WO2005104362A1 - 可変整合回路 - Google Patents
可変整合回路 Download PDFInfo
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- WO2005104362A1 WO2005104362A1 PCT/JP2005/007446 JP2005007446W WO2005104362A1 WO 2005104362 A1 WO2005104362 A1 WO 2005104362A1 JP 2005007446 W JP2005007446 W JP 2005007446W WO 2005104362 A1 WO2005104362 A1 WO 2005104362A1
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- inductance
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- resonance
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
- H03H7/40—Automatic matching of load impedance to source impedance
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/16—Circuits
- H04B1/18—Input circuits, e.g. for coupling to an antenna or a transmission line
Definitions
- the present invention relates to a matching circuit capable of electrically controlling impedance conversion in a wireless device using a plurality of wireless frequency bands of the UHF band or higher.
- Multi-banding has been made to use a frequency band that is about twice as large as that, and a frequency band that is about half as 450 MHz. Furthermore, in recent years, a technology called software radio, which can change the characteristics of radio devices such as frequency, antenna power value, radio wave type and the like by software has been studied.
- Japanese Patent Application Laid-Open No. 2001-186042 discloses an example in which a GSM system is used as a target and a wireless device corresponding to three wireless frequency bands of 900 MHz, 1.8 GHz, and 450 MHz is disclosed.
- This conventional wireless device has a configuration in which processing systems for selecting and amplifying signals in three frequency bands are provided in parallel.
- FIG. 9 shows a configuration similar to that of the wireless device described in JP-A-2002-208871.
- matching between the antenna 1 and the transmission / reception circuit 2 is realized by the fixed inductor 4 and the variable capacitor 3, and the choke coil 5, the capacitor 6, and the voltage generation circuit 7 affect the radio frequency signal.
- a bias circuit is formed for changing the capacitance of the variable capacitor 3 without giving.
- This conventional wireless device targets a wireless device that uses the 800 MHz band and the 1.5 GHz band, and is adjusted so as to match the two bands by changing the capacitance value of the variable capacitor 3.
- variable reactance element is only a varactor diode, the variable range of impedance is limited, and it is necessary to adapt to a wide frequency band. Was difficult.
- variable matching circuit of the present invention is used in a wireless device adaptable to heterogeneous wireless networks and multi-band wireless systems, and performs signal processing on a wide frequency band applied to the UHF band power and microwave band. In the high-frequency radio section, appropriate impedance matching is realized.
- variable matching circuit of the present invention provides an inductance circuit including a plurality of inductors.
- a resonance type circuit in which a circuit and a first capacitance circuit having a variable element value are connected in parallel, and a second capacitance circuit having a variable element value, and a first circuit serving as an input or output of a matching circuit.
- a matching circuit is configured as a circuit in which a second capacitance circuit is connected between the terminal and the second terminal, and a resonance type circuit is connected between the first terminal and the ground. Control is performed so that the value is switched to a plurality of values by a combination of a switch and a switch.
- variable matching circuit is configured by connecting a distributed constant line in series with the second capacitance circuit and the resonance type circuit.
- variable matching circuit of the present invention in the L-type or pie-type matching circuit, it is possible to change both the capacitance value of the reactance circuit connected to the series and the inductance value of the reactance circuit connected to the shunt. As a result, a variable matching circuit having a high degree of freedom in adjustment over a wide frequency band can be realized.
- FIG. 1 is a diagram showing a configuration of a variable matching circuit according to Embodiment 1 of the present invention.
- FIG. 2A is a diagram showing a configuration of a resonant circuit 50 of a variable matching circuit according to Embodiment 1 of the present invention.
- FIG. 2B is a diagram showing a frequency characteristic of an inductance value of the resonance circuit according to the first embodiment of the present invention.
- FIG. 2C is a diagram showing a frequency characteristic of an inductance value of the resonant circuit according to Embodiment 1 of the present invention.
- FIG. 3A is a circuit diagram in which a FET and an inductor according to Embodiment 1 of the present invention are connected in series.
- FIG. 3B is a circuit diagram in which the FET and the inductor according to Embodiment 1 of the present invention are connected in series.
