Classifications

• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/26—Processing photosensitive materials; Apparatus therefor
  • G03F7/30—Imagewise removal using liquid means
  • G03F7/32—Liquid compositions therefor, e.g. developers
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/26—Processing photosensitive materials; Apparatus therefor
  • G03F7/40—Treatment after imagewise removal, e.g. baking
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

Definitions

• the present invention relates to a resist substrate processing solution. More specifically, the present invention relates to a photosensitive resin composition used in the manufacture of semiconductor devices, flat panel displays (FPD) such as liquid crystal display elements, charge coupled devices (CCD), color filters, and magnetic heads.
• FPD flat panel displays
• CCD charge coupled devices
• the present invention relates to a substrate processing solution for resist that is suitably used in a development process.
• the present invention also relates to a method for processing a developed resist substrate using the resist substrate processing solution.
• a positive or negative photosensitive resin composition is used to form a resist pattern.
• a positive photoresist for example, a photosensitive resin composition comprising an alkali-soluble resin and a quinonediazide compound which is a photosensitive substance is widely used.
• KrF excimer laser (248 nm) is not sufficient with conventional light sources such as visible light or near ultraviolet light (wavelength 400 to 300 nm) as an exposure light source. It is necessary to use far-ultraviolet rays such as Ar F excimer laser (193 nm), and even shorter wavelength radiation such as X-rays and electron beams. Lithography processes using these exposure light sources have been proposed and put to practical use. It is becoming.
• a photosensitive resin composition used as a photoresist at the time of microfabrication is also required to have a high resolution.
• the photosensitive resin composition includes sensitivity, Improvements in performance such as screen shape and image size accuracy are also sought at the same time.
• a “chemically amplified photosensitive resin composition” has been proposed as a high-resolution radiation-sensitive resin composition that is sensitive to short-wavelength radiation!
• This chemically amplified photosensitive resin composition contains a compound that generates an acid upon irradiation with radiation, and an acid is generated from this acid generating compound upon irradiation with radiation. Since it is advantageous in that high sensitivity can be obtained, it is replacing the conventional photosensitive resin composition and is becoming popular.
• Patent Document 1 Japanese Patent Application Laid-Open No. 2004-78217
• Patent Document 2 Japanese Patent Application Laid-Open No. 2004-184648
• the present invention provides a resist substrate processing solution for improving defects on the pattern surface after development (reattachment of foreign matter) and a resist substrate processing method using the same. Means for solving the problem
• the developed resist substrate processing solution according to the present invention comprises a nitrogen-containing water-soluble polymer or an oxygen-containing water-soluble polymer and a solvent.
• the resist pattern after the development processing is processed with a resist substrate processing liquid containing a nitrogen-containing water-soluble polymer or an oxygen-containing water-soluble polymer and a solvent. Further, the cleaning is further performed with pure water.
• the present invention there are few defects due to the resist surface that does not significantly impair the manufacturing cost and manufacturing efficiency, and the resist reattached to the substrate surface after the resist is removed.
• a pattern can be formed.
• the resist pattern after development is processed with a resist substrate processing solution.
• the method for developing the resist pattern to form the original pattern is not particularly limited, and any method can be used. Therefore, the lithography process for forming the original pattern is any known method for forming a resist pattern using a known positive photosensitive resin composition or a negative photosensitive resin composition. It may be a thing.
• a typical pattern forming method to which the resist substrate processing solution of the present invention is applied includes the following method.
• a photosensitive resin composition is applied to a surface of a substrate such as a silicon substrate or a glass substrate, which has been pre-treated as necessary, by a conventionally known coating method such as a spin coating method, and photosensitive.
• a resin composition layer is formed.
• an antireflection film may be formed on the upper layer or lower layer of the resist. Such an antireflection film can improve the cross-sectional shape and the exposure margin.
• any known photosensitive resin composition can be used in the pattern forming method of the present invention.
• Illustrative examples of the photosensitive resin composition that can be used in the pattern forming method of the present invention include the positive type, for example, those comprising a quinonediazide-based photosensitizer and an alkali-soluble resin, and chemically amplified photosensitivity.
• the negative type resin composition for example, an azide containing a polymer compound having a photosensitive group such as polycay cinnamate, an aromatic azide compound, or a cyclized rubber and a bisazide compound. Examples thereof include compounds containing compounds, diazo resins, photopolymerizable compositions containing addition polymerizable unsaturated compounds, and chemically amplified negative photosensitive resin compositions.
