JP2007310967A - Translucent reflecting film for optical recording medium, and ag alloy sputtering target for forming the translucent reflecting film - Google Patents
Translucent reflecting film for optical recording medium, and ag alloy sputtering target for forming the translucent reflecting film Download PDFInfo
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この発明は、半導体レーザーなどのレーザービームを用いて音声、映像、文字などの情報信号を再生あるいは記録・再生・消去を行う光記録ディスク（ＣＤ−ＲＷ，ＤＶＤ−ＲＷ，ＤＶＤ−ＲＡＭなど）などの光記録媒体の構成層である半透明反射膜およびこの半透明反射膜をスパッタリング法にて形成するためのＡｇ合金スパッタリングターゲットに関するものである。 The present invention relates to an optical recording disk (CD-RW, DVD-RW, DVD-RAM, etc.) for reproducing or recording / reproducing / erasing information signals such as audio, video, and characters using a laser beam such as a semiconductor laser. The present invention relates to a translucent reflective film, which is a constituent layer of the optical recording medium, and an Ag alloy sputtering target for forming the translucent reflective film by a sputtering method.
近年、記録膜を２層有する２層記録型の光記録媒体が提案されており、この２層記録型の光記録媒体においては、入射光側に厚さ：５〜１５ｎｍ程度の極めて薄い半透明反射膜が設けられており、かかる半透明反射膜は入射光側の記録層に対する反射膜としての機能の他に光を透過して第二の記録層に記録または再生させる機能を有している。この２層記録型の光記録媒体に形成する半透明反射膜として純Ａｇ膜またはＡｇ合金膜が使用されており、この純Ａｇ膜またはＡｇ合金膜は加熱された記録膜の熱を速やかに逃がす作用を有するとともに４００〜８００ｎｍの幅広い波長域でのレーザー光に対する低い吸収率を有するところから広く使用されている。 In recent years, a two-layer recording type optical recording medium having two recording films has been proposed. In this two-layer recording type optical recording medium, an extremely thin translucent film having a thickness of about 5 to 15 nm on the incident light side. In addition to the function as a reflective film for the recording layer on the incident light side, the translucent reflective film has a function of transmitting light and recording or reproducing on the second recording layer. . A pure Ag film or an Ag alloy film is used as a translucent reflective film formed on the two-layer recording type optical recording medium. The pure Ag film or the Ag alloy film quickly releases the heat of the heated recording film. It is widely used because it has an action and has a low absorptance with respect to laser light in a wide wavelength range of 400 to 800 nm.
光記録媒体の反射膜の一例として、特許文献１にはＮｄまたはＹ内の少なくとも１種を０．１原子％以上含有し、さらにＡｕ、Ｃｕ、Ｐｄ、Ｍｇ、ＴｉおよびＴａよりなる群から選ばれた少なくとも１種を合計で０．２〜５．０原子％を含有し、残部がＡｇからなる成分組成を有する半透明反射膜が記載されており、この半透明反射膜はＮｄまたはＹ内の少なくとも１種を０．１原子％以上を含有し、さらにＡｕ、Ｃｕ、Ｐｄ、Ｍｇ、ＴｉおよびＴａよりなる群から選ばれた少なくとも１種を合計で０．２〜５．０原子％を含有し、残部がＡｇからなる成分組成を有するＡｇ合金ターゲットを使用してスパッタリングすることにより形成することが記載されている。
一般に、光記録媒体の半透明反射膜は、入射光を吸収すると、第二記録層において記録または再生する効率が劣化するという問題が生じることから、半透明反射膜においては入射光の半透明反射膜への吸収を低減させることが必要である。一方、半透明反射膜は入射側の第一の記録層への高倍速記録の要求から高熱伝導性も同時に実現しなければならない。
こうした特性を付与するのに最も好適な材料として純Ａｇが知られているが、純Ａｇからなる半透明反射膜は、使用直後の吸収率は最も低いが、記録、または記録／再生／消去の際に加熱されると膜が凝集することにより半透明反射膜に穴があいてしまい、さらに純Ａｇ製の半透明反射膜は耐食性に劣るために短時間で急激に吸収率が上昇するという問題点がある。
一方、特許文献１記載のＮｄまたはＹ内の少なくとも１種を０．１原子％以上含有し、さらにＭｇを０．２〜５．０原子％を含有し、残部がＡｇからなる成分組成を有する半透明反射膜を使用してみた。その結果、この半透明反射膜は、純Ａｇ製の半透明反射膜に比べて記録、または記録／再生／消去の際に加熱されても膜が凝集することはなく耐食性に優れており、吸収率の経時変化抑制効果がある程度見られるものの、その効果は十分でなく、さらに一層の入射光吸収率経時変化の抑制が求められていた。
In general, a semitransparent reflective film of an optical recording medium has a problem that the efficiency of recording or reproducing in the second recording layer deteriorates when incident light is absorbed. It is necessary to reduce absorption into the membrane. On the other hand, the semitransparent reflective film must also realize high thermal conductivity at the same time because of the requirement for high-speed recording on the first recording layer on the incident side.
