WO2007023945A1 - Dispositif auxiliaire de génération de plasma par décharge - Google Patents

Dispositif auxiliaire de génération de plasma par décharge Download PDF

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Publication number
WO2007023945A1
WO2007023945A1 PCT/JP2006/316729 JP2006316729W WO2007023945A1 WO 2007023945 A1 WO2007023945 A1 WO 2007023945A1 JP 2006316729 W JP2006316729 W JP 2006316729W WO 2007023945 A1 WO2007023945 A1 WO 2007023945A1
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WIPO (PCT)
Prior art keywords
discharge
electrode
electron source
potential
discharge plasma
Prior art date
Application number
PCT/JP2006/316729
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English (en)
Japanese (ja)
Inventor
Takashi Hatai
Koichi Aizawa
Tsutomu Ichihara
Original Assignee
Matsushita Electric Works, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2005246801A external-priority patent/JP5102442B2/ja
Application filed by Matsushita Electric Works, Ltd. filed Critical Matsushita Electric Works, Ltd.
Publication of WO2007023945A1 publication Critical patent/WO2007023945A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J61/00—Gas-discharge or vapour-discharge lamps
    • H01J61/02—Details
    • H01J61/54—Igniting arrangements, e.g. promoting ionisation for starting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J17/00—Gas-filled discharge tubes with solid cathode
    • H01J17/02—Details
    • H01J17/30—Igniting arrangements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B41/00—Circuit arrangements or apparatus for igniting or operating discharge lamps
    • H05B41/14—Circuit arrangements
    • H05B41/16—Circuit arrangements in which the lamp is fed by dc or by low-frequency ac, e.g. by 50 cycles/sec ac, or with network frequencies
    • H05B41/20—Circuit arrangements in which the lamp is fed by dc or by low-frequency ac, e.g. by 50 cycles/sec ac, or with network frequencies having no starting switch
    • H05B41/22—Circuit arrangements in which the lamp is fed by dc or by low-frequency ac, e.g. by 50 cycles/sec ac, or with network frequencies having no starting switch for lamps having an auxiliary starting electrode

Definitions

  • the present invention relates to a discharge plasma apparatus using a discharge plasma, such as a fluorescent lamp, an ultraviolet lamp, a plasma display panel, or the like, or a discharge plasma generation assisting apparatus used in a light emitting device.
  • a discharge plasma such as a fluorescent lamp, an ultraviolet lamp, a plasma display panel, or the like
  • a discharge plasma generation assisting apparatus used in a light emitting device.
  • discharge gas t ⁇ ⁇
  • discharge electrodes a pair of discharge electrodes arranged in the airtight container and applying an electric field to the discharge gas
  • the pair of discharge electrodes function as an energy supply unit that supplies energy for generating discharge plasma.
  • a discharge medium containing mercury enclosed in a light-transmitting hermetic container is excited by discharge to generate ultraviolet rays, and is deposited on the inner surface of the hermetic container.
  • the phosphor layer is excited to emit light.
  • rare gas fluorescent lamps anhydrous silver fluorescent lamps
  • the rare gas fluorescent lamp has a problem that its efficiency is lower than that of a conventional fluorescent lamp using mercury, and in order to obtain a luminance equivalent to that of the conventional fluorescent lamp, it is higher between the discharge electrodes.
  • voltage must be applied.
  • a field emission electron source (hereinafter referred to as “electron source”) that supplies electrons into the discharge gas in the hermetic container is used as a discharge plasma generation assist device (hereinafter referred to as “electron source”).
  • electron source Providing a discharge plasma device or light-emitting device that reduces the discharge starting voltage, reduces the sustaining voltage of the discharge plasma, and stabilizes the discharge plasma.
  • a discharge plasma device or light-emitting device that reduces the discharge starting voltage, reduces the sustaining voltage of the discharge plasma, and stabilizes the discharge plasma.
  • Patent Document 1 In other words, in an airtight container filled with xenon gas, a discharge plasm between a pair of discharge electrodes. Place the electron source outside the generator space and drive the electron source at the same time as applying the voltage between the discharge electrodes or before applying the voltage to reduce the discharge start voltage. Yes.
  • the discharge start voltage is reduced by operating the electron source as an igniter. In this way, it is known that the discharge start voltage can be
  • Patent Document 1 Japanese Unexamined Patent Publication No. 2002-150944
  • a discharge plasma apparatus equipped with such an electron source or a light-emitting apparatus is supplied with a discharge plasma. It is preferable to arrange it as close as possible to the generation space.
  • the electron source since the electron source is exposed to the discharge plasma, there is a problem when it deteriorates due to damage (damage) due to ion bombardment or the like.
  • the discharge plasma may reach the electron emission surface of the electron source or a discharge may occur between the discharge electrode and the electron source. Ions collide with the electron emission surface of the electron source, and the electron source is damaged. For this reason, there is a problem that the lifetime of the electron source is shortened and, as a result, the lifetime of the discharge plasma device or the light emitting device is shortened and its reliability is lowered.
  • a ballistic electron surface emission type electron source (hereinafter referred to as “BSD (Ballistic electron Surface-emitting Device)”) MIM (Met
  • BSD Ballistic electron Surface-emitting Device
  • MIM Metal
  • a planar electron source such as an aHnsulator-Metal type electron source
  • V ⁇ ⁇ gas such as argon gas or xenon gas
  • ions collide with the surface electrode of the planar electron source the planar electron source is also damaged by ion bombardment.
  • the present invention has been made to solve the above-described conventional problems, and provides an electron source for reducing the discharge start voltage by supplying electrons into a discharge gas filled in an airtight container. It is an object of the present invention to provide means for enabling the discharge plasma apparatus or light emitting apparatus provided to extend the life of the electron source and thus the apparatus and improve the reliability. Means for solving the problem
  • a discharge plasma apparatus having a discharge plasma generation auxiliary device (hereinafter referred to as "auxiliary device" t ⁇ ⁇ ) according to the present invention is a hermetic container in which a discharge gas as a discharge medium is enclosed. It has. Further, the discharge plasma apparatus or the light emitting apparatus includes an energy supply unit that is disposed in at least one of the inside and the outside of the hermetic container and supplies energy for generating discharge plasma by discharging the discharge gas. Speak.
  • the auxiliary device according to the present invention can be used in a lighting device or the like, and assists the generation of discharge plasma.
  • This auxiliary device includes an electron source that supplies electrons into the discharge gas (field emission type electron source), and protective means for protecting the electron source such as an ion source of discharge plasma generated in the hermetic container. Basic features.
  • the auxiliary device includes a discharge detector that detects discharge of the discharge gas, and positive ions in the discharge plasma collide with the electron source when the discharge start of the discharge gas is detected. And a control means for controlling the potential of the electron source so as to suppress this.
  • the discharge detector detects the start of discharge of the discharge gas based on a change in impedance, current, or voltage between the pair of discharge electrodes. Is preferred. Further, it is preferable that the control means controls the potential of the electron source to be higher than the potential before detecting the start of discharge after detecting the start of discharge of the discharge gas.
  • the protection means includes a protection member that has an electron passage portion for allowing electrons to pass therethrough and also protects the surface electrode of the electron source by the ion force of the discharge plasma.
  • a protection member that has an electron passage portion for allowing electrons to pass therethrough and also protects the surface electrode of the electron source by the ion force of the discharge plasma.
  • at least a portion of the protective member facing the surface electrode is made of a conductive material and has an electron passage portion.
  • the protective member may be formed in a net shape.
  • the protection member may be a secondary electron emission member. Further, at least one of the inner side and the outer side of the protective member may include a secondary electron emission member.
  • the potential of the protective member may be controlled to be the same or higher than the potential of the electron emission portion of the electron source. The potential difference between the protective member and the electron emission portion of the electron source may be controlled to be smaller than the discharge start voltage.
  • the potential of the protective member is higher than the potential of the force sword electrode, and the potential of the anode electrode You may control so that it may become lower. Further, the potential difference between the potential of the anode electrode and the potential of the protective member may be controlled to be smaller than the discharge start voltage.
  • the protective member may be formed of a material that satisfies the relationship represented by the following formula.
  • d is the distance between the protective member and the cathode electrode
  • ⁇ is the electron multiplication factor in the space between the protective member and the cathode electrode
  • y is the secondary electron emission coefficient due to the ions of the discharge plasma. It is.
  • the protective member may be composed of a first protective member close to the electron source and a second protective member remote from the electron source.
  • the potential of the first protective member is controlled to be higher than that of the electron source, and the potential of the first protective member and the potential of the second protective member are different from each other. You may control so that it may become.
  • the potential of the second protective member may be controlled to be lower than the potential of the anode electrode and higher than the potential of the force sword electrode.
  • the potential of the second protective member is lower than the potential of the first protective member. You may control so that it may become.
  • the aperture ratio of the second protective member is preferably lower than the aperture ratio of the first protective member.
  • the electron source is disposed so as not to be directly exposed to the discharge plasma, while the secondary electron emission portion may be disposed obliquely in front of the electron emission surface of the electron source.
  • the electron source may be a ballistic electron surface emission electron source.
  • an electron source and thus a light emitting device including an electron source for supplying electrons into a discharge gas filled in an airtight container to reduce a discharge start voltage is provided.
  • the life of the device can be extended and the reliability can be improved.
  • FIG. 1A is a schematic diagram showing a schematic configuration of a discharge device including an auxiliary device according to Embodiment 1.
  • FIG. 1B is a schematic diagram showing a schematic configuration of a discharge device including the auxiliary device according to Embodiment 1.
  • FIG. 1C is a diagram showing a relationship between current and voltage in the discharge device according to Embodiment 1.
  • FIG. 2A is a cross-sectional view showing a schematic configuration of an electron source of the discharge device according to Embodiment 1.
  • FIG. 2A is a cross-sectional view showing a schematic configuration of an electron source of the discharge device according to Embodiment 1.
  • FIG. 2B is a cross-sectional view showing a schematic structure of a draft layer of the electron source shown in FIG. 2A.
  • FIG. 3A is a schematic diagram showing the operation of the discharge device according to Embodiment 1.
  • FIG. 3B is a schematic diagram showing the operation of the discharge device according to Embodiment 1.
  • FIG. 4A is a schematic diagram showing an operation of the discharge device including the auxiliary device according to the second embodiment.
  • FIG. 4B is a schematic diagram showing the operation of the discharge device including the auxiliary device according to Embodiment 2.
  • FIG. 4C is a schematic diagram showing an operation of the discharge device including the auxiliary device according to the second embodiment.
  • FIG. 5 is a schematic diagram showing a schematic configuration of a discharge device including an auxiliary device according to a third embodiment.
  • FIG. 6A is a cross-sectional view showing a schematic configuration of an auxiliary device of the discharge device shown in FIG.
  • FIG. 6B is a plan view of the auxiliary device shown in FIG. 6A.
