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• • H—ELECTRICITY
  • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
  • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
  • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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  • C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
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  • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
  • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
  • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
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  • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
  • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
  • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
  • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
  • C04B2235/3232—Titanium oxides or titanates, e.g. rutile or anatase
  • C04B2235/3234—Titanates, not containing zirconia
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  • C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
  • C04B2235/786—Micrometer sized grains, i.e. from 1 to 100 micron
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  • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
  • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
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  • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
  • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
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  • C04B2235/85—Intergranular or grain boundary phases
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  • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
  • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
  • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
  • C04B2235/963—Surface properties, e.g. surface roughness
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
  • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
  • H01L21/6833—Details of electrostatic chucks

Definitions

• the present invention relates to an electrostatic chuck for adsorbing and fixing an object to be adsorbed such as a semiconductor wafer and a glass substrate for FPD with an electrostatic force.
• an electrostatic chuck in which the volume resistivity of the dielectric is lowered by adding 0.5 to 2 wt% of titanium oxide to alumina ceramic.
• the resistance does not decrease when the content is lower than 0.5 wt%, and that the current flows too much when 2 wt% or more is added.
• titanium oxide precipitates at the grain boundaries of alumina ceramics.
• an additive of at least 0.5% or more is required to lower the volume resistivity, and the amount of additive is large as an electrostatic chuck with severe restrictions on the mixing of impurities into the adsorbed substance.
• Patent Document 1 Japanese Patent No. 3084869
• Patent Document 2 Japanese Patent Laid-Open No. 10-279349
• Patent Document 3 Japanese Patent Laid-Open No. 2004-18296
• Patent Document 4 Japanese Patent Publication No. 6-97675
• Patent Document 5 Japanese Patent Laid-Open No. 11 312729
• the present invention can maintain a smooth surface even after being exposed to plasma. As a result, it is possible to suppress particle contamination with respect to an adsorbent such as a silicon wafer and to have excellent adsorption and desorption characteristics of the adsorbent.
• An electrostatic chuck that can be easily manufactured by low-temperature firing is provided. Means for solving the problem
• alumina 99. 4 wt% or more, Sani ⁇ titanium is greater than 0. 2wt% 0. 6wt% or less, lC lO 11 Q volume resistivity at room temperature
• An electrostatic chuck comprising a dielectric for an electrostatic chuck having a structure in which titanium oxide is impregnated at the grain boundary of cm and alumina particles has been disclosed. As a result, it has become possible to improve the plasma resistance of the electrostatic chuck dielectric and the basic functions of the electrostatic chuck at a high level, and to be manufactured at low cost.
• the reason why the volume resistivity needs to be 10 8 ⁇ : ⁇ ⁇ cm is that the Johnsen-Rahbek effect is used as the attractive force of the electrostatic chuck.
• the Johnsen-Rahbek effect By using the Johnsen-Rahbek effect, a very large attracting force is generated, and as a result, the surface of the electrostatic chuck is provided with a convex portion so that the contact area with the object to be attracted is 1-10. % Can be reduced.
• the attracting force can be exerted even in the contacted portion.
• the area of the convex part is 0.00 with respect to the area of the suction surface. It can be 1% or more and less than 0.5%. Since the temperature of the object to be adsorbed is transferred through the contact portion as the contact area of the convex portion becomes smaller, even if the texture of the convex portion is eroded by plasma, the influence is reduced. Therefore, an electrostatic chuck with little change with time can be realized as a result of increasing plasma resistance and minimizing contact with the object to be adsorbed.
• ts is the time (seconds) until the initial attractive force is 100% and collapses to 2%
• ⁇ r is the relative dielectric constant of the dielectric layer
• d is the thickness (m) of the dielectric layer
• h is the height (m) of the protrusion. If the value of this formula is 0.001 force 0.6 and the height of the convex part is 5 to 15 / zm, the area of the convex part should be 0.001 to 0.5% with respect to the adsorption surface. It is possible to provide an electrostatic chuck that can respond to the voltage marking of the attractive force and has good response to unloading.
• alumina 99. 4 wt% or more, significantly 0. 6 wt% of titanium oxide than 0. 2 wt% or less, Ca ⁇ bulk density is 3. 97 g / cm 3 or more
• An electrostatic chuck including a dielectric for electrostatic chuck having a structure in which volume resistivity is lC lO 11 ⁇ cm at room temperature and titanium oxide is biased at the grain boundary of alumina particles is disclosed.
• this electrostatic chuck has a low porosity of the tissue, and further enables improvement in plasma resistance and a high degree of compatibility between the basic functions of the electrostatic chuck, and can be manufactured at low cost.
• the electrostatic chuck is used at a low temperature of 100 ° C or lower.
• a plurality of convex portions are formed and a dielectric having a smooth surface on which the object to be attracted is placed on the upper surface of the convex portions.
• the ratio of the total area and the area of the dielectric surface is 0.001% or more and less than 0.5%, and the height of the convex part is 5 to 15 m.