Pure Ag is known as the most suitable material for imparting such characteristics, but a translucent reflective film made of pure Ag has the lowest absorptance immediately after use, but recording or recording / reproducing / erasing is not possible. When heated at this time, the film aggregates to cause a hole in the semitransparent reflective film, and the semi-transparent reflective film made of pure Ag is inferior in corrosion resistance, so that the absorptance increases rapidly in a short time. There is a point.
On the other hand, it contains at least one of Nd or Y described in Patent Document 1 in an amount of 0.1 atomic% or more, further contains 0.2 to 5.0 atomic% of Mg, and the balance is composed of Ag. I tried using a translucent reflective film. As a result, this semi-transparent reflective film is superior in corrosion resistance because it does not agglomerate even when heated during recording or recording / reproducing / erasing, compared to a pure Ag semi-transparent reflective film. Although the effect of suppressing the change over time in the rate is seen to some extent, the effect is not sufficient, and further suppression of the change over time in the incident light absorption rate has been demanded.
そこで本発明者らは、耐凝集性および耐食性を有する特性を有しかつ入射光の吸収率の経時変化の少ないＡｇ合金半透明反射膜を得るべく研究を行なった。その結果、
（イ）Ｍｇ：０．０５〜１質量％を含有し、さらに希土類元素の内でもＥｕ、Ｐｒ、ＣｅおよびＳｍの内の１種または２種以上を合計で０．０５〜１質量％を含有し、残部がＡｇおよび不可避不純物からなる組成のＡｇ合金からなる半透明反射膜は、従来のＡｇ合金半透明反射膜に比べて、低吸収率を維持しつつ、さらに一層の高耐凝集性、高耐食性などの特性を有し、したがって、入射光の吸収率経時変化が一層少なくなる、
（ロ）前記（イ）記載の半透明反射膜は、Ｍｇ：０．０５〜１質量％を含有し、さらにＥｕ、Ｐｒ、ＣｅおよびＳｍの内の１種または２種以上を合計で０．０５〜１質量％を含有し、残部がＡｇおよび不可避不純物からなる組成のＡｇ合金からなるＡｇ合金ターゲットを用いてスパッタリングすることにより得られる、という研究結果が得られたのである。
Therefore, the present inventors have studied to obtain an Ag alloy translucent reflective film having characteristics of aggregation resistance and corrosion resistance and having little change with time in the absorption rate of incident light. as a result,
(A) Mg: 0.05 to 1% by mass, and among the rare earth elements, one or more of Eu, Pr, Ce and Sm are contained in a total of 0.05 to 1% by mass. In addition, the translucent reflective film made of an Ag alloy having a composition consisting of Ag and inevitable impurities as the balance, while maintaining a low absorption rate as compared with the conventional Ag alloy translucent reflective film, further higher anti-agglomeration resistance, It has characteristics such as high corrosion resistance, and therefore the incident light absorption rate change with time is further reduced.
(B) The translucent reflective film described in (A) above contains Mg: 0.05 to 1% by mass, and one or more of Eu, Pr, Ce, and Sm are added in a total amount of 0.0. The research result was obtained that it was obtained by sputtering using an Ag alloy target composed of an Ag alloy having a composition containing 05 to 1% by mass and the balance being composed of Ag and inevitable impurities.
この発明は、かかる研究結果に基づいて成されたものであって、
（１）Ｍｇ：０．０５〜１質量％を含有し、さらにＥｕ、Ｐｒ、ＣｅおよびＳｍのうちの１種または２種以上を合計で０．０５〜１質量％を含有し、残部がＡｇおよび不可避不純物からなる組成の銀合金からなる光記録媒体の半透明反射膜、
（２）Ｍｇ：０．０５〜１質量％を含有し、さらにＥｕ、Ｐｒ、ＣｅおよびＳｍのうちの１種または２種以上を合計で０．０５〜１質量％を含有し、残部がＡｇおよび不可避不純物からなる組成の銀合金からなる光記録媒体の半透明反射膜形成用Ａｇ合金スパッタリングターゲット、に特徴を有するものである。
The present invention has been made based on such research results,
(1) Mg: 0.05 to 1% by mass, further containing one or more of Eu, Pr, Ce and Sm in a total of 0.05 to 1% by mass with the balance being Ag And a translucent reflective film of an optical recording medium comprising a silver alloy having a composition comprising inevitable impurities,
(2) Mg: 0.05 to 1% by mass, further containing one or more of Eu, Pr, Ce and Sm in a total of 0.05 to 1% by mass with the balance being Ag And an Ag alloy sputtering target for forming a translucent reflective film of an optical recording medium made of a silver alloy having a composition comprising inevitable impurities.
この発明の半透明反射膜を形成するためのＡｇ合金スパッタリングターゲットは、原料として純度：９９.９９質量％以上の高純度Ａｇ、純度：９９．９質量％以上の高純度Ｍｇ、純度：９９質量％以上の高純度Ｅｕ、Ｐｒ、ＣｅおよびＳｍを用意し、まず、高純度Ａｇを高真空もしくは不活性ガス雰囲気中で溶解して得られた高純度Ａｇ溶湯を作製し、これらのＡｇ溶湯にＭｇを所定の含有量となるように添加し、このようにして得られたＭｇ含有Ａｇ合金溶湯にＥｕ、Ｐｒ、ＣｅおよびＳｍの内の１種または２種以上を添加し、得られたＡｇ合金溶湯を鋳型に鋳造してインゴットを作製し、これらインゴットを冷間加工したのち機械加工することによりＡｇ合金スパッタリングターゲットを製造することができる。このようにして作製したＡｇ合金ターゲットを用い、通常のスパッタリング装置を用いてこの発明のＡｇ合金からなる半透明反射膜を形成することができる。 The Ag alloy sputtering target for forming the translucent reflective film of the present invention has a purity: high purity Ag of 99.99% by mass or more, purity: high purity Mg of 99.9% by mass or more, purity: 99% by mass. % High purity Eu, Pr, Ce and Sm are prepared. First, high purity Ag melts obtained by melting high purity Ag in a high vacuum or in an inert gas atmosphere are prepared. Mg is added so as to have a predetermined content, and one or more of Eu, Pr, Ce, and Sm are added to the molten Mg-containing Ag alloy thus obtained, and the resulting Ag is obtained. An Ag alloy sputtering target can be manufactured by casting an alloy melt into a mold to produce ingots, cold working these ingots, and then machining them. Using the thus produced Ag alloy target, a translucent reflective film made of the Ag alloy of the present invention can be formed using a normal sputtering apparatus.
次に、この発明のＡｇ合金からなる半透明反射膜およびこのＡｇ合金からなる半透明反射膜を形成するためのスパッタリングターゲットにおける成分組成を前記の如く限定した理由を説明する。 Next, the reason why the composition of components in the sputtering target for forming the translucent reflective film made of the Ag alloy of the present invention and the translucent reflective film made of the Ag alloy is limited as described above will be described.
