WO2007125834A1 - 半導体樹脂モールド用離型フィルム - Google Patents
半導体樹脂モールド用離型フィルム Download PDFInfo
- Publication number
- WO2007125834A1 WO2007125834A1 PCT/JP2007/058648 JP2007058648W WO2007125834A1 WO 2007125834 A1 WO2007125834 A1 WO 2007125834A1 JP 2007058648 W JP2007058648 W JP 2007058648W WO 2007125834 A1 WO2007125834 A1 WO 2007125834A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- release film
- mold
- release
- resin
- Prior art date
Links
- 229920005989 resin Polymers 0.000 title claims abstract description 89
- 239000011347 resin Substances 0.000 title claims abstract description 89
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 230000035699 permeability Effects 0.000 claims abstract description 36
- 229920003023 plastic Polymers 0.000 claims abstract description 35
- 239000004033 plastic Substances 0.000 claims abstract description 35
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000008096 xylene Substances 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 15
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 15
- 230000004888 barrier function Effects 0.000 claims abstract description 12
- 229920001577 copolymer Polymers 0.000 claims abstract description 12
- 239000005977 Ethylene Substances 0.000 claims abstract description 10
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000000395 magnesium oxide Substances 0.000 claims abstract description 5
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 145
- 230000001629 suppression Effects 0.000 claims description 37
- 239000011241 protective layer Substances 0.000 claims description 19
- 229910001220 stainless steel Inorganic materials 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 238000011109 contamination Methods 0.000 abstract description 19
- 238000000465 moulding Methods 0.000 abstract description 10
- 239000010408 film Substances 0.000 description 136
- 239000007789 gas Substances 0.000 description 87
- -1 polytetrafluoroethylene Polymers 0.000 description 13
- 239000003822 epoxy resin Substances 0.000 description 12
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 description 12
- 229920000647 polyepoxide Polymers 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 4
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- 238000012546 transfer Methods 0.000 description 4
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- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000001569 carbon dioxide Substances 0.000 description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 description 3
- 238000001723 curing Methods 0.000 description 3
- 208000028659 discharge Diseases 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 229920001778 nylon Polymers 0.000 description 3
- 239000002985 plastic film Substances 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 3
- BLTXWCKMNMYXEA-UHFFFAOYSA-N 1,1,2-trifluoro-2-(trifluoromethoxy)ethene Chemical compound FC(F)=C(F)OC(F)(F)F BLTXWCKMNMYXEA-UHFFFAOYSA-N 0.000 description 2
- MIZLGWKEZAPEFJ-UHFFFAOYSA-N 1,1,2-trifluoroethene Chemical group FC=C(F)F MIZLGWKEZAPEFJ-UHFFFAOYSA-N 0.000 description 2
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 2
- UZKWTJUDCOPSNM-UHFFFAOYSA-N 1-ethenoxybutane Chemical compound CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 2
- QMIWYOZFFSLIAK-UHFFFAOYSA-N 3,3,3-trifluoro-2-(trifluoromethyl)prop-1-ene Chemical group FC(F)(F)C(=C)C(F)(F)F QMIWYOZFFSLIAK-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N butyl alcohol Substances CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- UUAGAQFQZIEFAH-UHFFFAOYSA-N chlorotrifluoroethylene Chemical compound FC(F)=C(F)Cl UUAGAQFQZIEFAH-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- FJKIXWOMBXYWOQ-UHFFFAOYSA-N ethenoxyethane Chemical compound CCOC=C FJKIXWOMBXYWOQ-UHFFFAOYSA-N 0.000 description 2
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical group FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 229920009441 perflouroethylene propylene Polymers 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920001225 polyester resin Polymers 0.000 description 2
- 239000004645 polyester resin Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 2
