WO2003061025A1 - Compound semiconductor multilayer structure, hall device, and hall device manufacturing method - Google Patents
Compound semiconductor multilayer structure, hall device, and hall device manufacturing method Download PDFInfo
- Publication number
- WO2003061025A1 WO2003061025A1 PCT/JP2003/000291 JP0300291W WO03061025A1 WO 2003061025 A1 WO2003061025 A1 WO 2003061025A1 JP 0300291 W JP0300291 W JP 0300291W WO 03061025 A1 WO03061025 A1 WO 03061025A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- compound semiconductor
- active layer
- hall device
- multilayer structure
- semiconductor multilayer
- Prior art date
Links
- 150000001875 compounds Chemical class 0.000 title abstract 8
- 239000004065 semiconductor Substances 0.000 title abstract 8
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03700583A EP1469531A4 (en) | 2002-01-15 | 2003-01-15 | COMPOSED MULTILAYER SEMICONDUCTOR STRUCTURE, HALL SETUP AND MANUFACTURING METHOD FOR A HALL SETUP |
JP2003561011A JP4653397B2 (ja) | 2002-01-15 | 2003-01-15 | ホール素子の製造方法 |
AU2003201894A AU2003201894A1 (en) | 2002-01-15 | 2003-01-15 | Compound semiconductor multilayer structure, hall device, and hall device manufacturing method |
KR1020047011025A KR100658025B1 (ko) | 2002-01-15 | 2003-01-15 | 화합물 반도체 적층 구조체, 홀 소자 및 홀 소자의 제조방법 |
US10/501,349 US7388268B2 (en) | 2002-01-15 | 2003-01-15 | Compound semiconductor multilayer structure, hall device, and hall device manufacturing method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002006670 | 2002-01-15 | ||
JP2002-6670 | 2002-01-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003061025A1 true WO2003061025A1 (en) | 2003-07-24 |
Family
ID=19191254
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2003/000291 WO2003061025A1 (en) | 2002-01-15 | 2003-01-15 | Compound semiconductor multilayer structure, hall device, and hall device manufacturing method |
Country Status (7)
Country | Link |
---|---|
US (1) | US7388268B2 (ja) |
EP (1) | EP1469531A4 (ja) |
JP (2) | JP4653397B2 (ja) |
KR (1) | KR100658025B1 (ja) |
CN (1) | CN100511748C (ja) |
AU (1) | AU2003201894A1 (ja) |
WO (1) | WO2003061025A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016129288A1 (ja) * | 2015-02-12 | 2016-08-18 | 旭化成エレクトロニクス株式会社 | センサ装置及びその製造方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100712753B1 (ko) * | 2005-03-09 | 2007-04-30 | 주식회사 실트론 | 화합물 반도체 장치 및 그 제조방법 |
US8736003B2 (en) * | 2009-12-18 | 2014-05-27 | Allegro Microsystems, Llc | Integrated hybrid hall effect transducer |
JP2013002995A (ja) * | 2011-06-17 | 2013-01-07 | Pioneer Electronic Corp | 光伝導基板およびこれを用いた電磁波発生検出装置 |
JP5260810B1 (ja) * | 2011-08-22 | 2013-08-14 | 独立行政法人科学技術振興機構 | 整流装置、トランジスタおよび整流方法 |
KR101388523B1 (ko) * | 2013-02-21 | 2014-04-24 | 한국과학기술연구원 | 격자 부정합 해소층을 이용한 화합물 반도체 기판 및 그 제조방법 |
CN106848056B (zh) * | 2017-02-21 | 2019-07-09 | 苏州矩阵光电有限公司 | 一种霍尔元件及其制备方法 |
CN109616570B (zh) * | 2018-09-30 | 2022-08-16 | 厦门市三安集成电路有限公司 | 一种基于phemt的霍尔电阻的制作方法 |
CN113758993A (zh) * | 2021-08-06 | 2021-12-07 | 苏州矩阵光电有限公司 | 集成有阵列型霍尔元件的二维检测电路 |
Citations (14)
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US4668100A (en) | 1985-09-03 | 1987-05-26 | Citizen Watch Co., Ltd. | Electronic equipment with geomagnetic direction sensor |
EP0548375A1 (en) | 1991-07-16 | 1993-06-30 | Asahi Kasei Kogyo Kabushiki Kaisha | Semiconductor sensor and its manufacturing method |