Ｍｇ：
Ｍｇは、Ａｇに固溶して半透明反射膜の経時変化を抑制し、耐凝集性および耐食性を高める作用を有するが、Ｍｇを０．０５質量％未満含んでも半透明反射膜の吸収率が短時間で増加するために耐凝集性を高めるに十分な効果がなく、したがって、入射光吸収率の経時変化の十分な抑制効果が得られないので好ましくない。一方、Ｍｇを１質量％を越えて含有すると、半透明反射層の入射光の吸収率が大きくなり、光記録ディスクの第二記録層の記録または再生効率が劣化するので好ましくない。したがって、Ａｇ合金半透明反射膜およびこのＡｇ合金半透明反射膜を形成するためのスパッタリングターゲットに含まれるこれらＭｇの含有量を０．０５〜１質量％未満に定めた。一層好ましい範囲は０．１〜０．３質量％である。
Mg:
Mg dissolves in Ag to suppress the change of the translucent reflective film over time, and has the effect of improving the aggregation resistance and corrosion resistance. However, even if Mg is contained in an amount of less than 0.05% by mass, the translucency of the translucent reflective film is high. Since it increases in a short time, it is not preferable because it does not have a sufficient effect to increase the anti-aggregation property, and therefore a sufficient suppression effect on the change in incident light absorption over time cannot be obtained. On the other hand, if Mg is contained in excess of 1% by mass, the incident light absorption rate of the translucent reflective layer is increased, and the recording or reproducing efficiency of the second recording layer of the optical recording disk is deteriorated. Therefore, the content of Mg contained in the Ag alloy translucent reflective film and the sputtering target for forming the Ag alloy translucent reflective film is set to 0.05 to less than 1% by mass. A more preferable range is 0.1 to 0.3% by mass.
Ｅｕ、Ｐｒ、ＣｅおよびＳｍ：
これら元素は、Ａｇに僅かに固溶するほかＡｇと金属間化合物を結晶粒界に形成し、Ｍｇとともに含有することにより半透明反射膜の耐凝集性を高める作用を有するので添加するが、その添加量が０．０５質量％未満では耐凝集性を高める効果を発揮させることができず、一方、１質量％を越えて添加すると半透明反射膜の耐食性に悪影響を及ぼし、さらに熱伝導率を低下させるので好ましくない。したがって、希土類元素の添加量は０．０５〜１質量％に定めた。一層好ましい範囲は０．２〜０．５質量％である。
Eu, Pr, Ce and Sm:
These elements are added because they dissolve slightly in Ag and form an intermetallic compound with Ag at the grain boundary, and have the effect of increasing the aggregation resistance of the translucent reflective film by containing it together with Mg. If the addition amount is less than 0.05% by mass, the effect of increasing the aggregation resistance cannot be exhibited. On the other hand, if the addition amount exceeds 1% by mass, the corrosion resistance of the translucent reflective film is adversely affected, and the thermal conductivity is further reduced. Since it lowers, it is not preferable. Therefore, the addition amount of the rare earth element is set to 0.05 to 1% by mass. A more preferable range is 0.2 to 0.5% by mass.
この発明の光記録媒体の半透明反射膜は、従来の光記録媒体の半透明反射膜に比べてほぼ同等の耐食性を有し、さらに、高熱伝導率および低吸収率を有し、しかも半透明反射膜の経時変化による膜の吸収率増大が一層抑制されるので、長期にわたって使用できる光記録媒体を製造することができ、メディア産業の発展に大いに貢献し得るものである。 The translucent reflective film of the optical recording medium of the present invention has substantially the same corrosion resistance as that of the conventional translucent reflective film of the optical recording medium, and further has a high thermal conductivity and a low absorption rate, and is also translucent. Since the increase in the absorption rate of the film due to the aging of the reflective film is further suppressed, an optical recording medium that can be used for a long time can be manufactured, which can greatly contribute to the development of the media industry.
