TW200405579A - Integrating device - Google Patents
Integrating device Download PDFInfo
- Publication number
- TW200405579A TW200405579A TW092112097A TW92112097A TW200405579A TW 200405579 A TW200405579 A TW 200405579A TW 092112097 A TW092112097 A TW 092112097A TW 92112097 A TW92112097 A TW 92112097A TW 200405579 A TW200405579 A TW 200405579A
- Authority
- TW
- Taiwan
- Prior art keywords
- linear
- elements
- circuit
- linear elements
- cross
- Prior art date
Links
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- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- 229910017050 AsF3 Inorganic materials 0.000 description 1
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- YBGKQGSCGDNZIB-UHFFFAOYSA-N arsenic pentafluoride Chemical compound F[As](F)(F)(F)F YBGKQGSCGDNZIB-UHFFFAOYSA-N 0.000 description 1
- JCMGUODNZMETBM-UHFFFAOYSA-N arsenic trifluoride Chemical compound F[As](F)F JCMGUODNZMETBM-UHFFFAOYSA-N 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
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- 229910010272 inorganic material Inorganic materials 0.000 description 1
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- 239000007769 metal material Substances 0.000 description 1
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- 239000003504 photosensitizing agent Substances 0.000 description 1
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- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/50—Peripheral circuit region structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
- Photovoltaic Devices (AREA)
- Electroluminescent Light Sources (AREA)
- Light Receiving Elements (AREA)
- Bipolar Transistors (AREA)
- Non-Volatile Memory (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002131012 | 2002-05-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200405579A true TW200405579A (en) | 2004-04-01 |
Family
ID=29397338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092112097A TW200405579A (en) | 2002-05-02 | 2003-05-02 | Integrating device |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20050218461A1 (enExample) |
| JP (3) | JP5181197B2 (enExample) |
| KR (1) | KR20040101569A (enExample) |
| CN (1) | CN1650434A (enExample) |
| AU (1) | AU2003231391A1 (enExample) |
| TW (1) | TW200405579A (enExample) |
| WO (1) | WO2003094238A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2855375B2 (ja) | 1991-06-05 | 1999-02-10 | 三菱レイヨン株式会社 | 機械的強度に優れた固体触媒及びその製造法 |
| US7675230B2 (en) * | 2003-07-10 | 2010-03-09 | Ideal Star Inc. | Light-emitting element and device |
| JPWO2005050745A1 (ja) * | 2003-11-20 | 2008-03-06 | 株式会社イデアルスター | 柱状電気素子及び柱状トランジスタ、並びにそれらの製造方法 |
| US7608855B2 (en) * | 2004-04-02 | 2009-10-27 | Spansion Llc | Polymer dielectrics for memory element array interconnect |
| IL169547A0 (en) * | 2005-07-06 | 2007-07-04 | Israel Baumberg | Electroluminescent cable with composite core electrode |
| US8013527B2 (en) * | 2006-04-12 | 2011-09-06 | Lg Chem, Ltd. | Organic light emittig diode unit and method for manufacturing the same |
| US20100159242A1 (en) * | 2008-12-18 | 2010-06-24 | Venkata Adiseshaiah Bhagavatula | Semiconductor Core, Integrated Fibrous Photovoltaic Device |
| US20100154877A1 (en) * | 2008-12-18 | 2010-06-24 | Venkata Adiseshaiah Bhagavatula | Semiconductor Core, Integrated Fibrous Photovoltaic Device |
| FR2941089B1 (fr) * | 2009-01-15 | 2011-01-21 | Commissariat Energie Atomique | Transistor a source et drain filaires |
| JP5339149B2 (ja) * | 2009-09-28 | 2013-11-13 | 独立行政法人産業技術総合研究所 | 繊維状基材及び機能性フレキシブルシート |
| GB2588750A (en) | 2019-10-16 | 2021-05-12 | Norfib As | Wafer |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3745132C2 (de) * | 1987-01-13 | 1998-03-19 | Hoegl Helmut | Photovoltaische Solarzellenanordnung mit mindestens zwei auf Abstand voneinander angeordneten Solarzellen-Elementen |
| JPH06168632A (ja) * | 1992-11-30 | 1994-06-14 | Hitachi Cable Ltd | 難燃性絶縁電線 |
| JPH09102624A (ja) * | 1995-10-06 | 1997-04-15 | Daikyo Denshi Densen Kk | 太陽光発電体 |
| JP3435304B2 (ja) * | 1997-03-13 | 2003-08-11 | 株式会社東芝 | 液晶表示装置 |
| JP2000021727A (ja) * | 1998-07-01 | 2000-01-21 | Asahi Optical Co Ltd | 半導体回路形成装置 |
| JP2000031006A (ja) * | 1998-07-08 | 2000-01-28 | Asahi Optical Co Ltd | 半導体回路形成装置 |
| JP2000294821A (ja) * | 1999-04-01 | 2000-10-20 | Sentaro Sugita | 光発電素子、並びに、ソーラーセル |
| JP2001077445A (ja) * | 1999-06-21 | 2001-03-23 | Sony Corp | 機能一次元構造体の製造方法および機能構造体の製造方法 |
| JP4352621B2 (ja) * | 2001-03-05 | 2009-10-28 | パナソニック株式会社 | 透光性導電性線状材料、繊維状蛍光体及び織物型表示装置 |
| US6437422B1 (en) * | 2001-05-09 | 2002-08-20 | International Business Machines Corporation | Active devices using threads |
| JP2003161844A (ja) * | 2001-11-26 | 2003-06-06 | Japan Science & Technology Corp | 織物構造によるハイブリッド集積回路及びその電子・光集積装置 |
-
2003
- 2003-05-02 KR KR10-2004-7017367A patent/KR20040101569A/ko not_active Withdrawn
- 2003-05-02 JP JP2004502358A patent/JP5181197B2/ja not_active Expired - Fee Related
- 2003-05-02 AU AU2003231391A patent/AU2003231391A1/en not_active Abandoned
- 2003-05-02 TW TW092112097A patent/TW200405579A/zh unknown
- 2003-05-02 WO PCT/JP2003/005621 patent/WO2003094238A1/ja not_active Ceased
- 2003-05-02 CN CNA038099624A patent/CN1650434A/zh active Pending
- 2003-05-02 US US10/513,146 patent/US20050218461A1/en not_active Abandoned
-
2010
- 2010-06-21 JP JP2010140736A patent/JP5272157B2/ja not_active Expired - Fee Related
-
2012
- 2012-09-24 JP JP2012210002A patent/JP5731460B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013042151A (ja) | 2013-02-28 |
| US20050218461A1 (en) | 2005-10-06 |
| WO2003094238A1 (fr) | 2003-11-13 |
| AU2003231391A1 (en) | 2003-11-17 |
| JP5731460B2 (ja) | 2015-06-10 |
| KR20040101569A (ko) | 2004-12-02 |
| JP5181197B2 (ja) | 2013-04-10 |
| JPWO2003094238A1 (ja) | 2005-09-08 |
| CN1650434A (zh) | 2005-08-03 |
| JP5272157B2 (ja) | 2013-08-28 |
| JP2010258464A (ja) | 2010-11-11 |
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