WO2004049426A1 - 電子部品実装用フィルムキャリアテープ - Google Patents
電子部品実装用フィルムキャリアテープ Download PDFInfo
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- WO2004049426A1 WO2004049426A1 PCT/JP2003/014156 JP0314156W WO2004049426A1 WO 2004049426 A1 WO2004049426 A1 WO 2004049426A1 JP 0314156 W JP0314156 W JP 0314156W WO 2004049426 A1 WO2004049426 A1 WO 2004049426A1
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- WIPO (PCT)
- Prior art keywords
- solder resist
- resist layer
- wiring pattern
- connection terminal
- film carrier
- Prior art date
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/4985—Flexible insulating substrates
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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Definitions
- the present invention relates to a film carrier tape for mounting electronic components that is less likely to crack or break in a wiring pattern formed on the film carrier when the electronic component is mounted on the film carrier using ultrasonic heating.
- connection pattern is electrically connected to the connection terminals (bonding pads) of the wiring pattern by applying ultrasonic waves to the wiring pattern formed on the film carrier while heating.
- connection terminals bonding pads
- FC flip chip
- the electronic component 80 has a bump electrode 81 formed on the output terminal and a bonding pad 88 formed on the film carrier 89, and a gold wire 87.
- a bump electrode 81 or a bonding pad 88 When making electrical connection by using a bump electrode 81 or a bonding pad 88, a gold wire 87 is abutted, and ultrasonic waves are applied while heating using a bonding tool (not shown).
- the electronic component 80 is mounted on the film carrier 89 by fusing the gold wire 87 to the bump electrode 81 and the bonding pad 88.
- the film carrier 89 on which such a bonding pad 88 is formed is roughly formed by attaching a conductive metal foil such as an electrolytic copper foil to the surface of an insulating film 86 made of a polyimide film or the like.
- a photosensitive resin layer is coated on the surface of the conductive metal foil, and the photosensitive resin layer is exposed to a desired pattern and developed to form a pattern made of a photosensitive resin.
- a wiring pattern corresponding to the pattern made of the photosensitive resin is formed, and the bonding pattern of the wiring pattern thus formed is exposed. It is manufactured by forming the solder resist layer 85 in such a manner as described above.
- a solder resist layer is applied on the formed wiring pattern, and electronic components are adhered on the solder resist layer using an adhesive or the like.
- the electronic component is mounted by wire bonding the bump electrode formed on the non-adhered part of the electronic component to the bonding pad exposed from the edge of the solder layer, and the electronic component is mounted. It is becoming possible to use highly rigid resins. For this reason, the wiring pattern formed on the insulating film is firmly held between the insulating film 86 and the solder resist layer 85, and the degree of freedom with respect to vibration and the like has been reduced.
- the wiring pattern is firmly sandwiched and protected between the insulating film and the solder resist layer as described above.
- the wiring pattern near the edge of the solder resist layer is directly affected by the ultrasonic vibration applied to the bonding pad.
- such wiring patterns are made of thin conductive metal.
- An object of the present invention is to provide a film carrier tape for mounting electronic components, in which cracks or disconnections are less likely to occur in a wiring pattern due to ultrasonic heating during wire bonding.
- An electronic component mounting film carrier tape of the present invention has an internal connection terminal, an external connection terminal, and a wiring connecting these connection terminals on a surface of an insulating film, and a solder resist layer so that the connection terminals are exposed.
- an ultrasonic wave is applied to the internal connection terminal to establish an electrical connection between the connection terminal of the electronic component and the internal connection terminal.
- the solder tape a portion from the portion where the internal connection terminal is electrically connected to the connection terminal of the electronic component to the edge of the solder resist layer from the solder resist layer.
- the wiring of a portion protected by the solder resist layer within a range of 100 m from the coating edge of the solder resist layer is formed substantially linearly.
- Such a film carrier tape for mounting an electronic component of the present invention has a crystal structure of a conductive metal constituting wiring before an electrical connection is established between the electronic component and the electronic component.
- the crystal structure of the conductive metal that forms the wiring after the electrical connection is established has the same structure, and the conductive structure is generated by ultrasonic waves and heating applied to establish the electrical connection with the electronic component. It is configured such that the crystalline structure of the reactive metal does not substantially change.
- the carrier tape of the present invention having the above-described structure, ultrasonic waves are applied under heating in order to establish electrical connection with the electronic component. Since the carrier tape has a structure in which the stress applied to the wiring pattern by the ultrasonic waves is unlikely to concentrate, it is possible to prevent the breakage or cracking of the wiring due to the concentration of the stress, and It is also highly effective in preventing cracks in the solder resist.
- FIG. 1 is a cross-sectional view showing an example of a film carrier tape for mounting electronic components according to the present invention.
- FIG. 2 is a perspective view showing a state where wire bonding is performed on internal connection terminals formed on the film carrier tape for mounting electronic components of the present invention.
- FIG. 3 is an enlarged plan view showing, in an enlarged manner, a portion of the internal connection terminal subjected to wire bonding.
- FIG. 4 is a sectional view taken along line AA in FIG.
- FIG. 5 is a diagram showing the occurrence of cracks or disconnections in the wiring pattern near the bonding pad.
- FIG. 6 is a diagram showing a state of occurrence of cracks or disconnections in a wiring pattern near a bonding pad.
- FIG. 7 is an electron micrograph showing an example of a cross-section of a particle structure of electrolytic copper in a portion where a crack or disconnection has occurred.
- FIG. 8 is an electron micrograph showing an example of the particle structure of a cross section of electrolytic copper.
- FIG. 9 is a cross-sectional view showing another embodiment of the film carrier tape for mounting electronic components of the present invention.
- FIG. 10 is a cross-sectional view showing a state of wire bonding in a conventional film carrier tape for mounting electronic components.
- FIG. 1 is a cross-sectional view showing an example of a film carrier tape for mounting electronic components according to the present invention
- FIG. 2 is a perspective view showing a state where wires are bonded to internal connection terminals
- FIG. FIG. 4 is an enlarged plan view showing a portion of the connection terminal in an enlarged manner.
- FIG. 4 is a cross-sectional view taken along the line AA in FIG.
- the film carrier tape 10 for mounting electronic parts of the present invention is an insulating film. Norem 11, a wiring pattern 12 formed on at least one surface of the insulating film 11, and an internal connection terminal 13 and an external connection terminal 14 of the wiring pattern 12 are formed to be exposed. Solder resist layer 15 is provided. In addition, the surfaces of the internal connection terminals 13 and the external connection terminals 14 exposed from the solder resist layer 15 are usually plated with tin, solder, gold, nickel-gold or the like according to the intended use. ing. In the electronic component mounting film carrier tape shown in FIGS. 1 to 4, the electronic component 21 is disposed on the surface of the solder resist layer 15 via an adhesive layer 27.
- the film carrier tape 10 for mounting an electronic component of the present invention as shown in FIGS. 1 and 2 has a conductive metal foil adhered to the surface of the insulating film 11, and the surface of the conductive metal foil is further photosensitive. A resin is applied, the photosensitive resin is exposed and developed to form a desired pattern, and the pattern is used as a masking material to selectively etch a conductive metal foil to form a wiring pattern made of the conductive metal. It can be manufactured by forming.
- the insulating film 11 forming the electronic component mounting film carrier tape 10 of the present invention comes into contact with an acid or the like at the time of etching. It has heat resistance so that it does not deteriorate even by heat.
- Examples of a material forming the insulating film 11 include polyester, polyamide, polyimide, and the like. Particularly, in the present invention, it is preferable to use a film made of polyimide. Such polyimides have excellent heat resistance and chemical resistance compared to other resins. Examples of the polyimide resin include a wholly aromatic polyimide synthesized from pyromellitic dianhydride and aromatic diamine, and a biphenyl skeleton synthesized from biphenyltetracarboxylic dianhydride and aromatic diamine. And a wholly aromatic polyimide.
- a wholly aromatic polyimide having a biphenyl skeleton (eg, trade name: IUPLEX S, manufactured by Ube Industries, Ltd.) is preferably used.
- a wholly aromatic polyimide having a biphenyl skeleton has a lower water absorption than other wholly aromatic polyimides.
- the thickness of the insulating film 11 usable in the present invention is usually in the range of 25 to 125111, preferably in the range of 25 to 75 ⁇ m.
- the insulating film 11 forming the film carrier tape 10 for mounting electronic components of the present invention has sprocket sockets (perforation) 19 on both sides and solder ball holes 18 for exposing ball pads. ing. Further, slits, positioning holes and the like (not shown) may be formed.
- the conductive metal foil a copper foil, an aluminum foil, or the like can be used.
- the copper foil that can be suitably used here includes a rolled copper foil and an electrolytic copper foil, and the present invention is particularly effective when an electrolytic copper foil is used.