• a quinonediazide photosensitizer used in a positive photosensitive resin composition comprising a quinonediazide photosensitizer and an alkali-soluble resin
• 1,2-benzoquinone Toquinonediazide 5-sulfonic acid 1,2-benzoquinone Toquinonediazide 5-sulfonic acid, esters or amides of these sulfonic acids
• alkali-soluble resins include nopolac resin, polybutanol, polyvinyl alcohol, acrylic acid or methacrylic acid copolymer, etc. Is mentioned.
• Nopolac resin is produced from one or more phenols such as phenol, o-cresol, m-cresol, p-cresol and xylenol, and one or more aldehydes such as formaldehyde and paraformaldehyde. Are preferred.
• the chemically amplified photosensitive resin composition can be used in the pattern forming method of the present invention even if it is positive or negative!
• a chemically amplified resist generates an acid upon irradiation, and forms a pattern by changing the solubility of the irradiated portion in the developer by a chemical change caused by the catalytic action of this acid.
• an acid is formed by irradiation. Containing an acid-generating compound and an acid-sensitive group-containing resin that decomposes in the presence of an acid to produce an alkali-soluble group such as a phenolic hydroxyl group or a carboxyl group, an alkali-soluble resin and a crosslinking agent And those composed of an acid generator.
• the photosensitive resin composition layer formed on the substrate is pre-betated, for example, on a hot plate, and the solvent in the photosensitive resin composition is removed to form a photoresist film.
• the prebeta temperature varies depending on the solvent or the photosensitive resin composition used, and is usually 20 to 200 ° C, preferably 50 to 150 ° C.
• the photoresist film is then masked as necessary using a known irradiation device such as a high pressure mercury lamp, a metal halide lamp, an ultrahigh pressure mercury lamp, a KrF excimer laser, an ArF excimer laser, a soft X-ray irradiation device, or an electron beam drawing device. Exposure is performed via a known irradiation device such as a high pressure mercury lamp, a metal halide lamp, an ultrahigh pressure mercury lamp, a KrF excimer laser, an ArF excimer laser, a soft X-ray irradiation device, or an electron beam drawing device. Exposure is performed via a known irradiation device such as a high pressure mercury lamp, a metal halide lamp, an ultrahigh pressure mercury lamp, a KrF excimer laser, an ArF excimer laser, a soft X-ray irradiation device, or an electron beam drawing device. Exposure is performed via a known irradiation device
• the resist is usually developed using an alkaline developer.
• an alkaline developer for example, an aqueous solution such as sodium hydroxide or tetramethylammonium hydroxide (TMAH) or an aqueous solution is used.
• TMAH tetramethylammonium hydroxide
• the resist pattern is rinsed (washed) with a rinsing liquid, preferably pure water, if necessary.
• the formed resist pattern is used as a resist for etching, plating, ion diffusion, dyeing treatment, etc., and then peeled off as necessary.
• a resist substrate processing method comprises a resist pattern having an arbitrary pattern size. Can also be applied to turns. However, a remarkable improvement effect can be obtained when applied to a fine resist pattern that requires a particularly precise surface texture and size. Therefore, the resist substrate processing method according to the present invention is a lithography process in which such a fine resist pattern is formed, that is, as an exposure light source, KrF excimer laser, ArF excimer laser, X-ray, electron beam, etc. It is preferable to combine a lithography process including exposure at an exposure wavelength of 250 nm or less.
• the space portion of the line width in the line 'and' space pattern is 300 nm or less, preferably 200 nm or less, or the hole diameter in the contact hole pattern is 300 nm or less, preferably 200 nm or less. It is preferable to include a lithography process that forms a resist pattern.
• the thickness of the resist pattern and the like is appropriately selected according to the application to be used, etc. Generally 0.1 to 5 to 111, preferably 0.1 to 2.5 to m, more preferably 0. A film thickness of 2—1.5 mm is selected.
• the resist substrate is treated with a resist substrate treatment liquid containing a nitrogen-containing water-soluble polymer or an oxygen-containing water-soluble polymer and water.
• a nitrogen-containing water-soluble polymer or oxygen-containing water-soluble polymer can be selected as long as it has a nitrogen atom or an oxygen atom in its structure and is water-soluble.
• Examples of the nitrogen-containing water-soluble polymer include those containing a nitrogen atom in the molecule in the form of an amino group, a pyrazole group, an amide group or the like. Of these, water-soluble polymers containing amino groups are preferred.
• the number of nitrogen atoms contained in the polymer is not limited, but it is preferred that the number of nitrogen atoms is 5 to 5000 per molecule, in order to strongly develop the effect of pattern size miniaturization. preferable.
• a preferred nitrogen-containing water-soluble polymer is a polyamine having the following structure (I):
• L 1 and L 2 are divalent linking groups such as a single bond or a divalent functional group.
• the number of carbon atoms of L 1 and L 2 is not particularly limited, but is preferably 0-20, and more preferably 0-5.
• the type of L 1 and L 2 is not particularly limited, but is generally a hydrocarbon group, more preferably an alkylene group or an alkylene group or an arylene group.
• R 1 and R 2 are any functional groups.
• the number of carbon atoms of R 1 and R 2 is not particularly limited, but is generally hydrogen or a hydrocarbon group, preferably 0-20, more preferably 0-5.
• R 1 and R 2 is not particularly limited, but is generally a hydrocarbon group, more preferably an alkyl group, preferably an alkyl group or an aryl group.
