Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
  • H10D62/117—Shapes of semiconductor bodies
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B10/00—Static random access memory [SRAM] devices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B12/00—Dynamic random access memory [DRAM] devices
  • H10B12/01—Manufacture or treatment
  • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
  • H10B12/05—Making the transistor
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B12/00—Dynamic random access memory [DRAM] devices
  • H10B12/50—Peripheral circuit region structures
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
  • H10K10/40—Organic transistors
  • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
  • H10K10/462—Insulated gate field-effect transistors [IGFETs]
  • H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
  • Y02E10/549—Organic PV cells
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
  • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
  • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

• the present invention relates to an integrated device using a linear element.
• conductive fibers in which the surface of cotton or silk is plated or wrapped with a conductive material such as gold or copper are known.
• the conductive fiber has a basic composition of yarn itself such as cotton and silk, and the yarn itself is at the center.
• An object of the present invention is to provide an integrated device which is not limited to a shape, has flexibility or flexibility, and is capable of producing various devices having an arbitrary shape. Disclosure of the invention
• a plurality of linear elements in which circuit elements are formed continuously or intermittently in the longitudinal direction are bundled, twisted, woven or knitted, joined, combined, formed into a shape, or formed into a non-woven shape.
• the present invention relates to a method of bundling, twisting, weaving or weaving, joining a plurality of linear elements each having a plurality of regions forming a circuit and having a cross section formed continuously or intermittently in a longitudinal direction. And an integrated device characterized by being formed in combination or formed into a non-woven shape.
• the present invention is a cloth-like body formed by weaving or knitting a plurality of linear elements in which circuit elements are formed continuously or intermittently in a longitudinal direction.
• the present invention is a fabric-like body characterized in that it is formed by weaving or weaving a plurality of linear elements whose cross sections having a plurality of regions forming a circuit are formed continuously or intermittently in a longitudinal direction. is there.
• the present invention is a garment characterized by being manufactured by weaving or weaving a plurality of linear elements having a plurality of regions forming a circuit and having a cross section formed continuously or intermittently in a longitudinal direction.
• the present invention is a garment characterized by being manufactured by weaving or knitting a plurality of linear elements each having a plurality of regions forming a circuit and having a cross section formed continuously or intermittently in a longitudinal direction.
• the element is an energy conversion element.
• the element is an electronic circuit element or an optical circuit element.
• the device is a semiconductor device.
• the element is a diode, a transistor or a thyristor.
• the element is a light emitting diode, a semiconductor laser or a light receiving device.
• the device is a DRAM, a SRAM, a flash memory, or another memory.
• the device is a photovoltaic device.
• the element is an image sensor element or a secondary battery element.
• the vertical cross-section must be circular, polygonal, star-shaped, crescent, petal, character-shaped, or any other shape.
• the whole or a part of the linear element is formed by extrusion.
• the linear element is formed by extruding a part or all of the element and further extending the element.
• the linear element is further expanded after the extrusion.
• the ring is a multiple ring.
• the multiple rings are made of different materials.
• a part or all of the space of the ring or the spiral is filled with another material.
• the outer diameter must be 10 mm or less.
• the outer diameter must be 1 mm or less.
• the outer diameter must be 1 ⁇ ⁇ or less.
• the aspect ratio must be 10 or more.
• the aspect ratio must be 100 or more. It is preferably 1000 or more as a thread.
• the gate electrode region, insulating region, source and drain regions, and semiconductor region must be formed in the cross section.
• It has a gate electrode region at the center, and an insulating region, source and drain regions, and a semiconductor region are sequentially formed outside the gate electrode region.
• a hollow region or an insulating region is provided at the center, and a semiconductor region is provided outside of the hollow region or the insulating region. Source and drain regions are provided in the semiconductor region so as to be partially exposed to the outside. A region and a gate electrode region.
• a region having at least a pn junction or a pin junction is formed in the cross section.
• the semiconductor region forming the circuit is made of an organic semiconductor material.
• the organic semiconductor material is polythiophene or polyphenylene.
• the conductive region forming the circuit is made of a conductive polymer.
• the conductive polymer is polyacetylene, polyphenylenevinylene, or polypyrrole.
• Different circuit elements are formed at arbitrary positions in the longitudinal direction.
• a portion having a different cross-sectional outer diameter at an arbitrary position in the longitudinal direction A portion having a different cross-sectional outer diameter at an arbitrary position in the longitudinal direction.
• a part of the region is composed of the conductive polymer, and the longitudinal orientation ratio of the molecular chain is 50%. That is all.
• 'A part of the region is composed of the conductive polymer, and the longitudinal orientation ratio of the molecular chain is 70% or more.
• a part of the region is composed of a conductive polymer, and the molecular chain has a circumferential orientation ratio of 50% or more.
• a part of the region is composed of the conductive polymer, and the circumferential orientation ratio of the molecular chain is 70% or more.
