WO2004066684A1 - 電界発光素子 - Google Patents
電界発光素子 Download PDFInfo
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- WO2004066684A1 WO2004066684A1 PCT/JP2003/000492 JP0300492W WO2004066684A1 WO 2004066684 A1 WO2004066684 A1 WO 2004066684A1 JP 0300492 W JP0300492 W JP 0300492W WO 2004066684 A1 WO2004066684 A1 WO 2004066684A1
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/66—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing germanium, tin or lead
- C09K11/664—Halogenides
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7715—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing cerium
- C09K11/7719—Halogenides
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7732—Halogenides
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
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- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/10—Non-macromolecular compounds
- C09K2211/1003—Carbocyclic compounds
- C09K2211/1007—Non-condensed systems
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- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/10—Non-macromolecular compounds
- C09K2211/1003—Carbocyclic compounds
- C09K2211/1014—Carbocyclic compounds bridged by heteroatoms, e.g. N, P, Si or B
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/10—Triplet emission
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/917—Electroluminescent
Definitions
- the present invention relates to an electroluminescent device.
- the present invention relates to an electroluminescent device that can drive (emit light) an inorganic compound at a DC voltage (low voltage).
- the present invention relates to an electroluminescent element which can change a luminescent color by dispersing an inorganic compound in an organic compound layer which is a light emitting layer.
- the present invention relates to an electroluminescent device in which the emission color is changed by changing an inorganic compound dispersed in an organic compound layer.
- Electroluminescent devices are used for display members such as thin-film panels and cylindrical panels, surface light-emitting devices such as large-area panels, and many other devices.
- display members such as thin-film panels and cylindrical panels
- surface light-emitting devices such as large-area panels
- many other devices In particular, recently, it has begun to be widely used for optoelectronic oscillation devices such as electronic devices for laser beams.
- Electroluminescent devices are classified into inorganic electroluminescent devices using an inorganic compound for a light emitting layer, and organic electroluminescent devices using an organic compound for a light emitting layer.
- An inorganic electroluminescent element is a method in which an inorganic compound is sandwiched between insulating layers and driven by applying an AC voltage.High-field accelerated high-speed electrons collide with each other and excite the emission center. It is. Inorganic electroluminescent elements have been put to practical use, for example, in green light emitting displays.
- Organic electroluminescent devices have a structure in which a thin film containing an organic compound is sandwiched between an anode and a cathode. Injects electrons and holes into this thin film and emits light by their recombination energy (also called charge injection type). Organic electroluminescent devices can emit light with high luminance at a low DC voltage of several volts to several tens of volts, and are expected to be applied to various light emitting devices and display devices. As described above, an inorganic electroluminescent element using an inorganic compound for the light emitting layer has been put to practical use in a green light emitting display or the like. However, in order to drive the inorganic electroluminescent device, an AC power supply and a high voltage were required, and the usable place and range were limited.
- an organic electroluminescent device using an organic compound for the light emitting layer can emit light with high luminance at a direct low voltage as described above.
- the deterioration characteristics (life) of the constituent materials are inferior to those of the inorganic electroluminescent device, and the material cannot be used for a long time.
- a host material and a guest material are required. It was necessary to suitably combine the two constituent materials of the material, for example, when changing the guest dye, it was necessary to change the host material at the same time. Therefore, for example, when a display is manufactured using the electroluminescent device, the required host material increases, and the manufacturing cost of the display increases.
- the present inventors first developed the inorganic compound used for the light emitting layer of the inorganic electroluminescent element in the same manner as the organic electroluminescent element in order to make use of the useful research results of the inorganic electroluminescent element accumulated conventionally.
- an object of the present invention is to provide an electroluminescent device that can drive (emit light) an inorganic compound at a DC voltage (low voltage).
- Means of the present invention taken to achieve the above object are as follows.
- An electroluminescent device that emits light by recombination of holes injected from an anode and electrons injected from a cathode
- One or more organic compound layers are provided between the electrodes, and the emission color is changed by dispersing the inorganic compound in at least one of the organic compound layers.
- the electroluminescent device characterized in that the inorganic compound is caused to emit light at a DC voltage.
- An electroluminescent device according to the first or second invention.
- the inorganic compound is a metal compound
- An electroluminescent device according to the first, second or third invention.
- the inorganic compound is a transition metal compound
- An electroluminescent device according to the first, second or third invention.
- the inorganic compound is a rare earth metal compound, An electroluminescent device according to the first, second or third invention.