• R 1 and R 2 may be bonded to each other to form a ring, or R 1 or R 2 may form a ring with carbon contained in L 1 or L 2 .
• p is a number representing the degree of polymerization.
• R 2 other functional groups optionally example hydroxyl, Cal Bokishiru group, an amino group, a carbonyl group or Yogu more and R 2 be substituted by such ether groups, a plurality of in one molecule Kinds may be mixed.
• R 2 contains carbon, the carbon number is selected so that the compound is soluble in water at a given concentration.
• L 1 is preferably an alkylene group and L 2 is preferably a methylene group.
• polyamines include polyallylamine, poly N-methyl linoleamine, poly N, N'-dimethyl allylamine, poly (N-methyl-3,5-piperidinedimethylene) and the like. It is done.
• the degree of polymerization of these polyamines is not particularly limited because it is arbitrarily selected depending on the structure of the monomer, the concentration of the resist substrate processing solution and the type of resist to be applied, but in the case of polyallylamine, p is 5 ⁇ 500, preferably 10-400, and in the case of poly N, ⁇ '-dimethylarlyamine, ⁇ is 5-50, preferably 5-30, and poly ( ⁇ -methyl-3, In the case of 5-piperidinedimethylene), ⁇ is 5 to 50, preferably 10 to 30.
• Specific examples of the specific structure and degree of polymerization of these preferred polymers are as follows. These are for example Nitto Boseki Co., Ltd. Etc. are commercially available.
• R 1 and R 2 are simultaneously hydrogen, that is, when the nitrogen in formula (I) forms a primary amino group, for example, the above (la) or (lb) This is particularly preferable because the effect of
• Examples of the oxygen-containing water-soluble polymer include those containing an oxygen atom in the molecule in the form of a hydroxyl group, an ether group, a carboxyl group, a carbonyl group, an amide group, or the like. Of these, water-soluble polymers containing a hydroxyl group or an ether group are preferred.
• the number of oxygen atoms contained in the polymer is not limited, but it is preferably 5 to 3000 per molecule, in order to strongly develop the effect of miniaturizing the pattern size. It is more preferable.
• a preferred oxygen-containing water-soluble polymer is a polyol having the following structure (II) or a polyether having the following structure (III).
• L 3 to L 5 are divalent linking groups, for example, single bonds or divalent functional groups.
• the number of carbons of these linking groups is not particularly limited, It is preferably 0 to 20. More preferably, it is 0 to 5.
• the type of these linking groups is not particularly limited, but is generally a single bond or a hydrocarbon group, and is a hydrocarbon group.
• R 3 is an arbitrary functional group, and includes a protective group such as an acetal group, an acetyl group, and a benzyl group, or a hydrogen group.
• the number of carbon atoms of R 3 is not particularly limited, but is generally hydrogen or a hydrocarbon group, preferably 0 to 20, more preferably 0 to 5. . q and r is a number representing the degree of polymerization.
• L 3 ⁇ L 5 And R 3 is other functional groups as necessary, for example, a hydroxyl group, a carboxyl group, an amino group, a carbonyl group may be substituted by such ether groups, further L 3 ⁇ L 5 and R 3 in one molecule
• the number of carbons is selected so that the compound can be dissolved in water at a predetermined concentration. Specific examples of such an oxygen-containing water-soluble polymer include the following compounds.
• R ′ is a carboxyl group, and the molecular weight is about 24000.
• a polymer of this formula (Ila) is commercially available as PV-205 from Kuraray Co., Ltd.
• oxygen-containing water-soluble polymer examples include polyols, polyacrylic acid, and polymethacrylic acid. These water-soluble polymers are Julimer AC—10SL (trade name: Nippon Pure Chemical Co., Ltd.) ), Poval (trade name: manufactured by Kuraray Co., Ltd.) and the like.
• nitrogen-containing water-soluble polymer or oxygen-containing water-soluble polymer can be used with any molecular weight as required, and the molecular weight is generally 500 to 200,000, preferably 1,000-000- 100,000. Since the appropriate molecular weight of the polymer varies depending on the main chain structure of the polymer and the type of functional group, it is also possible to use a polymer outside the above range.
• the resist substrate treating solution in the present invention comprises the above-described nitrogen-containing water-soluble polymer or oxygen-containing water-soluble polymer and a solvent.
• the solvent is not particularly limited, and any force that can be used is used. From the viewpoint of affinity with a developer or a rinsing solution, it is preferable to use water.
• a small amount of an organic solvent may be used as a cosolvent in order to improve wettability and the like.
• examples of such a co-solvent include alcohols such as methyl alcohol and ethyl alcohol, ketones such as acetone and methyl ethyl ketone, and esters such as ethyl acetate.
• an additional component can be included as needed. For example, a surfactant, an acidic substance, or a basic substance is included as long as the effects of the present invention are not impaired.
• the concentration of the nitrogen-containing water-soluble polymer or oxygen-containing water-soluble polymer contained in the treatment liquid is not particularly limited, but is preferably adjusted according to the purpose and method of use. That is, generally, the higher the concentration, the shorter the processing time, and the greater the effect of improving the reattachment of foreign matter on the pattern surface.
• the rinsing process with pure water after treatment with a low concentration force tends to be short.