- FIG. 3C is a circuit in which an FET and an inductor are connected in series according to Embodiment 1 of the present invention.
- FIG. 6 is a diagram illustrating frequency characteristics of inductance values of FIG.
- FIG. 4A is a diagram showing a configuration of a variable inductance portion of the variable matching circuit according to Embodiment 1 of the present invention.
- FIG. 4B is a diagram showing a configuration of a variable inductance portion of the variable matching circuit according to Embodiment 1 of the present invention.
- FIG. 5A is a diagram showing a configuration of a variable matching circuit according to the first embodiment of the present invention.
- FIG. 5B is a diagram illustrating an impedance conversion region and a resonance type circuit by the variable matching circuit according to the first embodiment of the present invention.
- FIG. 4 is a diagram showing a relationship between inductor components in the circuit.
- FIG. 5C is a Smith chart showing impedance conversion by the variable matching circuit according to the first embodiment of the present invention.
- FIG. 5D is a Smith chart showing impedance conversion by the variable matching circuit according to Embodiment 1 of the present invention.
- FIG. 6 is a diagram showing a configuration of the variable matching circuit according to the second embodiment of the present invention.
- FIG. 7A is a diagram showing a configuration of a variable matching circuit according to the second embodiment of the present invention.
- FIG. 7B is a diagram illustrating an impedance conversion region and a resonance type circuit by the variable matching circuit according to the second embodiment of the present invention.
- FIG. 4 is a diagram showing a relationship between inductor components in the circuit.
- FIG. 7C is a Smith chart showing impedance conversion by the variable matching circuit according to Embodiment 2 of the present invention.
- FIG. 7D is a Smith chart showing impedance conversion by the variable matching circuit according to Embodiment 2 of the present invention.
- FIG. 7E is a Smith chart showing impedance conversion by the variable matching circuit according to Embodiment 2 of the present invention.
- FIG. 8A is a diagram illustrating a configuration of a variable matching circuit according to Embodiment 3 of the present invention.
- FIG. 8B is a diagram illustrating a configuration of a variable matching circuit according to Embodiment 3 of the present invention.
- FIG. 8C is a diagram showing a configuration of a distributed constant line and a resonant circuit according to Embodiment 3 of the present invention.
- FIG. 9 is a diagram showing a configuration of a variable matching circuit according to a conventional technique.
- FIG. 1 is a diagram showing a configuration of the variable matching circuit according to the first embodiment.
- terminals 70 and 71 serve as input and output in variable matching circuit 100 of the present embodiment.
- the capacitor 10 and the varactor diode 11 are a capacitance circuit connected between terminals and having a variable capacitance value, and constitute a second capacitance circuit that is effective in the present invention.
- the resonance type circuit 50 is connected from the terminal 71 to the ground, and includes a capacitance circuit corresponding to the first capacitance circuit, which is composed of the capacitor 30 and the varactor diode 31, and is effective in the present invention, and two inductors 20 and It is configured by connecting in parallel an inductance circuit in which 21 are connected in series.
- An FET (field effect transistor) 40 is connected to the connection point between the inductors 20 and 21 to the ground.
- variable matching times Outside the path 100, an impedance control unit 200 for voltage-controlling the bias of the varactor diodes 11, 31 and the FET 40, an antenna 300 of the wireless device, and a low-noise amplifier 400 of a receiving system are described.
- the resistance elements 81, 82, and 83 are bias resistors that connect the varactor diodes 11, 31 and the FET 40 to the impedance control unit 200.
- a choke inductor or the like may be used in place of the noise resistance.
- FIG. 1 illustrates a part of a reception front end including a variable matching circuit 100 according to the present embodiment.
- the reception front end of the wireless device performs processing to amplify the radio frequency signal received by the antenna 300 with the low-noise amplifier 400, but interposes an impedance conversion circuit so that the impedance of the antenna matches the input impedance of the amplifier.
- a high-frequency signal is transmitted efficiently. It is customary to design the input and output impedance of the high-frequency circuit used in the wireless device to be 50 ⁇ .For the antenna 300, the impedance is set to 50 ⁇ by devising the position and structure of the feeding point. Designed to be.
- a configuration is generally used in which a matching circuit for converting the input impedance of a transistor serving as an amplifying element into 50 ⁇ is added to the input side of the amplifier. It plays the role of the matching circuit.
- the impedance at the gain matching point at which the maximum gain is obtained and the impedance at the noise matching point at which the minimum noise figure is obtained are different. For this reason, it is necessary to convert the input impedance of the amplifier to the impedance point where the noise is minimized under the restriction that the input impedance of the amplifier is about 50 ⁇ and the amount of reflection of the input signal is less than a predetermined amount. For that purpose, accurate impedance adjustment is required.
- variable matching circuit 100 According to the present embodiment, the operation and operation of the variable matching circuit 100 according to the present embodiment will be described.
- the capacitor 10 and the varactor diode 11 connected between the terminals 70 and 71 constitute a capacitance circuit, and are electrically variable by voltage control by the S-impedance controller 200. .
- the anode terminal of the nodal diode 11 is DC-grounded through the inductors 20 and 21, and when the voltage on the power source side is increased, the varactor diode 1 It operates so that the capacitance value of 1 becomes small.
- the capacitor 10 is used to cut off the direct current and at the same time is used to adjust the change width of the capacitance value of the entire variable capacitance element.
- the resonance type circuit 50 connected from the terminal 71 to the ground is a parallel resonance circuit in which the inductance component by the inductors 20 and 21 and the capacitance component by the capacitor 30 and the varactor diode 31 are connected in parallel. It is configured.
- the resonance type circuit 50 operates as an insulated element having an inductive property at a frequency lower than the calculated parallel resonance frequency and a capacitive reactance value at a higher frequency than the inductance component and the capacitance component.
- the value of the capacitance component is continuously variable by the varactor diode 31, and the inductance component is changed to two values by opening and closing the switch by the FET40.
- the inductance component is the sum of L1 and L2 when the FET switch is open and L1 when the FET switch is closed. In this way, the location of the short-circuit and ground changes due to the opening and closing of the switch, and the element value of the inductance circuit can be changed stepwise.
- the resonance type circuit 50 is basically operated in a region where the reactance is inductive, that is, a region where an inductance value is obtained.
- FIG. 2 is a diagram showing a result of analyzing the reactance of the resonance type circuit 50.
- FIG. 2A is a diagram showing a configuration of the resonance circuit 50 of FIG.
- the element value L1 is 1 ⁇
- the element value L2 is 5 nH
- the capacitance component of the varactor diode 31 and the capacitor 30 changes from 1 pF to 6 pF.
- Fig. 2B shows the frequency characteristics of the inductance value of the resonant circuit 50 when the FET 40 is closed and the inductance component is 1 nH
- Fig. 2C shows the case where the FET 40 is open and the inductance component is 6 nH, the sum of L1 and L2. It shows the frequency characteristics of.
- the parallel resonance frequency increases, so that it is possible to use the high frequency as an inductive element.
- the inductance component shown in Fig. 2C is large, the operable frequency is limited to the low band because the parallel resonance frequency becomes low. This makes it easier to set a high inductance value that is effective in the low frequency range.
- a varactor diode 31 and a capacitor 30 serving as a capacitance component in the resonance type circuit 50 This function is unnecessary when the inductance value to be obtained is only two discrete values. It functions to continuously vary the force inductance value. This will be described with reference to FIG. 2B as an example where the capacitance component is 6 pF. Since the inductance component is InH and resonates in parallel near 2 GHz, it becomes inductive at lower frequencies, but the 1GHz force near the resonance frequency changes rapidly between 2GHz.
- the parallel resonance frequency is moved by slightly changing the capacitance of the varactor diode 31, the steep portion of the characteristic curve moves, and the inductance value as seen at one point between 1 GHz and 2 GHz Changes.
- changing the capacitance component from lpF to 6 pF can change the overall inductance value from InH to 2 nH.
- the direction of the change is that if the capacitance is reduced by increasing the control voltage of the inductor 31, the resonance frequency moves to the higher frequency side and the inductance value decreases.If the control voltage is reduced and the capacitance is increased, the resonance frequency increases. The inductance value increases by moving to the low frequency side.
- the inductance cannot be changed in the frequency band of 1 GHz or less in the case shown in FIG. 2B, but when the inductance value shown in FIG.
- the inductance value can be adjusted in the following bands.
- the resonance type circuit 50 can change the inductance value by setting the parallel resonance frequency slightly higher than the operating frequency and changing the capacitance of the noctor diode. , Operates as a reactance element having a variable inductance value.
- the FET 40 has a function of a switch, and has a role of switching an inductance component. Since a relatively large inductance value is effective at a low frequency and a high frequency, the switching function enables an appropriate inductance value to be set at a low frequency or a high frequency. Further, as described above, there is also an effect of realizing the function of changing the inductance value in a wide frequency range.
- the source end of the FET 40 is Connect to inductor to be grounded.
- FIG. 3C shows an example of analyzing the inductance value of a circuit in which a FET and an inductor are connected in series.
- FIG. 3A is a circuit in which the source terminal of the FET 41 is grounded and the inductor 22 is connected to the drain terminal
- FIG. 3B is a circuit in which the connection order is changed and the inductor 22 is connected to the source terminal of the FET 41.
- Figure 3C shows the measurement results of the frequency characteristics of the inductance values of both circuits when the FET is closed.
- the inductor 22 in the characteristic example of FIG. 3C is approximately 4 nH.
- the impedance of the circuit in Fig. 3A in which the source end of the FET is grounded, operates as inductive up to a high frequency range, but the circuit in Fig. 3B resonates in the 3GHz band and the inductive frequency range is narrow.
- the unnecessary resonance is caused by a parasitic reactance component of the FET 41, and has an adverse effect such as narrowing an inductive frequency region and making it difficult to adjust an inductance value.
- the influence of the parasitic reactance component can be reduced, and this unnecessary resonance can be eliminated.
- FIGS. 4A and 4B show another configuration of a resonance type circuit serving as a variable inductance element.
- FIG. 4A shows a circuit in which an inductor 24 and a circuit in which an FET 41 having a source terminal grounded to the inductor 23 are connected in series are connected in parallel.
- this resonance type circuit 51 when the FET 41 is closed, the inductor 23 is added in parallel to the inductor 24, and the inductance 23 changes so that the whole inductance component becomes small.
- the number of inductors that are short-circuited and grounded is changed by opening and closing the switch, and the element value of the inductance circuit can be changed stepwise as a whole.
- the resonance circuit 52 of FIG. 4B is obtained by replacing the capacitor 30 in the resonance circuit 51 of FIG. 4A with a varactor diode 32, and has a configuration in which the force sword terminals of the noractor diodes 31 and 32 are connected to each other. .
- the anode terminal of the inductor 32 is directly grounded via the inductor 24. Then, by performing the bias voltage control on one point on the common force source terminal side, the capacitances of the two varactor diodes can be changed at the same time.
- the circuit example of FIG. 4B is obtained by replacing the capacitor 30 of the resonant circuit 51 of FIG. 4A with a varactor diode. Similarly, the capacitor 30 of the resonant circuit 50 of FIG.
- variable matching circuit 100 in FIG. 1 is a two-terminal circuit having the terminals 70 and 71 as input / output terminals, and a variable capacitance circuit connected between the two terminals; From 71, an L-shaped matching circuit operated by a resonance-type circuit with a variable inductance value connected to the ground is obtained.
- variable matching circuit 100 The operation of the variable matching circuit 100 will be described with reference to FIGS. 5A to 5D.
- FIG. 5A shows the configuration of the variable matching circuit according to the present embodiment.
- 5C and 5D show a Smith chart in which a resistor of 50 ⁇ is connected to the terminal 71, and how the impedance seen from the terminal 70 side is converted by the variable matching circuit 100 by 50 ⁇ . Is shown.
- the circuit shown in FIG. 5A is schematically shown for the sake of simplicity. The actual circuit is the same as that shown in FIG.
