WO2004084590A1 - 有機エレクトロルミネッセンス表示装置及びその製造方法 - Google Patents
有機エレクトロルミネッセンス表示装置及びその製造方法 Download PDFInfo
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- WO2004084590A1 WO2004084590A1 PCT/JP2003/003197 JP0303197W WO2004084590A1 WO 2004084590 A1 WO2004084590 A1 WO 2004084590A1 JP 0303197 W JP0303197 W JP 0303197W WO 2004084590 A1 WO2004084590 A1 WO 2004084590A1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
Definitions
- Patent application title Organic electorescence display device and method of manufacturing the same
- the present invention relates to an organic electroluminescent (EL) display device and a method for manufacturing the same, and more particularly to an organic EL display device in which a plurality of pixels are arranged and a partition wall is provided between the pixels, and a method for manufacturing the same.
- EL organic electroluminescent
- the organic EL device has a structure in which a plurality of organic compound layers having a carrier transporting property and a light emitting property are stacked and sandwiched between a pair of electrodes.
- a diode structure it is preferable to make the thickness of the organic compound layer uniform.
- the film thickness is non-uniform, the current flowing through the organic compound layer in the thickness direction becomes non-uniform in the plane.
- An organic compound is soluble in an organic solvent and is deteriorated by moisture, so that it is difficult to perform pattern processing by photolithography after forming an organic compound layer.
- the organic compound layer is divided into pixel units using a metal shadow mask having openings corresponding to the shape and arrangement of the pixels.
- a metal shadow mask having openings corresponding to the shape and arrangement of the pixels.
- FIG. 11 shows a cross-sectional view of the organic EL display device disclosed in Patent Document 1.
- a lower electrode 101 extending in the horizontal direction in the figure is formed.
- a plurality of insulating films 102 extending in a direction perpendicular to the plane of the drawing are formed on the surface of the substrate 1, and a partition wall 103 is formed thereon.
- Two of the lower electrodes 101 The area between the partition walls 103 defines a pixel area.
- the partition wall 103 is formed of a photosensitive resin, and has a reverse tapered cross-section whose width increases as the distance from the substrate 1 increases.
- An organic compound layer 104 and an upper electrode 105 are stacked on each of the pixel regions of the lower electrode 101. Note that an organic compound layer 104 a and a conductive layer 105 a deposited at the time of vapor deposition of the organic compound layer 104 and the upper electrode 105 are also formed on the partition wall 103.
- the position of the pixel in the horizontal direction in FIG. 11 is defined by the partition wall 103, and the position of the pixel in the direction perpendicular to the paper is defined by the lower electrode 101. For this reason, even if there is a misalignment of a shadow mask used when depositing an organic compound layer, the distance between pixels does not vary.
- the vicinity of the edge of the organic compound layer 104 is thinner than the center. If a diode is formed up to a portion having a small thickness, current concentrates in this portion.
- the insulating film 102 is disposed between the portion near the edge of the organic compound layer 104 and the lower electrode 101 to prevent current concentration on a thin portion. are doing.
- the partition walls 103 are formed of a photosensitive resin.
- the partition walls 103 formed of a photosensitive resin easily adsorb molecules in the atmosphere.
- the molecules adsorbed on the partition walls 103 are gradually released from the partition walls 103 and act on the organic compound layer 104 to accelerate the deterioration.
- An object of the present invention is to provide an organic EL display device in which an organic compound layer hardly deteriorates and a method for manufacturing the same.
- Patent Document 1
- a substrate having a plurality of pixel regions defined on a surface thereof, and a surface of the substrate, wherein the substrate is disposed on a region between the pixel regions, and is formed of an inorganic insulating material.
- a partition disposed on the lower portion, the lower portion including an upper portion made of an insulating material having different etching characteristics, wherein the upper portion projects from the side surface of the lower portion toward the pixel region.
- An organic EL display device is provided.
- the lower part of the partition is made of an inorganic insulating material, it is possible to easily release moisture and adsorbed gas by heating, and it is unlikely to be deformed.
- a step of forming a lower electrode composed of a plurality of conductive films extending in a row direction on a substrate, and an inorganic insulating material on the substrate so as to cover the lower electrode Forming a first film made of an insulating material different from the first film on the first film; and forming the second film on the first film.
- Organic luminescent material under the conditions A step of forming an organic layer by stacking, and a condition in which the organic layer is not sneak into a region in the shade of the overhanging portion, or a sneak amount is larger than a sneak amount when the organic layer is formed. Forming an upper electrode by depositing a conductive material under reduced conditions, thereby providing a method of manufacturing an organic EL display device.