- 239000004071 soot Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- NDMMKOCNFSTXRU-UHFFFAOYSA-N 1,1,2,3,3-pentafluoroprop-1-ene Chemical group FC(F)C(F)=C(F)F NDMMKOCNFSTXRU-UHFFFAOYSA-N 0.000 description 1
- WFLOTYSKFUPZQB-UHFFFAOYSA-N 1,2-difluoroethene Chemical group FC=CF WFLOTYSKFUPZQB-UHFFFAOYSA-N 0.000 description 1
- VXNZUUAINFGPBY-UHFFFAOYSA-N 1-Butene Chemical compound CCC=C VXNZUUAINFGPBY-UHFFFAOYSA-N 0.000 description 1
- FCBJLBCGHCTPAQ-UHFFFAOYSA-N 1-fluorobutane Chemical compound CCCCF FCBJLBCGHCTPAQ-UHFFFAOYSA-N 0.000 description 1
- QGHDLJAZIIFENW-UHFFFAOYSA-N 4-[1,1,1,3,3,3-hexafluoro-2-(4-hydroxy-3-prop-2-enylphenyl)propan-2-yl]-2-prop-2-enylphenol Chemical group C1=C(CC=C)C(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C(CC=C)=C1 QGHDLJAZIIFENW-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- 101001012040 Pseudomonas aeruginosa (strain ATCC 15692 / DSM 22644 / CIP 104116 / JCM 14847 / LMG 12228 / 1C / PRS 101 / PAO1) Immunomodulating metalloprotease Proteins 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- IAQRGUVFOMOMEM-UHFFFAOYSA-N butene Natural products CC=CC IAQRGUVFOMOMEM-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
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- 238000007796 conventional method Methods 0.000 description 1
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- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- QHSJIZLJUFMIFP-UHFFFAOYSA-N ethene;1,1,2,2-tetrafluoroethene Chemical compound C=C.FC(F)=C(F)F QHSJIZLJUFMIFP-UHFFFAOYSA-N 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 229920001903 high density polyethylene Polymers 0.000 description 1
- 239000004700 high-density polyethylene Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920011301 perfluoro alkoxyl alkane Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/56—Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
- B29C33/68—Release sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
- H01L21/566—Release layers for moulds, e.g. release layers, layers against residue during moulding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/3154—Of fluorinated addition polymer from unsaturated monomers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
- Y10T428/31692—Next to addition polymer from unsaturated monomers
Definitions
- the present invention relates to a release film for a semiconductor resin mold, and more particularly to a release film for a semiconductor resin mold that can reduce mold contamination.
- semiconductor elements are usually sealed with resin (mold resin) for protection and blocking from the external environment (outside air, contaminants, light, magnetism, high frequency, impact, etc.) It is mounted on the board in the form of a semiconductor package that houses the inside.
- resin molding resin
- it is formed by transfer molding in which a thermosetting resin (mold resin) such as epoxy resin is heated and melted, and then transferred into a mold in which a semiconductor chip is set, and filled and cured.
- a mold release agent is added to the mold resin in addition to a curing agent, a curing accelerator, a filler, etc., in order to ensure a smooth release of the molded package from the mold.
- mold resin used in semiconductor device packages has been changed to non-halogen mold resin to cope with the environment, and the fine pitch of semiconductors has been reduced.
- mold resin is becoming more viscous and liquid resin. Therefore, in the resin molding process for semiconductor elements, the amount of gas and low-viscosity substances generated from the molten mold resin in a high-temperature environment increases, and the gas and low-viscosity that permeate the above mold release film. The material has come into contact with a hot mold, and mold contamination has become severe.
- the release film is coated by adsorbing and supporting the film on the mold surface in a vacuum, but the volatile component force such as oligomers in the film is transferred to the adsorbed mold side. May cause mold contamination.
- Patent Documents 1 and 2 described above in order to reduce the permeating contaminants, one side of the release film (the surface in contact with the mold surface) is made of metal or metal oxide.
- the formation of a deposited layer is described.
