WO2006087938A1 - Procede et dispositif de reglage de la temperature pour plaque de traitement thermique, programme et support d’enregistrement pouvant enregistrer un programme lisible par ordinateur - Google Patents

Procede et dispositif de reglage de la temperature pour plaque de traitement thermique, programme et support d’enregistrement pouvant enregistrer un programme lisible par ordinateur Download PDF

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Publication number
WO2006087938A1
WO2006087938A1 PCT/JP2006/302057 JP2006302057W WO2006087938A1 WO 2006087938 A1 WO2006087938 A1 WO 2006087938A1 JP 2006302057 W JP2006302057 W JP 2006302057W WO 2006087938 A1 WO2006087938 A1 WO 2006087938A1
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WO
WIPO (PCT)
Prior art keywords
temperature
heat treatment
substrate
warpage
temperature correction
Prior art date
Application number
PCT/JP2006/302057
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English (en)
Japanese (ja)
Inventor
Mitsuteru Yano
Shinichi Shinozuka
Hiroshi Tomita
Ryoichi Uemura
Masahide Tadokoro
Original Assignee
Tokyo Electron Limited
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Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Publication of WO2006087938A1 publication Critical patent/WO2006087938A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece

Definitions

  • Heat treatment plate temperature setting method heat treatment plate temperature setting device, program, and computer-readable recording medium recording the program
  • the present invention relates to a temperature setting method for a heat treatment plate, a temperature setting device for a heat treatment plate, a program, and a computer-readable recording medium on which the program is recorded.
  • a resist coating process for applying a resist solution on a wafer to form a resist film for example, an exposure process for exposing the resist film to a predetermined pattern, Heat treatment (post-exposure baking) that promotes the chemical reaction, development processing that develops the exposed resist film, etc., are sequentially performed to form a predetermined resist pattern on the wafer.
  • Heat treatment post-exposure baking
  • Heat treatment such as the above-described post exposure baking is usually performed by a heat treatment apparatus.
  • the heat treatment equipment is equipped with a hot plate to place and heat the wafer.
  • a heater that generates heat by power supply is built into the hot plate, and the hot plate is adjusted to a predetermined temperature by the heat generated by the heater.
  • the heat treatment temperature in the above-described heat treatment greatly affects the line width of the resist pattern finally formed on the wafer. Therefore, in order to strictly control the temperature in the wafer surface during heating, the heat plate of the above-described heat treatment apparatus is divided into a plurality of regions, and an independent heater is built in each region. The temperature is adjusted.
  • Patent Document 1 Japanese Patent No. 3325833
  • the set temperature of each region of the conventional hot plate has been corrected so that the in-plane temperature of the wafer placed on the hot plate is uniform.
  • the line width of the resist pattern finally formed on the wafer may not be uniform on the wafer surface.
  • the present invention has been made in view of the points to be applied, and the temperature setting of a heat treatment plate such as a hot plate is set so that the line width of the resist pattern is uniformly formed in a substrate surface such as a wafer. Its purpose is to do.
  • the present invention provides a temperature setting method for a heat treatment plate on which a substrate is placed and heat treated, wherein the heat treatment is performed in a photolithography process for forming a resist pattern on the substrate.
  • the heat treatment plate is divided into a plurality of regions, the temperature is set for each region, and the in-plane temperature of the substrate on the heat treatment plate is adjusted for each region of the heat treatment plate.
  • a temperature correction value is set, and the warpage amount and warpage shape of the substrate to be heat-treated are measured. Based on the measurement results of the warpage amount and warpage shape of the substrate, the line width of the resist pattern is formed uniformly within the substrate surface. As described above, the temperature correction value of each region is set.
  • the temperature correction value of each region of the heat treatment plate is set so that the line width of the resist pattern is uniform within the substrate surface based on the measurement result of the warpage of the substrate. As a result, the resist pattern formed through heat treatment on the heat-treated plate is uniformly formed on the substrate surface.
  • a temperature correction table that defines an optimum temperature correction value for each region corresponding to each warpage amount and warpage shape of the substrate is created, and the temperature is calculated based on the measurement results of the warpage amount and warpage shape of the substrate.
  • the temperature correction value for each area may be set by a correction table.
  • the temperature correction table may be created for each processing recipe determined by at least a combination of the heat treatment temperature and the type of resist solution.
  • the relational expression between the amount of warpage of the substrate and the optimum temperature correction value of each region is determined for each warpage shape of the substrate.
