TWI310255B - - Google Patents

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Publication number
TWI310255B
TWI310255B TW095138591A TW95138591A TWI310255B TW I310255 B TWI310255 B TW I310255B TW 095138591 A TW095138591 A TW 095138591A TW 95138591 A TW95138591 A TW 95138591A TW I310255 B TWI310255 B TW I310255B
Authority
TW
Taiwan
Prior art keywords
layer
cladding layer
laser light
lower cladding
emitting device
Prior art date
Application number
TW095138591A
Other languages
English (en)
Chinese (zh)
Other versions
TW200721619A (en
Inventor
Tsuguki Noma
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of TW200721619A publication Critical patent/TW200721619A/zh
Application granted granted Critical
Publication of TWI310255B publication Critical patent/TWI310255B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
TW095138591A 2005-10-21 2006-10-19 Semiconductor laser light emitting device and method for manufacturing the same TW200721619A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005307194A JP5013698B2 (ja) 2005-10-21 2005-10-21 ２波長型半導体レーザ発光装置及びその製造方法

Publications (2)

Publication Number Publication Date
TW200721619A TW200721619A (en) 2007-06-01
TWI310255B true TWI310255B (https=) 2009-05-21

Family

ID=37962411

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095138591A TW200721619A (en) 2005-10-21 2006-10-19 Semiconductor laser light emitting device and method for manufacturing the same

Country Status (6)

Country Link
US (2) US7860138B2 (https=)
JP (1) JP5013698B2 (https=)
KR (1) KR101006267B1 (https=)
CN (1) CN101292402B (https=)
TW (1) TW200721619A (https=)
WO (1) WO2007046317A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102204040B (zh) * 2008-10-31 2013-05-29 奥普拓能量株式会社 半导体激光元件
US9865772B2 (en) 2015-01-06 2018-01-09 Apple Inc. LED structures for reduced non-radiative sidewall recombination
US12489274B2 (en) * 2020-01-22 2025-12-02 Mitsubishi Electric Corporation Semiconductor device and method for manufacturing semiconductor device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4961197A (en) * 1988-09-07 1990-10-02 Hitachi, Ltd. Semiconductor laser device
JPH0590699A (ja) * 1991-09-27 1993-04-09 Olympus Optical Co Ltd 多波長半導体レ−ザ装置の製造方法
US5396508A (en) 1992-09-22 1995-03-07 Xerox Corporation Polarization switchable quantum well laser
US5412678A (en) * 1992-09-22 1995-05-02 Xerox Corporation Multi-beam, orthogonally-polarized emitting monolithic quantum well lasers
JPH1098234A (ja) * 1996-09-25 1998-04-14 Mitsubishi Electric Corp 半導体レーザ，及びその製造方法
JP2000307191A (ja) * 1999-04-22 2000-11-02 Victor Co Of Japan Ltd 半導体レ−ザ装置の製造方法
US6400743B1 (en) * 1999-08-05 2002-06-04 Fuji Photo Film Co., Ltd. High-power semiconductor laser device having current confinement structure and index-guided structure
JP3950590B2 (ja) * 1999-08-31 2007-08-01 ローム株式会社 半導体レーザおよびその製法
US6813290B1 (en) * 1999-11-25 2004-11-02 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and method for fabricating the same
JP3971566B2 (ja) * 1999-11-25 2007-09-05 松下電器産業株式会社 半導体レーザ素子及びその製造方法
US6396508B1 (en) * 1999-12-02 2002-05-28 Matsushita Electronics Corp. Dynamic low-level enhancement and reduction of moving picture disturbance for a digital display
JP3971581B2 (ja) 2000-02-29 2007-09-05 松下電器産業株式会社 半導体レーザ素子アレイ及びその製造方法
US6546035B2 (en) 2000-02-29 2003-04-08 Matsushita Electric Industrial Co., Ltd. Semiconductor laser diode array and method of fabricating the same
JP2001244569A (ja) 2000-03-01 2001-09-07 Sony Corp 半導体レーザ発光装置の製造方法
JP2002368335A (ja) * 2001-06-05 2002-12-20 Ricoh Co Ltd 半導体レーザ素子およびその作製方法および半導体レーザアレイおよび光通信システムおよび光インターコネクションシステムおよび光ピックアップシステムおよび電子写真システム
JP2004186259A (ja) * 2002-11-29 2004-07-02 Toshiba Corp 半導体レーザ素子、その製造方法、および多波長集積化半導体レーザ装置
JP4326297B2 (ja) * 2003-09-30 2009-09-02 シャープ株式会社 モノリシック多波長レーザ素子およびその製造方法

Also Published As

Publication number Publication date
JP5013698B2 (ja) 2012-08-29
CN101292402A (zh) 2008-10-22
WO2007046317A1 (ja) 2007-04-26
JP2007115974A (ja) 2007-05-10
US20090168824A1 (en) 2009-07-02
TW200721619A (en) 2007-06-01
US8102892B2 (en) 2012-01-24
CN101292402B (zh) 2010-05-19
KR101006267B1 (ko) 2011-01-06
US7860138B2 (en) 2010-12-28
US20110064104A1 (en) 2011-03-17
KR20080061384A (ko) 2008-07-02

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees