JP2003293055A - Silver alloy thin film and silver alloy for forming thin film - Google Patents

Silver alloy thin film and silver alloy for forming thin film

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Publication number
JP2003293055A
JP2003293055A JP2002105435A JP2002105435A JP2003293055A JP 2003293055 A JP2003293055 A JP 2003293055A JP 2002105435 A JP2002105435 A JP 2002105435A JP 2002105435 A JP2002105435 A JP 2002105435A JP 2003293055 A JP2003293055 A JP 2003293055A
Authority
JP
Japan
Prior art keywords
thin film
silver alloy
reflectance
film
alloy thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002105435A
Other languages
Japanese (ja)
Inventor
Juichi Shimizu
寿一 清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to JP2002105435A priority Critical patent/JP2003293055A/en
Publication of JP2003293055A publication Critical patent/JP2003293055A/en
Pending legal-status Critical Current

Links

Abstract

<P>PROBLEM TO BE SOLVED: To provide a silver alloy thin film which has a high reflectivity, is excellent in the uniformity of the reflectivity, and also has a reduced change with the lapse of time, i.e., the one which is suitably used for a reflection film of an optical recording disk dealing with high recording density or of a display device dealing with a high definition screen, and to provide a silver alloy which is suitably used for forming the silver alloy thin film. <P>SOLUTION: The silver alloy thin film contains 0.01 to 0.1 atomic % of one or more kinds of metals selected from Pd and Pt, and, if required, containing one or more kinds of metals selected from Zn, Mg and Cu, and the balance Ag with inevitable impurities. The silver alloy suitably used for the production of the same has the same componential composition. <P>COPYRIGHT: (C)2004,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、各種の光記録ディ
スクや表示デバイス装置の反射膜などに用いて好適な銀
合金薄膜、および該銀合金薄膜の製造に用いて好適な銀
合金に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silver alloy thin film suitable for use as a reflective film of various optical recording disks and display device devices, and a silver alloy suitable for use in the production of the silver alloy thin film.

【0002】[0002]

【従来の技術】ディスクに記録した情報を光信号を用い
て読み取るCD、DVD、MODなどの各種光記録ディスクや、
画像情報を表示するためのLCD、PDP、ELなどの各種表示
デバイス装置には、スパッタリングや蒸着などの方法に
より形成された厚さ数百Å〜数千Åの反射膜が用いられ
ている。
2. Description of the Related Art Various optical recording discs such as CDs, DVDs, and MODs that read information recorded on discs using optical signals,
Various display device devices such as LCDs, PDPs, and ELs for displaying image information use a reflective film having a thickness of several hundred Å to several thousand Å formed by a method such as sputtering or vapor deposition.

【0003】この反射膜には、反射率が高いこと、反射
率が面内で均一なこと、反射率の経時変化が小さいこと
などの特性が要求される。そのため、従来は、Al、Au、
Agおよびそれらの合金からなる金属薄膜が主として用い
られてきた。
The reflective film is required to have characteristics such as high reflectance, uniform reflectance within the surface, and small change in reflectance over time. Therefore, conventionally, Al, Au,
Metallic thin films consisting of Ag and their alloys have been mainly used.

【0004】近年、光記録ディスクや表示デバイス装置
の高記録密度化、高精細化に対応して、反射率がより高
く、反射率の均一性がより優れた反射膜に対する要求が
高まってきている。
In recent years, in response to higher recording density and higher definition of optical recording disks and display device devices, there is an increasing demand for a reflective film having a higher reflectance and a more uniform reflectance. .

【0005】上記AlおよびAl合金からなる反射膜は、反
射率が低いため、上記要求特性を満足できないことが明
らかになっている。また、上記AuおよびAu合金からなる
反射膜は、上記要求特性を満足できる可能性はあるが、
価格が非常に高いため、市販の光記録ディスクや表示デ
バイス装置に用いることが困難である。
It has been clarified that the above-mentioned required characteristics cannot be satisfied because the reflective film made of Al and Al alloy has a low reflectance. Further, the reflective film made of Au and Au alloy may satisfy the above required characteristics,
Since the price is very high, it is difficult to use it in a commercially available optical recording disk or display device.