• the optimum polymer type and concentration vary depending on the type of photosensitive resin used. For this reason, it is preferable that the concentration is balanced in accordance with the required characteristics. Therefore, the optimum concentration of nitrogen-containing water-soluble polymer or oxygen-containing water-soluble polymer is not specified! /, But is generally from 0.01 to 10%, preferably based on the total weight of the developed resist substrate processing solution 0.1 to 5%, more preferably 0.;! To 2%.
• the method of treating the resist pattern with the resist substrate processing liquid includes a method of immersing the resist substrate in the resist substrate processing liquid, and a method of dipping the resist substrate processing liquid into the resist substrate. For example, a coating method using a nozzle coating.
• the time for processing the resist substrate with the resist substrate processing solution is not particularly limited, but it is preferably 1 second or more in order to strongly develop the effect of improving the foreign matter reattachment on the pattern surface. More preferably, it is at least 2 seconds.
• the upper limit of the treatment time is not particularly limited, but is preferably 300 seconds or less from the viewpoint of efficiency in the production process.
• the temperature of the resist substrate processing solution is not particularly limited, but it is generally 5 to 50 ° C from the viewpoint of the effect of improving the reattachment of foreign matter on the pattern surface, and 20 to 30 ° C. It is preferable that
• the resist removed after development often reattaches to the surface of the resist remaining after the development or the substrate surface exposed after the resist is removed.
• the reattached resist is removed, and a surface with few defects can be formed. The reason for this is not clear! /, However, the oxygen atom or nitrogen atom constituting the water-soluble polymer contained in the resist processing solution adsorbs the reattached resist by hydrogen bonding and unpaired electrons. This is presumably because the adhered resist is removed from the substrate or the resist surface.
• the resist substrate is processed with the resist substrate processing liquid, and then washed with pure water, that is, rinsed.
• This rinsing process is performed to clean the resist substrate processing solution.
• the resist substrate may cause problems due to processing solution components remaining on the resist surface in later processes, for example, the etching process, and the rinsing process after processing is indispensable. is there.
• a rinsing process is carried out after development and before treating the resist substrate with a treatment liquid containing the polymer according to the present invention.
• This rinsing process is performed in order to wash the developer adhering to the resist pattern.
• a rinse treatment with pure water is performed after the development and before the processing with the processing solution. Preferably it is done.
• the method of rinsing with pure water can be performed by any method, such as a resist group. This can be done by immersing the plate in a rinsing solution or by dropping, spraying or spraying the rinsing solution onto the rotating resist substrate surface.
• the developed resist pattern is treated with the resist substrate treating solution.
• the ability to process with a processing solution without drying If necessary, dry it immediately after development or after rinsing after development, and then process with a processing solution. According to the present invention.
• the resist pattern whose surface properties have been improved by the method for treating a resist substrate according to the present invention is subsequently processed according to the application.
• the resist substrate processing method according to the present invention can be processed by a conventional method with no particular limitation.
• the pattern thus formed by the method of the present invention can be applied to a flat panel display (FPD) such as a semiconductor device or a liquid crystal display element, a charge coupled device (CCD), a color filter, or a magnetic head. It can be applied in the same way as patterns produced by the method.
• FPD flat panel display
• CCD charge coupled device
• AZ Electronic Materials' anti-reflective coating AZ KrF-17B (' ⁇ ' is a registered trademark, the same shall apply hereinafter) is spin-coated on an 8-inch silicon wafer using a spin coater manufactured by Tokyo Electron, and heated at 180 ° C for 60 seconds. The beta was adjusted to obtain an 800 A film. The film thickness was measured with a film thickness measuring device manufactured by Prometrisk. Next, the photo resist AZ DX6850P (chemically amplified resist for 248 nm exposure containing a polymer based on polystyrene) manufactured by AZ Electrotechnics Co., Ltd. is spin-coated on the resulting anti-reflective coating at 100 ° C.
• Beta adjustment was performed on a hot plate for 90 seconds, and adjustment was made so that a resist film of 0.68 mm was obtained. Then, exposure was performed using a Quadropole with Canon's reduced projection exposure apparatus FPA3000EX5 (wavelength 248 nm). After exposure, subjected to 11 0 ° C, 60 seconds beta hot plate at, AZ Electronic Materials Co., Ltd. developer AZ 300MI F Developer (2, 38 weight 0/0 hydroxide tetramethylammonium Niu anhydrous solution) paddle with Developed (23 ° C, 1 minute). Next, rinsing with pure water was performed, followed by spin drying to obtain a 250 nm short line pattern.
• the substrate was rinsed with pure water, treated with a resist substrate treating solution for 15 seconds, and further rinsed with pure water for 15 seconds.
• the resist substrate processing solution used contained triethanolamine at the concentration shown in Table 1.
• the resist substrate processing solution used contained the polymers listed in Table 1 at the concentrations described in Table 1.

