WO2005096356A1 - Suscepteur - Google Patents

Suscepteur Download PDF

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Publication number
WO2005096356A1
WO2005096356A1 PCT/JP2005/005675 JP2005005675W WO2005096356A1 WO 2005096356 A1 WO2005096356 A1 WO 2005096356A1 JP 2005005675 W JP2005005675 W JP 2005005675W WO 2005096356 A1 WO2005096356 A1 WO 2005096356A1
Authority
WO
WIPO (PCT)
Prior art keywords
susceptor
barrel
type
planes
gas
Prior art date
Application number
PCT/JP2005/005675
Other languages
English (en)
Japanese (ja)
Inventor
Tunenobu Kimoto
Hiroyuki Matsunami
Hirokazu Fujiwara
Original Assignee
Toyo Tanso Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Tanso Co., Ltd. filed Critical Toyo Tanso Co., Ltd.
Priority to US10/594,562 priority Critical patent/US20070186858A1/en
Priority to EP05721602A priority patent/EP1732111A4/fr
Priority to CA002558591A priority patent/CA2558591A1/fr
Publication of WO2005096356A1 publication Critical patent/WO2005096356A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Definitions

  • the present invention relates to a susceptor used for epitaxially growing a compound semiconductor such as silicon carbide, gallium nitride, and aluminum nitride, and more particularly, to a uniform epitaxially grown film (hereinafter referred to as “epitaxially grown film”) on a plurality of substrates. Susceptor).
  • a single crystal manufacturing method for growing an epitaxy layer by performing a gas phase reaction of a source gas on a wafer by a chemical vapor deposition method has been implemented.
  • CVD method a single crystal wafer is placed on a susceptor, and the susceptor and the wafer are heated to an epitaxy growth temperature and held.
  • a mixed gas of a carrier gas and a source gas is introduced into the reaction furnace, and the source gas decomposed by the high-temperature deposition is deposited on the wafer to form an epitaxial layer.
  • a vertical vapor phase growth apparatus for flowing gas up and down is often used (for example, see Patent Documents 1 and 2 below).
  • Patent document 1 JP-A-11-176757
  • Patent Document 2 Japanese Patent Publication No. 5-87128
  • an object of the present invention is to provide a susceptor used for semiconductor epitaxial growth and capable of simultaneously obtaining a plurality of highly uniform epi films.
  • the present invention relates to a susceptor used for semiconductor epitaxial growth, comprising: a barrel-type susceptor having a plurality of outer surfaces on which a plurality of substrates can be mounted; and the barrel-type susceptor is disposed inside the susceptor. And a member having a surface that is arranged to be opposed to each of the surfaces of the mold susceptor while being inclined in the same direction.
  • the temperature of each substrate can be kept constant, and a plurality of highly uniform epi films can be obtained at the same time.
  • the present invention is a susceptor used for semiconductor epitaxial growth, wherein a barrel-type susceptor having a plurality of surfaces on which a plurality of substrates can be mounted is provided, and the barrel-type susceptor is arranged on an outer peripheral portion, And a member having a surface which is arranged to be inclined and opposed to each of the surfaces of the barrel type susceptor in the same direction.
  • the temperature of each substrate can be kept constant, and a plurality of highly uniform epi films can be obtained at the same time.
  • a surface of the member on the barrel susceptor side is capable of mounting a plurality of substrates! /.
  • the susceptor of the present invention the barrel type susceptor or Z and the member countries s heater der Rukoto are preferred.
  • each substrate is directly heated so as to have a constant temperature, so that a plurality of highly uniform epi films can be simultaneously obtained more reliably.
  • the susceptor of the present invention also has a substrate containing graphite.
  • the susceptor of the present invention is preferably coated with polycrystalline silicon carbide or polycrystalline tantalum carbide, and when performing semiconductor epitaxial growth by a heating method using a high-frequency coil, the susceptor itself is used as a heat source. Therefore, each substrate can be directly heated so that the temperature becomes constant. As a result, it is possible to more reliably obtain a plurality of highly uniform epi films at the same time.
  • by coating with polycrystalline silicon carbide or polycrystalline tantalum carbide To prevent the release of impurities contained in the susceptor.
  • tantalum carbide when coated with polycrystalline tantalum carbide, tantalum carbide is a material with excellent high-temperature properties and excellent corrosion resistance to hydrogen, so that sublimation of the coating and exposure of graphite can be prevented. In addition, release of impurities can be prevented.
  • FIGS. 1A and 1B are perspective views separately showing components of a susceptor according to a first embodiment of the present invention, wherein FIG. 1A shows a barrel-type inner susceptor, and FIG. 1B shows an outer member.
  • the susceptor 1 shown in FIG. 1 includes an inner susceptor 2 made of graphite as a base material and an outer member 3 made of graphite as a base material. These surfaces are preferably coated with polycrystalline silicon carbide or polycrystalline tantalum carbide.
  • the inner susceptor 2 is formed by joining four oblique sides by inclining four trapezoidal planes each having two concave zigzag portions 4 (all four trapezoidal planes have the same area) at a predetermined angle with respect to the vertical. , So-called barrel type susceptor.
  • the outer member 3 has a substantially similar shape to the inner susceptor 2 and can arrange the inner susceptor 2 therein. Also, when the inner susceptor 2 is disposed inside, four trapezoidal planes that can be arranged in parallel or substantially parallel to each of the trapezoidal planes having the zigzag portion 4 of the inner susceptor 2 (all four trapezoidal planes have the same area). ). That is, the trapezoidal planes of the outer member 3 are each inclined at a predetermined angle with respect to the vertical.