  • the temperature correction value for each region may be set by the relational expression based on the measurement result of the warpage amount and warpage shape of the substrate.
  • the warpage amount and warpage shape of the substrate may be measured, and the temperature correction value of each region may be set, and the warpage amount and warpage shape of the substrate may be measured during the heat treatment.
  • the temperature correction value for each area may be set.
  • the heat treatment may be a heat treatment performed after the exposure process and before the development process.
  • the present invention according to another aspect is a temperature setting device for a heat treatment plate on which a substrate is placed and heat treated, wherein the heat treatment is performed in a photolithography process for forming a resist pattern on the substrate.
  • the heat treatment plate is divided into a plurality of regions, the temperature is set for each region, and a temperature correction value for adjusting the in-plane temperature of the substrate on the heat treatment plate is set for each region of the heat treatment plate.
  • the temperature correction value of each region is set so that the line width of the resist pattern is uniformly formed in the substrate surface based on the warpage amount and warpage shape of the substrate to be heat-treated. .
  • the temperature correction value of each region of the heat treatment plate is set so that the line width of the resist pattern is uniform within the substrate surface based on the measurement result of the warp of the substrate. As a result, the resist pattern formed through heat treatment on the heat-treated plate is uniformly formed on the substrate surface.
  • the temperature setting device includes a temperature correction table that defines an optimum temperature correction value for each region corresponding to each warp amount and warp shape of the substrate, and based on the warp amount and warp shape of the substrate, Then, the temperature correction value of each region may be set by the temperature correction table.
  • the temperature correction table may be provided for each processing recipe determined by at least a combination of the heat treatment temperature and the type of resist solution.
  • the temperature setting device is provided with a relational expression between the warpage amount of the substrate and the optimum temperature correction value of each region for each warpage shape of the substrate, and the relationship is based on the warpage amount and the warpage shape of the substrate.
  • the temperature correction value for each region may be set by an equation. Note that the relational expression is determined for each processing recipe determined by a combination of at least the heat treatment temperature and the type of resist solution. May be provided.
  • a temperature correction value of each region may be set before the heat treatment. Further, a temperature correction value for each of the regions may be set during the heat treatment based on the amount of warp of the substrate during the heat treatment and the state of the warp shape.
  • the heat treatment may be a heat treatment performed after the exposure process and before the development process.
  • the present invention provides a program for use in a temperature setting apparatus for performing heat treatment of a substrate performed in a photolithography process for forming a resist pattern using a heat treatment plate, the heat treatment plate Is divided into a plurality of regions, and the temperature can be set for each region, and for each region of the heat treatment plate, a temperature correction value for adjusting the in-plane temperature of the substrate on the heat treatment plate is set.
  • the program sets the temperature correction value for each region so that the line width of the resist pattern is uniformly formed in the substrate surface based on the warpage amount and warpage shape of the substrate to be thermally processed. This allows the computer to execute the function to be performed.
  • Such a program is recorded on, for example, a computer-readable recording medium such as a hard disk, a compact disk, a magneto-optical disk, a floppy disk, and the like.
  • a computer-readable recording medium such as a hard disk, a compact disk, a magneto-optical disk, a floppy disk, and the like.
  • the yield can be improved.
  • FIG. 1 is a plan view showing the outline of the configuration of a coating and developing treatment system.
  • FIG. 2 is a front view of the coating and developing treatment system of FIG. 1.
  • FIG. 3 is a rear view of the coating and developing treatment system of FIG. 1.
  • ⁇ 4 It is an explanatory view of a longitudinal section showing an outline of the configuration of the warpage measuring device.
  • FIG. 5 is an explanatory view of a longitudinal section showing an outline of the configuration of the PEB apparatus.
  • FIG. 6 is an explanatory diagram of a transverse section showing an outline of the configuration of the PEB device.
  • FIG. 7 is a plan view showing a configuration of a hot plate of the PEB apparatus.
  • FIG. 8 is a block diagram showing a configuration of a temperature setting device.
  • FIG. 9 is a table showing an example of a temperature correction table.
  • FIG. 10 is a table showing a temperature correction table for each processing recipe.
  • FIG. 11 is a flowchart showing a temperature correction value setting process.
  • FIG. 12 is an explanatory diagram showing a relational expression between the amount of warpage of the wafer and the optimum temperature correction value.
