TW200537602A - Susceptor - Google Patents
Susceptor Download PDFInfo
- Publication number
- TW200537602A TW200537602A TW094110103A TW94110103A TW200537602A TW 200537602 A TW200537602 A TW 200537602A TW 094110103 A TW094110103 A TW 094110103A TW 94110103 A TW94110103 A TW 94110103A TW 200537602 A TW200537602 A TW 200537602A
- Authority
- TW
- Taiwan
- Prior art keywords
- sensor
- inductor
- barrel
- type
- planes
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
- C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/14—Substrate holders or susceptors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
200537602 (1) 九、發明說明 【發明所屬之技術領域】 本發明係,有關於將碳化矽、氮化鎵、氮化錫化合物 半導體,加以磊晶成長時所使用之感應器;特別係有關於 在複數的基板上可以各自得到均勻的嘉晶成長膜(以下簡 稱磊晶膜)之感應器。 Φ 【先前技術】 先前,半導體製造工程在晶圓上,係實施有使用化學 氣相成長法(c V D法),將原料氣體氣相反應,讓磊晶 層成長的單結晶製造方法。具體而言,CVD法係在感應 器上放置單結晶晶圓,將感應器與晶圓加熱並保持到磊晶 成長的溫度爲止。然後,將載體氣體及原料氣體的混合氣 體導入反應爐內,在高溫化下分解的原料氣體在晶圓上堆 積而形成磊晶層。對於能高速形成厚的磊晶層的反應爐, • 係經常使用使氣體上下流出的縱向之氣相成長裝置。(例 如、參考以下載專利文獻1、2 )。 專利文獻1 :日本特開平1 1 - 1 7675 7號公報 專利文獻2 :日本公開平5 - 8 7 1 2 8號公報 【發明內容】 發明所欲解決之課題 然而,先前之技術中,感應器之複數基板和與此等基 板對向的壁面間’距離有極大的差異,因此各基板間容易 -5- 200537602 (2) 產生溫度差。因此,基板間的磊晶膜成長的速度會有差異 ,使磊晶膜的厚度變的不同,而難以同時複數獲得同一品 質的磊晶膜。 因此,本發明的目的係提供一種用於半導體磊晶成長 ,可同時並複數得到均一性較高之磊晶膜的感應器。 用以解決課題之手段 # 本發明係被用在半導體磊晶成長的感應器;其特徵係 由在外側具有複數可自由裝置複數基板之面的桶型感應器 ;和其內部配置有上述桶型感應器,並具有分別對上述桶 型感應器的上述面各自以同方向傾斜配置之面的構件,所 構成。 依照上述的構成,將本發明之感應器用於半導體磊晶 成長工程時,係可使各基板的溫度保持一定,而同時複數 得到均一性較高的磊晶膜。 ® 本發明,係被用在半導體磊晶成長的感應器;其特徵 係由在內側具有複數可自由裝置複數基板之面的桶型感應 器;和其外周部配置有上述桶型感應器,並具有分別對上 述桶型感應器的上述面各自以同方向傾斜配置之面的構件 ,所構成。 依照上述的構成,將本發明之感應器用於半導體磊晶 成長的工程時,係可使各基板的溫度保持一定,而可以同 時複數得到均一性較高的磊晶膜。 本發明之感應器中,上述構件其上述感應器側的面, -6 - 200537602 (3) 係以可自由裝置複數基板者爲佳。 依照上述的構成,可同時得到更多均一性較高的磊晶 膜。 本發明之感應器中,上述桶型感應器或/以及上述部 材,係以加熱器者爲佳。 