1283710 玖、發明說明： 【發明所屬之技術領域】 本發明係關於維持高反射率的同時增強耐蝕性、特別 是耐硫化性之薄膜形成用濺鍍靶材，及使用此濺鍍靶材形 成的薄膜。 【先前技術】 CD ( Compact Disc) 、 DVD (Digital Versatile Disc )等光學記錄介質中使用的反射膜或反射型3了1^(31^以 T w i s t N e m a t i c )液晶顯示裝置、有機EL ( E 1 e c t r 〇 1 unn nes cence )顯示裝置等使用的光反射性導電膜中，通常 使用鋁或鋁合金。 上述的光學記錄介質或液晶顯示裝置、有機EL顯示裝 置等用途使用的光反射性薄膜的製法，通常製作具期望性 質的濺鍍靶材’利用RF (高周波）濺鍍法或DC (直流）濺 鍍法等使此濺鍍靶材成膜而製造。 以上述的方法製造由鋁或鋁合金組成的薄膜具有某種 程度的的反射率且電阻低，爲要在表層形成鈍態皮膜，在 空氣中亦具有安定的耐蝕性，鋁或鋁合金組成的薄膜的反 射率在波長爲700ηηι的光時約爲80% ，對要求高反射率白勺 用途則無法滿足需求。 因此，需求具有高反射率的薄膜例如以CD或DVD爲Θ 表的光碟片介質，提議使用金或銀形成薄膜取代銘或銘$ 金作爲濺鍍靶材，又，亦提議使用高反射率的銀作爲s躬-型STN液晶顯示裝置的薄膜材料。 惟，金係商價，而銀和銘相較，銀有耐触性特別是而寸 1283710 氧化性、耐硫化性等問題。例如銀和硫反應後生成銀的硫 化物並黑色化而降低反射率。 因此，例如特開平7 - 3 3 6 3號公報中提議在銀中添加少 量的鎂使合金化，藉此提昇耐蝕性。 惟，即使進行銀的合金化亦無法具有充分的耐蝕性。 又，次世代大容量光記錄介質爲要增加記憶容量需使 用40 5 nm般短波長的雷射光，如此條件下需耐蝕性、耐熱 性。 本發明的主要目的係提供一種可維持高反射率，且改 善耐蝕性特別是耐硫化性的由銀合金組成薄膜形成用之濺 鍍靶材。 【發明內容】 根據本發明者們的硏究結果，發現在銀中添加特定少 量的銦和至少一種選自銅、鎳及鈷進行合金化後，銀持續 維持高反射率，銀基合金可更提昇耐鈾性特別是耐硫化性 及耐熱性，相對於此銀基合金成分，再添加至少一種選自 少量的其他金屬成分如金、鉑及鈀進行合金化後可更提昇 耐蝕性特別是耐硫化性，而完成本發明。 如此，本發明係提供由銀中含有〇 · 〇 1〜5 . 0質量％銦和 至少一種選自0 · 0 1〜5 · 0質量!ίέ銅、鎳及鈷形成的銀合金所 組成具高反射率之高耐蝕性薄膜形成用濺鍍靶材。 又，本發明亦提供由銀中含有0 . 01〜5 · 0質量!銦和至 少一種選自0 . 〇 1〜5 . 0質量％銅、鎳及銘，和至少一種選自 小於0 · 0 1〜〇 . 1質量％金、鈀及鉑形成的銀合金所組成具高 反射率之高耐蝕性薄膜形成用濺鍍靶材。 1283710 本發明亦提供由銀中含有〇 . 0 1〜5 . 0質量％銦和至少一 種選自0 · 0 1〜5 · 0質量％銅、鎳及鈷形成的銀合金所組成之 薄膜。 又，本發明亦提供由銀中含有0 · 0 1〜5 . 0質量％銦和至 少一種選自0 · 0 1〜5 . 0質量％銅、鎳及鈷，和至少一種選自 小於0 . 0 1〜0 · 1質量％金、鈀及鉑形成的銀合金所組成之薄 膜。 以下，更詳細地說明本發明。 【實施方式】 本發明的濺鍍靶材的一個樣態，即以銀爲基本，於其 中添加銦和至，少一種選自銅、鎳及鈷，合金化形成銀合金 而組成者。 相對於銀上述銦的添加量爲0 . 0 1〜5 . 0質量％ ，較理想 爲〇 . 1〜1 . 5質量!ίέ的範圍內。又，相對於銀至少一種選自 銅、鎳及鈷金屬成分的添加量合計爲0 . 0 1〜5 . 0質量％ ，較 理想爲0 . 1〜1 . 5質量％的範圍內。 本發明的濺鍍靶材的其他樣態，即以銀爲基本，於其 中添加銦和至少一種選自銅、鎳及鈷的金屬成分，及再添 加至少一種選自金、鈀及鉑的其他金屬成分，合金化形成 銀合金而組成者。 在後者樣態的銀合金中，相對於銀，銦的添加量爲 〇 · 〇 1〜5 . 0質量％ ，較理想爲Q . 1〜1 . 5質量％的範圍內。相 對於銀至少一種選自銅、鎳及鈷金屬成分的添加量合計爲 〇.〇丨〜5 . 0質量％ ，較理想爲0 · 1〜1 . 5質量％的範圍內。又 ’相對於銀至少一種選自金、鈀及鉑其他金屬成分的添加 1283710 量合計爲0 . 0 1〜0 · 1質量％ ，較理想爲0 · 〇 2〜0 . 0 8質量％的 範圍內。 銀合金的製法，例如相對於銀，以上述的量添加銦和 至少一種選自銅、鎳及鈷金屬成分，或相對於銀，以上述 的量添加銦和至少一種選自銅、鎳及鈷金屬成分和至少一 種選自金、鈀及鉑其他金屬成分’於煤氣爐、高周波溶解 爐等適當的金屬溶解爐內約1 000〜1 200 °c的溫度下溶解而 製造。可於空氣中進行溶解即可，亦可依需求使用惰性氣 體或真空。 作爲原料使用的至少一種選自銀；銦；銅、鎳及鈷的 金屬成分及至少一種選自金、鈀及鉑的其他金屬成分，可 使用粒狀、板狀、塊狀等型態的市售品，惟純度大於 9 9 . 9 %者較適合，特別以大於9 9 · 9 5 %者更理想。 如此，以上述的比例可製得銀中含有銦和至少一種選 自銅、鎳及鈷金屬成分，或銦和至少一種選自銅、鎳及鈷 金屬成分和至少一種選自金、鈀及鉑其他金屬成分之銀合 金。由此銀合金組成的濺鍍靶材，銀維持原有的高反射率 ，且耐氧化性、耐硫化性等耐蝕性亦較銀或銀-鎂合金更理 想。 因此，本發明的由上述銀合金組成的濺鍍靶材，可應 用於需求高反射率以CD和DVD爲代表的光碟片介質的反射 膜，以及，反射型STN液晶顯示裝置和有機EL顯示裝置等 光反射性薄膜。 又，相對於以CD和DVD爲代表的光碟片介質及反射型 STN液晶顯示和有機EL顯示裝置中使用的反射膜，除了耐 1283710 蝕性外亦需求在使用條件下的耐高溫高濕性和耐熱性。 銀-銦二元銀合金的耐高溫高濕性及耐熱性較銀的耐 高溫高濕性及耐熱性更佳，惟相對於次世代大容量光記錄 介質等需求更理想的耐高溫高濕性及耐熱性。由本發明的 濺鍍靶材形成的薄膜可滿足此需求，作爲次世代大容量光 記錄介質用的反射膜特別有助益。 由本發明的銀合金組成的濺鍍靶材所形成的反射膜， 其形成方法可採用已知的濺鍍法例如高周波（RF )濺鍍法 、直流（DC )濺鍍法、磁控管濺鍍法等。 以下’以實例更具體地說明本發明，惟本發明的範圍 不受這些實例限制。 【實例】 實例1 - 1〜1 - 5及比較例1 - 1〜1- 3 在銀中添加規定的金屬元素，在煤氣爐內加熱至約 1 0 5 0 °C的溫度溶解後在鑄型中進行鑄造、加工，製作如表1 所示組成之濺鍍靶材。 採用RF濺鍍法使此濺鍍靶材在玻璃基板上形成厚度約 1 5 Onm和表1所示組成相同之薄膜。 1283710 表1 試料No. 