WO2003100112A1 - Matériau pour cible de pulvérisation - Google Patents

Matériau pour cible de pulvérisation Download PDF

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Publication number
WO2003100112A1
WO2003100112A1 PCT/JP2003/006455 JP0306455W WO03100112A1 WO 2003100112 A1 WO2003100112 A1 WO 2003100112A1 JP 0306455 W JP0306455 W JP 0306455W WO 03100112 A1 WO03100112 A1 WO 03100112A1
Authority
WO
WIPO (PCT)
Prior art keywords
sputtering target
target material
mass
thin film
resistance
Prior art date
Application number
PCT/JP2003/006455
Other languages
English (en)
Japanese (ja)
Inventor
Koichi Hasegawa
Nobuo Ishii
Tomoyoshi Asaki
Original Assignee
Ishifuku Metal Industry Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ishifuku Metal Industry Co., Ltd. filed Critical Ishifuku Metal Industry Co., Ltd.
Priority to AU2003242423A priority Critical patent/AU2003242423A1/en
Priority to JP2004507551A priority patent/JP4162652B2/ja
Publication of WO2003100112A1 publication Critical patent/WO2003100112A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Definitions

  • the present invention relates to a sputtering target material for forming a thin film having improved corrosion resistance, particularly sulfuration resistance, while maintaining high reflectance, and a thin film formed by using the sputtering target material.
  • Reflective films used for optical recording media such as CD (Compact Disc) and DVD (Digital Versatile Disc), reflective STN (Super Twist Nemetic) liquid crystal display, organic EL (Electro luminescence) display, etc.
  • A1 or A1 alloy is used for the light-reflective conductive film used in the above.
  • the light-reflective thin film used for the above-mentioned optical recording media, liquid crystal display devices, organic EL display devices, and the like is generally prepared by forming a sputtering target material having desired properties, and then forming the sputtering target material. It is manufactured by using RF (high frequency) sputtering and DC (direct current) sputtering.
  • the thin film made of A1 or A1 alloy produced by the above method has a certain degree of reflectivity and low electric resistance, and forms a passivation film on the surface, so that it has stable corrosion resistance even in air.
  • the reflectivity of a thin film made of A1 or A1 alloy is, for example, about 80% in the case of light with a wavelength of 70 Onm, which is sufficient for applications requiring high reflectivity. Not something you can do.
  • Au is expensive, and Ag has a problem in corrosion resistance, especially oxidation resistance and sulfidation resistance, as compared with A 1.
  • Ag reacts with sulfur, it forms the sulfide of Ag and turns black, reducing the reflectance.
  • laser light of a short wavelength such as 405 nm will be used to increase the storage capacity.
  • Corrosion resistance and heat resistance under such conditions will be used. Sex etc. are required.
  • a main object of the present invention is to provide a sputtering target material for forming a thin film made of an Ag alloy having improved corrosion resistance, particularly improved sulfidation resistance, while maintaining high reflectance. Disclosure of the invention
  • Ag has a specific small amount of In and at least one kind of metal component selected from Cu, Ni and Co. Alloying by adding a small amount of Ag to obtain an Ag-based alloy with significantly improved corrosion resistance, especially sulfuration resistance and heat resistance, while maintaining the high reflectivity of Ag.
  • Au,? 1: and? (It has been found that when a small amount of at least one other metal component selected from 1 is added to form an alloy, the corrosion resistance, particularly the sulfidation resistance, is further improved, and the present invention has been completed.
  • the present invention relates to Ag, 0.01 to 5.0 mass% of In and 0.01 to 5.0 mass% of at least one selected from Cu, Ni and Co.
  • An object of the present invention is to provide a sputtering target material for forming a highly corrosion-resistant thin film having a high reflectivity, which is characterized by being formed of an Ag-based alloy that has been compacted.
  • the present invention also relates to Ag, 0.01 to 5.Omass% of In, 0.01 to 5.0mass% of at least one selected from Cu, Ni and Co, Au, Pd and A sputtering target for forming a highly corrosion-resistant thin film having a high reflectivity characterized by being composed of an Ag-based alloy containing at least one selected from Pt in an amount of 0.01 to less than 0.1 lmass%. Materials.
  • the present invention also provides that Ag contains 0.1 to 5.0 mass% of In and at least one of 0.1 to 5.0 mass% selected from Cu, Ni and C0. It is intended to provide a thin film made of an Ag-based alloy.
  • the present invention further relates to A g, wherein In is 0.01 to 5.0 mass%, and at least one selected from Cu, Ni and C0 force is 0.01 to 5.0 mass%,
  • An object of the present invention is to provide a thin film made of an Ag-based alloy containing at least one selected from the group consisting of Pd, Pd and Pt in an amount of less than 0.01 to 0.1 lmass%.
  • the sputtering target material of the present invention is based on Ag and added with In ′ and at least one selected from Cu, Ni and Co. It consists of an alloyed Ag alloy.
  • the above-mentioned In can be added in an amount in the range of 0.01 to 5. Omass%, preferably 0.1 to 1.5 mass%, based on Ag.
  • at least one metal component selected from Cu, Ni and Co has a total content of 0.01 to 5.0 mass%, preferably 0.1 to 1.5 mass%, based on Ag. It can be added in an amount within.
  • the sputtering target material of the present invention is based on Ag. To which In and at least one metal component selected from Cu, Ni and Co, and at least one other metal component selected from Au, Pd and Pt are added. It can also be made of an Ag-based alloy that has been alloyed.
  • In is added to Ag in an amount within the range of 0.01 to 5.0 mass%, and preferably in the range of 0.1 to 1.5 mass%. be able to.
  • At least one kind of metal component selected from Cu, Ni and Co is 0.01 to 5.0 mass% in total, preferably 0.1 to 1.5 mass% with respect to Ag.
  • at least one other metal component selected from A u and and, based on Ag has a total of 0.01 to less than 0.1 mass%, preferably 0.02 to 0.08 mass%. % Can be added.
  • the Ag alloy is obtained, for example, by adding at least one kind of metal component selected from In and Cu, Ni and Co to Ag in the above amount, or adding In and At least one metal component selected from Cu, Ni and C0 and at least one other metal component selected from Au, Pd and Pt are added in the above amounts.
  • Gas furnace, high frequency melting It can be manufactured by melting at a temperature of about 1000 to 1200 ° C. in a suitable metal melting furnace such as a furnace. The atmosphere at the time of melting is sufficient in the air, but if necessary, an inert gas atmosphere or vacuum may be used.
  • Ag used as a raw material; In; at least one metal component selected from Cu, Ni and Co and at least one other metal component selected from Au, Pd and Pt
  • those which are commercially available in the form of granules, plates, blocks or the like can be used, but those having a purity of usually 99.9% or more, particularly 99.95% or more are preferably used. is there.
  • At least one kind of metal component selected from In, Cu, Ni and Co, and some of them are selected from In, Cu, Ni and Co
  • At least one metal component and at least one selected from Au, Pd and Pt An Ag-based alloy containing the above-mentioned other metal components in the above ratio is obtained.
  • the sputtering target material composed of this Ag-based alloy maintains the high reflectivity inherent in Ag, and has the same corrosion resistance as oxidation resistance and sulfidation resistance. -Much better than Mg alloy.
  • the sputtering target material composed of the Ag-based alloy of the present invention is suitable for use as a reflection film of an optical disk medium such as a CD or DVD, which requires high reflectivity, and a reflection type STN. It can be advantageously used for light-reflective thin films such as liquid crystal displays and organic EL displays.
  • optical disc media such as CDs and DVDs, and reflective films used in reflective STN liquid crystal displays and organic EL displays, have high temperature, high humidity resistance and heat resistance under operating conditions. Required.
  • the high-temperature, high-humidity resistance and heat resistance are improved to some extent in Ag-In binary Ag-based alloys as compared to Ag. However, for next-generation large-capacity optical recording media, etc. Improvements in high-temperature, high-humidity resistance and heat resistance are required.
  • the thin film formed from the sputtering target material of the present invention satisfies this requirement, and is particularly useful as a reflective film for the next-generation large-capacity optical recording media.
  • the reflection film is formed from the sputtering target material composed of the Ag-based alloy of the present invention by a sputtering method known per se, for example, a radio frequency (RF) sputtering method, a direct current (DC) sputtering method. This can be performed by a sputtering method, a magnetron sputtering method, or the like.
  • a sputtering method known per se for example, a radio frequency (RF) sputtering method, a direct current (DC) sputtering method.
  • RF radio frequency
  • DC direct current
  • Example 11 ! 1 to 5 and Comparative Example 1 _ 1 to: I — 3
  • a predetermined metal element is added to Ag, heated and melted in a gas furnace at a temperature of about 150 ° C, then formed and processed in a mold, and a sputtering tool having the composition shown in Table 1 Get material was prepared.
  • a thin film having a thickness of about 150 nm and the same composition as shown in Table 1 was formed on a glass substrate by RF sputtering.
  • Rate of change (%) 100-(Reflectance after immersion / Reflectance before immersion X 100) Table 2
  • the reflective film When the reflective film is used for liquid crystal devices, organic EL, DVD, DVD-RW, DVD-RAM, etc., it may be exposed to a high temperature of 200 ° C or more depending on the use conditions. Exposure to ° C or higher may cause aggregation of the film and the like, resulting in white turbidity and reduced reflectance. Therefore, these applications require film stability to heat. In particular, when the wavelength of the laser used in an optical recording medium is 405 nm, heat resistance in a short wavelength region is required.
  • a sputtering target material having the composition shown in Table 3 below was prepared in the same manner as in the above-mentioned Example, and was prepared.
  • a thin film having a composition of about 15 Onm and having a composition shown in Table 3 below was formed on a glass substrate in the same manner as in the above example, and the thermal stability of the film was examined.
  • Example 3 when the measurement wavelength is 700 nm, the reflectance of each sample hardly changes before and after the heat treatment, but when the measurement wavelength is 400 nm, the thin films of Examples 2-1 to 2-4 are as follows. Compared to the thin films of Comparative Examples 2_1 and 2-2, the heat resistance is much improved.
  • the reflective film When a reflective film is used for a semi-transmissive / reflective electrode film such as a liquid crystal, the reflective film is required to have a pattern-junging property by wet etching for wiring.
  • a sputtering target material having the composition shown in Table 5 below was prepared in the same manner as in the above-mentioned Example.
  • a thin film having the composition shown in Table 5 below was formed in the same manner as in Example, and a pattern jung was performed by jet etching, and the characteristics were evaluated. Note that a mixed solution of phosphoric acid, nitric acid, acetic acid, and water was used for wet etching. The results are shown in Table 6 below.
  • Example 3- Good results were obtained with the thin films of Nos. 3 to 3, but in the thin film of Comparative Example 3-1 after etching, some of the residue remained undissolved and adhered to the substrate. The residue was ⁇ .