- the inorganic compound is a metal halide compound
- An electroluminescent device according to the first, second or third invention.
- the inorganic compound is at least one compound selected from the group consisting of europium iodide, europium bromide, cerium iodide, cerium bromide, terbium iodide, and lead iodide,
- An electroluminescent device according to the first, second or third invention.
- the organic compound is 4,4-bis (carbazol-9-yl) -biphenyl
- the inorganic compound is at least one compound selected from the group consisting of cerium iodide, cerium bromide, terbium iodide, and lead iodide. Characterized by the following:
- An electroluminescent device according to the first, second or third invention.
- the inorganic compound is a combination of a halide of europium and a halide of an alkali metal, or a combination of a halide of europium and a halide of an alkaline earth metal,
- the electroluminescent element is formed, for example, by the following configuration.
- a substrate, an anode, a single layer or a plurality of organic layers having a hole transporting property, a light emitting layer in which an inorganic compound is dispersed in an organic compound, a single layer or a plurality of organic layers having an electron transporting property, and a cathode are sequentially laminated. And the like.
- hole block layer hole blocking layer
- electron injection layer an electron injection layer
- Examples of the substrate include glass, plastic, and a metal thin film.
- Examples of the anode (transparent electrode) include those obtained by forming indium tin oxide (ITO), titanium oxide, tin oxide, or the like into a thin film by a vacuum evaporation method, a sputtering method, or a sol-gel method.
- organic layer having a hole transporting property examples include polypinylcarbazole (PVK) and phenylenediamine derivatives (eg, N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -benzidine). , Triphenylamine derivatives, sorbazole derivatives, phenylstyrene derivatives and the like.
- Examples of the organic substance layer having an electron transporting property include an oxaziazole derivative, a triazole derivative, a phenanthroline derivative, and an aluminum quinolinol complex.
- the organic layer having a hole transporting property and the organic layer having an electron transporting property can be formed by a vacuum evaporation method, a spin coating method, or the like.
- cathode examples include lithium, aluminum, magnesium, and silver.
- the light-emitting layer in which an inorganic compound is dispersed in an organic compound can be formed by a vacuum evaporation method, a spin coating method, or the like.
- a vacuum deposition method is preferred from the viewpoint that a uniform film is easily obtained and a pinhole is not easily generated.
- co-evaporation also referred to as binary simultaneous evaporation
- the concentration of the inorganic compound can be set by the ratio of the deposition rates of the inorganic compound and the organic compound.
- both an organic compound and an inorganic compound are dissolved in a soluble solvent, and spin coating is performed to uniformly disperse the inorganic compound in the organic semiconductor and form a thin film.
- the concentration of the inorganic compound is
- the concentration of the inorganic compound is less than 0.1%, the energy transfer from the organic compound to the inorganic compound becomes incomplete, and there is a problem that the inorganic compound does not easily emit light. If the concentration of the inorganic compound exceeds 70 w, the inorganic compounds are too close to each other, and quenching of the concentration is likely to occur, and the luminous efficiency is likely to decrease.
- organic compound used for the light emitting layer a known material can be used.
- fulcazole derivatives triphenylamine derivatives, triazole derivatives (TAZ), phenylstyrene derivatives, fluorene derivatives, aluminum quinolinol complexes and their derivatives, and phenylenediamine derivatives, etc.
- TEZ triazole derivatives
- phenylstyrene derivatives fluorene derivatives
- aluminum quinolinol complexes and their derivatives and phenylenediamine derivatives, etc.
- the present invention is not limited to these.
- examples include, but are not limited to, polyvircarpazoles, polyfluorenes, polythiophenes, and polyphenylenevinylenes.
- a nonmetallic compound such as arsenic or a metal compound (including a transition metal compound or a rare earth metal compound) can be used.
- Metals include, for example, manganese, nickel, copper, gallium, silver, cadmium, indium, tin, antimony, gold, lead, bismuth, scandium, itdium, lanthanum, cerium, praseodymium, samarium, europium, gadolinium Palladium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, thallium include, but are not limited to.
- a metal halide compound is preferable because vapor deposition can be easily performed at a relatively low temperature.
- halide examples include fluoride, chloride, bromide, iodide, and the like.
- the inorganic compounds can be dispersed alone or in combination of two or more in the organic compound layer.