組成 1-1 銀- 0.5質星％姻-0.2質重％銅 1-2 銀-0.8質量％銦-0.8質量％銅 實施例 1-3 銀- 0.8質量％銦- 0.5質量％鎮 1-4 銀-0.5質量％銦-0.5質量％鈷 1-5 銀- 0,8質量％銦- 0.5質量％銅- 0.05質量％鈀 1-1 銀 比較例 1-2 銀-1質量％金 1-3 銀-1質量％鎂BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering target for forming a film which maintains high reflectance while enhancing corrosion resistance, particularly sulfur resistance, and is formed using the sputtering target. film. [Prior Art] A reflective film or a reflective type used in an optical recording medium such as a CD (Compact Disc) or a DVD (Digital Versatile Disc), a liquid crystal display device, and an organic EL (E 1 ) Ectr 〇1 unn nes cence ) In the light-reflective conductive film used for a display device or the like, aluminum or an aluminum alloy is usually used. In the above-described method of producing a light-reflective film for use in an optical recording medium, a liquid crystal display device, or an organic EL display device, a sputtering target having a desired property is usually produced by RF (high-frequency) sputtering or DC (direct current) sputtering. The sputtering target is produced by forming a sputtering target. The film made of aluminum or aluminum alloy by the above method has a certain degree of reflectivity and low electrical resistance, in order to form a passive film on the surface layer, and also has stable corrosion resistance in air, composed of aluminum or aluminum alloy. The reflectance of the film is about 80% at a wavelength of 700 ηηι, which is not satisfactory for applications requiring high reflectance. Therefore, there is a demand for a film having a high reflectance such as a CD or a DVD as a disk medium, and it is proposed to use gold or silver to form a film instead of inscription or gold as a sputtering target, and it is also proposed to use a high reflectance. Silver is used as a film material for a s-type STN liquid crystal display device. However, the price of gold is the same as that of silver and silver. The silver has the resistance to touch, especially the oxidizing and sulphur resistance of the 1283710. For example, silver reacts with sulfur to form silver sulfide and blackens to reduce reflectance. For this reason, for example, it is proposed to add a small amount of magnesium to silver to alloy the silver, for example, to increase the corrosion resistance. However, even if alloying of silver is performed, sufficient corrosion resistance cannot be obtained. Further, in the next generation of large-capacity optical recording media, it is necessary to use laser light having a short wavelength of 40 5 nm in order to increase the memory capacity, and corrosion resistance and heat resistance are required under such conditions. SUMMARY OF THE INVENTION A primary object of the present invention is to provide a sputtering target for forming a film composed of a silver alloy which can maintain high reflectance and which is excellent in corrosion resistance, particularly sulfur resistance. SUMMARY OF THE INVENTION According to the results of the present inventors, it has been found that silver is continuously maintained at a high reflectance after the addition of a specific small amount of indium and at least one selected from the group consisting of copper, nickel and cobalt, and the silver-based alloy can be further improved. Improve uranium resistance, especially sulphide resistance and heat resistance. Compared with this silver-based alloy component, at least one other metal component selected from a small amount such as gold, platinum and palladium can be alloyed to improve corrosion resistance, especially resistance. The present invention is completed by vulcanization. Thus, the present invention provides a silver alloy comprising yttrium yttrium yttrium yttrium yttrium yttrium yttrium yttrium yttrium yttrium yttrium yttrium yttrium yttrium yttrium yttrium yttrium yttrium yttrium yttrium yttrium yttrium A sputtering target for forming a high-reflectance film with high reflectance. Further, the present invention also provides that the silver contains 0.01 to 5 · 0 mass! Indium and at least one selected from the group consisting of 0. 〇1 to 5.0% by mass of copper, nickel and inscription, and at least one selected from less than 0 · 0 1 to 〇. A silver alloy formed of 1% by mass of gold, palladium or platinum is used as a sputtering target having a high reflectance and high corrosion resistance film formation. 1283710 The present invention also provides a film composed of a silver alloy containing 〇. 0 1 to 5.0% by mass of silver and at least one selected from the group consisting of 0, 0 1 to 5 % by mass of copper, nickel and cobalt. Further, the present invention also provides that the silver contains 0. 0 1 to 5.0% by mass of indium and at least one selected from the group consisting of 0. 0 1 to 5.0% by mass of copper, nickel and cobalt, and at least one selected from less than 0. 0 1 to 0 · A film composed of a silver alloy of 1% by mass of gold, palladium and platinum. Hereinafter, the present invention will be described in more detail. [Embodiment] One aspect of the sputtering target of the present invention, that is, silver-based, in which indium and up are added, and one less is selected from the group consisting of copper, nickel, and cobalt, and alloyed to form a silver alloy. The amount of the above indium added to the silver is 0. 0 1 to 5. 0% by mass, more preferably 〇. 1 to 1. 5 mass! Further, the amount of addition of at least one selected from the group consisting of copper, nickel and cobalt metal components is from 0. 