WO2008014679A1 - Pâte moyenne lanthanidique pour circuit à couche épaisse lanthanidique sur substrat métallique et son procédé de production - Google Patents

Pâte moyenne lanthanidique pour circuit à couche épaisse lanthanidique sur substrat métallique et son procédé de production Download PDF

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Publication number
WO2008014679A1
WO2008014679A1 PCT/CN2007/002225 CN2007002225W WO2008014679A1 WO 2008014679 A1 WO2008014679 A1 WO 2008014679A1 CN 2007002225 W CN2007002225 W CN 2007002225W WO 2008014679 A1 WO2008014679 A1 WO 2008014679A1
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WO
WIPO (PCT)
Prior art keywords
rare earth
slurry
metal substrate
organic solvent
glass
Prior art date
Application number
PCT/CN2007/002225
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English (en)
Chinese (zh)
Inventor
Ke Zheng Wang
Original Assignee
Ke Zheng Wang
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ke Zheng Wang filed Critical Ke Zheng Wang
Publication of WO2008014679A1 publication Critical patent/WO2008014679A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H01C17/0656—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of silicides

Definitions

  • the present invention relates to rare earth thick film circuit rare earth medium slurry based on metal substrate, and particularly relates to a ferritic stainless steel series substrate, for example: national standard lCrl5, lCrl7, 00Crl2 and other foreign brands such as 429#, 43Q#, 410IJ and other high-power rare earth thick film circuit rare earth medium slurry and its preparation technology.
  • the new heating element requires small volume, large power, small thermal inertia, large surface thermal load, low power consumption, high thermal efficiency, fast hot start, stable power, uniform temperature field, and process. Good performance, self-controlled temperature, safe and reliable operation, long life and wide adaptability; At present, there is no heating element that can meet the above requirements, so a new type of electric heating element such as rare earth thick film electric heating element is used to meet the above requirements. It is imperative.
  • the object of the present invention is to provide a high breakdown strength, good rim performance, printing characteristics, and burning
  • Another object of the present invention is to provide a method for preparing a rare earth dielectric slurry of the above rare earth thick film circuit.
  • the rare earth dielectric slurry of the rare earth thick film circuit based on the metal substrate is prepared by a solid phase component and an organic solvent carrier according to a certain preparation process, wherein the weight ratio of the solid phase component to the organic solvent is: 65 ⁇ 85: 35 ⁇ 15.
  • the solid phase component is: Si0 2 - Al 2 0 3 -Ca0-B 2 0 3 - L 0 3 based glass ceramics, and the distribution ratio of each oxide is: Si0 2 (30 ⁇ 70%), A1 2 0 3 (5 ⁇ 30%), Ca0 (20 ⁇ 40%), B 2 0 3 (1 ⁇ 15%), La 2 0 3 (0 ⁇ 3 ⁇ 15%), Co 2 0 3 (0. 05 ⁇ 10%), Ti0 2 (1 ⁇ 10 %), Zr0 2 (1 ⁇ 10%):
  • the distribution ratio (weight) of each group of the organic solvent carrier is: butyl carbitol (66 to 89%), tributyl citrate (5 to 15%), ethyl cellulose (0.5 to 10%), hydrogenation Castor oil (0. 1 ⁇ 5%), lecithin (0.1 to 5%).
  • the rare earth thick pancreatic circuit rare earth medium slurry based on the metal substrate of the invention and the preparation technology thereof are as follows:
  • organic solvent carrier The following main solvent, thickener, thixotropic agent, surface
  • the active agent is immersed in water at 80 to 100 ° C for several hours.
  • Butyl carbitol (66 to 89%), tributyl citrate (5 to: 15%), ethyl cellulose (0. 5 ⁇
  • the ethyl cellulose content was adjusted, and the viscosity of the organic solvent carrier was measured by a viscometer, and the viscosity of the organic vehicle was adjusted to be in the range of 150 to 280 mPas.
  • 3 medium slurry preparation the weight ratio of the solid phase component to the organic solvent carrier is: 65 ⁇ 85: 35 ⁇ : L5. After being placed in a three-dimensional mixer and stirred and dispersed, the product was rolled by a three-roll mill. The viscosity of the slurry was measured with a viscometer and the viscosity value was 60 to 250 PaS/RPM.
  • the REE slurry was determined by kinetic analysis of the swelling coefficient, glass transition temperature, glass softening temperature and nucleation growth of Si0 2 - ⁇ 1 2 0 3 - CaO - ⁇ 2 0 3 - La 2 0 3 system. Glass crystallizing formula and preparation process. The expansion coefficient is matched with the metal substrate, and the combination is firm, and the breakdown strength and the insulation performance are effectively improved.
  • Y203 rare earth yttrium oxide