- the lower part of the partition is constituted by the first film made of an inorganic insulating material. For this reason, it is possible to prevent the release of moisture and adsorbed gas from the lower part of the partition. Since the upper electrode does not go behind the overhang, the formation of the upper electrode near the edge of the organic layer can be prevented. Thus, the region where the upper electrode is formed can be limited to a region having a substantially uniform thickness of the organic layer.
- the second film is organic
- heat treatment is performed after patterning the second film. It is preferred to do so.
- FIG. 1 is a schematic plan view of the organic EL display device according to the first embodiment.
- FIGS. 2A and 2B are cross-sectional views of a substrate for explaining a method for manufacturing an organic EL display device according to the first embodiment.
- FIGS. 2C and 3A are cross-sectional views of the organic EL display device according to the first embodiment.
- FIG. 3B is a cross-sectional view of an organic EL display device according to a modification of the first embodiment.
- FIGS. 4A to 4G are schematic views showing a vapor deposition process from the hole transport layer to the upper electrode of the organic EL display device according to the first embodiment.
- FIG. 5 is a schematic perspective view for explaining a step of depositing an upper electrode.
- 6A and 6B are cross-sectional views of a substrate for explaining a method for manufacturing an organic EL display device according to a second embodiment.
- FIG. 6C is a cross-sectional view of the organic EL display device according to the second embodiment.
- FIG. 7 is a schematic plan view of an organic EL display device according to the third embodiment.
- 8A and 8B are cross-sectional views of an organic EL display device according to the third embodiment.
- 9A and 9B are cross-sectional views of an organic EL display device according to a modification of the third embodiment.
- FIG. 10 is a sectional view of an organic EL display device according to the fourth embodiment.
- FIG. 11 is a cross-sectional view of a conventional organic EL display device.
- FIG. 1 shows a schematic plan view of an organic EL display device according to a first embodiment of the present invention.
- a plurality of lower electrodes 10 extending in the horizontal direction (row direction) of FIG. 1 are arranged on a glass substrate.
- the lower electrode 10 is formed of indium oxide (ITO), its width W1 is 100 m, and the distance W2 between two adjacent lower electrodes 10 is 20 m. is there.
- ITO indium oxide
- a plurality of partitions 20 extending in the vertical direction (column direction) of FIG. 1 are arranged on the glass substrate and the lower electrode 10.
- the width W3 of the partition wall 20 is 40 m, and the interval W4 between two adjacent partition walls 20 is 320; m.
- the region between the partition walls 20 becomes one pixel region 5.
- FIGS. 2A to 2C correspond to the cross section taken along the dashed line A2-A2 in FIG. 1
- FIG. 3A corresponds to the cross section taken along the dashed line A3-A3 in FIG.
- a lower electrode 10 made of ITO is formed on a glass substrate 1.
- the lower electrode 10 is formed by depositing an ITO film having a thickness of 15 nm by sputtering and patterning the ITO film by isotropic etching.
- a nitride silicon film 11 A having a thickness of 400 nm is deposited on the glass substrate 1 so as to cover the lower electrode 10 by plasma-enhanced chemical vapor deposition (PEC VD).
- a positive resist is applied to the surface of the silicon nitride film 11A to form a resist film, and exposure and development are performed to form a pattern corresponding to the partition wall 20 shown in FIG. 1.
- a patterned resist film Is heat-treated at a temperature equal to or higher than the glass transition temperature to form the upper partition wall 12.
- the cross-sectional shape of the resist pattern has a forward tapered shape in which the bottom surface is wider than the upper surface.
- the resist pattern By heat treating the resist pattern at a temperature higher than the glass transition temperature of the resist material, it removes solvents and moisture from the resist pattern, densifies the film, suppresses atmospheric gas occlusion, and stabilizes its shape. Can be enhanced. In addition, the performance as an etching mask can be improved.
- the barrel type Purazumaetchiya while introducing a mixed gas of CF 4 and ⁇ 2 as Etsuchingugasu (oxygen concentration 5%), a nitride silicon film 1 1 A isotropically barrier ribs 1 2 as an etching mask etch I do.
- the lower electrode 10 is exposed in the region where the upper partition wall 12 is not disposed, and the lower partition wall 11 made of silicon nitride remains below the partition wall 12.
- the lower partition wall 11 and the upper partition wall 12 constitute the partition wall 20. Since the silicon nitride film 11A is isotropically etched, the etching proceeds in the lateral direction. For this reason, the cross section of the partition wall 20 has a shape in which the upper partition wall 12 projects from the side surface of the lower partition wall 11 toward the pixel region.
- an organic compound layer is deposited on the substrate by shadow mask evaporation. The method of depositing the organic compound layer will be described with reference to FIGS.
- an organic hole transport material is deposited using a shadow mask 30 having openings formed over the entire display area.
- the hole transport layer 14 is formed on the lower electrode 10.
- the hole transport layer 14 is formed on the pixel region 5 of the lower electrode 10. Since the hole transporting material also goes around the area behind the overhanging portion of the partition wall upper portion 12, the hole transporting layer 14 is deposited below the overhanging portion.
- an organic light emitting material for red is vapor-deposited on the red pixel region.
- the shadow mask 31 is shifted by one pixel, and an organic light emitting material for green is deposited on the green pixel region.
- the shadow mask 31 is shifted by one pixel-.
- An organic light emitting material for blue is deposited on the pixel region for blue.
- an organic light emitting layer 15R for red, an organic light emitting layer 15G for green, and an organic light emitting layer 15B for blue are formed on a predetermined pixel region.
- the total thickness of the hole transport layer 14 and the organic light emitting layer 15 is 100 nm.
- the hole transporting material and the organic luminescent material are also deposited on the surface of the upper partition wall 12 to form the organic compound layers 14a and 15a.
- the A 1 Li alloy is formed on the organic light emitting layers 15 R, 15 G, and 15 G. Is deposited to form an upper electrode 16.
- the thickness of the upper electrode 16 is 120 nm.
- FIG. 5 shows a schematic perspective view of a vapor deposition apparatus for forming the upper electrode 16.
- the raw material 36 for the upper electrode is loaded in the crucible 35.
- a collimator 37 is arranged between the substrate 1 and the crucible 35.
- the collimator 37 is a perforated plate member in which a plate having a certain thickness is provided with a large number of through holes 38 having a central axis parallel to the thickness direction.
- the cross section of the through hole 38 may be circular, hexagonal, or any other shape.
- the raw material that evaporates from the crucible 35 and flies in a direction greatly inclined from the normal line of the substrate 1 cannot pass through the through hole 38 and does not reach the substrate 1.
- the raw material flying almost parallel to the normal direction of the substrate 1 passes through the through hole 38 and reaches the substrate 1. For this reason, as shown in FIG. 2C, the upper electrode material hardly goes into the shadow of the overhang of the upper part 12 of the partition wall.
- the wraparound amount of the upper electrode material is smaller than the wraparound amount of the hole transport material and the organic light emitting material. For this reason, the upper electrode 16 is not formed near the edge of the organic light emitting layer 15R. Note that the upper electrode material is also deposited on the partition wall 20 to form the conductive layer 16a.
- the thickness of the collimator 37 is 60 mm and the diameter of the through hole 38 is 5 mm, the raw material flying in a direction inclined by 4.8 ° or more from the normal of the substrate is Does not reach.
- the wraparound amount of the electrode material can be made larger than the wraparound amount of the organic light emitting material.
- the amount of wraparound for all pixels can be increased. It is preferable to arrange a plurality of crucibles 35 shown in FIG. 5 along an imaginary plane parallel to the substrate 1 in order to make the vapor deposition conditions equal for all the pixels in the substrate 1. Further, by rotating the substrate 1 during the vapor deposition, the uniformity of the film thickness can be further improved.
- the substrate 1 is placed in a vacuum vessel, and a sealing member 40 is put on the surface on which the organic light emitting layer is formed.
- the substrate 1 and the sealing member 40 are adhered with an ultraviolet curable adhesive.
- the ultraviolet rays are shielded by the light shielding plate 42 so that the organic hole transport layer and the organic light emitting layer are not irradiated with the ultraviolet rays.
- an organic EL display device is obtained in which light generated in the organic light emitting layer is transmitted through the substrate 1 and emitted to the outside.
- the upper electrode 16 is not formed on a thin region near the edge of the organic hole transport layer 14 or the organic light emitting layer 15R. For this reason, a current can be made to flow almost uniformly through the organic light emitting layer 15R.
- FIG. 3B shows a cross-sectional view of an organic EL display device according to a modification of the first embodiment.
