Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
  • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
  • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/30—Structure or shape of the active region; Materials used for the active region
  • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
  • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
  • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
  • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Definitions

• the present invention relates to a semiconductor laser device having an infrared laser light emitting element and a red laser light emitting element, and a method for manufacturing the same.
• Patent Document 1 proposes a two-wavelength type semiconductor laser device.
• this semiconductor laser device an infrared laser light emitting element and a red laser light emitting element are arranged side by side on a single substrate.
• This semiconductor laser device has a monolithic structure.
• the infrared laser light emitting element and the red laser light emitting element emit laser beams having different wavelengths.
• An infrared laser light-emitting device is configured by stacking an n-type first lower cladding layer, a first active layer, and a p-type first upper cladding layer.
• the red laser light emitting element is formed by stacking an n-type second lower cladding layer, a second active layer, and a p-type second upper cladding layer.
• the first laminate is formed over the entire top surface of one substrate.
• the first stacked body is formed by stacking an n-type first lower cladding layer, a first active layer, and a p-type first upper cladding layer in this order.
• a portion of the first laminated body where the infrared laser light emitting element is formed is left, and the other portions are removed in the first etching step.
• a portion of the upper surface of the substrate other than the portion where the infrared laser emitting element is formed is exposed.
• a second stacked body is formed on the entire upper surface of the substrate, the portion exposed in the first etching step and the portion where the infrared laser light emitting element is formed.
• the second laminate is formed by laminating an n-type second lower clad layer, a second active layer, and a p-type second upper clad layer in this order. A portion where the red laser light emitting element is formed is left in the second stacked body, and the other portion is removed in the second etching step.
• Patent Document 2 as another prior art proposes a semiconductor laser device having another configuration.
• Other configurations of the semiconductor laser device include a red laser light emitting element substrate and a second lower layer laser diode.
• a raised layer (a height adjusting buffer layer) is formed between the lad layer and the lad layer.
• the semiconductor laser device described in Patent Document 2 is different from the semiconductor laser device described in Patent Document 1.
• the first laminate is formed over the entire top surface of one substrate.
• the first laminate is formed by laminating an n-type first lower cladding layer, a first active layer, and a P-type first upper cladding layer in this order.
• a portion of the first laminated body where the infrared laser light emitting element is formed is left, and the other portions are removed in the first etching step.
• a portion of the upper surface of the substrate other than the portion where the infrared laser light emitting element is formed is exposed.
• a raised layer (a height adjusting buffer layer) is formed on a portion of the upper surface of the substrate exposed in the first etching step.
• a second laminate is formed on the entire portion where the raised layer and the infrared laser light emitting element are formed.
• the second stacked body is formed by stacking an n-type second lower cladding layer, a second active layer, and a p-type second upper cladding layer in this order. A portion of the second stacked body where the red laser light emitting element is formed is left, and the other portions are removed in the second etching step.
• Patent Document 1 Japanese Patent Application Laid-Open No. 2001-244569
• Patent Document 2 Japanese Patent Laid-Open No. 2001-320132
• the first active layer of the infrared laser light emitting element and the second active layer of the red laser light emitting element are formed on the substrate for reasons such as assembly or optical system.
• the height position from the upper surface should be substantially aligned.
• the second lower clad layer of the red laser light-emitting element is different in composition from the first lower clad layer of the infrared laser light-emitting element. Therefore, the thickness of the second lower cladding layer can be made much thinner than that of the first lower cladding layer.
• the thickness of the second lower cladding layer of the second stacked body is made the same as the thickness of the first lower cladding layer of the first stacked body.
• the height positions of the first active layer and the second active layer are substantially aligned.
• the thickness of the second stacked body can be reduced as described above.
• the thickness of the second lower cladding layer is increased. Yes. Therefore, the second lower cladding layer A long time is required for the film-forming process for growing the film.
• a raised layer is formed in a portion exposed in the first etching step, and a second lower cladding layer is formed on the upper surface of the raised layer. Therefore, the thickness of the second lower cladding layer can be reduced by the thickness of the raised layer. Further, the height positions of the first active layer and the second active layer can be substantially aligned by adjusting the thickness of the second lower cladding layer.
• an object of the present invention is to provide a semiconductor laser light emitting device and a method for manufacturing the same that can solve the above-mentioned problems.
• the semiconductor laser light emitting device provided by the first aspect of the present invention is formed by laminating a first lower cladding layer, a first active layer, and a first upper cladding layer on the upper surface of one substrate.
• a semiconductor laser light emitting device having an infrared laser light emitting element for infrared and a red laser light emitting element for red formed by laminating a second lower cladding layer, a second active layer, and a second upper cladding layer
• the first lower cladding layer includes a third lower cladding layer formed over the entire upper surface of the substrate, an etching stop layer formed over the entire upper surface of the third lower cladding layer, and an upper surface of the etching stop layer.
• a top are as characterized by being formed in a region other than the region where the infrared laser light emitting element is formed.
• the first first active layer and the second active layer include the third lower cladding layer and the third lower cladding layer. And the height position from the upper surface of the substrate is made substantially the same by the etching stop layer.
• the third lower cladding layer and the fourth lower cladding layer are formed of n-type AlGaAs, formed of the etching stop layer force nGaP, and the first active layer is formed of AlGaAs.
• the second lower cladding layer is formed of n-type InGaAlP, and the second active layer is formed of InGaP.
• a method of manufacturing a semiconductor laser light emitting device is provided.
• This manufacturing method is a manufacturing method for manufacturing a semiconductor laser light emitting device in which an infrared laser light emitting element and a red laser light emitting element are provided on the upper surface of one substrate.
• FIG. 1 is a longitudinal sectional front view showing a semiconductor laser light emitting device according to a first embodiment of the present invention.
• FIG. 2 is a diagram showing a manufacturing method of the semiconductor laser light emitting device shown in FIG.
• FIG. 3 is a diagram showing a manufacturing method of the semiconductor laser light emitting device shown in FIG. 1.
• FIG. 4 is a diagram showing a manufacturing method of the semiconductor laser light emitting device shown in FIG. 1.
• FIG. 5 is a diagram showing a manufacturing method of the semiconductor laser light emitting device shown in FIG. 1.
• 6 is a diagram showing a manufacturing method of the semiconductor laser light emitting device shown in FIG. 1.
• FIG. 7 is a diagram showing a manufacturing method of the semiconductor laser light emitting device shown in FIG. 1.
• FIG. 8 is a diagram showing a manufacturing method of the semiconductor laser light emitting device shown in FIG. 1.
• FIG. 9 is a diagram showing a manufacturing method of the semiconductor laser light emitting device shown in FIG. 1.
• FIG. 10 is a longitudinal sectional front view showing a semiconductor laser light emitting device according to a second embodiment of the present invention.
• FIG. 1 is a longitudinal front view showing a semiconductor laser light emitting device according to a first embodiment of the present invention.
• the semiconductor laser light emitting device 1 includes a substrate 2, an infrared laser light emitting element 3 for infrared, and a red laser light emitting element 4 for red.
• the infrared laser light emitting element 3 and the red laser light emitting element 4 emit laser beams having different wavelengths.
• the substrate 2 is made of, for example, n-type GaAs.
• the infrared laser light emitting element 3 and the red laser light emitting element 4 are provided on the upper surface of the substrate 2.
• the infrared laser light emitting element 3 includes a first lower cladding layer 11, a first active layer 12, a first upper cladding layer 13, a first ridge 14, a first buried layer 15, and a first 1 contact layer 16 is formed.
• the first lower cladding layer 11 is composed of a third cladding layer 17, an etching stop layer 18, and a fourth cladding layer 19.
• the third lower cladding layer 17 is formed over the entire upper surface of the substrate 2.
• An etching stop layer 18 is formed on the upper surface of the third lower cladding layer 17.
• the etching stop layer 18 is formed to be relatively thin.
• a fourth lower cladding layer 19 is formed on the upper surface of the etching stop layer 18 in a region where the infrared laser light emitting element 3 is formed.
• the third cladding layer 17 and the fourth cladding layer 19 are made of, for example, n-type AlGaAs.
• the etching stop layer 18 is made of, for example, InGaP.
• a first active layer 12 is formed on the upper surface of the fourth lower cladding layer 19.
• the first active layer 12 is made of, for example, AlGaAs having an oscillation wavelength of 750 to 850 nm.
• a first upper cladding layer 13 is formed on the upper surface of the first active layer 12.
• the first upper cladding layer 13 is made of, for example, p-type AlGaAs.
• a first ridge 14 is formed at the center of the upper surface of the first upper cladding layer 13.