  • FIG. 13 is a graph showing a first correlation between the amount of wafer warpage and the wafer temperature during heat treatment.
  • FIG. 14 is a graph showing a second correlation between the wafer temperature during heat treatment and the temperature correction value.
  • FIG. 15 is a graph showing the in-plane temperature distribution of the wafer due to wafer warpage.
  • FIG. 16 is an explanatory view of a longitudinal section showing a configuration of a warpage measuring apparatus having two laser irradiation units.
  • FIG. 17 is an explanatory view of a longitudinal section showing a configuration of a warpage measuring apparatus provided with a laser displacement meter. Explanation of symbols
  • FIG. 1 is a plan view showing a schematic configuration of a coating and developing treatment system 1 provided with a temperature setting device for a heat treatment plate according to the present embodiment.
  • FIG. 2 is a front view of the coating and developing treatment system 1. Yes, Fig. 3 is a rear view of the coating development system 1.
  • the coating / development processing system 1 carries, for example, 25 wafers W in the cassette unit into / out of the external force coating / development processing system 1, and the wafer W with respect to the cassette C.
  • an interface unit 4 for transferring Ueno and W between the exposure station 3 and an exposure apparatus (not shown) provided adjacent to the processing station 3 are integrally connected.
  • the cassette station 2 is provided with a cassette mounting table 5.
  • the cassette mounting table 5 can mount a plurality of cassettes C in a row in the X direction (vertical direction in FIG. 1).
  • the cassette station 2 is provided with a wafer transfer body 7 that can move on the transfer path 6 in the X direction.
  • the wafer carrier 7 is also movable in the wafer arrangement direction (Z direction; vertical direction) of the wafers W accommodated in the cassette C, and with respect to the wafers W in each cassette C arranged in the X direction. Can be selectively accessed.
  • the wafer carrier 7 is rotatable in the ⁇ direction around the Z-axis, and also with respect to a temperature control device 60 and a transition device 61 belonging to a third processing device group G3 on the processing station 3 side described later. Accessible.
  • the processing station 3 adjacent to the cassette station 2 includes, for example, five processing device groups G1 to G5 in which a plurality of processing devices are arranged in multiple stages.
  • cassette station 2 side force first processing device group G1 and second processing device group G2 are arranged in sequence.
  • the cassette station 2 side force 3rd processing device group G3, 4th processing device group G4 and 5th processing device group G5 are in order.
  • a first transfer device 10 is provided between the third processing device group G3 and the fourth processing device group G4.
  • the first transfer device 10 can selectively access the processing devices in the first processing device group G1, the third processing device group G3, and the fourth processing device group G4 to transfer the wafer W.
  • a second transfer device 11 is provided between the fourth processing device group G4 and the fifth processing device group G5. The second transfer device 11 can selectively access the processing devices in the second processing device group G2, the fourth processing device group G4, and the fifth processing device group G5 to transfer the wafer W.
  • a liquid processing apparatus for supplying a predetermined liquid to the wafer W to perform processing for example, a resist coating apparatus for applying a resist solution to the wafer W 20.
  • the second processing unit group G2 includes a liquid processing unit.
  • a processing device, for example, a developing processing device 30 to 34 for supplying a developing solution to the wafer W and developing the wafer W is stacked in five stages in order.
  • chemical chambers 40 for supplying various processing liquids to the liquid processing units in the processing unit groups Gl and G2, 40, 41 are provided at the bottom of the first processing unit group G1 and the second processing unit group G2, chemical chambers 40 for supplying various processing liquids to the liquid processing units in the processing unit groups Gl and G2, 40, 41 are provided.
  • the third processing unit group G3 includes a temperature control unit 60, a transition unit 61 for transferring the wafer W, and the temperature of the wafer W under high-precision temperature control.
  • the high-precision temperature control devices 62 to 64 to adjust and the high-temperature heat processing devices 65 to 68 to heat-treat the wafer W at high temperature are also stacked in 9 steps in order.
  • a high-precision temperature control unit 70 pre-baking units 71 to 74 for heating the wafer W after the resist coating process, and the wafer W after the development process are heated.
  • Post-baking devices 75 to 79 to be processed are stacked in 10 steps in order of the lower force.
  • a plurality of heat treatment apparatuses for heat-treating the wafer W for example, high-accuracy temperature control apparatuses 80 to 83, and a plurality of post-exposure baking apparatuses (for processing the wafer W after exposure) ( (Hereinafter referred to as “PEB device”) 84-87, warp measuring devices 88, 89 for measuring the warpage of the wafer are stacked in 10 steps in order of the lower force.
