WO2003062506A1 - Materiau metallique composite et son procede de production, materiau metallique grave et son procede de production, et condensateur electrolytique - Google Patents
Materiau metallique composite et son procede de production, materiau metallique grave et son procede de production, et condensateur electrolytique Download PDFInfo
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- WO2003062506A1 WO2003062506A1 PCT/JP2003/000652 JP0300652W WO03062506A1 WO 2003062506 A1 WO2003062506 A1 WO 2003062506A1 JP 0300652 W JP0300652 W JP 0300652W WO 03062506 A1 WO03062506 A1 WO 03062506A1
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- metal material
- composite metal
- material according
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- producing
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- 239000007769 metal material Substances 0.000 title claims abstract description 282
- 239000002131 composite material Substances 0.000 title claims abstract description 180
- 239000003990 capacitor Substances 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 73
- 229920000642 polymer Polymers 0.000 claims abstract description 156
- 239000000463 material Substances 0.000 claims abstract description 125
- 238000005530 etching Methods 0.000 claims abstract description 100
- 239000010409 thin film Substances 0.000 claims abstract description 99
- 150000001875 compounds Chemical class 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000003960 organic solvent Substances 0.000 claims abstract description 37
- 230000002209 hydrophobic effect Effects 0.000 claims abstract description 24
- 238000001035 drying Methods 0.000 claims abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 97
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 97
- 239000011148 porous material Substances 0.000 claims description 87
- 239000000126 substance Substances 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 37
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 24
- 238000011282 treatment Methods 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 238000011049 filling Methods 0.000 claims description 18
- 239000010408 film Substances 0.000 claims description 16
- 239000007772 electrode material Substances 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 238000007654 immersion Methods 0.000 claims description 11
- 238000007747 plating Methods 0.000 claims description 10
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 claims description 10
- 229940005642 polystyrene sulfonic acid Drugs 0.000 claims description 10
- 238000007740 vapor deposition Methods 0.000 claims description 8
- 238000004090 dissolution Methods 0.000 claims description 5
- 238000009833 condensation Methods 0.000 claims description 4
- 230000005494 condensation Effects 0.000 claims description 4
- 150000003839 salts Chemical class 0.000 claims description 3
- 125000005210 alkyl ammonium group Chemical group 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 238000001338 self-assembly Methods 0.000 claims description 2
- 239000000243 solution Substances 0.000 description 33
- 238000006243 chemical reaction Methods 0.000 description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 9
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 9
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- 238000000866 electrolytic etching Methods 0.000 description 6
- 239000011888 foil Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000003792 electrolyte Substances 0.000 description 4
- QGJOPFRUJISHPQ-UHFFFAOYSA-N Carbon disulfide Chemical compound S=C=S QGJOPFRUJISHPQ-UHFFFAOYSA-N 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 125000005131 dialkylammonium group Chemical group 0.000 description 3
- 239000008151 electrolyte solution Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 229910052745 lead Inorganic materials 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- -1 polypropylene Polymers 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229920000831 ionic polymer Polymers 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 239000003208 petroleum Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000007779 soft material Substances 0.000 description 2
- 239000011573 trace mineral Substances 0.000 description 2
- 235000013619 trace mineral Nutrition 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- LNAZSHAWQACDHT-XIYTZBAFSA-N (2r,3r,4s,5r,6s)-4,5-dimethoxy-2-(methoxymethyl)-3-[(2s,3r,4s,5r,6r)-3,4,5-trimethoxy-6-(methoxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6r)-4,5,6-trimethoxy-2-(methoxymethyl)oxan-3-yl]oxyoxane Chemical compound CO[C@@H]1[C@@H](OC)[C@H](OC)[C@@H](COC)O[C@H]1O[C@H]1[C@H](OC)[C@@H](OC)[C@H](O[C@H]2[C@@H]([C@@H](OC)[C@H](OC)O[C@@H]2COC)OC)O[C@@H]1COC LNAZSHAWQACDHT-XIYTZBAFSA-N 0.000 description 1
- 102000009027 Albumins Human genes 0.000 description 1
- 108010088751 Albumins Proteins 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 102000008186 Collagen Human genes 0.000 description 1
- 108010035532 Collagen Proteins 0.000 description 1
- 108010010803 Gelatin Proteins 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229920006318 anionic polymer Polymers 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 235000010338 boric acid Nutrition 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005097 cold rolling Methods 0.000 description 1
- 229920001436 collagen Polymers 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 229960000633 dextran sulfate Drugs 0.000 description 1
- PFKRTWCFCOUBHS-UHFFFAOYSA-N dimethyl(octadecyl)azanium;chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCCCC[NH+](C)C PFKRTWCFCOUBHS-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003759 ester based solvent Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 238000005098 hot rolling Methods 0.000 description 1
- 125000001165 hydrophobic group Chemical group 0.000 description 1
- 229920001600 hydrophobic polymer Polymers 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- GUBGYTABKSRVRQ-QKKXKWKRSA-N lactose group Chemical group OC1[C@H](O)[C@@H](O)[C@H](O[C@H]2[C@H](O)[C@@H](O)[C@@H](O)[C@H](O2)CO)[C@H](O1)CO GUBGYTABKSRVRQ-QKKXKWKRSA-N 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 229940057995 liquid paraffin Drugs 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 235000010981 methylcellulose Nutrition 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000007523 nucleic acids Chemical class 0.000 description 1
- 102000039446 nucleic acids Human genes 0.000 description 1
- 108020004707 nucleic acids Proteins 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 235000011007 phosphoric acid Nutrition 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920000747 poly(lactic acid) Polymers 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000004626 polylactic acid Substances 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 235000015424 sodium Nutrition 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/055—Etched foil electrodes
Definitions
- the present invention relates to a composite metal material in which a polymer thin film is formed on the surface of a metal material substrate, a method for producing the same, an etched metal material in which an etching pit is formed on the composite metal material, a method for producing the same, and It relates to an electrolytic capacitor.