• a first buried layer 15 is formed on the upper surface of the first upper cladding layer 13 and around the first ridge 14.
• the first buried layer 15 is made of, for example, n-type AlGaAs.
• a first contact layer 16 is formed on the upper surface of the first buried layer 15.
• the first contact layer 16 is made of, for example, p-type Ga As.
• the red laser light-emitting element 4 includes a second lower cladding layer 21, a second active layer 22, a second upper cladding layer 23, a second ridge 24, a second buried layer 25, and a second The contact layer 26 is used.
• the second lower cladding layer 21 is formed on the upper surface of the etching stop layer 18.
• the second lower cladding layer 21 also has, for example, an n-type InGaAlP force.
• a second active layer 22 is formed on the upper surface of the second lower cladding layer 21.
• the second active layer 22 also has, for example, an InGaP force having an oscillation wavelength of 635 to 680 nm.
• a second upper clad layer 23 is formed on the upper surface of the second active layer 22.
• the second upper cladding layer 23 also has a p-type InGaAlP force, for example.
• a second ridge 24 is formed at the center of the upper surface of the second upper clad layer 23.
• a second buried layer 25 is formed on the upper surface of the second upper cladding layer 23 and around the second ridge 24.
• the second buried layer 25 also has, for example, n-type ⁇ or n-type InGaAlP force.
• a second contact layer 26 is formed on the upper surface of the second buried layer 25.
• the second contact layer 26 is made of, for example, p-type GaAs.
• the third lower clad layer 17 of the first lower clad layer 11 constituting a part of the infrared laser light emitting element 3 is formed over the entire upper surface of the substrate 2. ing.
• the etching stop layer 18 is formed over the entire upper surface of the third lower cladding layer 17.
• a fourth lower cladding layer 19 constituting the infrared laser light emitting element 3 is formed on the upper surface of the etching stop layer 18, and a second lower cladding layer 21 constituting the red laser light emitting element 4 is formed.
• the second lower cladding layer 21 is provided on the substrate 2 via the etching stop layer 18 and the third lower cladding layer 17.
• the first active layer 12 of the infrared laser light-emitting element 3 and the second active layer 22 of the red laser light-emitting element 4 can be surely aligned at the same height from the top surface of the substrate 2.
• the second lower cladding layer 21 is shaped.
• the partial force of the etching stop layer 18 and the third lower clad layer 17 is achieved as in the raised layer in the semiconductor laser light emitting device described in Patent Document 2.
• the etching stop layer 18 has a band cap larger than that of the first active layer 12. Therefore, the absorption and loss of infrared light by the etching stop layer 18 is small.
• the third lower cladding layer 17 has a band cap larger than that of the second active layer 22. Therefore, the red light absorption / loss by the third lower cladding layer 17 is small. Therefore, the infrared laser light-emitting element 3 and the red laser light-emitting element 4 can obtain high luminance.
• the first epitaxy process for forming the first stacked body 5 is performed.
• a third lower cladding layer 17 of the first lower cladding layer 11 is formed over the entire upper surface of the substrate 2.
• An etching stop layer 18 is formed on the upper surface of the third lower cladding layer 17.
• a fourth lower cladding layer 19 is formed on the upper surface of the etching stop layer 18.
• a first active layer 12 is formed on the fourth lower cladding layer 19.
• a first upper cladding layer 13 is formed on the upper surface of the first active layer 12.
• the etching stop layer 18 is formed by stopping the supply of A1 and As and supplying In and P for a predetermined time. Thereafter, the supply of In and P is stopped and A1 and As are supplied again to form a fourth lower cladding layer 19 by growth.
• the first lower cladding layer 11 is a raw material in the middle of the film forming process to be formed.
• the etching stop layer 18 alone can be formed without introducing a film forming step for forming it separately. Therefore, it can contribute to the reduction of manufacturing cost.
• the etching stop layer 18 can also be formed by growing the third lower cladding layer 17 and then changing the mixing ratio of the film forming raw materials for a predetermined time.
• the process proceeds to the first etching step.
• the portion of the first laminate 5 that masks the portion that becomes the infrared laser light-emitting element 3 is etched, and the portion of the first laminate 5 other than the portion that becomes the infrared laser light-emitting device 3 is etched. Remove with solution.
• the unmasked portion of the first laminate 5 and the upper portion of the etching stop layer 18 are masked in the first laminate 5 as shown in FIG.