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un matériau pour cible de pulvérisation qui comprend un alliage à base d'argent que l'on prépare en ajoutant à l'argent une faible quantité spécifique d'indium et au moins un élément choisi dans le groupe constitué d'indium, de cuivre, de nickel et de cobalt et en alliant le mélange ainsi obtenu. Ce matériau de cible pour pulvérisation présente une réflectance élevée et une excellente résistance à la sulfuration.
PCT/JP2003/006455 2002-05-28 2003-05-23 Matériau pour cible de pulvérisation WO2003100112A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2003242423A AU2003242423A1 (en) 2002-05-28 2003-05-23 Sputtering target material
JP2004507551A JP4162652B2 (ja) 2002-05-28 2003-05-23 スパッタリングターゲット材

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002-153729 2002-05-28
JP2002153729 2002-05-28

Publications (1)

Publication Number Publication Date
WO2003100112A1 true WO2003100112A1 (fr) 2003-12-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2003/006455 WO2003100112A1 (fr) 2002-05-28 2003-05-23 Matériau pour cible de pulvérisation

Country Status (4)

Country Link
JP (1) JP4162652B2 (fr)
AU (1) AU2003242423A1 (fr)
TW (1) TWI283710B (fr)
WO (1) WO2003100112A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010131481A1 (fr) * 2009-05-14 2010-11-18 三菱マテリアル株式会社 Film d'électrode réfléchissant en alliage d'aluminium pour former la couche d'anode d'un élément el organique à émission vers le haut
WO2011043486A1 (fr) * 2009-10-06 2011-04-14 三菱マテリアル株式会社 Cible en alliage d'argent destinée à la formation de film d'électrode réfléchissant pour élément el organique, et procédé de fabrication de ladite cible
JP5522599B1 (ja) * 2012-12-21 2014-06-18 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット
WO2015156093A1 (fr) * 2014-04-09 2015-10-15 三菱マテリアル株式会社 FILM D'ALLIAGE D'Ag ET CIBLE DE PULVÉRISATION CATHODIQUE POUR LA FORMATION D'UN FILM D'ALLIAGE D'Ag