- aluminum is used to include both aluminum and its alloys.
- the aluminum foil used for the electrode of the electrolytic capacitor is etched to increase the area coverage and improve the capacitance.
- Various treatments have been performed on the wood. For example, control of (100) crystal orientation, adjustment of composition by adding trace elements such as Cu and Pb to aluminum, degreasing and cleaning before final annealing, and crystalline oxidation in final annealing Film formation treatment (Japanese Patent Publication No. 58-34925, Japanese Patent Application Laid-Open No. 3-122620, etc.).
- the present invention generates etching pits with high density and uniformity, and can perform etching in a state in which the pits are used as a starting point in a deep state and in a state where coupling is unlikely to occur in a tunnel. It is an object of the present invention to provide a composite metal material capable of increasing the capacitance and a method for manufacturing the same, as well as a metal material etched and a method for manufacturing the same.
- a first composite metal material of the present invention has the following configuration.
- a composite metal material comprising a polymer thin film having a fine pattern formed on at least one surface of a metal material substrate by self-organization.
- the polymer thin film is a film formed by drying a solution of a polymer compound in a hydrophobic organic solvent.
- the second composite metal material of the present invention has the following configuration.
- a composite metal material comprising a large number of fine spots composed of substances having higher conductivity than oxides of the metal material substrate arranged on at least one surface of the metal material substrate.
- valve metal is aluminum.
- composite metal material is an aluminum material for an electrolytic capacitor electrode.
- a first method for producing a composite metal material of the present invention is a method capable of suitably producing the first composite metal material of the present invention, and has the following configuration.
- a method for producing a composite metal material in which a polymer thin film having a fine pattern is formed by self-assembly on at least one surface of a metal material base material, wherein the polymer thin film is treated with a hydrophobic polymer A method for producing a composite metal material, which is formed by drying an organic solvent solution.
- a solution of a polymer compound in a hydrophobic organic solvent is cast on the surface of the metal material substrate, and the organic solvent is evaporated and dew is formed on the solution surface.Furthermore, fine water droplets generated by the dew are removed. 17.
- a solution of a polymer compound in a hydrophobic organic solvent is cast on the surface of another base material, the organic solvent is evaporated, and dew is condensed on the surface of the solution, and fine water droplets generated by the condensation are evaporated. As a result, a polymer thin film in which many pores are arranged is formed,
- the amphiphilic polymer compound comprises polystyrene sulfonic acid and a long-chain dialki 21.
- a method for producing a second composite metal material according to the present invention is a method capable of suitably producing the second composite metal material according to the present invention, and has the following configuration.
- a method for producing a composite metal material which comprises removing the composite metal material.
- the filling of a substance having higher conductivity than the oxide of the metal material base includes plating, 25.
- the first etched metal material of the present invention is obtained by etching the first composite metal material of the present invention, and has the following configuration.
- the second etched metal material of the present invention is obtained by etching the second composite metal material of the present invention, and has the following configuration.
- the etched metal material is an etched electrolytic capacitor. 36.
- the etched metal material according to the above item 36 which is an aluminum material for electrodes.
- a first method for producing an etched metal material of the present invention is a method capable of suitably producing the first etched metal material of the present invention, and has the following configuration.
- the composite metal material described in 1 to 9 above is subjected to an initial etching process without removing the polymer thin film to generate an etching pit, and then the polymer thin film is removed.
- the second method for producing an etched metal material of the present invention is a method capable of suitably producing the second etched metal material of the present invention, and has the following configuration.
- the electrolytic capacitor of the present invention uses the first or second etched metal material of the present invention as an electrode material, and has the following configuration.
- An electrolytic capacitor characterized by using the etched metal material described in 36 or 37 above as an electrode material.
- an etching pit that is uniformly distributed at high density based on the fine pattern is formed, and the surface area is increased.
- the fine pattern has a pore structure in which a large number of pores are arranged, a particularly high-density and uniform etching pit is formed, and the diameter of the pores is 0.01 to 50 ⁇ m. In particular, or when the interval between the pores is 1 to 50, a particularly high surface area can be achieved.
- the high-conductivity substance becomes a nucleus of an etching pit, so that the density is high and uniform. Etching pits are formed which are distributed in the pits.
- the metal material base is made of a valve metal
- it can be used as an electrode material of an electrolytic capacitor.