- the thickness of the electrolytic copper foil that is preferably used when manufacturing the film carrier tape 10 for mounting electronic components is gradually reduced in accordance with the recent demand for high-density mounting of electronic components.
- the lower limit of the thickness of such an electrolytic copper foil is not particularly limited, but the average thickness is Is less than 5 ⁇ m, it is difficult to manufacture it on an industrial scale, and even if it is manufactured, it is extremely difficult to handle an electrolytic copper foil having such an average thickness by itself. Therefore, the lower limit of the average thickness of the electrolytic copper foil that can be effectively used in the present invention is 5 ⁇ .
- a photosensitive resin is applied on the conductive metal foil, and the photosensitive resin layer thus formed is exposed and developed to form a pattern made of the photosensitive resin.
- a wiring pattern 12 made of a conductive metal is formed.
- the wiring pattern 12 thus formed has an internal connection terminal 13 for establishing an electrical connection with the electronic component 21 and an external connection terminal 14. 3 and the external connection terminal 14 are connected by a wiring 16 formed by selectively etching the conductive metal foil.
- an internal connection terminal 13 for establishing an electrical connection with the electronic component 21 and the internal connection terminal 13 are formed. These terminals were exposed because it was necessary to establish a new electrical connection using the external connection terminal 14 used to connect to the connection terminal 13 via the wiring 16 and to connect to the outside.
- the wiring 16 that electrically connects the internal connection terminal 13 and the external connection terminal 14 must be kept in the same condition, such as when manufacturing a film carrier, mounting electronic components, or transporting. In order to prevent the wiring 16 from being damaged at the same time, and to secure the electrical insulation from the adjacent wiring, apply a solder resist to protect the wiring 16.
- Figures 1 to 3 show The application layer of the proper solder resist (ie, the solder resist layer) is indicated by reference numeral 15.
- Such a solder resist layer 15 is formed, for example, by applying a solder resist using a screen mask or the like and heating and curing, or by thermocompression bonding a solder resist forming resin piece punched into a predetermined shape. can do.
- the wiring pattern 12 is firmly held between the insulating film 11 and the wiring pattern 12 by the solder resist layer 15, and the wiring pattern 12 is It is less susceptible to damage by physical stress.
- the solder resist layer 15 By forming the solder resist layer 15 in this way, the wiring pattern 12 can be effectively protected from external stress, but on the other hand, the solder resist layer 15 is formed and the protected wiring Since the pattern 12 is firmly fixed between the solder resist layer 15 and the insulating film 11, the stress relaxation to the stress generated inside the wiring pattern is reduced.
- the electronic component 21 is used to establish electrical connection with the film carrier.
- the conductive metal wire is bonded to the bump electrode 22 formed on the electronic component 21, and the other end is bonded to the bonding pad, which is an internal connection terminal of the wiring pattern 12, using a bonding tool 30. 1 3 bonding tool 3 0 c used herein to bonding, the pressing conductive thin metal wires 2 5, such as gold wire bonding pad Doo (internal connection terminal) 1 3, pressurized By applying ultrasonic waves while heating, the conductive fine metal wires 25 are fused to the surface of the bonding pad 13.
- the temperature of the heating stage 40 during bonding is usually about 120 to 200 ° C., and the ultrasonic output is about 0.5 to 1.0 OW.
- the force to fuse the conductive metal wires 25 to the bonding pads by sound waves For example, when a thick electrolytic copper foil exceeding ⁇ 5 ⁇ m was used, the wiring pattern including the bonding pads 13 was used. 1 2 itself was not considered to be affected by the ultrasound from the bonding tool 30. However, as the thickness of the electrolytic copper foil used to form the wiring pattern 12 becomes smaller, the probability of cracks or disconnections in the wiring pattern 12 increases. Such cracks or disconnections in the wiring pattern 12 do not occur randomly but have a certain pattern for the occurrence of cracks or disconnections.
- such cracks or disconnections occurring in the wiring pattern 12 are generated after applying ultrasonic waves under heating using a bonding tool 30, and forming a wiring pattern at a place where a crack or a disconnection occurs.
- the crystal structure of the cross section at the place where the crack or disconnection occurred was smaller than that of the part where the crack or disconnection did not occur.
- the coarsened and rounded grain boundary becomes a break point, and the portion where such a break occurs is caused by the portion of the bonding pad 13 where ultrasonic waves are applied.
- the electrolytic copper foil used for forming the wiring pattern has a fine and angular electrodeposited structure, and the structure of the electrolytic copper foil does not change even after forming the wiring pattern.