- the metal deposition layer, etc. is used in direct physical contact with the mold surface, and is used in the semiconductor resin molding process as soon as the metal powder is peeled off from the film surface or the cut surface of the film. Was restricted.
- the gas permeability of the release film is defined by the permeability of carbon dioxide gas. This is the permeability of a low-viscosity substance from a resin or the like. It is not a valid indicator to evaluate.
- the release film is required to have a higher releasability with the mold resin. With respect to the above release film, no consideration is given to these, and the release film is released. There was also a problem that the moldability was insufficient.
- Patent Document 1 Japanese Patent Application Laid-Open No. 2002-361643 (Claims (Claims 1 to 3), [0002] to [0028])
- Patent Document 2 Japanese Unexamined Patent Application Publication No. 2004-79566 (Claims (Claims 1 to 3), [0002] to [0015])
- Patent Document 3 Japanese Patent Laid-Open No. 2001-250838 (Claims (Claims:! To 6), [0002 ] To [0032])
- An object of the present invention is strongly demanded based on the above-mentioned background, and a release film that has significantly lower gas permeability than the conventional one and extremely low mold contamination by a mold resin. Is to provide.
- an object of the present invention is to provide a release film that effectively suppresses mold contamination with a gas permeability that more realistically corresponds to a low-viscosity material such as resin that is a mold contaminant. It is to define the necessary gas permeability.
- an object of the present invention is to provide a release film having a higher release property with respect to a mold resin.
- a laminate including the following adhesive layer is provided.
- [1] It consists of a release layer (I) having excellent release properties, a plastic support layer (II) that supports the release layer, and a metal or metal oxide formed between the release layer and the support layer. It has a gas permeation suppression layer ( ⁇ I), and xylene gas permeability at 170 ° C is 10-15 (kmol'm / (s'm 2 'kP a)) or less Release film for gas barrier semiconductor resin mold.
- ⁇ I gas permeation suppression layer
- xylene gas permeability at 170 ° C is 10-15 (kmol'm / (s'm 2 'kP a)) or less Release film for gas barrier semiconductor resin mold.
- the release film according to [1] wherein the release layer (I) is formed of a fluororesin.
- the fluororesin is an ethylene / tetrafluoroethylene copolymer.
- gas permeation suppression layer (III) is at least one metal layer selected from the group consisting of ananolium, tin, chromium and stainless steel force.
- the release film as described.
- a release film that is extremely less contaminated with mold resin due to a mold resin that has remarkably lower gas permeability than conventional ones.
- the gas permeability necessary for a release film that effectively suppresses mold contamination is defined by a gas permeability that more realistically corresponds to a low-viscosity material such as resin that is a mold contaminant.
- a release film having higher releasability with a mold resin is provided.
- the release film of this invention provides the release film excellent in metal mold
- FIG. 1 is an explanatory view showing a layer structure of a gastrio release film of the present invention.
- FIG. 2 is an explanatory view showing the layer structure of the gastrio release film of the present invention.
- FIG. 3 is an explanatory view showing the layer structure of the gastrio release film of the present invention.
- FIG. 4 is an explanatory view showing a layer structure of the gastrio release film of the present invention.
- FIG. 5 is an explanatory view showing the layer structure of the gas barrier release film of the present invention.
- FIG. 6 is an explanatory view showing the layer structure of the gas barrier release film of the present invention.
- Gas barrier layer gas permeation suppression layer
- metal oxide deposition layer
- the release film 1 for semiconductor resin mold of the present invention comprises at least a release layer (I) excellent in release properties and a plastic support layer (II) that supports the release layer. It has a layer structure in which a gas permeation suppression layer (III) made of metal or metal oxide is formed between the release layer and the support layer, and its xylene gas permeability at 170 ° C is 10-15 (km ol- m / (s ⁇ m 2 ⁇ kPa)) or less.
- the release layer (I) in the release film of the present invention is a layer that is disposed toward the surface to be sealed of the semiconductor element and comes into contact with the mold resin injected into the mold. It is a layer that imparts sufficient releasability to the mold resin.