  • FIG. 7 is a sectional view showing a schematic configuration of an auxiliary device according to a fourth embodiment.
  • FIG. 8A is a cross-sectional view showing a schematic configuration of the auxiliary device according to the fifth embodiment.
  • FIG. 8B is a plan view of the auxiliary device shown in FIG. 8A.
  • FIG. 9 is a cross-sectional view showing a schematic configuration of an auxiliary device according to a sixth embodiment.
  • FIG. 10 is a schematic diagram showing a schematic configuration of a discharge device including the auxiliary device according to the seventh embodiment.
  • FIG. 11 is a schematic diagram showing a schematic configuration of a discharge device including the auxiliary device according to the eighth embodiment.
  • FIG. 12 is a schematic diagram showing the configuration of the base material of the secondary electron emission portion in the discharge device shown in FIG.
  • FIG. 12B is a schematic diagram showing the configuration of the base material of the secondary electron emission portion in the discharge device shown in FIG.
  • FIG. 12C is a schematic diagram showing the configuration of the base material of the secondary electron emission portion in the discharge device shown in FIG.
  • FIG. 13A is a schematic diagram showing a configuration of a base material of a secondary electron emission portion in the discharge device shown in FIG.
  • FIG. 13B is a schematic diagram showing the configuration of the base material of the secondary electron emission portion in the discharge device shown in FIG.
  • FIG. 13C is a schematic diagram showing the configuration of the base material of the secondary electron emission portion in the discharge device shown in FIG.
  • FIG. 14 is a schematic diagram showing a schematic configuration of a discharge device including the auxiliary device according to the ninth embodiment.
  • FIG. 16 is a schematic diagram showing a schematic configuration of a discharge device provided with an auxiliary device according to an eleventh embodiment.
  • FIG. 19A is a schematic diagram showing the configuration of the energy supply means of the discharge device.
  • ⁇ 19B A schematic diagram showing the configuration of the energy supply means of the discharge device.
  • FIG. 19C is a schematic diagram showing the configuration of the energy supply means of the discharge device.
  • FIG. 19D is a schematic diagram showing the configuration of the energy supply means of the discharge device.
  • ⁇ 19E A schematic diagram showing the configuration of the energy supply means of the discharge device.
  • FIG. 19F is a schematic diagram showing the configuration of the energy supply means of the discharge device.
  • FIG. 19G is a schematic diagram showing a configuration of energy supply means of the discharge device.
  • FIG. 19H is a schematic diagram showing the configuration of the energy supply means of the discharge device.
  • FIG. 20A is a schematic diagram showing the configuration of the energy supply means of the discharge device.
  • FIG. 20B is a graph showing changes in voltage over time.
  • FIG. 20C is a graph showing a change with time of voltage.
  • 21A A schematic diagram showing the configuration of the energy supply means of the discharge device.
  • FIG. 21B is a graph showing a change with time of voltage.
  • FIG. 21C is a graph showing a change with time of voltage.
  • FIG. 22 is a schematic cross-sectional view showing a schematic configuration of a modified example of the discharge device.
  • ⁇ 23 A schematic cross-sectional view showing a schematic configuration of a modified example of the discharge device.
  • FIG. 24 is a schematic cross-sectional view showing a schematic configuration of a modified example of the discharge device.
  • FIG. 25 is a schematic cross-sectional view showing a schematic configuration of a modified example of the discharge device.
  • FIG. 26 is a schematic diagram showing a schematic configuration of a discharge device including the auxiliary device according to the fourteenth embodiment.
  • FIG. 27A is a schematic diagram showing a schematic configuration of a discharge device including the auxiliary device according to the fifteenth embodiment.
  • FIG. 27B A schematic cross-sectional view showing a schematic structure of the auxiliary device of the discharge device according to Embodiment 15.
  • FIG. 28 is a schematic diagram showing a schematic configuration of a discharge device including the auxiliary device according to the sixteenth embodiment.
  • FIG. 29 is a schematic cross-sectional view showing a schematic configuration of an auxiliary device of the discharge device shown in FIG. 28.
  • FIG. 30 is a schematic diagram showing a schematic configuration of another discharge device including the auxiliary device according to the sixteenth embodiment. Explanation of symbols
  • a discharge plasma apparatus or a light emitting apparatus (hereinafter collectively referred to as “discharge apparatus”) provided with an auxiliary apparatus (discharge plasma generation auxiliary apparatus) according to Embodiment 1 is a discharge tube A. It has.
  • the discharge tube A includes an airtight container 1 in which a gas (discharge gas) as a discharge medium is enclosed.
  • a pair of plasma discharge electrodes 2a and 2b, an electron source 3 (field emission electron source) for supplying electrons into the discharge gas, and an electron emission surface of the electron source 3 are provided.
  • Opposing grid electrodes 4 are accommodated.
  • the discharge device includes a power source 5 that applies a voltage between the discharge electrodes 2a and 2b, a discharge detection means 6 that detects a discharge state of the discharge tube A, and a discharge detection means 6 that discharges the discharge tube A.
  • Control means 7 is provided for controlling the potential of the electron source 3 so as to suppress the collision of positive ions with the electron source 3 when the start is detected.
  • the grid electrode 4 has an opening (not shown) for allowing electrons emitted from the electron source 3 to pass therethrough.
  • the electron source 3 and the grid electrode 4 constitute an auxiliary device (idanator)! / Speak.
  • the electron source 3 is driven to discharge from the electron source 3.
  • the electron force that has passed through the opening of the grid electrode 4 is supplied to the space between the discharge electrodes 2a and 2b.
  • the arrow in FIG. 1A indicates the flow of electrons e ⁇ emitted from the electron source 3 and passing through the opening of the grid electrode 4.
  • discharge start voltage the voltage required to start plasma discharge
  • power consumption can be reduced. If the electron source 3 is driven even after the start of discharge, the discharge plasma can be stabilized, the sustaining voltage can be reduced, and the power consumption can be further reduced.
  • the discharge tube A is a straight tube type rare gas fluorescent lamp.
  • the hermetic container 1 is made of a translucent material such as quartz glass or translucent ceramics. In the airtight container 1, xenon gas is sealed as a discharge gas. A phosphor layer (not shown) that emits light by being excited by ultraviolet rays generated by the excitation of xenon gas is provided on the inner surface of the hermetic container 1.
  • the discharge device discharges discharge tube A by applying a DC voltage from power supply 5 to both discharge electrodes 2a and 2b when a power switch (not shown) is turned on. It has become to let you. That is, the discharge tube A is lit by direct current.
  • the discharge electrode 2a arranged at one end in the longitudinal direction of the hermetic container 1 is an anode electrode, and the other end (FIG. 1A).
  • the discharge electrode 2b arranged on the right side is a force sword electrode (in the first and second embodiments, the “discharge electrode 2a” and the “discharge electrode 2b” are appropriately replaced with the “anode electrode 2a” and the “force electrode”, respectively. Sword electrode 2b ”).
  • the electron source 3 is disposed in the vicinity of the anode electrode 2a on the side opposite to the force sword electrode 2b with respect to the anode electrode 2a.
  • the power source 5 is a pulse power source that outputs a DC pulse voltage.
  • the electron source 3 includes a rectangular plate-like insulating substrate 14 having a force such as an insulating glass substrate or an insulating ceramic substrate.
  • a lower electrode 15 made of a metal film such as a tungsten film is formed on one surface of the insulating substrate 14.
  • a strong electric field drift layer 16 (hereinafter referred to as “drift layer 16” for short) is formed.
  • drift layer 16 On the drift layer 16, a surface electrode 17 made of a metal thin film such as a gold thin film is formed.
  • the drift layer 16 constitutes an electron passage layer.
  • the lower electrode 15, the drift layer 16, and the surface electrode 17 constitute an electron source element 3 a that emits electrons through the surface electrode 17.
  • the surface of the surface electrode 17 constitutes an electron emission surface.
  • the drift layer 16 is formed at least on the surface of the grain 51 of columnar polycrystalline silicon grains (semiconductor crystals) 51 arranged on the surface side of the lower electrode 15.
  • Each grain 51 extends in the thickness direction of the lower electrode 15, that is, in the thickness direction of the insulating substrate 14.
  • the electron source element 3a In the electron source element 3a according to Embodiment 1, electrons can be emitted even when the drive voltage applied between the surface electrode 17 and the lower electrode 15 is a low voltage of about 10 to 20V.
  • the electron source element 3a is less dependent on the degree of vacuum of the electron emission characteristics and does not generate a pobbing phenomenon during electron emission, and can stably emit electrons with high electron emission efficiency.
  • the basic configuration of the electron source element 3a is well known, it is considered that electron emission occurs in the following model. That is, when a voltage is applied between the surface electrode 17 and the lower electrode 15 such that the surface electrode 17 has a high potential, electrons e ⁇ are injected from the lower electrode 15 into the drift layer 16. Further, most of the electric field applied to the drift layer 16 is applied to the silicon oxide film 64. Therefore, the injected electron e ⁇ is accelerated by the strong electric field applied to the silicon oxide film 64. These electrons e ⁇ drift in the region 65 between the grains 51 in the drift layer 16 toward the surface in the direction indicated by the arrow in FIG. 2B, and are emitted by tunneling through the surface electrode 17.
  • the drift layer 16 electrons injected from the lower electrode 15 are converted into silicon microcrystals 63. Drifted by the electric field applied to the silicon oxide film 64 that is hardly scattered by the. These electrons e ⁇ are emitted through the surface electrode 17 (ballistic electron emission phenomenon). Heat generated in the drift layer 16 is released through the grains 51. Therefore, no pobbing phenomenon occurs when electrons are emitted, and electrons can be stably emitted.
  • the silicon oxide film 64 that is an insulating film is formed by an acid process.
  • a nitriding process or an oxynitriding process may be used instead of the acid process.
  • the nitridation process all of the insulating films are silicon nitride films.
  • the oxynitridation process is used, the insulating film is a silicon oxynitride film.
  • the grid electrode 4 is disposed opposite to the electron emission surface of the electron source 3. Therefore, when a driving voltage is applied to the electron source 3 and a voltage of, for example, about 100 V is applied between the grid electrode 4 and the surface electrode 17 so that the grid electrode 4 has a high potential, the electron source 3 The electrons emitted from 3 are attracted to the grid electrode 4. Since the grid electrode 4 has the opening as described above, electrons can be supplied to the space between the anode electrode 2a and the cathode electrode 2b through the opening.
  • the grid electrode 4 for example, a grid electrode made of a conductive material such as nickel, aluminum, or stainless steel, and each mesh opening is used.
  • a plate-like member made of a conductive material may be used in which a plurality of circular or rectangular holes are formed as openings.
  • the current-voltage characteristics between the anode electrode 2a and the force sword electrode 2b change greatly before and after the start of discharge.
  • point P1 in Fig. 1C shows the current-voltage characteristics before discharge, but in this case, almost no current flows.
