WO2008111409A1 - 半導体チップ及び半導体装置 - Google Patents
半導体チップ及び半導体装置 Download PDFInfo
- Publication number
- WO2008111409A1 WO2008111409A1 PCT/JP2008/053612 JP2008053612W WO2008111409A1 WO 2008111409 A1 WO2008111409 A1 WO 2008111409A1 JP 2008053612 W JP2008053612 W JP 2008053612W WO 2008111409 A1 WO2008111409 A1 WO 2008111409A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- capacitative coupling
- silicon substrate
- signal transmission
- transmission circuit
- semiconductor chip
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 230000008878 coupling Effects 0.000 abstract 4
- 238000010168 coupling process Methods 0.000 abstract 4
- 238000005859 coupling reaction Methods 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 230000008054 signal transmission Effects 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 230000015654 memory Effects 0.000 abstract 2
- 238000004806 packaging method and process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06527—Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/529,443 US7990747B2 (en) | 2007-03-09 | 2008-02-29 | Semiconductor chip and semiconductor device |
JP2009503966A JP5471439B2 (ja) | 2007-03-09 | 2008-02-29 | 半導体チップ及び半導体装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007060352 | 2007-03-09 | ||
JP2007-060352 | 2007-03-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008111409A1 true WO2008111409A1 (ja) | 2008-09-18 |
Family
ID=39759352
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/053612 WO2008111409A1 (ja) | 2007-03-09 | 2008-02-29 | 半導体チップ及び半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7990747B2 (ja) |
JP (1) | JP5471439B2 (ja) |
WO (1) | WO2008111409A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010186764A (ja) * | 2009-02-10 | 2010-08-26 | Hitachi Ltd | 半導体集積回路装置 |
WO2010110244A1 (ja) * | 2009-03-25 | 2010-09-30 | 株式会社 東芝 | 三次元半導体集積回路 |
WO2010119625A1 (ja) * | 2009-04-13 | 2010-10-21 | 日本電気株式会社 | 半導体装置及びそのテスト方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10826536B1 (en) * | 2019-10-03 | 2020-11-03 | International Business Machines Corporation | Inter-chip data transmission system using single-ended transceivers |
JP7282329B2 (ja) * | 2019-10-04 | 2023-05-29 | 本田技研工業株式会社 | 半導体装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05190770A (ja) * | 1992-01-09 | 1993-07-30 | Fujitsu Ltd | 半導体装置 |
JP2006019328A (ja) * | 2004-06-30 | 2006-01-19 | Nec Corp | 積層型半導体装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS562662A (en) | 1979-06-22 | 1981-01-12 | Hitachi Ltd | Laminated electric circuit |
JPS60246654A (ja) | 1984-05-22 | 1985-12-06 | Agency Of Ind Science & Technol | 三次元集積回路 |
JPS6220362A (ja) * | 1985-07-19 | 1987-01-28 | Hitachi Ltd | 積層電気回路用信号伝送回路 |
US6728113B1 (en) | 1993-06-24 | 2004-04-27 | Polychip, Inc. | Method and apparatus for non-conductively interconnecting integrated circuits |
US5818112A (en) | 1994-11-15 | 1998-10-06 | Siemens Aktiengesellschaft | Arrangement for capacitive signal transmission between the chip layers of a vertically integrated circuit |
TW419810B (en) | 1998-06-18 | 2001-01-21 | Hitachi Ltd | Semiconductor device |
JP5136056B2 (ja) * | 2005-09-06 | 2013-02-06 | 日本電気株式会社 | 半導体装置 |
US7473999B2 (en) * | 2005-09-23 | 2009-01-06 | Megica Corporation | Semiconductor chip and process for forming the same |
JP5078338B2 (ja) * | 2006-12-12 | 2012-11-21 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
-
2008
- 2008-02-29 JP JP2009503966A patent/JP5471439B2/ja active Active
- 2008-02-29 WO PCT/JP2008/053612 patent/WO2008111409A1/ja active Application Filing
- 2008-02-29 US US12/529,443 patent/US7990747B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05190770A (ja) * | 1992-01-09 | 1993-07-30 | Fujitsu Ltd | 半導体装置 |
JP2006019328A (ja) * | 2004-06-30 | 2006-01-19 | Nec Corp | 積層型半導体装置 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010186764A (ja) * | 2009-02-10 | 2010-08-26 | Hitachi Ltd | 半導体集積回路装置 |
WO2010110244A1 (ja) * | 2009-03-25 | 2010-09-30 | 株式会社 東芝 | 三次元半導体集積回路 |
JP2010226008A (ja) * | 2009-03-25 | 2010-10-07 | Toshiba Corp | 三次元半導体集積回路 |
US8497732B2 (en) | 2009-03-25 | 2013-07-30 | Kabushiki Kaisha Toshiba | Three-dimensional semiconductor integrated circuit |
WO2010119625A1 (ja) * | 2009-04-13 | 2010-10-21 | 日本電気株式会社 | 半導体装置及びそのテスト方法 |
Also Published As
Publication number | Publication date |
---|---|
US7990747B2 (en) | 2011-08-02 |
JP5471439B2 (ja) | 2014-04-16 |
JPWO2008111409A1 (ja) | 2010-06-24 |
US20100097159A1 (en) | 2010-04-22 |
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