【0006】[0006]

【発明が解決しようとする課題】前記従来の反射膜のう
ちのAgおよびAg合金からなる反射膜は、反射率が高いと
いう点で好適な材料である。しかしながら、特に純Agか
らなる反射膜は、反射率の均一性や経時変化の点で、前
記要求特性を十分に満足させることができなかった。
Among the conventional reflection films, the reflection film made of Ag and Ag alloy is a preferable material in that it has high reflectance. However, in particular, the reflective film made of pure Ag could not sufficiently satisfy the required characteristics in terms of uniformity of reflectance and change with time.

【0007】そこで、本発明の目的は、上記問題点を解
決し、反射率が高く、反射率の均一性が優れ、かつ経時
変化が小さい銀合金薄膜、換言すれば高記録密度対応の
光記録ディスクや高精細画面対応の表示デバイス装置の
反射膜に用いて好適な銀合金薄膜を提供すること、およ
び該銀合金薄膜の製造に用いて好適な銀合金を提供する
ことにある。
Therefore, an object of the present invention is to solve the above-mentioned problems and to provide a silver alloy thin film having a high reflectance, an excellent reflectance uniformity, and a small change with time, in other words, an optical recording corresponding to a high recording density. It is intended to provide a silver alloy thin film suitable for use as a reflective film of a display device for a disk or a high-definition screen, and to provide a silver alloy suitable for use in manufacturing the silver alloy thin film.

【0008】[0008]

【課題を解決するための手段】本発明の銀合金薄膜は、
一特徴によれば、PdおよびPtのうちの1種以上を0.01〜
0.1原子%含み、残部がAgおよび不可避不純物からなる。
反射率は90%以上が好ましく、95%以上であることがさら
に好ましい。
The silver alloy thin film of the present invention comprises:
According to one characteristic, at least one of Pd and Pt is 0.01-
Containing 0.1 atom%, the balance consisting of Ag and unavoidable impurities.
The reflectance is preferably 90% or more, more preferably 95% or more.

【0009】本発明の銀合金薄膜は、他の特徴によれ
ば、PdおよびPtのうちの1種以上を0.01〜0.1原子%、並
びにZn、MgおよびCuのうちの1種以上を0.1〜5原子%含
み、残部がAgおよび不可避不純物からなる。反射率は90
%以上が好ましく、95%以上であることがさらに好まし
い。
According to another characteristic, the silver alloy thin film of the present invention comprises 0.01 to 0.1 atom% of at least one of Pd and Pt, and 0.1 to 5 at least one of Zn, Mg and Cu. Containing atomic% and the balance consisting of Ag and unavoidable impurities. 90 reflectance
% Or more is preferable, and 95% or more is more preferable.

【0010】本発明の銀合金薄膜は、反射膜用、電極膜
用または遮光膜用に適している。
The silver alloy thin film of the present invention is suitable for a reflective film, an electrode film or a light-shielding film.

【0011】本発明の薄膜製造用銀合金は、一特徴によ
れば、PdおよびPtのうちの1種以上を0.01〜0.1原子%含
み、残部がAgおよび不可避不純物からなる。
According to one characteristic, the silver alloy for producing a thin film of the present invention contains 0.01 to 0.1 atom% of at least one of Pd and Pt, and the balance comprises Ag and unavoidable impurities.

【0012】本発明の薄膜製造用銀合金は、他の特徴に
よれば、PdおよびPtのうちの1種以上を0.01〜0.1原子
%、並びにZn、MgおよびCuのうちの1種以上を0.1〜5原
子%含み、残部がAgおよび不可避不純物からなる。
According to another characteristic, the silver alloy for producing a thin film of the present invention comprises 0.01 to 0.1 atom of at least one of Pd and Pt.
%, And 0.1 to 5 atomic% of one or more of Zn, Mg and Cu, and the balance Ag and inevitable impurities.

【0013】本発明の薄膜製造用銀合金スパッタリング
ターゲット用または蒸着源用に適している。
The present invention is suitable for a silver alloy sputtering target for thin film production or a vapor deposition source.

【0014】[0014]

【発明の実施の形態】本発明者は、上記目的を達成する
ため種々の検討を行った結果次の(1)〜(3)の事項
を見出し、本発明に到達した。
BEST MODE FOR CARRYING OUT THE INVENTION As a result of various studies to achieve the above object, the present inventor found the following items (1) to (3) and arrived at the present invention.

【0015】(1)純Agの反射膜で反射率の均一性が劣
るのは、スパッタリング法で該反射膜を形成する際に原
料として用いるターゲットの結晶粒が粗大なため、該反
射膜の(イ)膜厚のばらつきおよび(ロ)Ag結晶粒径の
ばらつきが大きくなりやすいからである。
(1) The reflectance uniformity of a pure Ag reflective film is inferior because the crystal grains of a target used as a raw material when forming the reflective film by a sputtering method are coarse, (A) The variation in film thickness and (b) variation in the Ag crystal grain size are likely to be large.

【0016】(2)純Agの反射膜で反射率の経時変化が
大きい(純Ag反射膜の安定性が劣る)のは、(イ)耐熱
性に関し、反射膜の使用環境下で、特に温度の影響によ
り、該反射膜中のAg結晶粒が粗大化しやすい、(ロ)耐
食性に関し、主としてAgの硫化によって該反射膜が腐食
されやすいからである。
(2) The reason why the reflectance of a pure Ag reflective film has a large change with time (the stability of the pure Ag reflective film is poor) is (a) heat resistance, especially in the environment where the reflective film is used. This is because Ag crystal grains in the reflective film are likely to be coarsened due to the influence of (2), and (b) with respect to corrosion resistance, the reflective film is easily corroded mainly by sulfurization of Ag.

【0017】(3)上記(1)および(2)の対策とし
て、Pd、Pt、Zn、Mg、Cuの添加が有効である。
(3) Addition of Pd, Pt, Zn, Mg, and Cu is effective as a measure against the above (1) and (2).

【0018】すなわち、本発明の銀合金薄膜は、その一
特徴によれば、PdおよびPtのうちの1種以上を0.01〜0.
1原子%含み、残部がAgおよび不可避不純物からなる。ま
た、他の特徴によれば、PdおよびPtのうちの1種以上を
0.01〜0.1原子%、並びにZn、MgおよびCuのうちの1種以
上を0.1〜5原子%含み、残部がAgおよび不可避不純物か
らなる。当該銀合金薄膜は、反射率が高く、反射率の均
一性が優れ、かつ経時変化が小さい。
That is, according to one characteristic, the silver alloy thin film of the present invention contains 0.01 to 0.1% of at least one of Pd and Pt.
Containing 1 atom%, the balance consisting of Ag and unavoidable impurities. According to another feature, one or more of Pd and Pt
0.01 to 0.1 atom% and 0.1 to 5 atom% of at least one of Zn, Mg and Cu, and the balance Ag and inevitable impurities. The silver alloy thin film has high reflectance, excellent uniformity of reflectance, and little change over time.

【0019】なお、反射率の均一性が優れるとは、具体
的には、反射率のばらつきが少ないということである。
ここで反射率のばらつきの意味は、次の通りである。す
なわち、分光光度計により、波長650nmの光を用い
て、薄膜試料中の相異なる場所の30点で反射率を測定
する。こうして得た30点のデータの最大値と最小値と
の差を反射率のばらつきとする。
The fact that the uniformity of the reflectance is excellent means that the variation of the reflectance is small.
Here, the meaning of the variation in reflectance is as follows. That is, the reflectance is measured by a spectrophotometer using light having a wavelength of 650 nm at 30 points in different places in the thin film sample. The difference between the maximum value and the minimum value of the data of 30 points thus obtained is defined as the dispersion of the reflectance.

【0020】本発明の銀合金薄膜は、例えば光記録ディ
スクの反射膜用や、表示デバイス装置の反射膜用、電極
膜用、遮光膜用である。
The silver alloy thin film of the present invention is used, for example, for a reflective film of an optical recording disk, a reflective film of a display device, an electrode film, and a light-shielding film.

【0021】本発明の薄膜製造用銀合金は、その一特徴
によれば、PdおよびPtのうちの1種以上を0.01〜0.1原
子%含み、残部がAgおよび不可避不純物からなる。ま
た、他の特徴によれば、PdおよびPtのうちの1種以上を
0.01〜0.1原子%、並びにZn、MgおよびCuのうちの1種以
上を0.1〜5原子%含み、残部がAgおよび不可避不純物か
らなる。
According to one characteristic, the silver alloy for producing a thin film of the present invention contains 0.01 to 0.1 atom% of at least one of Pd and Pt, and the balance comprises Ag and inevitable impurities. According to another feature, one or more of Pd and Pt
0.01 to 0.1 atom% and 0.1 to 5 atom% of at least one of Zn, Mg and Cu, and the balance Ag and inevitable impurities.

【0022】本発明の薄膜製造用銀合金は、例えばスパ
ッタリングターゲット用、蒸着源用である。
The silver alloy for producing a thin film of the present invention is, for example, for a sputtering target or a vapor deposition source.

【0023】本発明の銀合金薄膜は、本発明の薄膜製造
用銀合金を原料としてスッパタリングあるいは蒸着で形
成され、PdおよびPtのうちの1種以上を含むか、あるい
は、PdおよびPtのうちの1種以上、並びにZn、Mgおよび
Cuのうちの1種以上を含む。本発明の銀合金薄膜が、反
射率が高く、反射率の均一性、耐熱性および耐食性が優
れる理由は、次の(1)〜(4)の通りである。
The silver alloy thin film of the present invention is formed by spattering or vapor deposition using the silver alloy for thin film production of the present invention as a raw material, contains at least one of Pd and Pt, or contains Pd and Pt. One or more of Zn, Mg and
Contains one or more of Cu. The reason why the silver alloy thin film of the present invention has high reflectance and is excellent in uniformity of reflectance, heat resistance and corrosion resistance is as follows (1) to (4).

【0024】(1)本発明の薄膜製造用銀合金は結晶粒
が微細化されている(平均結晶粒径:200μm以下)の
で、形成された第1発明および第2発明の銀合金薄膜
は、膜厚のばらつきが小さく、従って反射率の均一性が
優れる。反射率が均一になれば、銀合金が本来有する高
反射率が実現する。
(1) Since the crystal grains of the silver alloy for producing a thin film of the present invention are made fine (average crystal grain size: 200 μm or less), the formed silver alloy thin films of the first and second inventions are: The variation in film thickness is small, and therefore the uniformity of reflectance is excellent. If the reflectance is uniform, the high reflectance originally possessed by the silver alloy is realized.

【0025】(2)本発明の銀合金薄膜に含まれるPdお
よびPtは、該薄膜中の結晶粒を微細化し、さらに反射膜
中結晶粒の粗大化を抑える(該薄膜の結晶粒径のばらつ
き、およびそのばらつきの経時変化を小さくする)。従
って、Pt、Pdのうちの一種以上を添加することによ
り、反射率のばらつきを小さくし(反射率の均一性を向
上させ、反射率を高くし)、該薄膜の耐熱性を向上させ
る。
(2) Pd and Pt contained in the silver alloy thin film of the present invention make the crystal grains in the thin film finer and suppress coarsening of the crystal grains in the reflection film (variation of the crystal grain size of the thin film. , And its variation over time are reduced). Therefore, by adding at least one of Pt and Pd, the dispersion of the reflectance is reduced (the uniformity of the reflectance is improved and the reflectance is increased), and the heat resistance of the thin film is improved.

【0026】(3)本発明の銀合金薄膜に含まれるPdお
よびPtは、該薄膜の耐食性をも向上させる。
(3) Pd and Pt contained in the silver alloy thin film of the present invention also improve the corrosion resistance of the thin film.

【0027】(4)第2発明の銀合金薄膜に含まれるZ
n、MgおよびCuは、耐食性をさらに向上させる。
(4) Z contained in the silver alloy thin film of the second invention
n, Mg and Cu further improve the corrosion resistance.

【0028】PdおよびPtのうちの1種以上が0.01原子%
未満では、該1種以上の上記作用効果が十分得られず、
一方、0.1原子%を超えると、該1種以上の上記作用効果
がより大きくならない。また、0.1原子%を超えると、特
に表示デバイス装置用途で要求されるエッチング性が低
下する。そのために、表示デバイス装置の製造に好適な
エッチャーでエッチングをして薄膜にパターンを形成す
ることが困難になる。なお、この際エッチング力の強い
エッチャーを用いればエッチングは可能である。しか
し、その場合には薄膜以外の材料も同時にエッチングし
てしまうため、製造工程が複雑になってコストアップを
招く。
At least one of Pd and Pt is 0.01 atom%
If it is less than 1, the above-mentioned one or more of the above-mentioned effects cannot be sufficiently obtained,
On the other hand, if it exceeds 0.1 atom%, the above-mentioned one or more of the above-mentioned effects will not be increased. On the other hand, if it exceeds 0.1 atom%, the etching property required particularly for display device applications is deteriorated. Therefore, it becomes difficult to form a pattern on a thin film by etching with an etcher suitable for manufacturing a display device. At this time, etching can be performed by using an etcher having a strong etching power. However, in that case, materials other than the thin film are simultaneously etched, which complicates the manufacturing process and raises the cost.

【0029】Zn、MgおよびCuのうちの1種以上が0.1原
子%未満では、該1種以上の耐食性向上作用が十分得ら
れない。一方、5原子%を超えると、反射率の低下が大き
くなる。
If at least one of Zn, Mg and Cu is less than 0.1 atomic%, the corrosion resistance improving action of at least one of them cannot be sufficiently obtained. On the other hand, when it exceeds 5 atomic%, the decrease in reflectance becomes large.

【0030】なお、本発明の銀合金薄膜は、光記録ディ
スクや表示デバイス装置の反射膜用として好適である。
また、反射率が高い点、耐食性に優れる点、エッチング
性に優れる点、さらに純Agに近い純度を有し電気抵抗が
低い点から、表示デバイス装置の電極膜用、遮光膜用と
しても好適である。
The silver alloy thin film of the present invention is suitable for a reflective film of an optical recording disk or a display device.
Further, the high reflectance, the excellent corrosion resistance, the excellent etching property, and the low electric resistance having a purity close to that of pure Ag are suitable for the electrode film of the display device and the light-shielding film. is there.

【0031】本発明の銀合金薄膜は、本発明の薄膜製造
用銀合金であるスパッタリングターゲットや蒸着源など
の薄膜製造原料から形成することができる。この原料の
成分組成は、形成したい銀合金薄膜の成分組成とほぼ同
様にすればよい。
The silver alloy thin film of the present invention can be formed from a thin film manufacturing raw material such as a sputtering target or a vapor deposition source which is the silver alloy for thin film manufacturing of the present invention. The component composition of this raw material may be substantially the same as that of the silver alloy thin film to be formed.

【0032】本発明の薄膜製造用銀合金は、粉末冶金法
や溶解鋳造法などの公知の合金製造方法により、適当な
塑性加工条件、加熱条件などで製造することができる。
The silver alloy for producing a thin film of the present invention can be produced by a known alloy production method such as a powder metallurgy method or a melt casting method under appropriate plastic working conditions and heating conditions.

【0033】[0033]

【実施例】[実施例1〜12、比較例1〜6]99.99原
子%の純度を有する塊状のAg、Pd、Pt、Zn、MgおよびCu
を配合し、真空溶解炉で鋳塊を溶製した。この鋳塊につ
いて熱間圧延した後に冷間圧延と焼鈍を繰り返すことに
より、ターゲットを得た。このターゲットについて化学
分析を行い、平均結晶粒径を測定した。なお、平均結晶
粒径は断線組織観察によった。これらの結果を表1に示
す。
Examples [Examples 1 to 12, Comparative Examples 1 to 6] Ag, Pd, Pt, Zn, Mg and Cu in the form of lumps having a purity of 99.99 atomic%
Was blended and the ingot was melted in a vacuum melting furnace. This ingot was hot-rolled and then cold-rolled and annealed repeatedly to obtain a target. This target was subjected to chemical analysis to measure the average crystal grain size. The average crystal grain size was determined by observing the broken structure. The results are shown in Table 1.

【0034】次に、上記ターゲットを用いて、マグネト
ロンスパッタ法により、10cm角のガラス基板上に、厚さ
3000Åの薄膜試料を形成した。形成した薄膜試料につい
て化学分析を行い、反射率、反射率均一性、耐熱性、耐
食性およびエッチング性を測定・評価した。
Next, using the above target, a magnetron sputtering method was performed to form a glass substrate having a thickness of 10 cm on a 10 cm square.
A 3000 Å thin film sample was formed. The thin film sample thus formed was subjected to chemical analysis to measure and evaluate reflectance, reflectance uniformity, heat resistance, corrosion resistance and etching property.

【0035】反射率の測定は、分光光度計により、波長
650nmの光を用いて、1つの薄膜試料中の相異なる場所
の30点で行った。得られたデータから平均値を求め、そ
れを薄膜試料の反射率とした。また、得られたデータか
らばらつきを求め、そのばらつきが小さいほど反射率の
均一性が良好と評価した。なお、ばらつきは、30点の測
定値の最大値と最小値との差である。
The reflectance is measured by a spectrophotometer at a wavelength.
Using 650 nm light, it was carried out at 30 different points in one thin film sample. An average value was obtained from the obtained data and used as the reflectance of the thin film sample. Further, the variation was obtained from the obtained data, and the smaller the variation was, the better the uniformity of reflectance was evaluated. The variation is the difference between the maximum value and the minimum value of the measured values at 30 points.

【0036】上記薄膜試料(成膜したまま)に500℃・1
0秒間の熱処理を施して得られた薄膜試料(加熱後)に
ついて、上記と同様に反射率を測定した。得られたデー
タから、平均値およびばらつきを求めた。そして、成膜
したままの試料についての平均値と加熱後の試料につい
ての平均値とを比較し、また成膜したままの試料につい
てのばらつきと加熱後の試料についてのばらつきとを比
較した。つまり、耐熱試験による平均値の変化(差)お
よびばらつきの変化(差)を調べた。それによって、成
膜したままの試料の耐熱性を総合的に評価した(平均値
の変化およびばらつきの変化が小さいほど耐熱性が高
い)。
The above thin film sample (as-formed) at 500 ° C.
The reflectance of the thin film sample (after heating) obtained by performing the heat treatment for 0 seconds was measured in the same manner as above. The average value and the variation were obtained from the obtained data. Then, the average value of the as-deposited sample and the average value of the heated sample were compared, and the variation of the as-deposited sample and the variation of the heated sample were compared. That is, the change (difference) in average value and the change (difference) in variation due to the heat resistance test were examined. Thereby, the heat resistance of the as-deposited sample was comprehensively evaluated (the smaller the change in average value and the change in variation, the higher the heat resistance).

【0037】耐食性については、成膜したままの試料を
ZnS粉末中に室温で1時間放置した後に、上記と同様に反
射率を測定した。そして、このように放置した反射率が
成膜したままの反射率から減少した減少分(差)の、成
膜したままの反射率に対する百分率(減少率(%))を求
めた。この減少率(%)が小さいほど耐食性が良好と評価
した。
Regarding the corrosion resistance, the sample as-formed was used.
After standing in ZnS powder at room temperature for 1 hour, the reflectance was measured in the same manner as above. Then, the percentage (reduction rate (%)) of the decrease (difference) in which the reflectance thus left to decrease from the reflectance as deposited was calculated with respect to the reflectance as deposited. The smaller the reduction rate (%), the better the corrosion resistance was evaluated.

【0038】エッチング性については、フォトレジスト
を用いてエッチングパターンを形成した後に、硝酸第2
セリウムアンモン系水溶液を用いてエッチング処理し
た。そして、パターン通りにエッチングされかつ膜剥離
や膜腐食が見られない場合をエッチング性「良」と、そ
うでない場合をエッチング性「不良」と評価した。
Regarding the etching property, after the etching pattern was formed using the photoresist, the second nitric acid solution was used.
Etching was performed using a cerium-ammonium-based aqueous solution. Then, when etching was performed according to the pattern and no film peeling or film corrosion was observed, the etching property was evaluated as “good”, and when not, the etching property was evaluated as “poor”.

【0039】以上のようにして得られた結果を表2に示
す。なお、薄膜試料の化学分析は、ターゲットの化学分
析とほぼ同等であった。
Table 2 shows the results obtained as described above. The chemical analysis of the thin film sample was almost the same as the chemical analysis of the target.

【0040】[0040]

【表1】 [Table 1]

【0041】[0041]

【表2】 [Table 2]

【0042】以上の結果から次の(1)〜(6)のこと
が分かる。
From the above results, the following (1) to (6) can be seen.

【0043】(1)実施例1〜12では、反射率が高
く、反射率の均一性に優れ、加熱や酸による反射率の変
化および反射率ばらつきの変化が小さく(耐熱性および
耐食性に優れ)、しかもエッチング性に優れる反射膜が
得られている。
(1) In Examples 1 to 12, the reflectance was high and the uniformity of the reflectance was excellent, and the change in reflectance and the variation in reflectance due to heating and acid were small (excellent in heat resistance and corrosion resistance). Moreover, a reflective film having excellent etching property is obtained.

【0044】(2)比較例1では、PdやPtが添加されて
いないためにターゲットの結晶粒が粗大になり(平均結
晶粒径:213μm)、薄膜の反射率均一性および耐熱性が
低下している(反射率ばらつきの変化(差)が大きい
(5.9%))。
(2) In Comparative Example 1, the crystal grains of the target became coarse (average crystal grain size: 213 μm) because Pd and Pt were not added, and the uniformity of reflectance and heat resistance of the thin film deteriorated. (Change (difference) in reflectance variation is large (5.9%)).

【0045】(3)比較例2、3では、Pd(比較例2)
およびPt(比較例3)が多すぎるために、これらの薄膜
のエッチング性が低下している。
(3) In Comparative Examples 2 and 3, Pd (Comparative Example 2)
And since the Pt (Comparative Example 3) is too much, the etching properties of these thin films are deteriorated.

【0046】(4)比較例4では、Znが多すぎるため
に、薄膜の反射率および耐熱性が低下している(反射率
平均値の変化(差)が大きい(2.5%))。
(4) In Comparative Example 4, the reflectivity and heat resistance of the thin film are reduced because the Zn content is too large (the change (difference) in the average reflectivity is large (2.5%)).

【0047】(5)比較例5では、Mgが多すぎるため
に、薄膜の反射率および反射率均一性が低下している。
(5) In Comparative Example 5, the reflectance and the uniformity of reflectance of the thin film are deteriorated because the Mg content is too much.

【0048】(6)比較例6では、Cuが多すぎるため
に、薄膜の反射率が低下している。
(6) In Comparative Example 6, the reflectance of the thin film is lowered because the Cu content is too large.

【0049】[0049]

【発明の効果】以上の説明から明らかなように、本発明
によれば、反射率が高く、反射率の均一性が優れ、かつ
経時変化が小さい銀合金薄膜、換言すれば高記録密度対
応の光記録ディスクや高精細画面対応の表示デバイス装
置などの反射膜、電極膜、遮光膜などに用いて好適な銀
合金薄膜を提供することができる。また、このような銀
合金薄膜の製造に用いて好適な銀合金をも提供すること
ができる。
As is apparent from the above description, according to the present invention, a silver alloy thin film having a high reflectance, an excellent uniformity of the reflectance, and a small change with time, in other words, a high recording density can be obtained. It is possible to provide a silver alloy thin film suitable for use as a reflective film, an electrode film, a light-shielding film, or the like of an optical recording disk or a display device device compatible with a high-definition screen. Further, a silver alloy suitable for use in producing such a silver alloy thin film can be provided.

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 PdおよびPtのうちの1種以上を0.01〜0.
1原子%含み、残部がAgおよび不可避不純物からなる銀合
金薄膜。
1. One or more of Pd and Pt are added in an amount of 0.01-0.
A silver alloy thin film containing 1 atomic% and the balance Ag and inevitable impurities.
【請求項2】 PdおよびPtのうちの1種以上を0.01〜0.
1原子%、並びにZn、MgおよびCuのうちの1種以上を0.1
〜5原子%含み、残部がAgおよび不可避不純物からなる銀
合金薄膜。
2. One or more of Pd and Pt are added in an amount of 0.01-0.
1 atomic% and at least one of Zn, Mg and Cu is 0.1
A silver alloy thin film containing ~ 5 atomic% and the balance Ag and inevitable impurities.
【請求項3】 反射率が90%以上である請求項1〜2の
いずれかに記載の銀合金薄膜。
3. The silver alloy thin film according to claim 1, which has a reflectance of 90% or more.
【請求項4】 反射膜用、電極膜用または遮光膜用であ
る請求項1〜3のいずれかに記載の銀合金薄膜。
4. The silver alloy thin film according to claim 1, which is for a reflective film, an electrode film, or a light-shielding film.
【請求項5】 PdおよびPtのうちの1種以上を0.01〜0.
1原子%含み、残部がAgおよび不可避不純物からなる薄膜
製造用銀合金。
5. One or more of Pd and Pt are added in an amount of 0.01-0.
A silver alloy for thin film production, containing 1 atomic% and the balance Ag and inevitable impurities.
【請求項6】 PdおよびPtのうちの1種以上を0.01〜0.
1原子%、並びにZn、MgおよびCuのうちの1種以上を0.1
〜5原子%含み、残部がAgおよび不可避不純物からなる薄
膜製造用銀合金。
6. One or more of Pd and Pt are added in an amount of 0.01-0.
1 atomic% and at least one of Zn, Mg and Cu is 0.1
A silver alloy for thin film production, containing ~ 5 atom% and the balance Ag and inevitable impurities.
【請求項7】 スパッタリングターゲット用または蒸着
源用である請求項5〜6のいずれかに記載の薄膜製造用
銀合金。
7. The silver alloy for producing a thin film according to claim 5, which is used for a sputtering target or an evaporation source.
JP2002105435A 2002-04-08 2002-04-08 Silver alloy thin film and silver alloy for forming thin film Pending JP2003293055A (en)

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Country Link
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005056851A1 (en) * 2003-12-10 2005-06-23 Tanaka Kikinzoku Kogyo K.K. Silver alloy excelling in performance of reflectance maintenance
WO2005056848A1 (en) * 2003-12-10 2005-06-23 Tanaka Kikinzoku Kogyo K.K. Silver alloy for reflective film
EP1889933A1 (en) * 2005-06-10 2008-02-20 Tanaka Kikinzoku Kogyo Kabushiki Kaisha Silver alloy excellent in reflectance/transmittance maintaining characteristics
JP2012219305A (en) * 2011-04-06 2012-11-12 Mitsubishi Materials Corp Silver alloy sputtering target for forming conductive film, and method for manufacturing the same
JP2014193590A (en) * 2013-02-27 2014-10-09 Dainippon Printing Co Ltd Laminate body used for manufacturing electronic component
JP2015061931A (en) * 2012-12-07 2015-04-02 三菱マテリアル株式会社 Ag ALLOY FILM, Ag ALLOY CONDUCTIVE FILM, Ag ALLOY REFLECTIVE FILM, Ag ALLOY SEMITRANSPARENT FILM, AND Ag ALLOY FILM FORMING SPUTTERING TARGET
EP3922748A4 (en) * 2019-02-06 2022-10-26 Mitsubishi Materials Corporation Ag alloy sputtering target, and ag alloy film

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005056851A1 (en) * 2003-12-10 2005-06-23 Tanaka Kikinzoku Kogyo K.K. Silver alloy excelling in performance of reflectance maintenance
WO2005056848A1 (en) * 2003-12-10 2005-06-23 Tanaka Kikinzoku Kogyo K.K. Silver alloy for reflective film
US7413618B2 (en) 2003-12-10 2008-08-19 Tanaka Kikinzoku Kogyo K.K. Silver alloy for reflective film
EP1889933A1 (en) * 2005-06-10 2008-02-20 Tanaka Kikinzoku Kogyo Kabushiki Kaisha Silver alloy excellent in reflectance/transmittance maintaining characteristics
EP1889933A4 (en) * 2005-06-10 2011-09-07 Tanaka Precious Metal Ind Silver alloy excellent in reflectance/transmittance maintaining characteristics
JP2012219305A (en) * 2011-04-06 2012-11-12 Mitsubishi Materials Corp Silver alloy sputtering target for forming conductive film, and method for manufacturing the same
JP2015061931A (en) * 2012-12-07 2015-04-02 三菱マテリアル株式会社 Ag ALLOY FILM, Ag ALLOY CONDUCTIVE FILM, Ag ALLOY REFLECTIVE FILM, Ag ALLOY SEMITRANSPARENT FILM, AND Ag ALLOY FILM FORMING SPUTTERING TARGET
JP2014193590A (en) * 2013-02-27 2014-10-09 Dainippon Printing Co Ltd Laminate body used for manufacturing electronic component
EP3922748A4 (en) * 2019-02-06 2022-10-26 Mitsubishi Materials Corporation Ag alloy sputtering target, and ag alloy film

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