WO2008081567A1 - シリコンウエーハの評価方法 - Google Patents
シリコンウエーハの評価方法 Download PDFInfo
- Publication number
- WO2008081567A1 WO2008081567A1 PCT/JP2007/001397 JP2007001397W WO2008081567A1 WO 2008081567 A1 WO2008081567 A1 WO 2008081567A1 JP 2007001397 W JP2007001397 W JP 2007001397W WO 2008081567 A1 WO2008081567 A1 WO 2008081567A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- silicon wafer
- electrodes
- insulating film
- evaluation method
- evaluated
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49126—Assembling bases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49133—Assembling to base an electrical component, e.g., capacitor, etc. with component orienting
- Y10T29/49135—Assembling to base an electrical component, e.g., capacitor, etc. with component orienting and shaping, e.g., cutting or bending, etc.
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49144—Assembling to base an electrical component, e.g., capacitor, etc. by metal fusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49227—Insulator making
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2007800492235A CN101606239B (zh) | 2007-01-05 | 2007-12-14 | 硅晶片的评价方法 |
JP2008552018A JPWO2008081567A1 (ja) | 2007-01-05 | 2007-12-14 | シリコンウエーハの評価方法 |
EP07859649A EP2105956A4 (en) | 2007-01-05 | 2007-12-14 | METHOD FOR EVALUATING SILICON WAFERS |
US12/448,408 US8111081B2 (en) | 2007-01-05 | 2007-12-14 | Method for evaluating silicon wafer |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-000629 | 2007-01-05 | ||
JP2007000629 | 2007-01-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008081567A1 true WO2008081567A1 (ja) | 2008-07-10 |
Family
ID=39588257
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/001397 WO2008081567A1 (ja) | 2007-01-05 | 2007-12-14 | シリコンウエーハの評価方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8111081B2 (ja) |
EP (1) | EP2105956A4 (ja) |
JP (1) | JPWO2008081567A1 (ja) |
KR (1) | KR20090096711A (ja) |
CN (1) | CN101606239B (ja) |
TW (1) | TW200845257A (ja) |
WO (1) | WO2008081567A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010056264A (ja) * | 2008-08-28 | 2010-03-11 | Sumco Corp | シリコンウェーハの評価方法および製造方法 |
JP2016103528A (ja) * | 2014-11-27 | 2016-06-02 | 信越半導体株式会社 | シリコン単結晶ウェーハの評価方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101333374B1 (ko) * | 2011-12-09 | 2013-12-02 | 명지대학교 산학협력단 | 실리콘 관통 전극 프로파일 평가 방법 및 장치 |
JP2014192493A (ja) | 2013-03-28 | 2014-10-06 | Toyoda Gosei Co Ltd | 半導体装置 |
CN106933119B (zh) * | 2015-12-30 | 2021-05-11 | 巴彦淖尔聚光硅业有限公司 | 多晶硅还原炉调功柜控制系统 |
JP6536517B2 (ja) * | 2016-09-07 | 2019-07-03 | 信越半導体株式会社 | 結晶欠陥評価方法 |
US9953727B1 (en) * | 2017-02-10 | 2018-04-24 | Globalfoundries Inc. | Circuit and method for detecting time dependent dielectric breakdown (TDDB) shorts and signal-margin testing |
JP6711327B2 (ja) | 2017-07-18 | 2020-06-17 | 株式会社Sumco | シリコンウェーハ製造工程の評価方法およびシリコンウェーハの製造方法 |
CN111029270A (zh) * | 2019-12-19 | 2020-04-17 | 西安奕斯伟硅片技术有限公司 | 晶圆处理方法及装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08330316A (ja) | 1995-05-31 | 1996-12-13 | Sumitomo Sitix Corp | シリコン単結晶ウェーハおよびその製造方法 |
JPH0964345A (ja) * | 1995-08-18 | 1997-03-07 | Fujitsu Ltd | 電界効果半導体装置のゲート絶縁膜耐圧モニタ |
JP2006005088A (ja) * | 2004-06-16 | 2006-01-05 | Siltronic Japan Corp | シリコン半導体基板とその製造方法 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2538699B2 (ja) * | 1990-06-12 | 1996-09-25 | 株式会社東芝 | 絶縁破壊評価用試験素子 |
JP2613498B2 (ja) * | 1991-03-15 | 1997-05-28 | 信越半導体株式会社 | Si単結晶ウエーハの熱処理方法 |
US5798649A (en) * | 1991-12-26 | 1998-08-25 | Texas Instruments Incorporated | Method for detecting defects in semiconductor insulators |
JP3274246B2 (ja) * | 1993-08-23 | 2002-04-15 | コマツ電子金属株式会社 | エピタキシャルウェーハの製造方法 |
US5596207A (en) * | 1994-04-08 | 1997-01-21 | Texas Instruments Incorporated | Apparatus and method for detecting defects in insulative layers of MOS active devices |
JPH0862122A (ja) * | 1994-08-24 | 1996-03-08 | Komatsu Electron Metals Co Ltd | シリコンウェーハの酸素析出欠陥密度評価方法 |
US5786231A (en) * | 1995-12-05 | 1998-07-28 | Sandia Corporation | Screening method for selecting semiconductor substrates having defects below a predetermined level in an oxide layer |
JP3250465B2 (ja) * | 1996-09-06 | 2002-01-28 | ヤマハ株式会社 | 電子シェーディングダメージの測定方法 |
US6014034A (en) * | 1996-10-24 | 2000-01-11 | Texas Instruments Incorporated | Method for testing semiconductor thin gate oxide |
JPH10199946A (ja) * | 1997-01-07 | 1998-07-31 | Mitsubishi Electric Corp | 半導体装置の評価方法 |
US6028324A (en) * | 1997-03-07 | 2000-02-22 | Taiwan Semiconductor Manufacturing Company | Test structures for monitoring gate oxide defect densities and the plasma antenna effect |
WO1999040243A1 (fr) * | 1998-02-04 | 1999-08-12 | Sumitomo Metal Industries, Ltd. | Procede servant a produire un monocristal de silicium et tranche de silicium monocristallin |
US6198301B1 (en) * | 1998-07-23 | 2001-03-06 | Lucent Technologies Inc. | Method for determining the hot carrier lifetime of a transistor |
US6498502B2 (en) * | 2000-01-04 | 2002-12-24 | Texas Instrument Incorporated | Apparatus and method for evaluating semiconductor structures and devices |
US6528335B2 (en) * | 2001-02-14 | 2003-03-04 | International Business Machines Corporation | Electrical method for assessing yield-limiting asperities in silicon-on-insulator wafers |
US6747471B1 (en) * | 2002-01-10 | 2004-06-08 | Taiwan Semiconductor Manufacturing Company | Method and apparatus to estimate burn-in time by measurement of scribe-line devices, with stacking devices, and with common pads |
US6815971B2 (en) * | 2002-11-06 | 2004-11-09 | Taiwan Semiconductor Manufacturing Co., Ltd | Method and apparatus for stress testing integrated circuits using an adjustable AC hot carrier injection source |
CN100365786C (zh) * | 2002-12-31 | 2008-01-30 | 上海贝岭股份有限公司 | 双极集成电路中硅材料质量的检测方法 |
JP2004253720A (ja) * | 2003-02-21 | 2004-09-09 | Sumitomo Mitsubishi Silicon Corp | シリコンウェーハの検査方法および装置 |
US6800496B1 (en) * | 2003-08-20 | 2004-10-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Characterization methodology for the thin gate oxide device |
JP2005116742A (ja) * | 2003-10-07 | 2005-04-28 | Shin Etsu Handotai Co Ltd | 半導体ウェーハの評価方法 |