1 to 5% by mass, more preferably from 0.1 to 1.5% by mass. Other aspects of the sputtering target of the present invention, that is, silver-based, in which indium and at least one metal component selected from the group consisting of copper, nickel, and cobalt are added, and at least one other selected from the group consisting of gold, palladium, and platinum is further added. The metal component is alloyed to form a silver alloy. In the silver alloy of the latter aspect, the amount of indium added is 〇· 〇 1 to 5.0% by mass relative to the silver, and is preferably in the range of Q. 1 to 1. 5 mass%. The amount of addition of at least one metal selected from the group consisting of copper, nickel and cobalt is preferably 〇.〇丨~5. 0% by mass, more preferably 0. 1 to 1.5% by mass. Further, the total amount of 1283710 added to at least one metal selected from the group consisting of gold, palladium and platinum is 0. 0 1~0 · 1 mass%, more preferably 0 · 〇2~0. 0 8 mass% range Inside. a method of preparing a silver alloy, for example, adding indium and at least one metal component selected from the group consisting of copper, nickel, and cobalt with respect to silver, or adding indium and at least one selected from the group consisting of copper, nickel, and cobalt in an amount described above with respect to silver. The metal component and at least one metal component selected from the group consisting of gold, palladium, and platinum are dissolved in a suitable metal melting furnace such as a gas furnace or a high-frequency melting furnace at a temperature of about 1,000 to 1,200 ° C. It can be dissolved in air, or an inert gas or vacuum can be used as needed. As the raw material, at least one selected from the group consisting of silver, indium, a metal component of copper, nickel, and cobalt, and at least one other metal component selected from the group consisting of gold, palladium, and platinum, may be used in the form of a granular, plate, or block type. Sales, but the purity is more than 9 9 . 9 % is more suitable, especially more than 9 9 · 9 5 % is more ideal. Thus, in the above ratio, silver may be contained and at least one metal component selected from the group consisting of copper, nickel and cobalt, or indium and at least one selected from the group consisting of copper, nickel and cobalt metal components and at least one selected from the group consisting of gold, palladium and platinum Silver alloy of other metal components. The sputtering target composed of the silver alloy maintains the original high reflectance of silver, and the corrosion resistance such as oxidation resistance and sulfur resistance is more desirable than silver or silver-magnesium alloy. Therefore, the sputtering target composed of the above-described silver alloy of the present invention can be applied to a reflective film of an optical disk medium which is required to have high reflectance and is represented by CD and DVD, and a reflective STN liquid crystal display device and an organic EL display device. A