  • Point P2 is a force indicating the current-voltage characteristics after discharge. In this case, the current increases while the voltage decreases. That is, in the discharge tube A, when the discharge is started, the impedance, current, and voltage between the discharge electrodes 2a and 2b change rapidly.
  • the discharge detection means 6 detects the discharge state of the discharge tube A based on a change in impedance between the discharge electrodes 2a, 2b. Therefore, discharge of discharge tube A is caused by impedance change.
  • the start of electricity can be detected.
  • the discharge detection means 6 may detect the start of discharge of the discharge tube A based on a change in current or a change in voltage that is not a change in impedance between the discharge electrodes 2a and 2b. . In either case, the discharge start of the discharge tube A can be reliably detected by the change in the electrical characteristics between the discharge electrodes 2a and 2b.
  • the discharge device has the electron source so as to suppress the collision of positive ions with the electron source 3 when the discharge detection means 6 detects the start of discharge of the discharge tube A.
  • Control means 7 for controlling the potential of 3 is provided. Then, as shown in FIG. 1B, after the discharge is started, the driving of the electron source 3 is stopped, and positive ions from the discharge plasma 10 are prevented from colliding with the electron source 3.
  • a drive voltage is applied between the surface electrode 17 and the lower electrode 15, a grid voltage is applied between the grid electrode 4 and the surface electrode 17, and the anode electrode 2a and the force sword electrode 2b
  • the surface electrode 17 has a low potential with respect to the anode electrode 2a in order to efficiently supply the electrons emitted from the electron source 3 to the space between the discharge electrodes 2a and 2b. I prefer to be! /.
  • any one of the grid electrode 4, the surface electrode 17 and the lower electrode 15 has the same potential as the anode electrode 2a, the control of the potential by the control means 7 becomes easy. However, in order to increase the electron emission efficiency, it is desirable that the grid electrode 4 and the anode electrode 2a have the same potential.
  • “surface potential”, “lower potential”, “grid potential”, “anode potential”, and “force sword potential” are the surface electrode 17, the lower electrode 15, the grid electrode 4, and the anode potential, respectively. Show the potential of pole 2a and force sword electrode 2b!
  • the control means 7 determines that the potential of the electron source 3 and the potential of the grid electrode 4 are The potentials of the surface electrode 17, the lower electrode 15 and the grid electrode 4 are controlled so as to be higher than the potential of the electrode 2a (positive noise). That is, when the discharge detection means 6 detects the start of discharge, the control means 7 controls the potential of the electron source 3 to be higher than the potential before the detection. In the example shown in FIG. 3B, the surface electrode 17, the lower electrode 15, and the grid electrode 4 are at the same potential.
  • the control means 7 may be configured by a microcomputer or the like.
  • the control means 7 stops driving the electron source 3 when the discharge detection means 6 detects the start of discharge of the discharge tube A, and
  • the potential of the electron source 3 is controlled so as to suppress the collision of positive ions with the electron source 3. For this reason, collision of positive ions to the electron source 3 can be suppressed without providing a protective member, the discharge start voltage can be reduced, and the life of the electron source 3 can be extended.
  • the opening area of the opening of the grid electrode 4 can be made sufficiently larger than the opening area of the mesh when a mesh body is used as a protective member for the purpose of preventing the entry of positive ions. For this reason, the electron emission efficiency of the auxiliary device (idanator) is increased, and the discharge start voltage can be further reduced.
  • Embodiment 2 of the present invention will be described below.
  • the basic configuration of the discharge device including the auxiliary device according to the second embodiment is the same as that of the discharge device according to the first embodiment, and only the operation of the control means 7 is different. Therefore, the operation of the control means 7 will be mainly described below with reference to FIGS. 4A to 4C.
  • the auxiliary device including the electron source 3 and the grid electrode 4 has a force sword electrode 2b with respect to the anode electrode 2a in the vicinity of the anode electrode 2a. It is arranged on the opposite side. For this reason, depending on the form of the electric field, electrons emitted from the auxiliary device are absorbed by the anode electrode 2a, and the amount of electrons supplied to the space between the anode electrode 2a and the force sword electrode 2b decreases. There are things to do.
  • the potential of the grid electrode 4 is first set higher than that of the anode electrode 2a before discharging, so that the auxiliary device cap
  • the emission of electrons is started, thereby preventing the absorption of electrons at the anode electrode 2a.
  • the life in the airtight container 1 of the electron which has also released the auxiliary device force is on the order of milliseconds.
  • the control means 7 detects the potential of the anode electrode 2a before the millisecond time elapses, that is, before it recombines with the electron force S ions and disappears. Increase discharge to start discharging.
  • the potential of the anode electrode 2a is increased to the same potential as that of the grid electrode 4.
  • the control means 7 detects the start of discharge by the discharge detection means 6 (that is, after the start of discharge).
  • the potentials of the surface electrode 17, the lower electrode 15, and the grid electrode 4 are controlled so that the potential and the potential of the grid electrode 4 become higher (positively biased) than the potential of the anode electrode 2a.
  • control means 7 controls the potential of the electron source 3 to be higher than the potential of the anode electrode 2a when the discharge detection means 6 detects the start of discharge. However, it may be controlled so as to have the same potential as the anode electrode 2a.
  • Control means 7 Force When the voltage source is applied between the anode electrode 2a and the force sword electrode 2b after driving the electron source 3, the voltage is applied between the anode electrode 2a and the force sword electrode 2b. Thus, the delay time until power discharge is started can be shortened.
  • control means 7 restarts the electron source 3 when an abnormal discharge is detected by the discharge detection means 6 after the discharge detection means 6 detects the start of discharge, an abnormal discharge occurs.
  • the electron source 3 is re-driven to supply electrons. This facilitates the transition from abnormal discharge to normal discharge.
  • the auxiliary device including the electron source 3 and the grid electrode 4 is disposed in the vicinity of the anode electrode 2a.
  • the auxiliary device may be disposed on the side opposite to the anode electrode 2a with respect to the force sword electrode 2b in the vicinity of the force sword electrode 2b, rather than being disposed in the vicinity of the anode electrode 2a.
  • the control means 7 detects the start of discharge by the discharge detection means 6, the potential of the electron source 3 and the potential of the grid electrode 4 are set to the potential of the anode electrode 2a and the force sword electrode 2b.
  • the collision of positive ions with the electron source 3 disposed in the vicinity of the force sword electrode 2b can be suppressed.
  • the auxiliary device may be disposed between the anode electrode 2a and the force sword electrode 2b.
  • the control means 7 detects the start of discharge by the discharge detection means 6, the potential of the electron source 3 and the potential of the grid electrode 4 are changed between the potential of the anode electrode 2a and the potential of the force sword electrode 2b. If the potential is controlled between them, the collision of positive ions to the electron source 3 disposed between the anode electrode 2a and the force sword electrode 2b can be suppressed.
  • the phosphor layer is provided on the inner surface of the hermetic container 1 of the discharge tube A, but the discharge tube A may be an ultraviolet lamp without providing the phosphor layer.
  • the lower electrode 15 is formed on one surface side of the insulating substrate 14.
  • a semiconductor substrate such as a silicon substrate is used, and the lower electrode is composed of the semiconductor substrate and a conductive layer (for example, an ohmic electrode) stacked on the back side of the semiconductor substrate. Even so.
  • the electron source 3 is a BS D (ballistic electron surface emission electron source) that emits electrons by a ballistic electron emission phenomenon.
  • the electron source 3 is not limited to BSD, and other types of electron sources may be used.
  • an MIM type electron source using an insulator layer as an electron passage layer instead of the drift layer 16 passing electrons between the semiconductor layer on the lower electrode 15 side and the insulator layer on the surface electrode 17 side instead of the drift layer 16
  • the MIS (Metal-Insulator-Semiconductor) type electron source used as the layer, etc. may be used as well as those that can be used at low vacuum like BSD.
  • the life of the electron source 3 can be extended and the reliability can be improved as compared with the case where a Spindt-type electrode is used.
  • BSD is advantageous in terms of reducing the discharge start voltage and the discharge sustain voltage because the energy of the emitted electrons is relatively large! /.
  • Embodiment 3 of the present invention will be described below.
  • the discharge device (light emitting device) according to Embodiment 3 is an ultraviolet lamp.
  • the discharge device including the auxiliary device according to the third embodiment includes an airtight container 1 in which a discharge gas (for example, a rare gas such as xenon) as a discharge medium is sealed, and an airtight container 1 is disposed in 1 and discharge plasma is generated in the plasma generation space 8 in the hermetic vessel 1 by discharge of the discharge gas 1 A pair of discharge electrodes 2a and 2b and an electron in the discharge gas placed in the hermetic vessel 1 And an electron source 3 to be supplied.
  • This discharge device (ultraviolet lamp) emits ultraviolet rays by discharging the discharge gas in the hermetic vessel 1.
  • the discharge device further includes a protective member 20 that protects the surface electrode 17 of the electron source 3 from the ion source of the discharge plasma generated in the hermetic vessel 1.
  • the protective member 20 has a plurality of openings 22a through which electrons emitted from the electron source 3 are passed.
  • the discharge device according to Embodiment 3 is a straight tube type ultraviolet lamp.
  • the hermetic container 1 is formed in a cylindrical shape from a light-transmitting material such as glass or light-transmitting ceramic.
  • Discharge electrodes 2a and 2b are disposed in the airtight container 1 in the vicinity of both ends in the longitudinal direction, respectively. In the vicinity of the discharge electrode 2a, the electron source 3 is disposed at a position where the space force between the discharge electrodes 2a and 2b is separated.
  • the electrons emitted from the electron source 3 are supplied into the discharge gas.
  • the arrows in FIG. 5 indicate the flow of electrons emitted from the electron source 3.
  • a pair of discharge electrodes 2a and 2b arranged inside the hermetic vessel 1 constitutes energy supply means for supplying energy for generating discharge plasma by discharging the discharge gas.
  • the electron source 3 and the protective member 20 constitute an auxiliary device (discharge plasma generation auxiliary device) that assists the generation of discharge plasma.
  • the configuration and function of the electron source 3 according to Embodiment 3 are basically the same as the configuration and function of the electron source 3 according to Embodiment 1.
  • the configuration and function of the drift layer 16 of the electron source element 3a according to Embodiment 3 are the same as the configuration and function of the drift layer 16 according to Embodiment 1. (See Figure 2B).
  • the drive voltage applied to the electron source 3 may be a constant DC voltage or a pulsed voltage. If the drive voltage is a pulsed voltage, apply a drive voltage, and sometimes apply a reverse bias voltage.
  • Electron emission in the electron source element 3a according to the third embodiment also occurs in the same model as the electron emission in the electron source element 3a according to the first embodiment.
  • the insulating film can be formed using an acid process, a nitriding process, or an oxynitriding process.