- FIG. 5C is a Smith chart showing a region where the impedance is converted at 90 OMHz
- FIG. 5D is a Smith chart showing a region where the impedance is converted at 2 GHz.
- FIG. 5B shows the relationship between the impedance conversion region shown on the Smith chart and the inductor component in the resonance type circuit 50.
- FIG. 5C showing an impedance conversion region of 900 MHz shows that when the inductance component is set to 6 nH, the impedance can be converted to the wide area shown in region B by changing the capacitance circuit. Show me. If the inductance component is InH, a low-impedance element of about 6 ⁇ is added to terminal 71 to ground, so the impedance area to be converted has a low impedance as shown in area A. , The width of change becomes smaller.
- Figure 5D showing the 2 GHz impedance conversion region shows that when the inductance component is InH, the converted impedance can be in the inductive region shown in region C, and when the inductance component is 6 nH, This shows that it can be converted to the capacitive area shown in area D. If the inductance component is not switched and is fixed at 6 nH, a higher impedance of 2 GHz is used for the capacitive impedance. Can't be converted.
- the impedance region that can be converted at 900 MHz is limited as in region A. Therefore, it can be said that a configuration in which the inductance component is switched by a switch, as in the present embodiment, is effective as an impedance change in a wide frequency band, in a resonance type circuit serving as a variable inductance element.
- the variable matching circuit includes a resonance type circuit in which an inductance circuit whose inductance value can be switched by an FET switch and a variable capacitance circuit formed by a varactor diode are connected in parallel. It has a capacitance circuit consisting of a varactor diode connected between two terminals, and an L-type matching circuit is configured by connecting the resonance type circuit from one terminal to ground. In this way, the impedance of the resonant circuit is continuously and greatly changed by the capacitance change of the capacitance circuit of the resonant circuit and the inductance value of the inductance circuit, and the capacitance connected between the two terminals is variable.
- a capacitance circuit that can perform impedance conversion with a high degree of freedom in a wide frequency band can be realized.
- variable matching circuit has a configuration in which one end of a switch constituting a conductance circuit capable of switching to a plurality of element values is grounded, so that an FET or a diode for realizing the switch is provided. It can reduce the effects of parasitic elements existing in such elements.
- FIG. 1 which describes the present embodiment, shows an example in which the variable matching circuit 100 is applied to the matching adjustment between the antenna 300 and the low-noise amplifier 400, but the application is not limited to this part. No.
- a device that can be electrically opened and closed such as a power switching diode, is shown as an example in which a switch by the FET 40 is used to change the inductance value in a step-like manner. It is possible to apply.
- a force switch is shown in which an inductance circuit is configured by using one FET and two inductors. By increasing the number of inductors, configure the inductance circuit so that the inductance value can be switched to three or more values!
- FIG. 6 is a configuration diagram illustrating the variable matching circuit according to the present embodiment. The difference from FIG. 1 is that a resonance circuit 53 as a first resonance circuit according to the present invention and a resonance circuit 54 as a second resonance circuit according to the present invention are provided at both terminals 70 and 71. Is a point.
- the resonant circuits 53 and 54 shown in FIG. 6 are schematically shown for simplicity, the actual circuits are the resonant circuit 50 shown in FIG. 2A and the resonator circuits shown in FIGS. 4A and 4B. It has the same configuration as the circuit 51 or 52.
- the impedance added to the terminal 71 is converted so as to have a desired impedance at the terminal 70. It is assumed that the impedance of the impedance added to the terminal 71 is positive. At this time, assuming that there is no limitation on the change width of the element value, theoretically, a series capacitor as the third capacitance circuit according to the present invention, which includes the capacitor 10 and the varactor diode 11, and the resonance type circuit 53 or By using one of the shunt inductors of the resonance type circuit 54, the resistance component can be converted into any positive impedance.
- the resonance type circuit 53 and the resonance type circuit 54 becomes redundant. Controlling both resonant circuits at the same time is complicated because the number of parameters increases, and the redundant resonant circuit may change the impedance in a direction different from the intended impedance change. It is desirable to minimize the effect of the resonant circuit on impedance conversion.