- the valve action metal is aluminum, which can be used as an aluminum material for an electrolytic capacitor electrode.
- the second composite metal material of the present invention when an etching treatment is performed, fine spots due to a substance having higher conductivity than the oxide of the metal material base become the nuclei of the etching pits, so that high density and uniformity are obtained. Etching pits are formed, and the surface area is increased.
- the diameter of the fine spots is from 0.01 to 50 m, or when the distance between the fine spots is from 1 to 50 m, a particularly high surface area can be achieved.
- the metal material base is made of a valve metal
- it can be used as an electrode material of an electrolytic capacitor.
- the valve metal is aluminum and the electrolytic capacitor It can be used as an aluminum material for sensor electrodes.
- the above-described first composite metal material can be suitably produced.
- a hydrophobic organic solvent solution of a polymer compound is directly cast on the surface of the metal material substrate and dried, a polymer thin film in which a large number of pores are arranged is adhered to the metal material substrate.
- the formation of the polymer thin film and the lamination on the metal material substrate can be performed simultaneously. It can also be produced by bonding a polymer thin film separately formed on another substrate to the required metal foil substrate surface.
- the nuclei of etching pits can be formed by filling a substance having high properties. The filling of the highly conductive substance can be easily performed by any of plating, vapor deposition, and immersion.
- the polymer compound is an amphiphilic polymer compound such as an ionic complex of polystyrenesulfonic acid and a long-chain dialkylammonium salt, a polymer thin film having a pore structure can be formed.
- the concentration of the solution of the polymer compound in the hydrophobic organic solvent is 0.01 to 10% by mass, a fine pattern and a pore structure having a required strength and a stable shape can be formed. .
- the above-described second composite metal material can be suitably produced.
- a hydrophobic organic solvent solution of a polymer compound is directly cast on the surface of the metal material substrate and dried, a polymer thin film having a large number of pores arranged thereon is adhered to the metal material substrate. It can be formed into a state, polymer thin film deposition and gold Lamination on the base material substrate can be performed simultaneously. It can also be produced by bonding a polymer thin film separately formed on another base material to the surface of the required metal foil base, and is more conductive than the oxide of the metal base material in the pores. Filling with a highly volatile substance can be easily performed by any of plating, vapor deposition, and immersion.
- the polymer compound is an amphiphilic polymer compound such as an ionic complex of polystyrenesulfonic acid and a long-chain dialkylammonium salt, a polymer thin film having a pore structure can be formed.
- the concentration of the solution of the polymer compound in the hydrophobic organic solvent is 0.01 to 10% by mass, a fine pattern and a pore structure having a required strength and a stable shape can be formed.
- the polymer thin film after filling with the highly conductive substance can be easily removed by dissolution, and fine spots of the highly conductive substance based on the fine pattern can be formed on the surface of the metal material base material.
- the first etched metal material of the present invention is formed by forming etching pits based on a fine pattern with respect to the first composite metal material, as described above, high density and uniformity are obtained. A distributed etching pit is formed, and the surface area is sufficiently enlarged.
- the capacitance can be increased.
- the second etched metal material of the present invention is obtained by forming an etching pit based on fine spots with respect to the second composite metal material, as described above, it has a high density and uniformity. Etching pits are formed, and the surface area is sufficient It has been expanded to.
- the capacitance can be increased.
- One of the manufacturing methods of the first etched metal material is to form an etching pit by performing an etching treatment on the first composite metal material without removing the polymer thin film.
- a etched metal material in which etching pits are uniformly distributed at high density can be obtained.
- Another method of producing the first etched metal material is to perform an initial etching process without removing the polymer thin film to generate etching pits, and then remove the polymer thin film. Further, since the etching pits are grown by performing an etching process, an etched metal material in which the etching pits are uniformly distributed at a high density can be obtained.
- an etched metal material when the etched metal material is an etched aluminum material for an electrolytic capacitor electrode, an electrode material capable of high capacitance is provided by an enlarged surface area. can get.
- an etching process is performed on the second composite metal material to form etching pits based on fine spots. A uniformly distributed etched metal material is obtained.
- the etched metal material when the etched metal material is an etched aluminum material for an electrolytic capacitor electrode, an electrode material capable of high capacitance due to an enlarged surface area is used. can get.
- the electrolytic capacitor of the present invention since the above-described etched metal material is used as an electrode material, a high capacitance can be obtained, and the size and performance of the electrolytic capacitor can be reduced. Miniaturization of embedded electronic devices And higher performance. BRIEF DESCRIPTION OF THE FIGURES
- FIG. 1 (A) is a longitudinal sectional view schematically showing one embodiment of the first composite metal material of the present invention
- FIG. 1 (B) is a cross section taken along line 1B_1B in FIG. 1 (A).
- FIG. 2 (A) is a longitudinal sectional view schematically showing another embodiment of the first composite metal material of the present invention
- FIG. 2 (B) is a sectional view taken along line 2B-2B in FIG. 2 (A). It is sectional drawing.
- FIG. 3 (A) is a longitudinal sectional view schematically showing one embodiment of the second composite metal material of the present invention
- FIG. 3 (B) is a cross section taken along line 3B-3B in FIG. 3 (A).