  • the protective member 20 includes an insulating protective member 21 formed of an insulating material (for example, an insulating resin such as a fluorine-based resin, an insulating ceramic), and a conductive material (for example, nickel, And conductive protection member 22 made of aluminum, stainless steel, or the like.
  • the insulating protection member 21 is formed in a rectangular parallelepiped shape, and one surface (lower surface) of the insulating protection member 21 is fully open.
  • the insulating protective member 21 has a front wall facing the electron emission surface of the electron source 3.
  • a rectangular window hole 21a is provided in the front wall forming a part of the insulating protective member 21, and the conductive protective member 22 is disposed in the window hole 21a.
  • the conductive protection member 22 has a plurality of openings 22a for allowing electrons emitted from the electron source 3 to pass therethrough.
  • the portion of the protective member 20 that faces the surface electrode 17 of the electron source 3 includes the conductive protective member 22 that has the opening 22a and is formed of a conductive material.
  • the conductive protection member 22 is formed in a mesh shape or a lattice shape, and the mesh-shaped mesh portion or the lattice-shaped hole portion forms a square opening 22a.
  • the conductive protection member 22 is generally called 30 mesh, and one side of the square mesh portion is 0.6 mm, and the diameter of the wire is 0.25 mm. -A net made of nickel is used.
  • the size of the mesh that is, the size of the opening 22a is not limited to this, and electrons emitted from the electron source 3 can pass therethrough and are generated in the plasma generation space 8. Any material can be used as long as it can suppress the entry of ions having a discharge plasma power.
  • the length of one side of the square opening 22a is 0. lmn! It can be appropriately set within a range of about 2 mm.
  • the conductive protection member 22 is formed in a net shape, the production of the conductive protection member 22 is easy.
  • a part of the electrons emitted from the electron source 3 is supplied into the discharge gas in the plasma generation space 8 through the opening 22a.
  • the discharge start voltage and the discharge sustain voltage can be reduced.
  • the driving of the electron source 3 is started to supply electrons, and the supply of electrons is continued even after the discharge plasma is generated.
  • Both the discharge start voltage and the discharge sustain voltage can be reduced.
  • the discharge start voltage is usually higher than the discharge sustain voltage, so it may be possible to stop supplying electrons after the discharge has started.
  • the auxiliary device according to Embodiment 3 has an opening 22a through which electrons emitted from the electron source 3 pass, and the surface electrode of the electron source 3 from the ion plasma of the discharge plasma generated in the hermetic vessel 1 1 Protective member 20 for protecting 7 is provided. For this reason, the number of ions colliding with the surface electrode 17 can be reduced, and the life of the electron source 3 can be extended and the reliability can be improved.
  • the portion of the protective member 20 that faces the surface electrode 17 has an opening 22a and is formed from the conductive protective member 22 formed of a conductive material. Become. Therefore, at least a portion of the protective member 20 that faces the surface electrode 17 can be prevented from being charged by electrons. For this reason, it is possible to prevent a problem that electrons emitted from the electron source 3 cannot pass through the opening 22a due to charging.
  • the electron source element 3a is formed on the insulating substrate 14, and the protective member 20 has a shape that does not cover part of the insulating substrate 14.
  • the protective member 20 may have a shape surrounding the entire electron source 3 or a shape surrounding only the electron source element 3a. Further, it may be a shape that covers only the front portion of the electron source 3.
  • the shape of the protective member 20 may be appropriately designed according to the shape of the airtight container 1, the arrangement of the discharge electrodes 2a and 2b, the arrangement of the electron source 3, and the like.
  • the protective member 20 when the protective member 20 is provided in the plasma generation space 8, the discharge plasma tends to spread along the conductive portion of the protective member 20. For this reason, the state of the discharge plasma may be disturbed by the provision of the protective member 20.
  • the conductive protection member 22 is electrically insulated from other parts. For this reason, even if the discharge plasma is in contact with the conductive protection member 22, it is possible to prevent the discharge plasma from being unnecessarily widened.
  • the conductive protection member 22 and the surface electrode 17 are short-circuited outside the hermetic container 1, so that the conductive protection member 22 and the surface electrode 17 have the same potential. Yes. Therefore, it is possible to increase the amount of electrons emitted from the electron source 3 and passing through the opening 22a of the conductive protection member 22 while suppressing the entry of negative ions and positive ions into the protection member 20.
  • the potential of the conductive protection member 22 is kept higher than the potential of the surface electrode 17, electrons emitted from the electron source 3 are accelerated. For this reason, the amount of electrons emitted from the electron source 3 and passing through the opening 22a of the conductive protection member 22 can be increased.
  • the planar shape of the surface electrode 17 and the opening shape of the opening 22a are made the same, or the surface electrode If the size of the opening 22a is made slightly larger than the size of the pole 17, the amount of emitted electrons can be increased while reducing the power consumption. In this case, if the potential difference between the conductive protection member 22 and the surface electrode 17 is too small, the electrons are not accelerated so much, and if it is too large, the electrons are strongly attracted to the conductive protection member 22 and the amount of electrons passing through the opening 22a. Less. Therefore, the potential difference between the conductive protection member 22 and the surface electrode 17 is preferably set so that, for example, the electric field strength between the conductive protection member 22 and the surface electrode 17 is about lkVZcm.
  • Embodiment 4 of the present invention will be described below.
  • the basic configuration of the auxiliary device of the discharge device according to the fourth embodiment is almost the same as that of the auxiliary device according to the third embodiment, and FIG.
  • the only difference is that it includes an extraction electrode 30 made of a metal plate (for example, a nickel plate) disposed outside the protective member 20 and facing the surface electrode 17. Therefore, hereinafter, differences from the third embodiment will be mainly described with reference to FIG.
  • the auxiliary device according to the fourth embodiment includes an extraction electrode 30 that is disposed outside the protective member 20 and faces the surface electrode 34. Therefore, it is possible to accelerate the electrons by keeping the potential of the extraction electrode 30 higher than the potential of the surface electrode 17, and to increase the amount of the electrons emitted from the electron source 3 through the opening 22a. it can.
  • the extraction electrode 30 is disposed away from the conductive protection member 22 so that a gas exists between the protection member 20 and the extraction electrode 30.
  • Embodiment 5 of the present invention will be described below.
  • the basic configuration of the auxiliary device of the discharge device according to the fifth embodiment is substantially the same as that of the auxiliary device according to the third embodiment, and only the differences are described below. Therefore, hereinafter, differences from Embodiment 3 will be mainly described with reference to FIGS. 8A and 8B.
  • the planar shape of the surface electrode 17 of the electron source 3 is formed in a stripe shape, and the planar shape of the surface electrode 17 is an opening shape of the opening 22a.
  • the planar shape of the conductive protection member 22 is a stripe shape so as to be the same.
  • the surface electrode 17 is located in the projection area
  • Embodiment 5 it is possible to reduce the amount of electrons that collide with the peripheral portion of the opening 22a of the protective member 20, that is, electrons that do not pass through the opening 22a (useless electrons). At the same time, the power consumption of the electron source 3 can be reduced.
  • the electron source 3 according to the fifth embodiment is a BSD having the same operation principle as that of the third embodiment, except that the shape of the surface electrode 17 is different. Therefore, compared with the Spindt type electron source, the electron emission angle is small and the straightness of the emitted electrons is good, so the above effect is particularly remarkable.
  • the extraction electrode 30 may be provided as in the fourth embodiment.
  • the sixth embodiment of the present invention will be described below.
  • the discharge according to Embodiment 6 The basic configuration of the auxiliary device of the apparatus is almost the same as that of the auxiliary device according to the third embodiment.
  • the electron emitted from the electron source 3 is disposed between the protective member 20 and the surface electrode 17.
  • the only difference is that it has a secondary electron emission member 40 that emits secondary electrons upon collision. Therefore, the differences from Embodiment 3 will be mainly described below with reference to FIG.
  • the secondary electron emission member 40 has a secondary material that also has a material force for emitting secondary electrons to a base material in which holes for allowing electrons to pass through a flat plate material are provided. It is formed by applying an electron emission film.
  • MgO is used as the material that emits secondary electrons.
  • this material is not limited to MgO, and other materials such as Cs, Ag, BaO, MgO, amorphous carbon, and diamond may be used.
  • the secondary electrons emitted from the secondary electron emitting member 40 which is not only the electrons emitted from the electron source 3, are also supplied to the discharge gas. As a result, the amount of electrons supplied to the discharge gas can be increased.
  • the extraction electrode 30 may be provided. Further, the secondary electron emission member 40 similar to that of the sixth embodiment may be provided in other embodiments.
  • Embodiment 7 of the present invention will be described below.
  • the basic configuration of the auxiliary device of the discharge device according to the seventh embodiment is almost the same as that of the auxiliary device according to the third embodiment, and as shown in FIG. 10, the electron source 3 and the protection member 20 are made of an airtight container. The only difference is that it is arranged in the vicinity of the inner wall surface of the hermetic container 1 in the middle part in the longitudinal direction of 1. Other points are the same as in the third embodiment.
  • the shape of the hermetic container 1 is cylindrical, but the hermetic container 1 is not limited to a cylindrical one.
  • it may be a spherical shape such as a light bulb, or may be a rectangular parallelepiped shape or a cubic shape.
  • it may be a flat type airtight container composed of a pair of flat plates and a frame interposed between the flat plates.
  • a pair of discharge electrodes 2a and 2b are arranged in the cylindrical hermetic vessel 1 as energy supply means so as to be separated from each other in the longitudinal direction of the hermetic vessel 1.
  • the arrangement and configuration of the energy supply means are not limited to this.
  • the voltage applied to the energy supply means may be appropriately selected from DC voltage, AC voltage, pulse voltage, and the like.
  • an ultraviolet lamp is exemplified as the discharge device.
  • the discharge device is not limited to an ultraviolet lamp, but may be a fluorescent lamp for illumination, a plasma display panel, or the like.
  • a phosphor layer that emits light by being excited by ultraviolet rays may be provided at an appropriate site on the inner surface of the hermetic container 1.
  • xenon gas is used as the discharge gas sealed in the hermetic container 1.
  • the discharge gas is not limited to xenon gas. Any gas that causes discharge by supplying energy can be used.
  • the lower electrode 15 is formed on one surface side of the insulating substrate 14.
  • a semiconductor substrate such as a silicon substrate is used, and the lower electrode is configured by the semiconductor substrate and the conductive layer laminated on the back side of the semiconductor substrate. May be.
  • the electron source 3 according to Embodiments 3 to 6 is BSD.
  • other types of electron sources such as MIM type electron sources and MIS type electron sources may be used instead of BSD.
  • Embodiment 8 of the present invention will be described below.
  • the discharge device (light emitting device) according to Embodiment 8 is an ultraviolet lamp.