  • the inclination angle of the trapezoidal plane of the inner susceptor 2 is preferably 2-45 ° with respect to the vertical direction, and the inclination angle of the trapezoidal plane of the outer member 3 is preferably 2-45 ° with respect to the vertical direction. It is preferred that Here, in the case of disposing them substantially parallel to each other, it is preferable that the flow path on the gas inlet side is wide and the flow path on the outlet side is narrow. This is achieved, for example, by setting the inclination angle of the trapezoidal plane of the inner susceptor 2 to 12 ° with respect to the vertical direction, and setting the inclination angle of the trapezoidal plane of the outer member 3 to 8 ° with respect to the vertical direction. With such a configuration, heating of the gas can be appropriately suppressed.
  • the distance between the inner susceptor 2 and the outer member 3 is 5-60 mm, preferably 10-25 mm.
  • At least one zigzag part 4 is provided.
  • inner susceptor 2 and outer The number of trapezoidal planes of the member 3 is not limited to four, but may be three or more for each.
  • FIG. 2 is a schematic diagram showing the vicinity of a reaction chamber of an epitaxy growth apparatus using the susceptor of FIG.
  • the susceptor 1 of the first embodiment disposed in the center of the reaction chamber 5 and a heat insulating material disposed on the outer periphery of the susceptor 1 6 are provided.
  • a spiral high-frequency coil 7 is provided on the outer periphery of the reaction chamber 5.
  • the susceptor 1 has an arrangement configuration in which the direction of the outer member in FIG. 1B is turned upside down and the susceptor is put on the inner susceptor in FIG. 1A.
  • the trapezoidal plane of the inner susceptor 2 and the trapezoidal plane of the outer member 3 are adjusted and arranged so as to be parallel or substantially parallel.
  • the heat insulating material 6 is provided between an inner wall of the reaction chamber 5 and an outer peripheral portion of the susceptor 1 in order to prevent heat radiation of the susceptor 1.
  • the high-frequency coil 7 is capable of causing the susceptor 1 to generate heat by applying high frequency to the susceptor 1 which also has a graphite force.
  • a substrate 8 for epitaxy growth is placed on the susceptor 2 of the susceptor 1.
  • the inner susceptor 2 is arranged at the position shown in FIG. 2, and the high-frequency coil 7 is operated to heat the susceptor to a temperature suitable for epitaxial growth.
  • the reaction gas is passed between the inner susceptor 2 and the outer member 3 of the susceptor 1 (see the arrow in FIG. 2).
  • the susceptor of the first embodiment since the susceptor of the first embodiment is used in the semiconductor epitaxial growth process, the temperature of each substrate can be kept constant, and a plurality of highly uniform epi films can be obtained simultaneously. it can.
  • the release of impurities contained in the susceptor which also has a graphite force can be prevented.
  • tantalum carbide when coated with polycrystalline tantalum carbide, tantalum carbide is a material with excellent high-temperature properties and excellent corrosion resistance to hydrogen, so that sublimation of the coating and exposure of graphite can be prevented.
  • the release of impurities can be prevented.
  • the inner susceptor 2 or Z and the outer member 3 may be used as a heater.
  • FIGS. 4A and 4B are perspective views separately showing constituent articles of a susceptor according to a second embodiment of the present invention, wherein FIG. 4A shows an inner member, and FIG. 4B shows a barrel-type outer susceptor.
  • the susceptor 9 shown in FIG. 2 includes an inner member 10 made of graphite as a base material and an outer susceptor 11 made of graphite as a base material. These surfaces are preferably coated with polycrystalline silicon carbide or polycrystalline tantalum carbide.
  • the outer susceptor 11 is configured by inclining four trapezoidal planes (three trapezoidal planes all having the same area) each having the zigzag portion 12 at a predetermined angle with respect to the vertical, and connecting the hypotenuses.
  • the inner member 10 has a substantially similar shape to the outer susceptor 11 and can be disposed inside the outer susceptor 11. Also, when the inner member 10 is disposed inside, four trapezoidal planes that can be arranged in parallel or substantially parallel to each of the trapezoidal planes having the zigzag portion 12 of the outer susceptor 11 (all four trapezoidal planes are the same). Area). That is, the trapezoidal planes of the inner member 10 are each inclined at a predetermined angle with respect to the vertical.
  • the inclination angle of the trapezoidal plane of the inner member 10 is preferably 2-45 ° with respect to the vertical direction
  • the inclination angle of the trapezoidal plane of the outer susceptor 11 is preferably 2-45 ° with respect to the vertical direction.
  • the flow path on the gas inlet side is wide and the flow path on the outlet side is narrow. This is achieved, for example, by setting the inclination angle of the trapezoidal plane of the inner susceptor 2 to 12 ° with respect to the vertical direction, and setting the inclination angle of the trapezoidal plane of the outer member 3 to 8 ° with respect to the vertical direction. With such a configuration, heating of the gas can be appropriately suppressed.
  • the distance between the inner susceptor 2 and the outer member 3 is 5-60 mm, preferably 10-25 mm. In addition, it is sufficient that at least one zag part 12 is provided. Furthermore, the number of trapezoidal planes of the inner susceptor 2 and the outer member 3 is not limited to four, but may be three or more each.
