WO2005083490A1 - 顕微鏡及び試料観察方法 - Google Patents
顕微鏡及び試料観察方法 Download PDFInfo
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- WO2005083490A1 WO2005083490A1 PCT/JP2005/003163 JP2005003163W WO2005083490A1 WO 2005083490 A1 WO2005083490 A1 WO 2005083490A1 JP 2005003163 W JP2005003163 W JP 2005003163W WO 2005083490 A1 WO2005083490 A1 WO 2005083490A1
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- sample
- objective lens
- lens
- sil
- correction
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B21/00—Microscopes
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B21/00—Microscopes
- G02B21/0004—Microscopes specially adapted for specific applications
- G02B21/0016—Technical microscopes, e.g. for inspection or measuring in industrial production processes
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B21/00—Microscopes
- G02B21/33—Immersion oils, or microscope systems or objectives for use with immersion fluids
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S359/00—Optical: systems and elements
- Y10S359/90—Methods
Definitions
- the present invention relates to a microscope used for observing a sample such as a semiconductor device on a predetermined observation surface through the sample, and to a sample observation method.
- Conventional semiconductor inspection devices include an emission microscope (Reference 1: Japanese Patent Application Laid-Open No. 7-190946), an OBIRCH device (Document 2: Japanese Patent Application Laid-Open No. 6-300824), and a time-resolved emission microscope ( Literature 3: JP-A-10-150086) is known.
- observation using such a microscope observation using infrared light or the like is performed because silicon (Si) used as a substrate material of a semiconductor device transmits near-infrared light.
- the visible light or the An inspection device using infrared light narrows down the area where an abnormal part exists to a certain extent.
- an observation device such as an electron microscope with higher resolution, the A method of detecting an abnormal point is used.
- Patent document 1 JP-A-7-190946
- Patent Document 2 JP-A-6-300824
- Patent document 3 Japanese Patent Application Laid-Open No. 10-15086
- SIL Solid Immersion Lens
- SIL Solid Immersion Lens
- Weierstrass sphere a small lens element having a size of about lmm. If this SIL is placed in close contact with the surface of the observation object, both the numerical aperture NA and the magnification can be increased, and observation with high spatial resolution is possible.
- NA numerical aperture
- magnification can be increased, and observation with high spatial resolution is possible.
- inspection using SIL has not been put into practical use in terms of handling and observation control. This is the same when observing samples other than semiconductor devices.
- the present invention has been made to solve the above problems, and has been developed to provide a microscope and a sample observation method capable of easily observing a sample necessary for microstructure analysis of a semiconductor device.
- the purpose is to provide.
- a microscope according to the present invention is a microscope for observing a sample on a predetermined observation surface, and (1) an optical system including an objective lens and guiding an image of the sample; 2) objective lens driving means for driving the objective lens to perform focusing and aberration correction on the sample; and (3) a solid immersion lens provided at a position including the optical axis to the sample lens and the objective lens.
- control means for controlling the objective lens driving means, and (5) the control means includes a refractive index n, a thickness t, a refractive index n, a thickness d, and a radius of curvature of the solid immersion lens of the sample.
- the solid immersion lens mode that performs focusing and aberration correction with the It is characterized by having.
- the sample observation method is a sample observation method for observing a sample on a predetermined observation surface via an optical system including an objective lens, and (a) an optical axis from the sample to the objective lens.
- a normal image observation step (first image observation step) in which a solid immersion lens is placed at a standby position outside the sample and a normal image of the sample is observed, and (b) an insertion position including the optical axis from the sample to the objective lens.
- the sample and the solid immersion lens with a solid immersion lens are used.
- the specimen is observed using a control mode (solid immersion lens mode) in which observation is performed under observation conditions that take optical parameters into consideration.
- sample observation there is an example in which a semiconductor device is used as a sample and the semiconductor device is observed from the back surface through a substrate.
- the microscope is used as a semiconductor inspection device, and inspection such as microstructure analysis of a semiconductor device can be easily performed.
- an image acquisition means for acquiring the image of the sample may be provided for the optical system for guiding the image of the sample.
- the microscope includes a solid immersion lens driving unit that drives the solid immersion lens to move between an insertion position including the optical axis from the sample to the objective lens and a standby position off the optical axis. It is good to prepare.
- a first objective lens for observing a normal image of the sample and a second objective lens for observing an enlarged image of the sample together with the solid immersion lens are used as objective lenses. It is acceptable to use the configuration that has. Thus, there is no solid immersion lens When a lens is used, a reporter for switching the objective lens is used as the solid immersion lens driving means.
- control means controls the refractive index n of the sample and the thickness t of the sample up to the observation surface.
- the solid immersion lens mode described above it is preferable to have two control modes: a normal mode for performing focusing under the correction conditions set based on 0 /!
- a solid immersion lens is arranged at a standby position off the optical axis to the sample lens and the objective lens, and based on the refractive index n of the sample and the thickness t of the sample up to the observation surface. Focus on set compensation conditions
- the first mode in which the observation is performed under the observation conditions in consideration of the optical parameters of the sample without the solid immersion lens, and the sample and the solid immersion lens with the solid immersion lens are used.
- the sample is observed by switching to the second mode (solid immersion lens mode) in which observation is performed according to observation conditions that take into account optical parameters.
- the microscope preferably has an objective lens driving unit having a focus adjusting unit that performs focusing by changing the distance between the sample and the objective lens.
- the microscope in the sample observation method, in the correction step, it is preferable to perform focusing by changing the distance between the sample and the objective lens.
- the microscope has an objective lens having a first lens group and a second lens group arranged along the optical axis, and the objective lens driving means includes a first lens group and a second lens group. It is preferable to have an aberration correcting unit that corrects aberration by changing the distance between the lens group and the second lens group. Similarly, in the sample observation method, in the correction step, it is preferable to perform the aberration correction by changing the distance between the first lens group and the second lens group arranged along the optical axis of the objective lens.
- the microscope preferably has a control unit having a focusing table and an aberration correction table corresponding to correction conditions in the solid immersion lens mode. That's right.
- the correction step it is preferable to use a focusing table and an aberration correction table corresponding to the correction conditions.
- the microscope controls the focusing table (the first correction condition) corresponding to the correction condition (first correction condition) in the normal mode (first mode).
- the control unit preferably further includes an aberration correction table (first aberration correction table) corresponding to the correction conditions in the normal mode.
- the sample observation method uses a focusing table (first focusing table) corresponding to the correction condition (first correction condition) in the normal correction step (first correction step).