- the composition of the part where no cracks or breaks occur is the same as the composition of the electrolytic copper foil used, and the crystal structure of the electrolytic copper foil, the wiring pattern before bonding, and the wiring pattern after bonding have the same crystal structure. If there is, no crack or disconnection will occur.
- the crystal structure of the electrolytic copper foil does not change when it is heated at 300 ° C for 1 hour, for example, when it is heated at 400 ° C for 30 minutes, the wiring It was confirmed that the electrolytic copper crystal grains similar to the portions where cracks or disconnections occurred in the pattern were coarsened and recrystallized into a rounded state. However, there is no step of exposing the electrolytic copper to the above-mentioned severe heating conditions in the step of forming the wiring pattern on the insulating film.
- the superheated temperature is lower than a temperature at which the electrolytic copper is recrystallized, but the wiring pattern has It was found that stress greater than the stress corresponding to the thermal stress generated when the copper foil was heated to 400 ° C for 30 minutes was concentrated locally.
- solder resist layer integrated with the wiring pattern 12, and when a crack or disconnection occurs in the wiring pattern 12 at this part, the solder resist layer protects that part. Layers 15 also often show abnormalities such as cracks.
- the edge 15 a of the solder resist layer 15 exceeds the force of ⁇ ⁇ ⁇ ⁇ , the wiring is formed by the strong pinching force on the wiring pattern 12 by the solder resist layer 15 and the insulating film 11.
- the pattern 12 is firmly fixed, and the effect of the stress caused by the ultrasonic wave rapidly attenuates.
- the bonding pad 13 which is the wiring pattern 12 extending outward from the solder resist layer 15, and the wiring 16 connected thereto have one end insulated from the solder resist layer 15. Since it is firmly formed in a cantilever state by the film 11, it is easily affected by ultrasonic waves during bonding. Moreover, since the ultrasonic wave is shielded at a position of about 1000 m inside the edge 15 a of the solder resist layer, the bonding pad 13 is provided on the bonding pad 13 side from the edge 15 a. It is conceivable that the ultrasonic wave and the reflected ultrasonic wave resonate or interfere with each other. When the ultrasonic wave amplified by such interference or resonance is concentrated at one point, the structure of the crystal grains of the electrolytic copper is also reduced. Is thought to be a changing stress You.
- the present inventors formed a wiring pattern having a shape indicated by (a) to () in FIG. 5 using an electrolytic copper foil having an average thickness of 18 ⁇ m, and formed a polyimide film having an average thickness of 5 ⁇ m.
- a solder resist is applied so that the edge 15a is located at a position of 500 ⁇ m from the end of the insulating film made of a solder film, and is cured to form a solder resist layer 15.
- a bonding pad 13 was formed as shown in Fig. 1, and ultrasonic waves were applied to the bonding spot BS while heating to examine the occurrence of cracks or disconnections in the wiring pattern.
- the ultrasonic output is 3.1 W
- the heating temperature of the heating stage 40 is 200 ° C
- the ultrasonic wave is applied for 0.2 seconds under these conditions.
- the above ultrasonic output and temperature are the maximum values of the equipment used, and the energy applied is 3 times or more the applied energy in ordinary bonding.
- the shape and dimensions of each bonding pad are as shown in Fig. 5.
- the distance from the end of the bonding spot BS to the edge 15a of the solder resist layer 15 A-1 is 500 ⁇ m.
- the wiring patterns shown in (a) to (e) in Fig. 5 are formed on the same insulating film, and are supersonic using the same bonding tool. Since the waves have been applied, the histories that have passed can be assumed to be the same.Therefore, the crack or disconnection in the wiring pattern is due to the shape of the wiring pattern, and the edge of the wiring pattern is If it changes sharply, the stress caused by ultrasonic heating during bonding will concentrate at this inflection point, and the particle structure of electrolytic copper at this inflection point will change, resulting in a bond at the interface of the coarsened copper particles. Cracks or disconnections occur due to the reduced force.
- the occurrence of cracks or breaks is concentrated at the inflection points of the wiring pattern, and the cracks or breaks are formed in the substantially linear wiring pattern having no such inflection points. Since no disconnection has occurred, at least between the bonding spot and the solder resist layer, the edge of the wiring pattern does not form an inflection point that changes sharply, that is, it is substantially linear.
- stress concentration is observed when the edges of the wiring pattern cross at an angle exceeding 5 degrees, and recrystallization of electrolytic copper particles is observed.
- stress concentration is recognized when the minimum crossing angle of the tangent before and after the curved part exceeds 5 degrees.