- the resin for forming the release layer is not particularly limited as long as it has releasability with respect to a mold resin such as an epoxy resin. Les, preferably formed.
- Fluororesin includes ethylene / tetrafluoroethylene copolymer (hereinafter referred to as “ETFE”), black-filled trifluoroethylene resin (hereinafter referred to as “CTFE”), polytetrafluoroethylene (hereinafter referred to as “ETFE”). (Hereinafter referred to as “PTFE”), vinylidene fluoride resin (hereinafter referred to as “VdF”), fluorinated resin (hereinafter referred to as “VF”), tetrafluoroethylene / hexafluoro.
- FEP Propylene copolymer
- PFA tetrafluoroethylene / perfluoro (propyl vinyl ether) copolymer
- tetrafluoroethylene / fluoride examples thereof include vinylidene copolymers and composites of these resins.
- Preferred are ETFE, PTFE, FEP and PFA, and more preferred is ETFE.
- ETFE also includes release units based on one or more other monomers in a range that does not impair releasability and relieve essential properties.
- TFE trifnoreo-ethylene
- PFP pentafluoropropylene
- HFIB hexafluoro
- the release layer (I) is supported by the plastic support layer (II) having the necessary rigidity.
- the thickness of the layer may be a thickness necessary and sufficient for imparting releasability.
- the thickness is usually 3 to 75 ⁇ m, preferably 6 to 30 / im.
- (III) is a gas permeation suppression layer as described later in detail.
- the release layer (on the side to be laminated and bonded to the gas permeation suppressing layer (III), etc.) facing the support layer ( ⁇ ).
- the surface of I) is preferably subjected to a surface treatment according to a conventional method in order to improve adhesion.
- a surface treatment method corona discharge treatment in air, corona discharge treatment in the presence of an organic compound, plasma discharge treatment in the presence of an organic compound, inert gas, polymerizable unsaturated A discharge treatment or the like in a mixed gas composed of a compound gas and a hydrocarbon oxide gas is applied, and a corona discharge treatment in air is particularly preferable.
- the plastic support layer ( ⁇ ) in the release film of the present invention is a layer that provides the necessary rigidity and strength to the release film by laminating the release layer (I) and supporting it. Further, the release layer (I) can be used on the support layer to reduce the amount of expensive ETFE used.
- the resin for forming such a plastic support layer (II) is not particularly limited. However, those used for general release films are preferably applied, for example, polyester resins such as polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, 6_nylon, 6, 6_nylon, 12— Polyamide such as nylon, polyimide, polyamideimide, high density polyethylene, polypropylene such as polypropylene, talyl resin, polycarbonate, polyethersulfone, polyetherimide, polyphenylene sulfide, ethylene Z butyl alcohol copolymer, etc. It is done. Of these, polyethylene terephthalate, which is preferred for polyester resins, is even more preferred. These may be either stretched or unstretched films.
- polyester resins such as polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, 6_nylon, 6, 6_nylon, 12— Polyamide such as nylon, polyimide,
- the strength at 200% elongation at 170 ° C of the plastic support layer (II) is preferably IMPa to 10 OMPa. If the strength of the support layer is too high, the release film will not be sufficiently stretched, so there will be a gap between the vacuum-adsorbed release film and the mold, such as when using a mold with large irregularities. This causes breakage of the release film and resin leakage.
- the resin of the plastic support layer oozes out of the release film due to the sealing resin pressure or the like, which causes the device to be contaminated. If the plastic support layer has the above-mentioned strength when stretched, the release film is preferable because it is excellent in mold followability to molds that are soft at high temperatures and have large irregularities.
- an ethylene / bule alcohol copolymer is used as the plastic support layer (II). Resin power, etc., preferably composed.
- the thickness of the plastic film or plastic sheet constituting the plastic support layer ( ⁇ ) is not particularly limited, but is usually:! To 300 x m, preferably 6 to 200 x m.