- RGB pixels are arranged in the sectional direction of FIG. 3A (the column direction of FIG. 1).
- RGB pixels are arranged in the row direction in FIG. Therefore, only one color pixel appears in the cross section of FIG. 3B. Therefore, one organic light emitting layer 15 extends in the lateral direction of FIG. 3B.
- FIG. 1 The plan view of the organic EL display device according to the second embodiment is the same as the plan view of the organic EL display device of the first embodiment shown in FIG. 1, and FIGS. Dashed line A 2—corresponds to the cross section at A 2.
- a lower electrode 10 is formed on a glass substrate 1.
- the lower electrode 10 has the same structure as the lower electrode 10 of the first embodiment shown in FIGS. 1 and 2A.
- a 400 nm thick silicon nitride film 5OA and a 300 nm thick silicon oxide film 51A are sequentially deposited on the substrate 1 by PECVD so as to cover the lower electrode 10.
- a resist pattern 52 is formed on the silicon oxide film 51A.
- the resist pattern 52 is arranged at a position corresponding to the partition wall 20 shown in FIG. After the formation of the resist pattern 52, the baking is performed.
- a mixed gas of CHF 3 and H 2 (CHF 3 concentration 10%) is introduced into the parallel plate reactive ion etcher, and the silicon oxide film 51A is anisotropically etched using the resist pattern 52 as an etching mask.
- the upper partition wall 51 made of silicon oxide remains below the resist pattern 52. Then, a mixed gas of CF 4 and ⁇ 2 a barrel type plasma et Tsuchiya
- the lower electrode 10 is arranged. A part of the silicon nitride film 5 OA (the silicon nitride film 11 A in FIG. 3A) is left in the region where no silicon nitride film is present. After etching the silicon nitride film 5OA, the resist pattern 52 is removed.
- heat treatment is performed. This heat treatment is performed at a temperature at which moisture or the like adsorbed on the substrate surface can be removed.
- a hole transport layer 14, an organic light emitting layer 15 and an upper electrode 16 are formed on the pixel region. These layers are formed in the same manner as in the first embodiment.
- a layer 14a made of a hole transport material, a layer 15a made of an organic luminescent material, and a layer 16a made of an upper electrode material are also deposited on the partition wall 20.
- the partition wall 20 is formed of an inorganic material. Therefore, it is possible to prevent the organic EL display device from being deteriorated due to the desorption of the organic solvent and the adsorbed substance.
- the lower partition wall 50 is formed of silicon nitride, and the upper partition wall 51 is formed of silicon oxide. However, both may be formed of inorganic insulating materials having mutually different etching characteristics. Using the upper partition wall 51 as an etching mask, the lower layer can be etched to form the lower partition wall 50.
- the lower partition wall 50 and the upper partition wall 51 are formed of different inorganic insulating materials, but are formed of inorganic compounds having the same constituent elements and different composition ratios. May be.
- the lower partition wall 50 and the upper partition wall 51 may both be formed of silicon nitride, and the composition ratio of silicon and nitrogen may be changed between the lower partition wall 50 and the upper partition wall 51.
- S i: N of the lower partition wall 50 is set to 1: 1 and S i: N of the upper partition wall 51 is set to 1.2: 1.
- the etching rate increases as the N composition ratio increases. Therefore, the etching can be performed under the condition that the etching rate of the lower partition 50 is higher than that of the upper partition 51.
- the partition wall 20 can be formed by etching an inorganic compound layer whose composition ratio gradually changes in the height direction.
- the partition wall 20 is formed of silicon nitride and is separated from the substrate 1 Accordingly, the composition ratio of nitrogen may be reduced.
- the silicon nitride layer is etched with hydrofluoric acid, the etching speed of the portion close to the substrate is higher than the etching speed of the upper portion, so that a partition wall 20 having a gradually expanding cross-sectional shape is formed as the etching speed increases. be able to. Note that in this case, it is preferable to perform anisotropic etching first, and then perform isotropic etching.
- the composition ratio of the silicon nitride film can be controlled by controlling the partial pressure of the source gas, for example, the partial pressure of silane and ammonia.
- a silicon nitride film is deposited by PECVD under the conditions of a substrate temperature of 320 ° C, a gas pressure of 13.3 Pa (0.1 lTorr), a plasma generation frequency of 13.56 MHz, and a high frequency power of 0.1 WZ cm 2 .
- the partial pressure ratio between silane and ammonia is 1: 2
- the composition ratio S i: N of the formed silicon nitride is 1.2: 1
- the partial pressure ratio between silane and ammonia is 1: 3.