light reflective film. Further, with respect to the optical disk medium represented by CD and DVD, and the reflective film used in the reflective STN liquid crystal display and the organic EL display device, in addition to resistance to 1283710, it also requires high temperature and high humidity under the use conditions. Heat resistance. The high-temperature, high-humidity and heat-resistance of silver-indium binary silver alloy is better than the high temperature, high humidity and heat resistance of silver, but it is more desirable than the next-generation large-capacity optical recording medium. And heat resistance. The film formed by the sputtering target of the present invention satisfies this need, and is particularly advantageous as a reflection film for the next generation large-capacity optical recording medium. The reflective film formed by the sputtering target composed of the silver alloy of the present invention can be formed by a known sputtering method such as high frequency (RF) sputtering, direct current (DC) sputtering, magnetron sputtering. Law and so on. The invention is more specifically described by the following examples, but the scope of the invention is not limited by the examples. [Examples] Examples 1 - 1 to 1 - 5 and Comparative Examples 1 - 1 to 1 - 3 A predetermined metal element was added to silver and heated in a gas furnace to a temperature of about 10.5 ° C. Casting and processing were carried out, and a sputtering target having the composition shown in Table 1 was produced. The sputter target was formed on the glass substrate by RF sputtering to a film having a thickness of about 15 Onm and having the same composition as shown in Table 1. 1283710 Table 1 Sample No. Composition 1-1 Silver - 0.5 Quality Star % - 0.2% by Weight Copper 1-2 Silver - 0.8% by mass Indium - 0.8% by mass Copper Example 1-3 Silver - 0.8% by mass Indium - 0.5 Mass % Town 1-4 Silver - 0.5% by mass Indium - 0.5% by mass Cobalt 1-5 Silver - 0, 8 % by mass Indium - 0.5% by mass Copper - 0.05% by mass Palladium 1-1 Silver Comparative Example 1-2 Silver-1 Quality% Gold 1-3 Silver-1% by mass Magnesium
測定已形成的薄膜之反射率後，將基板浸漬於0 . 01 % 硫化鈉（Na2S )水溶液中1小時，再度測定其反射率，根據 下式算出浸漬前後的反射率之變化率。其結果如表2所示 變化率（％ )= 100—(浸漬後的反射率/浸漬前的反After the reflectance of the formed film was measured, the substrate was immersed in an aqueous solution of 0.01% sodium sulfide (Na2S) for 1 hour, and the reflectance was measured again, and the rate of change of the reflectance before and after the immersion was calculated according to the following formula. The results are shown in Table 2. Rate of change (%) = 100 - (reflectivity after immersion / reaction before immersion)