US6864702B1 (en) * | 2003-12-24 | 2005-03-08 | Texas Instruments Incorporated | System for oxide stress testing |
US7193469B2 (en) * | 2005-05-06 | 2007-03-20 | Texas Instruments Incorporated | System and method for testing gate oxide of an amplifier |
US7550382B2 (en) * | 2005-05-31 | 2009-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device, evaluation method of semiconductor device, and semiconductor device |
WO2007022538A2 (en) * | 2005-08-19 | 2007-02-22 | Kla-Tencor Technologies Corporation | Test pads for measuring properties of a wafer |
JP4743010B2 (ja) * | 2005-08-26 | 2011-08-10 | 株式会社Sumco | シリコンウェーハの表面欠陥評価方法 |
US7462497B2 (en) * | 2005-09-14 | 2008-12-09 | Semiconductor Manufacturing International (Shanghai) Corporation | Method and system for derivation of breakdown voltage for MOS integrated circuit devices |
JP4735337B2 (ja) * | 2006-03-03 | 2011-07-27 | 株式会社Sumco | 半導体素子の評価方法、ならびに半導体ウェーハの品質評価方法および製造方法 |
US7689377B2 (en) * | 2006-11-22 | 2010-03-30 | Texas Instruments Incorporated | Technique for aging induced performance drift compensation in an integrated circuit |
-
2007
- 2007-12-14 EP EP07859649A patent/EP2105956A4/en not_active Withdrawn
- 2007-12-14 JP JP2008552018A patent/JPWO2008081567A1/ja active Pending
- 2007-12-14 CN CN2007800492235A patent/CN101606239B/zh not_active Expired - Fee Related
- 2007-12-14 US US12/448,408 patent/US8111081B2/en not_active Expired - Fee Related
- 2007-12-14 KR KR1020097013880A patent/KR20090096711A/ko not_active Application Discontinuation
- 2007-12-14 WO PCT/JP2007/001397 patent/WO2008081567A1/ja active Application Filing
- 2007-12-19 TW TW096148822A patent/TW200845257A/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08330316A (ja) | 1995-05-31 | 1996-12-13 | Sumitomo Sitix Corp | シリコン単結晶ウェーハおよびその製造方法 |
JPH0964345A (ja) * | 1995-08-18 | 1997-03-07 | Fujitsu Ltd | 電界効果半導体装置のゲート絶縁膜耐圧モニタ |
JP2006005088A (ja) * | 2004-06-16 | 2006-01-05 | Siltronic Japan Corp | シリコン半導体基板とその製造方法 |
Non-Patent Citations (3)
Title |
---|
M. TAMATSUKA ET AL.: "Medium Field Breakdown Origin on Metal Oxide Semiconductor Capacitor Containing Grown-in Czochralski Silicon Crystal Defects", JPN. J. APPL. PHYS., vol. 37, 1998, pages 1236 - 1239 |
See also references of EP2105956A4 * |
TERAMOTO A. ET AL.: "Netsu Sankamaku no TDDB Tokusei ni Okeru Menseki Oyobi Makuatsu Izonsei", IEICE TECHNICAL REPORT, vol. 94, no. 180 (SDM94 34-44), 1994, pages 29 - 34, XP008109695 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010056264A (ja) * | 2008-08-28 | 2010-03-11 | Sumco Corp | シリコンウェーハの評価方法および製造方法 |
JP2016103528A (ja) * | 2014-11-27 | 2016-06-02 | 信越半導体株式会社 | シリコン単結晶ウェーハの評価方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20090096711A (ko) | 2009-09-14 |
CN101606239A (zh) | 2009-12-16 |
CN101606239B (zh) | 2011-05-04 |
EP2105956A1 (en) | 2009-09-30 |
US20100019796A1 (en) | 2010-01-28 |
US8111081B2 (en) | 2012-02-07 |
EP2105956A4 (en) | 2012-03-07 |
TW200845257A (en) | 2008-11-16 |
JPWO2008081567A1 (ja) | 2010-04-30 |
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