- a gas permeation suppression layer ( ⁇ ) made of metal or metal oxide is formed between the release layer (I) and the plastic support layer (II). It is characterized by being.
- the metal forming the gas permeation suppression layer (III) include aluminum, tin, chromium, and stainless steel, and examples of the metal oxide include aluminum oxide, silicon oxide, magnesium oxide, and zirconium oxide. Can be mentioned. Of these, aluminum oxide, silicon oxide, and magnesium oxide are preferable, and aluminum oxide and silicon oxide are more preferable.
- the release film is preferable because it has excellent gas barrier properties and remarkably little mold contamination in the semiconductor resin molding process.
- the gas permeation suppression layer (III) made of these metal oxides for example, as shown in Fig. 2, vacuum deposition, sputtering, Formed by conventional thin film forming means such as chemical vapor deposition (CVD) and ion plating, and then ETFE resin film as the release layer (I) is preferably dry laminated via an adhesive. It is desirable to bond them by means of heat curing, UV curing, etc., and laminate them to form a release film. It can also be done by dry laminating a metal foil such as aluminum on the support layer.
- CVD chemical vapor deposition
- ETFE resin film as the release layer (I) is preferably dry laminated via an adhesive. It is desirable to bond them by means of heat curing, UV curing, etc., and laminate them to form a release film. It can also be done by dry laminating a metal foil such as aluminum on the support layer.
- the thickness of the gas permeation suppression layer (III) made of a metal oxide is usually:! To lOOnm, preferably 5 to 50nm, more preferably 10 to 30nm. If the thickness is smaller than this, the gas permeation suppressing effect is not sufficiently achieved, and even if the thickness exceeds this, further gas suppressing effect is not achieved, and the handling property as a release film is deteriorated, which is not preferable. .
- a resin protective layer (soot) for protection from external impact or the like is formed on the gas permeation suppression layer (III) made of metal or metal oxide. is there.
- the resin protective layer ( ⁇ ') is applied and printed on the gas permeation suppression layer ( ⁇ ) formed on the plastic film as the plastic support layer (II).
- a resin such as melamine resin, acrylic resin, polyvinylidene chloride, ethylene-butyl alcohol resin, and polybulu alcohol alcohol resin may be used as long as it can be formed by coating means such as dipping. It is mentioned as preferable. Of these, melamine resin or melamine resin, which is more preferred than acrylic resin, is the most preferable.
- the resin protective layer ( ⁇ ′) can be formed of amorphous carbon.
- the thickness of the protective layer ( ⁇ ) is usually:! To 1500 nm, preferably 10 to 1000 nm, and more preferably about 50 400.
- Release film of the present invention is a xylene gas permeability 10- 15 (kmol ⁇ m / ( s 'm 2' kPa)) release film for the gas barrier semiconductor resin mold is less than the 170 ° C.
- the gas permeability of the release film is preferably evaluated as the permeability to the film film of a low-viscosity material or the like from an epoxy resin or the like that is a mold resin.
- the force S evaluated by the film permeability of carbon dioxide gas, and the low-viscosity substance and carbon dioxide gas are significantly different as chemical substances. The correlation was not sufficient.
- the present inventors have found that the film permeability of xylene vapor (gas) at 170 ° C. can be well correlated with the gas permeability of substances derived from epoxy resins and the like.
- the permeability coefficient of xylene gas is a good indicator of the barrier property of organic matter generated by semiconductor resin mold resin such as epoxy resin. The smaller this value, the less mold contamination in the semiconductor resin molding process. I found out to show that.