依照上述的構成,因直接使各基板之溫度成爲一定地 來加熱,故可同時複數獲得均一性更高之磊晶膜。 II 本發明的感應器,係以含有石墨之基材所構成爲佳。 又,本發明的感應器,係由多結晶的碳化矽及多結晶的碳 化鉅所覆蓋者爲佳。 進行使用高頻線圈之加熱方法的半導體磊晶成長時, 因感應器可以本身當成熱源,故可直接使各基板加熱到一 疋溫度。以此結果來ό兌’可更確貫的同時複數得到局均一* 性的嘉晶膜。又,以多結晶碳化砂或多結晶碳化鉬來覆蓋 ,可防止石墨所製造的感應器中雜質的釋放。特別以多結 • 晶碳化鉅覆蓋時,碳化鉅係對於高溫較有優越性的材料, 針對氫也有較好的耐蝕性’故可以防止覆蓋材的昇華或是 石墨之露出,也可以防止雜質的釋放。 【實施方式】 以下參考圖面,說明有關本發明的實施方式。 第1圖’係分別表示本發明第1實施方式之感應器之 構成物品的立體圖;(a )係桶型之內感應器,(b )係外 側構件。 200537602 (4) 第1圖所示的感應器1,係由以石墨爲基材 器2,及以石墨爲基材的外側部材3所構成。此 面,係以多結晶碳化矽或多結晶碳化鉅所覆蓋者 內感應器2,係將4塊具有2個凹狀之座孔 形平面(四塊梯形平面全爲相同面積),對垂直 度傾斜,將傾斜邊群相互結合構成,也就是成爲 器。 ® 外側構件3,係與內感應器2略爲類似的形 可將感應器2裝設配置在其內部者。又,將感應 在其內部時,各自對於內感應器2之具有座孔部 平面,係具有可平行或約略平行配置的梯形平面 塊梯形平面全爲相同面積)者。亦即,外側構件 平面,係各自相對於垂直的被傾斜特定角度者。 另外,內感應器2的梯形平面的傾斜角度, 於垂直方向的2〜4 5 °爲佳;,外側構件3的梯 ^ 傾斜角度,係以相對於垂直方向的2〜4 5。爲佳 以略平行來對向配置時,係以氣體入口側的流路 口側的流路較狹窄者爲佳。這是因爲,例如若內 的梯形平面的傾斜角度是相對於垂直的角度1 2。 構件3的梯形平面的傾斜角度爲相對於垂直的角 可達成。以這樣的構成方式,可以適度抑制氣體 且內感應器2與外側構件3間的平面間的距離 m m、理想上爲1 〇〜2 5 m m。 又座孔部4設置一個以上即可。更且,內感 的內感應 等之的表 爲佳。 部4的梯 以特定角 桶型感應 狀,而爲 器2裝置 4的梯形 4片(四 3的梯形 係以相對 形平面的 。在此, 較廣,出 感應器2 ,則外側 度8 °即 的加熱。 係 5〜6 0 應器2及 -8- 200537602 (5) 外側構件3的梯形平面的片數並不限定爲4片,各自爲3 片以上即可。 接下來,說明使用第一實施方式之感應器的磊晶成長 裝置。第2圖係表示第1圖的磊晶成長裝置的反應室附近 的槪略圖。 第2圖所示的磊晶成長裝置的反應室5的內部’係設 置有被配置於反應室5中心部之第1實施方式的感應器1 H ,及被配置於感應器1的外周部之隔熱材6。反應室5的 外周部,係設置有螺旋狀的高頻線圈7。 感應器1,係將第1圖(b )的外側部材的方向加以 上下反轉,以此覆蓋第1圖(a )之內感應器的配置構成 。另外,使內感應器2的梯形平面與外側構件3的梯形平 面,成平行或略平行地加以調整配置。 隔熱材6係爲了防止感應器1的放熱’而設置在反應 室5的內壁與感應器1的外周部之間。 ® 高頻線圈7,係將高頻波以石墨所構成的感應器1 ’ 而可使感應器1發熱者。 接下來參考第2圖,說明使用了第1實施方式的感應 器之磊晶成長。 首先,在感應器1的內感應器2中’裝置用以晶晶成 長的基板8。接下來,於第2圖的位置裝置內感應器2 ’ 使高頻線圈7運轉,將感應器加熱到磊晶成長的最適當的 溫度。然後使反應氣體,通過感應器1中內感應器2與外 側構件3之間。(參考第2圖的箭號) -9- 200537602 (6) 若依上述構成,因對半導體嘉晶成長工程使用第1實 施方式的感應器,故可使各基板溫度一定,也同時可複數 得到均一性高的磊晶膜。又,以多結晶碳化矽或多結晶碳 化鉅覆蓋,可防止由石墨所構成的感應器中雜質的釋放。 