- FIGS. 1A and 1B are schematic cross-sectional views of one embodiment of the first composite metal material of the present invention.
- the polymer thin film (11) laminated on the surface of the metal material substrate (10) is a film formed by self-organization of a polymer compound, and is formed at the time of film formation. It has a fine pattern.
- the polymer thin film (11) only needs to be laminated on at least one surface of the metal material base (10).
- the metal material base (10) when used as an aluminum material for an electrolytic capacitor electrode, in order to increase the surface area as much as possible. It is preferred to be laminated on both sides.
- the polymer thin film (11) is formed by drying a solution in which a polymer compound is dissolved in a hydrophobic organic solvent (hereinafter abbreviated as polymer solution). For example, when a polymer solution is cast on the substrate surface and dried, the polymer compound self-organizes on the substrate to form a film having a fine pattern.
- polymer solution a solution in which a polymer compound is dissolved in a hydrophobic organic solvent
- Examples of the fine pattern include a pore structure in which a large number of pores (12) are arranged as shown in FIG. 1 (B).
- the pores (12) are used as a channel for introducing an etching solution to the surface of the metal material base (10). You.
- FIGS. 2A and 2B show another embodiment of the first composite metal material of the present invention.
- a substance having higher conductivity than the oxide of the metal material base material (10) hereinafter, abbreviated as “highly conductive substance”
- the highly conductive substance acts as an etching nucleus.
- the polymer thin film (11) having a pore structure as the fine pattern is formed, for example, through the following process.
- FIGS. 1 (B) and 2 (B) illustrate a polymer thin film (11) in which a number of hexagonal pores (12) are formed in a fine state.
- the pores often have a shape close to a hexagon or a circle.
- the regular pore structure does not mean a strict geometric regular structure, but means that the structure has regularity and is not a random structure. Therefore, those having some irregularities in the pore shape, pore diameter, pore spacing, etc. are also included in the regular pore structure. This is because even if there is some disturbance, a high-density and uniform etching pit described later is formed without any problem.
- the polymer thin film (11) casts a polymer solution directly on the surface of the metal material substrate (10), It is possible to form a close contact in 10). That is, the formation of the polymer thin film (11) and the metal material base The lamination to the material (10) can be performed simultaneously. Alternatively, the polymer thin film (11) separately formed on another base material is taken out and joined to the metal material base material (10) to produce the thin film.
- the base material is not only metal, but also solid materials such as inorganic materials such as glass and silicon wafers, organic polymer materials having excellent organic solvent resistance such as polypropylene, polyethylene and polyetherketone, and the like. Liquids such as water, liquid paraffin, and liquid polyether can be used. Of these other substrates, water is preferred because it is easy to remove the polymer thin film and has excellent pore structure retention.
- the polymer compound forming the polymer thin film is not limited.
- suitable polymer compounds include an amphiphilic polymer compound having a hydrophobic group and a hydrophilic group, and a homopolymer of one kind of amphipathic molecule or a copolymer of two or more kinds of amphipathic molecules But it is good. Further, a copolymer with a molecule other than the amphiphilic polymer may be used, and a surfactant may be present.
- amphiphilic polymer compound an ionic complex of polystyrene sulfonic acid and a long-chain dialkyl ammonium salt, polyethylene Glycol / polypropylene glycol block copolymer, acrylamide polymer as main chain skeleton, amphiphilic polymer compound having both dodecyl group as hydrophobic side chain and lactose group or carboxyl group as hydrophilic side chain, or Ionic complex of anionic polymers such as palin-dextran sulfate and nucleic acids (DNA and RNA) with long-chain alkylammonium salts, and amphiphilicity based on water-soluble proteins such as gelatin, collagen, and albumin It is preferable to use a polymer or the like.
- polystyrene phosphinic acid examples include polystyrene phosphinic acid, polystyrene sulfonic acid, polylactic acid, and polycarbonate.
- hydrophobic organic solvent for dissolving the polymer compound examples include a halogen-based solvent such as black form, an ester-based solvent such as ethyl acetate, a water-insoluble ketone, and carbon disulfide.A mixed solvent thereof is also used. it can.
- concentration of the polymer compound in the polymer solution is preferably from 0.01 to 10% by mass. If the amount is less than 0.01% by mass, the strength of the polymer thin film (11) is insufficient. If the amount exceeds 10% by mass, it is difficult to form the pores (12) and maintain a stable shape.
- the preferred concentration is 0.05-5% by weight.
- the film formation environment is preferably a high humidity atmosphere in order to evaporate the organic solvent and condense and evaporate minute water droplets. Specifically, it is preferable to carry out the reaction in the air at a relative humidity of 50 to 95% and a temperature of 10 to 25 ° C.
- the dimensions of the pores (12) are preferably from 0.01 to 50 m in diameter (D), and the dimensions are as follows:
- the composite metal material (1) is used as an aluminum material for an electrolytic capacitor electrode to be subjected to an etching treatment. It is suitable when the etching pit is uniformly formed to efficiently increase the area coverage.
- a particularly preferred diameter (D) of the pore (12) is 0.1 to 5 m.