原料として純度:９９．９９質量％以上のＡｇ、純度:９９．９質量％以上のＭｇ、および純度：９９質量％以上のＥｕ、Ｐｒ、Ｃｅ、Ｓｍ、ＮｄおよびＹを用意した。
まず、Ａｇを高周波真空溶解炉で溶解してＡｇ溶湯を作製し、このＡｇ溶湯にＭｇを添加し、さらにＥｕ、Ｐｒ、Ｃｅ、Ｓｍ、ＮｄおよびＹを添加して溶解し鋳造することによりインゴットを作製し、得られたインゴットを冷間圧延したのち、大気中で６００℃、２時間保持の熱処理を施し、次いで機械加工することにより直径：１５２．４ｍｍ、厚さ：６ｍｍの寸法を有し、表１〜２に示される成分組成を有する本発明ターゲット１〜３０、比較ターゲット１〜１０および従来ターゲット１〜２を作製した。
Purity: 99.99 mass% or more of Ag, purity: 99.9 mass% or more of Mg, and purity: 99 mass% or more of Eu, Pr, Ce, Sm, Nd, and Y were prepared as raw materials.
First, Ag is melted in a high-frequency vacuum melting furnace to produce a molten Ag, Mg is added to the molten Ag, and further, Eu, Pr, Ce, Sm, Nd and Y are added and melted and cast to form an ingot. After cold rolling the obtained ingot, it was subjected to heat treatment at 600 ° C. for 2 hours in the atmosphere, and then machined to have a diameter of 152.4 mm and a thickness of 6 mm. Invention targets 1 to 30, comparative targets 1 to 10, and conventional targets 1 and 2 having the component compositions shown in Tables 1 and 2 were produced.
これら本発明ターゲット１〜３０、比較ターゲット１〜１０および従来ターゲット１〜２を用いてそれぞれ半透明反射膜を作製し、これら半透明反射膜について下記の測定を行い、その結果を表３〜４に示した。 A semitransparent reflective film was prepared using each of the present invention targets 1-30, comparative targets 1-10, and conventional targets 1-2, and the following measurements were performed on these semitransparent reflective films. The results are shown in Tables 3-4. It was shown to.
（ａ）膜の熱伝導率測定
これら本発明ターゲット１〜３０、比較ターゲット１〜１０および従来ターゲット１〜２をそれぞれ無酸素銅製のバッキングプレートにはんだ付けし、これを直流マグネトロンスパッタ装置に装着し、真空排気装置にて直流マグネトロンスパッタ装置内を１×１０-4Ｐａ以下まで排気した後、Ａｒガスを導入して１．０Ｐａのスパッタガス圧とし、続いて直流電源にてターゲットに２５０Ｗの直流スパッタ電力を印加し、前記ターゲットに対抗しかつ７０ｍｍの間隔を設けて前記ターゲットと平行に配置した縦：３０ｍｍ、横：３０ｍｍ、厚さ：１ｍｍの酸化膜付きＳｉウエハ基板と前記ターゲットの間にプラズマを発生させ、厚さ：１０ｎｍを有し表３〜５に示される成分組成を有する本発明半透明反射膜１〜３０、比較半透明反射膜１〜１０および従来半透明反射膜１〜２を形成した。
(A) Measurement of thermal conductivity of film These inventive targets 1 to 30, comparative targets 1 to 10, and conventional targets 1 to 2 are each soldered to a backing plate made of oxygen-free copper, and this is mounted on a DC magnetron sputtering apparatus. After evacuating the DC magnetron sputtering apparatus to 1 × 10 −4 Pa or less with a vacuum evacuation apparatus, Ar gas is introduced to obtain a sputtering gas pressure of 1.0 Pa, and then a DC power of 250 W is applied to the target. Sputtering power is applied between the target and the Si wafer substrate with an oxide film having a length of 30 mm, a width of 30 mm, and a thickness of 1 mm arranged in parallel to the target with a distance of 70 mm facing the target. This invention translucent reflective films 1-30 which generate plasma, have thickness: 10 nm, and have the component composition shown in Tables 3-5 Comparative translucent reflective films 1 to 10 and conventional translucent reflective films 1 to 2 were formed.
これら表３〜４に示される成分組成を有する本発明半透明反射膜１〜３０、比較半透明反射膜１〜１０および従来半透明反射膜１〜２の比抵抗を四探針法により測定し、ウィーデマンフランツの法則に基づく式：κ＝２．４４×１０−８Ｔ／ρ（ただし、κ：熱伝導率、Ｔ：絶対温度、ρ：比抵抗）により比抵抗値から熱伝導率を計算により求め、その結果を表３〜４に示した。 The specific resistances of the semitransparent reflective films 1 to 30 of the present invention, the comparative semitransparent reflective films 1 to 10 and the conventional semitransparent reflective films 1 and 2 having the component compositions shown in Tables 3 to 4 were measured by the four-probe method. The thermal conductivity is calculated from the specific resistance value according to the formula based on the Wiedemann Franz law: κ = 2.44 × 10 −8 T / ρ (where κ: thermal conductivity, T: absolute temperature, ρ: specific resistance). It calculated | required by calculation and the result was shown to Tables 3-4.
（ｂ）膜の吸収率測定
反射率・透過率を測定するために縦：３０ｍｍ、横：３０ｍｍ、厚さ：０．６ｍｍのポリカーボネート基板と前記本発明ターゲット１〜３０、比較ターゲット１〜１０および従来ターゲット１〜２の間にプラズマを発生させ、ポリカーボネート基板に厚さ：１０ｎｍの表３〜５に示される成分組成を有する本発明半透明反射膜１〜３０、比較半透明反射膜１〜１０および従来半透明反射膜１〜２を形成し、波長：６５０ｎｍでの半透明反射膜側からの反射率、および透過率を分光光度計にて測定し、「１００−（反射率＋透過率）」を吸収率と定義して求め、その結果を表３〜４に示した。
(B) Measurement of film absorptivity In order to measure reflectance / transmittance, the length: 30 mm, width: 30 mm, thickness: 0.6 mm polycarbonate substrate, the present invention targets 1-30, comparative targets 1-10 and Conventional semi-transparent reflective films 1 to 30 having comparative composition shown in Tables 3 to 5 having a thickness of 10 nm on a polycarbonate substrate and plasmas generated between conventional targets 1 and 2 and comparative semi-transparent reflective films 1 to 10 And the conventional translucent reflective films 1 and 2 were formed, and the reflectance and transmissivity from the translucent reflective film side at a wavelength of 650 nm were measured with a spectrophotometer, and “100− (reflectance + transmittance)” "Is defined as an absorptance, and the results are shown in Tables 3-4.
（ｃ）膜の耐凝集性測定
縦：３０ｍｍ、横：３０ｍｍ、厚さ：０．６ｍｍのポリカーボネート基板と前記本発明ターゲット１〜３０、比較ターゲット１〜１０および従来ターゲット１〜２の間にプラズマを発生させ、ポリカーボネート基板に厚さ：１０ｎｍの表３〜５に示される成分組成を有する本発明半透明反射膜１〜３０、比較半透明反射膜１〜１０および従来半透明反射膜１〜２を形成し、これら耐凝集性評価サンプルを温度：９０℃、相対湿度：８５％の恒温恒湿槽にて３００時間保持したのち、波長：６５０ｎｍでの半透明反射膜側からの反射率、および透過率を分光光度計にて測定し、前記吸収率の定義により耐凝集性試験後の膜の吸収率を求めた。耐凝集性試験前の吸収率として前記（ｂ）膜の吸収率測定で求めた値を用い、耐凝集性試験前後の吸収率増加量を求め、その結果を表３〜４に示して膜の耐凝集性を評価した。
(C) Measurement of film aggregation resistance Plasma between a polycarbonate substrate having a length of 30 mm, a width of 30 mm, and a thickness of 0.6 mm and the targets 1 to 30 of the present invention, the comparison targets 1 to 10 and the conventional targets 1 to 2 The present invention translucent reflective films 1 to 30, comparative semitransparent reflective films 1 to 10 and conventional translucent reflective films 1 to 2 having the composition shown in Tables 3 to 5 having a thickness of 10 nm on a polycarbonate substrate And holding these agglomeration resistance evaluation samples in a constant temperature and humidity chamber at a temperature of 90 ° C. and a relative humidity of 85% for 300 hours, and then the reflectance from the translucent reflective film side at a wavelength of 650 nm, and The transmittance was measured with a spectrophotometer, and the absorptance of the film after the anti-aggregation test was determined according to the definition of the absorptance. Using the value obtained by measuring the absorption rate of the film (b) as an absorptance before the agglomeration resistance test, the amount of increase in the absorptance before and after the agglomeration resistance test was determined, and the results are shown in Tables 3 to 4 Aggregation resistance was evaluated.