- At least the wiring pattern must be formed in a substantially straight line in the above-mentioned area. Must be formed substantially linearly.
- the wiring pattern formed within the range of ⁇ ⁇ m from the edge 15 a of the solder resist 15 is formed in a substantially linear shape. Therefore, no sharply changing inflection point is formed in the wiring pattern formed within this range. That is, in (f) to (: j) in FIG. 6, wiring patterns corresponding to (a) to (e) in FIG. 5 are formed, but (g) to (: i) FIG. 4 shows a mode in which there is an inflection point where the wiring pattern changes sharply below the solder resist layer 15.
- Figure 5 shows the bonding spot BS of such a wiring pattern.
- the heating temperature of the heating stage 4 ⁇ ⁇ was set to 200 ° C, and the maximum output from the bonding tool [ultrasonic output 3.1 W, temperature 200 ° C]
- the solder resist layer 15 was dissolved and removed using an organic solvent, and the wiring pattern existing under the solder resist layer 15 was cracked or disconnected.
- the particle structure of the electrolytic copper was examined using an electron microscope before and after the application of ultrasonic waves to the wiring pattern. No change in the particle structure was observed.
- the ultrasonic wave applied to the bonding pad 13 does not concentrate at one place, acts uniformly on the whole, and also generates heat energy. It does not lead to cracks or breaks due to dispersion.
- the ultrasonic wave used for wire bonding is an ultrasonic wave having an extremely small output compared to the ultrasonic wave used above, the probability of cracking or disconnection is small, but cracking or disconnection occurs.
- the particle structure of the film carrier (defective product) where cracks or breaks occurred using an electron microscope revealed that the crystal grains of electrolytic copper were coarsened and rounded in the same manner as above. The recrystallized state and the place where cracks or disconnections occur are also near the inflection point where the edge of the wiring pattern changes sharply as described above.
- the wiring pattern on the film carrier tape for mounting electronic components is It is generally formed in consideration of the position of the bump electrode on the electronic component to be mounted and the position of the external connection terminal on the film carrier.
- the cause of cracks or disconnections in such wiring patterns No rigorous analysis has been performed on. For this reason, when designing a wiring pattern, the wiring pattern is formed based on how to effectively use the limited space (space for forming the wiring pattern on the insulating film). In determining the shape, the probability of occurrence of cracks or disconnections was not taken into consideration, and if the electrolytic copper foil used had a certain thickness, disconnection or cracks could be generated by ultrasonic waves. There was no need to consider.
- the present invention is a film carrier tape for mounting electronic components having a wiring pattern capable of preventing cracks or disconnections caused by such ultrasonic waves. ADVANTAGE OF THE INVENTION According to this invention, generation
- the electronic component 21 and the film carrier are wire-bonded by ultrasonic waves using the conductive metal fine wire 25.
- the type of film carrier tape for mounting electronic components of the present invention is limited to the film carrier tape for mounting electronic components shown in FIGS. It is not something to be done.
- the slit is formed on the insulating film 11 and the electronic component 21 is placed on the surface of the insulating film 11 where the wiring pattern 12 is not formed.
- a film carrier tape for mounting electronic components in a form in which the bump electrode 22 located in the slit is electrically connected to the bonding pad 13 and the conductive thin metal wire 25 is shown. Even in such an electronic component mounting film carrier tape, since the ultrasonic waves are used when the conductive thin metal wires 25 are fused to the bonding pads 13, the wiring pattern is formed as described above. Thereby, a similar effect is achieved.
- FIG. 9B shows a film carrier tape for mounting electronic components having device holes.
- the bump electrodes 22 of the electronic components 21 and the bonding pads 13 are provided. Since the electrical connection is established by fusing the conductive metal wires 25 with ultrasonic waves, the same effect can be obtained by forming the wiring pattern as described above.
- the same members as those in FIG. 1 are given the same numbers.
- the internal connection terminals are brought into direct contact with the bump electrodes of the electronic components, and ultrasonic waves are applied to the internal connection terminals to directly connect the internal connection terminals to the bump electrodes. In such a case, the same effect can be obtained by forming the wiring pattern as described above. Industrial applicability
- the electronic part By applying ultrasonic waves to the internal connection terminals when establishing an electrical connection with the product, the wiring pattern is less likely to be broken or cracked. In particular, even when the wiring pattern is formed using a thin electrolytic copper foil, the wiring pattern is less likely to break or crack. Further, according to the present invention, cracks and the like hardly occur in the solder resist layer.