- first focusing table corresponding to the correction condition (first correction condition) in the normal correction step (first correction step).
- second correction step it is preferable to use a focusing table (second focusing table) and an aberration correction table (second aberration correction table) corresponding to the correction condition (second correction condition).
- first aberration correction table corresponding to the correction condition in the normal correction step.
- the solid immersion lens driving means includes: a first arm member to which a solid immersion lens holder supporting the solid immersion lens is connected; and a first arm member in a horizontal plane substantially parallel to the sample.
- the first arm member rotation source to be rotated, the second arm member holding the first arm member rotation source, and a non-coaxial position with the rotation axis of the first arm member rotation source as a rotation axis.
- the solid immersion lens moving device includes a second arm member rotation source for rotating the second arm member in a horizontal plane.
- a solid immersion lens By using such a solid immersion lens moving device, a solid immersion lens can be suitably moved between an insertion position and a standby position with respect to a sample such as a semiconductor device and an objective lens.
- the solid immersion lens moving device further includes a vertical movement source for moving the second arm member rotation source in a vertical direction perpendicular to the horizontal plane.
- a solid immersion lens mode in which a solid immersion lens is disposed at an insertion position including an optical axis to a sample camera and an objective lens and observation is performed in consideration of optical parameters of the sample and the solid immersion lens
- FIG. 1 is a block diagram schematically showing a configuration of an embodiment of a semiconductor inspection apparatus.
- FIG. 2 is a side sectional view showing a configuration of an objective lens in the inspection device shown in FIG. 1.
- FIG. 3 is a side view showing a method of observing a semiconductor device using SIL in the inspection apparatus shown in FIG. 1.
- FIG. 4 is a flowchart showing an example of a semiconductor inspection method using the inspection apparatus shown in FIG.
- FIG. 5 is a flowchart showing observation in a normal mode and observation in a SIL mode in the inspection method shown in FIG. 4.
- FIG. 6 is a schematic diagram showing (a) a default state, (b) a normal mode, and (c) a SIL mode in observation of a semiconductor device.
- FIG. 7 is a graph showing an example of a correlation between a refractive index of a substrate and a geometric aberration.
- FIG. 8 is a graph showing an example of a correlation between a substrate thickness and a focus movement amount.
- FIG. 9 is a graph showing an example of the correlation between the thickness of a substrate and the distance between lens groups in an objective lens.
- FIG. 10 is a graph showing an example of a correlation between a measurement depth and a focus movement amount.
- FIG. 11 is a graph showing an example of a correlation between a measurement depth and an interval between lens groups in an objective lens.
- FIG. 12 is a graph showing another example of the correlation between the measurement depth and the distance between the lens groups in the objective lens.
- FIG. 13 is a configuration diagram showing another embodiment of the semiconductor inspection device.
- FIG. 14 is a side view showing the configuration of the semiconductor inspection apparatus shown in FIG. 13.
- FIG. 15 is a perspective view of one embodiment of the SIL manipulator and the objective lens as viewed from above.
- FIG. 16 is a bottom view showing the SIL manipulator and the objective lens in a state where the SIL is located at a standby position.
- FIG. 17 is a bottom view showing the SIL manipulator and the objective lens in a state where the SIL is placed at the insertion position.
- FIG. 18 is a bottom view showing the SIL manipulator and the objective lens in a state where the SIL is located at the replacement position.
- FIG. 19 is a perspective view showing a configuration of a SIL holder.
- FIG. 20 is a longitudinal sectional view showing (a) a state of a standby position and (b) a state of an insertion position of the SIL holder.
- LSM unit Laser scan optical system unit
- Control unit 51 ... Observation control unit, 51a ... Camera control unit, 51b "'LSM control unit, 51 ... OBIRCH control unit, 52 ... Stage control unit, 53-SIL control unit, 54 ... ⁇ Object lens controller, C... Analyzer, 61 ⁇ Image analyzer, 62 ⁇ Instruction, 63 ⁇ Display device.
- FIG. 1 is a block diagram schematically showing a configuration of an embodiment of a semiconductor inspection device according to the present invention.
- This device uses a semiconductor device S on which a powerful circuit pattern such as a transistor or a wiring is formed on a device surface as a sample to be inspected (observation target), and sets the device surface as an observation surface, and sets the device surface as an observation surface.
- This is an inspection device that inspects the semiconductor device S by observing it through the backside of the substrate.
- the microscope and the sample observation method according to the present invention can be applied to the case where the sample is observed through a sample on a predetermined observation surface.
- a semiconductor inspection apparatus and an inspection method which are mainly applied examples will be described. Will be described.
- the semiconductor inspection apparatus includes an observation unit A for observing the semiconductor device S, a control unit B for controlling the operation of each unit of the observation unit A, and a process required for the inspection of the semiconductor device S.
- An analysis unit C for giving instructions and the like is provided.
- the semiconductor device S to be inspected by the inspection apparatus that is, the sample to be observed, is placed on the stage 18 provided in the observation section A, with the device surface serving as the observation surface and the back surface facing the stage 18. It is placed as the upper side.
- the observation unit A has an image acquisition unit 1 installed in a dark box (not shown), an optical system 2, and a solid immersion lens (SIL: Solid Immersion Lens) 3.
- the image acquisition unit 1 is a unit that includes, for example, a photodetector and an imaging device and acquires an image of the semiconductor device S. Further, an optical system 2 for guiding an image by light from the semiconductor device S to the image acquisition unit 1 is provided between the image acquisition unit 1 and the semiconductor device S mounted on the stage 18. .
- the optical system 2 is provided with an objective lens 20 at which light from the semiconductor device S enters at a predetermined position facing the semiconductor device S. Emitted from semiconductor device S The reflected light or the like enters the objective lens 20, and reaches the image acquisition unit 1 via the optical system 2 including the objective lens 20. Then, the image of the semiconductor device S used for the inspection is obtained in the image obtaining unit 1.
- the image acquisition unit 1 and the optical system 2 are integrally configured with their optical axes aligned.
- An XYZ stage 15 including an XY stage 15a and a Z stage 15b is provided for the image acquisition unit 1 and the optical system 2.
- the XY stage 15a is used for moving the image acquisition unit 1 and the optical system 2 in the XY plane (in the horizontal plane) to set the observation position (inspection position) with respect to the semiconductor device S.
- the Z stage 15b is used for moving the image acquisition unit 1 and the optical system 2 in the Z direction (vertical direction) to adjust the focus on the semiconductor device S.