  • the susceptor 9 according to the present embodiment can be applied instead of the susceptor 1 in the reaction chamber 5 of the epitaxy growth apparatus in FIG. Thereby, the same effect as in the first embodiment can be obtained. Further, as a modification of the present embodiment, the inner member 10 or Z and the outer susceptor 11 may be used as a heater.
  • a susceptor 13 to which the inner susceptor 2 in FIG. 1 and the outer susceptor 11 in FIG. 2 are applied may be used. This susceptor 13 can be applied in place of the susceptor 1 in the reaction chamber 5 of the epitaxial growth apparatus in FIG.
  • the substrate when placed in a direction against gravity, it may be fixed using a pin or the like so as not to drop.
  • a single-crystal silicon carbide wafer having a diameter of 2 inches was placed on each of the zalls provided on the inner surface of the six barrel-type susceptors, and the susceptors were placed at predetermined locations. H gas in the reaction chamber
  • H gas as a carrier gas is supplied from a source gas supply port (not shown) to Ar gas as an inert gas.
  • the reaction chamber was maintained at 100 Torr by introducing from a supply port (not shown). H gas and Ar gas are exhausted
  • the gas is continuously discharged from an air port (not shown), and the pressure in the reaction chamber is controlled by a pressure control valve (not shown) provided downstream of the exhaust port.
  • the susceptor was heated to 1350 ° C. At this time, the temperature in the furnace was measured on the wafer surface by a radiation thermometer. A small amount of source gas with a force of 1350 ° C or higher was introduced from a supply port (not shown) to suppress damage due to H etching of silicon carbide wafers. In this case, the source gas contains SiH Was used. Because the susceptor is a heating source and heat insulation is installed, the heating efficiency is improved.
  • a taxi layer could be obtained.
  • the supply of 05 sccm started the formation of the epitaxial layer.
  • the conditions for forming the silicon carbide epitaxial layer were as follows: a growth temperature of 1835 ° C, a growth pressure of 100 Torr, a CZSi ratio of 0.75, a SiHZH ratio of 0.4 mol%, and a CH / H ratio of 0.1 mol%. Grew up for 4 hours.
  • FIG. 6 shows the film thickness and surface roughness distribution of the silicon carbide epitaxal layer in the direction (a) parallel to the gas flow and in the direction (b) perpendicular to the gas flow. Except for the edges, good uniformity of 2-4% was obtained at ⁇ ⁇ . This is an effect that the temperature uniformity of the wafer is improved by using the susceptor as a heating source and installing a heat insulating material. Note that RMS in FIG. 6 means root mean square roughness, and the same applies hereinafter.
  • the growth rate increases in proportion to the SiH flow rate, resulting in a high-speed growth of 44 mZh.
  • the RMS here is in the range of 10 ⁇ 10 ⁇ m 2 .
  • FIG. 1 is a perspective view separately showing components of a susceptor according to a first embodiment of the present invention, wherein (a) shows a barrel-type inner susceptor, and (b) shows an outer member.
  • FIG. 2 is a schematic view showing the vicinity of a reaction chamber of an epitaxy growth apparatus using the susceptor of FIG. 1.
  • FIG. 3 is a view showing a modification of FIG. 2.
  • FIG. 4 is a perspective view separately showing constituent articles of a susceptor according to a second embodiment of the present invention, wherein (a) is an inner member, and (b) is a barrel-type outer susceptor.
  • FIG. 5 is a diagram showing a modified example of the susceptor according to the first embodiment of FIG. 1 and the susceptor according to the second embodiment of FIG. 4.
  • FIG. 6 is a graph showing the relationship between the thickness of the epitaxy layer and the surface roughness distribution according to the example of the present invention, where (a) is a direction parallel to the gas flow direction, and (b) is a gas direction. 4 is a graph showing the relationship between the thickness of the epitaxial layer and the surface roughness distribution in the direction perpendicular to the flow direction.
  • FIG. 7 is a graph showing the SiH flow rate dependence of the growth rate of the thickness of the epitaxial layer and the surface roughness according to the example of the present invention.
  • FIG. 8 is a graph showing the doping density distribution of the epitaxial layer according to the example of the present invention, wherein (a) is a direction parallel to the gas flow direction, and (b) is a direction perpendicular to the gas flow direction. 6 is a graph showing the doping density distribution of the epitaxial layer in the direction.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Il est prévu un suscepteur servant à la croissance épitaxiale d’un semi-conducteur, permettant d’obtenir une pluralité de films de croissance épitaxiale extrêmement uniformes dans le même temps. Le suscepteur sert à la croissance épitaxiale d’un semi-conducteur, et se compose d’un suscepteur de type barillet, ayant une pluralité de plans sur lesquels on peut disposer librement une pluralité de substrats sur le côté externe, et d’un élément, dont le suscepteur de type barillet est à l’intérieur et possède des plans faisant face à chaque plan du suscepteur de type barillet en s’inclinant dans la même direction. Une autre solution consiste à ce que le suscepteur se compose d’un suscepteur de type barillet, ayant une pluralité de plans sur lesquels on peut disposer librement une pluralité de substrats sur le côté interne, et d’un élément, dont le suscepteur de type barillet est situé sur la partie circonférentielle externe et possède des plans faisant face aux différents plans du suscepteur de type barillet en s’inclinant dans la même direction.
PCT/JP2005/005675 2004-03-31 2005-03-28 Suscepteur WO2005096356A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US10/594,562 US20070186858A1 (en) 2004-03-31 2005-03-28 Susceptor
EP05721602A EP1732111A4 (fr) 2004-03-31 2005-03-28 Suscepteur
CA002558591A CA2558591A1 (fr) 2004-03-31 2005-03-28 Suscepteur