  • PEB device warp measuring devices 88, 89 for measuring the warpage of the wafer
  • a plurality of processing devices are arranged on the positive side in the X direction of the first transfer device 10, for example, to hydrophobize the wafer W as shown in FIG.
  • Adhesion devices 90 and 91, and heating devices 92 and 93 that heat the wafer W are stacked in four steps in descending order.
  • a peripheral exposure device 94 that selectively exposes only the edge portion of the wafer W, for example, is disposed on the positive side in the X direction of the second transfer device 11.
  • the interface unit 4 is provided with a wafer transfer body 101 that moves on a transfer path 100 that extends in the X direction, and a buffer cassette 102.
  • the wafer transport body 101 can move in the Z direction and can also rotate in the ⁇ direction.
  • the wafer transport body 101 is connected to an exposure apparatus (not shown) adjacent to the interface unit 4, the notch cassette 102, and the fifth processing unit group G5.
  • the wafer W can be transferred by accessing it.
  • the warp measuring device 88 includes a plurality of support pins 110 for horizontally supporting the wafer W as shown in FIG.
  • the support pin 110 is configured to be movable up and down by a drive mechanism 111 including, for example, a cylinder. It is made.
  • a drive mechanism 111 including, for example, a cylinder. It is made.
  • Above the wafer W supported by the support pins 110 for example, two laser irradiation units 113 and 114 of a laser displacement meter 112 are provided above the wafer W supported by the support pins 110.
  • the first laser irradiation unit 113 is disposed above the central portion of the wafer W, and can irradiate the central portion of the wafer W with laser light and receive the reflected light.
  • the second laser irradiation unit 114 is arranged above the outer periphery of the wafer W, and can irradiate the outer periphery of the wafer W with laser light and receive the reflected light.
  • the light reception information of each laser irradiation unit 113, 114 is output to the measurement unit 115 of the laser displacement meter 112, and the measurement unit 115 calculates the height difference d between the center portion and the outer peripheral portion of the wafer W based on the light reception information.
  • the amount of warpage and warpage shape of the wafer W can be measured.
  • the height difference d is the amount of warp.
  • the warped shape is convex when the outer peripheral part of the wafer W is higher than the central part, and concave when the central part of the wafer W is higher than the outer peripheral part. Since the warpage measuring device 89 has the same configuration as the warpage measuring device 88, description thereof is omitted.
  • the wafer carrier 7 takes out the unprocessed wafer W from the cassette C force on the cassette mounting table 5 and transports it to the temperature control device 60 of the third processing unit group G3. Is done.
  • the wafer W transferred to the temperature control device 60 is adjusted to a predetermined temperature, and then transferred to the bottom coating device 23 by the first transfer device 10 to form an antireflection film.
  • the wafer W on which the antireflection film is formed is sequentially transferred by the first transfer device 10 to the heating device 92, the high-temperature heat treatment device 65, and the high-precision temperature control device 70, and is subjected to predetermined processing in each device. .
  • the wafer W is transferred to the resist coating device 20, and after a resist film is formed on the wafer W, it is transferred to the pre-baking device 71 by the first transfer device 10, and then the second transfer device. 11 is sequentially conveyed to the peripheral exposure device 94 and the high-precision temperature control device 83, and predetermined processing is performed in each device. Thereafter, UENO and W are transported to the exposure apparatus and exposed by the wafer transport body 101 of the interface unit 4! The wafer W that has been subjected to the exposure process is transferred to, for example, the warpage measuring device 88 by the wafer transfer body 101, and after the warpage is measured, it is transferred to the PEB device 84 and subjected to post-exposure baking.
  • the wafer W is transferred to the high-precision temperature control device 81 by the second transfer device 11 and the temperature is adjusted, and then transferred to the development processing device 30 where the resist film on the wafer W is developed. Thereafter, the wafer W is transferred to the post-baking device 75 by the second transfer device 11 and subjected to heat treatment. It is conveyed to the temperature control device 63 and the temperature is adjusted. Then, the wafer W is transferred to the transition device 61 by the first transfer device 10 and returned to the cassette C by the wafer transfer body 7 to complete a series of photolithography processes.
  • the PEB device 84 includes a heating unit 121 that heats the wafer W and a cooling unit 122 that cools the wafer W.
