status (6)
Country | Link |
---|---|
US (1) | US8932164B2 (ja) |
JP (1) | JP5110610B2 (ja) |
CN (1) | CN101663503B (ja) |
DE (1) | DE112007003413B4 (ja) |
GB (1) | GB2459630B (ja) |
WO (1) | WO2008120401A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101892369B (zh) * | 2010-05-11 | 2012-07-25 | 青岛征和工业有限公司 | 发动机链条强化处理方法 |
JP6118144B2 (ja) * | 2013-03-14 | 2017-04-19 | ボーグワーナー インコーポレーテッド | 耐摩耗性を有するチェーン用ピンの製造方法 |
JP5608280B1 (ja) * | 2013-10-21 | 2014-10-15 | 大同工業株式会社 | チェーン用軸受部、その製造方法、及びそれを用いたチェーン |
DE102016009814A1 (de) * | 2015-09-09 | 2017-03-09 | Sram Deutschland Gmbh | Rollenketten-Innenlasche |
DE102018103319A1 (de) * | 2018-02-14 | 2019-08-14 | Iwis Motorsysteme Gmbh & Co. Kg | Metallbauteil |
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JP2004360755A (ja) * | 2003-06-03 | 2004-12-24 | Daido Kogyo Co Ltd | チェーン用ピン及びその製造方法 |
JP2005290435A (ja) * | 2004-03-31 | 2005-10-20 | Borg Warner Morse Tec Japan Kk | チェーン用ピンおよびその製造方法 |
JP2005299800A (ja) * | 2004-04-12 | 2005-10-27 | Tsubakimoto Chain Co | サイレントチェーン |
JP2006336056A (ja) * | 2005-05-31 | 2006-12-14 | Nippon Karoraizu Kogyo Kk | 耐摩耗性鋼製部品およびその製造方法 |
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US4451508A (en) * | 1982-06-28 | 1984-05-29 | Union Carbide Corporation | Hard facing of metal substrates using material containing VC and improved flux compositions therefor |
JPS6237679A (ja) | 1985-08-08 | 1987-02-18 | 松下電器産業株式会社 | 雰囲気電気炉 |
US4714632A (en) * | 1985-12-11 | 1987-12-22 | Air Products And Chemicals, Inc. | Method of producing silicon diffusion coatings on metal articles |
US5560839A (en) * | 1994-06-27 | 1996-10-01 | Valenite Inc. | Methods of preparing cemented metal carbide substrates for deposition of adherent diamond coatings and products made therefrom |
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JP3199225B2 (ja) * | 1996-12-12 | 2001-08-13 | 株式会社椿本チエイン | サイレントチェーン |
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JP3656844B2 (ja) * | 2002-07-23 | 2005-06-08 | 株式会社椿本チエイン | 自動車エンジン用タイミングチェーン |
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WO2007111301A1 (ja) * | 2006-03-28 | 2007-10-04 | Kyocera Corporation | 表面被覆工具 |
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2007
- 2007-03-29 JP JP2009507387A patent/JP5110610B2/ja active Active
- 2007-03-29 US US12/532,795 patent/US8932164B2/en active Active
- 2007-03-29 DE DE200711003413 patent/DE112007003413B4/de active Active
- 2007-03-29 WO PCT/JP2007/057607 patent/WO2008120401A1/ja active Application Filing
- 2007-03-29 CN CN2007800523623A patent/CN101663503B/zh active Active
- 2007-03-29 GB GB0916110A patent/GB2459630B/en active Active
Patent Citations (4)
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JP2004360755A (ja) * | 2003-06-03 | 2004-12-24 | Daido Kogyo Co Ltd | チェーン用ピン及びその製造方法 |
JP2005290435A (ja) * | 2004-03-31 | 2005-10-20 | Borg Warner Morse Tec Japan Kk | チェーン用ピンおよびその製造方法 |
JP2005299800A (ja) * | 2004-04-12 | 2005-10-27 | Tsubakimoto Chain Co | サイレントチェーン |
JP2006336056A (ja) * | 2005-05-31 | 2006-12-14 | Nippon Karoraizu Kogyo Kk | 耐摩耗性鋼製部品およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
DE112007003413T5 (de) | 2010-04-22 |
US8932164B2 (en) | 2015-01-13 |
US20100120567A1 (en) | 2010-05-13 |
DE112007003413B4 (de) | 2014-08-14 |
GB2459630A (en) | 2009-11-04 |
JPWO2008120401A1 (ja) | 2010-07-15 |
CN101663503A (zh) | 2010-03-03 |
CN101663503B (zh) | 2011-04-13 |
GB2459630B (en) | 2011-09-28 |
JP5110610B2 (ja) | 2012-12-26 |
GB0916110D0 (en) | 2009-10-28 |
GB2459630A9 (en) | 2010-02-24 |
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