- the thickness of the organic compound layer is not particularly limited. However, it is preferably from 30 MI to 400 nm, and more preferably from 60 nm to 200 mn. If the thickness of the organic compound layer is less than 30 nm, there is a high possibility that the electrodes will be short-circuited. If the thickness exceeds 400 nm, the resistance value will increase and the current will not easily flow.
- hole block layer examples include, but are not limited to, bathocuproine, a triazole derivative (TAZ), and an oxadiazole derivative.
- Examples of the electron injection layer include, but are not limited to, lithium fluoride and magnesium fluoride.
- the inorganic compound examples include a compound obtained by combining a palladium halide and a halide of an alkali metal, or a widow obtained by combining a europium halide and an octoate genide of an alkaline earth metal.
- examples of the alkali metal include lithium, sodium, potassium, rubidium, and cesium.
- examples of the alkaline earth metal include magnesium, calcium, strontium, barium and the like.
- the alkali metal halide or alkaline earth metal halide can be dispersed alone or in combination of two or more in the organic compound layer.
- a halide a fluoride, a chloride, a bromide, an iodide, etc. can be mentioned.
- FIG. 1 is an explanatory side view showing Example 1 of an electroluminescent device according to the present invention.
- FIG. 2 is a characteristic diagram showing a luminance-current relationship of the electroluminescent device shown in FIG.
- FIG. 3 is a characteristic diagram of a light emitting spectrum of the electroluminescent device shown in FIG.
- FIG. 4 is a characteristic diagram illustrating a relationship between luminance and current of the electroluminescent element according to the second embodiment.
- FIG. 5 is a characteristic diagram of a light emitting spectrum of the electroluminescent device according to the second embodiment.
- FIG. 6 is a characteristic diagram showing a relationship between luminance and current of the electroluminescent device according to Example 3.
- FIG. 7 is a characteristic diagram of a light emitting spectrum of the electroluminescent device according to the third embodiment.
- FIG. 8 is a characteristic diagram showing a relationship between luminance and current of the electroluminescent element according to Example 4.
- FIG. 9 is a characteristic diagram of a light emitting spectrum of the electroluminescent device according to the fourth embodiment.
- FIG. 10 is a characteristic diagram illustrating a relationship between luminance and current of the electroluminescent device according to Example 5.
- FIG. 11 is a characteristic diagram of a light emitting spectrum of the electroluminescent device according to the fifth embodiment.
- FIG. 12 is a characteristic diagram illustrating a luminance-current relationship of the electroluminescent element according to Example 6.
- FIG. 13 is a characteristic diagram of an emission spectrum of the electroluminescent device according to Example 6.
- FIG. 14 is a schematic configuration diagram for measuring the light emission lifetime of the electroluminescent device.
- FIG. 15 is a transient response of the oscilloscope observing the light emission lifetime of the electroluminescent device according to the fourth embodiment.
- FIG. 16 shows the light emitting spectrum and CBP of the electroluminescent devices according to Examples 3 to 6. Phosphorescence spectrum.
- FIG. 17 is an explanatory side view showing Example 7 of the electroluminescent device according to the present invention.
- FIG. 18 is a characteristic diagram of a light emitting spectrum of the electroluminescent device shown in FIG.
- FIG. 19 is a characteristic diagram of an emission spectrum of the electroluminescent device according to Example 8.
- FIG. 20 is a characteristic diagram of an emission spectrum of the electroluminescent device according to Example 9.
- FIG. 21 is a characteristic diagram of an emission spectrum of the electroluminescent device according to Example 10.
- FIG. 22 is a characteristic diagram of a light emitting spectrum of the electroluminescent device according to Example 11.
- FIG. 1 is an explanatory side view showing an electroluminescent device according to a first embodiment of the present invention
- FIG. 2 is a characteristic diagram showing a relationship between luminance and current of the electroluminescent device shown in FIG. 1
- FIG. 3 is a characteristic diagram of a light emitting spectrum of the electroluminescent device shown in FIG.
- Electroluminescent device 1 was produced as follows.
- the light emitting layer 5 was formed thereon.
- the light-emitting layer 5 is formed by co-evaporation of an organic compound, 4,4-bis (carbazolyl 9-yl) -biphenyl (hereinafter referred to as “CBP” unless otherwise specified) and an inorganic compound, europium iodide. Formed.
- CBP 4,4-bis (carbazolyl 9-yl) -biphenyl
- europium iodide an organic compound, 4,4-bis (carbazolyl 9-yl) -biphenyl
- the ratio of CBP to europium iodide was 2: 1 by weight, and the thickness of the light emitting layer 5 was 2 Onm.