  • the heating unit 121 includes a cover body 130 that is located on the upper side and is movable up and down, and a hot plate that forms the processing chamber S together with the lid body 130 located on the lower side. With containment 131!
  • the lid 130 has a substantially conical shape that gradually increases toward the center, and an exhaust part 130a is provided at the top.
  • the atmosphere in the processing chamber S is uniformly exhausted from the exhaust part 130a.
  • a hot plate as a heat treatment plate for placing and heating the wafer W is mounted in the center of the hot plate receiving part 131.
  • the hot plate 140 has a substantially disk shape with a large thickness.
  • the hot plate 140 is divided into, for example, a circular hot plate region R and a hot plate region R to R that are circularly divided into four circular arcs around the center of the plate.
  • a heater 141 that generates heat by power feeding is individually incorporated.
  • Each hot plate area R ⁇ R It can be heated for each hot plate area R ⁇ R.
  • Each hot plate area R ⁇ R It can be heated for each hot plate area R ⁇ R.
  • the amount of heat generated by the heater 141 of 1 5 1 5 is adjusted by the temperature controller 142.
  • the temperature controller 142 adjusts the amount of heat generated by the heater 141 so that each of the hot plate regions R to R
  • the temperature of 15 can be controlled to a predetermined set temperature.
  • the temperature setting in the temperature control device 142 is performed by, for example, a temperature setting device 190 described later.
  • first raising / lowering pins 150 for raising and lowering the wafer W while supporting the downward force.
  • the first elevating pin 150 can be moved up and down by the elevating drive mechanism 151.
  • a through hole 152 that penetrates the hot plate 140 in the thickness direction is formed.
  • the first elevating pin 150 is able to protrude upward from the hot plate 140 by passing through the through-hole 152 by increasing the downward force of the hot plate 140.
  • the hot plate accommodating portion 131 accommodates the hot plate 140 and holds an outer peripheral portion of the hot plate 140.
  • a holding member 160 and a substantially cylindrical support ring 161 surrounding the outer periphery of the holding member 160 are provided.
  • the inside of the processing chamber S can be purged by injecting an inert gas from the outlet 161a.
  • a cylindrical case 162 serving as an outer periphery of the hot plate accommodating portion 131 is provided outside the support ring 161.
  • the cooling unit 122 adjacent to the heating unit 121 is provided with a cooling plate 170 on which, for example, the wafer W is placed and cooled.
  • the cooling plate 170 has, for example, a substantially rectangular flat plate shape as shown in FIG. 6, and the end surface on the heating unit 121 side is curved in an arc shape.
  • a cooling member 170a such as a Peltier element is built in the cooling plate 170, and the cooling plate 170 can be adjusted to a predetermined set temperature.
  • the cooling plate 170 is attached to a rail 171 extending toward the heating unit 121 side.
  • the cooling plate 170 can be moved on the rail 171 by the driving unit 172.
  • the cooling plate 170 can move to above the heating plate 140 on the heating unit 121 side.
  • the cooling plate 170 for example, two slits 173 along the X direction are formed as shown in FIG.
  • the slit 173 is formed so that the end surface force on the heating unit 121 side of the cooling plate 170 is also close to the center of the cooling plate 170.
  • the slit 173 prevents interference between the cooling plate 170 moved to the heating chamber 121 side and the first lifting pin 150 protruding on the heating plate 140.
  • a second lifting pin 174 is provided below the slit 173 in the cooling section 122.
  • the second raising / lowering pin 174 can be raised and lowered by the raising / lowering drive unit 175.
  • the second elevating pin 174 can also protrude downward from the cooling plate 170 through the slit 173 as the downward force of the cooling plate 170 rises.
  • loading / unloading ports 180 for loading / unloading the wafer W are formed on both side surfaces of the casing 120 with the cooling plate 170 interposed therebetween.
  • the wafer W is loaded from the loading / unloading port 180 and placed on the cooling plate 170. Subsequently, the cooling plate 170 is moved, and the wafer W is moved above the hot plate 140. The first lifting pins 150 place the wafer W on the hot plate 140 and heat the wafer W. Then, after a predetermined time has passed, the wafer W is again transferred from the hot plate 140 to the cooling plate 170 to be cooled, and from the cooling plate 170 to the loading / unloading port 180. At the same time, it is carried out of the PEB apparatus 84 and a series of heat treatments is completed.