• the linear element is manufactured by the following method.
• Part of the region is formed of a conductive polymer.
• the difference between the running speed and the ejection speed must be 2 Om / sec or more.
• examples of the circuit element include an energy conversion element.
• the energy conversion element converts light energy into electric energy, converts electric energy into light energy, and includes an electronic circuit, a magnetic circuit, and an optical circuit element.
• a circuit element is an element that performs energy conversion, and is different from an optical fiber that simply transmits a signal.
• Examples of the circuit element include an electronic circuit element and an optical circuit element.
• a semiconductor element More specifically, for example, a semiconductor element.
• discretes include diodes, transistors (bipolar transistors, FETs, insulated gate transistors), and thyristors.
• Optical semiconductors include light-emitting diodes, semiconductor lasers, and light-emitting devices (phos and diodes, phototransistors, and image sensors). Examples of the memory include DRAM, flash memory, SRAM, and the like.
• the circuit elements are formed continuously or intermittently in the longitudinal direction. That is, a plurality of regions are arranged in a vertical cross section in the longitudinal direction, and the plurality of regions are arranged so as to form one circuit element. ing.
• an NPN bipolar transistor has three regions: an emitter N region, a base P region, and a collector P region. Therefore, these three regions are arranged in the cross section with necessary inter-region junctions.
• an arrangement method for example, a method of sequentially arranging the respective regions concentrically from the center of formation can be considered. That is, an emitter region, a base region, and a collector region may be sequentially formed from the center.
• an emitter region, a base region, and a collector region may be sequentially formed from the center.
• other arrangements are conceivable, and the same topological arrangement may be used as appropriate.
• the electrode connected to each region may be connected to each region from the end face of the thread-like element. It may be embedded in each area from the beginning. That is, when the semiconductor regions are arranged concentrically, the emitter electrode is provided at the center of the emitter region, the base electrode is provided at the base region, the collector electrode is provided at the outer periphery of the collector region, and the longitudinal direction is the same as that of each semiconductor region. It may be formed continuously in the direction. Note that the base electrode may be divided and arranged.
• the above NPN bipolar transistor can be integrally formed by an extrusion forming method described later.
• an NPN transistor is taken as an example, but similarly for other circuit elements, a plurality of regions are arranged with necessary junctions in the cross section, and the cross section is continuously formed in the longitudinal direction by, for example, extrusion. What is necessary is just to form.
• the circuit element may be formed by continuously forming the same element in a linear longitudinal direction, or may be formed intermittently.
• the outer diameter of the linear element in the present invention is preferably 10 mm or less, more preferably 5 mm or less. It is preferably at most 1 mm, more preferably at most 10 m. It can be reduced to 1 m or less, and even 0.1 m or less, by performing the stretching process. The smaller the outer diameter is, the more preferable it is for weaving the linear element into a fabric.
• a thick linear element may be formed once and then stretched in the longitudinal direction. It is also possible to place the melted raw material in a jet stream and melt-blow to achieve ultrafineness.
• the aspect ratio can be set to an arbitrary value by extrusion. In the case of spinning, it is preferably 1000 or more as a thread. For example, 100,000 or more are possible.
• the linear element When used after cutting, the linear element may be in a small unit of 10 to 10000, 10 or less, further 1 or less, and 0.1 or less.
• elements adjacent in the longitudinal direction can be different elements.
• the MOS FET (2) and the element isolation layer (2) may be formed as the MOS FET (n) and the element isolation layer (n).
• the length may be different depending on the characteristics of the desired circuit element. You can choose any. The same applies to the length of the element isolation layer.
• M ⁇ S FET M ⁇ S FET
• element isolation layer another layer may be interposed between M ⁇ S FET and the element isolation layer.
• the cross-sectional shape of the linear element is not particularly limited.
• the shape may be circular, polygonal, star-shaped, crescent, petal, or other shapes.
• a polygon shape in which a plurality of apex angles form an acute angle may be used.
• each region can be arbitrarily set. That is, for example, in the case of the structure shown in FIG. 1, the gate electrode may have a star shape, and the outer shape of the linear element may be circular.
• the cross-sectional shape can be easily realized by setting the shape of the extrusion die to the desired shape.
• any other material can be embedded in the space between the apex angles by, for example, dipping.
• the characteristics of the element can be changed depending on the application.
• linear element having a concave cross-sectional shape and a linear element having a convex cross-sectional shape are used.
• connection between the linear elements can be effectively established by fitting.
• the impurity may be contained in the molten raw material.However, after extrusion, the material is allowed to pass through the vacuum chamber in a linear form, and then, for example, ion implantation is performed in the vacuum chamber. May be doped with impurities.
• ions may be implanted only into the inner semiconductor layer by controlling the ion irradiation energy.
• the above manufacturing example is an example in which an element having a plurality of layers is integrally formed by extrusion.
• a basic part of the element By forming a basic part of the element into a linear shape by extrusion, and then coating the basic part with an appropriate method. It may be formed.