- the interval (P) between the pores (12) is preferably from 1 to 50 m. If it is less than 1 m, it may be connected to adjacent pits during etching, and if it exceeds 50 m, it is difficult to increase the number of pits.
- a particularly preferred distance between the pores (12) is 1 to 15 m.
- the thickness (T) of the polymer thin film (11) is formed to be about 100 nm to 2 m, and when it is used as an aluminum material for an electrolytic capacitor electrode, it is preferably 0.5 to l ⁇ m.
- the metal material substrate (10) constituting the composite metal materials (1) and (2) is appropriately selected according to the purpose, regardless of the type and thickness of the metal.
- Examples of the type of metal include a valve metal used as an electrode material of an electrolytic capacitor.
- valve metal include aluminum, tantalum, magnesium, titanium, niobium, zirconium, zinc, bismuth, gay element and hafnium, and alloys of titanium with boron and tin, chromium and vanadium, palladium and antimony. Yes, aluminum can be recommended.
- the presence of impurities is allowed in these metal material base materials, or Addition of trace elements is allowed. For example, in the case of aluminum,
- the thickness is not limited, in the case of an etched metal material, 0.05 to 0.3 bandages are preferable in order to secure strength and flexibility after etching. Particularly preferably, it is 0.07 to 0.2 mm, more preferably 0.07 to 0.15 mm.
- the heat treatment and the crystal structure of the metal material substrate (10) are not limited.
- a hard material that is not subjected to heat treatment is an aggregate of elongated fibrous crystals elongated in the rolling direction. When this hard material is annealed at 300-400 ° C, it becomes a soft material that has almost completely completed primary recrystallization, and when it is annealed at 450-600 ° C, it has a stable high (100) plane crystal. It can be a soft material with grown grains.
- any of the metal material bases described above can be used.
- the metal material base material (10) may be a long material wound in a coil shape or a cut material.
- the highly conductive substance (13) filling the pores (12) is preferentially dissolved at the time of etching and serves as a nucleus for generating pits. Select according to the relationship with gender.
- the metal material base (10) is aluminum
- Pb, Pb ⁇ , Cu, CuO, Cu 2 O, C, which has higher conductivity than aluminum, can be exemplified, and Pb and PbO can be recommended. .
- the method of filling the pores (12) with the highly conductive substance (13) can be exemplified by plating, sputtering, vapor deposition, immersion, CVD, thermal spraying, ion plating, etc., and the filling speed is high and the high molecular film is damaged.
- Plating, vapor deposition, and immersion are recommended because they can be processed at low cost and at low cost.
- the above-mentioned first composite metal materials (1) and (2) are subjected to an etching treatment, and a first etched metal material of the present invention is produced.
- the etching solution is converted from the metal material base through the fine pores (12).
- an etching pit is formed. Since the pores (12) are finely arranged, the etching pit also grows in a tunnel-like manner in the film thickness direction according to the fine pattern, and is formed finely, densely and uniformly, and the surface area is enlarged.
- bonding of the pores hardly occurs.
- the highly conductive substance (13) is dissolved first. Then, an etching pit is formed at a position corresponding to the pore (12) of the metal material base material (10). Since the hole (12) is located, the etching pit grows in the direction of the film thickness in the direction of the film thickness in accordance with the fine pattern as in the case of the composite metal material (1), the surface area is increased, and the high capacitance is obtained. Is obtained.
- the conditions for the etching treatment are not limited, and any conventional method may be used according to the application.
- any conventional method may be used according to the application.
- AC etching is used for low-pressure materials
- DC etching is used for medium-high pressure materials.
- Etching conditions, 1 ⁇ 1 0 0 OH z, current density 0. 0 2 5 ⁇ 2 OA / cm 2 an alternating or direct current etching ring electric quantity 0. 0 2 ⁇ 1 0 0 C / cm 2 can be exemplified .
- the aluminum material for an electrolytic capacitor electrode produced according to the present invention is suitable for medium and high pressure, but is not limited to the medium and high pressure material.
- the polymer thin film may be removed after forming the etching pit, or may be left without being removed. Further, the polymer thin film may be removed at the beginning of the formation of the etching pit, and thereafter, an etching process for further increasing the surface area may be performed.
- the polymer thin film can be easily removed with an organic solvent such as acetone, methyl ethyl ketone, toluene, methyl cellulose, ethyl acetate, petroleum ether and the like.
- the polymer thin film can also be easily removed by immersing the polymer thin film in warm water at a temperature higher than the melting temperature of the polymer thin film.
- the etched metal material of the present invention includes both those obtained by removing the polymer thin film and those remaining.
- the proper etching pit depends on the working voltage of the electrolytic capacitor.
- medium pressure (250-350V) materials For medium pressure (250-350V) materials
- the pit diameter is preferably 0.7 to 2 m, and the pit interval is preferably 1 to 2.5 m.
- the pit diameter is preferably 1.5 to 3 m.
- the pit interval is preferably 2 to 4 ⁇ m.
- the pit diameter is an average value, and it is not necessary that all pits fall within this range.