• the ratio of the contact area is 0.001% or less, the size per convex portion becomes too fine, and processing becomes difficult. On the other hand, if it exceeds 1%, the influence of erosion on the plasma on the surface of the convex part that comes into contact with the adsorbent cannot be ignored.
• the invention's effect [0019] According to the present invention, a smooth surface can be maintained even after being exposed to plasma. As a result, particle contamination of an adsorbed object such as a silicon wafer can be suppressed, and the adsorbed object can be adsorbed and separated. If an electrostatic chuck that can be easily manufactured by low-temperature firing can be manufactured, there is an effect.
• FIG. 1 is a diagram showing an electrostatic chuck of the present invention.
• FIG. 2 is a diagram showing an equivalent circuit of the electrostatic chuck of the present invention.
• FIG. 3 is an enlarged view of the surface pattern of the electrostatic chuck of the present invention.
• FIG. 4 is an electron micrograph showing the structure of an electrostatic chuck dielectric according to the present invention.
• alumina, titanium oxide, and other transition metal oxides were granulated at a blending ratio shown in Table 1.
• Alumina having an average particle diameter of 0.1 l ⁇ m and a purity of 99.99% or more was prepared. Titanium oxide having a purity of 98% or more was used.
• the above raw materials were mixed and pulverized at a blending ratio shown in Table 1, an acrylic binder was added, and after adjustment, the mixture was granulated with a spray dryer to produce granulated powder.
• the granulated powder was packed into a rubber mold, and then CIP (pressure ltonZcm 2 ) was performed to produce an ingot, which was then processed into a predetermined shape to produce a formed shape. Ion exchange water etc. was used for mixing so that no impurities were mixed.
• the raw processed body was fired in a nitrogen and hydrogen gas reducing atmosphere.
• the firing temperature was 1150 to 1350 ° C.
• the firing time was 1 to 8 hours, and the conditions with the highest bulk density were selected.
• the purpose of reducing firing is to adjust the volume resistivity in order to make the non-stoichiometric composition of titanium oxide.
• the HIP condition was Ar gas 1500 atm, and the temperature was the same as the firing temperature or 30 ° C lower.
• the surface roughness of the ceramics was measured by actually irradiating the plasma. In the initial state, the surface roughness was RaO. 05 m or less.
• Plasma is a reactive ion etching system, etching gas is CF +0, 1000W, plasma discharge for 5 hours
• alumina ceramics produced by a conventional manufacturing method is illustrated.
• the compound 1 is 98 wt% alumina with an average particle size of 0. 0%, titanium oxide 2 wt%, comparative product 2 is alumina 99 wt%, titanium oxide 1 wt%, and the firing temperature is 1580 ° C.
• the surface roughness of Comparative Product 1 was RaO. 23 m in the initial state.
• the surface roughness of Comparative Product 2 was RaO. 2 ⁇ m in the initial state.
• the comparative product is not HIP treated.
• the use of a high-purity, fine-grained alumina raw material having an average particle size of less than 0 and a purity of 99.9% or more lowers the firing temperature to 1300 ° C or lower.
• Titanium oxide titanium does not react with alumina and exists as titanium oxide.
• Aluminum titanate is known to have a relatively high volume resistivity, and in order to reduce the volume resistivity of alumina, the efficiency is worse than that of titanium oxide. Conceivable.
• FIG. 4 shows a SEM photograph of a sample subjected to thermal etching at a temperature lower by about 80 to 150 ° C. than the firing temperature. It can be seen that the structure is such that the titanium oxide (white part of the photograph) is connected to the grain boundary of the alumina particles (black part of the photograph) with an average particle diameter of 2 ⁇ m or less and connected continuously. I helped. It is considered that the volume resistivity can be efficiently reduced by the network formed by this titanium oxide. From the above results, the dielectric resistivity for the electrostatic chuck of the present invention was able to lower the volume resistivity by adding a small amount of acid titanium as compared with the conventional one.
• Titanium oxide is considered to have further improved conductivity because it becomes non-stoichiometrically formed by reduction firing. Thus, it was thought that the volume resistivity could be controlled by a small amount of titanium oxide, and that chemical contamination of silicon wafers and the like could be remarkably suppressed compared to the conventional case.
• the electrostatic chuck When using resist, the electrostatic chuck is 100 considering its heat resistance temperature. It is desirable to use below C.
• the electrical characteristics required for the dielectric material for the electrostatic chuck are desired to be the temperature at which the electrostatic chuck is used, and the volume resistivity is 8 ) 11 ⁇ cm.
• the 10 less than 8 Omega cm lower limit may cause damage to the device too excessive current flowing into ⁇ E c, the upper limit 10 11
• the response to voltage application for wafer adsorption and desorption will decrease.
• the lower limit is desired to be about ⁇ ⁇ ⁇ ⁇ cm.
• the amount of titanium oxide is more than 0.6 wt%, the volume resistivity becomes less than 10 8 ⁇ « ⁇ , and the current flowing into the wafer becomes excessive, which may damage the device. On the other hand, if it is 0.2 wt% or less, the effect S of reducing the volume resistivity due to the titanium oxide additive S becomes small.
• Plasma resistance was evaluated by the change in surface roughness because any substance is etched if the energy of ions in the plasma is excessive.
• the ceramic dielectric according to the present invention has a significantly smaller change in surface roughness than the conventional one. This is presumed that the size of particles that generate dust is small!
• a dielectric for an electrostatic chuck having a smooth surface on which a plurality of convex portions are formed and an object to be adsorbed is placed on the upper surface of the convex portion and having a volume resistivity of 10 9 ⁇ 3 ⁇ cm
• An electrostatic chuck in which the ratio of the total area of the upper surfaces of the convex portions of the electrostatic chuck to the area of the dielectric surface was 0.089% was produced.
• a convex part of ⁇ ⁇ . 25 mm is continuously arranged on each surface of each apex of an equilateral triangle with a side of 8 mm.
• the height of the convex part is 10 m.
• the POPOFF adsorption force was recorded as lOOtorr or more in all samples. In other words, it was found that a practical force was sufficiently obtained to adsorb an adsorbent such as a silicon wafer.

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