  • Rare earth lanthanum (La) doping greatly changes the sintering properties, microstructure, density, phase composition and physical and mechanical properties of the glass-ceramic material phase. Thereby, the dielectric strength, electrical performance, process performance and wettability, compatibility and molecular bonding strength of the rare earth thick film circuit electric heating element are improved. Improve the process and significantly improve the product's excellent rate.
  • the rare earth dielectric paste of the rare earth dielectric film of the invention has excellent printing performance and sintering performance. versus The rare earth resistor paste and the conductor paste have excellent wettability and compatibility.
  • the rare earth functional electronic paste of the invention can be prepared not only on a metal substrate but also on a glass ceramic, ceramic and other metal non-metal substrates. It can be prepared not only on a flat surface but also on a curved surface. The scope of use is quite extensive.
  • the technical materials of the invention do not need to rely on imports. 100% localization, reducing the amount of precious metals, low cost, low material consumption and energy saving. It meets the requirements of the new industrialization road of circular economy advocated by China (high scientific and technological content, good economic benefit, low resource consumption, and low environmental pollution), and it has strong prospects for foreign exchange earning.
  • the invention is compatible with various metal substrates, resistive pastes, and point paste pastes by adjusting functional phase composition, content, and sintering process.
  • an alumina substrate A1 2 0 3
  • an aluminum nitride (AIN) substrate AIN
  • AIN aluminum nitride
  • the rare earth medium slurry for the rare earth thick film circuit of the invention and the preparation technique thereof are suitable for the ferrite series stainless steel substrate.
  • the electric heating element adopting the invention completely satisfies the small volume, large power, small thermal inertia, large surface heat load, low power consumption, high thermal efficiency, fast hot start, stable power, uniform temperature field, good processability, and body self-control temperature. It is safe and reliable to operate, has a long service life, and meets the requirements of new heating elements with a wide range of applications. Specific implementation plan:
  • Embodiment 1 is a diagrammatic representation of Embodiment 1:
  • This embodiment is a rare earth thick film circuit rare earth medium slurry for lCrl5 (429#) series stainless steel metal substrate. It is composed of solid phase component composed of glass ceramic powder and organic solvent carrier.
  • the composition and formulation process are as follows: :
  • the solid phase composition is made of Si0 2 - A1 2 0 3 - CaO- B 2 0 3 - La 2 0 3 glass ceramics.
  • the formula is: Si0 2 (36%), A1 2 0 3 (16%), Ca0 (25%), B 2 0 3 (7%), L3 ⁇ 40 3 (6%), Co 2 0 3 (2%), Ti0 2 (5%), Zr0 2 (3):
  • the melting temperature is: 1350 ⁇ After 120 minutes of heat preservation, it is quickly discharged and quenched to obtain glass micro slag.
  • the glass slag was placed in a two-stage ball mill ball mill to prepare a glass-ceramic powder having a particle diameter of less than 3 ⁇ m.
  • the ethyl cellulose content was adjusted, and the viscosity of the organic solvent carrier was measured by a viscometer, and the viscosity of the organic vehicle was adjusted to be in the range of 150 to 280 mPas.
  • Rare earth thick film circuit rare earth medium slurry for 1 7 (430#) series stainless steel metal substrate the medium slurry is composed of solid phase component composed of glass ceramic powder and organic solvent carrier, and the process steps and formula are as follows:
  • the melting temperature is: 1350 ⁇ After 120 minutes of heat preservation, it is quickly discharged and quenched to obtain glass micro slag.
  • the glass slag was placed in a two-stage ball mill ball mill to prepare a glass-ceramic powder having a particle diameter of less than 3 ⁇ m.
  • the thickness of the rare earth dielectric slurry film layer is: 85 ⁇ ⁇
  • rare earth lanthanum significantly improves the electrical properties, adhesion, puncture strength and insulation properties of thick film circuits, and improves thick film.
  • the preparation process of circuit electronic paste improves product quality and efficiency. Therefore, it is called rare earth thick film circuit rare earth dielectric paddle.
  • the rare earth medium slurry for rare earth thick film circuit of the invention and the preparation process thereof are suitable for the ferrite series stainless steel substrate.
  • ferrite series stainless steel substrate For example: National standard number lCrl5, lCrl7, 00Crl2, etc. Foreign brands 429#, 430#, 410L# and so on.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Glass Compositions (AREA)
  • Inorganic Insulating Materials (AREA)