表１〜４に示される結果から、本発明ターゲット１〜３０を用いてスパッタリングを行うことにより得られた半透明反射膜は、従来ターゲット１〜２を用いてスパッタリングを行うことにより得られた半透明反射膜に比べて熱伝導率が高く、吸収率増加量が低いので耐凝集性に一層優れていることから吸収率経時変化が一層少なく、したがって、半透明反射膜として優れた特性を有することがわかる。しかし、この発明の範囲から外れてＭｇ、Ｃａを含む比較ターゲット１〜１０を用いて作製した半透明反射膜は、吸収率増加量が低下したり、熱伝導率が低下したりして好ましくない特性が現れることが分かる。 From the results shown in Tables 1 to 4, the semitransparent reflective film obtained by performing sputtering using the present invention targets 1 to 30 is a semi-transparent film obtained by performing sputtering using conventional targets 1 and 2. Higher thermal conductivity and lower absorption rate increase compared to transparent reflective film, so it has better agglomeration resistance, so there is less change in absorptance over time, and therefore it has excellent properties as a translucent reflective film. I understand. However, a translucent reflective film manufactured using comparative targets 1 to 10 containing Mg and Ca that is out of the scope of the present invention is not preferable because the amount of increase in the absorptance decreases or the thermal conductivity decreases. It can be seen that the characteristics appear.
Claims (2)
Mg: 0.05 to 1% by mass, further containing one or more of Eu, Pr, Ce and Sm in a total of 0.05 to 1% by mass with the balance being Ag and inevitable impurities An Ag alloy sputtering target for forming a translucent reflective film for an optical recording medium, comprising a silver alloy having a composition comprising:
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006139878A JP4864538B2 (en) | 2006-05-19 | 2006-05-19 | Translucent reflective film for optical recording medium and Ag alloy sputtering target for forming the translucent reflective film |
| CN2010102890353A CN101942644B (en) | 2005-12-29 | 2006-12-28 | Translucent reflective film and reflective film for optical recording medium, and ag alloy sputtering target for forming such translucent reflective film and reflective film |
| PCT/JP2006/326210 WO2007074895A1 (en) | 2005-12-29 | 2006-12-28 | TRANSLUCENT REFLECTIVE FILM AND REFLECTIVE FILM FOR OPTICAL RECORDING MEDIUM, AND Ag ALLOY SPUTTERING TARGET FOR FORMING SUCH TRANSLUCENT REFLECTIVE FILM AND REFLECTIVE FILM |
| US12/093,011 US8815149B2 (en) | 2005-12-29 | 2006-12-28 | Semi-reflective film and reflective film for optical recording medium, and Ag alloy sputtering target for forming semi-reflective film or reflective film for optical recording medium |
| CNA2006800493572A CN101346491A (en) | 2005-12-29 | 2006-12-28 | Translucent reflective film and reflective film for optical recording medium, and Ag alloy sputtering target for forming such translucent reflective film and reflective film |
| TW096107257A TWI405204B (en) | 2006-05-19 | 2007-03-02 | Translucent reflection film for optical recording medium, and ag alloy sputtering target for forming the reflection film |
| HK11104521.7A HK1150637A1 (en) | 2005-12-29 | 2011-05-06 | Semi-reflective film and reflective film for optical recording medium, and ag alloy sputtering target for forming such semi-reflective film and reflective film |
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| JP2012238365A (en) * | 2011-05-13 | 2012-12-06 | Mitsubishi Materials Corp | Translucent reflective film for optical recording media and manufacturing method thereof |
