CN101292402B - 半导体激光发光装置及其制造方法 - Google Patents

半导体激光发光装置及其制造方法 Download PDF

Info

Publication number
CN101292402B
CN101292402B CN2006800389155A CN200680038915A CN101292402B CN 101292402 B CN101292402 B CN 101292402B CN 2006800389155 A CN2006800389155 A CN 2006800389155A CN 200680038915 A CN200680038915 A CN 200680038915A CN 101292402 B CN101292402 B CN 101292402B
Authority
CN
China
Prior art keywords
laser light
layer
covering
lower floor
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2006800389155A
Other languages
English (en)
Chinese (zh)
Other versions
CN101292402A (zh
Inventor
野间亚树
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of CN101292402A publication Critical patent/CN101292402A/zh
Application granted granted Critical
Publication of CN101292402B publication Critical patent/CN101292402B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
CN2006800389155A 2005-10-21 2006-10-16 半导体激光发光装置及其制造方法 Active CN101292402B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005307194A JP5013698B2 (ja) 2005-10-21 2005-10-21 ２波長型半導体レーザ発光装置及びその製造方法
JP307194/2005 2005-10-21
PCT/JP2006/320538 WO2007046317A1 (ja) 2005-10-21 2006-10-16 半導体レーザ発光装置及びその製造方法

Publications (2)

Publication Number Publication Date
CN101292402A CN101292402A (zh) 2008-10-22
CN101292402B true CN101292402B (zh) 2010-05-19

Family

ID=37962411

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006800389155A Active CN101292402B (zh) 2005-10-21 2006-10-16 半导体激光发光装置及其制造方法

Country Status (6)

Country Link
US (2) US7860138B2 (https=)
JP (1) JP5013698B2 (https=)
KR (1) KR101006267B1 (https=)
CN (1) CN101292402B (https=)
TW (1) TW200721619A (https=)
WO (1) WO2007046317A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102204040B (zh) * 2008-10-31 2013-05-29 奥普拓能量株式会社 半导体激光元件
US9865772B2 (en) 2015-01-06 2018-01-09 Apple Inc. LED structures for reduced non-radiative sidewall recombination
US12489274B2 (en) * 2020-01-22 2025-12-02 Mitsubishi Electric Corporation Semiconductor device and method for manufacturing semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1604414A (zh) * 2003-09-30 2005-04-06 夏普株式会社 包括多个激光振荡部的单片多波长激光元件及其制造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4961197A (en) * 1988-09-07 1990-10-02 Hitachi, Ltd. Semiconductor laser device
JPH0590699A (ja) * 1991-09-27 1993-04-09 Olympus Optical Co Ltd 多波長半導体レ−ザ装置の製造方法
US5396508A (en) 1992-09-22 1995-03-07 Xerox Corporation Polarization switchable quantum well laser
US5412678A (en) * 1992-09-22 1995-05-02 Xerox Corporation Multi-beam, orthogonally-polarized emitting monolithic quantum well lasers
JPH1098234A (ja) * 1996-09-25 1998-04-14 Mitsubishi Electric Corp 半導体レーザ，及びその製造方法
JP2000307191A (ja) * 1999-04-22 2000-11-02 Victor Co Of Japan Ltd 半導体レ−ザ装置の製造方法
US6400743B1 (en) * 1999-08-05 2002-06-04 Fuji Photo Film Co., Ltd. High-power semiconductor laser device having current confinement structure and index-guided structure
JP3950590B2 (ja) * 1999-08-31 2007-08-01 ローム株式会社 半導体レーザおよびその製法
US6813290B1 (en) * 1999-11-25 2004-11-02 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and method for fabricating the same
JP3971566B2 (ja) * 1999-11-25 2007-09-05 松下電器産業株式会社 半導体レーザ素子及びその製造方法
US6396508B1 (en) * 1999-12-02 2002-05-28 Matsushita Electronics Corp. Dynamic low-level enhancement and reduction of moving picture disturbance for a digital display
JP3971581B2 (ja) 2000-02-29 2007-09-05 松下電器産業株式会社 半導体レーザ素子アレイ及びその製造方法
US6546035B2 (en) 2000-02-29 2003-04-08 Matsushita Electric Industrial Co., Ltd. Semiconductor laser diode array and method of fabricating the same
JP2001244569A (ja) 2000-03-01 2001-09-07 Sony Corp 半導体レーザ発光装置の製造方法
JP2002368335A (ja) * 2001-06-05 2002-12-20 Ricoh Co Ltd 半導体レーザ素子およびその作製方法および半導体レーザアレイおよび光通信システムおよび光インターコネクションシステムおよび光ピックアップシステムおよび電子写真システム
JP2004186259A (ja) * 2002-11-29 2004-07-02 Toshiba Corp 半導体レーザ素子、その製造方法、および多波長集積化半導体レーザ装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1604414A (zh) * 2003-09-30 2005-04-06 夏普株式会社 包括多个激光振荡部的单片多波长激光元件及其制造方法

Also Published As

Publication number Publication date
TWI310255B (https=) 2009-05-21
JP5013698B2 (ja) 2012-08-29
CN101292402A (zh) 2008-10-22
WO2007046317A1 (ja) 2007-04-26
JP2007115974A (ja) 2007-05-10
US20090168824A1 (en) 2009-07-02
TW200721619A (en) 2007-06-01
US8102892B2 (en) 2012-01-24
KR101006267B1 (ko) 2011-01-06
US7860138B2 (en) 2010-12-28
US20110064104A1 (en) 2011-03-17
KR20080061384A (ko) 2008-07-02

Similar Documents

Publication Publication Date Title
CN101512783B (zh) 半导体发光元件
CN104380545B (zh) 具有光束形状修改的激光器
CN114175281B (zh) 发光元件和发光元件的制造方法
KR20080095243A (ko) 발광 소자
US7745839B2 (en) Double wavelength semiconductor light emitting device and method of manufacturing the same
US20090081821A1 (en) Method of manufacturing semiconductor light-emitting element
KR102426467B1 (ko) 반도체 광 디바이스의 제조방법 및 반도체 광 디바이스의 중간체
US7166865B2 (en) Semiconductor light emitting device and method for manufacturing same
US20210167582A1 (en) Semiconductor laser element
JPH0856018A (ja) 半導体発光素子、および半導体発光素子の製造方法
JP2018014444A (ja) 半導体多層膜反射鏡及び垂直共振器型発光素子の製造方法
CN101292402B (zh) 半导体激光发光装置及其制造方法
TWI404237B (zh) 發光元件及其製造方法
JP7363193B2 (ja) 半導体素子の製造方法
JPH07283487A (ja) 半導体装置及びその製造方法
TWI871363B (zh) 製造具有多個量子井之半導體結構
JP2002217446A (ja) 光半導体集積素子及びその製造方法
JPS63179590A (ja) ＡｌＧａＩｎＰ半導体発光素子
JP2006013381A (ja) 発光素子
JP4996186B2 (ja) 半導体装置および化合物半導体基板とその製造方法
JP2006351784A (ja) 半導体レーザ及びその製造方法。
JPS62165384A (ja) 半導体発光装置の製造方法
JP2006245340A (ja) 半導体装置の製造方法
JP2007227651A (ja) ２波長半導体発光装置及びその製造方法
JP2006237475A (ja) 半導体レーザの製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant