WO2010131481A1 - Film d'électrode réfléchissant en alliage d'aluminium pour former la couche d'anode d'un élément el organique à émission vers le haut - Google Patents

Film d'électrode réfléchissant en alliage d'aluminium pour former la couche d'anode d'un élément el organique à émission vers le haut Download PDF

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Publication number
WO2010131481A1
WO2010131481A1 PCT/JP2010/003272 JP2010003272W WO2010131481A1 WO 2010131481 A1 WO2010131481 A1 WO 2010131481A1 JP 2010003272 W JP2010003272 W JP 2010003272W WO 2010131481 A1 WO2010131481 A1 WO 2010131481A1
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Prior art keywords
reflective electrode
mass
electrode film
film
alloy
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PCT/JP2010/003272
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English (en)
Japanese (ja)
Inventor
小見山昌三
山口剛
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三菱マテリアル株式会社
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Application filed by 三菱マテリアル株式会社 filed Critical 三菱マテリアル株式会社
Priority to CN2010800207702A priority Critical patent/CN102422716A/zh
Priority to US13/319,835 priority patent/US20120058353A1/en
Publication of WO2010131481A1 publication Critical patent/WO2010131481A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C22C21/06—Alloys based on aluminium with magnesium as the next major constituent
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H05B33/24—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers of metallic reflective layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission

Definitions

  • the present invention relates to an Al alloy reflective electrode film for forming an anode layer of an upper light emitting organic EL element.
  • the organic EL element is a kind of light emitting element, and its principle of operation is explained as follows.
  • a voltage is applied between the anode and the cathode formed on both surfaces of the organic EL film, holes are injected from the anode and electrons are injected from the cathode into the organic EL film. Then, the injected holes and electrons are combined in the organic EL light emitting layer.
  • the light emitting material excited by the energy generated by the coupling emits light when returning from the excited state to the ground state.
  • An organic EL display using this organic EL element as a pixel has been put into practical use as a display device of a portable device such as a mobile phone. Since the organic EL display uses a self-luminous organic EL element, a backlight like a liquid crystal display is unnecessary. Furthermore, the organic EL display has features such as being thin and light, low power consumption, and high contrast ratio.
  • a bottom emission type that extracts light from the transparent substrate side such as glass
  • an upper emission type top emission type
  • a layer structure of the upper light-emitting organic EL element a structure in which an anode layer, an organic EL layer, an electron injection layer, and a cathode layer are laminated on a glass substrate surface in order from the substrate side is known.
  • the anode layer having this structure has a reflective electrode film and a hole injection film
  • the organic EL layer has a hole injection layer, a hole transport layer, and an organic light emitting layer.
  • the cathode layer is light transmissive.
  • the reflective electrode film as a conventional reflective electrode film, high-purity Al, Nd, Ta, Nb, Mo, W, Ti, Si, B, Ni A material made of an Al alloy containing 5 atomic% or less of one or more of them has been proposed.
  • the organic EL element is highly useful from the viewpoints of thin and light weight, low power consumption, high contrast ratio, and the like. However, in order to improve practicality, the organic EL element is required to have a long lifetime.
  • One cause of the deterioration of the organic EL element is generation of a non-light emitting point (dark spot) due to unevenness of the base film of the organic EL layer. More specifically, the convex portion of the organic EL layer is caused by the fact that the thickness of the organic EL layer is as thin as about 10 to 200 nm and the unevenness of the surface of the anode layer that is the base layer of the organic EL layer is large. The electric field is increased and the current is concentrated.
  • the anode layer of the upper light emitting organic EL element is usually composed of a reflective electrode film and a hole injection film (for example, ITO, AZO). Since the hole injection film is very thin, the surface shape of the hole injection film is cast using the surface shape of the reflective electrode film as a mold. Therefore, it is necessary to reduce the surface roughness of the reflective electrode film and the average surface roughness of the anode layer in order to extend the life of the organic EL element.
  • Patent Document 1 it is said that an upper light emitting organic EL element having high reflectivity and low resistance can be obtained by using a reflective electrode film using high purity Al or an Al alloy having a specific component composition as a material. Yes.
  • the reduction in the generation of non-emission points (dark spots) in the organic EL element is insufficient, and as a result, the organic EL element having the reflective electrode film based on Patent Document 1 has a short service life. There was a problem.
  • the Al alloy reflective electrode film constituting the anode layer of the top emission type organic EL device according to the first aspect of the present invention is composed of 0.5 to 15% by mass of Mg, La, Ce, Pr.
  • One or more of Nd, Eu, and Nd are contained in a total amount of 0.5 to 10% by mass, and the balance is composed of Al and inevitable impurities.
  • the Al alloy reflective electrode film constituting the anode layer of the top emission type organic EL device of the second aspect of the present invention is composed of 1 to 5% by mass of Mg, 1 to 3% by mass of Ce, and the balance from Al and inevitable impurities. It has the component composition which becomes.
  • the Al alloy reflective electrode film constituting the anode layer of the top emission type organic EL device of the third aspect of the present invention has Mg of 0.5 to 15% by mass, Ce of 0.5 to 10% by mass, Ni, Co Of these, one or two of them has a total amount of 2 to 9% by mass, and the balance has a composition of Al and inevitable impurities.
  • the Al alloy reflective electrode film constituting the anode layer of the top emission type organic EL device of the fourth aspect of the present invention has Mg of 0.5 to 15% by mass, Ce of 0.5 to 10% by mass, and Pd of 4 ⁇ 15% by mass, the balance having a component composition consisting of Al and inevitable impurities.
  • the average surface roughness of the electrode layer for the upper light emitting organic EL element is reduced, and the contact between the Al alloy reflective electrode film and the hole injection film such as ITO is further reduced. Resistance is also reduced.
  • production of a non-light-emission point can be suppressed, As a result, the lifetime of the top light emission type organic EL element which has this invention reflective electrode layer can be extended. Further, the reflectance and conductivity of the reflective electrode film are kept high by the Al alloy reflective electrode film provided by the present invention.
  • the Al alloy reflective electrode film constituting the anode layer of the top emission type organic EL device of the present invention will be described.
  • the material of the Al alloy reflective electrode film of the present invention is obtained by subjecting an Al alloy melting cast ingot or Al alloy powder pressure sintered body to plastic processing, heat treatment for recrystallization, and further machining. The resulting Al alloy is used.
  • the component composition of the Al alloy constituting the reflective electrode film of the present invention will be described.
  • Mg dissolves in Al and suppresses crystal grain growth when the reflective electrode film is formed. Thereby, the average surface roughness of the film surface is reduced, and the contact resistance between the reflective electrode film and the hole injection film such as ITO is also reduced.
  • the content is less than 0.5% by mass, the effect of reducing the average surface roughness and contact resistance is not sufficient.
  • the content exceeds 15% by mass, cracks are likely to occur in the Al alloy sputtering target used for film formation, which makes film formation difficult. Furthermore, the specific resistance of the obtained film itself increases, and it becomes impossible to form a highly conductive reflective electrode film.
  • the Mg content is preferably 0.5 to 15% by mass.
  • a more preferable Mg content is 1 to 5% by mass.
  • Any of the additive components composed of one or more of La, Ce, Pr, Nd, and Eu improves the corrosion resistance of the reflective electrode film. Therefore, the reflectance of the reflective electrode film can be kept high for a long time by adding the above components.
  • the additive component consisting of one or more of La, Ce, Pr, Nd, and Eu suppresses crystal grain growth by forming an intermetallic compound with Al at the crystal grain boundary, and the film This has the effect of further reducing the average surface roughness. Furthermore, by adding these components together with Mg, the contact resistance between the reflective electrode film and the hole injection film such as ITO is further reduced.
  • the total content of additive components composed of one or more of La, Ce, Pr, Nd, and Eu is less than 0.5% by mass, the corrosion resistance improving effect, the crystal grain growth inhibiting effect, and the contact resistance Reduction effect is insufficient.
  • the total content thereof exceeds 10% by mass the Al alloy sputtering target used for film formation tends to be cracked, which makes film formation difficult.
  • the reflectance of the film is lowered, and the specific resistance of the film itself tends to increase, thereby impairing high conductivity.
  • the total content of additive components composed of one or more of La, Ce, Pr, Nd, and Eu is preferably 0.5% by mass or more and 10% by mass or less.
  • addition of Ce is particularly effective in that the contact resistance between the reflective electrode film and the hole injection film such as ITO is further reduced.
  • the Mg content is set to 1 to 5 mass% and simultaneously adding 1 to 3 mass% of Ce, the contact resistance is greatly reduced, and extremely desirable characteristics as a reflective electrode film can be obtained.
  • Ce improves the corrosion resistance of the reflective electrode film as described above, the reflectance of the reflective electrode film can be kept high for a long period of time by adding Ce. Further, Ce forms an intermetallic compound with Al at the crystal grain boundary, so that crystal grain growth is suppressed. Thereby, the average surface roughness of the film is further reduced.
  • the addition of Ce further reduces the contact resistance between the reflective electrode film and the hole injection film such as ITO by coexistence with Mg.
  • the Ce content is less than 0.5% by mass, the above effects cannot be sufficiently exhibited.
  • the Ce content exceeds 8% by mass, the Al alloy sputtering target used for film formation tends to crack and film formation becomes difficult.
  • the Ce content exceeds 10% by mass, the reflectance of the film is remarkably lowered.
  • the Ce content is preferably 0.5 to 10% by mass.
  • a more preferable Ce content is 1 to 8% by mass.
  • One or two of Ni and Co are strongly bonded to Al atoms in the reflective electrode film to suppress Al diffusion and suppress coarsening of crystal grains on the surface of the reflective electrode film in a constant temperature and humidity test. . Therefore, the addition of one or two of Ni and Co reduces the surface roughness of the film and further improves the surface smoothness and the smoothness retention performance of the reflective electrode film. However, when the total content of one or two of Ni and Co is less than 2% by mass, the film surface smoothness retention ability is not sufficient.
  • the total content of one or two of Ni and Co exceeds 9% by mass, the reflectance of the reflective electrode film is remarkably lowered.
  • the total content of one or two of Ni and Co is determined to be 2 to 9% by mass.
  • the total content of one or two of Ni and Co is more preferably 3 to 8% by mass.
  • Pd is the same as in the case of Ni and Co described above.
  • the content is less than 4% by mass, the ability to maintain the smoothness of the film surface is not sufficient.
  • the Pd content exceeds 15% by mass, the reflectance of the reflective electrode film is remarkably lowered.
  • the Pd content is preferably 4 to 15% by mass.
  • a more preferable Pd content is 5 to 14% by mass.
  • a target for sputtering made of an Al alloy melting cast ingot is manufactured as follows.
  • Al is melted in a melting furnace, and after filling with an inert gas such as Ar, at least one of Mg, La, Ce, Pr, Nd, Eu, Ni, Co, and Pd is added to the molten Al. To do.
  • This is poured into a mold to produce an Al alloy melting cast ingot.
  • the melt cast ingot is heated at 380 to 450 ° C. for 1 to 3 hours and then hot rolled. More preferably, it is heated at 410 to 450 ° C. for 1 to 2 hours and then hot rolled.
  • a heat treatment for recrystallization is performed under the condition of holding at 450 to 550 ° C. for 1 to 3 hours, and finally machined to a desired size and used as a sputtering target. More preferably, recrystallization heat treatment is performed under conditions of holding at 480 to 520 ° C. for 1 to 2 hours, and machined.
  • the component composition of the Al alloy 0.5 to 15% by mass of Mg, one or more of La, Ce, Pr, Nd, and Eu in a total amount of 0.5 to 10% by mass, the balance being Component composition composed of Al and inevitable impurities, 0.5 to 15% by mass of Mg, 0.5 to 10% by mass of Ce, 2 to 9% by mass of one or two of Ni and Co in a total amount,
  • the balance is composed of Al and inevitable impurities, or Mg is 0.5 to 15 mass%, Ce is 0.5 to 10 mass%, Pd is 4 to 15 mass%, and the balance is Al and inevitable impurities. Is used.
  • the Al alloy reflective electrode film is formed by sputtering on the substrate under the normal conditions using the Al alloy as a target.
  • High purity Al having a purity of 99.99% by mass or more and Mg, La, Ce, Pr, Nd, Eu, Ni, Co, and Pd having a purity of 99.9% by mass or more were used as raw materials.
  • high purity Al having a purity of 99.99% by mass or more was melted in a vacuum in a high frequency vacuum melting furnace.
  • Ar gas was filled until the furnace pressure became atmospheric pressure, and the Mg, La, Ce, Pr, Nd, Eu, Ni, Co, and Pd were added to the Al molten metal. This was cast into a graphite mold to produce an Al alloy ingot. The obtained ingot was heated at 430 ° C.
  • Targets 1 to 20 having a dimension of 6 mm in thickness and having the component composition shown in Table 1 (hereinafter referred to as the present invention target) were produced.
  • Comparative Example Targets 1 to 10 whose additive alloy components are the same as those of the target of the present invention but whose content is outside the range of the present invention were manufactured under the same conditions as those for the target of the present invention. Furthermore, the purity of the conventional target 1 using high-purity Al of 99.99% by mass or more and the alloy components Nd, Ta, Nb, Mo, W, Ti, Si, B, disclosed in Patent Document 1 Conventional targets 2 to 10 containing any of Ni in a range of 5 atomic% or less were produced under the same conditions as the production conditions of the target of the present invention. Table 2 shows the composition of the components of Comparative Examples Targets 1 to 10 and Conventional Examples Targets 1 to 10.
  • each was soldered to a backing plate made of oxygen-free copper, and this was attached to a DC magnetron sputtering apparatus.
  • the inside of the DC magnetron sputtering apparatus is evacuated to 5 ⁇ 10 ⁇ 5 Pa with a vacuum exhaust apparatus, Ar gas is introduced to a sputtering gas pressure of 0.5 Pa, and then 100 W DC is applied to the target with a DC power supply. Sputter power was applied.
  • the reflective electrode films 1 to 20 of the present invention By generating plasma, the reflective electrode films 1 to 20 of the present invention, the comparative reflective electrode films 1 to 10 and the conventional reflective electrode films 1 to 10 having a thickness of 100 nm were produced.
  • the component composition of each reflective electrode film thus produced was investigated using an ICP-AES method (inductively coupled plasma analysis method). As a result, in any case, it was confirmed that a reflective electrode film having substantially the same component composition as that of each target shown in Table 1 or Table 2 was produced.
  • the reflection electrode films 1 to 20 of the present invention having a thickness of 100 nm, the reflection electrode films 1 to 10 of the comparative example, and the reflection electrode films 1 to 10 of the conventional example having the thicknesses of 100 nm are as follows. , (C), (d), (e), and (f) were measured and tested. Moreover, the measurement sample of (d) was produced in another procedure.
  • an ITO film having a width of 1 mm, a length of 30 mm, and a thickness of 200 nm is formed on the glass substrate by sputtering under conditions where the substrate temperature is 250 ° C., the Ar gas pressure is 0.5 Pa, and the input power is DC 150 W.
  • the substrate temperature is 250 ° C.
  • the Ar gas pressure is 0.5 Pa
  • the input power is DC 150 W.
  • a stainless steel mask sheet in which nine slits having a width of 1 mm and a length of 10 mm are arranged at intervals of 2 mm is prepared, and a glass substrate with an ITO film is arranged so that the longitudinal direction of the slits is orthogonal to the longitudinal direction of the ITO film
  • An Al alloy film having a thickness of 300 nm is formed by using a target of the present invention 1 to 20, a comparative example target 1 to 10 and a conventional example target 1 to 10 in order by superimposing a stainless steel mask on a substrate holder.
  • a film was formed on the ITO film.
