CN101523295A - 显影后抗蚀基板处理溶液及使用它的抗蚀基板处理方法 - Google Patents

显影后抗蚀基板处理溶液及使用它的抗蚀基板处理方法 Download PDF

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Publication number
CN101523295A
CN101523295A CNA2007800377970A CN200780037797A CN101523295A CN 101523295 A CN101523295 A CN 101523295A CN A2007800377970 A CNA2007800377970 A CN A2007800377970A CN 200780037797 A CN200780037797 A CN 200780037797A CN 101523295 A CN101523295 A CN 101523295A
Authority
CN
China
Prior art keywords
treatment solution
resist
substrate treatment
against corrosion
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007800377970A
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English (en)
Chinese (zh)
Inventor
能谷刚
岛崎龙太
小林政一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AZ Electronic Materials Japan Co Ltd
Original Assignee
AZ Electronic Materials Japan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AZ Electronic Materials Japan Co Ltd filed Critical AZ Electronic Materials Japan Co Ltd
Publication of CN101523295A publication Critical patent/CN101523295A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CNA2007800377970A 2006-10-19 2007-10-12 显影后抗蚀基板处理溶液及使用它的抗蚀基板处理方法 Pending CN101523295A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006285262A JP2008102343A (ja) 2006-10-19 2006-10-19 現像済みレジスト基板処理液とそれを用いたレジスト基板の処理方法
JP285262/2006 2006-10-19

Publications (1)

Publication Number Publication Date
CN101523295A true CN101523295A (zh) 2009-09-02

Family

ID=39313951

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007800377970A Pending CN101523295A (zh) 2006-10-19 2007-10-12 显影后抗蚀基板处理溶液及使用它的抗蚀基板处理方法

Country Status (7)

Country Link
US (1) US20100028817A1 (https=)
EP (1) EP2088469A4 (https=)
JP (1) JP2008102343A (https=)
KR (1) KR20090079242A (https=)
CN (1) CN101523295A (https=)
TW (1) TW200836025A (https=)
WO (1) WO2008047720A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5000260B2 (ja) * 2006-10-19 2012-08-15 ＡｚエレクトロニックマテリアルズＩｐ株式会社 微細化されたパターンの形成方法およびそれに用いるレジスト基板処理液
JP5306755B2 (ja) * 2008-09-16 2013-10-02 ＡｚエレクトロニックマテリアルズＩｐ株式会社 基板処理液およびそれを用いたレジスト基板処理方法
JP5591623B2 (ja) * 2010-08-13 2014-09-17 ＡｚエレクトロニックマテリアルズＩｐ株式会社 リソグラフィー用リンス液およびそれを用いたパターン形成方法
JP5705669B2 (ja) * 2011-07-14 2015-04-22 メルクパフォーマンスマテリアルズＩｐ合同会社 微細パターン形成用組成物およびそれを用いた微細化されたパターン形成方法
US9097977B2 (en) 2012-05-15 2015-08-04 Tokyo Electron Limited Process sequence for reducing pattern roughness and deformity
CA2895717A1 (en) 2012-12-21 2014-06-26 Covanta Energy, Llc Gasification combustion system

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US3833531A (en) * 1970-04-22 1974-09-03 Hercules Inc Reaction products of epihalohydrin and polymers of diallylamine and salts thereof and their use in paper
US3700623A (en) * 1970-04-22 1972-10-24 Hercules Inc Reaction products of epihalohydrin and polymers of diallylamine and their use in paper
US4053512A (en) * 1976-08-02 1977-10-11 American Cyanamid Company Process for preparing poly(allyltrialkylammonium) salt flocculants
US4350759A (en) * 1981-03-30 1982-09-21 Polaroid Corporation Allyl amine polymeric binders for photographic emulsions
JPS60110987A (ja) * 1983-11-15 1985-06-17 日東紡績株式会社 染色堅牢度向上法
US4537831A (en) * 1984-02-22 1985-08-27 Air Products And Chemicals, Inc. Crosslinking of chlorine-containing polymers
US6203785B1 (en) * 1996-12-30 2001-03-20 Geltex Pharmaceuticals, Inc. Poly(diallylamine)-based bile acid sequestrants
TW372337B (en) * 1997-03-31 1999-10-21 Mitsubishi Electric Corp Material for forming micropattern and manufacturing method of semiconductor using the material and semiconductor apparatus
AU9184998A (en) * 1997-10-29 1999-05-17 Nitto Boseki Co. Ltd. Processes for producing n,n-dialkylallylamine polymers and n,n-dialkylallylaminepolymers
US7129199B2 (en) 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
JP2001066782A (ja) * 1999-08-26 2001-03-16 Mitsubishi Electric Corp 半導体装置の製造方法並びに半導体装置
US7189783B2 (en) * 2001-11-27 2007-03-13 Fujitsu Limited Resist pattern thickening material, resist pattern and forming process thereof, and semiconductor device and manufacturing process thereof
JP4045180B2 (ja) 2002-12-03 2008-02-13 Ａｚエレクトロニックマテリアルズ株式会社 リソグラフィー用リンス液およびそれを用いたレジストパターン形成方法
EP1584633B1 (en) * 2003-04-01 2010-10-20 Nitto Boseki Co., Ltd. Modified polyallylamine and process for producing the same
JP4864698B2 (ja) * 2004-04-23 2012-02-01 東京応化工業株式会社 リソグラフィー用リンス液
JP2006011054A (ja) * 2004-06-25 2006-01-12 Shin Etsu Chem Co Ltd リンス液及びこれを用いたレジストパターン形成方法
JP2006030483A (ja) * 2004-07-14 2006-02-02 Tokyo Electron Ltd リンス処理方法および現像処理方法
JPWO2006025303A1 (ja) * 2004-09-01 2008-07-31 東京応化工業株式会社 リソグラフィー用リンス液とレジストパターン形成方法
JP4676325B2 (ja) * 2005-02-18 2011-04-27 富士通株式会社 レジストパターン厚肉化材料、レジストパターンの形成方法、半導体装置及びその製造方法
US7528200B2 (en) * 2006-02-01 2009-05-05 Ardes Enterprises, Inc. Epoxy hardener systems based on aminobis(methylene-ethyleneurea)
US7745077B2 (en) * 2008-06-18 2010-06-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
US20100028803A1 (en) * 2008-08-01 2010-02-04 Fujifilm Corporation Surface treating agent for resist pattern formation, resist composition, method of treating surface of resist pattern therewith and method of forming resist pattern

Also Published As

Publication number Publication date
JP2008102343A (ja) 2008-05-01
WO2008047720A1 (en) 2008-04-24
KR20090079242A (ko) 2009-07-21
US20100028817A1 (en) 2010-02-04
EP2088469A4 (en) 2010-10-20
TW200836025A (en) 2008-09-01
EP2088469A1 (en) 2009-08-12

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Open date: 20090902