- the composition ratio S i: N of the formed silicon nitride becomes 1: 1.
- FIG. 7 shows a schematic plan view of an organic EL display device according to the third embodiment.
- a plurality of lower electrodes 10 extending in the row direction are arranged on the surface of the substrate.
- the partition walls 20 extend in the column direction.
- the partition walls are arranged in a grid.
- the portion of the partition extending in the row direction is arranged between two lower electrodes 10 adjacent to each other.
- An opening region 21 of the partition is arranged at a position overlapping with the lower electrode 10.
- the opening regions 21 are arranged in a matrix, each of which corresponds to one pixel region.
- An upper electrode 60 extending in the column direction is arranged corresponding to each column of the opening region 21.
- Each of the upper electrodes 60 has a width wider than the dimension of the opening region 21 in the row direction, and includes the opening region 21.
- FIG. 8A is a cross-sectional view taken along the dashed-dotted line A8-A8 in FIG.
- a lower electrode 10 is formed on a glass substrate 1.
- a partition wall 20 composed of a partition lower portion 11 and a partition upper portion 12 is formed.
- the cross-sectional structure of the bulkhead 20 is shown in FIG. 2B.
- the sectional structure is the same as that of the partition wall 20 of the first embodiment.
- the hole transport layer 4 and the organic light emitting layer 15 are formed on the lower electrode 10 in the opening area 21.
- a layer 14a made of a hole transport material and a layer 15a made of an organic luminescent material are also deposited on the partition wall 20.
- An upper electrode 60 is formed on the organic light emitting layer 15.
- the upper electrode 60 extends over the partition walls 20 on both sides thereof.
- FIG. 8B shows a cross-sectional view taken along dashed-dotted line B8-B8 in FIG. In FIG. 8B, RGB pixels are arranged in the horizontal direction.
- the upper electrode 60 extends in the lateral direction of FIG. 8B over the plurality of opening regions 21.
- a closed space is defined for each pixel by the substrate 1, the partition 20, and the upper electrode 60.
- the hole transport layer 14 and the organic light emitting layer 15 are arranged in this closed space.
- the steps from the step of forming the lower electrode 10 of the organic EL display device according to the third embodiment to the step of forming the organic light emitting layer 15 are the same as the manufacturing steps of the organic EL display device according to the first embodiment.
- the upper electrode 60 is deposited thicker than in the first embodiment, so that the upper electrode 60 is continuous from the surface of the organic light emitting layer 15 to above the partition wall 20.
- the deposition of the upper electrode 60 is performed using a shadow mask having an opening corresponding to a column of pixels.
- an organic film 15a made of an organic luminescent material may be exposed in a gap between the upper electrodes 60 above the partition wall 20.
- the exposed organic film 15a and the organic film 14a thereunder are deteriorated.
- the exposed organic film 15a may be exposed to an oxidizing atmosphere.
- the width in the row direction of the opening of the shadow mask applied when depositing the upper electrode 60 of FIG. 7 is set to the width of the opening of the shadow mask applied when depositing the organic films 14a and 15a.
- a cross-sectional view taken along the dashed-dotted line A8-A8 when the width is wider than the width in the row direction is shown.
- the organic films 14a and 15a are completely covered with the upper electrode 60 and are not exposed. Therefore, the step of altering the organic films 14a and 15a becomes unnecessary.
- the hole transport layer 14 and the organic light emitting layer 15 are arranged in a space isolated from the outside air. For this reason, it is possible to prevent deterioration of the organic compound due to intrusion of moisture or the like.
- FIGS. 9A and 9B are cross-sectional views of an organic EL display according to a modification of the third embodiment.
- FIGS. 9A and 9B correspond to the cross sections taken along dashed lines A8-A8 and B8-B8 in FIG. 7, respectively.
- RGB pixels are arranged in the row direction in FIG.
- the organic film 15a made of the organic light emitting material is separated above the partition wall 20.
- the organic film 15a is continuous above the partition wall 20.
- FIG. 10 is a sectional view of an organic EL display device according to the fourth embodiment.
- the organic EL display device according to the fourth embodiment has the same planar shape as that of the partition wall of the organic EL display device according to the third embodiment shown in FIG. FIG. 10 corresponds to a cross section taken along dashed-dotted line A8-A8 in FIG.