- the deposition rate was 2 ⁇ / sec for CBP and 0.18 ⁇ for europium iodide (2: 1 by weight).
- vapor deposition was performed using bathocuproine to form a hole block layer 6 having a thickness of 15 nm. Further, vapor deposition was performed using tris (8-hydroxyquinoline) aluminum (Alq3) to obtain a thickness of 35 nm. The electron transport layer 7 was formed.
- an aluminum-lithium (A1U) alloy was further deposited thereon as an electrode by about 200 ⁇ m to obtain a cathode 8.
- reference numeral 9 denotes an electrode.
- a voltage of 18 V and a current of 359 mA / cm 2 were applied to the electroluminescent device 1 to emit light. It was 362 cd / V as measured by a luminance meter (Minolta LS-110).
- the main emission wavelength was about 687 mn.
- the current dependence of the spectrum is Not observed.
- the light emission starting voltage was 5V.
- the maximum external quantum efficiency was 0.18 (current 14.5 cd / m 2 , 7.12 mA / cm 2 ).
- the light emission (about 687M1) of the electroluminescent device 1 is generated by the transfer of energy from the organic compound CBP to the inorganic compound europium iodide. It is considered to have emitted light.
- FIG. 4 is a characteristic diagram showing a relationship between luminance and current of the electroluminescent device according to the second embodiment
- FIG. 5 is a characteristic diagram of a light emitting spectrum of the electroluminescent device according to the second embodiment.
- the light-emitting layer 5 was formed with the weight ratio of the organic compound CBP to the inorganic compound europium iodide being 10: 1.
- the thickness of the light emitting layer was set to 20 nm.
- Other element materials were the same, and the description is omitted.
- a voltage of 17 V and a current of 685 mA / cm 2 were applied to the electroluminescent device to emit light. Its departure The light luminance measured with a luminance meter (Minolta LS-110) was 363 cd / m 2 .
- the light emission starting voltage was 6V.
- the maximum external quantum efficiency is 0.18% (luminance 285cd / m 2 , current
- emission spectrum was measured with a multichannel detector (Hamamatsu Photonics PMA-11), emission spectra of both CBP (emission peak of singlet 404mn) and europium iodide (emission peak of 680nm) were observed. Further, the ratio of the light emitting spectrum was changed by the current.
- the organic compound layer is formed, and the europium iodide, which is an inorganic compound, is dispersed in a smaller amount than in Example 1 in CBP (light emitting peak of about 404 ⁇ ) that emits blue-violet light by itself.
- CBP light emitting peak of about 404 ⁇
- europium iodide emission peak of about 687M
- an electroluminescent device that emits light in pink (pink) can be obtained.
- FIG. 6 is a characteristic diagram showing the relationship between luminance and current of the electroluminescent device according to Example 3
- FIG. 7 is a characteristic diagram of a light emitting spectrum of the electroluminescent device according to Example 3.
- the light-emitting layer 5 was formed by co-evaporation of organic compound C ⁇ and inorganic compound cerium iodide.
- the ratio of carbon dioxide to cerium iodide was 2: 1 by weight, and the thickness of the light emitting layer 5 was 20M1.
- a voltage of 14 V and a current of 447.5 mA / cm 2 were applied to the electroluminescent device to emit light.
- the emission luminance was measured at 486 cd / m 2 by a luminance meter (Minol Yu LS-110).
- the light emission starting voltage was 6V.
- the maximum external quantum efficiency was 0.11 (brightness 21.7 cd /] n 2 , current 8.05 mA / cm 2 ).
- this electroluminescent device is enhanced by the triplet state emission of the organic compound CBP by doping the inorganic compound, iodide, or iodine. It is considered that the energy transfer from the compound CBP to the inorganic compound cerium iodide caused the inorganic compound cerium iodide to emit light.
- the light emission of the electroluminescent device according to the present embodiment is due to the light emission in the triplet state of CBP
- the light emission from the triplet exciton can be used, which limits the theoretical internal quantum efficiency. Is improved to 75%, which is three times higher than before. Therefore, the production of an electroluminescent device that emits light with high efficiency is expected in the future.
- FIG. 8 is a characteristic diagram showing a relationship between luminance and current of the electroluminescent element according to Example 4,
- FIG. 9 is a characteristic diagram of a light emitting spectrum of the electroluminescent element according to Example 4.
- FIG. 9 is a characteristic diagram of a light emitting spectrum of the electroluminescent element according to Example 4.