- the Z stage 15b functions as a focus adjusting unit that changes the distance between the substrate of the semiconductor device S and the objective lens 20 of the optical system 2 to perform observation focusing.
- the lens group of the objective lens 20 is constituted by two lens groups of a first lens group 20a and a second lens group 20b. ing. These lens groups 20a and 20b are arranged above and below the optical axis of the objective lens 20, respectively.
- the objective lens 20 is configured so that the distance u between the lens groups 20a and 20b can be changed by rotating a correction ring 21 (see FIG. 1) provided on the outer peripheral portion.
- the driving of the correction ring 21 is controlled by a correction ring driving unit 40.
- the correction ring 21 and the correction ring drive unit 40 function as aberration correction means for correcting the observation aberration by changing the interval u between the lens groups 20a and 20b in the objective lens 20.
- the objective lens 20 is driven by the focus adjusting means including the Z stage 15b and the aberration correcting means including the correction ring 21 and the correction ring driving unit 40 to perform focusing on the semiconductor device S.
- Objective lens driving means for correcting aberrations is provided.
- FIG. 2 a specific structure and a driving mechanism of the objective lens 20 including the correction ring 21 are not shown.
- the focusing on the semiconductor device S may be performed by driving the stage 18 on which the semiconductor device S is mounted.
- an inspection unit 16 is provided for the semiconductor device S. ing.
- the inspection unit 16 controls the state of the semiconductor device S as necessary when inspecting the semiconductor device S.
- the method of controlling the state of the semiconductor device S by the inspection unit 16 differs depending on the specific inspection method applied to the semiconductor device S. For example, a voltage is applied to a predetermined portion of a circuit pattern formed on the semiconductor device S. A method of supplying the semiconductor device S or a method of irradiating the semiconductor device S with laser light serving as probe light is used.
- the observation section A is further provided with SIL3!
- the SIL 3 is a lens used to enlarge an image of the semiconductor device S.
- the SIL 3 is movably installed with respect to the image acquisition unit 1 and the optical system 2, and the semiconductor device S mounted on the stage 18.
- the SIL3 includes an optical axis from the semiconductor device S to the objective lens 20 and can be moved between an insertion position installed in close contact with the semiconductor device S and a standby position off the optical axis. Is configured.
- a solid immersion lens driving unit (SIL driving unit) 30 is provided for SIL3.
- the SIL drive unit 30 is a drive unit that drives the SIL 3 to move between the above-described insertion position and the standby position. Further, the SIL drive unit 30 adjusts the insertion position of the SIL 3 with respect to the objective lens 20 of the optical system 2 by slightly moving the position of the SIL 3. Note that FIG. 1 illustrates the SIL 3 in a state where the SIL 3 is arranged at an insertion position between the objective lens 20 and the semiconductor device S.
- a hemispherical lens whose spherical center is the focal point and the aperture ratio NA and the magnification are both n times, or a position shifted downward by RZn from the spherical center is the focal point and the aperture is the SIL.
- a lens having a super hemispherical shape in which both the ratio NA and the magnification are n 2 times is used (for example, see JP-A-2002-189000).
- FIG. 3 is a side view showing a method of observing a semiconductor device using the SIL in the inspection apparatus shown in FIG.
- the semiconductor device S is installed on the stage 18 with the device surface Sa on the lower side (the stage 18 side) and the rear surface Sb on the upper side (the objective lens 20 side).
- the SIL 3 is arranged at the insertion position such that the flat or convex lens surface is in close contact with the back surface Sb.
- SIL for example, a piano-convex lens and a bi-convex lens are known (for example, No. 5-157701 and US Pat. No. 6,559,086).
- the optical parameters of the semiconductor device S include the refractive index n and the thickness t of the substrate.
- the optical parameters of SIL3 include refractive index n, thickness d
- the optical path is indicated by a dotted line.
- L in the figure is the measurement depth of SIL3 in the optical path indicated by the dotted line from the solid immersion lens spherical surface, that is, the distance from the vertex of SIL3 of the focal position obtained from the lens surface shape of SIL3. (Hereinafter referred to as measurement depth).
- the lens shape (for example, the setting of the thickness d with respect to the radius of curvature R) is appropriately set as needed.
- the thickness t of the substrate (sample) is observed inside the sample.
- the thickness t of the sample up to the observation surface may be set as the thickness t.
- a control unit B and an analysis unit C are provided for an observation unit A that performs observation and the like for inspecting the semiconductor device S.
- the control section B has an observation control section 51, a stage control section 52, a SIL control section 53, and an objective lens control section 54.
- the observation control unit 51 controls the execution of the observation of the semiconductor device S performed in the observation unit A and the setting of the observation conditions by controlling the operations of the image acquisition unit 1 and the inspection unit 16.
- the stage control unit 52 controls the operation of the XY stage 15a to set the observation position of the semiconductor device S by the image acquisition unit 1 and the optical system 2 which is the inspection position in the present inspection apparatus, or to set the observation position. Control alignment. Further, the SIL control unit 53 controls the operation of the SIL drive unit 30 to control the movement of the SIL 3 between the insertion position and the standby position, the adjustment of the SIL 3 insertion position, and the like.
- the objective lens control unit 54 controls the operation of the Z stage 15b to It controls the focusing that changes the distance between the substrate of the device S and the objective lens 20. Further, the control unit 54 controls the aberration of the objective lens 20 to change the distance u between the lens groups 20a and 20b by controlling the operations of the correction ring driving unit 40 and the correction ring 21.
- the analysis unit C has an image analysis unit 61 and an instruction unit 62.
- the image analysis unit 61 performs necessary analysis processing and the like on the image acquired by the image acquisition unit 1.
- the instruction unit 62 refers to the input content from the operator, the analysis content by the image analysis unit 61, and the like, and gives necessary instructions to the control unit B.
- a display device 63 is connected to the analysis unit C. The images, data, etc. acquired or analyzed by the analyzing unit C are displayed on the display device 63 as necessary.
- the control unit B includes an objective lens driving unit including the Z stage 15b, the correction ring driving unit 40, and the correction ring 21, and a solid immersion lens driving unit including the SIL driving unit 30.
- the control means controls the observation conditions when observing the device surface Sa of the semiconductor device S by controlling the means and.
- the control unit B including the SIL control unit 53 and the objective lens control unit 54 usually has a configuration in which the SIL 3 is configured to be movable between the insertion position and the standby position. It has two control modes: a mode (first mode) and a solid immersion lens mode (SIL mode, second mode).
