WO2003061025A1 - Compound semiconductor multilayer structure, hall device, and hall device manufacturing method - Google Patents

Compound semiconductor multilayer structure, hall device, and hall device manufacturing method Download PDF

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Publication number
WO2003061025A1
WO2003061025A1 PCT/JP2003/000291 JP0300291W WO03061025A1 WO 2003061025 A1 WO2003061025 A1 WO 2003061025A1 JP 0300291 W JP0300291 W JP 0300291W WO 03061025 A1 WO03061025 A1 WO 03061025A1
Authority
WO
WIPO (PCT)
Prior art keywords
compound semiconductor
active layer
hall device
multilayer structure
semiconductor multilayer
Prior art date
Application number
PCT/JP2003/000291
Other languages
English (en)
French (fr)
Inventor
Takayuki Watanabe
Yoshihiko Shibata
Tsuyoshi Ujihara
Takashi Yoshida
Akihiko Oyama
Original Assignee
Asahi Kasei Electronics Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Kasei Electronics Co., Ltd. filed Critical Asahi Kasei Electronics Co., Ltd.
Priority to EP03700583A priority Critical patent/EP1469531A4/en
Priority to JP2003561011A priority patent/JP4653397B2/ja
Priority to AU2003201894A priority patent/AU2003201894A1/en
Priority to KR1020047011025A priority patent/KR100658025B1/ko
Priority to US10/501,349 priority patent/US7388268B2/en
Publication of WO2003061025A1 publication Critical patent/WO2003061025A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
PCT/JP2003/000291 2002-01-15 2003-01-15 Compound semiconductor multilayer structure, hall device, and hall device manufacturing method WO2003061025A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP03700583A EP1469531A4 (en) 2002-01-15 2003-01-15 COMPOSED MULTILAYER SEMICONDUCTOR STRUCTURE, HALL SETUP AND MANUFACTURING METHOD FOR A HALL SETUP
JP2003561011A JP4653397B2 (ja) 2002-01-15 2003-01-15 ホール素子の製造方法
AU2003201894A AU2003201894A1 (en) 2002-01-15 2003-01-15 Compound semiconductor multilayer structure, hall device, and hall device manufacturing method
KR1020047011025A KR100658025B1 (ko) 2002-01-15 2003-01-15 화합물 반도체 적층 구조체, 홀 소자 및 홀 소자의 제조방법
US10/501,349 US7388268B2 (en) 2002-01-15 2003-01-15 Compound semiconductor multilayer structure, hall device, and hall device manufacturing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002006670 2002-01-15
JP2002-6670 2002-01-15

Publications (1)

Publication Number Publication Date
WO2003061025A1 true WO2003061025A1 (en) 2003-07-24

Family

ID=19191254

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2003/000291 WO2003061025A1 (en) 2002-01-15 2003-01-15 Compound semiconductor multilayer structure, hall device, and hall device manufacturing method

Country Status (7)

Country Link
US (1) US7388268B2 (ja)
EP (1) EP1469531A4 (ja)
JP (2) JP4653397B2 (ja)
KR (1) KR100658025B1 (ja)
CN (1) CN100511748C (ja)
AU (1) AU2003201894A1 (ja)
WO (1) WO2003061025A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016129288A1 (ja) * 2015-02-12 2016-08-18 旭化成エレクトロニクス株式会社 センサ装置及びその製造方法

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* Cited by examiner, † Cited by third party
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KR100712753B1 (ko) * 2005-03-09 2007-04-30 주식회사 실트론 화합물 반도체 장치 및 그 제조방법
US8736003B2 (en) * 2009-12-18 2014-05-27 Allegro Microsystems, Llc Integrated hybrid hall effect transducer
JP2013002995A (ja) * 2011-06-17 2013-01-07 Pioneer Electronic Corp 光伝導基板およびこれを用いた電磁波発生検出装置
JP5260810B1 (ja) * 2011-08-22 2013-08-14 独立行政法人科学技術振興機構 整流装置、トランジスタおよび整流方法
KR101388523B1 (ko) * 2013-02-21 2014-04-24 한국과학기술연구원 격자 부정합 해소층을 이용한 화합물 반도체 기판 및 그 제조방법
CN106848056B (zh) * 2017-02-21 2019-07-09 苏州矩阵光电有限公司 一种霍尔元件及其制备方法
CN109616570B (zh) * 2018-09-30 2022-08-16 厦门市三安集成电路有限公司 一种基于phemt的霍尔电阻的制作方法
CN113758993A (zh) * 2021-08-06 2021-12-07 苏州矩阵光电有限公司 集成有阵列型霍尔元件的二维检测电路

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EP0548375A1 (en) 1991-07-16 1993-06-30 Asahi Kasei Kogyo Kabushiki Kaisha Semiconductor sensor and its manufacturing method
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JPH0677556A (ja) 1991-07-16 1994-03-18 Asahi Chem Ind Co Ltd 半導体センサおよびその製造方法
US5430310A (en) 1991-03-28 1995-07-04 Asahi Kasei Kogyo Kabushiki Kaisha Field effect transistor
JPH07283390A (ja) * 1994-04-04 1995-10-27 Asahi Chem Ind Co Ltd オーミック電極
JPH09116207A (ja) * 1995-10-18 1997-05-02 Asahi Chem Ind Co Ltd ホール素子とその製造方法
EP0810544A2 (en) 1996-05-29 1997-12-03 Fujitsu Takamisawa Component Limited Pointing device for moving and positioning a pointer on a display of a computer
JPH10233539A (ja) * 1991-07-16 1998-09-02 Asahi Chem Ind Co Ltd 化合物半導体を含む積層体およびその製造方法
JP2000183424A (ja) * 1998-12-15 2000-06-30 Hitachi Cable Ltd 化合物半導体多層薄膜及び半導体装置
KR20010058109A (ko) 1999-12-24 2001-07-05 윤종용 휴대폰의 통화대기시 전류소모 절감장치
EP1124271A1 (en) 1998-08-07 2001-08-16 Asahi Kasei Kabushiki Kaisha Magnetic sensor and method for fabricating the same
JP2001352369A (ja) * 2000-06-07 2001-12-21 Nec Saitama Ltd 折り畳み型携帯通信機
US20010055002A1 (en) * 2000-06-27 2001-12-27 Fujitsu Takamisawa Component Limited Coordinates input apparatus

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4668100A (en) 1985-09-03 1987-05-26 Citizen Watch Co., Ltd. Electronic equipment with geomagnetic direction sensor
US5430310A (en) 1991-03-28 1995-07-04 Asahi Kasei Kogyo Kabushiki Kaisha Field effect transistor
JPH10233539A (ja) * 1991-07-16 1998-09-02 Asahi Chem Ind Co Ltd 化合物半導体を含む積層体およびその製造方法
EP0548375A1 (en) 1991-07-16 1993-06-30 Asahi Kasei Kogyo Kabushiki Kaisha Semiconductor sensor and its manufacturing method
JPH0677556A (ja) 1991-07-16 1994-03-18 Asahi Chem Ind Co Ltd 半導体センサおよびその製造方法
JPH05297084A (ja) * 1992-04-15 1993-11-12 Toyota Motor Corp 地磁気センサ装置
JPH07283390A (ja) * 1994-04-04 1995-10-27 Asahi Chem Ind Co Ltd オーミック電極
JPH09116207A (ja) * 1995-10-18 1997-05-02 Asahi Chem Ind Co Ltd ホール素子とその製造方法
EP0810544A2 (en) 1996-05-29 1997-12-03 Fujitsu Takamisawa Component Limited Pointing device for moving and positioning a pointer on a display of a computer
EP1124271A1 (en) 1998-08-07 2001-08-16 Asahi Kasei Kabushiki Kaisha Magnetic sensor and method for fabricating the same
JP2000183424A (ja) * 1998-12-15 2000-06-30 Hitachi Cable Ltd 化合物半導体多層薄膜及び半導体装置
KR20010058109A (ko) 1999-12-24 2001-07-05 윤종용 휴대폰의 통화대기시 전류소모 절감장치
JP2001352369A (ja) * 2000-06-07 2001-12-21 Nec Saitama Ltd 折り畳み型携帯通信機
US20010055002A1 (en) * 2000-06-27 2001-12-27 Fujitsu Takamisawa Component Limited Coordinates input apparatus

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* Cited by examiner, † Cited by third party
Title
See also references of EP1469531A4

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016129288A1 (ja) * 2015-02-12 2016-08-18 旭化成エレクトロニクス株式会社 センサ装置及びその製造方法
JPWO2016129288A1 (ja) * 2015-02-12 2017-08-24 旭化成エレクトロニクス株式会社 センサ装置及びその製造方法

Also Published As

Publication number Publication date
JP2010278456A (ja) 2010-12-09
EP1469531A4 (en) 2007-07-18
CN100511748C (zh) 2009-07-08
KR20040073568A (ko) 2004-08-19
CN1615551A (zh) 2005-05-11
JP4891425B2 (ja) 2012-03-07
US7388268B2 (en) 2008-06-17
US20050042814A1 (en) 2005-02-24
JP4653397B2 (ja) 2011-03-16
AU2003201894A1 (en) 2003-07-30
EP1469531A1 (en) 2004-10-20
KR100658025B1 (ko) 2006-12-15
JPWO2003061025A1 (ja) 2005-05-19

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