WO2006003880A1 - 真空処理装置 - Google Patents

真空処理装置 Download PDF

Info

Publication number
WO2006003880A1
WO2006003880A1 PCT/JP2005/011808 JP2005011808W WO2006003880A1 WO 2006003880 A1 WO2006003880 A1 WO 2006003880A1 JP 2005011808 W JP2005011808 W JP 2005011808W WO 2006003880 A1 WO2006003880 A1 WO 2006003880A1
Authority
WO
WIPO (PCT)
Prior art keywords
chamber
processing chamber
processing
loading
unloading
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2005/011808
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Seiichi Takahashi
Takehisa Miyaya
Soo Boo Lim
Masayuki Satou
Kengo Tsutsumi
Yohei Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP2006528695A priority Critical patent/JP4673308B2/ja
Priority to DE112005001539T priority patent/DE112005001539B4/de
Priority to KR1020067027765A priority patent/KR100808820B1/ko
Publication of WO2006003880A1 publication Critical patent/WO2006003880A1/ja
Priority to US11/646,593 priority patent/US7682481B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3306—Horizontal transfer of a single workpiece
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0466—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3308—Vertical transfer of a single workpiece
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Definitions

  • the processing chamber 130 is airtightly connected to the loading / unloading chamber 110 at a position on the loading / unloading chamber 110, and the substrate disposed inside the loading / unloading chamber 110 can be loaded into and unloaded from the processing chamber 130 without being exposed to the outside air. .
  • the natural oxide film (here, the silicon oxide film) on the substrate reacts with the process gas and radicals to produce a reaction product (here, NH SiF).
  • the above is the force described for the case where the etching process is performed in the processing chamber 20.
  • the processing performed in the processing chamber 20 is not particularly limited as long as the substrate is processed in a vacuum atmosphere.
  • a thermal diffusion method This is accomplished by forming a film on the substrate surface by thermal CVD, sputtering, vapor deposition, or the like.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
PCT/JP2005/011808 2004-06-30 2005-06-28 真空処理装置 Ceased WO2006003880A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006528695A JP4673308B2 (ja) 2004-06-30 2005-06-28 真空処理装置
DE112005001539T DE112005001539B4 (de) 2004-06-30 2005-06-28 Vakuumbearbeitungsvorrichtung und Verfahren zum Austausch einer Vakuumbearbeitungskammer einer solchen Vorrichtung
KR1020067027765A KR100808820B1 (ko) 2004-06-30 2005-06-28 진공처리 장치
US11/646,593 US7682481B2 (en) 2004-06-30 2006-12-28 Vacuum processing apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004193569 2004-06-30
JP2004-193569 2004-06-30

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/646,593 Continuation US7682481B2 (en) 2004-06-30 2006-12-28 Vacuum processing apparatus

Publications (1)

Publication Number Publication Date
WO2006003880A1 true WO2006003880A1 (ja) 2006-01-12

Family

ID=35782687

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2005/011808 Ceased WO2006003880A1 (ja) 2004-06-30 2005-06-28 真空処理装置

Country Status (7)

Country Link
US (1) US7682481B2 (https=)
JP (1) JP4673308B2 (https=)
KR (1) KR100808820B1 (https=)
CN (1) CN100492599C (https=)
DE (1) DE112005001539B4 (https=)
TW (1) TW200607013A (https=)
WO (1) WO2006003880A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100841741B1 (ko) * 2007-04-04 2008-06-27 주식회사 싸이맥스 진공처리장치
EP4056740A1 (de) * 2021-03-10 2022-09-14 Siltronic AG Verfahren zum herstellen von halbleiterscheiben mit epitaktischer schicht in einer kammer eines abscheidereaktors
CN114481098A (zh) * 2022-01-17 2022-05-13 成都四威高科技产业园有限公司 一种具有防护功能的腔室pecvd设备传动装置
DE102022129723A1 (de) 2022-11-10 2024-05-16 Aixtron Se CVD-Reaktor mit herausnehmbarem Prozesskammergehäuse

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08111449A (ja) * 1994-08-19 1996-04-30 Tokyo Electron Ltd 処理装置
JP2000182967A (ja) * 1998-12-15 2000-06-30 Sony Corp 気相成長方法および気相成長装置
JP2000273631A (ja) * 1999-03-24 2000-10-03 Olympus Optical Co Ltd スパッタリング装置
JP2001035842A (ja) * 1999-07-19 2001-02-09 Sony Corp Ｃｖｄ装置及び半導体装置の製造方法
JP2002280438A (ja) * 2001-03-19 2002-09-27 Ulvac Japan Ltd 真空処理方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3735284A1 (de) * 1987-10-17 1989-04-27 Leybold Ag Vorrichtung nach dem karussell-prinzip zum beschichten von substraten
JPH01257193A (ja) * 1988-04-08 1989-10-13 Sumitomo Electric Ind Ltd 半導体気相成長装置
JPH06267808A (ja) * 1993-03-15 1994-09-22 Hitachi Ltd チャンバ接続用ガイド機構付きマルチチャンバ装置
JP4906999B2 (ja) * 2000-07-12 2012-03-28 株式会社アルバック 真空装置
TWI290589B (en) * 2000-10-02 2007-12-01 Tokyo Electron Ltd Vacuum processing device
JP2003229417A (ja) * 2001-11-28 2003-08-15 Tokyo Electron Ltd 真空処理装置及びその制御方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08111449A (ja) * 1994-08-19 1996-04-30 Tokyo Electron Ltd 処理装置
JP2000182967A (ja) * 1998-12-15 2000-06-30 Sony Corp 気相成長方法および気相成長装置
JP2000273631A (ja) * 1999-03-24 2000-10-03 Olympus Optical Co Ltd スパッタリング装置
JP2001035842A (ja) * 1999-07-19 2001-02-09 Sony Corp Ｃｖｄ装置及び半導体装置の製造方法
JP2002280438A (ja) * 2001-03-19 2002-09-27 Ulvac Japan Ltd 真空処理方法

Also Published As

Publication number Publication date
CN100492599C (zh) 2009-05-27
TW200607013A (en) 2006-02-16
DE112005001539T5 (de) 2007-05-16
JP4673308B2 (ja) 2011-04-20
US7682481B2 (en) 2010-03-23
US20070151669A1 (en) 2007-07-05
DE112005001539B4 (de) 2013-04-25
JPWO2006003880A1 (ja) 2008-04-17
KR100808820B1 (ko) 2008-03-03
CN1977363A (zh) 2007-06-06
TWI380356B (https=) 2012-12-21
KR20070032968A (ko) 2007-03-23

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