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004106950A JP4551106B2 (ja) 2004-03-31 2004-03-31 サセプタ
JP2004-106950 2004-03-31

Publications (1)

Publication Number Publication Date
WO2005096356A1 true WO2005096356A1 (fr) 2005-10-13

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PCT/JP2005/005675 WO2005096356A1 (fr) 2004-03-31 2005-03-28 Suscepteur

Country Status (8)

Country Link
US (1) US20070186858A1 (fr)
EP (1) EP1732111A4 (fr)
JP (1) JP4551106B2 (fr)
KR (1) KR101030422B1 (fr)
CN (1) CN100468631C (fr)
CA (1) CA2558591A1 (fr)
TW (1) TW200537602A (fr)
WO (1) WO2005096356A1 (fr)

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JP4551106B2 (ja) * 2004-03-31 2010-09-22 東洋炭素株式会社 サセプタ
US20080314319A1 (en) * 2007-06-19 2008-12-25 Memc Electronic Materials, Inc. Susceptor for improving throughput and reducing wafer damage
US8404049B2 (en) 2007-12-27 2013-03-26 Memc Electronic Materials, Inc. Epitaxial barrel susceptor having improved thickness uniformity
CN102312198B (zh) * 2010-06-30 2013-08-21 上方能源技术(杭州)有限公司 一种蒸镀源及蒸镀镀膜装置
CN102560434B (zh) * 2010-12-13 2014-10-22 北京北方微电子基地设备工艺研究中心有限责任公司 金属有机化合物化学气相沉积设备
JP2013055201A (ja) * 2011-09-02 2013-03-21 Tokyo Electron Ltd 熱処理装置
JP5880297B2 (ja) * 2012-06-07 2016-03-08 三菱電機株式会社 基板支持体、半導体製造装置
KR101431606B1 (ko) * 2014-02-24 2014-08-22 (주)앤피에스 기판 처리 장치
CN106337204B (zh) * 2015-07-17 2018-11-06 中国科学院苏州纳米技术与纳米仿生研究所 石墨托以及装有石墨托的晶体生长炉
JP7247749B2 (ja) * 2019-05-27 2023-03-29 住友金属鉱山株式会社 炭化ケイ素多結晶膜の成膜方法、サセプタ、及び、成膜装置

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CN100468631C (zh) 2009-03-11
JP4551106B2 (ja) 2010-09-22
TW200537602A (en) 2005-11-16
CA2558591A1 (fr) 2005-10-13
KR101030422B1 (ko) 2011-04-20
KR20060131921A (ko) 2006-12-20
TWI376730B (fr) 2012-11-11
CN1938822A (zh) 2007-03-28

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