• a conductive polymer is preferably used as a material for the electrode, the semiconductor layer, and the like.
• a conductive polymer is preferably used.
• polyacetylene, polyacene, (oligoacene), polythiazyl, polythiophene, poly (3-alkylthiophene), oligothiophene, polypyrrole, polyaniline, polyphenylene and the like are exemplified. From these, an electrode or a semiconductor layer may be selected in consideration of conductivity or the like.
• semiconductor material for example, polyparaphenylene, polythiophene, poly (3-methylthiophene) and the like are preferably used.
• a material in which a dopant is mixed into the above semiconductor material may be used.
• an alkali metal Na, K, Ca
• As F 5 / As F 3 or C 1 ⁇ 4 — is used as a dopant.
• insulating material a general resin material may be used. Also, Si 2 or other inorganic materials may be used.
• the center region may be formed of an amorphous material (a metal material such as aluminum and copper: a semiconductor material such as silicon).
• the linear amorphous material may be formed by passing the amorphous material through the stopping portion of the mold, running the linear amorphous material, and coating the outer periphery with another desired area by injection.
• FIG. 1 is a perspective view showing a linear element used for an integrated device according to an embodiment.
• FIG. 2 is a conceptual front view showing an example of a linear device manufacturing apparatus.
• FIG. 3 is a front view and a plan view of a mold showing an extruder used for manufacturing a linear element.
• FIG. 4 is a view showing an embodiment of a linear element.
• FIG. 5 is a plan view of a mold used for manufacturing a linear element.
• FIG. 6 is a cross-sectional view illustrating an example of a manufacturing process of a linear element.
• FIG. 7 is a diagram showing an example of a manufacturing process of a linear element.
• FIG. 8 is a diagram showing a production example of a linear element.
• FIG. 9 is a perspective view showing a linear element used in the integrated device according to the embodiment.
• FIG. 10 is a cross-sectional view showing a linear element used in the integrated device according to the embodiment.
• FIG. 11 is a process chart showing an example of manufacturing a linear element.
• FIG. 12 is a perspective view showing an example of manufacturing a linear element.
• FIG. 13 is a diagram showing an integrated circuit device according to the embodiment.
• FIG. 14 is a diagram showing an integrated circuit device according to the embodiment.
• FIG. 15 is a diagram showing an integrated circuit device according to the embodiment.
• FIG. 16 is a diagram showing an integrated circuit device according to the embodiment. BEST MODE FOR CARRYING OUT THE INVENTION
• FIG. 1 shows a linear element used in an integrated device according to an embodiment of the present invention.
• Reference numeral 6 denotes a linear element. In this example, an M0SFET is shown.
• This element has a gate electrode region 1 at the center in the cross section, and an insulating region 2, a source region 4, a drain region 3, and a semiconductor region 5 are sequentially formed outside the gate electrode region 1.
• FIG. 2 shows a general configuration of an extrusion apparatus for forming such a linear element.
• the extruder 20 has raw material containers 21, 22, and 23 for holding raw materials for forming a plurality of regions in a molten state, a dissolved state, or a gel state.
• three raw material containers are shown, but they may be provided as appropriate according to the configuration of the linear element to be manufactured.
• the raw material in the raw material container 23 is sent to the mold 24.
• the mold 24 has an injection hole corresponding to the cross section of the linear element to be manufactured.
• the linear body injected from the injection hole is sent as a linear force to the next step, or a force wound by the roller 25.
• a gate material 30, an insulating material 31, a source / drain material 32, and a semiconductor material 34 are held in a molten or dissolved state or a gel state, respectively, in the container.
• holes are formed in the mold 24 so as to communicate with the respective material containers. That is, first, a plurality of holes 30a for injecting the gate material 30 are formed in the center. A plurality of holes 31a for injecting the insulating material 31 are formed around the outside. Further, a plurality of holes are further formed on the outer periphery, and only some of the holes 32 a and 33 a communicate with the source / drain material container 32. The other hole 34 a communicates with the semiconductor material container 34.
• the thread-like linear element is wound up by rollers 25. Or, if necessary, send it to the next step as a thread.
• a conductive polymer may be used as a gate electrode material.
• a gate electrode material for example, polyethylene, polyphenylenevinylene, polypropylene and the like are used.
• polyacetylene is preferable because a linear element having a smaller outer diameter can be formed.
• semiconductor material for example, polyparaphenylene, polythiophene, poly (3-methylthiophene) and the like are suitably used.
• a material in which a dopant is mixed into the above semiconductor material may be used.
• an alkali metal (Na, K, Ca) or the like may be mixed. Is sometimes used as a de one pan bets - A s F 5 / A s F 3 and C 1 0 4.
• insulating material a general resin material may be used. Also, Si 2 or other inorganic materials may be used.
• the extraction electrode is connected to the end face of the linear element.
• an outlet may be provided on the side surface at an appropriate position in the longitudinal direction.
• FIG. 4 shows a linear element used in the integrated device according to the second embodiment.
• the extraction electrode in Example 1 is provided on the side surface of the linear element.
• the take-out sections 41a and 41b shown in Fig. 4 (a) should be set at desired positions in the longitudinal direction. Can be.
• the distance between the extraction unit 41a and the extraction unit 41b can also be a desired value.
• Fig. 4 (a) shows an A-A cross section of the extraction section 41.
• the cross section BB in FIG. 4 (b) has the structure of the end face shown in FIG.
• the source electrode 45 and the drain electrode 46 are connected to the source 4 and the drain 4 as extraction electrodes on the side surfaces of the source 4 and the drain 3, respectively.