射率X 1 〇 〇 ) 試料No. 變化率％ 測定波長400nm 測定波長700nm 實施例 1-1 40 16 1 >2 40 15 1-3 39 16 1-4 41 16 1-5 35 14 比較例 1 -1 61 38 1-2 60 35 1-3 68 37 從表2可淸楚得知，實例1 - 1〜1 - 5的薄膜的反射率之變 -10- 1283710 化，較比較例1 - 1〜1 - 3的薄膜少許多，表示其耐蝕性較佳 實例2 - 1〜2-4及比較例2 - 1〜2-2 反射膜使用於液晶相關和有機EL、DVD、DVD-RW和 DVD-RAM等時，依使用條件有時需曝露於200 °C以上的高溫 ，例如純銀的薄膜曝露於200°C以上的高溫後，會發生膜的 凝集等產生白濁現象使反射率下降。因此，這些用途方面 需求膜對熱具有安定性。特別是光記錄介質中使用的雷射 的波長爲405nm時，需要短波長領域的耐熱性。 爲要測定由本發明的濺鍍靶材形成的薄膜的熱安定性 ’以和上述實例相同的做法製作下述表3所示組成的濺鍍 靶材’以和上述實例相同的做法使此濺鍍靶材在玻璃基板 上形成厚度約1 5 Onm的表3所示組成之薄膜，並測定膜的 熱安定性。 表3 試料N 〇 . 組成 實施例 2-1 銀-0.5質量％銦-0.2質量％銅 2-2 銀-1.0質量％銦-0.7質量％銅 2-3 銀-0.6質量％銦-0.4質量％鎳 2-4 銀-0.8質量％銦-0.5質量％鈷-0.05質量％鈀 比較例 2-1 銀 2-2 銀-1 . 〇質量％銦Rate X 1 〇〇) Sample No. Rate of change % Measurement wavelength 400 nm Measurement wavelength 700 nm Example 1-1 40 16 1 > 2 40 15 1-3 39 16 1-4 41 16 1-5 35 14 Comparative Example 1 -1 61 38 1-2 60 35 1-3 68 37 It can be seen from Table 2 that the reflectance of the film of Example 1 -1 to 1 - 5 is -10- 1283710, which is compared with Comparative Example 1-1. ~1 - 3 films are much less, indicating good corrosion resistance. Examples 2 - 1 to 2-4 and Comparative Examples 2 - 1 to 2-2 Reflective films are used for liquid crystal related and organic EL, DVD, DVD-RW and DVD In the case of -RAM or the like, it may be exposed to a high temperature of 200 ° C or higher depending on the use conditions. For example, when a film of pure silver is exposed to a high temperature of 200 ° C or higher, a phenomenon such as agglomeration of the film may occur, and the reflectance may be lowered. Therefore, these applications require that the film be stable to heat. In particular, when the wavelength of the laser used in the optical recording medium is 405 nm, heat resistance in the short-wavelength region is required. In order to determine the thermal stability of the film formed of the sputtering target of the present invention, a sputtering target of the composition shown in Table 3 below was produced in the same manner as the above example, and this sputtering was performed in the same manner as the above example. The target was formed into a film having a composition shown in Table 3 having a thickness of about 15 Onm on a glass substrate, and the thermal stability of the film was measured. Table 3 Sample N 〇. Composition Example 2-1 Silver-0.5% by mass Indium-0.2% by mass Copper 2-2 Silver-1.0% by mass Indium-0.7% by mass Copper 2-3 Silver-0.6% by mass Indium-0.4% by mass Nickel 2-4 Silver - 0.8% by mass Indium - 0.5% by mass Cobalt - 0.05% by mass Palladium Comparative Example 2-1 Silver 2-2 Silver - 1. 〇 mass % indium
爲要評估薄膜的熱安定性，測定已形成的薄膜之反射 -11- 1283710 率後，將此薄膜置於大氣中2 5 0 °C下進行1小時熱處理’再 度測定其反射率’根據下式算出熱處理前後的反射率之變 化率。其結果如表4所示。 變化率（％ )= 1 0 0 —（熱處理後的反射率/熱處理前 的反射率X 1 〇〇 ) 表4 試料No. 變化率％ 測定波長400mn 測定波長700nm 實施例 2-1 6 1 2-2 5’ 0 2-3 3 1 2-4 3 0 比較例 2-1 16 1 2-2 11 ] 從表4的結果可知，測定波長爲700㈣時，各試驗品 的熱處理前後的反射率幾乎無變化，測定波長爲400nHi時 ，實例2-1〜2-4的薄膜的耐熱性遠勝於比較例2-1及2-2 的薄膜的耐熱性。 實例3 - 1〜3 - 3及比較例3 - 1 當反射膜使用於如液晶般半透明·反射電極膜時，相 對於反射膜’爲要配線需要藉由濕式蝕刻的圖案形成特性 〇 胃-要 '測定由本發明的濺鍍靶材形成的薄膜之圖案形成 特性’和上述實例相同做法製作下述表5所示組成之濺鍍 -12- 1283710 畴 ,m 靶材，之後，和上述實例相同做法形成下述表5所示組成 之薄膜，進行以濕式蝕刻的圖案形成並評估其特性。