JP2007214287A - 静電チャック - Google Patents
静電チャック Download PDFInfo
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- JP2007214287A JP2007214287A JP2006031545A JP2006031545A JP2007214287A JP 2007214287 A JP2007214287 A JP 2007214287A JP 2006031545 A JP2006031545 A JP 2006031545A JP 2006031545 A JP2006031545 A JP 2006031545A JP 2007214287 A JP2007214287 A JP 2007214287A
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- titanium oxide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
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- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
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Abstract
【解決手段】 本発明では、アルミナが99.4wt%以上、酸化チタンが0.2wt%より大きく0.6wt%以下、体積抵抗率が室温において108〜1011Ωcmかつアルミナ粒子の粒界に酸化チタンが偏析した構造の静電チャック用誘電体を備えた静電チャックとした。
【選択図】 図1
Description
このような場合、プラズマ環境下にセラミック組織がさらされた場合、組織が侵食を受け表面粗さが悪くなりその結果、静電チャック表面とウェハ間の接触状態が変化することによる経時変化が生じたり、焼結体から粒子が脱粒しパーティクルとして発塵しLSIの配線間ショートを引き起こすなどの原因となる場合があった。
ts=1.731×10-11×ρ(εr+d/h) (秒)
ここで、tsは初期の吸着力を100%としてそれが2%まで崩壊するまでの時間(秒)、ρは誘電層の体積抵抗率(Ωm)、εrは誘電層の比誘電率、dは誘電層の厚み(m)、hは凸部の高さ(m)である。この式の値が0.001から0.6でかつ凸部の高さが5〜15μmであれば凸部の面積を吸着面に対して0.001〜0.5%にまですることができかつ吸着力の電圧印加、除荷に対する応答性の良い静電チャックとすることができる。
上記の式は図1の等価回路より解析的に計算し〔数1〕から〔数4〕を導出して得られるものである。ここでq1は電荷密度、Sは電極面積、Cは静電容量、Gはコンダクタンス、Vは印加電圧、tは時間(変数)、Tは電圧印加時間である。
上記原料を表1に示す配合比で混合粉砕し、アクリル系バインダーを添加、調整後スプレードライヤーで造粒し顆粒粉を作製した。顆粒粉はゴム型に詰めた後CIP(圧力1ton/cm2)を実施してインゴットを作製し、その後所定の形状に加工し生成形体を作製した。混合にはイオン交換水等を用いなるべく不純物が混入しないようにした。
(焼成)
上記生加工体を窒素、水素ガス還元雰囲気下で焼成した。焼成温度は1150〜1350℃、焼成時間は1〜8時間とし、もっともかさ密度が高い条件を選択した。このとき脱脂のために加湿ガスを使用している。還元焼成を行うのは酸化チタンの非化学量論組成化をねらい、体積抵抗率の調節をねらうためである。
(HIP処理)
さらにHIP処理をおこなった。HIP条件はArガス1500気圧とし、温度は焼成温度と同一または30℃下げた温度とした。
(物性測定)
上記HIP処理により得られたものは焼成かさ密度、焼成体組織SEM観察による平均粒子径測定、体積抵抗率測定、真空中での摩擦力測定、残留時間測定を行った。摩擦力測定および残留時間測定にはセラミックス誘電層の厚みを1mmとした。吸着電圧は200V印加とし、さらに残留時間測定には1分間電圧印可後に電源をオフし、残留する摩擦力の減衰を測定した。被吸着物はシリコンウェハミラー面とした。残留時間は電源オフ後摩擦力が2%にまで減衰する時間を残留時間とした。
また、実際にプラズマを照射しセラミックスの表面粗さ(中心線平均粗さRa)変化を測定した。初期状態では表面粗さはRa0.05μm以下にした。プラズマはリアクティブイオンエッチング装置、エッチングガスはCF4+O2で1000W、5時間プラズマ放電させた。
また、サンプルの一部につき静電チャックの実用的な吸着力の評価として吸着している被吸着体との間にHeガスの圧力を負荷して被吸着体がはがれるときの圧力(POPOFF吸着力)を記録した。このときの吸着電圧は1000Vである。
(比較品)
また比較のため従来の製法によるアルミナセラミックスを例示した。その配合は比較品1が平均粒子径0.5μmのアルミナ98wt%、酸化チタン2wt%、比較品2がアルミナ99wt%、酸化チタン1wt%で、焼成温度は1580℃である。尚、比較品1の表面粗さは初期状態でRa0.23μmであった。比較品2の表面粗さは初期状態でRa0.2μmであった。比較品はHIP処理はしていない。
静電チャック用の誘電体に要求される電気特性は、静電チャックを使用する温度において体積抵抗率が108〜1011Ωcmが望ましい。下限値の108Ωcm未満ではウェハへ流れ込む電流が過大になりすぎデバイスの損傷のおそれがあり、上限値の1011Ωcmより大きいと、ウェハの吸着、脱離の電圧印加に対するレスポンスが低下する。
例えば100℃以下のプロセスエッチングのようなプロセスでは下限値が109〜1011Ωcm程度であることが望ましい。
その結果、本発明によるセラミック誘電体は表面粗さの変化が従来のものに比べ顕著に小さかった。このことは発塵するパーティクルの大きさが小さいことと推定された。
している。凸部の高さは10μmである。
2…凸部底面
3…ガス供給孔
4…リング状凸部(シールリング)
5…凹部(ガス拡散用溝)
6…電極
7…誘電層
8…被吸着体
9…電気的接続手段
10…基盤
11…電源
Claims (5)
- アルミナが99.4wt%以上、酸化チタンが0.2wt%より大きく0.6wt%以下、体積抵抗率が室温において108〜1011Ωcm、かつアルミナ粒子の粒界に酸化チタンが偏析した構造の静電チャック用誘電体を備えたことを特徴とする静電チャック。
- アルミナが99.4wt%以上、酸化チタンが0.2wt%より大きく0.6wt%以下、かさ密度が3.97g/cm3以上、体積抵抗率が室温において108〜1011Ωcm、かつアルミナ粒子の粒界に酸化チタンが偏析した構造の静電チャック用誘電体を備えたことを特徴とする静電チャック。
- 前記アルミナ粒子の粒内および粒界にチタン酸アルミニウム(Al2TiO5)が存在しないことを特徴とする請求項1または2に記載の静電チャック。
- 請求項1乃至3のいずれかに記載の静電チャックであって、100℃以下の低温で使用されることを特徴とする静電チャック。
- 複数の凸部が形成され被吸着体を該凸部上面に載置する平滑な表面を有する誘電体から構成され、前記複数の凸部上面の合計の面積と前記誘電体表面の面積との比率が0.001%以上0.5%未満でありかつ凸部の高さが5〜15μmであることを特徴とする請求項1乃至4のいずれかに記載の静電チャック。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006031545A JP4244229B2 (ja) | 2006-02-08 | 2006-02-08 | 静電チャック |
CN2007800045852A CN101379607B (zh) | 2006-02-08 | 2007-02-08 | 静电卡盘 |
TW096104666A TWI342059B (en) | 2006-02-08 | 2007-02-08 | Electrostatic chuck |
PCT/JP2007/052175 WO2007091619A1 (ja) | 2006-02-08 | 2007-02-08 | 静電チャック |