- the light emitting layer 5 was formed by co-evaporating CBP as an organic compound and cerium bromide as an inorganic compound.
- the ratio between CBP and cell bromide was 2: 1 by weight, and the thickness of the light emitting layer 5 was 20iun.
- a voltage of 14 V and a current of 532.5 mA / cm 2 were applied to the electroluminescent device to emit light.
- the light emission luminance was measured by a luminance meter (Minolta LS-110) to be 129 cd / m 2 .
- the light emission starting voltage was 7V.
- the light emission of this electroluminescent device is the one in which the triplet state light emission of CBP, which is an organic compound, is enhanced by doping with ceramic compound, bromide, or an organic compound. It is probable that cerium bromide, an inorganic compound, emitted light due to energy transfer from CBP to cerium bromide, an inorganic compound.
- FIG. 10 is a characteristic diagram showing a relationship between luminance and current of the electroluminescent device according to Example 5
- FIG. 11 is a characteristic diagram of a light emitting spectrum of the electroluminescent device according to Example 5.
- the light emitting layer 5 was formed by co-evaporating CBP as an organic compound and terbium iodide as an inorganic compound.
- the ratio of CBP to terbium iodide was 2: 1 by weight, and the thickness of the light emitting layer 5 was 20MI.
- a voltage of 22 V and a current of 584.5 mA / cra 2 were applied to the electroluminescent device to emit light.
- the emission luminance was measured to be 186 cd / in 2 using a luminance meter (Minolta LS-110).
- the light emission starting voltage was 8 V.
- the emission spectrum was measured with a multichannel detector (Hamamatsu Photonics PMA-11), yellow-green emission with an emission peak at 555 was observed.
- This emission peak does not coincide with the singlet state emission peak (404 nm) of CBP, but almost coincides with the CBP phosphorescence, that is, the triplet state emission peak of 559 nm.
- the light emission (about 555 nm) of this electroluminescent device is due to the enhanced photoluminescence of the organic compound CBP due to the doping of terbium iodide, an inorganic compound, or the organic compound.
- terbium iodide an inorganic compound
- CBP which is an inorganic compound
- terbium iodide an inorganic compound
- the emission peak of terbium ion appears in the sharp at 547ra
- the emission peak appearing at 555 ⁇ is probably not due to the terbium ion, and it is highly likely that the phosphorescence emission of CBP was enhanced. .
- terbium iodide an inorganic compound
- CBP organic compound layer
- blue-violet light emission peak of about 404 mn
- an electroluminescent device emitting yellow-green light (emission peak of about 555 nm) was obtained.
- FIG. 12 is a characteristic diagram showing a luminance-current relationship of the electroluminescent device according to Example 6, and FIG. 13 is a characteristic diagram of a light emitting spectrum of the electroluminescent device according to Example 6.
- the light emitting layer 5 was formed by co-evaporating CBP as an organic compound and lead iodide as an inorganic compound.
- the ratio of CBP to lead iodide is 10: 10 by weight.
- the thickness of the light-emitting layer 5 was set to 20 nm.
- a voltage of 20 V and a current of 702 mA / cm 2 were applied to the electroluminescent device to emit light. It was 99 cd / m 2 as measured by a luminance meter (Minolta LS-110). The light emission starting voltage was 6V. The external quantum efficiency was 0.018% (brightness 2.7 cd / m 2 , 6.58 mA / cni 2 ).
- the emission spectrum was measured with a multi-channel detector (Hamamatsu Photonics PMA-11), green emission having an emission peak at 550 mn was observed.
- This emission peak does not coincide with the singlet state emission peak (404 nm) of CB, but almost coincides with the phosphorescence emission of CBP, ie, the triplet state emission peak of 559 nm.
- the emission peak of lead ions also appears at 500 to 520 mn, which is close to the emission peak of the electroluminescent device.
- the emission (about 550 nm) of this electroluminescent device 1 is based on the lead oxide, an inorganic compound.
- the emission of the organic compound CBP in the triplet state is enhanced, or the energy transfer from the organic compound CBP to the inorganic compound lead iodide leads to the inorganic compound lead iodide It is considered that light was emitted.
- an organic compound layer is formed, and by independently dispersing lead iodide, an inorganic compound, into CBP (emission peak of about 404 nm), which emits blue-violet light by itself, an electroluminescent element that emits green light eventually (Emission peak of about 550 ⁇ ) was obtained.