| JP2013076126A (en) * | 2011-09-30 | 2013-04-25 | Mitsubishi Materials Corp | Conductive film and method of manufacturing the same |
| JP2015061931A (en) * | 2012-12-07 | 2015-04-02 | 三菱マテリアル株式会社 | Ag ALLOY FILM, Ag ALLOY CONDUCTIVE FILM, Ag ALLOY REFLECTIVE FILM, Ag ALLOY SEMITRANSPARENT FILM, AND Ag ALLOY FILM FORMING SPUTTERING TARGET |
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| JP2002319185A (en) * | 2001-04-23 | 2002-10-31 | Sumitomo Metal Mining Co Ltd | Silver alloy for reflection film for optical recording disk |
| JP2005100604A (en) * | 2003-08-20 | 2005-04-14 | Mitsubishi Materials Corp | Reflective film of optical recording medium, and silver alloy sputtering target for forming reflective film |
| WO2005056850A1 (en) * | 2003-12-10 | 2005-06-23 | Tanaka Kikinzoku Kogyo K.K. | Silver alloy excelling in performance of reflectance maintenance |
| JP2007035104A (en) * | 2005-07-22 | 2007-02-08 | Kobe Steel Ltd | Ag ALLOY REFLECTION FILM FOR OPTICAL INFORMATION RECORDING MEDIUM, OPTICAL INFORMATION RECORDING MEDIUM AND Ag ALLOY SPUTTERING TARGET FOR FORMING Ag ALLOY REFLECTION FILM FOR OPTICAL INFORMATION RECORDING MEDIUM |
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| JP2004131747A (en) * | 2002-10-08 | 2004-04-30 | Sumitomo Metal Mining Co Ltd | Silver alloy for display device, and display device using electrode film or reflection film formed by using the silver alloy |
| ATE379836T1 (en) * | 2004-06-29 | 2007-12-15 | Kobe Steel Ltd | SEMI-REFLECTIVE AND REFLECTIVE LAYER FOR AN OPTICAL INFORMATION RECORDING MEDIUM, INFORMATION RECORDING MEDIUM, AND SPUTTER TARGET |
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| JP2002319185A (en) * | 2001-04-23 | 2002-10-31 | Sumitomo Metal Mining Co Ltd | Silver alloy for reflection film for optical recording disk |
| JP2005100604A (en) * | 2003-08-20 | 2005-04-14 | Mitsubishi Materials Corp | Reflective film of optical recording medium, and silver alloy sputtering target for forming reflective film |
| WO2005056850A1 (en) * | 2003-12-10 | 2005-06-23 | Tanaka Kikinzoku Kogyo K.K. | Silver alloy excelling in performance of reflectance maintenance |
| JP2007035104A (en) * | 2005-07-22 | 2007-02-08 | Kobe Steel Ltd | Ag ALLOY REFLECTION FILM FOR OPTICAL INFORMATION RECORDING MEDIUM, OPTICAL INFORMATION RECORDING MEDIUM AND Ag ALLOY SPUTTERING TARGET FOR FORMING Ag ALLOY REFLECTION FILM FOR OPTICAL INFORMATION RECORDING MEDIUM |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012238365A (en) * | 2011-05-13 | 2012-12-06 | Mitsubishi Materials Corp | Translucent reflective film for optical recording media and manufacturing method thereof |
| JP2013076126A (en) * | 2011-09-30 | 2013-04-25 | Mitsubishi Materials Corp | Conductive film and method of manufacturing the same |
| JP2015061931A (en) * | 2012-12-07 | 2015-04-02 | 三菱マテリアル株式会社 | Ag ALLOY FILM, Ag ALLOY CONDUCTIVE FILM, Ag ALLOY REFLECTIVE FILM, Ag ALLOY SEMITRANSPARENT FILM, AND Ag ALLOY FILM FORMING SPUTTERING TARGET |
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| JP4864538B2 (en) | 2012-02-01 |
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