  • the discharge device including the auxiliary device according to the eighth embodiment includes an airtight container 1 in which a discharge gas (for example, a rare gas such as xenon) as a discharge medium is enclosed, and an airtight container 1 A plasma generation space in the hermetic vessel 1 is discharged by discharging the discharge gas inside the gas chamber 8 ⁇ This generates a discharge plasma A pair of discharge electrodes 2a, 2b and an electron in the discharge gas placed in the hermetic vessel 1 And an electron source 3 for supplying This discharge device (ultraviolet lamp) emits ultraviolet rays by discharging the discharge gas in the hermetic vessel 1.
  • a discharge gas for example, a rare gas such as xenon
  • the discharge device is a material (for example, Cs, Ag, BaO, MgO, and the like) that is disposed in the hermetic vessel 1 and emits secondary electrons into the discharge gas by collision of electrons emitted from the electron source 3. It has a secondary electron emission part 25 containing morphous carbon, diamond, etc.).
  • the discharge device according to Embodiment 8 is a straight tube type ultraviolet lamp.
  • the hermetic container 1 is formed in a cylindrical shape with a material having translucency, such as glass and translucent ceramic.
  • Discharge electrodes 2a and 2b are disposed in the airtight container 1 in the vicinity of both ends in the longitudinal direction.
  • the secondary electron emission portion 25 is disposed on the side of one discharge electrode 2a.
  • the electron source 3 is arranged at a position farther from the plasma generation space 8 than the secondary electron emission unit 25.
  • the discharge device when the electron source 3 is driven, electrons emitted from the electron source 3 are supplied into the discharge gas.
  • the arrow on the right side of the electron source 3 indicates the flow of electrons emitted from the electron source 3.
  • the arrow on the right side of the secondary electron emitter 25 indicates the electrons emitted from the electron source 3 and passed through the secondary electron emitter 25 and the secondary electrons emitted from the secondary electron emitter 25. It shows the flow of electrons.
  • the electron source 3 Before the voltage is applied between the discharge electrodes 2a and 2b, the electron source 3 is started to supply electrons to the discharge gas, thereby reducing the discharge start voltage between the discharge electrodes 2a and 2b. Can. Further, if the electron source 3 is driven even after a voltage is applied between the discharge electrodes 2a and 2b, the stability of the discharge plasma can be improved and the discharge sustaining voltage can be reduced. , Power consumption can be reduced.
  • a pair of discharge electrodes 2a, 2b arranged inside the hermetic container 1 constitutes energy supply means for supplying energy for discharging discharge gas to generate discharge plasma.
  • the electron source 3 and the secondary electron emission unit 25 may constitute an auxiliary device that assists the generation of discharge plasma.
  • the configuration and function of the electron source 3 according to Embodiment 8 are basically the same as the configuration and function of the electron source 3 according to Embodiment 1.
  • the configuration and function of the drift layer 16 of the electron source element 3a according to Embodiment 8 are also the same as the configuration and function of the drift layer 16 according to Embodiment 1 (see FIG. 2B).
  • the drive voltage applied to the electron source 3 may be a constant DC voltage or a pulsed voltage. Also, if the drive voltage is a pulse voltage, the drive Apply a dynamic voltage, and sometimes apply a reverse bias voltage.
  • Electron emission in the electron source element 3a according to the eighth embodiment occurs in the same model as the electron emission in the electron source element 3a according to the first embodiment.
  • the insulating film can be formed using an acid process, a nitriding process, or an oxynitriding process.
  • the secondary electron emission unit 25 is disposed in the plasma generation space 8 in which discharge plasma is generated in the hermetic vessel 1.
  • the secondary electron emission section 25 has a structure in which a secondary electron emission film having a material force for emitting secondary electrons is installed on the substrate 26 shown in FIG. 12A.
  • the base material 21 shown in FIG. 12A is not limited to the form of the force base material 26 in which a large number of circular holes 26b are formed in a flat plate member 26a.
  • a flat plate member 26a may be formed with a number of rectangular holes 26b. Further, as shown in FIG. 12C, a mesh shape may be used. If a secondary electron emission film is deposited on the side facing the electron source 3 at least, the electrons emitted from the electron source 3 and the secondary electrons emitted from the secondary electron emission film are separated. Electrons can be supplied to the space opposite to the electron source 3 with respect to the base material 26.
  • a base material 26 shown in FIG. 12A is obtained by forming a hole 26b in a flat plate member 26a as shown in FIG. 13A.
  • the hole 26b may be formed in the curved plate member 26a as shown in FIG. 13B, or the hole 26b may be formed in the spherical plate member 26a as shown in FIG. 13C. It ’s good.
  • the discharge gas contains electrons. Not only the electrons emitted from the source 3 but also the secondary electrons emitted from the secondary electron emission unit 25 are supplied. For this reason, the electron source 3 can be driven under relatively gentle driving conditions with a smaller amount of emitted electrons than when only the electron source 3 supplies strong electrons.
  • the secondary electron emission unit 25 is disposed in the space where the discharge plasma is generated in the hermetic container 1, the secondary electron emission unit 25 collides with electrons in the discharge plasma. Secondary electrons are also emitted. This can also reduce the electron emission amount of the electron source 3. Therefore, the electric As a result, the life of the discharge device 3 and the discharge device can be extended, and the reliability can be improved.
  • the base material 26 is formed of a conductive material (for example, nickel, stainless steel, aluminum, etc.), a driving voltage is applied to the electron source element 3a, and the base material 26 is applied to the surface electrode 17. If an acceleration voltage is applied between the base material 26 and the surface electrode 17 so as to be on the high potential side, the electron source element 3a is driven by the driving voltage and emits electrons through the surface electrode 17. Then, the electrons emitted through the surface electrode 17 are accelerated by the acceleration voltage and irradiated to the secondary electron emission film. Therefore, by appropriately setting the acceleration voltage, the secondary electron efficiency can be increased and the amount of secondary electrons emitted can be increased. For this reason, the amount of electrons emitted from the electron source 3 can be reduced, and the life of the electron source 3 and thus the discharge device can be extended and the reliability can be improved.
  • a driving voltage is applied to the electron source element 3a
  • the base material 26 is applied to the surface electrode 17. If an acceleration voltage is applied between the base material 26 and the surface electrode 17 so as
  • Embodiment 9 of the present invention will be described below.
  • the basic configuration of the discharge device according to the ninth embodiment or the auxiliary device thereof is almost the same as that of the auxiliary device according to the eighth embodiment, and as shown in FIG. 14, the secondary electron emission unit 25 is a pair. The only difference is that it also serves as one of the discharge electrodes 2a and 2b.
  • the basic configuration of the discharge device according to the tenth embodiment or the auxiliary device thereof is substantially the same as that of the auxiliary device according to the eighth embodiment, and is disposed so as to surround the electron source 3 as shown in FIG.
  • the plasma ion force also differs only in that a protective cover 27 is provided to protect the electron source 3.
  • the protective cover 27 is formed in a rectangular parallelepiped shape with an insulating material (for example, insulating grease such as fluorine-based grease, insulating ceramic, etc.), and one surface thereof ( The lower surface is fully open.
  • the protective cover 27 faces the electron emission surface of the electron source 3. It has a front wall.
  • the front wall of the protective cover 27 is provided with an opening 28 for allowing electrons emitted from the electron source 3 to pass therethrough.
  • the secondary electron emission part 25 is arranged so as to overlap the front wall part of the protective cover 27. Therefore, the secondary electron emission unit 25 can be exposed to the discharge plasma while preventing the electron source 3 from being exposed to the discharge plasma.
  • a mesh-like base material 26 (see FIG. 12C) according to the eighth embodiment may be used. In this case, by appropriately setting the mesh size, the electrons emitted from the electron source 3 can be passed, and the ion force of the discharge plasma can protect the electron source 3.
  • the secondary electron emitting portion 25 preferably has its base material 26 formed of a conductive material.
  • the potential of the substrate 26 is appropriately set so as to be the same potential as the surface electrode 17 (see FIG. 2A) or a high potential with respect to the surface electrode 17.
  • the plasma passes through the mesh-like secondary electron emission part 25 while allowing the electrons emitted from the electron source 3 to pass sufficiently. It is possible to prevent the electron source 3 from being struck and damaged (damaged).
  • the electron source 3 can be protected from the ion source of the discharge plasma by the protective cover 27, and the lifetime can be further improved and the reliability can be improved. Can be achieved.
  • Embodiment 11 of the present invention is almost the same as that of the auxiliary device according to the tenth embodiment, and as shown in FIG. The only difference is that it is disposed in the opening portion 28 of 27 and also serves as one of the pair of discharge electrodes 2a, 2b.
  • the secondary electron emission portion 25 also serves as the negative discharge electrode 2a, the number of parts of the discharge device is reduced and the structure is simplified. In addition, the manufacturing process can be simplified, and as a result, the cost of the discharge device can be reduced.
  • the secondary electron emission member 25 is formed on the base material 26.
  • the substrate 26 may be partially or entirely formed of a secondary electron emission material.
  • Embodiment 12 of the present invention is substantially the same as that of the discharge device or the auxiliary device according to the tenth embodiment, and is different only in the following points.
  • the secondary electron emission portion 25 is arranged so that the front wall force of the protective cover 27 is also separated.
  • An opening 28 is formed on the front wall of the protective cover 27.
  • a mesh-like protective member 29 having a conductive material force is disposed on the front wall of the protective cover 27 facing the electron source 3. Other points are the first embodiment.
  • the secondary electron emitter 25 can be more reliably exposed to the discharge plasma.
  • a voltage is applied to the secondary electron emitter 25 so as to have a higher potential than that of the protective member 29, and this voltage is applied so that the secondary electron emission efficiency of the secondary electron emitter 25 is almost the maximum value. If set to, secondary electrons can be generated efficiently, and the amount of electrons emitted from the electron source 3 can be more effectively reduced.
  • the potential of the protective member 29 is set to the same potential as that of the electron source 3, or the potential of the protective member 29 is set higher than the surface electrode 17 of the electron source 3.
  • the thirteenth embodiment of the present invention will be described below.
  • the basic configuration of the discharge device (light emitting device) or the auxiliary device according to the thirteenth embodiment is almost the same as that of the auxiliary device according to the twelfth embodiment, and only the following points are different. .
  • a plurality of secondary electron emission portions 25 are provided.
  • three mesh-like secondary electron emission portions 25 are arranged in series in a direction (normal direction) perpendicular to the electron emission surface (the upper surface in FIG. 18) of the electron source 3. .
  • the other points are the same as in the twelfth embodiment.
  • the auxiliary device according to Embodiment 13 can increase the amount of secondary electrons supplied to the discharge gas. Therefore, the amount of electrons emitted from the electron source 3 can be further reduced, and the life of the electron source 3 or the discharge device can be extended and the reliability can be improved more effectively.
  • a plurality of secondary electron emission portions 25 are arranged in series in a direction perpendicular to the electron emission surface of the electron source 3. You may arrange
  • the hermetic container 1 is cylindrical, but the shape of the hermetic container 1 is not limited to a cylindrical shape.