又， 濕式蝕刻係使用碟酸+硝酸+醋酸+水的混合溶液。其結 果如下述表6所示。 試料No. 組成 實施例 3-1 銀-1.0質量％銦- 0.7質量％銅 3-2 銀- 0.6質星％銅- 0.4質量％錬 3-3 銀-0.8質量％銦-0.5質量％銅-〇.〇5質量％鈀 比較例 3-1 銀-2.0質量％金 表6 試料No. 評價 備註 實施例 3-1 〇 良好 3-2 〇 良好 3-3 〇 良好 比較例 3-1 X 有殘渣In order to evaluate the thermal stability of the film, the reflectance of the formed film was measured at a rate of -11-1283710, and the film was placed in the atmosphere at 250 ° C for 1 hour heat treatment 're-measured reflectance' according to the following formula The rate of change of the reflectance before and after the heat treatment was calculated. The results are shown in Table 4. Rate of change (%) = 1 0 0 - (reflectance after heat treatment / reflectance X 1 before heat treatment) Table 4 Sample No. Rate of change % Measurement wavelength 400 nm Measurement wavelength 700 nm Example 2-1 6 1 2- 2 5' 0 2-3 3 1 2-4 3 0 Comparative Example 2-1 16 1 2-2 11 ] From the results of Table 4, it is found that when the measurement wavelength is 700 (four), the reflectance of each test article before and after the heat treatment is almost no. When the measurement wavelength was 400 nHi, the heat resistance of the films of Examples 2-1 to 2-4 was much better than that of the films of Comparative Examples 2-1 and 2-2. Example 3 - 1 to 3 - 3 and Comparative Example 3 - 1 When a reflective film is used for a translucent/reflective electrode film such as a liquid crystal, it is necessary to form a pattern by wet etching with respect to the reflective film. - To determine the pattern formation characteristics of the film formed by the sputtering target of the present invention, the sputtering of the composition shown in Table 5 below, the m target, and the above examples were produced in the same manner as in the above examples. In the same manner, a film having the composition shown in the following Table 5 was formed, and a pattern formed by wet etching was formed and its characteristics were evaluated. Further, the wet etching system uses a mixed solution of a dish acid + nitric acid + acetic acid + water. The results are shown in Table 6 below. Sample No. Composition Example 3-1 Silver - 1.0% by mass Indium - 0.7% by mass Copper 3-2 Silver - 0.6 Star Star % Copper - 0.4% by mass 錬 3-3 Silver - 0.8% by mass Indium - 0.5% by mass Copper - 〇.〇5 mass% palladium Comparative Example 3-1 Silver-2.0% by mass Gold Table 6 Sample No. Evaluation Remarks Example 3-1 〇Good 3-2 〇Good 3-3 〇Good Comparative Example 3-1 X Residue
從表6可淸楚得知，實例3 - 1〜3 - 3的薄膜有良好的結果 ’比較例3 - 1的薄膜進行蝕刻後殘渣物一部份不溶殘留、 附著在基板上。此殘渣物係金。 【圖式簡單說明】··無 -13-As is clear from Table 6, the films of Examples 3 - 1 to 3 - 3 had good results. The film of Comparative Example 3 - 1 was partially insoluble and adhered to the substrate after etching. This residue is gold. [Simple description of the diagram]··No -13-