  • the laminated film of the Al alloy and ITO thus produced was subjected to a heat treatment for 30 minutes at 250 ° C.
  • (E) Corrosion resistance test The reflective electrode films 1 to 20 of the present invention, the reflective electrode films 1 to 10 of the comparative example, and the reflective electrode films 1 to 10 of the conventional example are each placed in a constant temperature and humidity chamber having a temperature of 80 ° C. and a relative humidity of 85%. The sample was taken out after being held for 100 hours, and the reflectance was measured using an ultraviolet-visible spectrophotometer V-550 manufactured by JASCO Corporation. Tables 3 and 4 show the reflectance at a wavelength of 550 nm.
  • the reflective electrode films 1 to 20 of the present invention, the comparative reflective electrode films 1 to 10 and the conventional reflective electrode films 1 to 10 were kept at a constant temperature of 80 ° C. and a relative humidity of 85%, respectively.
  • the film was taken out after being held in a humidity chamber for 100 hours, and the average surface roughness of the film after holding the temperature and humidity test was measured in an area of 1 ⁇ m ⁇ 1 ⁇ m using an atomic force microscope SPA-400 manufactured by Seiko Instruments Inc. .
  • the average surface roughness values are shown in Table 3 and Table 4, respectively.
  • the reflective electrode films 1 to 20 of the present invention have an initial reflectance, a specific resistance value, and corrosion resistance as compared with the comparative reflective electrode films 1 to 10 or the conventional reflective electrode films 1 to 10. Indicates that there is no significant difference.
  • the reflective electrode films 1 to 20 of the present invention have a lower average surface roughness than the reflective electrode films 1 to 10 of the comparative examples or the reflective electrode films 1 to 10 of the conventional example, and further, It is also shown that the contact resistance is low. Therefore, by the reflective electrode film of the present invention, it is possible to suppress the occurrence of non-light emitting points (dark spots) while providing various characteristics required as a reflective electrode film. As a result, the lifetime of the top emission organic EL element having the reflective electrode film of the present invention is longer than that of the conventional one having the reflective electrode film.
  • High purity Al having a purity of 99.99% by mass or more and Mg, Ce, Ni, Co, Pd having a purity of 99.9% by mass or more were used as raw materials.
  • high purity Al having a purity of 99.99% by mass or more was melted in a vacuum in a high frequency vacuum melting furnace.
  • Ar gas was filled until the furnace pressure became atmospheric pressure, and the Mg, Ce, Ni, Co, and Pd were added to the molten Al. This was cast into a graphite mold to produce an Al alloy ingot. The obtained ingot was heated at 550 ° C.
  • Targets 21 to 36 having a thickness of 6 mm and having the composition shown in Table 5 (hereinafter referred to as the present invention target) 21 to 36 were produced.
  • Comparative Example Targets 11 to 20 whose additive alloy components are the same as those of the target of the present invention but whose content is outside the range of the present invention were manufactured under the same conditions as the manufacturing conditions of the target of the present invention.
  • Comparative Examples Targets 12 and 14 cracks were generated during hot rolling, but they were used as they were for the purpose of preparing an evaluation sample of the film.
  • Table 6 shows the component compositions of the comparative targets 11 to 20.
  • each was soldered to a backing plate made of oxygen-free copper, and this was attached to a DC magnetron sputtering apparatus.
  • the inside of the DC magnetron sputtering apparatus is evacuated to 5 ⁇ 10 ⁇ 5 Pa with a vacuum exhaust apparatus, Ar gas is introduced to a sputtering gas pressure of 0.5 Pa, and then 100 W DC is applied to the target with a DC power supply. Sputter power was applied.
  • inventive reflective electrode films 21 to 36 and comparative reflective electrode films 11 to 20 having a thickness of 100 nm were produced.
  • the component composition of each reflective electrode film thus produced was investigated using an ICP-AES method (inductively coupled plasma analysis method). In any case, it was confirmed that a reflective electrode film having substantially the same component composition as the component composition of each target shown in Table 5 or Table 6 was produced.
  • the reflective electrode films 21 to 36 of the present invention and the comparative reflective electrode films 11 to 20 of the present invention having a thickness of 100 nm thus produced were subjected to the following (a), (b) in the same manner as in Example 1. ), (C), (d), (e), and (f) were measured and tested. Further, as in the case of Example 1, the measurement sample of (d) was produced by a different procedure.
  • (A) Initial reflectance test of Al alloy reflective electrode film (b) Specific resistance measurement (c) Average surface roughness measurement (d) Contact resistivity measurement (e) Corrosion resistance test (f) Evaluation of smoothness retention performance
  • the measured values and test results of a) to (f) are shown in Table 7 and Table 8, respectively.
  • the reflective electrode films 21 to 36 of the present invention have a slightly lower initial reflectance and a slightly higher specific resistance than the conventional reflective electrode films 1 to 10, but they are Is shown to have sufficient properties.
  • the reflective electrode films 21 to 36 of the present invention have a lower average surface roughness and a lower contact resistance with the hole injection film than the conventional reflective electrode films 1 to 10, and further maintain flatness. The performance is shown to be even better.
  • the reflective electrode films 21 to 36 of the present invention are any of the initial reflectance, specific resistance value, average surface roughness, low contact efficiency, and flatness maintaining performance. It is shown that it is excellent in terms.
  • the reflective electrode films 21 to 36 of the present invention can suppress the generation of non-light emitting points (dark spots) while having various characteristics required as a reflective electrode film.
  • the lifetime of the top emission organic EL element having the reflective electrode film of the present invention is longer than that of the conventional one having the reflective electrode film.
  • the Al alloy reflective electrode film forming the anode layer of the upper light emitting organic EL device of the present invention has high reflectivity, low specific resistance (high conductivity), corrosion resistance, low average surface roughness, and low contact. Because of its resistance, it can be expected to have a longer lifetime, and it can be used in a wide range of reflective films used in optical recording media such as CDs and DVDs, reflective STN liquid crystal display devices, and reflective conductive films in organic EL display devices. Applicable.

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Abstract

L'invention concerne un film d'électrode réfléchissant en alliage d'Al constituant une couche d'anode pour un élément EL organique à émission vers le haut, possédant une réflectivité élevée et une conductivité électrique élevée, et présentant également une faible rugosité de surface moyenne et une faible résistance de contact. L'invention concerne en particulier un film d'électrode réfléchissant destiné à former une couche d'anode pour un élément EL organique à émission vers le haut qui comprend un alliage d'Al comprenant du Mg dans une quantité de 0,5 à 15 % en masse et un ou plusieurs éléments choisis parmi La, Ce, Pr, Nd et Eu dans la quantité totale de 0,5 à 10 % en masse, le reste étant de l'Al et des impuretés inévitables ou un alliage d'Al comprenant du Mg dans une quantité de 0,5 à 15 % en masse et du Ce dans une quantité de 0,5 à 10 % en masse, et comprend en outre un ou plusieurs éléments choisis parmi le Ni et le Co dans la quantité totale de 2 à 9 % en masse ou le Pd dans une quantité de 4 à 15 % en masse, le reste étant de l'Al et des impuretés inévitables. Le film d'électrode réfléchissant présente une réflectivité élevée, une conductivité électrique élevée, une faible rugosité de surface moyenne et une faible résistance de contact avec un film d'électrode d'injection de trous tel que ITO et AZO.