JPH05297084A (ja) * | 1992-04-15 | 1993-11-12 | Toyota Motor Corp | 地磁気センサ装置 |
JPH0677556A (ja) | 1991-07-16 | 1994-03-18 | Asahi Chem Ind Co Ltd | 半導体センサおよびその製造方法 |
US5430310A (en) | 1991-03-28 | 1995-07-04 | Asahi Kasei Kogyo Kabushiki Kaisha | Field effect transistor |
JPH07283390A (ja) * | 1994-04-04 | 1995-10-27 | Asahi Chem Ind Co Ltd | オーミック電極 |
JPH09116207A (ja) * | 1995-10-18 | 1997-05-02 | Asahi Chem Ind Co Ltd | ホール素子とその製造方法 |
EP0810544A2 (en) | 1996-05-29 | 1997-12-03 | Fujitsu Takamisawa Component Limited | Pointing device for moving and positioning a pointer on a display of a computer |
JPH10233539A (ja) * | 1991-07-16 | 1998-09-02 | Asahi Chem Ind Co Ltd | 化合物半導体を含む積層体およびその製造方法 |
JP2000183424A (ja) * | 1998-12-15 | 2000-06-30 | Hitachi Cable Ltd | 化合物半導体多層薄膜及び半導体装置 |
KR20010058109A (ko) | 1999-12-24 | 2001-07-05 | 윤종용 | 휴대폰의 통화대기시 전류소모 절감장치 |
EP1124271A1 (en) | 1998-08-07 | 2001-08-16 | Asahi Kasei Kabushiki Kaisha | Magnetic sensor and method for fabricating the same |
JP2001352369A (ja) * | 2000-06-07 | 2001-12-21 | Nec Saitama Ltd | 折り畳み型携帯通信機 |
US20010055002A1 (en) * | 2000-06-27 | 2001-12-27 | Fujitsu Takamisawa Component Limited | Coordinates input apparatus |
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JPS54157485A (en) * | 1978-06-02 | 1979-12-12 | Agency Of Ind Science & Technol | Planar semiconductor device |
US4195305A (en) * | 1978-09-25 | 1980-03-25 | Varian Associates, Inc. | Lattice constant grading in the Aly Ga1-y As1-x Sbx alloy system |
US4690714A (en) * | 1979-01-29 | 1987-09-01 | Li Chou H | Method of making active solid state devices |
JPS5948970A (ja) | 1982-09-13 | 1984-03-21 | Pioneer Electronic Corp | 磁電変換素子 |
JPS6077474A (ja) * | 1983-10-04 | 1985-05-02 | Nec Corp | ホ−ル素子の製造方法 |
JPH06103761B2 (ja) | 1989-04-14 | 1994-12-14 | 株式会社村田製作所 | 4相差動回転センサー |
JP2557998B2 (ja) * | 1990-04-04 | 1996-11-27 | 旭化成工業株式会社 | InAsホール効果素子 |
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JPH05327059A (ja) * | 1992-05-22 | 1993-12-10 | Japan Energy Corp | ホ−ル素子およびその製造方法 |
JPH06125122A (ja) | 1992-10-09 | 1994-05-06 | Nippon Autom Kk | 磁気抵抗素子及びその取付基板並びに該磁気抵抗素子と取付基板を用いた磁気センサ |
JP2888074B2 (ja) | 1993-01-25 | 1999-05-10 | 三菱電機株式会社 | 磁気抵抗素子 |
US5385864A (en) * | 1993-05-28 | 1995-01-31 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating semiconductor thin film and a Hall-effect device |
US5689123A (en) * | 1994-04-07 | 1997-11-18 | Sdl, Inc. | III-V aresenide-nitride semiconductor materials and devices |
US5883564A (en) * | 1994-04-18 | 1999-03-16 | General Motors Corporation | Magnetic field sensor having high mobility thin indium antimonide active layer on thin aluminum indium antimonide buffer layer |
US5491461A (en) * | 1994-05-09 | 1996-02-13 | General Motors Corporation | Magnetic field sensor on elemental semiconductor substrate with electric field reduction means |
JPH0888423A (ja) | 1994-09-19 | 1996-04-02 | Asahi Chem Ind Co Ltd | 磁気センサ |
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JP3681425B2 (ja) | 1995-01-24 | 2005-08-10 | 旭化成エレクトロニクス株式会社 | GaAsホール素子 |
JPH08242027A (ja) | 1995-03-03 | 1996-09-17 | Mitsubishi Electric Corp | 磁気抵抗素子回路 |
JPH08274385A (ja) * | 1995-03-30 | 1996-10-18 | Showa Denko Kk | 磁電変換素子 |
JPH09203748A (ja) | 1996-01-29 | 1997-08-05 | Tokin Corp | 半導体加速度センサ |
JPH09219547A (ja) | 1996-02-09 | 1997-08-19 | Sony Corp | 磁気抵抗素子 |
JPH1074308A (ja) | 1996-08-30 | 1998-03-17 | Hitachi Ltd | 磁気スイッチング素子及びそれを用いた磁気センサと磁気記録再生装置 |
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WO2004040638A1 (ja) * | 2002-10-29 | 2004-05-13 | Matsushita Electric Industrial Co., Ltd. | 窒化砒化ガリウムインジウム系ヘテロ電界効果トランジスタ及びその製造方法並びにそれを用いた送受信装置 |
-
2003
- 2003-01-15 JP JP2003561011A patent/JP4653397B2/ja not_active Expired - Fee Related
- 2003-01-15 CN CNB038022915A patent/CN100511748C/zh not_active Expired - Fee Related
- 2003-01-15 AU AU2003201894A patent/AU2003201894A1/en not_active Abandoned
- 2003-01-15 WO PCT/JP2003/000291 patent/WO2003061025A1/ja active Application Filing
- 2003-01-15 US US10/501,349 patent/US7388268B2/en not_active Expired - Lifetime
- 2003-01-15 KR KR1020047011025A patent/KR100658025B1/ko active IP Right Grant
- 2003-01-15 EP EP03700583A patent/EP1469531A4/en not_active Withdrawn
-
2010
- 2010-07-20 JP JP2010163332A patent/JP4891425B2/ja not_active Expired - Fee Related
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4668100A (en) | 1985-09-03 | 1987-05-26 | Citizen Watch Co., Ltd. | Electronic equipment with geomagnetic direction sensor |
US5430310A (en) | 1991-03-28 | 1995-07-04 | Asahi Kasei Kogyo Kabushiki Kaisha | Field effect transistor |
JPH10233539A (ja) * | 1991-07-16 | 1998-09-02 | Asahi Chem Ind Co Ltd | 化合物半導体を含む積層体およびその製造方法 |
EP0548375A1 (en) | 1991-07-16 | 1993-06-30 | Asahi Kasei Kogyo Kabushiki Kaisha | Semiconductor sensor and its manufacturing method |
JPH0677556A (ja) | 1991-07-16 | 1994-03-18 | Asahi Chem Ind Co Ltd | 半導体センサおよびその製造方法 |
JPH05297084A (ja) * | 1992-04-15 | 1993-11-12 | Toyota Motor Corp | 地磁気センサ装置 |
JPH07283390A (ja) * | 1994-04-04 | 1995-10-27 | Asahi Chem Ind Co Ltd | オーミック電極 |
JPH09116207A (ja) * | 1995-10-18 | 1997-05-02 | Asahi Chem Ind Co Ltd | ホール素子とその製造方法 |
EP0810544A2 (en) | 1996-05-29 | 1997-12-03 | Fujitsu Takamisawa Component Limited | Pointing device for moving and positioning a pointer on a display of a computer |
EP1124271A1 (en) | 1998-08-07 | 2001-08-16 | Asahi Kasei Kabushiki Kaisha | Magnetic sensor and method for fabricating the same |
JP2000183424A (ja) * | 1998-12-15 | 2000-06-30 | Hitachi Cable Ltd | 化合物半導体多層薄膜及び半導体装置 |
KR20010058109A (ko) | 1999-12-24 | 2001-07-05 | 윤종용 | 휴대폰의 통화대기시 전류소모 절감장치 |
JP2001352369A (ja) * | 2000-06-07 | 2001-12-21 | Nec Saitama Ltd | 折り畳み型携帯通信機 |
US20010055002A1 (en) * | 2000-06-27 | 2001-12-27 | Fujitsu Takamisawa Component Limited | Coordinates input apparatus |
Non-Patent Citations (1)
Title |
---|
See also references of EP1469531A4 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016129288A1 (ja) * | 2015-02-12 | 2016-08-18 | 旭化成エレクトロニクス株式会社 | センサ装置及びその製造方法 |
JPWO2016129288A1 (ja) * | 2015-02-12 | 2017-08-24 | 旭化成エレクトロニクス株式会社 | センサ装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2010278456A (ja) | 2010-12-09 |
EP1469531A4 (en) | 2007-07-18 |
CN100511748C (zh) | 2009-07-08 |
KR20040073568A (ko) | 2004-08-19 |
CN1615551A (zh) | 2005-05-11 |
JP4891425B2 (ja) | 2012-03-07 |
US7388268B2 (en) | 2008-06-17 |
US20050042814A1 (en) | 2005-02-24 |
JP4653397B2 (ja) | 2011-03-16 |
AU2003201894A1 (en) | 2003-07-30 |
EP1469531A1 (en) | 2004-10-20 |
KR100658025B1 (ko) | 2006-12-15 |
JPWO2003061025A1 (ja) | 2005-05-19 |
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