  • the temperature setting device 190 is composed of, for example, a general-purpose computer equipped with a CPU, a memory, and the like, and is connected to the temperature control device 142 of the hot plate 140, for example, as shown in FIGS.
  • the temperature setting device 190 includes, for example, an arithmetic unit 200 that executes various programs as shown in FIG. 8, an input unit 201 that inputs various information for temperature setting, a temperature correction table M, and the like.
  • a data storage unit 202 that stores various information
  • a program storage unit 203 that stores various programs for temperature setting
  • a communication unit 204 that communicates with the temperature controller 142 to change the temperature setting of the heat plate 140.
  • the data storage unit 202 stores a plurality of temperature correction tables M created for each processing recipe.
  • the temperature correction table M includes the hot plate regions R to R of the hot plate 140 corresponding to the warpage amount and warpage shape of the wafer W.
  • the optimum temperature correction value of 15 is set for each warpage amount and warpage shape of the wafer w.
  • the warp shape of the wafer W is divided into two types: a convex shape that curves upward and a concave shape that curves downward.
  • the temperature correction table M is created for each processing recipe H determined by the combination of the heat treatment temperature and the type of resist solution. Therefore, if either the heat treatment temperature or the type of resist solution is different, the processing recipe H is different (HI, H2, H3, H4 shown in Fig. 10), and the temperature correction table M (see Fig. 10) for each processing recipe H. Ml, M2, M3, M4) are created.
  • the optimum temperature correction values in these temperature correction tables M are such that the line width of the finally formed resist pattern is uniform within the wafer surface for each warp amount and warp shape of each processing recipe H, for example. It is set to such a value.
  • These optimum temperature correction values are obtained by performing heat treatment with multiple temperature correction values on a wafer W whose warpage amount and warpage shape are known, for example, to form line widths. It is obtained by finding a uniform width in the wafer plane.
  • the program storage unit 203 stores the temperature of each hot plate region R to R based on the processing recipe H, the warpage amount and warpage shape, and the temperature correction table M input as shown in FIG.
  • this program P2 uses a predetermined approximate calculation method such as the least squares method to calculate the temperature correction corresponding to the input warpage amount from existing information on the warpage amount, warpage shape and optimum temperature correction value of the temperature correction table M, for example. The value can be calculated.
  • the program storage unit 203 stores a program P3 for changing the existing temperature setting of the temperature control device 142 based on, for example, the obtained temperature correction value.
  • the various programs for realizing the function of the temperature setting device 190 may be installed in the temperature setting device 190 using a computer-readable recording medium.
  • Figure 11 shows the flow of the temperature setting process.
  • the wafer W before the exposure processing is finished and before being carried into the PEB apparatus 84 is transported to the warpage measuring device 88 and the warpage of the wafer W is measured (see FIG. 11).
  • Process Ql the warpage measuring device 88, for example, as shown in FIG. 4, the wafer W is supported on the support pin 110, and the height difference d between the central portion and the outer peripheral portion of the wafer W is measured by the laser irradiation units 113 and 114. The amount of warpage is measured.
  • the warp shape of the wafer W is measured, and the warp shape is defined as a convex shape when the outer peripheral portion of the wafer W is higher than the central portion, and is concave when the central portion of the wafer W is higher than the outer peripheral portion. It is defined as a shape.
  • the measurement results of the warp amount and the warp shape measured by the warp measuring device 88 are output to the temperature setting device 190.
  • the temperature setting device 190 for example, when a processing recipe H is input, the temperature correction table M corresponding to the processing recipe H is selected, and the temperature correction table M and the input warpage amount and warpage shape of the wafer W are selected. , Temperature compensation for each hot plate area R ⁇ R
  • the value is obtained (Step Q2 in Figure 11). For example, if the temperature correction table M data contains an optimal temperature correction value that matches the input warpage amount and warpage shape, that value is selected. In addition, the data of the temperature correction table M matches the input warp amount and warp shape. If there is no optimum temperature correction value, the temperature correction value is calculated by the least square method, for example, using the existing information of the temperature correction table M and the amount of warpage input.
  • Information on the temperature correction value obtained by the temperature setting device 190 is output from the communication unit 204 to the temperature control device 142, and the temperature correction of each of the hot plate regions R to R of the hot plate 140 in the temperature control device 142 is performed.
  • the value setting is changed, and a new set temperature is set (step in Fig. 11).
