AU2003231391A1 - Integrating device - Google Patents

Integrating device

Info

Publication number
AU2003231391A1
AU2003231391A1 AU2003231391A AU2003231391A AU2003231391A1 AU 2003231391 A1 AU2003231391 A1 AU 2003231391A1 AU 2003231391 A AU2003231391 A AU 2003231391A AU 2003231391 A AU2003231391 A AU 2003231391A AU 2003231391 A1 AU2003231391 A1 AU 2003231391A1
Authority
AU
Australia
Prior art keywords
integrating device
integrating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003231391A
Other languages
English (en)
Inventor
Satoshi Fujimoto
Yasuhiko Kasama
Kenji Omote
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ideal Star Inc
Original Assignee
Ideal Star Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ideal Star Inc filed Critical Ideal Star Inc
Publication of AU2003231391A1 publication Critical patent/AU2003231391A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)
  • Non-Volatile Memory (AREA)
  • Electroluminescent Light Sources (AREA)
  • Photovoltaic Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
AU2003231391A 2002-05-02 2003-05-02 Integrating device Abandoned AU2003231391A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002-131012 2002-05-02
JP2002131012 2002-05-02
PCT/JP2003/005621 WO2003094238A1 (fr) 2002-05-02 2003-05-02 Dispositif integre

Publications (1)

Publication Number Publication Date
AU2003231391A1 true AU2003231391A1 (en) 2003-11-17

Family

ID=29397338

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003231391A Abandoned AU2003231391A1 (en) 2002-05-02 2003-05-02 Integrating device

Country Status (7)

Country Link
US (1) US20050218461A1 (enExample)
JP (3) JP5181197B2 (enExample)
KR (1) KR20040101569A (enExample)
CN (1) CN1650434A (enExample)
AU (1) AU2003231391A1 (enExample)
TW (1) TW200405579A (enExample)
WO (1) WO2003094238A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2855375B2 (ja) 1991-06-05 1999-02-10 三菱レイヨン株式会社 機械的強度に優れた固体触媒及びその製造法
KR101085378B1 (ko) * 2003-07-10 2011-11-21 가부시키가이샤 이디알 스타 발광 소자 및 발광 장치
WO2005050745A1 (ja) * 2003-11-20 2005-06-02 Ideal Star Inc. 柱状電気素子及びその製造方法
US7608855B2 (en) * 2004-04-02 2009-10-27 Spansion Llc Polymer dielectrics for memory element array interconnect
IL169547A0 (en) * 2005-07-06 2007-07-04 Israel Baumberg Electroluminescent cable with composite core electrode
KR100859092B1 (ko) * 2006-04-12 2008-09-17 주식회사 엘지화학 유기발광소자유닛, 유기발광소자유닛의 제조방법 및 유기발광소자유닛을 포함하는 전자장치
US20100154877A1 (en) * 2008-12-18 2010-06-24 Venkata Adiseshaiah Bhagavatula Semiconductor Core, Integrated Fibrous Photovoltaic Device
US20100159242A1 (en) * 2008-12-18 2010-06-24 Venkata Adiseshaiah Bhagavatula Semiconductor Core, Integrated Fibrous Photovoltaic Device
FR2941089B1 (fr) * 2009-01-15 2011-01-21 Commissariat Energie Atomique Transistor a source et drain filaires
JP5339149B2 (ja) * 2009-09-28 2013-11-13 独立行政法人産業技術総合研究所 繊維状基材及び機能性フレキシブルシート
GB2588750A (en) 2019-10-16 2021-05-12 Norfib As Wafer

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3745132C2 (de) * 1987-01-13 1998-03-19 Hoegl Helmut Photovoltaische Solarzellenanordnung mit mindestens zwei auf Abstand voneinander angeordneten Solarzellen-Elementen
JPH06168632A (ja) * 1992-11-30 1994-06-14 Hitachi Cable Ltd 難燃性絶縁電線
JPH09102624A (ja) * 1995-10-06 1997-04-15 Daikyo Denshi Densen Kk 太陽光発電体
JP3435304B2 (ja) * 1997-03-13 2003-08-11 株式会社東芝 液晶表示装置
JP2000021727A (ja) * 1998-07-01 2000-01-21 Asahi Optical Co Ltd 半導体回路形成装置
JP2000031006A (ja) * 1998-07-08 2000-01-28 Asahi Optical Co Ltd 半導体回路形成装置
JP2000294821A (ja) * 1999-04-01 2000-10-20 Sentaro Sugita 光発電素子、並びに、ソーラーセル
JP2001077445A (ja) * 1999-06-21 2001-03-23 Sony Corp 機能一次元構造体の製造方法および機能構造体の製造方法
JP4352621B2 (ja) * 2001-03-05 2009-10-28 パナソニック株式会社 透光性導電性線状材料、繊維状蛍光体及び織物型表示装置
US6437422B1 (en) * 2001-05-09 2002-08-20 International Business Machines Corporation Active devices using threads
JP2003161844A (ja) * 2001-11-26 2003-06-06 Japan Science & Technology Corp 織物構造によるハイブリッド集積回路及びその電子・光集積装置

Also Published As

Publication number Publication date
KR20040101569A (ko) 2004-12-02
JP2013042151A (ja) 2013-02-28
JP5272157B2 (ja) 2013-08-28
CN1650434A (zh) 2005-08-03
TW200405579A (en) 2004-04-01
JP2010258464A (ja) 2010-11-11
US20050218461A1 (en) 2005-10-06
WO2003094238A1 (fr) 2003-11-13
JP5731460B2 (ja) 2015-06-10
JPWO2003094238A1 (ja) 2005-09-08
JP5181197B2 (ja) 2013-04-10

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase