KR101006267B1 - 반도체 레이저 발광 장치 및 그 제조 방법 - Google Patents

반도체 레이저 발광 장치 및 그 제조 방법 Download PDF

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Publication number
KR101006267B1
KR101006267B1 KR1020087010171A KR20087010171A KR101006267B1 KR 101006267 B1 KR101006267 B1 KR 101006267B1 KR 1020087010171 A KR1020087010171 A KR 1020087010171A KR 20087010171 A KR20087010171 A KR 20087010171A KR 101006267 B1 KR101006267 B1 KR 101006267B1
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KR
South Korea
Prior art keywords
layer
cladding layer
laser light
light emitting
lower cladding
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Expired - Fee Related
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KR1020087010171A
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English (en)
Korean (ko)
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KR20080061384A (ko
Inventor
쯔구끼 노마
Original Assignee
로무 가부시키가이샤
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Publication of KR20080061384A publication Critical patent/KR20080061384A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
KR1020087010171A 2005-10-21 2006-10-16 반도체 레이저 발광 장치 및 그 제조 방법 Expired - Fee Related KR101006267B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005307194A JP5013698B2 (ja) 2005-10-21 2005-10-21 ２波長型半導体レーザ発光装置及びその製造方法
JPJP-P-2005-00307194 2005-10-21

Publications (2)

Publication Number Publication Date
KR20080061384A KR20080061384A (ko) 2008-07-02
KR101006267B1 true KR101006267B1 (ko) 2011-01-06

Family

ID=37962411

Family Applications (1)

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KR1020087010171A Expired - Fee Related KR101006267B1 (ko) 2005-10-21 2006-10-16 반도체 레이저 발광 장치 및 그 제조 방법

Country Status (6)

Country Link
US (2) US7860138B2 (https=)
JP (1) JP5013698B2 (https=)
KR (1) KR101006267B1 (https=)
CN (1) CN101292402B (https=)
TW (1) TW200721619A (https=)
WO (1) WO2007046317A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102204040B (zh) * 2008-10-31 2013-05-29 奥普拓能量株式会社 半导体激光元件
US9865772B2 (en) 2015-01-06 2018-01-09 Apple Inc. LED structures for reduced non-radiative sidewall recombination
US12489274B2 (en) * 2020-01-22 2025-12-02 Mitsubishi Electric Corporation Semiconductor device and method for manufacturing semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0590699A (ja) * 1991-09-27 1993-04-09 Olympus Optical Co Ltd 多波長半導体レ−ザ装置の製造方法
JP2000307191A (ja) * 1999-04-22 2000-11-02 Victor Co Of Japan Ltd 半導体レ−ザ装置の製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4961197A (en) * 1988-09-07 1990-10-02 Hitachi, Ltd. Semiconductor laser device
US5396508A (en) 1992-09-22 1995-03-07 Xerox Corporation Polarization switchable quantum well laser
US5412678A (en) * 1992-09-22 1995-05-02 Xerox Corporation Multi-beam, orthogonally-polarized emitting monolithic quantum well lasers
JPH1098234A (ja) * 1996-09-25 1998-04-14 Mitsubishi Electric Corp 半導体レーザ，及びその製造方法
US6400743B1 (en) * 1999-08-05 2002-06-04 Fuji Photo Film Co., Ltd. High-power semiconductor laser device having current confinement structure and index-guided structure
JP3950590B2 (ja) * 1999-08-31 2007-08-01 ローム株式会社 半導体レーザおよびその製法
US6813290B1 (en) * 1999-11-25 2004-11-02 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and method for fabricating the same
JP3971566B2 (ja) * 1999-11-25 2007-09-05 松下電器産業株式会社 半導体レーザ素子及びその製造方法
US6396508B1 (en) * 1999-12-02 2002-05-28 Matsushita Electronics Corp. Dynamic low-level enhancement and reduction of moving picture disturbance for a digital display
JP3971581B2 (ja) 2000-02-29 2007-09-05 松下電器産業株式会社 半導体レーザ素子アレイ及びその製造方法
US6546035B2 (en) 2000-02-29 2003-04-08 Matsushita Electric Industrial Co., Ltd. Semiconductor laser diode array and method of fabricating the same
JP2001244569A (ja) 2000-03-01 2001-09-07 Sony Corp 半導体レーザ発光装置の製造方法
JP2002368335A (ja) * 2001-06-05 2002-12-20 Ricoh Co Ltd 半導体レーザ素子およびその作製方法および半導体レーザアレイおよび光通信システムおよび光インターコネクションシステムおよび光ピックアップシステムおよび電子写真システム
JP2004186259A (ja) * 2002-11-29 2004-07-02 Toshiba Corp 半導体レーザ素子、その製造方法、および多波長集積化半導体レーザ装置
JP4326297B2 (ja) * 2003-09-30 2009-09-02 シャープ株式会社 モノリシック多波長レーザ素子およびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0590699A (ja) * 1991-09-27 1993-04-09 Olympus Optical Co Ltd 多波長半導体レ−ザ装置の製造方法
JP2000307191A (ja) * 1999-04-22 2000-11-02 Victor Co Of Japan Ltd 半導体レ−ザ装置の製造方法

Also Published As

Publication number Publication date
TWI310255B (https=) 2009-05-21
JP5013698B2 (ja) 2012-08-29
CN101292402A (zh) 2008-10-22
WO2007046317A1 (ja) 2007-04-26
JP2007115974A (ja) 2007-05-10
US20090168824A1 (en) 2009-07-02
TW200721619A (en) 2007-06-01
US8102892B2 (en) 2012-01-24
CN101292402B (zh) 2010-05-19
US7860138B2 (en) 2010-12-28
US20110064104A1 (en) 2011-03-17
KR20080061384A (ko) 2008-07-02

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