• the semiconductor layer 5 is insulated from the source electrode 45 and the drain electrode 46 by an insulating layer 47.
• the mold shown in FIG. 5 is used. That is, a hole 40a for an insulating layer and a hole 41a for an extraction electrode are provided on the side surfaces of the source and drain material ejection ports 33a and 34a.
• the hole 40a for the insulating layer communicates with the insulating layer material container (not shown), and the hole 41a for the extraction electrode communicates with the extraction electrode material container (not shown).
• the raw material is ejected only from 30a, 31a, 32a, 33a, and 34a. That is, the jets from 40a and 41a are turned off.
• the semiconductor layer raw material wraps around the portions corresponding to 40a and 41a and is extruded in the cross section shown in Example 1.
• the widths of the insulating layer 47, the drain electrode 45, and the source electrode 46 are set small.
• the jets from 40a and 41a are turned on. This changes the cross-sectional shape and extrudes the cross section shown in FIG.
• the length of the A-A section and the length of the B-B section can be adjusted to arbitrary lengths by appropriately changing the time for turning on and off the 40a and 41a.
• this example is also an example in which the cross-sectional shape is formed intermittently, and other cross-sectional shapes and materials can be used as AA.
• the entire A—A portion can be an insulating layer.
• it can be formed by the same method.
• the drain electrode 45 and the source electrode 46 are made large and the injection from the extraction electrode hole 41a is turned off, the raw material of the semiconductor layer or the raw material of the insulating layer does not completely flow,
• the part corresponding to the source electrode and the drain electrode is a space. After extrusion, the electrode material may be embedded in the space.
• Fig. 6 shows an embodiment.
• Embodiments 1 and 2 show the case where the linear element is integrally formed by extrusion, but in this example, a part of the linear element is formed by extrusion, and the other part is formed by external processing. Show.
• the linear element shown in Embodiment 2 is taken as an example of the linear element.
• the gate electrode 1 and the insulating film 2 are extruded to form a thread-like intermediate (FIG. 6 (a)).
• a semiconductor material is coated on the outside of the insulating film 2 in a molten or dissolved state or a gel state to form a semiconductor layer 61, which is used as a secondary intermediate (FIG. 6 (b)).
• Such coating may be performed by passing a thread-like intermediate through a bath of the semiconductor material in a molten, dissolved, or gel state.
• a method such as vapor deposition may be employed.
• a masking material 62 is coated on the outside of the semiconductor layer 61.
• the coating of the masking material 61 may also be formed by, for example, passing a secondary intermediate through a molten or dissolved or gelled masking material.
• a predetermined position (a position corresponding to the drain / source) of the masking material 62 is removed by etching or the like to form an opening 63 (FIG. 6 (c)).
• annealing is performed through a heat treatment chamber to form a source region and a drain region.
• extrusion and external processing may be appropriately combined in accordance with the arrangement of the region to be formed and the material.
• the gate electrode material is injected from the hole of the mold a by the spinning technique to form the gate electrode 1 (FIG. 7 (b)).
• This gate electrode 1 is called an intermediate filament for convenience.
• the insulating film material is injected from the hole formed in the mold b to insulate the insulating film. 2 is formed (Fig. 7 (c)).
• a heater is provided downstream of the mold b. necessary The filament is heated by this heater. By heating, the solvent component in the insulating film can be removed from the insulating film. The same applies to the formation of the following source / drain layers and semiconductor layers.
• the source / drain layers 3 and 4 are formed while running the intermediate filament (FIGS. 7 (c) and 7 (d)). Note that the source region 4 and the drain region 3 are formed separately on the insulating film 2. This is made possible by providing holes only in part of the mold c.
• the semiconductor layer 5 is formed in the same manner while the intermediate thread is passed through the center of the mold and travels in the same manner.
• Fig. 7 (f) when it is desired to provide source / drain extraction electrodes in a part of the longitudinal direction, some of the holes (source ⁇ The supply of the raw material from the hole corresponding to the drain electrode may be turned off. Further, when it is desired to provide a hole for taking out the entire lengthwise direction, the semiconductor layer may be formed using a mold d2 as shown in FIG. 7 (g).
• FIG. 8 shows a sixth embodiment.
• This embodiment shows an example of injection of a conductive polymer when a conductive polymer is used as a material for forming a semiconductor element.
• Example 5 shows an example in which the outer layer is formed on the surface of the intermediate filament while passing the intermediate filament in the mold. This example shows a case where the outer layer is a conductive polymer.
• Ingredients 8 2 — V At least 20 m / sec. Preferably, it is 50 m / sec. More preferably, it is 10 OmZSec or more.
• the upper limit is the speed at which the intermediate filament does not cut. The cutting speed varies depending on the discharge amount of the material, the viscosity of the material, the injection temperature, and the like, but specifically, it may be determined in advance by setting conditions such as the material to be implemented and conducting experiments.
• Spout speed V When the speed and the running speed V are set to 20 mZ sec or more, the ejected material is accelerated and an external force acts.
• the main direction of the external force is the traveling direction.
• the molecular chains in the conductive polymer are generally in a twisted state as shown in FIG. 8 (c), and their longitudinal directions are also oriented in random directions. However, when an external force is applied in the running direction together with the eruption, the molecular chains can be removed by burning as shown in Fig. 8 (b). And are arranged horizontally in the longitudinal direction.
• the molecular chains When an external force is applied in the running direction along with the ejection, the molecular chains can be oriented as shown in Fig. 8 (b). Also, the distance between the molecular chains can be reduced.
• this embodiment can be applied to the case where a predetermined region is formed of a conductive polymer in other embodiments.
• orientation ratio of the molecular chains in the longitudinal direction By setting the orientation ratio of the molecular chains in the longitudinal direction to 50% or more, electron mobility is increased, and a linear element having more excellent characteristics can be obtained. High orientation rates can also be controlled by controlling the difference between the jet speed and the running speed. Further, it can be controlled by controlling the stretching ratio in the longitudinal direction.
• the orientation ratio is obtained by multiplying the ratio of the number of molecules having an inclination of 0 to 5 ° with respect to the longitudinal direction to the total number of molecules by 100.
• FIG. 9 shows a linear element used in the integrated device according to the seventh embodiment.
• the linear element of this example has a hollow region or an insulating region 70 at the center, a semiconductor region 5 outside thereof, and a semiconductor device 5 in which a part is exposed to the outside. It has a source region 4 and a drain region 3, and has a gate insulating film region 2 and a gate electrode region 1 outside thereof.
• a protective layer made of an insulating resin or the like may be provided outside the gate electrode region 1. An appropriate position of the protective layer may be opened to serve as a gate electrode take-out portion.
• a cross section having another shape may be fed between the cross sections shown in FIG. 7 similarly to the second embodiment at an arbitrary position in the longitudinal direction.
• each of the electrode regions 1 is formed by coating. Is an insulating film 2, it is preferable to use an inorganic material such as S I_ ⁇ 2.
• FIG. 10A shows a linear element used in the integrated device according to the eighth embodiment. ⁇
• This example is a linear element having a pin structure.
• an electrode region 102 is provided at the center, and an n-layer region 101, an i-layer region 100, a p-layer region 103, and an electrode region 104 are formed outside thereof.
• a protective layer region 105 made of a transparent resin or the like is provided outside the P layer region 103.
• the electrode region 102, the n-layer region 101, and the i-layer region 100 are integrally formed by extrusion.
• the P layer region 103 and the electrode region 104 are formed by post-processing. For example, it is formed by coating or the like. By performing post-processing on the p-layer region 103, the thickness of the p-layer region 103 can be reduced. Therefore, when used as a photovoltaic element, incident light from the p-layer 103 can be efficiently taken into the depletion layer.
• the electrode region 102, the n-layer region 101, the i-layer region 100, the p-layer region 103, and the electrode region 104 may be integrally formed by extrusion.
• the circumferential shape of the i-th layer is a circle, but it is preferably a star shape.
• the junction area between the p-layer 103 and the i-layer 100 is increased, and the conversion efficiency can be increased.
• the electrode 104 is provided on a part of the p-layer 103, but may be formed so as to cover the entire circumference.
• ap + layer may be provided between the p layer 103 and the electrode 104.
• the p + layer By providing the p + layer, an ohmic contact between the p layer 103 and the electrode 104 can be easily obtained. In addition, electrons easily flow to the i-layer side.
• an organic semiconductor material is preferably used as a semiconductor material for forming the p-layer, the n-layer, and the i-layer.
• an organic semiconductor material is preferably used.
• polythiophene, polypyrrole and the like are used.
• appropriate doping may be performed.
• a combination of ⁇ -type polypyrrole / n-type polythiophene may be used.
• a conductive polymer is preferable as the electrode material. (Example 9)
• FIG. 10B shows a linear element used in the integrated device according to the ninth embodiment.
• the pin structure is formed concentrically, but in the present embodiment, the cross section is quadrangular.
• the p-layer region 83, the i-layer region 80, and the n-layer region 81 were arranged in a horizontal array. Electrodes 82 and 83 were formed on the side surfaces, respectively.
• the linear element having this structure may be integrally formed by extrusion.
• an electrode region is provided at the center, and one region made of a mixture of a p-type material and an n-type material is formed on the outer periphery. Further, an electrode region is formed on the outer periphery. That is, in the above example, a diode element having a two-layer structure in which a p-layer and an n-layer are joined (or a three-layer structure in which an i-layer is interposed) is shown. However, this example is a diode element having a single-layer structure made of a material obtained by mixing a p-type material and an n-type material.
• the p-type Zn-n type mixed material is obtained by mixing an electron donor conductive polymer and an electron acceptor conductive polymer.
• the linear element shown in the above example was further stretched in the longitudinal direction.
• a stretching method for example, a technique of stretching a copper wire or a copper tube may be used.
• the diameter can be further reduced by stretching.
• the molecular chains can be made parallel to the longitudinal direction as described above.
• the distance between the parallel molecular chains can be reduced. Therefore, electron hopping is performed efficiently. As a result, a linear element having better characteristics can be obtained.
• the draw ratio by stretching is preferably 10% or more. 10 to 99% is more preferable.
• the drawing ratio is 100 ⁇ (area before stretching / area after stretching) / (area before stretching). Stretching may be repeated a plurality of times. In the case of a material having a low elastic modulus, stretching may be performed repeatedly.
• the outer diameter of the linear element after stretching is preferably 1 mm or less. It is more preferably 10 xm or less. 1 m or less is more preferable. 0.1 m or less is most preferable.
• FIG. 11 shows Example 12 of the present invention.
• an intermediate linear extruded body 11 is manufactured by extruding a raw material into a square shape in a rectangular shape by extrusion, and manufacturing an intermediate linear extruded body 11 (FIG. 11 (a).
• the intermediate linear extruded body 111 is stretched in the transverse direction or the longitudinal direction in the cross section to form a stretched body 112 (FIG. 11 (b)).
• a stretched body 112 FIG. 11 (b)
• An example is shown.
• the wrought body 1 12 is cut into an appropriate number in parallel with the longitudinal direction to produce a plurality of unit wrought bodies 1 13, 1 13 b, 1 13 c, and 1 113 d.
• the process may proceed to the next step without performing this cutting.
• the unit wrought body is processed into an appropriate shape.
• a ring shape (FIG. 11 (d)
• a spiral shape (FIG. 11 (e)
• a double ring shape (FIG. 11 (f)) are added.
• an appropriate material is embedded in the hollow portions 114a, 114b, 114c, and 114d.
• an electrode material is embedded.
• embedding may be performed simultaneously with processing into a ring shape, not after processing into a ring shape or the like.
• the material may be coated by diving, vapor deposition, plating, etc.
• the material to be coated can be appropriately selected according to the function of the element to be manufactured Semiconductor material, magnetic material, conductive material, insulation Any of inorganic materials and organic materials may be used.
• the longitudinal direction of the molecular chain is oriented so as to be on the left and right in the drawing, which is the wrought direction. for that reason, After processing into a ring shape, the longitudinal direction of the molecular chain is oriented in the circumferential direction as shown in FIG. 11 (g). Therefore, electrons are more likely to hop in the radial direction.
• this opening can be used, for example, as an outlet for an electrode or the like.
• the linear elements can be used as connecting portions between the linear elements. Further, it can be used as a bonding surface with another region.
• the linear body having the ring shape or the like can be used as an intermediate for completing a linear element having a desired sectional area.
• a constricted portion (a portion whose cross-sectional outer diameter is different from other portions) at an appropriate position in the longitudinal direction of the linear body is periodically or aperiodically. 7 may be provided.
• this constriction can be used as a mark for positioning.
• the formation of the constricted portion is not limited to this example, and can be applied to other linear elements.
• the orientation ratio of the molecular chains in the circumferential direction is 50% or more. More preferably, it is 70% or more. Thereby, a linear element having excellent characteristics can be obtained.
• FIG. 12 illustrates an example of a method of manufacturing an element having a cross-sectional shape formed intermittently in the above-described embodiment. In this example, another example of manufacturing in the case of extrusion forming is shown.
• FIG. 12 shows only a part of a region where a circuit element is formed.
• FIG. 12 (a) shows that the semiconductor material is injected only at the timing indicated by a when the semiconductor material is injected.
• the conductive material may be continuously injected, and the semiconductor material may be intermittently injected to simultaneously form the conductive wire and the semiconductor.
• the conductor portion may be formed first, and the semiconductor material may be intermittently injected around the conductor while the conductor is running.
• a linear semiconductor or insulator is formed first, and then a conductor is intermittently coated in the longitudinal direction by vapor deposition, etc. Is provided.
• FIG. 12 (c) first, an organic material is formed in a linear shape. Next, light is intermittently irradiated in the longitudinal direction to cause photopolymerization in the irradiated part. Thus, a portion having a different cross-sectional area in the longitudinal direction can be formed.
• ⁇ is a light-transmitting conductive polymer
• / 3 is an intermediate linear body formed by integrally extruding two layers of a photocurable conductive polymer. When light is applied intermittently while running this intermediate linear body, part a undergoes photocuring. Thereby, a portion having a different cross-sectional area in the longitudinal direction can be formed.
• FIG. 12 (e) is an example using ion irradiation.
• the linear object is run, and an irradiation device is provided on the way.
• the ions are intermittently irradiated from the ion irradiation. Irradiation of ions may be performed from all directions. It may be performed only from a predetermined direction. What is necessary is just to determine suitably according to the cross-sectional area to be formed. Further, the range of the ions may be determined as appropriate.
• a heating device is provided downstream of the ion irradiation device to heat the linear body after ion irradiation.
• the portion irradiated with ions by heating becomes a different tissue.
• the intermediate linear body to be irradiated with ions has an example of a single-layer structure.
• the range of irradiation during ion irradiation is controlled. It is also possible to implant ions only inside. Another structure can be formed in the interior irradiated by the heat treatment.
• Silicon linear body used as an intermediate linear body it is possible to form the S I_ ⁇ 2 regions be implanted 0 ions.
• a so-called BOX buried oxide film
• the BOX is described as a case where another cross-sectional area is formed intermittently, the BOX may be formed over the entire area in the longitudinal direction.
• an integrated circuit is formed by weaving a plurality of linear elements.
• Figure 13 shows an example of an integrated circuit.
• the integrated circuit shown in FIG. 13 is a DRAM type semiconductor memory.
• DRAM memory consists of memory cells arranged vertically and horizontally, and its circuit is shown in Figure 13 (a).
• One cell consists of a MOS FET 209 al and a capacitor 207. Each cell is connected to the bit lines S l, S 2 ... and the word lines G l, G 2 ... I have.
• this cell is composed of a MOS FET linear element 209a1 and a capacitor linear element 207. Prepare as many MOS FET linear elements as there are rows.
• the M ⁇ S FET 209 a 1 has a gate electrode 201, an insulating layer 202, source / drain 204, 205, and a semiconductor layer 203 sequentially formed from the center to the outer periphery.
• An element isolation region 210 is formed in the longitudinal direction.
• the gate electrode 201 penetrates one linear body. That is, one gate electrode is used as a common lead line, and a plurality of MOS FETs 209 a l, 209 b l,... Are formed in one linear body in the longitudinal direction.
• MOS FETs 209 a 2, a 3,... In FIG. 13A are also configured by linear elements.
• the M ⁇ S FET linear element is preferably made of a polymer material. Further, the extraction portion of the source region 204 is projected in the radial direction as shown in FIG. 13 (c). This is to facilitate contact with the bit line S1. Further, as shown in FIG. 13 (d), the drain region 205 is also projected in the radial direction. The projecting position is shifted in the longitudinal direction between the drain and the source.
• an electrode, an insulating layer, and an electrode are sequentially formed from the center outward.
• the bit line S 1 is a bit line and has a linear shape. It is preferable to use a conductive polymer as the material.
• the bit line S 1 206 is wound around the source section 204 to make contact with the source 204.
• This bit line S1 is wound around the source region of the linear MOSFET element constituting each of the MOS FETs 209a2, a3,....
• drain region 205 and the capacitor 207 are connected by a linear conductive polymer 210.
• the capacitor is another linear element, but may be provided at an appropriate position on the linear body on which the MOS FET is formed.
• the number of linear elements used is reduced, and the degree of integration can be further increased.
• they may be directly joined to the M ⁇ SFET linear element using a conductive adhesive or the like.
• the whole may be covered with an insulating material to prevent leakage of the conductive portion.
• a diode may be used instead of the capacitor.
• This example shows an integrated circuit formed by bundling a plurality of linear elements.
• a signal input element is formed on the end face of each linear element, and if it is bundled, various information can be sensed. For example, if an optical sensor, an ion sensor, a pressure sensor, and the like are provided, information corresponding to five human senses can be sensed.
• a sensor corresponding to 100 types of signals is to be formed by a conventional substrate-type semiconductor integrated circuit, it must be manufactured by repeating 100 times of photolithography processes.
• a sensor corresponding to 100 kinds of signals can be easily obtained without repeating the photolithography process.
• a high-density sensor can be obtained.
• a photovoltaic device can be obtained by bundling, twisting, or weaving linear elements having a Pin structure.
• the Pin layer is made of a conductive polymer. It is preferable to add a sensitizer.
• a fabric can be formed by weaving the linear elements, and the cloth can be used as clothing.
• the entire linear element becomes a light receiving area and can receive incident light from an angle of 360 °.
• the photovoltaic element can receive light three-dimensionally and has excellent light receiving efficiency.
• the light capture efficiency is very high. That is, light reflected without being input to a linear element is also input to another linear element by being taken into the fabric and repeating reflection.
• the linear element is preferably formed by extrusion.
• An electrode from each element may be connected to a current collecting electrode, and the current collecting electrode may be provided with a connection terminal.
• clothes having a heating effect can be obtained. Furthermore, clothing having a heating effect can be manufactured by covering the linear heating element with an insulating layer and weaving the linear heating element together with the linear photovoltaic element in a cloth shape.
• the linear element can be planted on a substrate having a desired shape to form a solar cell.
• a solar cell with extremely high light-intake efficiency can be obtained.
• An artificial wig having a power generation function can be obtained by easily implanting a linear photovoltaic element on the surface of a substrate conforming to the shape of a human head.
• an ultrafine linear element In the case where an ultrafine linear element is used, it has a suede effect and can be a leather-like surface. It is also possible to make a back by such a linear element. That is, the bag can have a power generation function.
• Figure 14 shows another example.
• a linear source electrode and a linear drain electrode are brought into contact with appropriate positions of a linear body in which a gate electrode is covered with an insulating layer.
• the organic semiconductor material is applied to a region extending between the contact portion of the source electrode and the contact portion of the drain electrode.
• a linear source or drain electrode may be wound once or plural times around a linear body in which a gate electrode is covered with an insulating layer. Sufficient contact can be obtained by winding. If a constriction is provided in the linear body, it is convenient for positioning when winding or the like is performed.
• the source electrode and the drain electrode can be brought into contact only with an appropriate linear body (point A). In addition, the source and drain electrodes can be connected with another conductor (point B).
• FIG. 16 shows an example of one column as a column, but it is also possible to arrange in a plurality of columns.
• the connection may be made three-dimensionally. Since the linear body, the source electrode, and the drain electrode have flexibility, they can be bent in desired directions at desired positions.
• a desired logic circuit can be assembled by using, for example, a MOSFET linear element as a linear body and taking a three-dimensional connection at a desired position.
• a MOSFET linear element as a linear body
• the current flow path is inevitably long, but if a linear element is used, the current flow path can be extremely short.
• a high-speed logic circuit can be configured.
• an integrated device which is not limited to a shape, has flexibility or flexibility, and can produce various devices having an arbitrary shape.

Landscapes

• Engineering & Computer Science (AREA)
• Materials Engineering (AREA)
• Nanotechnology (AREA)
• Chemical & Material Sciences (AREA)
• Manufacturing & Machinery (AREA)
• Thin Film Transistor (AREA)
• Semiconductor Memories (AREA)
• Electroluminescent Light Sources (AREA)
• Photovoltaic Devices (AREA)
• Non-Volatile Memory (AREA)
• Light Receiving Elements (AREA)
• Bipolar Transistors (AREA)
• Electrodes Of Semiconductors (AREA)
• Insulated Gate Type Field-Effect Transistor (AREA)

Priority Applications (4)

Applications Claiming Priority (2)

Publications (1)

Family

ID=29397338

Family Applications (1)

Country Status (7)

Cited By (5)

Families Citing this family (6)

Citations (5)

Family Cites Families (6)

• 2003
  • 2003-05-02 TW TW092112097A patent/TW200405579A/zh unknown
  • 2003-05-02 KR KR10-2004-7017367A patent/KR20040101569A/ko not_active Withdrawn
  • 2003-05-02 CN CNA038099624A patent/CN1650434A/zh active Pending
  • 2003-05-02 US US10/513,146 patent/US20050218461A1/en not_active Abandoned
  • 2003-05-02 WO PCT/JP2003/005621 patent/WO2003094238A1/ja not_active Ceased
  • 2003-05-02 JP JP2004502358A patent/JP5181197B2/ja not_active Expired - Fee Related
  • 2003-05-02 AU AU2003231391A patent/AU2003231391A1/en not_active Abandoned
• 2010
  • 2010-06-21 JP JP2010140736A patent/JP5272157B2/ja not_active Expired - Fee Related
• 2012
  • 2012-09-24 JP JP2012210002A patent/JP5731460B2/ja not_active Expired - Fee Related

Patent Citations (5)

Also Published As

Similar Documents

Legal Events