- the SIL control unit 53 places the SIL 3 at a standby position off the optical axis by the SIL drive unit 30.
- the objective lens controller 54 sets the Z stage 15b and the correction ring drive under the first correction condition set based on the refractive index n and the thickness t of the substrate of the semiconductor device S.
- the moving section 40 and the correction ring 21 perform focusing on the observation condition and aberration correction. Then, observation of the semiconductor device S from the back surface Sb is performed via the optical system 2 including the objective lens 20.
- the objective lens controller 54 has a first focusing table and a first aberration correction table corresponding to the first correction condition.
- the SIL control unit 53 places the SIL 3 at the insertion position including the optical axis by the SIL drive unit 30. Further, the objective lens control unit 54 is configured to set the refractive index n and the thickness t of the substrate of the semiconductor device S, the refractive index n of the SIL3, the thickness d, and the second radius set based on the radius of curvature R.
- the focusing and the aberration correction of the observation condition are performed by the Z stage 15b, the correction ring driving unit 40, and the correction ring 21. Then, the optical system 2 including the objective lens 20 and the SIL 3 Through this, the semiconductor device S is observed from the back surface Sb.
- the objective lens controller 54 is provided with a second focusing table and a second aberration correction table corresponding to the second correction condition.
- FIG. 4 is a flowchart showing an example of a semiconductor inspection method using the inspection device shown in FIG.
- FIG. 5 is a flowchart specifically showing an observation method by observation in the normal mode and observation in the SIL mode among the inspection methods shown in FIG.
- FIG. 6 is a schematic diagram showing (a) a default state, (b) a normal mode, and (c) a SIL mode in observation of a semiconductor device.
- the semiconductor device S is observed in the normal mode using the objective lens 20 (S200). Specifically, as shown in the flowchart of FIG. 5, the refractive index n of the substrate, and
- the movement amount ⁇ of the lens 20 and the distance u between the lens groups 20a and 20b are adjusted. As a result, as shown in FIG. 6B, focusing and aberration correction are performed so that the device surface Sa set on the observation surface of the semiconductor device S from the back surface Sb through the substrate is focused on (S201). , First correction step).
- observation for inspecting the semiconductor device S is performed (S202, first image observation step).
- a normal image of a circuit pattern provided on the device surface Sa of the semiconductor device S is observed by the image acquisition unit 1 through the optical system 2 including the objective lens 20.
- the stage control unit 52 drives and controls the XY stage 15a to move the image acquisition unit 1 and the optical system 2 in the XY plane. Then, a position to be observed of the semiconductor device S is found, set at the center of the visual field, and set at the inspection position (observation position).
- the SIL drive unit 30 is driven by the SIL control unit 53 to move the SIL 3 to the standby position force insertion position. Then, SIL3 is inserted into the field of view according to the inspection position while being in close contact with the back surface Sb of the semiconductor device S (S301). In this state, the refractive index n and thickness of the substrate
- the moving amount ⁇ of the objective lens 20 and the distance u between the lens groups 20a and 20b are adjusted.
- focusing and aberration correction are performed so that the device surface Sa of the semiconductor device S is focused through the SIL 3 and the substrate (S302, a second correction step). Fine adjustments are made to the observation conditions such as focus, aberration, and the position of SIL3 as needed (S303).
- the observation of the semiconductor device S is performed (S304, second image observation step).
- the image acquisition unit 1 observes an enlarged image of the semiconductor device S via the optical system 2 including the objective lens 20 and the SIL 3, and inspects the circuit pattern at the inspection position.
- the SIL3 is removed from the visual field and moved to the standby position (S305).
- the SIL3 is arranged at the standby position and the Normal mode for observation under observation conditions that consider the optical parameters n and t
- Inspection is performed by switching to SIL mode, in which observation is performed under observation conditions that take into account data n, d, and R.
- SIL mode in which observation is performed under observation conditions that take into account data n, d, and R.
- focusing and aberration correction can be appropriately performed in each of the states without SIL3 and Z, and a normal image Z enlarged image of the semiconductor device S can be appropriately acquired. Therefore, inspection such as microstructure analysis of the semiconductor device S can be easily performed.
- the Z stage 15 b for adjusting the distance between the substrate of the semiconductor device S and the objective lens 20 is used as the focus adjusting means for the objective lens 20.
- the aberration correction means for the objective lens 20 a lens configuration including lens groups 20a and 20b is applied, and a correction ring 21 for adjusting the distance between the lens groups and a correction ring driving unit 40 are used. With such a configuration, the focus and aberration when observing the semiconductor device S can be suitably adjusted. Further, a configuration other than these may be used. For example, for focusing on the semiconductor device S, the stage 18 on which the semiconductor device S is mounted may be driven in the Z-axis direction as described above.
- the specific method of focusing and aberration correction is performed using a focusing table and an aberration correction table prepared in the control unit B corresponding to each correction condition. .
- a method other than the focusing table and the aberration correction table may be used.
- a configuration may be used in which a calculation formula necessary for performing focusing and aberration correction is prepared, and the focusing and aberration correction conditions are calculated using the calculation formula.
- the focusing table is created based on the driving distance (focus movement amount) ⁇ ⁇ of the objective lens 20 in the Z direction by the Z stage 15 b. It is preferable to do. Further, it is preferable that the aberration correction table is created based on the distance u between the lens groups 20a and 20b in the objective lens 20, or the rotation amount of the correction ring 21 corresponding to the distance u.
- correction tables a necessary number of tables are prepared in advance for combinations of assumed substrate and SIL optical parameters, and the tables are input.
- the table to be used may be selected according to the parameters.
- a correction table may be created when parameters are input.
- SIL optical parameters besides inputting individual parameter values, a configuration that prepares a set of parameters corresponding to the SIL model number or an IC chip that stores parameter values It is also possible to use a configuration in which a storage medium such as is provided in the SIL and data is read out during use.
- the following are examples of the main materials used for the semiconductor substrate and the SIL and the refractive index n thereof.
- GaP 3.1
- the target device is not limited to a device using a semiconductor substrate, but may be an integrated circuit having a substrate made of glass, plastic, or the like, such as a polysilicon thin film transistor.
- a liquid crystal device is manufactured on a glass substrate, and an organic EL device or the like is manufactured on a plastic substrate.
- NA is the numerical aperture of the objective lens 20.
- FIG. 7 is a graph showing an example of the correlation between the refractive index of the substrate and the geometric aberration.
- the horizontal axis represents the refractive index n of the substrate (sample) to be observed
- the vertical axis represents the (geometric
- NA 0.76.
- a focusing table and an aberration correction table are created based on the optical characteristics such as the geometrical aberration I thus obtained.
- FIG. 8 is a graph showing an example of the correlation between the thickness of the substrate and the amount of focus movement for moving the objective lens.
- the horizontal axis indicates the substrate thickness t m
- the vertical axis indicates the thickness.
- the focus movement for focusing is performed.
- the quantity ⁇ is calculated in a proportional manner with respect to the thickness t or the geometrical aberration I.
- FIG. 9 is a graph showing an example of the correlation between the thickness of the substrate and the distance between the lens groups in the objective lens.
- the horizontal axis represents the substrate thickness t m
- the vertical axis represents the objective lens 2.
- the distance u (mm) between the lens groups 20a and 20b set at 0 is shown.
- Graph B1 shows the correlation when Si is used
- B2 shows GaP
- B3 shows the correlation when glass is used as the substrate material.
- the distance u between the lens groups for aberration correction is different from the thickness t or the geometrical aberration I.
- the geometrical aberration I was the geometrical aberration II generated on the lens sphere of SIL3 and the SIL3Z
- L is the measured depth of SIL3 shown in FIG.
- a focusing table and an aberration correction table are created based on the optical characteristics such as the geometrical aberrations II and 12 thus obtained.
- FIG. 10 is a graph showing an example of the correlation between the measurement depth and the focus movement amount.
- the horizontal axis indicates the measurement depth L ( ⁇ m), and the vertical axis indicates the focus movement amount ⁇ Z (mm).
- FIG. 11 is a graph showing an example of the correlation between the measurement depth and the distance between the lens groups in the objective lens.
- the horizontal axis indicates the measurement depth L (m)
- the vertical axis indicates the distance u (mm) between the lens groups 20a and 20b.
- Graph CO is uncorrected
- the thickness t of the substrate is as described above.
- FIG. 12 is a graph showing another example of the correlation between the measurement depth and the distance between the lens groups in the objective lens.
- the distance u between the lens groups does not depend on the thickness d of the SIL3, but the thickness t of the substrate and the thickness d of the SIL3 are determined in any combination with the measurement depth L.
- FIG. 13 is a configuration diagram showing another embodiment of the semiconductor inspection device according to the present invention.
- FIG. 14 is a side view showing the configuration of the semiconductor inspection apparatus shown in FIG. In the present embodiment, the specific configuration of the semiconductor inspection apparatus shown in FIG. 1 is shown.
- the semiconductor inspection device includes an observation unit A, a control unit B, and an analysis unit C.
- the illustration of the analyzing unit C is omitted.
- the semiconductor device S to be inspected is mounted on a stage 18 provided in the observation section A. Further, in the present embodiment, a test fixture 19 for applying an electric signal or the like necessary for inspection to the semiconductor device S is provided.
- the semiconductor device S is arranged so that its back surface faces the objective lens 20.
- the observation unit A includes a high-sensitivity camera 10 installed in a sound box B (not shown) and a laser scanner. It has a Yang optical system (LSM: Laser Scanning Microscope) unit 12, optical systems 22, 24, XY Z stage 15, SIL 3, SIL drive unit 30, and correction ring drive unit 40.
- LSM Laser Scanning Microscope
- the camera 10 and the LSM unit 12 correspond to the image acquisition unit 1 in the configuration shown in FIG.
- the optical systems 22 and 24 correspond to the optical system 2.
- an objective lens 20 is provided on the semiconductor device S side of the optical systems 22 and 24, on the semiconductor device S side of the optical systems 22 and 24, a objective lens 20 is provided.
- a plurality of objective lenses 20 having different magnifications are provided so as to be switchable.
- the objective lens 20 is provided with the two lens groups 20a and 20b and the correction ring 21 shown in FIG. 2, and is configured to be able to correct the difference by the correction ring drive unit 40.
- the test fixture 19 corresponds to the inspection unit 16.
- the LSM unit 12 has a function as an inspection unit 16 in addition to a function as the image acquisition unit 1.
- the optical system 22 is a camera optical system that guides light from the semiconductor device S, which has entered through the objective lens 20, to the camera 10.
- the camera optical system 22 has an imaging lens 22a for forming an image enlarged at a predetermined magnification by the objective lens 20 on a light receiving surface inside the camera 10. Further, a beam splitter 24a of the optical system 24 is interposed between the objective lens 20 and the imaging lens 22a.
- a cooled CCD camera is used as the high sensitivity camera 10.
- the light of the semiconductor device S is guided to the camera 10 through the optical system including the objective lens 20 and the camera optical system 22. Then, an image such as a pattern image of the semiconductor device S is acquired by the camera 10.
- an emission image of the semiconductor device S can be acquired.
- the voltage is applied to the test fixture 19, and the voltage is guided to the force lens 10 via the optical force optical system generated from the semiconductor device S. Then, the camera 10 acquires an emission image of the semiconductor device S used as the abnormal observation image.
- the light emission from the semiconductor device S include a light emission caused by an abnormal portion based on a defect in the semiconductor device, and a transient light emission accompanying a switching operation of a transistor in the semiconductor device.
- the obtained image may be a heat-generated image based on a device defect.
- the LSM unit 12 includes a laser light introducing optical fiber 12 for irradiating infrared laser light. a, a collimator lens 12b that collimates the laser beam emitted from the optical fiber 12a, a beam splitter 12e that reflects the laser beam collimated by the lens 12b to convert the optical path, and a beam splitter 12e. And an XY scanner 12f that scans the laser beam reflected by the XY direction in the XY direction and emits it to the semiconductor device S side.
- the LSM unit 12 includes a condenser lens 12d that collects light that is incident via the semiconductor device S-side force XY scanner 12f and transmits through the beam splitter 12e, and a light collected by the condenser lens 12d. And a detection optical fiber 12c for detecting the
- the optical system 24 is an LSM unit optical system that guides light between the semiconductor device S and the objective lens 20 and the XY scanner 12f of the LSM unit 12.
- the LSM unit optical system 24 directs the LSM unit 12 with a beam splitter 24a that reflects a part of the light incident from the semiconductor device S via the objective lens 20, and an optical path of the light reflected by the beam splitter 24a. It has a mirror 24b for converting the light into an optical path, and a lens 24c for condensing the light reflected by the mirror 24b.