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/534,401 US20060027912A1 (en) | 2002-11-11 | 2003-11-06 | Film carrier tape for mounting of electronic part |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002-327052 | 2002-11-11 | ||
JP2002327052A JP2004165279A (ja) | 2002-11-11 | 2002-11-11 | 電子部品実装用フィルムキャリアテープ |
Publications (1)
Publication Number | Publication Date |
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WO2004049426A1 true WO2004049426A1 (ja) | 2004-06-10 |
Family
ID=32375703
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2003/014156 WO2004049426A1 (ja) | 2002-11-11 | 2003-11-06 | 電子部品実装用フィルムキャリアテープ |
Country Status (6)
Country | Link |
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US (1) | US20060027912A1 (ja) |
JP (1) | JP2004165279A (ja) |
KR (1) | KR20050075387A (ja) |
CN (1) | CN100355049C (ja) |
TW (1) | TW200415682A (ja) |
WO (1) | WO2004049426A1 (ja) |
Families Citing this family (3)
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KR100844430B1 (ko) * | 2007-08-24 | 2008-07-08 | (주)에이앤아이 | 전자부품간의 접속방법 |
TWI574460B (zh) * | 2011-04-29 | 2017-03-11 | 鴻海精密工業股份有限公司 | 電連接器端子 |
CN102760996B (zh) * | 2011-04-29 | 2016-08-03 | 富士康(昆山)电脑接插件有限公司 | 电连接器端子 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020043713A1 (en) * | 2000-10-13 | 2002-04-18 | Toshiharu Seko | COF-use tape carrier and COF-structured semiconductor device using the same |
JP2002231857A (ja) * | 2001-01-31 | 2002-08-16 | Mitsui Mining & Smelting Co Ltd | 電子部品実装用フィルムキャリアテープの製造方法および電子部品実装用フィルムキャリアテープの製造装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
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US5393383A (en) * | 1991-12-19 | 1995-02-28 | Valmet Paper Machinery Inc. | Compact press section with closed draw of the web in a paper machine |
EP1213756A3 (en) * | 1994-03-18 | 2005-05-25 | Hitachi Chemical Co., Ltd. | Fabrication process of semiconductor package and semiconductor package |
KR100455492B1 (ko) * | 1996-10-22 | 2005-01-13 | 세이코 엡슨 가부시키가이샤 | 필름캐리어테이프및그제조방법,테이프캐리어반도체장치어셈블리의제조방법,반도체장치및그제조방법,실장기판및전자기기 |
JPH11297889A (ja) * | 1998-04-16 | 1999-10-29 | Sony Corp | 半導体パッケージおよび実装基板、ならびにこれらを用いた実装方法 |
JP3344372B2 (ja) * | 1999-06-29 | 2002-11-11 | 日本電気株式会社 | 半導体装置の製造方法 |
TW469552B (en) * | 1999-12-10 | 2001-12-21 | Toshiba Corp | TAB type semiconductor device |
JP2003142632A (ja) * | 2001-11-01 | 2003-05-16 | Toshiba Corp | 半導体装置 |
-
2002
- 2002-11-11 JP JP2002327052A patent/JP2004165279A/ja active Pending
-
2003
- 2003-11-06 US US10/534,401 patent/US20060027912A1/en not_active Abandoned
- 2003-11-06 CN CNB2003801030413A patent/CN100355049C/zh not_active Expired - Fee Related
- 2003-11-06 KR KR1020057008317A patent/KR20050075387A/ko not_active Application Discontinuation
- 2003-11-06 WO PCT/JP2003/014156 patent/WO2004049426A1/ja active Application Filing
- 2003-11-10 TW TW092131431A patent/TW200415682A/zh unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020043713A1 (en) * | 2000-10-13 | 2002-04-18 | Toshiharu Seko | COF-use tape carrier and COF-structured semiconductor device using the same |
JP2002231857A (ja) * | 2001-01-31 | 2002-08-16 | Mitsui Mining & Smelting Co Ltd | 電子部品実装用フィルムキャリアテープの製造方法および電子部品実装用フィルムキャリアテープの製造装置 |
Also Published As
Publication number | Publication date |
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JP2004165279A (ja) | 2004-06-10 |
CN1711631A (zh) | 2005-12-21 |
KR20050075387A (ko) | 2005-07-20 |
US20060027912A1 (en) | 2006-02-09 |
TW200415682A (en) | 2004-08-16 |
CN100355049C (zh) | 2007-12-12 |
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