KR1020087018298A KR100989230B1 (ko) | 2006-02-08 | 2007-02-08 | 정전척 |
US12/086,967 US7907383B2 (en) | 2005-11-15 | 2007-02-08 | Electrostatic chuck |
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006031545A JP4244229B2 (ja) | 2006-02-08 | 2006-02-08 | 静電チャック |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2008201771A Division JP4623159B2 (ja) | 2008-08-05 | 2008-08-05 | 静電チャック |
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Publication Number | Publication Date |
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JP2007214287A true JP2007214287A (ja) | 2007-08-23 |
JP2007214287A5 JP2007214287A5 (ja) | 2008-09-18 |
JP4244229B2 JP4244229B2 (ja) | 2009-03-25 |
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JP2006031545A Active JP4244229B2 (ja) | 2005-11-15 | 2006-02-08 | 静電チャック |
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JP (1) | JP4244229B2 (ja) |
KR (1) | KR100989230B1 (ja) |
CN (1) | CN101379607B (ja) |
TW (1) | TWI342059B (ja) |
WO (1) | WO2007091619A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009004752A (ja) * | 2007-05-18 | 2009-01-08 | Toto Ltd | 静電チャック |
US9130000B2 (en) | 2008-09-30 | 2015-09-08 | Mitsubishi Heavy Industries | Wafer bonding device and wafer bonding method |
US9136031B2 (en) | 2012-04-26 | 2015-09-15 | Ngk Spark Plug Co., Ltd. | Alumina sintered body, member including the same, and semiconductor manufacturing apparatus |
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Publication number | Priority date | Publication date | Assignee | Title |
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KR102119867B1 (ko) * | 2013-10-21 | 2020-06-09 | 주식회사 미코세라믹스 | 정전척 |
CN107663080B (zh) * | 2016-07-27 | 2020-05-08 | 北京华卓精科科技股份有限公司 | 应用于j-r型静电卡盘的氧化铝陶瓷及其制备方法 |
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JPH03204924A (ja) * | 1989-10-30 | 1991-09-06 | Sumitomo Metal Ind Ltd | 試料保持装置 |
JPH09330974A (ja) * | 1996-06-12 | 1997-12-22 | Hitachi Ltd | 静電吸着電極 |
JP4201502B2 (ja) * | 2000-10-11 | 2008-12-24 | 独立行政法人産業技術総合研究所 | 静電チャックおよびその製造方法 |
US6483690B1 (en) * | 2001-06-28 | 2002-11-19 | Lam Research Corporation | Ceramic electrostatic chuck assembly and method of making |
JP2004352572A (ja) * | 2003-05-29 | 2004-12-16 | Kyocera Corp | アルミナセラミックス及びその製造方法 |
TWI274394B (en) * | 2003-11-14 | 2007-02-21 | Advanced Display Proc Eng Co | Electrostatic chuck with support balls as contact plane, substrate support, clamp for substrate fixation, and electrode structure, and fabrication method thereof |
JP4722463B2 (ja) * | 2004-12-03 | 2011-07-13 | 黒崎播磨株式会社 | 静電チャック用誘電体セラミックス及びその製造方法 |
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- 2006-02-08 JP JP2006031545A patent/JP4244229B2/ja active Active
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- 2007-02-08 TW TW096104666A patent/TWI342059B/zh active
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009004752A (ja) * | 2007-05-18 | 2009-01-08 | Toto Ltd | 静電チャック |
US9130000B2 (en) | 2008-09-30 | 2015-09-08 | Mitsubishi Heavy Industries | Wafer bonding device and wafer bonding method |
US9136031B2 (en) | 2012-04-26 | 2015-09-15 | Ngk Spark Plug Co., Ltd. | Alumina sintered body, member including the same, and semiconductor manufacturing apparatus |
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JP4244229B2 (ja) | 2009-03-25 |
CN101379607B (zh) | 2010-04-21 |
WO2007091619A1 (ja) | 2007-08-16 |
TWI342059B (en) | 2011-05-11 |
TW200737398A (en) | 2007-10-01 |
CN101379607A (zh) | 2009-03-04 |
KR100989230B1 (ko) | 2010-10-20 |
KR20080089444A (ko) | 2008-10-06 |
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