- the emission having an emission peak at about 550 to 570 mn may be due to the triplet state emission (phosphorescence) of the organic compound CBP, or cerium iodide.
- the following experiment was conducted to confirm whether the emission was due to emission of inorganic compounds such as cerium and cerium bromide.
- FIG. 14 shows a schematic configuration diagram for measuring the light emission lifetime of the electroluminescent device.
- a square wave electrode (OV-7.5V, repetition frequency 5Hz, duty ratio ⁇ ) was applied to each electroluminescent element, and the light emission was detected by a photomultiplier tube, and the light emission lifetime was measured. Observed with a digital storage oscilloscope. After the voltage cutoff, we observed the time for the emission intensity to decay to 1 / e of the maximum value (natural logarithmic e).
- FIG. 15 shows a transient response of the oscilloscope observing the light emission lifetime of the electroluminescent device according to the fourth embodiment.
- FIG. 16 shows the light emitting spectrum and the phosphorescent spectrum of CBP of the electroluminescent devices according to Examples 3 to 6.
- the light emission lifetime of the electroluminescent device according to Example 4 was as long as 19.45 / 45sec.
- FIG. 15 shows the electroluminescent device according to Example 4 as an example, all of the electroluminescent devices according to Examples 3 to 6 have a light emission lifetime of 10 seconds or more. Was. This is long considering that the luminescence lifetime of an electroluminescent device using a general fluorescent dye is 1 second or less (on the order of nanoseconds).
- the luminescent lifetime of the electroluminescent devices of Examples 3 to 6 is as follows.
- the emission spectrum of the phosphorescent light is known, and as shown in FIG. 16, the emission spectrum of each electroluminescent device and the emission spectrum of the C-light emission qualitatively match.
- each electroluminescent device is within the lifetime of phosphorescence, and the emission spectrum of each electroluminescent device and the phosphorescent emission spectrum of CBP qualitatively match. It was revealed that the light emission of the obtained electroluminescent device was due to light emission (phosphorescence) in the triplet state of the organic compound CBP.
- each electroluminescent element is due to light emission (phosphorescence) in the triplet state of CBP
- light emission from the triplet exciton can be used as described above.
- the production of an electroluminescent device that emits light with high efficiency can be expected in the future.
- FIG. 17 is an explanatory side view showing an electroluminescent device according to Example 7 of the present invention.
- FIG. 18 is a characteristic diagram of an emission spectrum of the electroluminescent device shown in FIG.
- An electroluminescent device 1a was fabricated as follows, and the result was set as Example 7.
- N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -benzidine depositing TPD) vacuum vapor deposition method (degree of vacuum 2.0X10- 4 Pa, after the same) Niyotsu Te about 60 ⁇ thick, forming a hole transporting layer 4.
- the light emitting layer 5a was formed thereon.
- the light emitting layer 5a is composed of an organic compound CBP and
- the ratio of portium was 75:25 by weight, and the thickness of the light emitting layer 5 was 20 nm.
- the deposition rates are 3 ⁇ Zsec for CBP and 1 ⁇ / sec for europium bromide.
- vapor deposition was performed thereon using an oxaziazole derivative (OXD-7) to form a hole blocking layer / electron transport layer 6a having a thickness of 60 nm.
- OXD-7 oxaziazole derivative
- evaporation was performed using lithium fluoride (LiF) to form an electron injection layer 10 having a thickness of 0.7 M, and about 100 nm of aluminum was further evaporated thereon as an electrode to obtain a cathode 8 a.
- reference numeral 9 denotes an electrode.
- a voltage of 18 V and a current of 420 mA / cin 2 were applied to the electroluminescent device la to emit light.
- the emission luminance was measured with a luminance meter (Minol Yu LS-110) and found to be 40.9 cd / m 2.
- FIG. 19 is a characteristic diagram of a light emitting spectrum of the electroluminescent device according to Example 8,
- FIG. 20 is a characteristic diagram of a light emitting spectrum of the electroluminescent device according to Example 9,
- FIG. 21 is a characteristic diagram of an emission spectrum of the electroluminescent device according to Example 10.
- the light emitting layer was formed by co-evaporation of CBP and europium bromide
- the light emitting layer was formed by a ternary co-evaporation method in which cesium iodide was added to CBP and europium bromide. Then, we examined how the emission spectrum would be affected by changing the amount of cesium iodide to be deposited.