  • the change of the temperature setting is completed before the wafer W is processed by the PEB apparatus 84.
  • the wafer W for which the warpage is measured by the warp measuring device 88 is transferred to the PEB device 84 and heat-treated at a new set temperature.
  • the warp of the wafer W is measured, and each hot plate region R in which the line width in the wafer surface is made uniform by the temperature correction table M based on the measurement result.
  • a temperature correction value of ⁇ R is obtained and set.
  • the line width of the resist pattern is uniformly formed on the wafer surface.
  • the temperature correction value of 5 is changed.
  • post etaspo jar baking is always performed at an appropriate in-plane temperature, so that the line width of the finally formed resist pattern is uniformly formed in the substrate surface.
  • the warpage of the wafer W is measured, and the measurement result of the warpage is reflected in the temperature setting of the PEB apparatus 84.
  • Wafer W can be heat-treated at temperature. As a result, the in-plane uniformity of the line width of each wafer can be reliably ensured.
  • the temperature correction values of the hot plate regions R to R are obtained from the temperature correction table M created in advance, but the warpage amount and the optimum temperature of the wafer W obtained in advance are obtained.
  • a temperature correction value of 5 may be obtained.
  • a relational expression N between the warpage amount of the wafer W and the optimum temperature correction value of each hot plate region R to R as shown in FIGS. 12 (a) and 12 (b) is obtained.
  • the relation N is convex It is obtained for each warped shape of a shape and a concave shape.
  • These relational expressions N can be obtained, for example, by an experiment conducted in advance to detect the optimum temperature measurement value in each processing recipe.
  • the relational expression N is stored in the program storage unit 203, for example.
  • the warpage amount and warpage shape of the wafer W measured by the warpage measuring device 88 are input to the temperature setting device 190.
  • the temperature setting device 190 selects the corresponding relational expression N based on the input processing recipe H and warpage shape. Then, the temperature correction value of each hot plate region R to R is calculated from the input warpage amount and the selected relational expression N. And the calculated temperature
  • temperature correction values for each hot plate area R to R are set so that the line width in the wafer surface is uniform.
  • a uniform resist pattern can be formed in the plane.
  • the temperature correction value is calculated by the relational expression N.
  • the temperature correction value may be calculated by using the first phase! 3 ⁇ 4 [and the second correlation K between the temperature of the wafer and the temperature correction value as shown in FIG.
  • the amount of warpage in the wafer surface first measured by the warpage measuring device 88 is changed to the in-plane temperature distribution during the heat treatment of the warped wafer W as shown in FIG. 15 by the first phase. Converted.
  • the temperature correction value ⁇ of each hot plate region R to R that makes the in-plane temperature distribution of the wafer W flattened is calculated from the in-plane temperature distribution of the wafer W and the second correlation K. .
  • the temperature correction table M and the relational expression N are set for each processing recipe H determined by the combination of the heat treatment temperature and the type of resist solution! It may be set for each processing recipe determined by the state.
  • the state of the wafer W includes, for example, the number of base films of the wafer W on which a resist pattern is formed, film quality, film thickness, Ueno, and the warp state of W. Therefore, the temperature correction table M and the relational expression N are the heat treatment temperature, the type of resist solution, the number of underlying films, film quality, film thickness, and wafer warpage. It may be set for each processing recipe determined by a combination with at least one of the above.
  • the wafer W is supported by the support pins 110, but the wafer W may be supported by, for example, a chuck.
  • the warp measuring device 88 described in the above embodiment has a force for measuring the warpage of the wafer W using the two laser irradiation sections 113 and 114. As shown in FIG. The warpage of the wafer W may be measured by using one laser irradiation unit 200 that irradiates and a laser displacement meter 202 having a measurement unit 201.
  • the warpage amount and warpage shape of the wafer W are measured. Measure.
  • the warpage of the wafer W can be measured with a warp measuring device 88 having a simpler configuration.
  • the drive mechanism 111 of the support pin 110 may be provided with a rotation function, and the supported weno and w may be rotated. In this way, for example, it is possible to detect the warpage of the entire outer periphery of the wafer W, and each hot plate region R corresponding to the warpage of each outer peripheral region within the wafer surface.
  • the warpage measuring apparatus 88 of the above embodiment measures the warpage of the wafer W using a laser displacement meter, but other displacement meters such as a capacitance type displacement meter are used. You can measure the warp.