- the etched aluminum material for an electrolytic capacitor electrode is subjected to a chemical conversion treatment, but the chemical conversion treatment conditions are not limited.
- the treatment conditions are as follows: at least one of oxalic acid, adipic acid, boric acid, phosphoric acid, sodium gayate, etc.
- the electrolyte concentration is 0.05 to 20% by mass, the electrolyte temperature is 0 to 90 ° C, and the current density is 0
- An example is a chemical conversion treatment of lmA / cm 2 to l A / cm 2 , a required formation voltage and a formation time of 60 minutes or less.
- Particularly preferable chemical conversion conditions are that the electrolyte concentration is 0.1 to 15% by mass.
- the electrolyte temperature is 20 to 70 ° C, the current density is 1 to 100 mA / cm 2 , and the formation time is within 30 minutes.
- a phosphoric acid immersion treatment for improving water resistance, a heat treatment for strengthening the film, or an immersion treatment in boiling water can be performed.
- a high capacitance can be obtained by using the above-described etched metal material, that is, a metal material having an increased surface area, as an electrode material. (Second composite metal material)
- FIGS. 3A and 3B schematically show an embodiment of the second composite metal material of the present invention.
- this composite metal material (3) at least one surface of the metal material substrate (10) has a substance having higher conductivity than the oxide of the metal material substrate (10), that is, the first composite metal material described above.
- a large number of fine spots (14) made of a substance equivalent to the highly conductive substance filled in the pores (12) are arranged.
- the fine spots (14) are formed, for example, by arranging a polymer thin film having a large number of pores arranged on the surface of a metal material substrate (10). It is formed by filling a highly conductive substance and then removing the polymer thin film.
- the material and thickness of the metal material base material (10) and the material of the highly conductive substance in the second composite metal material (3) are the same as those of the first composite metal material.
- the diameter (D) and the interval (P) of the fine spots (14) made of a highly conductive material are the diameters (D) and (D) of the fine pores (12) of the first composite metal material (1) (2). According to the interval (F).
- the method for producing the second composite metal material (3) up to the step of filling a highly conductive substance into the pores of the polymer thin film (11) disposed on the surface of the metal material substrate (10). This is the same as the manufacturing process for the first composite metal material (2). Therefore, the method for forming the polymer thin film (11) and the method for filling the highly conductive substance are in accordance with the method for producing the first composite metal material (2).
- the polymer thin film (11) can be removed by dissolving and removing it with an organic solvent such as acetone, methyl ethyl ketone, toluene, methyl cell solvent, ethyl acetate, petroleum ether, or hot water above the melting temperature of the polymer thin film. Dissolution and removal by immersion in water can be exemplified.
- the above-described second composite metal material (3) is subjected to an etching process, and the second etched metal material of the present invention is produced.
- the etching pits In the etching process, since the highly conductive material is arranged in fine spots (14), the etching pits also grow in a tunnel-like manner in the film thickness direction following the fine spots (14), and are fine, dense and uniform. Formed and the surface area is enlarged. In addition, since the gap between adjacent pores is secured more than the subsequent chemical conversion film, the pores are unlikely to be bonded.
- an etched metal material having such an etching pit formed thereon, such as an aluminum material is used, a high capacitance can be obtained due to an increase in the surface area.
- Etching conditions are in accordance with the above-described method of producing the first etched metal material, and appropriate pits and chemical conversion conditions after the etching are also in accordance with the first etched metal material when used for an aluminum material for an electrolytic capacitor electrode. .
- a high-purity aluminum ingot having an A1 purity of 99.9% was produced by a semi-continuous process. Then, these ingots are rolled into foils through homogenization, face milling, hot rolling, cold rolling, intermediate annealing, etc. by a conventional method, and an aluminum material base material having a thickness of 110 m is formed. (10) Made.
- the aluminum material base (10) is degreased and cleaned, and then, in an annealing furnace in an Ar gas atmosphere, the actual temperature is raised from room temperature to 540 ° C at 50 ° CZh, and then 540 ° C. C was held for 24 hours, allowed to cool naturally in the furnace, and then taken out of the furnace, which was used as a common aluminum material base in the following examples.
- a plurality of types of composite aluminum materials I-A, I-B, and I-C are formed on the aluminum material base (10) by changing the processing conditions to form a polymer thin film (11) having a different pore structure. I-D was prepared. These composite aluminum materials IA, IB, IC, and ID correspond to the first composite metal material (1) of the present invention shown in FIGS. 1 (A) and 1 (B). (Composite aluminum material I-A)
- a 3 g / 1 chloroform solution of a polyion complex was prepared from polystyrene sulfonic acid and dimethyloctadecyl ammonium chloride as a polymer solution. Then, the polymer solution was cast on one side of the aluminum material base material (10) at a rate of 5 m 1 / m 2 , and high humidity air at 20 ° C and a relative humidity of 70% was flowed at a flow rate of 3 1 / "Minute for 1 minute.
- the surface of the aluminum material substrate (10) has tunnel-shaped pores (12) that are almost regular hexagons.
