WO2003066486A1 - Dispositif de traitement de substrat de type transfert - Google Patents

Dispositif de traitement de substrat de type transfert Download PDF

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Publication number
WO2003066486A1
WO2003066486A1 PCT/JP2002/000906 JP0200906W WO03066486A1 WO 2003066486 A1 WO2003066486 A1 WO 2003066486A1 JP 0200906 W JP0200906 W JP 0200906W WO 03066486 A1 WO03066486 A1 WO 03066486A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
liquid
chemical
section
chamber
Prior art date
Application number
PCT/JP2002/000906
Other languages
English (en)
Japanese (ja)
Inventor
Hitoshi Tauchi
Haruhiko Koizumi
Original Assignee
Sumitomo Precision Products Co., Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Precision Products Co., Ltd filed Critical Sumitomo Precision Products Co., Ltd
Priority to KR10-2004-7011860A priority Critical patent/KR20040078684A/ko
Priority to PCT/JP2002/000906 priority patent/WO2003066486A1/fr
Priority to JP2003565876A priority patent/JP4044047B2/ja
Priority to CNA02808277XA priority patent/CN1503758A/zh
Priority to TW092102118A priority patent/TW593090B/zh
Publication of WO2003066486A1 publication Critical patent/WO2003066486A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece

Definitions

  • the present invention relates to a transfer type substrate processing apparatus suitably used for manufacturing a glass substrate for a liquid crystal display device.
  • the glass substrate used for the liquid crystal display device is the material of the glass substrate
  • the substrate processing equipment is roughly divided into dry type and pet type, and wet type is divided into batch type and single wafer type. Further, the single wafer type is subdivided into a fixed position rotation type and a transport type by a roller transport or the like.
  • the transport type has a basic structure for supplying a processing liquid to the surface of the substrate while transporting the substrate in the horizontal direction. ⁇ Used for separation processing.
  • the substrate sequentially passes through a receiving section (loader section), a liquid avoiding section, a chemical processing section, a cleaning section, and a liquid removing section.
  • a chemical such as an etching liquid or a separation liquid is discharged from a nozzle disposed above the substrate transfer line, and the substrate passes through the chemical to supply the chemical to the entire surface of the substrate.
  • the surface of the substrate is selectively chemically treated.
  • the upstream side of the chemical processing section that is, the liquid avoiding section disposed between the chemical processing section and the receiving section, is complicated with the chemical used in the downstream chemical processing section, and furthermore the chemical atmosphere in the chemical processing section.
  • Upstream receiver with a It is a so-called buffer (absorber) intended to prevent intrusion into the receiving part.
  • the total length of the liquid avoiding section is set to be larger than the length of the substrate so that the substrate can be completely accommodated.
  • shutters are provided at the substrate entrance and substrate exit provided on the front and rear walls. Then, when the substrate enters the liquid avoidance section with the inlet opened and the outlet closed, the substrate stops once and the inlet is closed. After that, the outlet is opened, and the substrate advances from the liquid avoidance part to the chemical treatment part on the downstream side.
  • the substrate completely exits the liquid avoidance area and closes the shutter at the exit and then starts discharging the chemical liquid in the chemical liquid processing section, the intrusion of the chemical liquid into the liquid avoidance section is suppressed, and contamination in the receiving section is also suppressed.
  • the start of chemical solution discharge is delayed, and the chemical solution treatment section becomes longer, which causes a large problem in throughput and equipment scale.
  • An object of the present invention is to provide a method for controlling the downstream side from the stage in which a substrate passes through an outlet of a liquid avoiding section.
  • An object of the present invention is to provide a transport-type substrate processing apparatus that can effectively prevent chemical liquid contamination in an upstream receiving section even when a chemical liquid discharging operation is started in a chemical liquid processing section. Disclosure of the invention
  • a transport type substrate processing apparatus of the present invention transports a substrate in a horizontal direction, passes the substrate through a plurality of processing units, and performs a chemical solution processing in at least one of the plurality of processing units.
  • a transport-type substrate processing apparatus provided with a liquid avoiding section upstream of the chemical solution treating section, wherein the inside of the liquid avoiding section is divided into a plurality of chambers in the substrate transport direction by at least one partition wall, and the most upstream side in the liquid avoiding section Exhaust means for sucking negative pressure in at least one room except the room is provided.
  • At least one of the plurality of chambers in the liquid avoiding section except for the most upstream chamber is sucked to the negative pressure.
  • the downstream chamber is suctioned to a negative pressure.
  • at least one of the two or more rooms excluding the most upstream room is sucked to the negative pressure.
  • the chamber at the most upstream side in the liquid avoiding section is controlled at normal pressure or positive pressure. It is preferable that the liquid avoiding section is divided into three or more chambers in the substrate transfer direction, and at least one of the liquid avoiding sections except for the most upstream chamber and the most downstream chamber is suctioned to a negative pressure.
  • it is effective not only to control the specific chamber to a negative pressure, but also to gradually reduce the pressure from the most upstream chamber to the most downstream chamber in the liquid avoidance section.
  • the liquid avoidance section should be 3 or more in the substrate transport direction.
  • the partition wall position is set so that when the front end of the substrate reaches the chemical discharge start position in the downstream chemical processing section, the rear end of the substrate exits the most upstream chamber in the liquid avoidance section. It is preferable to set the partition wall position such that the rear end of the substrate enters the most downstream chamber in the liquid avoidance section when the front end of the substrate reaches the chemical solution discharge start position in the chemical processing section. preferable.
  • the total length of the liquid avoiding section is set to be a dog rather than the length of the substrate, and It is preferable to equip the substrate entrance and the substrate exit with a shutter.
  • FIG. 1 is a schematic side view of a substrate processing apparatus showing one embodiment of the present invention
  • FIG. 2 is a schematic plan view of a liquid avoiding section.
  • the substrate processing apparatus of the present embodiment is an etching apparatus used for manufacturing a glass substrate for a liquid crystal display.
  • the substrate processing apparatus includes a receiving section 20, a liquid avoiding section 30, a chemical processing section 40, a cleaning section 50, and a liquid removing section arranged in order in the transport direction of the substrate 10. 60.
  • Each section is equipped with a number of transport rollers 21, 31, 31, 41, 51, 61 for supporting the substrate 10 horizontally and transporting it horizontally.
  • the liquid avoiding section 30 as a buffer (buffer section) provided between the receiving section 20 and the chemical processing section 40 has two partition walls 3.
  • the two chambers 33a, 33b, and 33c are divided into three chambers 33a, 33b, and 33c in the transport direction of the substrate 10 by 2a and 32b.
  • the entrance provided in the partition wall with the receiving part 20 on the upstream side is equipped with an openable / closable shutter 34a.
  • an opening / closing shutter 34 b is provided at an outlet provided in a partition wall with the chemical solution processing section 40 on the downstream side.
  • the partition walls 32a and 32b are provided with slit-like passage ports through which the substrate 10 passes.
  • the first chamber 33a on the upstream side adjacent to the receiving part 20 on the upstream side is a clean room and is configured to be maintained at a slightly positive pressure.
  • the third chamber 33 c adjacent to the chemical processing section 40 on the downstream side is In order to discharge a chemical solution (etching solution in this case) entering from the chemical solution processing section 40, a drain port 36 is provided on the bottom surface.
  • the total length L 1 of the liquid avoiding portion 20 is larger than the length L 2 of the substrate 10. Further, the distance L 3 from the second partition 32 b to the chemical solution discharge start position in the chemical solution processing section 40 on the downstream side is set to be longer than the length L 2 of the substrate 10.
  • the chemical processing section 40 is provided above the upper surface of the substrate 10 with a nozzle unit 42 for supplying a chemical (an etching liquid in this case) from above to a position above the transport line of the substrate 10.
  • the cleaning unit 50 includes a first shower unit 52 for spraying pure water from above on the upper surface of the substrate 10 in a shower shape, and a second shower unit for spraying pure water from below onto the lower surface of the substrate 10.
  • the shower unit 53 is provided with a transfer line for the substrate 10 therebetween.
  • the liquid draining section 60 is provided with a pair of upper and lower slit nozzles 62, 63 for air knives arranged so as to sandwich the transfer line of the substrate 10 from above and below. ing.
  • the upper slit nozzle 62 removes water droplets and moisture from the cleaned upper surface of the substrate 10 by blowing air over the entire surface of the substrate 10 in a thin film shape.
  • the lower slit nozzle 63 removes water droplets and moisture from the cleaned lower surface of the substrate 10 by blowing air in a thin film shape over the entire lower surface of the substrate 10.
  • the upper and lower slit nozzles 62, 63 are tilted upstream in the transport direction of the substrate 10 in a side view and sideways in a plan view in order to increase the efficiency of removing water droplets and moisture.
  • the substrate 10 passes through the receiving section 20, the liquid avoiding section 30, the chemical processing section 40, the cleaning section 50, and the liquid removing section 60 in this order, and
  • the upper surface of the substrate 10 is subjected to a chemical treatment (here, an etching process), and the upper and lower surfaces are cleaned and then dried.
  • a chemical treatment here, an etching process
  • the shutter 34 a separating the two parts is operated in the opening direction, and the entrance is opened. At this time, the central second chamber 33b is exhausted to a negative pressure. Further, the shutter 34b that separates the liquid avoiding section 40 and the chemical processing section 40 is operated in the closing direction, and the outlet is closed. In this state, the substrate 10 enters the liquid avoiding section 30.
  • the substrate 10 stops temporarily, during which the shutter 34a first closes, and then the shutter 34b opens. This avoids a situation in which the receiving section 20 and the chemical processing section 40 are directly connected.
  • the chemical liquid that enters the third chamber 33c is diluted by the pure water stored in the third chamber 33c, and is sequentially discharged to the outside through the drain port 36. Controlled at positive pressure, the second chamber 33b is sucked at negative pressure. Therefore, the force of the vapor of the chemical into the second chamber 33b directly from the third chamber 33c or from the chemical processing section 40 via the third chamber 33c, and at the same time, the first chamber 33a An airflow from the second chamber 33b is also formed. For this reason, a situation in which the chemical solution or its vapor enters the first chamber 33a is avoided. That is, the first chamber 33a in contact with the receiving part 20 is always a clean zone from both sides of liquid and gas. For this reason, there is no danger of the chemical atmosphere entering the receiving part 20.
  • the liquid avoiding section 30 disposed downstream of the receiving section 20 is divided into three chambers, and the central second chamber 33 b is sucked to a negative pressure and transmitted along the upper surface of the substrate 10.
  • a clean area that is not always contaminated with the chemical solution can be kept in the liquid avoidance section 30.
  • And can be formed in a portion adjacent to. This allows the chemical solution processing unit 40 to start discharging the chemical solution while the substrate 10 passes through the outlet of the liquid avoidance unit 30 without waiting for the substrate 10 to escape from the liquid avoidance unit 30. Therefore, it is possible to completely prevent contamination by the chemical solution in the receiving portion 20.
  • a space exceeding the length of the substrate 10 is required in front of the nozzle unit 42 in 40, and the apparatus becomes large. Also, the processing time becomes longer,
  • the substrate processing apparatus of the present invention transports a substrate in the horizontal direction, passes the substrate through the plurality of processing units, performs the chemical processing in at least one of the plurality of processing units, and performs the chemical processing in the chemical processing unit.
  • the transport type substrate processing apparatus provided with a liquid avoiding section on the upstream side, the inside of the liquid avoiding section is divided into a plurality of chambers in a substrate transport direction by a plurality of partition walls, and at least one chamber except the most upstream chamber in the liquid avoiding section is provided.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Weting (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Liquid Crystal (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

Selon l'invention, il est possible d'éviter une contamination chimique au niveau de l'unité de réception située en amont, même si l'évacuation de produit chimique débute dans une unité de traitement chimique se trouvant en aval, lors de l'étape au cours de laquelle un substrat (10) traverse l'orifice de sortie d'une unité de non-contamination chimique (30). Cette unité de non-contamination chimique (30) est divisée en chambres (33a, 33b, 33c) disposées dans le sens de transfert du substrat, par une moins une paroi séparatrice (32a, 32b). Dans au moins une chambre (33b), excepté la chambre (33a) située à l'extrémité amont de l'unité de non-contamination chimique (30), on crée une pression négative. La pression de cette chambre (33a) est régulée pour atteindre une valeur normale ou positive. Les positions desdites parois séparatrices sont déterminées de façon que l'extrémité arrière du substrat (10) sorte de la chambre (33a) lorsque l'extrémité avant de ce substrat (10) atteint le point de départ de l'évacuation de produit chimique dans l'unité de traitement chimique côté aval. De préférence, les positions des parois séparatrices sont déterminées de façon que l'extrémité arrière du substrat pénètre dans la chambre (33c) à l'extrémité aval de l'unité de non-contamination chimique (30), lorsque l'extrémité avant de ce substrat (10) atteint le point de départ d'évacuation de produit chimique.
PCT/JP2002/000906 2002-02-04 2002-02-04 Dispositif de traitement de substrat de type transfert WO2003066486A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR10-2004-7011860A KR20040078684A (ko) 2002-02-04 2002-02-04 반송식 기판 처리 장치
PCT/JP2002/000906 WO2003066486A1 (fr) 2002-02-04 2002-02-04 Dispositif de traitement de substrat de type transfert
JP2003565876A JP4044047B2 (ja) 2002-02-04 2002-02-04 搬送式基板処理装置
CNA02808277XA CN1503758A (zh) 2002-02-04 2002-02-04 传送式基板处理装置
TW092102118A TW593090B (en) 2002-02-04 2003-01-30 Substrate-treatment equipment of transporting type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2002/000906 WO2003066486A1 (fr) 2002-02-04 2002-02-04 Dispositif de traitement de substrat de type transfert

Publications (1)

Publication Number Publication Date
WO2003066486A1 true WO2003066486A1 (fr) 2003-08-14

Family

ID=27677633

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/000906 WO2003066486A1 (fr) 2002-02-04 2002-02-04 Dispositif de traitement de substrat de type transfert

Country Status (5)

Country Link
JP (1) JP4044047B2 (fr)
KR (1) KR20040078684A (fr)
CN (1) CN1503758A (fr)
TW (1) TW593090B (fr)
WO (1) WO2003066486A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4817802B2 (ja) * 2005-10-31 2011-11-16 東京応化工業株式会社 搬送処理装置
WO2011010584A1 (fr) * 2009-07-23 2011-01-27 シャープ株式会社 Procédé et dispositif de gravure humide
JPWO2012035722A1 (ja) * 2010-09-14 2014-01-20 古河機械金属株式会社 処理装置
JP6732213B2 (ja) * 2016-11-16 2020-07-29 日本電気硝子株式会社 ガラス基板の製造方法
CN109920724A (zh) * 2019-01-30 2019-06-21 矽品科技（苏州）有限公司 一种快速去除基板有机可焊性保护剂和氧化物的方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06208988A (ja) * 1992-02-21 1994-07-26 Chuo Riken:Kk ウェット処理装置
JP2001267256A (ja) * 2000-03-22 2001-09-28 Semiconductor Energy Lab Co Ltd 基板処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06208988A (ja) * 1992-02-21 1994-07-26 Chuo Riken:Kk ウェット処理装置
JP2001267256A (ja) * 2000-03-22 2001-09-28 Semiconductor Energy Lab Co Ltd 基板処理装置

Also Published As

Publication number Publication date
TW200302805A (en) 2003-08-16
TW593090B (en) 2004-06-21
KR20040078684A (ko) 2004-09-10
CN1503758A (zh) 2004-06-09
JPWO2003066486A1 (ja) 2005-05-26
JP4044047B2 (ja) 2008-02-06

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