- the infrared laser light emitted from the laser light source (not shown) via the laser light introduction optical fiber 12a is supplied to the lens 12b, the beam splitter 12e, the XY scanner 12f, The light is radiated to the semiconductor device S through the optical system 24 and the objective lens 20, and enters the semiconductor device S.
- the reflected and scattered light from the semiconductor device S with respect to the incident light reflects the circuit pattern provided on the device surface of the semiconductor device S.
- the reflected light from the semiconductor device S reaches the beam splitter 12e through an optical path opposite to that of the incident light, and passes through the beam splitter 12e. Then, the light transmitted through the beam splitter 12e enters the detection optical fiber 12c via the lens 12d, and is detected by the photodetector connected to the detection optical fiber 12c.
- the intensity of light detected by the photodetector via the detection optical fiber 12c is an intensity that reflects the circuit pattern provided in the semiconductor device S, as described above. Therefore, the XY scanner 12f scans the semiconductor device S in the X-Y direction with the infrared laser beam, so that an image such as a circuit pattern of the semiconductor device S can be clearly captured. Wear.
- the observation section A is further provided with SIL3.
- the SIL 3 is positioned at the above-described insertion position and standby position with respect to the high-sensitivity camera 10, the LSM unit 12, the optical systems 22, 24, and the objective lens 20, and the semiconductor device S mounted on the stage 18. It is configured to be able to move between them.
- a SIL drive unit 30 is provided.
- the SIL drive unit 30 is an XYZ drive mechanism that includes an SIL moving device (SIL manipulator) to which a SIL holder that supports SIL3 is connected, and that moves SIL3 in the X, Y, and Z directions.
- a control unit B and an analysis unit C are provided for an observation unit A that performs observation for inspecting the semiconductor device S.
- the analysis unit C is not shown.
- the control unit B includes a camera control unit 5la, an LSM control unit 51b, an OBIRCH control unit 51c, a stage control unit 52, a SIL control unit 53, and an objective lens control unit 54.
- the stage control unit 52, the SIL control unit 53, and the objective lens control unit 54 are as described above with reference to FIG. 1, including the control of focusing and aberration correction in the two control modes.
- the camera control unit 51a, the LSM control unit 51b, and the OBIRCH control unit 51c correspond to the observation control unit 51 in the configuration shown in FIG.
- the camera control unit 5 la and the LSM control unit 5 lb control the operation of the high-sensitivity camera 10 and the LSM unit 12, respectively, to control the image acquisition of the semiconductor device S performed in the observation unit A.
- the OBIRCH control section 51c is for acquiring an OBIRCH (Optical Beam Induced Resistance Change) image used for detecting the semiconductor device S, and generates an OBIRCH image when the semiconductor device S is scanned by a laser beam. Extract the current change.
- OBIRCH Optical Beam Induced Resistance Change
- the analysis unit C has an image analysis unit 61 and an instruction unit 62, and is configured by, for example, a computer. Image information from the camera control unit 51a and the LSM control unit 51b is input via an image capture board provided in the computer of the analysis unit C.
- a semiconductor inspection method using the semiconductor inspection apparatus shown in Figs. 13 and 14 will be schematically described (see Figs. 4 and 5).
- the semiconductor device S is observed under the observation condition in which the focusing and the aberration correction are performed under the first correction condition (S200).
- the semiconductor device S is scanned by the LSM unit 12 to acquire a pattern image thereof.
- an abnormal observation image used for detecting an abnormal portion in the semiconductor device S is obtained.
- an OBIRCH image acquired by the OBIRCH control unit 51c, a light emission image acquired by the camera 10, or the like is used.
- the images are superimposed and displayed on the display device 63 as necessary. Further, an abnormal portion of the semiconductor device S is checked using the acquired image, the detected abnormal portion is set as an inspection position, and the XYZ stage 15 and the like are set so that the inspection position is located at the center of the visual field.
- the SIL mode in which the SIL3 is placed at the insertion position corresponding to the inspection position of the semiconductor device S allows the observation of the semiconductor device S under the observation condition in which the focus and the aberration are corrected under the second correction condition.
- an enlarged pattern image, an OBIRCH image, an emission image, and the like are acquired via the SIL 3 disposed on the semiconductor device S, the objective lens 20, and the like.
- superimposition of each image, display on the display device 63, and the like are performed.
- the stage and the like are appropriately moved according to the amount of chromatic aberration generated by SIL3, and the images are superimposed by adjusting the magnification by software.
- FIG. 15 is a perspective view of one embodiment of the SIL manipulator and the objective lens, which are SIL moving devices, as viewed from above.
- the SIL 3 is supported by the SIL holder 5.
- the SIL manipulator 30A (SIL drive unit 30) shown in FIG. 15 drives the SIL 3 supported by the SIL holder 5 in a three-dimensional direction to include the optical axis to the objective lens 20 and the semiconductor device S This is a SIL moving device that moves between an insertion position that is in close contact with the camera and a standby position off the optical axis. Further, the SIL manipulator 30A of this configuration example is configured to be movable to a replacement position for replacing the SIL 3 supported by the SIL holder 5.
- the SIL manipulator 30A includes a first arm member 71 on which the SIL holder 5 is mounted, and a first arm member rotation source for rotating the first arm member 71 in an XY plane (horizontal plane). 72, a second arm member 73 that holds the first arm member rotation source 72, and a second arm member rotation source 74 that rotates the second arm member 73 in the XY plane. I have. Further, the SIL manipulator 30A has a Z-direction movement source 75 for moving the second arm member rotation source 74 in the Z direction orthogonal to the XY plane, and the Z-direction movement source 75 is located at the base end and moves. The first arm member 71 is on the end side.
- the Z-direction movement source 75 is constituted by, for example, a Z-axis motor or the like that moves in the 3 ⁇ 4 direction with a movement axial force by a feed screw or the like, and is mounted on a microscope portion or the like on the inspection apparatus main body side via the support portion 76. .
- the support section 76 is detachably attached to the main body of the apparatus, for example, by screwing or the like, and is convenient for observation when the SIL manipulator 30A is detached, or when observation is performed with another SIL moving apparatus attached. Have been.
- a second arm member rotation source 74 is connected to a movement axis of the Z-direction movement source 75 via a support portion 77.
- the second arm member rotation source 74 is constituted by a motor or the like having a rotation shaft whose output shaft rotates in the forward and reverse directions (the rotation may be performed within a predetermined range). It is moved in the Z direction by driving.
