JP4244229B2 - 静電チャック - Google Patents

静電チャック Download PDF

Info

Publication number
JP4244229B2
JP4244229B2 JP2006031545A JP2006031545A JP4244229B2 JP 4244229 B2 JP4244229 B2 JP 4244229B2 JP 2006031545 A JP2006031545 A JP 2006031545A JP 2006031545 A JP2006031545 A JP 2006031545A JP 4244229 B2 JP4244229 B2 JP 4244229B2
Authority
JP
Japan
Prior art keywords
electrostatic chuck
titanium oxide
dielectric
alumina
volume resistivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2006031545A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007214287A5 (enrdf_load_stackoverflow
JP2007214287A (ja
Inventor
正美 安藤
淳 宮地
修 岡本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toto Ltd
Original Assignee
Toto Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2006031545A priority Critical patent/JP4244229B2/ja
Application filed by Toto Ltd filed Critical Toto Ltd
Priority to PCT/JP2007/052175 priority patent/WO2007091619A1/ja
Priority to KR1020087018298A priority patent/KR100989230B1/ko
Priority to TW096104666A priority patent/TWI342059B/zh
Priority to CN2007800045852A priority patent/CN101379607B/zh
Priority to US12/086,967 priority patent/US7907383B2/en
Publication of JP2007214287A publication Critical patent/JP2007214287A/ja
Publication of JP2007214287A5 publication Critical patent/JP2007214287A5/ja
Application granted granted Critical
Publication of JP4244229B2 publication Critical patent/JP4244229B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/10Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
    • C04B35/111Fine ceramics
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64Burning or sintering processes
    • C04B35/645Pressure sintering
    • C04B35/6455Hot isostatic pressing
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3232Titanium oxides or titanates, e.g. rutile or anatase
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3232Titanium oxides or titanates, e.g. rutile or anatase
    • C04B2235/3234Titanates, not containing zirconia
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/658Atmosphere during thermal treatment
    • C04B2235/6582Hydrogen containing atmosphere
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74Physical characteristics
    • C04B2235/77Density
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74Physical characteristics
    • C04B2235/78Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
    • C04B2235/786Micrometer sized grains, i.e. from 1 to 100 micron
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/80Phases present in the sintered or melt-cast ceramic products other than the main phase
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/80Phases present in the sintered or melt-cast ceramic products other than the main phase
    • C04B2235/85Intergranular or grain boundary phases
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C04B2235/963Surface properties, e.g. surface roughness
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Jigs For Machine Tools (AREA)
JP2006031545A 2005-11-15 2006-02-08 静電チャック Active JP4244229B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2006031545A JP4244229B2 (ja) 2006-02-08 2006-02-08 静電チャック
KR1020087018298A KR100989230B1 (ko) 2006-02-08 2007-02-08 정전척
TW096104666A TWI342059B (en) 2006-02-08 2007-02-08 Electrostatic chuck
CN2007800045852A CN101379607B (zh) 2006-02-08 2007-02-08 静电卡盘
PCT/JP2007/052175 WO2007091619A1 (ja) 2006-02-08 2007-02-08 静電チャック
US12/086,967 US7907383B2 (en) 2005-11-15 2007-02-08 Electrostatic chuck

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006031545A JP4244229B2 (ja) 2006-02-08 2006-02-08 静電チャック

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008201771A Division JP4623159B2 (ja) 2008-08-05 2008-08-05 静電チャック

Publications (3)

Publication Number Publication Date
JP2007214287A JP2007214287A (ja) 2007-08-23
JP2007214287A5 JP2007214287A5 (enrdf_load_stackoverflow) 2008-09-18
JP4244229B2 true JP4244229B2 (ja) 2009-03-25

Family

ID=38345213

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006031545A Active JP4244229B2 (ja) 2005-11-15 2006-02-08 静電チャック

Country Status (5)

Country Link
JP (1) JP4244229B2 (enrdf_load_stackoverflow)
KR (1) KR100989230B1 (enrdf_load_stackoverflow)
CN (1) CN101379607B (enrdf_load_stackoverflow)
TW (1) TWI342059B (enrdf_load_stackoverflow)
WO (1) WO2007091619A1 (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009004752A (ja) * 2007-05-18 2009-01-08 Toto Ltd 静電チャック
JP4786693B2 (ja) 2008-09-30 2011-10-05 三菱重工業株式会社 ウェハ接合装置およびウェハ接合方法
JP5872998B2 (ja) 2012-04-26 2016-03-01 日本特殊陶業株式会社 アルミナ焼結体、それを備える部材、および半導体製造装置
KR102119867B1 (ko) * 2013-10-21 2020-06-09 주식회사 미코세라믹스 정전척
CN107663080B (zh) * 2016-07-27 2020-05-08 北京华卓精科科技股份有限公司 应用于j-r型静电卡盘的氧化铝陶瓷及其制备方法
JP2022142421A (ja) * 2021-03-16 2022-09-30 株式会社巴川製紙所 静電チャック装置およびその製造方法
JP2022142151A (ja) * 2021-03-16 2022-09-30 株式会社巴川製紙所 セラミック膜およびその製造方法、静電チャック装置およびその製造方法
CN118043292A (zh) * 2021-10-18 2024-05-14 日本特殊陶业株式会社 氧化铝质烧结体和静电卡盘
JP2023128213A (ja) * 2022-03-03 2023-09-14 株式会社巴川製紙所 静電チャック装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03204924A (ja) * 1989-10-30 1991-09-06 Sumitomo Metal Ind Ltd 試料保持装置
JPH09330974A (ja) * 1996-06-12 1997-12-22 Hitachi Ltd 静電吸着電極
JP4201502B2 (ja) * 2000-10-11 2008-12-24 独立行政法人産業技術総合研究所 静電チャックおよびその製造方法
US6483690B1 (en) * 2001-06-28 2002-11-19 Lam Research Corporation Ceramic electrostatic chuck assembly and method of making
JP2004352572A (ja) * 2003-05-29 2004-12-16 Kyocera Corp アルミナセラミックス及びその製造方法
TWI274394B (en) * 2003-11-14 2007-02-21 Advanced Display Proc Eng Co Electrostatic chuck with support balls as contact plane, substrate support, clamp for substrate fixation, and electrode structure, and fabrication method thereof
JP4722463B2 (ja) * 2004-12-03 2011-07-13 黒崎播磨株式会社 静電チャック用誘電体セラミックス及びその製造方法

Also Published As

Publication number Publication date
TWI342059B (en) 2011-05-11
CN101379607B (zh) 2010-04-21
KR100989230B1 (ko) 2010-10-20
TW200737398A (en) 2007-10-01
WO2007091619A1 (ja) 2007-08-16
JP2007214287A (ja) 2007-08-23
KR20080089444A (ko) 2008-10-06
CN101379607A (zh) 2009-03-04

Similar Documents

Publication Publication Date Title
JP4244229B2 (ja) 静電チャック
TWI590374B (zh) Static chuck
US6641939B1 (en) Transition metal oxide doped alumina and methods of making and using
JP5872998B2 (ja) アルミナ焼結体、それを備える部材、および半導体製造装置
KR101933508B1 (ko) 도전성 다공질 세라믹 기판 및 그 제조방법
JP2006332204A (ja) 静電チャック
US7915189B2 (en) Yttrium oxide material, member for semiconductor-manufacturing apparatus, and method for producing yttrium oxide material
WO2020214494A1 (en) High density corrosion resistant layer arrangement for electrostatic chucks
JP4623159B2 (ja) 静電チャック
KR101692219B1 (ko) 진공척용 복합체 및 그 제조방법
JP6052976B2 (ja) 静電チャック誘電体層および静電チャック
JP2006049356A (ja) 静電チャック
US7248457B2 (en) Electrostatic chuck
JP4043219B2 (ja) 静電チャック
JP4722463B2 (ja) 静電チャック用誘電体セラミックス及びその製造方法
JP2009302518A (ja) 静電チャック
JPH09283607A (ja) 静電チャック
JP2010018853A (ja) セラミックス溶射膜及びそれを用いた耐食性部材
JP2008288428A (ja) 静電チャック
JP2007214288A (ja) 静電チャック
US7907383B2 (en) Electrostatic chuck
JP2007326744A (ja) 耐プラズマ性セラミックス部材
JP5192221B2 (ja) セラミックス焼結体及びそれを用いた静電チャック
WO2007055006A1 (ja) 静電チャック
JP3667077B2 (ja) 静電チャック

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080805

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080805

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20080806

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080922

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20081006

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081121

TRDD Decision of grant or rejection written
A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20081210

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20081212

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20081225

R150 Certificate of patent or registration of utility model

Ref document number: 4244229

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120116

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120116

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130116

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130116

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140116

Year of fee payment: 5