- the deposition rate is 1 to 3 angstroms of CBP, 0.1 to 1 angstroms of Zinc for europium bromide, and 0.1 to 1 angstroms of cesium iodide.Emission layers of Examples 8 to 10
- the composition ratios of europium bromide and cesium iodide in Example 1 are shown in Table 1 together with Example 7.
- composition of the light-emitting layer is expressed by weight%, and the total of CBP, europium bromide and cesium iodide is shown to be 100% in total.
- blue light-emitting materials eg, ⁇ - ⁇ ⁇ PD, perylene, PVK, etc.
- ⁇ - ⁇ ⁇ PD perylene
- PVK perylene
- blue color purity e.g., blue light-emitting materials used in conventional organic electroluminescent devices
- For good blue display use blue Although a color filter that cuts light outside the wavelength range indicating the above can be used, the structure is complicated and the cost is high, and the efficiency is reduced because light in a region other than blue is cut.
- the fact that the blue purity is not improved is not preferable as a display element such as a flat panel display aiming at full colorization.
- FIG. 22 is a characteristic diagram of an emission spectrum of the electroluminescent device according to Example 11;
- the light emitting layer was formed by a ternary simultaneous vapor deposition method in which CBP, europium iodide and barium iodide were added.
- the deposition rate is 1 to 3 angstroms per second for CBP, 0.1 to 1 angstroms Zsec for europium iodide, and 0.1 to 1 angstroms / sec for barium iodide.
- an inorganic compound is dispersed in at least one of one or more organic compound layers provided between an anode and a cathode to produce an electroluminescent element, whereby the inorganic compound is applied with a DC voltage.
- An electroluminescent device that can emit light at a low voltage can be obtained.
- the useful research results (emission characteristics, etc.) of inorganic electroluminescent elements that have been conventionally accumulated can be used effectively.
- an inorganic compound emits light, it is expected to provide an electroluminescent element that is less likely to deteriorate and can withstand long-term use, compared to an organic electroluminescent element using an organic compound for the light emitting layer.
- the emission color of the electroluminescent element can be changed by dispersing the inorganic compound in the organic compound layer which is the light emitting layer.
- the emission color of the electroluminescent device can be changed by changing the inorganic compound dispersed in the organic compound layer. That is, by changing the inorganic compound to be dispersed, various luminescent colors (wide luminescent region) can be obtained from the same organic compound as the host material. Therefore, for example, when a display is manufactured using the electroluminescent device according to the present invention, the required host material can be reduced, and as a result, an organic compound that can suppress the production cost of the display is CBP.
- the inorganic compound is at least one compound selected from the group consisting of cerium iodide, cerium bromide, terbium iodide, and lead iodide
- the light emission of the electroluminescent element is CBP triplet light emission Since it is based on (Aimitsu), light emission from triplet excitons can be used, and it can be expected that electroluminescent devices that emit light with high efficiency will be produced.
- the inorganic compound is a combination of a europium halide and a halide of an alkali metal, or a combination of a europium halide and a halide of an alkaline earth metal, blue light with good color purity is emitted.
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- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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AU2003203363A AU2003203363A1 (en) | 2003-01-21 | 2003-01-21 | Electroluminescent element |
US10/543,036 US7303825B2 (en) | 2003-01-21 | 2003-01-21 | Electroluminescence device |
EP03701829A EP1589786A4 (en) | 2003-01-21 | 2003-01-21 | electroluminescent |
PCT/JP2003/000492 WO2004066684A1 (ja) | 2003-01-21 | 2003-01-21 | 電界発光素子 |