- the resonance type circuit 53 provided at the two terminals 70 and 71, Of the 54 the resonance type circuit that becomes redundant when converting to the desired impedance is adjusted so as to resonate in parallel at the operating frequency.
- the resonance type circuit Since the resonance type circuit has a configuration of a parallel resonance circuit of LC, it is easy to control so that the capacitance value is continuously variable and parallel resonance occurs at the operating frequency. Since the impedance of the resonance type circuit at the time of the parallel resonance becomes very high, the influence on the impedance conversion of the resonance type circuit becomes small.
- variable matching circuit 110 The operation of the variable matching circuit 110 will be described by taking as an example an impedance conversion in which a terminal 70 side force is also observed when a 50 ⁇ resistor is connected to the terminal 71.
- the capacitance circuit in the variable matching circuit 110 also changes the lpF force to 6 pF, and the resonant circuits 53 and 54 It is assumed that the inductor and the inductance component, which also becomes the switching force, can be switched between InH and 6nH.
- the capacitance components in the resonance circuits 53 and 54 are independently variable from lpF to 6 pF. Then, when the resonance circuit 53 is caused to resonate in parallel at the operating frequency, the circuit becomes the same as that of FIG. 5A, and the impedance conversion regions at 900 MHz and 2 GHz are shown in FIGS. 5C and 5D. On the other hand, when the resonance type circuit 54 is caused to resonate in parallel at the operating frequency, the operation is performed as shown in FIGS. 7A to 7E.
- FIG. 7A is a circuit equivalent to the case where the resonance type circuit 54 of the variable matching circuit 110 is resonated in parallel.
- FIG. 7C is a region where the impedance is converted at 900 MHz.
- FIGS. 7D and 7E are 2 GHz. 3 shows a region where the impedance is converted.
- FIG. 7B shows the relationship between the impedance conversion region shown on the Smith chart and the inductor value in the resonance circuit 53.
- the resistance value can be converted to an impedance larger than approximately 50 ⁇
- the resonance type circuit In the circuit configuration shown in FIG. 7A, which is equivalent to a circuit in which 54 is subjected to parallel resonance, it is possible to convert the resistance value into an impedance smaller than approximately 50 ⁇ . Therefore, a desired conversion can be performed by selecting a resonance type circuit that performs parallel resonance according to the resistance value of the impedance to be converted, and adjusting the other resonance type circuit and the variable capacitance circuit.
- variable matching circuit can be easily adjusted.
- the resonance type circuit is connected in parallel to the ground, and the impedance of the resonance type circuit that resonates in parallel is very high, for example, two resonance type circuits connected in parallel during impedance conversion are used. In the case where one of them changes only in a direction different from the desired impedance change, the influence on the impedance conversion of the resonant circuit can be reduced, and the conversion to the desired impedance can be easily controlled. is there.
- variable matching circuit has a configuration in which one end of a switch constituting a conductance circuit capable of switching to a plurality of element values is grounded, so that an FET or a diode realizing the switch is provided. It can reduce the effects of parasitic elements existing in such elements.
- both resonance circuits may be caused to resonate in parallel to operate so as to perform impedance conversion using only the series capacitor.
- FIG. 8A is a configuration diagram showing a variable matching circuit according to the present embodiment.
- the difference from FIG. 1 is that a distributed constant line 60 is connected between a terminal 71 and a resonance circuit 55, and a terminal 71 and a varactor diode 11 are connected. This is the point where the distributed parameter line 61 is connected between them.
- the resonance type circuit 55 shown in FIG. 8A is schematically shown for simplicity, the actual circuit is the resonance type circuit shown in FIG. 2A. It has the same configuration as the circuit 50, the resonator type circuit 51 shown in FIG. 4A, and the resonance type circuit 52 shown in FIG. 4B.
- the basic operation is the same as that of the variable matching circuit described in the first embodiment.
- variable matching circuit a varactor diode 11 whose capacitance can be changed continuously is used.
- a capacitance circuit corresponding to a second capacitance circuit that works for the present invention is used.