  • it may be a spherical shape like a light bulb, a rectangular parallelepiped shape or a cubic shape.
  • it may be a flat type airtight container composed of a pair of flat plates and a frame located between both flat plates.
  • Embodiments 8 to 13 as shown in FIG. 19A, as an energy supply means, a pair of discharge electrodes 2a disposed in the cylindrical airtight container 1 so as to be spaced apart from each other in the longitudinal direction. 2b is provided.
  • the arrangement or configuration of the energy supply means is not limited to this.
  • 19B to 19J show the configuration of other energy supply means.
  • an induction coil 23 wound around the airtight container 1 is provided outside the cylindrical airtight container 1.
  • a pair of planar discharge electrodes 2c arranged along the longitudinal direction is provided outside the cylindrical airtight container 1.
  • FIG. 19E two discharge electrodes 2a and 2b arranged one by one in the vicinity of both ends in the longitudinal direction inside the cylindrical airtight container 1, and outside the airtight container 1
  • One or a plurality of discharge electrodes 2c arranged in an annular shape are provided.
  • FIG. 19G two pairs of discharge electrodes 2a and 2b arranged inside a cylindrical airtight container 1 are provided.
  • Discharge electrode 2c is provided.
  • a pair of discharge electrodes 2a and 2b arranged in a perpendicular direction to each other are provided inside a rectangular parallelepiped hermetic container 1.
  • a pair of discharge electrodes 2a and 2b arranged in parallel with each other are provided inside the hermetic container 1.
  • the voltage applied to the energy supply means may be appropriately selected from DC voltage, AC voltage, pulse voltage, and the like.
  • a plurality of discharge electrodes 2c are connected so that adjacent discharge electrodes 2c belong to different electrode groups, and two sets of electrodes Divide into groups.
  • FIGS. 20B and 20C if the rectangular wave AC voltage VI applied to one electrode group and the rectangular wave AC voltage V2 applied to the other electrode group are in opposite phases, The length of the airtight container 1 in the longitudinal direction is relatively long! Even in a case, discharge plasma can be generated over almost the entire length of the hermetic vessel 1.
  • the energy supply means shown in FIG. 19H for example, as shown in FIG. 21A, a plurality of discharge electrodes 2c are connected so that adjacent discharge electrodes 2c belong to different electrode groups. However, it can be divided into two electrode groups. In this case, as shown in FIGS. 21B and 21C, the rectangular wave AC voltage VI applied to one electrode group and the rectangular wave AC voltage V2 applied to the other electrode group should be in opposite phases. ,.
  • an ultraviolet lamp is exemplified as the discharge device, but the discharge device is not limited to the ultraviolet lamp.
  • a fluorescent lamp for lighting or a plasma display panel may be used.
  • a phosphor layer 24 that emits light by being excited by ultraviolet rays may be provided at an appropriate portion of the inner surface of the hermetic container 1.
  • the auxiliary device is not shown.
  • the hermetic container 1 of the discharge device (ultraviolet lamp) is entirely formed of a translucent material. However, as shown in FIG. 23 or FIG.
  • the hermetic container 1 may be formed of a translucent plate lb made of a translucent material (for example, glass).
  • a translucent plate lb made of a translucent material (for example, glass).
  • ultraviolet rays are radiated to the outside of the airtight container 1 through the light transmitting plate lb.
  • the light is emitted to the outside of the hermetic vessel 1 through the visible light transmitting plate lb emitted from the phosphor layer 24.
  • the shape of the airtight container 1 is cylindrical. However, for example, as shown in FIG. 25, the airtight container 1 may have a rectangular parallelepiped shape.
  • the electron source 3 is disposed at a position away from the plasma generation space 8, and the electron emission surface of the electron source 3 is disposed so as not to be exposed to the discharge plasma generated in the plasma generation space 8. can do. Therefore, the electron source 3 can be prevented from being damaged by the ions of the discharge plasma, and the life of the electron source 3 and thus the discharge device can be extended and the reliability can be improved.
  • xenon gas is used as the discharge gas sealed in the hermetic container 1.
  • the discharge gas is not limited to xenon gas. Any gas may be used as long as it causes discharge by supplying energy, for example, Ar gas, He gas, Ne gas, Kr gas, N gas, CO gas, Hg vapor
  • the electron source 3 according to the eighth to thirteenth embodiments as described in the second embodiment, a semiconductor substrate such as a silicon substrate is used instead of the insulating substrate 14, and the semiconductor substrate and the semiconductor substrate You may comprise a lower electrode with the electroconductive layer laminated
  • the electron source 3 according to the eighth to thirteenth embodiments may use other types of electron sources, for example, MIM type electron source, MIS type electron source, etc. instead of the force BSD which is BSD!
  • Embodiment 14 of the present invention will be described below.
  • the basic configuration of the discharge device or the auxiliary device according to the fourteenth embodiment is almost the same as that of the auxiliary device according to the eighth embodiment.
  • the electron source 3 is arranged so that the electron emission surface (surface electrode 17) faces the inner peripheral surface of the airtight container 1 with a slight inclination. Have been. That is, the electron source 3 is arranged such that its electron emission surface is not directly exposed to the discharge plasma. Further, the secondary electron emission portion 25 is disposed on the inner peripheral surface of the hermetic container 1 so as to be positioned obliquely in front of the electron emission surface of the electron source 3. Other points are the same as in the eighth embodiment. In FIG. 26, an arrow R1 indicates an electron emitted from the electron source 3, and an arrow R2 indicates a secondary electron emitted from the secondary electron emission unit 25.
  • the discharge starting voltage or the sustaining voltage is reduced by the secondary electrons emitted from secondary electron emitting portion 25.
  • the electron emission surface (surface electrode) of the electron source 3 is opposite to the discharge plasma 10 between the discharge electrodes 2a and 2b, it is effective to cause damage to the electron source 3 due to the discharge plasma. Can be prevented or suppressed.
  • the secondary electron emission unit 25 prevents the ion source 3 from being damaged by preventing the intrusion of ions.
  • the electron source 3 is turned away from the discharge plasma 10. This prevents the electron source 3 from being damaged by ions.
  • the discharge device according to Embodiment 15 is a discharge lamp La.
  • the discharge lamp La has an airtight container 1 in which a discharge gas (here, xenon gas) is sealed, and a pair of discharge electrodes 2a and 2b arranged in the airtight container 1.
  • Discharge electrode 2a is an anode electrode
  • discharge electrode 2b is a force sword electrode (in Embodiment 15, “discharge electrode 2a” and “discharge electrode 2b” are appropriately referred to as “annode electrode 2a”, respectively.
  • Power Sword Electrode 2b.” the discharge gas is not limited to xenon gas, for example, Ar gas, He gas, Ne gas, Kr gas, N gas, CO gas, H
  • gVapor or a mixed gas having two or more of these can be used as appropriate depending on the application of the discharge device.
  • the discharge device according to Embodiment 15 is an auxiliary device that assists the generation of discharge plasma, and an electron source 3 that supplies electrons into the discharge gas, and an electron source 3 First and second protective members 31 and 32 are provided.
  • Electron source 3 is airtight In the vessel 1, it is disposed outside the desired discharge plasma generation space 8 between the anode electrode 2 a and the force sword electrode 2 b and in the vicinity of the force sword electrode 2 b.
  • Both protective members 31 and 32 are spaced apart from the electron source 3 on the electron emission side of the electron source 3, and electrons are generated from the ions of the discharge plasma generated in the discharge plasma generation space 8 in the hermetic vessel 1.
  • Both protective members 31 and 32 also serve as grid electrodes for accelerating electrons emitted from the electron source 3.
  • the protective members 31 and 32 are formed with a plurality of openings 31a and 32a for passing electrons emitted from the electron source 3, respectively.
  • the discharge lamp La is a straight tube type discharge lamp, and the hermetic vessel 1 is formed in a cylindrical shape with a translucent material (for example, glass, translucent ceramic, etc.).
  • the anode 2a is disposed near one end of the hermetic container 1 in the longitudinal direction (left side in FIG. 27A), and the force sword electrode 2b is disposed near the other end (right side in FIG. 27A).
  • the auxiliary device composed of the electron source 3 and the two protection members 31 and 32 is disposed in the vicinity of the force sword electrode 2b on the side opposite to the anode electrode 2a with respect to the force sword electrode 2b.
  • the electron source 3 and the protective members 31 and 32 are disposed outside the discharge plasma generation space 8 in the hermetic vessel 1.
  • the configuration and function of the electron source 3 according to Embodiment 15 are basically the same as the configuration and function of the electron source 3 according to Embodiment 1.
  • the film thickness of the conductive thin film constituting the surface electrode 17 is preferably set to about 10 to 15 nm.
  • the conductive thin film may be either a single layer film or a multilayer film.
  • the configuration and function of the drift layer 16 of the electron source element 3a according to Embodiment 15 are also the same as the configuration and function of the drift layer 16 according to Embodiment 1 (see FIG. 2B).
  • Electron emission in the electron source element 3a according to the fifteenth embodiment also occurs in the same model as the electron emission in the electron source element 3a according to the first embodiment.
  • the insulating film can be formed using an acid process, a nitridation process, or an oxynitridation process.
  • Both protective members 31, 32 are each formed in a net shape from a conductive material (eg, nickel, aluminum, stainless steel, etc.), and each net portion of the net shape is emitted from the electron source 3. Openings 31a and 32a are formed for passing the generated electrons.
  • both the protective members 31 and 32 have a net shape, but the shape of the protective members 31 and 32 is not limited to the net shape.
  • a flat conductive substrate provided with openings 31a and 32a may be used.
  • the driving method of the auxiliary device according to the fifteenth embodiment is as follows. That is, for example, a DC voltage of about 14 V is applied between the surface electrode 17 and the lower electrode 15 from the drive power supply. At the same time, a DC voltage of about 100 V is applied between the first protective member 31 and the surface electrode 17 from the first acceleration power source (not shown), while the second acceleration power source. A DC voltage of about 90 V, for example, is applied between the second protective member 32 and the surface electrode 17 (not shown). As a result, electrons emitted from the electron source 3 are accelerated by the first protective member 31 and the second protective member 32, and enter the discharge plasma generation space 8 between the anode electrode 2a and the force sword electrode 2b. Supplied.
  • the potential of each component when the auxiliary device is driven is set as follows. That is, the potential relationship between the first protection member 31 and the second protection member 32 is set so that the potential of the first protection member 31 and the potential of the second protection member 32 are different from each other.
  • the potential of the second protective member 32 is set to a potential lower than that of the anode electrode 2a and higher than that of the force sword electrode 2b.
  • the potential of the second protective member 32 is such that the potential difference between the second protective member 32 and the anode electrode 2a (hereinafter referred to as “first potential difference”) is the second protective member 32 and the anode electrode.
