JP5013698B2 - ２波長型半導体レーザ発光装置及びその製造方法 - Google Patents

２波長型半導体レーザ発光装置及びその製造方法 Download PDF

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Publication number
JP5013698B2
JP5013698B2 JP2005307194A JP2005307194A JP5013698B2 JP 5013698 B2 JP5013698 B2 JP 5013698B2 JP 2005307194 A JP2005307194 A JP 2005307194A JP 2005307194 A JP2005307194 A JP 2005307194A JP 5013698 B2 JP5013698 B2 JP 5013698B2
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JP
Japan
Prior art keywords
layer
laser light
light emitting
emitting device
infrared
Prior art date
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Expired - Lifetime
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JP2005307194A
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English (en)
Japanese (ja)
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JP2007115974A (ja
Inventor
亜樹 野間
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
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Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2005307194A priority Critical patent/JP5013698B2/ja
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to US12/083,913 priority patent/US7860138B2/en
Priority to CN2006800389155A priority patent/CN101292402B/zh
Priority to KR1020087010171A priority patent/KR101006267B1/ko
Priority to PCT/JP2006/320538 priority patent/WO2007046317A1/ja
Priority to TW095138591A priority patent/TW200721619A/zh
Publication of JP2007115974A publication Critical patent/JP2007115974A/ja
Priority to US12/949,327 priority patent/US8102892B2/en
Application granted granted Critical
Publication of JP5013698B2 publication Critical patent/JP5013698B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2005307194A 2005-10-21 2005-10-21 ２波長型半導体レーザ発光装置及びその製造方法 Expired - Lifetime JP5013698B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2005307194A JP5013698B2 (ja) 2005-10-21 2005-10-21 ２波長型半導体レーザ発光装置及びその製造方法
CN2006800389155A CN101292402B (zh) 2005-10-21 2006-10-16 半导体激光发光装置及其制造方法
KR1020087010171A KR101006267B1 (ko) 2005-10-21 2006-10-16 반도체 레이저 발광 장치 및 그 제조 방법
PCT/JP2006/320538 WO2007046317A1 (ja) 2005-10-21 2006-10-16 半導体レーザ発光装置及びその製造方法
US12/083,913 US7860138B2 (en) 2005-10-21 2006-10-16 Semiconductor laser light emitting device and method for manufacturing same
TW095138591A TW200721619A (en) 2005-10-21 2006-10-19 Semiconductor laser light emitting device and method for manufacturing the same
US12/949,327 US8102892B2 (en) 2005-10-21 2010-11-18 Semiconductor laser light emitting device and method for manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005307194A JP5013698B2 (ja) 2005-10-21 2005-10-21 ２波長型半導体レーザ発光装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2007115974A JP2007115974A (ja) 2007-05-10
JP5013698B2 true JP5013698B2 (ja) 2012-08-29

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JP2005307194A Expired - Lifetime JP5013698B2 (ja) 2005-10-21 2005-10-21 ２波長型半導体レーザ発光装置及びその製造方法

Country Status (6)

Country Link
US (2) US7860138B2 (https=)
JP (1) JP5013698B2 (https=)
KR (1) KR101006267B1 (https=)
CN (1) CN101292402B (https=)
TW (1) TW200721619A (https=)
WO (1) WO2007046317A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102204040B (zh) * 2008-10-31 2013-05-29 奥普拓能量株式会社 半导体激光元件
US9865772B2 (en) 2015-01-06 2018-01-09 Apple Inc. LED structures for reduced non-radiative sidewall recombination
US12489274B2 (en) * 2020-01-22 2025-12-02 Mitsubishi Electric Corporation Semiconductor device and method for manufacturing semiconductor device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4961197A (en) * 1988-09-07 1990-10-02 Hitachi, Ltd. Semiconductor laser device
JPH0590699A (ja) * 1991-09-27 1993-04-09 Olympus Optical Co Ltd 多波長半導体レ−ザ装置の製造方法
US5396508A (en) 1992-09-22 1995-03-07 Xerox Corporation Polarization switchable quantum well laser
US5412678A (en) * 1992-09-22 1995-05-02 Xerox Corporation Multi-beam, orthogonally-polarized emitting monolithic quantum well lasers
JPH1098234A (ja) * 1996-09-25 1998-04-14 Mitsubishi Electric Corp 半導体レーザ，及びその製造方法
JP2000307191A (ja) * 1999-04-22 2000-11-02 Victor Co Of Japan Ltd 半導体レ−ザ装置の製造方法
US6400743B1 (en) * 1999-08-05 2002-06-04 Fuji Photo Film Co., Ltd. High-power semiconductor laser device having current confinement structure and index-guided structure
JP3950590B2 (ja) * 1999-08-31 2007-08-01 ローム株式会社 半導体レーザおよびその製法
US6813290B1 (en) * 1999-11-25 2004-11-02 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and method for fabricating the same
JP3971566B2 (ja) * 1999-11-25 2007-09-05 松下電器産業株式会社 半導体レーザ素子及びその製造方法
US6396508B1 (en) * 1999-12-02 2002-05-28 Matsushita Electronics Corp. Dynamic low-level enhancement and reduction of moving picture disturbance for a digital display
JP3971581B2 (ja) 2000-02-29 2007-09-05 松下電器産業株式会社 半導体レーザ素子アレイ及びその製造方法
US6546035B2 (en) 2000-02-29 2003-04-08 Matsushita Electric Industrial Co., Ltd. Semiconductor laser diode array and method of fabricating the same
JP2001244569A (ja) 2000-03-01 2001-09-07 Sony Corp 半導体レーザ発光装置の製造方法
JP2002368335A (ja) * 2001-06-05 2002-12-20 Ricoh Co Ltd 半導体レーザ素子およびその作製方法および半導体レーザアレイおよび光通信システムおよび光インターコネクションシステムおよび光ピックアップシステムおよび電子写真システム
JP2004186259A (ja) * 2002-11-29 2004-07-02 Toshiba Corp 半導体レーザ素子、その製造方法、および多波長集積化半導体レーザ装置
JP4326297B2 (ja) * 2003-09-30 2009-09-02 シャープ株式会社 モノリシック多波長レーザ素子およびその製造方法

Also Published As

Publication number Publication date
TWI310255B (https=) 2009-05-21
CN101292402A (zh) 2008-10-22
WO2007046317A1 (ja) 2007-04-26
JP2007115974A (ja) 2007-05-10
US20090168824A1 (en) 2009-07-02
TW200721619A (en) 2007-06-01
US8102892B2 (en) 2012-01-24
CN101292402B (zh) 2010-05-19
KR101006267B1 (ko) 2011-01-06
US7860138B2 (en) 2010-12-28
US20110064104A1 (en) 2011-03-17
KR20080061384A (ko) 2008-07-02

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