Abstract

L'invention concerne une pâte moyenne lanthanidique destinée à un circuit à couche épaisse lanthanidique sur substrat métallique ainsi que son procédé de production. Cette pâte comprend un constituant en phase solide et un support solvant organique en proportion en poids de (70-90):(30-10). Le constituant en phase solide est un verre microcristallin à base de SiO2-Al2O3-CaO-B2O3-La2O3, le pourcentage en poids du SiO2 étant compris entre 30% et 65%, celui de l'Al2O3 entre 5% et 26%, celui du CaO entre 18% et 38%, celui du B2O3 entre 2% et 16%, celui du La2O3 entre 0,3% et 15%, celui du Co2O3 entre 0,05% et 6%, celui du TiO2 entre 1% et 10%, et celui du ZrO2 entre 1% et 10%. Le procédé de production de cette pâte consiste (1) à préparer une poudre de verre microcristallin lanthanidique, (2) à préparer le support solvant organique, (3) à réaliser un mélange par trio de rouleaux et un laminage par trio de rouleaux, et (4) à préparer la pâte lanthanidique. Cette pâte est destinée à un substrat en acier inoxydable à base de ferrite.
PCT/CN2007/002225 2006-07-28 2007-07-23 Pâte moyenne lanthanidique pour circuit à couche épaisse lanthanidique sur substrat métallique et son procédé de production WO2008014679A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200610036717.7 2006-07-28
CNB2006100367177A CN100499941C (zh) 2006-07-28 2006-07-28 基于金属基板的稀土厚膜电路稀土介质浆料及其制备工艺

Publications (1)

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WO2008014679A1 true WO2008014679A1 (fr) 2008-02-07

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CN (1) CN100499941C (fr)
WO (1) WO2008014679A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116535893A (zh) * 2023-04-28 2023-08-04 有研稀土新材料股份有限公司 一种具有梯度挥发速率的有机浆料及制备方法

Families Citing this family (11)

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Publication number Priority date Publication date Assignee Title
CN101106842B (zh) * 2007-07-24 2011-12-21 王晨 基于微晶玻璃基板的厚膜电路电热元件及其制备工艺
CN101613209B (zh) * 2009-07-16 2013-02-06 中国人民解放军国防科学技术大学 Cf/SiC复合材料的高温抗氧化涂层、涂层用浆料及其制备方法
CN102280162A (zh) * 2011-07-19 2011-12-14 彩虹集团公司 一种用于厚膜电路的隔离介质材料及其制备方法
CN102354687B (zh) * 2011-07-19 2013-08-14 彩虹集团公司 一种用于厚膜电路的阻挡介质材料及其制备方法
CN103177794B (zh) * 2011-12-26 2016-03-30 浙江昱辉阳光能源有限公司 太阳能电池用背银浆料及其制备方法
CN102685942B (zh) * 2012-05-29 2014-05-07 王克政 一种ptc稀土厚膜电路智能电热元件及其制备方法
CN104318979A (zh) * 2014-09-19 2015-01-28 王晨 复合材料基厚膜电路稀土介质浆料及其制备工艺
CN105472791A (zh) * 2015-12-23 2016-04-06 东莞珂洛赫慕电子材料科技有限公司 一种稀土掺杂半导体红外辐射厚膜电子浆料及其制备方法
CN106601392B (zh) * 2016-11-14 2018-11-27 东莞珂洛赫慕电子材料科技有限公司 一种适配铝碳化硅基材的介质浆料及其制备方法
CN107068244A (zh) * 2016-12-09 2017-08-18 东莞珂洛赫慕电子材料科技有限公司 一种应用于铝基板厚膜电路的绝缘介质浆料及其制备方法
CN106653151A (zh) * 2017-01-12 2017-05-10 东莞珂洛赫慕电子材料科技有限公司 一种高温红外调频介质浆料及其制备方法

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JPH08186006A (ja) * 1994-12-28 1996-07-16 Du Pont Kk 厚膜抵抗体組成物
JPH1012406A (ja) * 1996-06-18 1998-01-16 Marcon Electron Co Ltd 積層セラミックバリスタ
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CN1424729A (zh) * 2002-12-30 2003-06-18 中国人民解放军国防科学技术大学 基于不锈钢基板的大功率厚膜电路用介质浆料及其制备工艺
CN1424728A (zh) * 2002-12-30 2003-06-18 中国人民解放军国防科学技术大学 基于不锈钢基板的大功率厚膜电路用导电浆料及其制备工艺
CN1588573A (zh) * 2004-07-28 2005-03-02 王克政 Ptc厚膜电路可控电热元件

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Publication number Priority date Publication date Assignee Title
US5277844A (en) * 1993-03-29 1994-01-11 Rainey Clifford S Resistor composition
JPH08186006A (ja) * 1994-12-28 1996-07-16 Du Pont Kk 厚膜抵抗体組成物
JPH1012406A (ja) * 1996-06-18 1998-01-16 Marcon Electron Co Ltd 積層セラミックバリスタ
JP2002367804A (ja) * 2001-06-11 2002-12-20 K-Tech Devices Corp 抵抗器
CN1424727A (zh) * 2002-12-30 2003-06-18 中国人民解放军国防科学技术大学 基于不锈钢基板的大功率厚膜电路用电阻浆料及其制备工艺
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116535893A (zh) * 2023-04-28 2023-08-04 有研稀土新材料股份有限公司 一种具有梯度挥发速率的有机浆料及制备方法

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CN1909749A (zh) 2007-02-07
CN100499941C (zh) 2009-06-10

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