- a polymer thin film (11) was formed, in which the polymer film (11) was regularly arranged, and had a thickness (T) of 2 m and an average diameter (D) of the pores (12) of 3 ⁇ m. 111, average pore spacing (P): Further, the same operation was performed on the other surface side of the aluminum material base material (10) to form a polymer thin film (11) having a regular pore structure. did.
- a composite aluminum material was obtained in the same manner as IA except that the polyion complex concentration was 1 gZl chloroform solution and the amount of high humidity air blown was 21 minutes in IA above.
- the polymer thin film (11) thus formed had a thickness (T) of 2 m, an average diameter (D) of the pores (12) of 2 m, and an average pore interval (P) of 3 im.
- the polymer thin film (11) thus formed had a thickness (T) of 10 m, an average diameter (D) of the pores (12) of 5 m, and an average pore interval (P) of 7 m.
- a composite aluminum material was obtained in the same manner as in I-C, except that the amount of the polymer solution cast was 0.5 ml / m 2 in I-C described above.
- the polymer thin film (11) thus formed had a thickness (T) of 1 m, an average diameter (D) of the pores (12) of 5 m, and an average pore interval (P) of 7 m.
- a highly conductive substance was filled into the pores (12) of the polymer thin film (11) with respect to these composite aluminum materials I_A, IB, I-C, and I-D.
- Composite aluminum materials II-A, II-B, II-C, and II-D with the structure shown in the composite metal material (2) of (B) were prepared. These composite aluminum materials II-A, II-B, II-C, II-D correspond to the first composite metal material of the present invention.
- Pb was filled into the pores of the polymer thin film by electroplating.
- the plating conditions were as follows: a Pb plate was used as an anode, and current was supplied at a current density of 1 A / m 2 for 30 seconds.
- Cu was filled in the pores of the polymer thin film by electroplating.
- the plating conditions were such that electricity was supplied for 30 seconds at a current density of 1 A / m 2 using the Cu plate as the anode.
- C was vapor-deposited on the composite aluminum material I-C by an ordinary method, and C was filled in the pores of the polymer thin film.
- the composite aluminum material is immersed in an aqueous solution of Pb ion concentration: 0.5 mol / 1 for 2 minutes with respect to the composite aluminum material I-D for 2 minutes, and then dried in a dryer at 80 ° C to obtain a polymer.
- a Pb compound (oxide) was filled in the pores of the thin film.
- composite aluminum materials II-A, II-B and II-C For these composite aluminum materials II-A, II-B and II-C, the polymer thin film (11) was removed, and fine spots made of a highly conductive substance were formed on the surface of the metal material substrate (10).
- Composite aluminum materials III-A, III-B and III-C in which (14) were arranged were manufactured. These composite aluminum materials III-A, III-B, and III-C correspond to the third composite metal material (3) of the present invention shown in FIGS. 3 (A) and 3 (B).
- composite aluminum material III—A The composite aluminum material II-A was immersed in acetone for 1 minute to remove the polymer thin film, thereby obtaining a composite aluminum material III-A in which fine spots composed of Pb were arranged.
- the composite aluminum material II-B was immersed in methyl ketone for 1 minute to remove the high molecular thin film, thereby obtaining a composite aluminum material 111-B having fine spots composed of Cu.
- the composite aluminum material II-C was immersed in warm water at 90 ° C for 3 minutes to remove the high molecular thin film, and a composite aluminum material III-C with fine spots composed of C was obtained.
- each of the composite aluminum materials described above was subjected to an etching treatment under any of the following conditions A and B, and the etched aluminum for electrolytic capacitor electrodes of Nos. 1 to 19 shown in Table 1 was obtained. Materials were made. In Comparative Example No. 20, the aluminum material base (10) without the polymer thin film (11) was etched.
- the composite aluminum material is immersed in a first electrolytic solution (lmol / 1 hydrochloric acid + 3.2 mol Zl sulfuric acid aqueous solution) at 80 ° ⁇ , and a direct current having a current density of 0.2 AZcm 2 is supplied for 100 seconds to perform electrolytic etching. did. Furthermore, it was immersed in a second electrolytic solution (1.5 mol Zl hydrochloric acid + 0.005 ⁇ 1 oxalic acid aqueous solution) at 90 ° C, and subjected to chemical etching for 10 minutes.
- a first electrolytic solution lmol / 1 hydrochloric acid + 3.2 mol Zl sulfuric acid aqueous solution
- a direct current having a current density of 0.2 AZcm 2 is supplied for 100 seconds to perform electrolytic etching. did.
- a second electrolytic solution 1.5 mol Zl hydrochloric acid + 0.005 ⁇ 1 oxalic acid aqueous solution
- the composite aluminum material was immersed in a 10% ferric chloride aqueous solution at 50 ° C. for 10 minutes, then pulled up and washed with water. As a result, the pores or high conductivity Only the fine spots of the conductive material were chemically etched. Furthermore, it was immersed in a second electrolytic solution (5% hydrochloric acid + 10% sulfuric acid aqueous solution) at 75 ° C., and was subjected to electrolytic etching by applying a direct current of 0.2 A / cm 2 for 100 seconds. Subsequently, the same liquid was used for 10 minutes for chemical leaching.
- a second electrolytic solution 5% hydrochloric acid + 10% sulfuric acid aqueous solution
- the etched aluminum material for electrolytic capacitor electrodes was subjected to a chemical conversion treatment at 350 V in a boric acid bath, and the capacitance was measured.
- the capacitance is shown in Table 1 as a relative value with the capacitance of Comparative Example No. 20 being 100%.
- the etched aluminum material for the electrolytic capacitor electrode manufactured in each example has a more uniform hole diameter and spacing of the etching pits than the comparative example, and a high capacitance can be obtained by increasing the area coverage.
- the bonding of the etching pits was observed, a giant pit was formed, and the pit interval was not uniform.
- the composite metal material of the present invention can generate etching pits with high density and uniformity based on regularly arranged fine patterns of a polymer thin film. Etching can be performed deep from the pits and in a state where coupling is unlikely to occur in the tunnel, and it is possible to reliably increase the area coverage and increase the capacitance of the electrolytic capacitor. Eventually, the size and performance of the electrolytic capacitor can be reduced, and the size and performance of electronic devices incorporating the electrolytic capacitor can be reduced.
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EP03703046A EP1477589A4 (en) | 2002-01-25 | 2003-01-24 | METAL COMPOSITE MATERIAL AND PRODUCTION METHOD THEREFOR, METAL METAL MATERIAL AND METHOD OF PRODUCTION THEREOF AND ELECTROLYTIC CONDENSER |
KR10-2004-7011394A KR20040078132A (ko) | 2002-01-25 | 2003-01-24 | 복합 금속 재료 및 그 제조 방법, 에칭된 금속 재료 및 그제조 방법 및 전해 콘덴서 |
JP2003562364A JPWO2003062506A1 (ja) | 2002-01-25 | 2003-01-24 | 複合金属材料およびその製造方法、エッチングされた金属材料およびその製造方法、ならびに電解コンデンサ |
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JP2005294596A (ja) * | 2004-03-31 | 2005-10-20 | Nippon Chemicon Corp | 電解コンデンサ |
JP2005294595A (ja) * | 2004-03-31 | 2005-10-20 | Nippon Chemicon Corp | 電解コンデンサ |
WO2006022358A1 (ja) * | 2004-08-24 | 2006-03-02 | Teijin Limited | 積層体 |
WO2009038061A1 (ja) * | 2007-09-21 | 2009-03-26 | Fujifilm Corporation | 複層フィルム及びその製造方法 |
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CN101967673A (zh) * | 2010-08-27 | 2011-02-09 | 中国科学院海洋研究所 | 利用电解刻蚀在金属铝表面制备超疏水膜的方法 |
US9202639B2 (en) * | 2012-08-17 | 2015-12-01 | Nokia Technologies Oy | Apparatus and associated methods |
CN108302319B8 (zh) * | 2017-07-13 | 2021-06-25 | 哈工大泰州创新科技研究院有限公司 | 斑点复合金属材料 |
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2003
- 2003-01-24 EP EP03703046A patent/EP1477589A4/en not_active Withdrawn
- 2003-01-24 CN CN 03804541 patent/CN1639392A/zh active Pending
- 2003-01-24 WO PCT/JP2003/000652 patent/WO2003062506A1/ja not_active Application Discontinuation
Patent Citations (4)
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JPS6151818A (ja) * | 1984-08-21 | 1986-03-14 | 昭和アルミニウム株式会社 | 電解コンデンサ用アルミニウム電極材の製造方法 |
EP0459461A1 (en) * | 1990-05-31 | 1991-12-04 | Toshiba Tungaloy Co. Ltd. | Multi-colored product and process for producing the same |
JPH08253878A (ja) * | 1995-03-16 | 1996-10-01 | Toppan Printing Co Ltd | エッチング部品の製造方法 |
JP2000251236A (ja) * | 1998-12-28 | 2000-09-14 | Toshiba Corp | 磁気記録装置、磁気記録媒体およびその製造方法 |
Non-Patent Citations (2)
Title |
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See also references of EP1477589A4 * |
TORU USHIROGOCHI: "Nano material", TOSHIBA REVIEW, vol. 56, no. 10, 1 October 2001 (2001-10-01), pages 66 - 67, XP002975402 * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005294596A (ja) * | 2004-03-31 | 2005-10-20 | Nippon Chemicon Corp | 電解コンデンサ |
JP2005294595A (ja) * | 2004-03-31 | 2005-10-20 | Nippon Chemicon Corp | 電解コンデンサ |
WO2006022358A1 (ja) * | 2004-08-24 | 2006-03-02 | Teijin Limited | 積層体 |
WO2009038061A1 (ja) * | 2007-09-21 | 2009-03-26 | Fujifilm Corporation | 複層フィルム及びその製造方法 |
JPWO2009038061A1 (ja) * | 2007-09-21 | 2011-01-06 | 富士フイルム株式会社 | 複層フィルム及びその製造方法 |
JP2009242546A (ja) * | 2008-03-31 | 2009-10-22 | Fujifilm Corp | 多孔フィルムの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1639392A (zh) | 2005-07-13 |
EP1477589A4 (en) | 2007-12-12 |
EP1477589A1 (en) | 2004-11-17 |
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