Applications Claiming Priority (1)
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PCT/JP2003/000492 WO2004066684A1 (ja) | 2003-01-21 | 2003-01-21 | 電界発光素子 |
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WO2004066684A1 true WO2004066684A1 (ja) | 2004-08-05 |
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PCT/JP2003/000492 WO2004066684A1 (ja) | 2003-01-21 | 2003-01-21 | 電界発光素子 |
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US (1) | US7303825B2 (ja) |
EP (1) | EP1589786A4 (ja) |
AU (1) | AU2003203363A1 (ja) |
WO (1) | WO2004066684A1 (ja) |
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US9450200B2 (en) * | 2012-11-20 | 2016-09-20 | Samsung Display Co., Ltd. | Organic light emitting diode |
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JP2001196178A (ja) * | 2000-01-11 | 2001-07-19 | Fuji Photo Film Co Ltd | 発光素子 |
JP2002299063A (ja) * | 2001-04-03 | 2002-10-11 | Japan Science & Technology Corp | 臭化鉛系層状ペロブスカイト化合物を発光層とした電界発光素子 |
JP2003036977A (ja) * | 2001-07-25 | 2003-02-07 | Japan Science & Technology Corp | ハロゲン化鉛系層状ペロブスカイト化合物の燐光を利用した電界発光素子 |
JP2003059665A (ja) * | 2001-02-19 | 2003-02-28 | Kyushu Electric Power Co Inc | 電界発光素子 |
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JPH01213989A (ja) | 1988-02-23 | 1989-08-28 | Oki Electric Ind Co Ltd | Elパネルの形成法 |
JPH01217885A (ja) | 1988-02-25 | 1989-08-31 | Komatsu Ltd | 薄膜el素子 |
JPH03126787A (ja) | 1989-10-13 | 1991-05-29 | Matsushita Electric Ind Co Ltd | 高分子発光体 |
JPH07263146A (ja) | 1994-03-23 | 1995-10-13 | Olympus Optical Co Ltd | 発光素子 |
JPH08102360A (ja) * | 1994-09-29 | 1996-04-16 | Toyota Central Res & Dev Lab Inc | 有機無機複合薄膜型電界発光素子 |
JPH08288067A (ja) | 1995-04-11 | 1996-11-01 | Hitachi Maxell Ltd | 薄膜型エレクトロルミネッセンス素子 |
JPH108044A (ja) | 1996-06-27 | 1998-01-13 | Mitsui Mining & Smelting Co Ltd | ZnS:Mn系蒸着用材料 |
US5958573A (en) | 1997-02-10 | 1999-09-28 | Quantum Energy Technologies | Electroluminescent device having a structured particle electron conductor |
US5871579A (en) * | 1997-09-25 | 1999-02-16 | International Business Machines Corporation | Two-step dipping technique for the preparation of organic-inorganic perovskite thin films |
US6395409B2 (en) * | 1997-09-29 | 2002-05-28 | Minolta Co., Ltd. | Organic electroluminescent element |
US6631147B2 (en) * | 1998-09-14 | 2003-10-07 | Optc Co., Ltd. | Organic semiconductor laser device |
US6097147A (en) * | 1998-09-14 | 2000-08-01 | The Trustees Of Princeton University | Structure for high efficiency electroluminescent device |
JP2001279429A (ja) * | 2000-03-30 | 2001-10-10 | Idemitsu Kosan Co Ltd | 素子用薄膜層の成膜方法及び有機エレクトロルミネッセンス素子 |
JP2001313178A (ja) * | 2000-04-28 | 2001-11-09 | Pioneer Electronic Corp | 有機エレクトロルミネッセンス素子 |
SG118110A1 (en) * | 2001-02-01 | 2006-01-27 | Semiconductor Energy Lab | Organic light emitting element and display device using the element |
CN1277872C (zh) * | 2001-02-20 | 2006-10-04 | 安德鲁斯街大学管理处 | 含金属的树状物 |
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2003
- 2003-01-21 EP EP03701829A patent/EP1589786A4/en not_active Withdrawn
- 2003-01-21 US US10/543,036 patent/US7303825B2/en not_active Expired - Fee Related
- 2003-01-21 AU AU2003203363A patent/AU2003203363A1/en not_active Abandoned
- 2003-01-21 WO PCT/JP2003/000492 patent/WO2004066684A1/ja not_active Application Discontinuation
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JP2001196178A (ja) * | 2000-01-11 | 2001-07-19 | Fuji Photo Film Co Ltd | 発光素子 |
JP2003059665A (ja) * | 2001-02-19 | 2003-02-28 | Kyushu Electric Power Co Inc | 電界発光素子 |
JP2002299063A (ja) * | 2001-04-03 | 2002-10-11 | Japan Science & Technology Corp | 臭化鉛系層状ペロブスカイト化合物を発光層とした電界発光素子 |
JP2003036977A (ja) * | 2001-07-25 | 2003-02-07 | Japan Science & Technology Corp | ハロゲン化鉛系層状ペロブスカイト化合物の燐光を利用した電界発光素子 |
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Also Published As
Publication number | Publication date |
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US7303825B2 (en) | 2007-12-04 |
EP1589786A4 (en) | 2009-04-08 |
US20060049746A1 (en) | 2006-03-09 |
AU2003203363A8 (en) | 2004-08-13 |
AU2003203363A1 (en) | 2004-08-13 |
EP1589786A1 (en) | 2005-10-26 |
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