  • second potential difference t the potential difference between the second protective member 32 and the force sword electrode 2b
  • second potential difference t the potential difference between the second protective member 32 and the force sword electrode 2b
  • the output voltage of the power source V that applies a voltage between the anode electrode 2a and the force sword electrode 2b, the output voltage of the drive power source, the output voltage of the first acceleration power source, and the second
  • the output voltage of the acceleration power source is controlled by a control unit (not shown) having a microcomputer power, for example.
  • the control unit controls the potentials of the protective members 31, 32, the potential of the anode electrode 2a, and the potential of the force sword electrode 2b so that the above-described potential relationship is established.
  • both protection members 31, 32 have openings 31a, 32a for allowing electrons emitted from the electron source 3 to pass through, respectively. Yes.
  • the respective aperture ratios of the protective members 31 and 32 appropriately, the electrons emitted from the electron source 3 can be prevented from colliding with the electron source 3 while the ions emitted from the electron source 3 are suppressed. It is possible to suppress the collision with 2 and to be captured, and to reduce the discharge start voltage.
  • the second protective member 32 is lower than the potential of the anode electrode 2a and higher than the potential of the cathode electrode 2b, the second protective member 32 and the anode electrode 2a or force sword It is possible to prevent unnecessary discharge plasma from occurring between the electrode 2b. For this reason, the occurrence of damage to the electron source 3 can be suppressed, and the life of the electron source 3 can be extended.
  • the potential relationship is set so that the potential of the second protective member 32 is lower than the potential of the first protective member 31. For this reason, while suppressing the electrons that have passed through the opening 31a of the first protective member 31 from being captured by the second protective member 32, the air gap between the anode electrode 2a and the force sword electrode 2b in the hermetic container 1 is reduced. It is possible to reduce damage to the electron source 3 due to the ions of the discharge plasma generated in the plasma.
  • the aperture ratio of the second protection member 32 is smaller than the aperture ratio of the first protection member 31. For this reason, it is possible to more effectively reduce damage to the electron source 3 caused by ions of the discharge plasma generated between the anode electrode 2a and the force sword electrode 2b in the hermetic container 1.
  • the opening 31a of the first protective member 31 is formed in a shape corresponding to the electron emission surface of the electron source 3, the electrons emitted from the electron source 3 are transferred to the first protective member 31 and the electron source. The probability that electrons emitted from the electron source 3 are captured by the first protective member 31 can be reduced while accelerating by the electric field between the first and second electrons.
  • the discharge plasma is generated between the anode electrode 2a and the force sword electrode 2b when the relationship represented by the following formula 1 is satisfied. It should be noted that the discharge between the anode electrode 2a and the force sword electrode 2b is maintained by the collision of ions with the force sword electrode 2b to generate secondary electrons. This principle is the same as that of the force sword electrode 2b. The same applies to the second protective member 32. y> l / (e ad -l) Equation 1 d: Distance between the anode and force sword electrodes
  • a material having a low secondary electron emission efficiency for ions may be used.
  • Desirable materials of this type include, for example, Fe, Co, Ni, Cu, Zn, Ga, Ge, C, Si ⁇ Mo, Tc, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Te , Re, Os, Ir, Pt, Au, Hg, Tl, Pb, Bi or Po, or oxides, nitrides, and carbides thereof.
  • the second protective member 32 preferably has a low secondary electron emission efficiency with respect to ions, but in order to improve the electron emission efficiency of the auxiliary device force, it is preferable that the secondary electron emission efficiency with respect to the electron is high. desirable.
  • the electron source 3 according to Embodiment 15 is a BS D that emits electrons by a ballistic electron emission phenomenon.
  • electron source 3 is not limited to BSD.
  • MIM Type electron sources MIM Type electron sources, MIS type electron sources, Spindt type electron sources, SCE (Surface Conduction Electronitter) type electron sources, electron sources using carbon nanotube emitters, and more! ⁇ .
  • SCE Surface Conduction Electronitter
  • electron sources using carbon nanotube emitters and more! ⁇ .
  • BSD Surface Conduction Electronitter
  • the discharge device is a discharge lamp.
  • This discharge lamp includes a hermetic container 1 in which a discharge gas (for example, a rare gas such as argon) as a discharge medium is sealed, a pair of discharge electrodes 2a and 2b disposed in the hermetic container 1, and an airtight container. 1 is provided with an electron source 3 that is disposed in 1 and supplies electrons into the discharge gas, and a grid electrode 35 that is disposed in the airtight container 1 so as to face the electron source 3.
  • This discharge lamp emits visible light by causing the discharge electrodes 2a and 2b to discharge in the discharge gas in the hermetic vessel 1.
  • Both discharge electrodes 2 a and 2 b apply an electric field to the discharge gas in the hermetic vessel 1 to generate a discharge plasma in a desired discharge plasma generation space 8 in the hermetic vessel 1.
  • the grid electrode 35 has a plurality of openings 35a for allowing electrons emitted from the electron source 3 to pass therethrough.
  • the grid electrode 35 is provided to accelerate the electrons emitted from the electron source 3.
  • the electron source 3 and the grid electrode 35 constitute an auxiliary device that assists the generation of discharge plasma in the discharge plasma generation space 8.
  • the discharge device according to Embodiment 16 is a straight tube type discharge lamp.
  • the airtight container 1 is formed in a cylindrical shape from a light-transmitting material (for example, glass, light-transmitting ceramic, etc.).
  • Discharge electrode 2a arranged near one end of the hermetic container 1 in the longitudinal direction (left side in FIG. 28) constitutes an anode electrode, and discharge arranged near the other end (right side in FIG. 28)
  • the electrode 2b constitutes a force sword electrode (in the sixteenth embodiment, “discharge electrode 2 aj and“ discharge electrode 2b ”are appropriately referred to as“ anode electrode 2a ”and“ force sword electrode 2b ”t, respectively)
  • the electron source 3 and the grid electrode 35 and the auxiliary device that also has a force are arranged in the vicinity of the force sword electrode 2b on the side opposite to the anode 2a. In short, electric The child source 3 and the grid electrode 35 are arranged outside the discharge plasma generation space 8 in the hermetic vessel 1.
  • the electrons emitted from the electron source 3 can be supplied into the discharge gas. Therefore, before applying a voltage from the electric field application voltage source V to the anode electrode 2a and the force sword electrode 2b,
  • the configuration and function of the electron source 3 according to Embodiment 16 are basically the same as the configuration and function of the electron source 3 according to Embodiment 1.
  • the film thickness of the conductive thin film constituting the surface electrode 17 is preferably set to about 10 to 15 nm.
  • the conductive thin film may be either a single layer film or a multilayer film.
  • the configuration and function of the drift layer 16 of the electron source element 3a according to Embodiment 16 are the same as the configuration and function of the drift layer 16 according to Embodiment 1 (see FIG. 2B).
  • the driving voltage applied to the electron source 3 may be a constant DC voltage or a pulsed voltage. Also, if the drive voltage is a pulse voltage, it may be possible to apply a reverse bias voltage after applying the drive voltage!
  • Electron emission in the electron source element 3a according to the sixteenth embodiment also occurs in the same model as the electron emission in the electron source element 3a according to the first embodiment.
  • the insulating film can be formed using an acid process, a nitridation process, or an oxynitridation process.
  • the grid electrode 35 is made of a conductive material (for example, nickel, aluminum, stainless steel, etc.) in a net shape. Each mesh-shaped mesh portion constitutes an opening 35a for allowing electrons emitted from the electron source 3 to pass through.
  • a nickel mesh having a side of a square mesh of 0.6 mm and a wire diameter of 0.25 mm, which is called 30 mesh, is used. Yes.
  • the mesh size That is, the size of the opening 35a is not limited to this. Any size can be used as long as the electrons emitted from the electron source 3 can pass through and the intrusion of ions of the discharge plasma power generated in the discharge plasma generation space 8 can be suppressed! / ⁇ .
  • the length of one side of the square opening 35a is 0. lmn! It may be set appropriately within a range of about 2 mm.
  • the grid electrode 35 is formed in a net shape, but the grid electrode 35 is not limited to the net shape.
  • an opening having the same shape as the surface electrode 17 may be provided in a portion of the flat conductive substrate facing the surface electrode 17.
  • the potential relational force between grid electrode 35, force sword electrode 2b, and anode electrode 2a is greater than the potential of force sword electrode 2b.
  • an output voltage of an electric field applying voltage source V that applies a voltage between the anode electrode 2a and the force sword electrode 2b, and a driving voltage is applied between the surface electrode 17 and the lower electrode 15.
  • the above potential relationship is satisfied by appropriately setting the output voltage of the child acceleration power source Vc and the output voltage of the power source V that applies a voltage between the grid electrode 35 and the force sword electrode 2b.
  • control unit including a computer (not shown).
  • discharge gas pressure the pressure of argon gas sealed in the hermetic container 1
  • electrode distance The distance between the anode electrode 2a and the force sword electrode 2b (hereinafter referred to as “interelectrode distance”) is set to 10 cm.
  • the distance between the grid electrode 35 and the force sword electrode 2b is set to 5 mm.
  • the distance between the grid electrode 35 and the surface electrode 17 is set to 5 mm.
  • the voltage applied between the anode electrode 2a and the force sword electrode 2b is set to a voltage lower than 200V.
  • the voltage between the anode electrode 2a and the force sword electrode 2b reaches 200V, a discharge plasma is generated in the discharge plasma generation space 8 between the anode electrode 2a and the force sword electrode 2b. Is done.
  • the potential difference between the anode electrode 2a and the grid electrode 35 is 100V, and the distance between the anode electrode 2a and the grid electrode 35 is greater than the distance between the anode electrode 2a and the force sword electrode 2b. Since it is somewhat long, the voltage between the anode electrode 2a and the grid electrode 20 does not reach the discharge start voltage. Therefore, no unnecessary discharge plasma is generated between the anode 2a and the grid electrode 20!
  • the potential difference between anode electrode 2a and grid electrode 20 is smaller than the potential difference between anode electrode 2a and force sword electrode 2b.
  • a voltage is applied between the anode electrode 2a and the force sword electrode 2b to generate a discharge plasma in a desired discharge plasma generation space 8
  • unnecessary discharge plasma is generated between the anode electrode 2a and the grid electrode 35.
  • the above potential relationship is set so as to be smaller than the potential difference force between the potential of the anode electrode 2a and the potential of the grid electrode 35 and the discharge start voltage between the anode electrode 2a and the grid electrode 35.
  • the potential of the grid electrode 35 is increased in order to reduce the potential difference between the anode electrode 2a and the grid electrode 35, unnecessary discharge plasma is generated between the grid electrode 35 and the surface electrode 17 to generate electrons.
  • Source 3 can be prevented from being damaged.
  • Embodiment 16 when the voltage of anode electrode 2a is increased in order to increase the luminance of the discharge device (discharge lamp), the potential difference between anode electrode 2a and grid electrode 35 starts to discharge. There is a possibility that unnecessary discharge plasma is generated due to the voltage exceeding the voltage.