- Parasitic reactance components exist in components such as diodes and chip capacitors, which may cause self-resonance.
- self-resonance in a high frequency band causes a series resonance with zero impedance, so that even at a higher frequency, a low impedance cannot be obtained.
- the impedance can be converted even in the vicinity of the self-resonant frequency of the capacitance circuit or higher or in the frequency band! You.
- variable matching circuit 102 in FIG. 8A is equivalent to the circuit in FIG. 8B when the capacitance circuit resonates in series. Therefore, for the frequency near or higher than the self-resonance frequency of the capacitance circuit, desired impedance conversion can be obtained by using the distributed constant lines 60 and 61.
- the electric length of the distributed constant line effective for impedance conversion is up to about 90 degrees, and the influence of the distributed constant line is small at a low frequency where the self-resonance of the capacitance circuit is not affected. Therefore, although it is necessary to design in consideration of the reactance, it is possible to perform the same operation as that described in the first embodiment.
- the variable matching circuit 102 performs a fixed impedance conversion in which a variable function can be obtained in a high frequency band where impedance conversion is performed by the distributed constant circuit shown in FIG. 8B. It is possible to change and adjust the impedance transformation at any time.
- the distributed parameter line 60 looks like a ground stub, but when the electrical length is smaller than 90 degrees, it is equivalent to an inductor. From this, it is possible to replace the distributed constant line 60 and the resonant circuit 55 with a configuration in which the inductor 80 having a relatively small value is connected to the resonant circuit 55 as shown in FIG. 8C.
- the capacitance circuit having a variable capacitance value is self-contained.
- impedance conversion using distributed constant lines is possible in the frequency band near or higher than the self-resonant frequency, and a variable matching circuit that can adjust impedance conversion with a high degree of freedom in the low frequency band is realized. It becomes possible.
- variable matching circuit can be used even when the impedance of the resonance type circuit connected in parallel is reduced due to the influence of self-resonance of the elements constituting the resonance type circuit.
- the distributed constant line can convert the low impedance to an appropriate reactance value to enable the conversion to a desired impedance, and functions effectively particularly in a high frequency band.
- the distributed constant line 61 is added to the terminal 71 side, it may be added to the terminal 70 side.
- the resonance type circuit may be provided on the force terminal 70 side which shows the example where the resonance circuit is on the terminal 71 side.
- the pie-type matching circuit shown in the second embodiment can be similarly provided with a distributed constant circuit.
- a distributed constant circuit is added between the resonance circuit 53 or the resonance circuit 54 and the capacitance circuit including the capacitor 10 and the varactor diode 11.
- the present invention is useful for a variable matching circuit that performs electrical adjustment of impedance conversion in a wide frequency band over the UHF band and microwave band, It is suitable for configuring a wireless device applicable to a wireless network or a wireless system that performs multiband communication.
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Abstract
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Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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US11/568,188 US7633355B2 (en) | 2004-04-22 | 2005-04-19 | Variable matching circuit |
EP05734630A EP1729412A1 (en) | 2004-04-22 | 2005-04-19 | Variable matching circuit |
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JP2004126633A JP2005311762A (ja) | 2004-04-22 | 2004-04-22 | 可変整合回路 |
JP2004-126633 | 2004-04-22 |
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US (1) | US7633355B2 (ja) |
EP (1) | EP1729412A1 (ja) |
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WO (1) | WO2005104362A1 (ja) |
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US7711337B2 (en) | 2006-01-14 | 2010-05-04 | Paratek Microwave, Inc. | Adaptive impedance matching module (AIMM) control architectures |
JP2008028862A (ja) | 2006-07-24 | 2008-02-07 | Matsushita Electric Works Ltd | 受信器 |
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Also Published As
Publication number | Publication date |
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CN1965475A (zh) | 2007-05-16 |
CN100511987C (zh) | 2009-07-08 |
JP2005311762A (ja) | 2005-11-04 |
US20080238569A1 (en) | 2008-10-02 |
US7633355B2 (en) | 2009-12-15 |
EP1729412A1 (en) | 2006-12-06 |
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