• the removed portion is removed.
• a portion that becomes the infrared laser light emitting element 3 can be formed in a state in which the third lower cladding layer 17 is left on the entire upper surface of the substrate 2.
• the etching stop layer 18 is exposed in a region where the red laser light emitting element 4 is formed.
• the etching stop layer 18 is formed of a material that does not contain A1 (aluminum) such as InGaP, for example. As a result, it is possible to reliably suppress the formation of a metal oxide film such as A1 (aluminum) on the surface of the etching stop layer 18 exposed in the first etching step.
• the process proceeds to a second epitaxial process for forming the second stacked body 6.
• the second lower cladding layer 21 is formed over the portion that becomes the infrared laser light emitting element 3 and the entire upper surface of the exposed etching stop layer 18.
• a second active layer 22 is formed on the upper surface of the second lower cladding layer 21.
• a second upper clad layer 23 is formed on the upper surface of the second active layer 22.
• the process proceeds to the second etching process.
• the portion of the second laminate 6 that masks the red laser light emitting element 4 is masked, and the portion of the second laminate 6 other than the portion that becomes the red laser light emitting element 4 is etched with the etching solution. Remove with.
• a second ridge 24 is formed on the upper surface of the second upper clad layer 23.
• a third epitaxy process for forming the second buried layer 25 is performed.
• a first ridge 14 is formed on the upper surface of the first upper cladding layer 13.
• the fourth epitaxy process for forming the first buried layer 15 is performed.
• a fifth epitaxial process is performed in which the first contact layer 16 and the second contact layer 26 are formed on the upper surfaces of the first buried layer 15 and the second buried layer 25, respectively. Through these steps, the semiconductor laser light emitting device 1 having the structure shown in FIG. 1 is manufactured.
• FIG. 10 is a longitudinal front view showing a semiconductor laser light emitting device according to the second embodiment of the present invention.
• the semiconductor laser light emitting device 1A according to the second embodiment is different from the semiconductor laser light emitting device 1 of the first embodiment in that the first upper flood layer 13 and the first buried layer 15 of the infrared laser light emitting element 3, and
• the configurations of the second upper flood layer 23 and the second buried layer 25 (see FIG. 1) of the red laser light emitting element 4 are different.
• members having the same reference numerals as those in FIG. 1 have the same functions.
• the first buried layer 31 is formed on the upper surface of the first active layer 12.
• the first buried layer 31 is made of, for example, n-type AlGaAs.
• a first upper cladding layer 32 is formed on the upper surface of the first buried layer 31.
• the first upper cladding layer 32 is made of, for example, p-type AlGaAs.
• the first upper cladding layer 32 has a first ridge 33 in the center of the bottom surface. It is made. The first upper cladding layer 32 is in contact with the first active layer 12 through the first ridge 33.
• a second embedded layer 34 is formed on the upper surface of the second active layer 22.
• the second buried layer 34 also has, for example, n-type ⁇ or n-type InGaAlP force.
• a second upper cladding layer 35 is formed on the upper surface of the second buried layer 34.
• the second upper cladding layer 35 is made of, for example, p-type InGaAlP.
• the second upper clad layer 35 has a second ridge 36 formed at the center of the lower surface thereof. The second upper cladding layer 35 is in contact with the second active layer 22 through the second ridge 36.
• the semiconductor laser light emitting device 1A according to the second embodiment since the third lower cladding layer 17 and the etching stop layer 18 are formed over the entire upper surface of the substrate 2, the semiconductor laser light emitting device according to the first embodiment Has the same effect as 1.

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• General Physics & Mathematics (AREA)
• Electromagnetism (AREA)
• Optics & Photonics (AREA)
• Geometry (AREA)
• Semiconductor Lasers (AREA)

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• 2005
  • 2005-10-21 JP JP2005307194A patent/JP5013698B2/ja not_active Expired - Lifetime
• 2006
  • 2006-10-16 US US12/083,913 patent/US7860138B2/en active Active
  • 2006-10-16 KR KR1020087010171A patent/KR101006267B1/ko not_active Expired - Fee Related
  • 2006-10-16 CN CN2006800389155A patent/CN101292402B/zh active Active
  • 2006-10-16 WO PCT/JP2006/320538 patent/WO2007046317A1/ja not_active Ceased
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• 2010
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