  • the warpage of the wafer W was measured between the exposure processing and the post-exposure baking in the photolithography process of the coating and developing processing system 1.
  • the warpage of the wafer W may be measured during the heat treatment.
  • the PEB device 84 is provided with a laser displacement meter 210.
  • the first laser irradiation unit 211 is arranged above the center of the wafer W on the hot plate 140.
  • a second laser irradiation unit 222 is arranged above the outer peripheral portion of the wafer W on the hot plate 140.
  • the measurement unit 213 of the laser displacement meter 210 is disposed outside the casing 120.
  • the warpage of the wafer W is measured using the laser displacement meter 210.
  • This measurement may be performed, for example, once during the heat treatment, may be performed intermittently a plurality of times, or may be performed continuously.
  • the measurement result is immediately output to the temperature setting device 190.
  • the temperature correction value of each hot plate region R to R is obtained based on the measurement result of the warpage of the wafer w, and the temperature setting of the hot plate 140 is changed.
  • the temperature can be set in consideration of the warpage of the wafer w generated during the heat treatment.
  • the warpage of the wafer W may be measured at other timing before post-exposure baking, for example, during pre-baking or during exposure processing. Furthermore, the warpage of the wafer W may be measured before the processing in the coating and developing treatment system 1 is started.
  • the warp measuring device 88 for measuring the warpage of the wafer W is located in a place other than the fifth processing device group G5, which is the same as the PEB device 84, for example, another processing device group in the processing station 3, the cassette station 2, the interface unit 4 or the like. May be arranged.
  • the present invention is not limited to this example and can take various forms.
  • the temperature-set hot plate 140 is divided into five regions, but the number can be arbitrarily selected.
  • the above embodiment is an example of setting the temperature of the hot plate 140 of the PEB device 84, but other heat treatment devices such as a pre-baking device and a post-baking device equipped with a hot plate,
  • the present invention can also be applied to a cooling processing apparatus having a cooling plate on which the wafer W is placed and cooled.
  • the present invention can also be applied to the temperature setting of a heat treatment plate for heat treatment of other substrates such as FPD (Flat Panel Display) and photomask mask reticles other than wafers.
  • FPD Full Panel Display
  • the present invention is useful when setting the temperature of the heat treatment plate so that the line width of the resist pattern is uniformly formed in the substrate surface.

Abstract

Le procédé de la présente invention consiste à régler la température d'une plaque chaude de manière à former la largeur de ligne d'un motif de résistance uniforme dans un plan de la tranche. La plaque chaude d'un dispositif d'unité chauffante est divisée en une pluralité de régions de plaque chaude, le réglage de la température étant possible pour chaque région de plaque chaude. Une valeur de correction de température, permettant de réguler la température en plan d'une tranche à fixer sur la plaque chaude, est réglée pour chaque région de plaque chaude de la plaque chaude. La valeur de correction de température de chaque région de plaque chaude de la plaque chaude est réglée en fonction d'un tableau de correction des températures indiquant une valeur de correction de température optimale correspondant à chaque quantité et forme d'emballement d'une tranche à traiter thermiquement. Le tableau de correction de température définit pour chaque quantité et forme d'emballement d'une tranche une valeur de correction de température optimale qui uniformise une largeur de ligne devant être finalement formée dans un plan de la tranche.
PCT/JP2006/302057 2005-02-15 2006-02-07 Procede et dispositif de reglage de la temperature pour plaque de traitement thermique, programme et support d’enregistrement pouvant enregistrer un programme lisible par ordinateur WO2006087938A1 (fr)

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JP2005038015A JP2006228820A (ja) 2005-02-15 2005-02-15 熱処理板の温度設定方法，熱処理板の温度設定装置，プログラム及びプログラムを記録したコンピュータ読み取り可能な記録媒体

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JP6745588B2 (ja) * 2015-06-16 2020-08-26 株式会社ノリタケカンパニーリミテド 焼成装置
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CN111785626A (zh) * 2019-04-04 2020-10-16 长鑫存储技术有限公司 加热方法以及加热装置
CN113785242A (zh) 2019-05-01 2021-12-10 Asml荷兰有限公司 物体定位器、用于校正物体形状的方法、光刻设备、物体检查设备、装置制造方法
CN111900076A (zh) * 2020-06-28 2020-11-06 中国科学院微电子研究所 一种用于晶圆烘烤的温度控制方法
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