特別係以多結晶碳化鉬來覆蓋時,碳化鉅係高溫特性較好 的材料,且對於氫也具備優良耐蝕性,故可以防止覆蓋材 的昇華或是石墨的暴露,而可防止雜質的釋放。 Φ 另外,作爲本實施方式的變形例,亦可將內感應器2 或/及外側構件3作爲加熱器。 又,作爲感應器5內的配置之變形例,亦可如第3圖 所示,將第2圖的感應器1與隔熱材6加以上下翻轉的構 成亦可。此時,反應氣體之流動方向係從下往上的流向。 (參考第3圖的箭頭) 接下來,說明本發明之第2實施方式的感應器。 第4圖,係個別表示本發明第2實施方式的感應器之 ^ 各個構成物品的立體圖,(a )係內側構件,(b )係桶型 之外感應器。 第2圖所標示之感應器9,係由以石墨作爲基材的內 側構件1 〇,與以石墨作爲基材的外感應器1 1所構成。此 等的表面’係以多結晶碳化矽或係多結晶碳化鉅所覆蓋爲 佳。 外感應器1 1,係將具有座孔部1 2的梯形平面四片( 4片梯形平面全部面積相同)各自以相對於垂直的特定角 度傾斜,而將斜邊彼此相互結合所構成。 -10- 200537602 (7) 內側部材1 〇,係與外感應器l 1爲略相似的形狀,而 爲可配置在外感應器11的內部者。內側部材1 0裝置在內 部時,係分別對於外感應器1 1其具有座孔部1 2的梯形平 面,具有可各自以平行或略平的相對配置的梯形平面4片 (4片梯形平面全部面積相同)者。亦即內側構件1 〇之 梯形平面,係分別對垂直以特定方向傾斜者。 另外,內側構件1 〇的梯形平面其傾斜角度,係以相 B 對於垂直的2〜4 5 °爲佳;而外側構件1 1的梯形平面其傾 斜角度,係以相對於垂直的2〜4 5。爲佳。在此,以略平 行的對向配置時,係以氣體入口側的流路較廣,而出口側 的流路較狹窄者爲佳。這是因爲,例如將內感應器2的梯 形平面的傾斜角度,作爲相對於垂直的角度1 2。,則外側 構件3的梯形平面的傾斜角度,可由相對於垂直的角度8 °達成。以這樣的構成,可以適度抑制氣體的加熱。且內 感應器2與外側構件3間的平面間的距離係5〜60 mm, 而以10〜25mm爲佳。 又’座孔部1 2係設置個以上即可。更且,內感應器 2及外側構件3的梯形平面的片數並不限定爲4片,各自 爲3片以上即可。 本實施方式的感應器9,係可取代第2圖之磊晶成長 裝置的反應室5內之感應器1而適用。依此,可得到與第 1實施方式同樣的效果。又以本實施方式的變形例來說, 內側構件1 0或/及外感應器1 1也可作爲加熱器。 以桌1貫施方式及第2實施方式的變形例來說,亦可 -11 - 200537602 (8) 爲將第1圖的內感應器2與第2圖的外感應器11,作爲 已適用的感應器1 3之構成。此感應器1 3 ’係可以取代第 2圖中磊晶成長裝置的反應室5內的感應器1而適用。 又,以與重力相反方向裝置基板時’亦可使用針等使 其不會掉落而固定。 實施範例 • 取代第1圖的四面的桶型感應器1,以使用六面的桶 型感應器(不圖示)之桶型氣相反應裝置’表示其磊晶層 之形成的一個實施例。在此,說明以化合物半導體之一亦 即碳化矽的磊晶層形成。 在六面桶型感應器的內面設置各座孔中’分別放置直 徑2吋的單結晶碳化矽晶圓,而將感應器放置在特定的場 所。反應室內在以H2氣體轉換過後,進行真空吸引到達 5xlCT6 Torr。真空吸引後,將載體氣體亦即H2氣體從原 • 料氣體供給口(不圖示),而將惰性氣體亦即Ar氣體從 非活氣體供給口(不圖示)加以導入’將感應器內保持在 1 00 Tori*。H2氣體與Ar氣體從排氣口(不圖示)連續排 出,藉由被設置在在排氣口的下游之壓力閥’來控制反應 室內壓力。 對螺旋狀的高頻感應線圈7投入電力將感應器加熱’ 升溫達到1 3 5 0 °C爲止。此時爐內溫度,係藉由放射溫度 計來測定晶圓面上的溫度。溫度從1 3 5 0 °C以上開始’則 從供給口導入少量的原料氣體,抑制碳化矽晶圓的由& -12- 200537602 (9) 蝕刻所造成的傷害。在此情況下,使用SiH4與C3H8作爲 原料氣體。將感應器作爲加熱源或設置隔熱材的情況下, 不只加熱效率好而節省消耗電力,亦可由急速升溫來抑制 升溫中晶圓由氫蝕刻所造成的傷害。