Landscapes

• Physics & Mathematics (AREA)
• General Physics & Mathematics (AREA)
• Photosensitive Polymer And Photoresist Processing (AREA)
• Materials For Photolithography (AREA)
• Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
• Cleaning Or Drying Semiconductors (AREA)

Priority Applications (2)

Applications Claiming Priority (2)

Publications (1)

Family

ID=39313951

Family Applications (1)

Country Status (7)

Cited By (1)

Families Citing this family (5)

Citations (5)

Family Cites Families (17)

• 2006
  • 2006-10-19 JP JP2006285262A patent/JP2008102343A/ja active Pending
• 2007
  • 2007-10-12 CN CNA2007800377970A patent/CN101523295A/zh active Pending
  • 2007-10-12 KR KR1020097010135A patent/KR20090079242A/ko not_active Ceased
  • 2007-10-12 US US12/311,724 patent/US20100028817A1/en not_active Abandoned
  • 2007-10-12 EP EP07829714A patent/EP2088469A4/en not_active Withdrawn
  • 2007-10-12 WO PCT/JP2007/069978 patent/WO2008047720A1/ja not_active Ceased
  • 2007-10-17 TW TW096138774A patent/TW200836025A/zh unknown

Patent Citations (5)

Non-Patent Citations (1)

Also Published As

Similar Documents

Legal Events