PCT/JP2010/003272 2009-05-14 2010-05-14 Film d'électrode réfléchissant en alliage d'aluminium pour former la couche d'anode d'un élément el organique à émission vers le haut WO2010131481A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2010800207702A CN102422716A (zh) 2009-05-14 2010-05-14 形成上部发光型有机EL元件的阳极层的Al合金反射电极膜
US13/319,835 US20120058353A1 (en) 2009-05-14 2010-05-14 Al ALLOY REFLECTIVE ELECTRODE FILM FOR FORMING ANODE LAYER FOR TOP-EMITTING ORGANIC EL ELEMENT

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2009-117184 2009-05-14
JP2009117184 2009-05-14
JP2010102905A JP2010287565A (ja) 2009-05-14 2010-04-28 上部発光型有機ＥＬ素子の陽極層を形成するＡｌ合金反射電極膜
JP2010-102905 2010-04-28

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KR (1) KR20120027121A (fr)
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CN105810842B (zh) * 2014-12-29 2019-01-11 昆山国显光电有限公司 有机发光二极管的阳极结构

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002077317A1 (fr) * 2001-03-16 2002-10-03 Ishifuku Metal Industry Co., Ltd. Materiau de cible de pulverisation
WO2003100112A1 (fr) * 2002-05-28 2003-12-04 Ishifuku Metal Industry Co., Ltd. Matériau pour cible de pulvérisation
JP2005056848A (ja) * 2003-08-05 2005-03-03 Lg Electron Inc 有機ｅｌ素子
JP2007066417A (ja) * 2005-08-31 2007-03-15 Mitsubishi Materials Corp 耐食性および表面平滑性に優れた光記録媒体用アルミニウム合金反射膜およびこの反射膜を形成するためのスパッタリングターゲット
JP2007070721A (ja) * 2005-03-10 2007-03-22 Mitsubishi Materials Corp 耐腐食性に優れた反射板用反射膜およびこの耐腐食性に優れた反射板用反射膜を形成するためのスパッタリングターゲット
JP2008270170A (ja) * 2007-04-23 2008-11-06 Samsung Sdi Co Ltd 有機発光素子及びその製造方法
JP2009021020A (ja) * 2007-07-10 2009-01-29 Mitsubishi Materials Corp 耐腐食性に優れたリフレクタを有する車両用灯具

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3427539B2 (ja) * 1995-02-13 2003-07-22 松下電器産業株式会社 有機薄膜エレクトロルミネッセンス素子
JPH10321374A (ja) * 1997-05-20 1998-12-04 Tdk Corp 有機ｅｌ素子
JP2003027158A (ja) * 2001-07-16 2003-01-29 Sumitomo Metal Mining Co Ltd 光記録ディスク反射膜形成用金合金
JP2003030901A (ja) * 2001-07-16 2003-01-31 Sumitomo Metal Mining Co Ltd 光記録ディスク反射膜形成用アルミニウム合金
US20050164019A1 (en) * 2004-01-22 2005-07-28 General Electric Company Charge transfer-promoting materials and electronic devices incorporating same
JP2007072427A (ja) * 2005-03-10 2007-03-22 Mitsubishi Materials Corp 耐腐食性に優れた反射板用反射膜およびこの耐腐食性に優れた反射板用反射膜を形成するためのスパッタリングターゲット
JP4556768B2 (ja) * 2005-05-26 2010-10-06 三菱電機株式会社 有機電界発光型表示装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002077317A1 (fr) * 2001-03-16 2002-10-03 Ishifuku Metal Industry Co., Ltd. Materiau de cible de pulverisation
WO2003100112A1 (fr) * 2002-05-28 2003-12-04 Ishifuku Metal Industry Co., Ltd. Matériau pour cible de pulvérisation
JP2005056848A (ja) * 2003-08-05 2005-03-03 Lg Electron Inc 有機ｅｌ素子
JP2007070721A (ja) * 2005-03-10 2007-03-22 Mitsubishi Materials Corp 耐腐食性に優れた反射板用反射膜およびこの耐腐食性に優れた反射板用反射膜を形成するためのスパッタリングターゲット
JP2007066417A (ja) * 2005-08-31 2007-03-15 Mitsubishi Materials Corp 耐食性および表面平滑性に優れた光記録媒体用アルミニウム合金反射膜およびこの反射膜を形成するためのスパッタリングターゲット
JP2008270170A (ja) * 2007-04-23 2008-11-06 Samsung Sdi Co Ltd 有機発光素子及びその製造方法
JP2009021020A (ja) * 2007-07-10 2009-01-29 Mitsubishi Materials Corp 耐腐食性に優れたリフレクタを有する車両用灯具

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