- the gas permeability of the release film is a specific value, specifically,
- the gas permeability of the release film is such that the communication port (opening surface) between the upper cell and the lower cell is closed by a transmittance measuring film (sample film) as described in the examples below. Introduce xylene gas into the upper cell held at 170 ° C, let the xylene gas pass through the lower cell held in vacuum through the sample film, and change the concentration (pressure) of the permeated xylene gas over time Is calculated from the change in pressure in the steady state as the permeability coefficient of xylene gas in a 170 ° C environment. [0044] (Layer structure of release film)
- the release film of the present invention is basically composed of a release layer (1) / gas permeation suppression layer (m) Z plastic support layer ( ⁇ ) as shown in FIG. Release layer (I)
- gas permeation suppression layer (III) and the resin protective layer ( ⁇ ′) may be laminated in several layers.
- a gas permeation suppression layer (III) and a resin protective layer (I ⁇ ) may be laminated thereon.
- the adhesive forming the adhesive layer may be, for example, isocyanate, polyurethane or polyester.
- the adhesive layer is preferably in the range of 0.:! To 5 x m in terms of dryness, and more preferably in the range of 0.2 to 2 / im.
- the order of lamination is not particularly limited.
- a gas permeation suppression layer ( ⁇ ) is formed on the plastic support layer (II) by means such as vacuum deposition. It is preferable that the release layer (I) is further laminated.
- a resin protective layer (soot) is also preferable to form on the gas permeation suppression layer (III) and then laminate the release layer (I).
- the release film of the present invention it is adsorbed to the mold surface when in use, so that the component close to the mold surface is reduced in order to reduce the migration of the components of the release film to the mold surface.
- a gas permeation suppression layer ( ⁇ ) or the like may be used.
- each layer of the gas barrier release film of the present invention will be described collectively.
- the release layer (I) is usually 3 to 75 xm, preferably 6 to 30 / im.
- the support layer (II) is usually:! To 300 ⁇ m, preferably 6 to 200 ⁇ m, more preferably 10 to 100 ⁇ m.
- the gas permeation suppression layer ( ⁇ ) formed on the plastic support layer is usually 1 to 100 nm, preferably 5 to 50 nm, more preferably 10 to 30 nm.
- the resin protective layer ( ⁇ ) formed on the gas permeation suppression layer (III) or the like is usually 1 to 1500 nm, preferably 10 to 1000 nm, and more preferably about 50 to 400 nm.
- the release layer (I), which is the surface layer, and the plastic support layer may be subjected to a satin finish.
- the arithmetic surface roughness of the surface layer when the satin force is applied is preferably in the range of 0.01 to 3.5 x m, more preferably in the range of 0.15 to 2.5 x m. If the surface roughness is within this range, it is possible to prevent the appearance defect of the molded product, improve the yield, and improve the visibility of the lot number marked on the molded product.
- the release film for a semiconductor mold of the present invention can be used in the same manner as a conventional release film in a resin molding process of a semiconductor element. That is, the semiconductor element to be molded and the release film of the present invention are placed at predetermined positions in the mold, and after clamping, the vacuum release is performed to adsorb the release film to the mold surface. Mold resin may be injection molded between the semiconductor element and the mold release film covering the mold surface. The mold resin after curing and the release film of the present invention are easily released.
- the present invention will be specifically described below with reference to examples, but the technical scope of the present invention is not limited thereto.
- the xylene gas permeability coefficient was measured as follows.
- test temperature was 170 ° C
- sample gas was xylene gas
- high-pressure side pressure was 5 kPa
- permeation diameter of the sample film was 50 mm.
- Xylene gas is introduced into the upper cell maintained at 170 ° C, and the xylene gas is allowed to permeate through the lower cell held in a vacuum through the transmittance measurement film (sample film).
- concentration of the permeated xylene gas The pressure change over time was measured, and the permeability coefficient of xylene gas in a 170 ° C environment was calculated from the pressure change in the steady state.
- a 12 ⁇ m-thick ETFE film (manufactured by Asahi Glass Co., Ltd., trade name: Fullon ETFE) was used as the release layer (I).