結果,可以得到高品 質的磊晶層。 更且,作爲磊晶層成長溫度,將感應器與晶圓加熱至 高溫的1 8 3 5 °C後,則使爐內保持一定溫度。以感應器當 Φ 作加熱源直接將晶圓加熱,或設置隔熱材,係可大幅增加 加熱效率,故在急速升溫,高溫下之磊晶成長係爲可能。 此時,將SiH4的流量增加爲120 seem,C3H8的流量增加 爲30 seem,供給摻雜氣體亦即N2氣體0.05 seem,而開 始磊晶層之形成。碳化矽磊晶層之形成條件,係成長溫度 爲 1835 °C,成長壓力爲 100 Tori*,C/Si 比爲 0.75,SiH4 /H2 比爲 〇·4 mol%、C3H8/H2 比爲 0.1 mol% ’ 成長時 間爲4小時。 Φ 此時的成長速度是3 3 // m/ h,而4小時的成長可形 成厚度約爲1 3 0 // m的磊晶層。厚的碳化矽磊晶層的表面 型悲爲鏡面,而可形成無表面大缺損、局品質的嘉晶層。 又,第6圖表示碳化矽磊晶層中,對於(a )氣體流的平 行方向與(b )直交方向其膜厚度及表面粗糙度的分佈。 若排除邊緣部,係可得σ / m爲2〜4 %的良好均一性。 這係因將感應器作爲加熱源使用或設置隔熱材,而使晶圓 溫度均一性的改善的效果。另外,第6圖中所謂RM S係 平均方根粗糙度,以下係相同。 -13- 200537602 (10) 依1 83 5°c的成長條件,調查Sitl4流量與 關係,係如第7圖,成長速度依S i Η 4流量的 而得到4 4 // m / h的高速成長。這是因將感應 源’故可將晶圓附近用以反應的原料氣體,有 所帶來的效果。即使在供給多量的SiH4的44 , 況下,亦可得〇 · 3 nm之平坦表面型態。此處 於1 0 X 1 0 // m2的範圍。 又’調查碳化矽磊晶層的摻雜密度分佈後 圖’對於氣體的流向,可進行平行方向與直交 X 1 014cm_3的高純度領域之摻雜控制。因爲感 的有效加熱或隔熱材的設置,使加熱效率大幅 低加熱的負擔並抑制感應器內璧的劣化的效果 摻雜密度的分佈可得2〜5 %的良好均一性。 感應器作爲加熱源直接對晶圓加熱,或隔熱材 使晶圓面內溫度的均一性提升的效果。 另外’本發明係在不超脫專利申請範圍的 計變更者,而非限制在上述實施型態與實施例| 【圖式簡單說明】 [第1圖]係分別表示本發明的第1實施方 其構成物品的立體圖。(a )係桶型內感應器, 側構件。 [第2圖]係表示使用第1圖之感應器的磊 其反應室附近的槪略圖。 成長速度的 比例增加, 器作爲加熱 效加熱分解 (/ m / h之情 RMS,係在 ,係如第8 方向同爲5 應器與晶圓 上升,而減 。又,針對 這是因爲以 的設置,而 範圔內可設 內者。 式之感應器 (b )係外 晶成長裝置 -14- 200537602 (11) [第3圖]係表示第2圖的變形例的圖。 [第4圖]係分別表示本發明的第2實施方式之感應器 的構成物品。(a )係內側構件,(b )係桶型的外感應器 〇 [第5圖]係第1圖的第1實施型態的感應器與第4圖 的第2實施方式的感應器之變形例的圖。 [第6圖]係表示本發明中的磊晶層的膜厚與表面粗糙 度的分佈關係線圖。(a )係對氣體流向之平行方向’ (b )係對氣體流向的垂直方向,表示其磊晶層的膜厚成長速 度與表面粗糙度分佈之關係關係的線圖。 [第7圖]本發明的實施範例中,表示磊晶層的膜厚成 長速度與表面的粗糙度,其與SiH4的流量相關性的線圖 〇 [第8圖]係表示本發明的實施範例其磊晶層的摻雜密 度分佈的線圖,(a )係對氣體流向之平行方向,(b )係 對氣體流向之垂直方向,表示其磊晶層的摻雜密度分佈之 線圖。 【主要元件符號說明】 1、9、13 感應器 2 內感應器 外側構件 座孔部 反應室 -15- 200537602 (12) 6 隔 熱 材 7 筒 頻 線 圈 8 基 板 10 內 側 構 件 11 外 感 應 器 12 座 孔 部
Claims (1)
- 200537602 (1) 十、申請專利範圍 1. 一種感應器’係被用在半導體磊晶成長的感應器 ;其特徵係由在外側具有複數可自由裝置複數基板之面的 桶型感應器;和其內部配置有上述桶型感應器,並具有分 別對上述桶型感應器的上述面各自以同方向傾斜配置之面 的構件,所構成。 2· —種感應益’係被用在半導體嘉晶成長的感應器 ;其特徵係由在內側具有複數可自由裝置複數基板之面的 桶型感應器;和其外周部配置有上述桶型感應器,並具有 分別對上述桶型感應器的上述面各自以同方向傾斜配置之 面的構件,所構成。 3 ·如申請專利範圍第1項或第2項所記載之感應器 ’其中’上述構件其上述感應器側的面,係可自由裝置複 數基板者。 4 ·如申請專利範圍第1項或第2項所記載之感應器 ’其中’上述桶型感應器或/以及上述部材,係加熱器者 〇 5 .如申請專利範圍第1項或第2項所記載之感應器 ,其中,係由含有石墨之基材所構成者。 6 .如申請專利範圍第5項所記載之感應器,其中, 係由多結晶碳化矽或多結晶碳化鉅所覆蓋者。 -17-
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EP1732111A1 (en) * | 2004-03-31 | 2006-12-13 | Toyo Tanso Co., Ltd. | Susceptor |
TWI503869B (zh) * | 2010-12-13 | 2015-10-11 | Beijing Nmc Co Ltd | Chamber components and chemical vapor deposition equipment containing their organic compounds |
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US20080314319A1 (en) * | 2007-06-19 | 2008-12-25 | Memc Electronic Materials, Inc. | Susceptor for improving throughput and reducing wafer damage |
US8404049B2 (en) | 2007-12-27 | 2013-03-26 | Memc Electronic Materials, Inc. | Epitaxial barrel susceptor having improved thickness uniformity |
CN102312198B (zh) * | 2010-06-30 | 2013-08-21 | 上方能源技术(杭州)有限公司 | 一种蒸镀源及蒸镀镀膜装置 |
JP2013055201A (ja) * | 2011-09-02 | 2013-03-21 | Tokyo Electron Ltd | 熱処理装置 |
JP5880297B2 (ja) * | 2012-06-07 | 2016-03-08 | 三菱電機株式会社 | 基板支持体、半導体製造装置 |
KR101431606B1 (ko) * | 2014-02-24 | 2014-08-22 | (주)앤피에스 | 기판 처리 장치 |
CN106337204B (zh) * | 2015-07-17 | 2018-11-06 | 中国科学院苏州纳米技术与纳米仿生研究所 | 石墨托以及装有石墨托的晶体生长炉 |
JP7247749B2 (ja) * | 2019-05-27 | 2023-03-29 | 住友金属鉱山株式会社 | 炭化ケイ素多結晶膜の成膜方法、サセプタ、及び、成膜装置 |
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JPH01125923A (ja) * | 1987-11-11 | 1989-05-18 | Sumitomo Chem Co Ltd | 気相成長装置 |