  • the potential of the anode electrode 2a when the potential of the anode electrode 2a is increased to 300V, the potential difference between the anode electrode 2a and the grid electrode 35 becomes 200V.
  • the discharge start voltage force between the anode electrode 2a and the grid electrode 35 is the same as the discharge start voltage between the anode electrode 2a and the force sword electrode 2b, then the anode electrode 2a and the grid electrode 35 Unnecessary discharge plasma may be generated between them.
  • the discharge start voltage between the anode electrode 2a and the grid electrode 35 is between the anode electrode 2a and the force sword electrode 2b. It is slightly higher than the discharge start voltage.
  • the potential of the grid electrode 35 may be increased.
  • the discharge gas pressure argon gas pressure
  • the discharge gas pressure is about lOPa
  • the discharge gas pressure is about lOOPa ⁇ : LkPa
  • unnecessary discharge plasma may be generated in the space between the grid electrode 35 and the surface electrode 17. Arise.
  • the surface electrode 17 and the lower part of the electron source 3 are adjusted in accordance with the increase in the potential of the grid electrode 35.
  • the potential of the electrode 15 may be increased.
  • force electron source 3 using BSD as electron source 3 is not limited to BSD.
  • an MIM type electron source, a Spindt type electron source, or an electron source using a carbon nanotube may be used.
  • the upper electrode (surface electrode) constitutes the electron emission portion.
  • a Spindt-type electron source a conical emitter forms the electron emission section.
  • the carbon nanotubes constitute an electron emission portion.
  • the auxiliary device having the electron source 3 and the grid electrode 35 is disposed in the airtight container 1 in the vicinity of the force sword electrode 2b.
  • the auxiliary device may be arranged in the vicinity of the anode electrode 2a, not in the vicinity of the force sword electrode 2b.
  • the auxiliary device has the anode electrode 2a in the hermetic vessel 1 outside the plasma generation space 8 between the anode electrode 2a and the force sword electrode 2b. Located nearby.
  • the grid electrode 35 is arranged closer to the anode electrode 2a than the electron source 3. In this way, the auxiliary device is placed outside the plasma generation space 8. Therefore, the auxiliary device can be prevented from being exposed to the discharge plasma generated in the plasma generation space 8. Further, since the auxiliary device is disposed near the anode electrode 2a and the grid electrode 35 is disposed closer to the anode electrode 2a than the electron source 3, it is emitted from the electron source 3 and enters the plasma generation space 8. Can increase the amount of electrons reaching
  • the shape of the hermetic container 1 is cylindrical, but the shape of the hermetic container 1 is not limited to this.
  • the airtight container 1 may have a spherical shape like a light bulb, or may have a rectangular parallelepiped shape or a cubic shape.
  • the airtight container 1 may be a flat type constituted by a pair of flat plates and a frame interposed between the flat plates.
  • the energy supply means is disposed in the cylindrical airtight container 1 so as to be separated in the longitudinal direction of the pair of discharge electrodes 2a, 2b force hermetic container 1.
  • one of the pair of discharge electrodes 2a and 2b may be arranged outside the hermetic container 1.
  • a plurality of pairs of discharge electrodes 2a and 2b may be provided.
  • a discharge lamp using argon gas will be exemplified as a discharge device.
  • the discharge device is not limited to a discharge lamp, and may be a fluorescent lamp for illumination, a plasma display panel, or the like.
  • a fluorescent lamp a phosphor layer that emits light by being excited by ultraviolet rays or the like may be provided at an appropriate part of the inner surface of the hermetic container 1.
  • argon gas is used as the discharge gas sealed in the hermetic container 1.
  • the discharge gas sealed in the hermetic vessel 1 is not limited to argon gas, and any gas may be used as long as it causes discharge by supplying energy.
  • discharge gas He gas, Ne gas, Xe gas, Kr gas, N gas, CO gas
  • Sm, Hg vapor, or a mixed gas thereof may be used.
  • the discharge plasma generation auxiliary device reduces the discharge start voltage, discharge sustain voltage, etc. of the discharge plasma device or the light emitting device and stabilizes the discharge plasma while suppressing damage caused by ion bombardment. It is useful as a means for making it suitable for use in fluorescent lamps, ultraviolet lamps, plasma display panels and the like.

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  • Discharge Lamps And Accessories Thereof (AREA)

Abstract

La présente invention concerne un dispositif de décharge de plasma qui comprend un tube de décharge (A). Le tube de décharge (A) comporte un récipient hermétique (1) rempli d’un gaz de décharge. Le dispositif hermétique (1) contient une paire d’électrodes de décharge (2a, 2b), une source d’électrons (3) destinée à fournir des électrons dans le gaz de décharge et une électrode à grille (4) opposée à la surface d’émission d’électrons de la source d’électrons (3). Le dispositif de décharge de plasma comprend une source d’énergie (5) destinée à appliquer une tension aux électrodes de décharge (2a, 2b), des moyens de détection de décharge (6) destinés à détecter un état de décharge du tube de décharge (A) et des moyens de commande (7) destinés à commander le potentiel de la source d’électrons (3) de manière à supprimer la collision d’ions positifs sur la source d’électrons (3) lorsqu’un début de décharge du tube de décharge (A) est détecté par les moyens de détection de décharge (6). L’électrode à grille (4) comporte une ouverture destinée à faire passer les électrons émis à partir de la source d’électrons (3). La source d’électrons (3) et l’électrode à grille (4) forment un dispositif auxiliaire de génération de plasma.
PCT/JP2006/316729 2005-08-26 2006-08-25 Dispositif auxiliaire de génération de plasma par décharge WO2007023945A1 (fr)

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JP2005-246801 2005-08-26
JP2005-246800 2005-08-26
JP2005246801A JP5102442B2 (ja) 2005-08-26 2005-08-26 放電プラズマ生成補助装置

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Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53121454A (en) * 1977-03-31 1978-10-23 Toshiba Corp Electron source of thin film electric field emission type and its manufacture
JPS63150837A (ja) * 1986-12-16 1988-06-23 Canon Inc 電子放出装置
JPH0473837A (ja) * 1990-07-13 1992-03-09 Futaba Corp 電子放出素子
JPH04286855A (ja) * 1991-03-15 1992-10-12 Matsushita Electric Works Ltd 発光素子
JPH07235257A (ja) * 1993-12-27 1995-09-05 Canon Inc 電子源、電子線発生装置、及び画像形成装置
JPH08222158A (ja) * 1995-02-17 1996-08-30 Olympus Optical Co Ltd 薄形表示装置
JPH09274845A (ja) * 1996-04-03 1997-10-21 Dainippon Printing Co Ltd 電子放出素子と電子放出素子用収束電極およびその製造方法
JPH1131452A (ja) * 1997-07-08 1999-02-02 Nec Corp 電界放出型冷陰極およびその製造方法
JPH11311975A (ja) * 1998-04-30 1999-11-09 Toshiba Corp 放電型平面表示装置
JPH11329213A (ja) * 1997-10-29 1999-11-30 Matsushita Electric Works Ltd 電界放射型電子源およびその製造方法および平面発光装置およびディスプレイ装置および固体真空デバイス
JP2002150944A (ja) * 2000-11-14 2002-05-24 Matsushita Electric Works Ltd 電子エミッタ付発光装置
JP2002203471A (ja) * 2000-12-19 2002-07-19 Iimu Jisuun フィールド・エミッタ
JP2002298778A (ja) * 2001-03-27 2002-10-11 Delta Optoelectronics Inc 冷陰極螢光平面灯
JP2004152591A (ja) * 2002-10-30 2004-05-27 Mitsubishi Pencil Co Ltd 電界放出型ランプ
JP2004200896A (ja) * 2002-12-17 2004-07-15 Anritsu Corp 誘電体漏れ波アンテナ
JP2004207066A (ja) * 2002-12-25 2004-07-22 Ci Techno:Kk 発光装置およびその製造方法
JP2005084491A (ja) * 2003-09-10 2005-03-31 Hitachi Displays Ltd 平板バックライト及びこれを用いた液晶表示装置
JP2006164648A (ja) * 2004-12-03 2006-06-22 Quantum 14:Kk プラズマイグナイタ及びこれを搭載した装置
JP2006179202A (ja) * 2004-12-21 2006-07-06 Quantum 14:Kk 平面光源

Patent Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53121454A (en) * 1977-03-31 1978-10-23 Toshiba Corp Electron source of thin film electric field emission type and its manufacture
JPS63150837A (ja) * 1986-12-16 1988-06-23 Canon Inc 電子放出装置
JPH0473837A (ja) * 1990-07-13 1992-03-09 Futaba Corp 電子放出素子
JPH04286855A (ja) * 1991-03-15 1992-10-12 Matsushita Electric Works Ltd 発光素子
JPH07235257A (ja) * 1993-12-27 1995-09-05 Canon Inc 電子源、電子線発生装置、及び画像形成装置
JPH08222158A (ja) * 1995-02-17 1996-08-30 Olympus Optical Co Ltd 薄形表示装置
JPH09274845A (ja) * 1996-04-03 1997-10-21 Dainippon Printing Co Ltd 電子放出素子と電子放出素子用収束電極およびその製造方法
JPH1131452A (ja) * 1997-07-08 1999-02-02 Nec Corp 電界放出型冷陰極およびその製造方法
JPH11329213A (ja) * 1997-10-29 1999-11-30 Matsushita Electric Works Ltd 電界放射型電子源およびその製造方法および平面発光装置およびディスプレイ装置および固体真空デバイス
JPH11311975A (ja) * 1998-04-30 1999-11-09 Toshiba Corp 放電型平面表示装置
JP2002150944A (ja) * 2000-11-14 2002-05-24 Matsushita Electric Works Ltd 電子エミッタ付発光装置
JP2002203471A (ja) * 2000-12-19 2002-07-19 Iimu Jisuun フィールド・エミッタ
JP2002298778A (ja) * 2001-03-27 2002-10-11 Delta Optoelectronics Inc 冷陰極螢光平面灯
JP2004152591A (ja) * 2002-10-30 2004-05-27 Mitsubishi Pencil Co Ltd 電界放出型ランプ
JP2004200896A (ja) * 2002-12-17 2004-07-15 Anritsu Corp 誘電体漏れ波アンテナ
JP2004207066A (ja) * 2002-12-25 2004-07-22 Ci Techno:Kk 発光装置およびその製造方法
JP2005084491A (ja) * 2003-09-10 2005-03-31 Hitachi Displays Ltd 平板バックライト及びこれを用いた液晶表示装置
JP2006164648A (ja) * 2004-12-03 2006-06-22 Quantum 14:Kk プラズマイグナイタ及びこれを搭載した装置
JP2006179202A (ja) * 2004-12-21 2006-07-06 Quantum 14:Kk 平面光源

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