- a corona discharge treatment was performed on one side of the ETFE film (surface facing the support layer (adhesion surface)) with a discharge amount of 40 W ⁇ min / m 2 in order to improve adhesion.
- a 12 ⁇ m polyethylene terephthalate film is used as a plastic support layer (II), and alumina is deposited as a metal oxide on one surface thereof to form a gas permeation suppression layer (III).
- a film made by Toppan Printing Co., Ltd., trade name: GX film) on which a resin protective layer ( ⁇ ) was formed was prepared.
- a polyester adhesive (trade name: AG—9014A, manufactured by Asahi Glass Co., Ltd.) is applied on the surface of the resin protective layer ( ⁇ ⁇ ) of the above film (GX film) in terms of a dry film thickness of 0.4 xm. Dry and laminate the release layer (I) facing each other as shown in Fig. 3, and separate the layer structure ((I) / (III ') / (III) / (II)) A mold film (hereinafter referred to as “release film 1”) was obtained.
- a single ETFE film (trade name: Fullon ETFE, manufactured by Asahi Glass Co., Ltd.) having a thickness of 50 zm was used as a release film sample (hereinafter referred to as “release film 2”) as it was.
- release film 3 As a plastic support layer (II), use a 12 ⁇ m ethylene / vinyl alcohol copolymer (made by KURARENE, trade name: EVAL EF-F), and sputter aluminum as a metal on its one side to 10 nm.
- a release film (hereinafter referred to as “release film 3”) was prepared in the same manner as in Example 1 except that the film on which the gas permeation suppression layer (III) was formed was not used and the resin protective layer ( ⁇ ) was not formed.
- the release films 1 and 3 of the present invention are as shown in the 180 ° peel test (N / cm). It is extremely excellent in releasability of the epoxy resin, of course, the xylene gas permeability coefficient 8 X 10- 17 (kmol ⁇ m / (s ⁇ m 2 ⁇ kPa)) or 1 X 10- 16, (kmol ⁇ m / (s ⁇ m 2 ⁇ kP a)), which is sufficiently smaller than the value defined in the present invention. For this reason, in the transfer mold test using the release films 1 and 3, it was shown that even if it was repeated 2,000 times or more, no mold contamination was seen, and an excellent effect was obtained. .
- a release film that has remarkably low gas permeability as compared with the conventional mold resin and that is significantly less contaminated with mold resin, and has release properties for the mold resin. Is provided.
- the gas barrier release film of the present invention by applying the gas barrier release film of the present invention, the number of times the mold can be washed can be remarkably reduced in the resin molding process of the semiconductor with very little mold contamination. Since the production efficiency of resin molds for semiconductor elements can be greatly increased, the industrial applicability is extremely high.
- the release film of the present invention is particularly suitable for semiconductor resin mold applications, but can also be suitably applied to various applications that require releasability.