- the sectional structure of the partition wall 20 of the organic EL display device according to the fourth embodiment is the same as the sectional structure of the partition wall 20 of the organic EL display device according to the second embodiment shown in FIG. 6C.
- a hole transport layer 14 and an organic light emitting layer 15 are stacked on the pixel region.
- An organic film 14a made of a hole transport material and an organic film 15a made of an organic luminescent material are deposited on the partition wall 20.
- An upper electrode 65 is formed on the organic light emitting layer 15.
- the upper electrode 65 is formed thicker than the upper electrode 16 of the second embodiment shown in FIG. 6C, and continuously covers up to the partition wall 20. After the upper electrode 65 is formed, the substrate is irradiated with ultraviolet rays to alter the organic films 15a and 14a exposed in the gap between the upper electrodes 65.
- the hole transport layer 14 and the organic light emitting layer 15 are composed of the substrate 1, the partition wall 20, and the upper electrode 65. In the space defined by For this reason, intrusion of moisture from the outside can be prevented.
- the organic compound layer is composed of the two layers of the hole transport layer and the organic light emitting layer.
- another configuration may be adopted.
- it may have a three-layer structure of a hole injection layer, a hole transport layer, and an organic light emitting layer.
- An electron transport layer may be added between the organic light emitting layer and the upper electrode.
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Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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PCT/JP2003/003197 WO2004084590A1 (ja) | 2003-03-17 | 2003-03-17 | 有機エレクトロルミネッセンス表示装置及びその製造方法 |
EP03708658A EP1605732A4 (en) | 2003-03-17 | 2003-03-17 | ORGANIC ELECTROLUMINESCENCE DISPLAY AND METHOD OF MANUFACTURE |
JP2004569554A JP4206075B2 (ja) | 2003-03-17 | 2003-03-17 | 有機エレクトロルミネッセンス表示装置及びその製造方法 |
US11/125,104 US7095172B2 (en) | 2003-03-17 | 2005-05-10 | Organic electro luminescence display and its manufacture method |
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PCT/JP2003/003197 WO2004084590A1 (ja) | 2003-03-17 | 2003-03-17 | 有機エレクトロルミネッセンス表示装置及びその製造方法 |
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US11/125,104 Continuation US7095172B2 (en) | 2003-03-17 | 2005-05-10 | Organic electro luminescence display and its manufacture method |
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WO2004084590A1 true WO2004084590A1 (ja) | 2004-09-30 |
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EP (1) | EP1605732A4 (ja) |
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WO (1) | WO2004084590A1 (ja) |
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KR102525822B1 (ko) * | 2017-07-06 | 2023-04-26 | 삼성디스플레이 주식회사 | 표시 소자 및 그 제조 방법 |
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JP2006181419A (ja) * | 2004-12-27 | 2006-07-13 | Seiko Epson Corp | 色要素膜付き基板の製造方法、色要素膜付き基板、電気光学装置、および電子機器 |
JP2009545117A (ja) * | 2006-07-25 | 2009-12-17 | エルジー・ケム・リミテッド | 有機発光素子の製造方法およびこれによって製造された有機発光素子 |
JP2011526694A (ja) * | 2008-03-14 | 2011-10-13 | ケンブリッジ ディスプレイ テクノロジー リミテッド | 電子デバイスおよび溶液処理技術を用いてそれらを製造する方法 |
KR20220087414A (ko) * | 2014-10-22 | 2022-06-24 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치와, 이의 제조 방법 |
KR102456072B1 (ko) | 2014-10-22 | 2022-10-19 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치와, 이의 제조 방법 |
JP2017182912A (ja) * | 2016-03-28 | 2017-10-05 | パイオニア株式会社 | 発光装置 |
WO2019163009A1 (ja) * | 2018-02-21 | 2019-08-29 | 堺ディスプレイプロダクト株式会社 | 有機elデバイスおよびその製造方法 |
JPWO2019163009A1 (ja) * | 2018-02-21 | 2020-02-27 | 堺ディスプレイプロダクト株式会社 | 有機elデバイスおよびその製造方法 |
CN111788863A (zh) * | 2018-02-21 | 2020-10-16 | 堺显示器制品株式会社 | 有机el器件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1605732A1 (en) | 2005-12-14 |
US20050214577A1 (en) | 2005-09-29 |
JPWO2004084590A1 (ja) | 2006-06-29 |
US7095172B2 (en) | 2006-08-22 |
JP4206075B2 (ja) | 2009-01-07 |
EP1605732A4 (en) | 2008-04-09 |
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