JP2849642B2 (ja) * | 1989-09-26 | 1999-01-20 | 豊田合成株式会社 | 化合物半導体の気相成長装置 |
JPH03131017A (ja) * | 1989-10-17 | 1991-06-04 | Fujitsu Ltd | 気相成長装置 |
US5104690A (en) | 1990-06-06 | 1992-04-14 | Spire Corporation | CVD thin film compounds |
JPH04241415A (ja) * | 1991-01-14 | 1992-08-28 | Furukawa Electric Co Ltd:The | 気相成長装置 |
JPH06188195A (ja) * | 1992-12-16 | 1994-07-08 | Sumitomo Chem Co Ltd | 気相成長装置 |
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JPH11157989A (ja) * | 1997-11-25 | 1999-06-15 | Toyo Tanso Kk | 気相成長用サセプター及びその製造方法 |
JPH11176757A (ja) * | 1997-12-11 | 1999-07-02 | Shimada Phys & Chem Ind Co Ltd | バレル型気相成長装置 |
IL125690A0 (en) * | 1998-08-06 | 1999-04-11 | Reiser Raphael Joshua | Furnace for processing semiconductor wafers |
JP3659564B2 (ja) * | 1999-10-26 | 2005-06-15 | 財団法人電力中央研究所 | 半導体結晶の製造方法およびこれを利用する製造装置 |
JP4551106B2 (ja) * | 2004-03-31 | 2010-09-22 | 東洋炭素株式会社 | サセプタ |
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EP1732111A4 (en) * | 2004-03-31 | 2009-11-04 | Toyo Tanso Co | susceptor |
TWI503869B (zh) * | 2010-12-13 | 2015-10-11 | Beijing Nmc Co Ltd | Chamber components and chemical vapor deposition equipment containing their organic compounds |
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KR20060131921A (ko) | 2006-12-20 |
CN100468631C (zh) | 2009-03-11 |
CA2558591A1 (en) | 2005-10-13 |
EP1732111A4 (en) | 2009-11-04 |
EP1732111A1 (en) | 2006-12-13 |
TWI376730B (zh) | 2012-11-11 |
WO2005096356A1 (ja) | 2005-10-13 |
JP2005294508A (ja) | 2005-10-20 |
US20070186858A1 (en) | 2007-08-16 |
CN1938822A (zh) | 2007-03-28 |
KR101030422B1 (ko) | 2011-04-20 |
JP4551106B2 (ja) | 2010-09-22 |
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