- One end of the second arm member 73 is connected to the rotation axis of the second arm member rotation source 74. As shown in FIG. 15, the second arm member 73 is formed in a curved shape so that the second arm member 73 easily moves away from the visual field at the observation position of the semiconductor device S (the visual field of the objective lens 20). Te ru.
- a first arm member rotation source 72 is fixed to the other end of the second arm member 73.
- the first arm member rotation source 72 is configured by a motor or the like that is used as a rotation shaft that rotates the output shaft in the forward and reverse directions (the rotation may be performed within a predetermined range).
- the rotation axis of the first arm member rotation source 72 and the rotation axis of the second arm member rotation source 74 are located non-coaxially.
- the first arm member rotation source 72 moves together with the second arm member 73 around the rotation axis of the second arm member rotation source 74 in the XY plane. Is rotated.
- the other end of the first arm member 71 described above is connected to a rotation shaft of the first arm member rotation source 72.
- the first arm member 71 is rotated in the XY plane about the rotation axis of the first arm member rotation source 72 by driving the first arm member rotation source 72.
- FIGS. 16 to 18 are bottom views showing the SIL manipulator 30A and the objective lens 20, respectively.
- FIG. 16 shows a state where SIL3 is arranged at a standby position
- FIG. 17 shows a state where SIL3 is arranged at an insertion position
- FIG. 18 shows a state where the SIL 3 is arranged at the replacement position.
- the SIL manipulator 30 A shown in FIG. 15 is provided with an optical coupling material supply pipe 85 for supplying an optical contact liquid to SIL 3 and a gas supply pipe 95 for supplying a dry gas. These are used when the SIL 3 is arranged at the insertion position and optically adhered to the semiconductor device S.
- FIG. 19 is a perspective view showing a configuration of a SIL holder in the SIL manipulator shown in FIG.
- FIG. 20 is a longitudinal sectional view showing (a) a state of the standby position and (b) a state of the insertion position of the SIL holder.
- the SIL holder 5 includes a holder 6 configured to be substantially cylindrical and supporting the SIL 3, and an arm 7 holding the holder 6. Since the SIL holder 5 may come into contact with the optical contact liquid, it may be made of a metal having high corrosion resistance, such as stainless steel or aluminum. , Polyethylene, polycarbonate and the like.
- the holder 6 includes a first holder 8 that holds the SIL 3, and a second holder 9 that supports the first holder 8.
- the first holder 8 and the second holder 9 are formed in a substantially cylindrical shape so as not to hinder the optical path to the semiconductor device S.
- the first holder 8 has an annular flange 8a protruding outward on an outer peripheral surface of an upper portion thereof, and has an inwardly directed annular flange 8b on the bottom surface thereof.
- the SIL 3 is fixed to and held by the first holder 8, for example, with an adhesive or the like, with the bottom surface of the SIL 3 protruding downward through an opening formed on the inner periphery of the annular flange 8b.
- the second holder 9 has an annular flange 9a directed inward on the bottom surface.
- annular flange 8a of the first holder 8 is placed on the annular flange 9a of the second holder 9 in a state where the lower part of the first holder 8 projects downward, and the first holder 8 and the SIL 3 are It is supported in the direction of its own weight at 9.
- the outer diameter of the lower part of the first holder 8 is A
- the outer diameter of the annular flange 8a of the first holder 8 is B
- the inner diameter of the opening 9b of the second holder 9 is C
- the second holder 9 is provided with a cap 11 for preventing the SIL 3 from being detached, for example, by fitting or screwing into the upper opening 9c.
- the cap 11 is formed in a substantially cylindrical shape similarly to the first honoreda 8 and the second holder 9, and when the inner diameter of the cap 11 is D, the relation of D ⁇ B is set. Therefore, the cap 11 prevents the first holder 8 holding the SIL 3 from coming off through the opening 9c at the upper part of the second holder 9 without obstructing the optical path to the semiconductor device S, thereby preventing the loss of the SIL. Have been.
- the arm 7 is formed by bending a round bar into a substantially L-shape and extends outward from the second holder 9, one end of which is directed upward and the other end of which is the second holder 9. It is fixed to the side. At one end of the arm 7, a detent part 7 a having a part of the side surface of the noive as a flat surface is fixed as a detent for the arm part 7 and the holder 6 by, for example, fitting. Although the arm 7 has a substantially L-shape and one end thereof extends upward, the arm 7 may extend in the XY plane. As shown in FIG. 15, the arm 7 constituting the SIL holder 5 is detachably connected to one end of the first arm member 71 of the SIL manipulator 30A.
- the arm members 71 and 73 are folded, and the SIL 3 and the arm members 71 and 73 are connected to the objective lens 20. Out of sight.
- the first holder 8 holding the SIL3 has its annular flange 8a placed on the annular flange 9a of the second holder 9, and the first holder 8 and the SIL3 It is supported by the second holder 9 in the direction of its own weight!
- the arm members 71 and 73 are rotated so that the SIL 3 at the standby position is connected to the semiconductor device S as shown in FIG. Move to a position including the optical axis between the objective lens 20. At this time, the second arm member 73 is curved. With this configuration, the second arm member 73 is easily separated from the visual field of the objective lens 20 without obstructing the visual field.
- the ZIL movement source 75 of the SIL manipulator 30A is driven to lower the SIL3, and when the SIL3 approaches the observation position, it is optically transmitted through the optical coupling material supply pipe 85.
- the SIL 3 is placed at the insertion position with respect to the semiconductor device S in this manner, as shown in FIG. 20B, the SIL 3 and the first holder 8 supported by the second holder 9 in the direction of its own weight are provided. Is lifted by the semiconductor device S. Further, in this state, fine adjustment is performed on the position of SIL3 and the like.
- a refractive index matching fluid such as an index matching oil, or an optical contact liquid containing an amphipathic molecule is preferably used.
- the SIL 3 and the first holder 8 are free from the second holder 9 while being lifted by the semiconductor device S, the SIL 3 and the first holder 8 are located at the observation position of the semiconductor device S. Only the weight of the first holder 8 acts. As a result, excessive pressure is not applied, and SIL3 is familiar and closely attached to the observation position. Further, by supplying a gas through the gas supply pipe 95 and drying the optical contact liquid, the SIL 3 can be quickly and securely adhered to the observation position of the semiconductor device S.
- the first arm member rotation source 72 of the SIL manipulator 30A is driven to rotate the first arm member 71, so that the standby position force of the SIL3 is changed as shown in FIG. Move to the position and extend the connection part outward from near the bottom of the second arm member 73, and replace the SIL holder 5 together with the arm part 7. This facilitates attachment and detachment of the arm 7 of the SIL holder 5 to and from the first arm member 71, and replaces the SIL holder 5 together with the arm 7, so that the lens can be handled without directly handling the minute SIL 3. Exchange is easy.
- the microscope and the sample observation method according to the present invention can be variously modified without being limited to the above-described embodiments and configuration examples.
- the specific configuration of the image acquisition unit 1, the optical system 2, the inspection unit 16, etc., and the specific inspection method for inspecting the semiconductor device S are described in FIGS. 14 shows an example of the configuration, and various other configurations and inspection methods can be used.
- the device When only observation is performed on various devices such as semiconductor devices, the device may be configured as a device observation device without the detection unit 16.
- the image acquisition unit 1 may not be provided if it is not necessary, such as when the operator directly observes the image.
- the SIL drive unit 30 that drives SIL3 various units other than the SIL manipulator 30A shown in FIG. 15 may be used.
- the use of the above-described optical coupling material for obtaining the optical adhesion between the SIL and the substrate is only an example.
- the evanescent coupling may be obtained by pressing the SIL toward the substrate. Good!
- the semiconductor inspection apparatus and the semiconductor inspection method using a semiconductor device as an observation target have been described.
- the present invention can be applied to a case where a device other than a semiconductor device is used as an observation target.
- examples of the sample include various devices such as the above-described semiconductor device and liquid crystal device, and a bio-related sample using a preparation.
- the parameters corresponding to the model numbers of the SILs may be used. It is also possible to use a configuration in which a set of data is prepared or a configuration in which a storage medium such as an IC chip in which parameter values are stored is provided in the SIL and data is read out during use.
- the input of the SIL optical parameters is performed by storing the SIL, the SIL holder, or the semiconductor device attached to the arm, a storage medium such as a magnetic device, the SIL model number, serial number, radius of curvature, thickness, refractive index, and the like. Can be used.
- a storage medium such as a magnetic device, the SIL model number, serial number, radius of curvature, thickness, refractive index, and the like.
- a storage medium such as a magnetic device, the SIL model number, serial number, radius of curvature, thickness, refractive index, and the like.
- a configuration can be used in which a mark is provided on the SIL holder so that the individual can be identified with the naked eye or an image.
- a method of identifying the SIL using such a mark there is a method of using the color and number of lines, the color and number of points, the color of the holder itself, the serial number, and the like.
- the ID of the SIL is determined based on the mark, the serial number is input, and the parameters such as the radius of curvature, thickness, and refractive index registered in advance are read.
- the data of these parameters corresponding to the serial number is supplied by a flexible disk, etc., and there is a method of reading it into the software as soon as possible.
- a force for driving the SIL by the solid immersion lens driving unit may be configured such that such a driving unit is not provided if unnecessary.
- the control means for controlling the objective lens driving means includes the refractive index n, thickness t, and solid immersion of the sample.
- a SIL mode as a control mode for performing focusing and aberration correction under correction conditions set based on the refractive index n, thickness d, and radius of curvature R of the lens.
- aberration correction is performed in the normal mode using only the objective lens that performs focusing and aberration correction, respectively.
- only the focusing may be performed without using.
- the focusing table and the aberration correction table are used in the normal mode, only the focusing tape may be used.
- the optical system 2 including the objective lens 20 may employ various configurations other than the above configuration.
- the objective lens 20 a first objective lens for observing a normal image of the sample in the normal mode and a second objective lens for observing an enlarged image of the sample together with SIL3 in the SIL mode. May be provided with the objective lens
- the optical system is slightly separated from the sample, and the objective lens is switched to the objective lens with SIL, the optical system is gradually brought closer to the sample.
- the contact sensor turns ON when the tip of the SIL contacts the sample, and moves from the ON position to the actual focus position.
- ON position force The distance to the actual focus position is given in advance.
- the pattern image which is an enlarged image of the sample, and the abnormal observation image are observed.
- the optical system should be separated from the sample, the objective lens should be switched to the normal objective lens, and then the optical system should be returned to the focus position.
- the microscope and the sample observation method according to the present invention can be used as a microscope and a sample observation method capable of easily observing a sample necessary for microstructure analysis of a semiconductor device and the like.
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Abstract
Description
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EP05710713A EP1720051B1 (en) | 2004-02-27 | 2005-02-25 | Microscope and sample observing method |
JP2006510476A JP4584917B2 (ja) | 2004-02-27 | 2005-02-25 | 顕微鏡及び試料観察方法 |
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EP (1) | EP1720051B1 (ja) |
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Cited By (10)
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US7221502B2 (en) | 2003-03-20 | 2007-05-22 | Hamamatsu Photonics K.K. | Microscope and sample observation method |
US7110172B2 (en) | 2004-02-27 | 2006-09-19 | Hamamatsu Photonics K.K. | Microscope and sample observation method |
JP2010281960A (ja) * | 2009-06-03 | 2010-12-16 | Hamamatsu Photonics Kk | イマージョンレンズ支持装置 |
US8619377B2 (en) | 2009-06-03 | 2013-12-31 | Hamamatsu Photonics K.K. | Immersion lens holding device |
JP2013104667A (ja) * | 2011-11-10 | 2013-05-30 | Fujitsu Semiconductor Ltd | 半導体装置の検査装置及び検査方法 |
JP2015203700A (ja) * | 2014-04-10 | 2015-11-16 | ディーシージー システムズ、 インコーポライテッドDcg Systems Inc. | 光子放出のスペクトルマッピング |
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JP2019091061A (ja) * | 2019-01-16 | 2019-06-13 | オリンパス株式会社 | 光レセプタクル |
Also Published As
Publication number | Publication date |
---|---|
KR101184771B1 (ko) | 2012-09-20 |
EP1720051A4 (en) | 2010-03-17 |
JP4584917B2 (ja) | 2010-11-24 |
CN1906520A (zh) | 2007-01-31 |
CN100388043C (zh) | 2008-05-14 |
TWI363867B (en) | 2012-05-11 |
US20050190436A1 (en) | 2005-09-01 |
EP1720051B1 (en) | 2012-04-11 |
JPWO2005083490A1 (ja) | 2007-11-22 |
TW200538719A (en) | 2005-12-01 |
EP1720051A1 (en) | 2006-11-08 |
KR20060132583A (ko) | 2006-12-21 |
US7110172B2 (en) | 2006-09-19 |
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