- the specifications, claims and drawings of Japanese Patent Application No. 2006-120573 filed on April 25, 2006 and Japanese Patent Application No. 2006-191872 filed on July 12, 2006 The entire contents of the abstract are hereby incorporated by reference as disclosure of the specification of the invention.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Laminated Bodies (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008513177A JP5234419B2 (ja) | 2006-04-25 | 2007-04-20 | 半導体樹脂モールド用離型フィルム |
CN2007800140912A CN101427358B (zh) | 2006-04-25 | 2007-04-20 | 半导体树脂模塑用脱模膜 |
EP07742083A EP2012351A4 (en) | 2006-04-25 | 2007-04-20 | CASTING SOLUTION FOR SEMICONDUCTOR RESIN CASTING |
US12/258,520 US20090053528A1 (en) | 2006-04-25 | 2008-10-27 | Release film for semiconductor resin molds |
US12/644,855 US8268218B2 (en) | 2006-04-25 | 2009-12-22 | Release film for semiconductor resin molds |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006-120573 | 2006-04-25 | ||
JP2006120573 | 2006-04-25 | ||
JP2006-191872 | 2006-07-12 | ||
JP2006191872 | 2006-07-12 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/258,520 Continuation US20090053528A1 (en) | 2006-04-25 | 2008-10-27 | Release film for semiconductor resin molds |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2007125834A1 true WO2007125834A1 (ja) | 2007-11-08 |
Family
ID=38655360
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/058648 WO2007125834A1 (ja) | 2006-04-25 | 2007-04-20 | 半導体樹脂モールド用離型フィルム |
Country Status (8)
Country | Link |
---|---|
US (2) | US20090053528A1 (ja) |
EP (1) | EP2012351A4 (ja) |
JP (1) | JP5234419B2 (ja) |
KR (1) | KR20090018032A (ja) |
CN (1) | CN101427358B (ja) |
SG (1) | SG171589A1 (ja) |
TW (1) | TW200804052A (ja) |
WO (1) | WO2007125834A1 (ja) |
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JP2011230320A (ja) * | 2010-04-26 | 2011-11-17 | Dainippon Printing Co Ltd | モールディング成形用離型フィルム及びその製造方法 |
KR20160086323A (ko) | 2013-11-07 | 2016-07-19 | 아사히 가라스 가부시키가이샤 | 이형 필름, 및 반도체 패키지의 제조 방법 |
US9859133B2 (en) | 2013-11-07 | 2018-01-02 | Asahi Glass Company, Limited | Mold release film and process for producing semiconductor package |
DE112014005113B4 (de) | 2013-11-07 | 2024-02-22 | AGC Inc. | Formwerkzeugtrennfilm und Verfahren zur Herstellung eines Halbleitergehäuses |
KR20170086466A (ko) | 2014-11-20 | 2017-07-26 | 아사히 가라스 가부시키가이샤 | 이형 필름, 그 제조 방법 및 반도체 패키지의 제조 방법 |
US10699916B2 (en) | 2014-11-20 | 2020-06-30 | AGC Inc. | Mold release film, process for its production, and process for producing semiconductor package |
JP2019504783A (ja) * | 2016-02-01 | 2019-02-21 | スリーエム イノベイティブ プロパティズ カンパニー | バリア複合体 |
JP2018176695A (ja) * | 2017-04-21 | 2018-11-15 | 三井化学東セロ株式会社 | プロセス用離型フィルム、その用途、及びそれを用いた樹脂封止半導体の製造方法 |
JP2021015913A (ja) * | 2019-07-12 | 2021-02-12 | 味の素株式会社 | プリント配線板の製造方法、及び無機層付き樹脂シート |
JP7088133B2 (ja) | 2019-07-12 | 2022-06-21 | 味の素株式会社 | プリント配線板の製造方法、及び無機層付き樹脂シート |
KR20220072566A (ko) * | 2020-11-25 | 2022-06-02 | 율촌화학 주식회사 | 배리어성이 우수한 알루미늄을 이용한 봉지 접착 필름 및 이를 포함하는 유기발광다이오드 |
KR102496596B1 (ko) * | 2020-11-25 | 2023-02-06 | 엘지디스플레이 주식회사 | 배리어성이 우수한 알루미늄을 이용한 봉지 접착 필름 및 이를 포함하는 유기발광다이오드 |
Also Published As
Publication number | Publication date |
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CN101427358B (zh) | 2012-07-18 |
CN101427358A (zh) | 2009-05-06 |
US8268218B2 (en) | 2012-09-18 |
TW200804052A (en) | 2008-01-16 |
EP2012351A1 (en) | 2009-01-07 |
KR20090018032A (ko) | 2009-02-19 |
JPWO2007125834A1 (ja) | 2009-09-10 |
EP2012351A4 (en) | 2010-12-01 |
SG171589A1 (en) | 2011-06-29 |
US20090053528A1 (en) | 2009-02-26 |
US20100096772A1 (en) | 2010-04-22 |
JP5234419B2 (ja) | 2013-07-10 |
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