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115976478B (zh) * 2022-12-13 2023-11-28 江苏迪纳科精细材料股份有限公司 一种抗硫化银合金靶材及其制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06243509A (ja) * 1993-02-19 1994-09-02 Ricoh Co Ltd 光反射膜及び該膜を用いた光記録情報媒体
JPH09324264A (ja) * 1996-06-03 1997-12-16 Toppan Printing Co Ltd スパッタリングターゲット
JP2001035014A (ja) * 1999-07-19 2001-02-09 Ricoh Co Ltd 光情報記録媒体及びその製造方法並びにその製造に用いるスパッタ装置
JP2002129260A (ja) * 2000-10-31 2002-05-09 Furuya Kinzoku:Kk 薄膜形成用スパッタリングターゲット材、それを用いて形成されて成る薄膜及び光学記録媒体
JP2002332568A (ja) * 2001-05-09 2002-11-22 Ishifuku Metal Ind Co Ltd スパッタリングターゲット材
JP2003160859A (ja) * 2001-11-26 2003-06-06 Mitsubishi Materials Corp 光記録媒体の反射膜形成用銀合金スパッタリングターゲット

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06243509A (ja) * 1993-02-19 1994-09-02 Ricoh Co Ltd 光反射膜及び該膜を用いた光記録情報媒体
JPH09324264A (ja) * 1996-06-03 1997-12-16 Toppan Printing Co Ltd スパッタリングターゲット
JP2001035014A (ja) * 1999-07-19 2001-02-09 Ricoh Co Ltd 光情報記録媒体及びその製造方法並びにその製造に用いるスパッタ装置
JP2002129260A (ja) * 2000-10-31 2002-05-09 Furuya Kinzoku:Kk 薄膜形成用スパッタリングターゲット材、それを用いて形成されて成る薄膜及び光学記録媒体
JP2002332568A (ja) * 2001-05-09 2002-11-22 Ishifuku Metal Ind Co Ltd スパッタリングターゲット材
JP2003160859A (ja) * 2001-11-26 2003-06-06 Mitsubishi Materials Corp 光記録媒体の反射膜形成用銀合金スパッタリングターゲット

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010131481A1 (fr) * 2009-05-14 2010-11-18 三菱マテリアル株式会社 Film d'électrode réfléchissant en alliage d'aluminium pour former la couche d'anode d'un élément el organique à émission vers le haut
JP2010287565A (ja) * 2009-05-14 2010-12-24 Mitsubishi Materials Corp 上部発光型有機ＥＬ素子の陽極層を形成するＡｌ合金反射電極膜
CN102421931B (zh) * 2009-10-06 2013-10-30 三菱综合材料株式会社 有机el元件的反射电极膜形成用银合金靶和其制造方法
CN102421931A (zh) * 2009-10-06 2012-04-18 三菱综合材料株式会社 有机el元件的反射电极膜形成用银合金靶和其制造方法
US20120193589A1 (en) * 2009-10-06 2012-08-02 Mitsubishi Materials Corporation Silver alloy target for forming reflection electrode film for organic el element, and method for manufacturing the silver alloy target
TWI385263B (zh) * 2009-10-06 2013-02-11 Mitsubishi Materials Corp Silver alloy target for forming reflective electrode film for organic electroluminescent element and manufacturing method thereof
WO2011043486A1 (fr) * 2009-10-06 2011-04-14 三菱マテリアル株式会社 Cible en alliage d'argent destinée à la formation de film d'électrode réfléchissant pour élément el organique, et procédé de fabrication de ladite cible
US8821769B2 (en) 2009-10-06 2014-09-02 Mitsubishi Materials Corporation Silver alloy target for forming reflection electrode film for organic EL element, and method for manufacturing the silver alloy target
JP5522599B1 (ja) * 2012-12-21 2014-06-18 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット
WO2014097961A1 (fr) * 2012-12-21 2014-06-26 三菱マテリアル株式会社 CIBLE DE PULVÉRISATION EN ALLIAGE Ag-In
JP2014139339A (ja) * 2012-12-21 2014-07-31 Mitsubishi Materials Corp Ａｇ合金スパッタリングターゲット
WO2015156093A1 (fr) * 2014-04-09 2015-10-15 三菱マテリアル株式会社 FILM D'ALLIAGE D'Ag ET CIBLE DE PULVÉRISATION CATHODIQUE POUR LA FORMATION D'UN FILM D'ALLIAGE D'Ag
CN105793449A (zh) * 2014-04-09 2016-07-20 三菱综合材料株式会社 Ag合金膜及Ag合金膜形成用溅射靶
CN105793449B (zh) * 2014-04-09 2017-09-29 三菱综合材料株式会社 Ag合金膜及Ag合金膜形成用溅射靶

Also Published As

Publication number Publication date
TW200401835A (en) 2004-02-01
JPWO2003100112A1 (ja) 2005-09-22
JP4162652B2 (ja) 2008-10-08
TWI283710B (en) 2007-07-11
AU2003242423A1 (en) 2003-12-12

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