JP5260810B1 - 整流装置、トランジスタおよび整流方法 - Google Patents
整流装置、トランジスタおよび整流方法 Download PDFInfo
- Publication number
- JP5260810B1 JP5260810B1 JP2013502951A JP2013502951A JP5260810B1 JP 5260810 B1 JP5260810 B1 JP 5260810B1 JP 2013502951 A JP2013502951 A JP 2013502951A JP 2013502951 A JP2013502951 A JP 2013502951A JP 5260810 B1 JP5260810 B1 JP 5260810B1
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- electrons
- dimensional channel
- spin
- external magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 8
- 230000005291 magnetic effect Effects 0.000 claims abstract description 95
- 239000004065 semiconductor Substances 0.000 claims abstract description 41
- 230000003993 interaction Effects 0.000 claims abstract description 15
- 230000005684 electric field Effects 0.000 claims abstract description 14
- 239000013078 crystal Substances 0.000 claims description 6
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 5
- 230000010287 polarization Effects 0.000 description 22
- 238000010586 diagram Methods 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 9
- 239000010408 film Substances 0.000 description 9
- 239000003302 ferromagnetic material Substances 0.000 description 7
- 101100167360 Drosophila melanogaster chb gene Proteins 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 239000002096 quantum dot Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017115 AlSb Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/122—Single quantum well structures
- H01L29/125—Quantum wire structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66984—Devices using spin polarized carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Abstract
Description
18 一次元チャネル
20 ソース
22 ドレイン
26 ゲート電極
32 サイドゲート
38 外部磁場生成部
60、62 トランジスタ
Claims (10)
- 半導体からなり電子が走行する一次元チャネルと、
前記一次元チャネルに電界を印加することにより、前記一次元チャネルを走行する電子にスピン軌道相互作用に起因する有効磁場を前記電子が走行する方向と交差する方向に生成させる電極と、
前記一次元チャネルに外部磁場を生成する外部磁場生成部と、
を具備することを特徴とする整流装置。 - 前記一次元チャネルは量子ポイントコンタクトであることを特徴とする請求項1記載の整流装置。
- 前記外部磁場生成部は、前記外部磁場を、前記有効磁場の方向または前記有効磁場と反対方向に生成することを特徴とする請求項1記載の整流装置。
- 前記一次元チャネルは、閃亜鉛鉱型結晶構造を有することを特徴とする請求項1から3のいずれか一項記載の整流装置。
- 前記一次元チャネルは、(001)面または(110)面上に形成されていることを特徴とする請求項4記載の整流装置。
- 前記一次元チャネルは、前記電子が走行する方向に対し両側からくびれた箇所に形成される半導体であることを特徴とする請求項1から5のいずれか一項記載の整流装置。
- 前記一次元チャネルの前記くびれた箇所の両側に空乏層を形成するサイドゲートを具備することを特徴とする請求項6記載の整流装置。
- 請求項1から7のいずれか一項記載の整流装置を含むトランジスタ。
- 前記一次元チャネルに電子を注入するソースと、
前記一次元チャネルから電子を受けるドレインと、を具備し、
前記電極はゲート電極であることを特徴とする請求項8記載のトランジスタ。 - 半導体からなり電子が走行している一次元チャネルに、電界を印加することにより、前記一次元チャネルを走行している電子にスピン軌道相互作用に起因する有効磁場を前記電子が走行している方向と交差する方向に生成させるステップと、
前記一次元チャネルに外部磁場を生成するステップと、
を含むことを特徴とする整流方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013502951A JP5260810B1 (ja) | 2011-08-22 | 2012-08-21 | 整流装置、トランジスタおよび整流方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011180767 | 2011-08-22 | ||
JP2011180767 | 2011-08-22 | ||
PCT/JP2012/071025 WO2013027712A1 (ja) | 2011-08-22 | 2012-08-21 | 整流装置、トランジスタおよび整流方法 |
JP2013502951A JP5260810B1 (ja) | 2011-08-22 | 2012-08-21 | 整流装置、トランジスタおよび整流方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP5260810B1 true JP5260810B1 (ja) | 2013-08-14 |
JPWO2013027712A1 JPWO2013027712A1 (ja) | 2015-03-19 |
Family
ID=47746451
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013502951A Active JP5260810B1 (ja) | 2011-08-22 | 2012-08-21 | 整流装置、トランジスタおよび整流方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9450176B2 (ja) |
EP (1) | EP2736080B1 (ja) |
JP (1) | JP5260810B1 (ja) |
KR (1) | KR101421075B1 (ja) |
CN (1) | CN103718303B (ja) |
WO (1) | WO2013027712A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109791943B (zh) * | 2016-09-30 | 2022-09-13 | 英特尔公司 | 具有单电子晶体管检测器的量子点器件 |
FR3068518B1 (fr) * | 2017-06-28 | 2019-08-30 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de controle d'un dispositif quantique a qubit de spin |
WO2019002761A1 (fr) * | 2017-06-28 | 2019-01-03 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de controle d'un dispositif quantique a qubit de spin |
CN108100992B (zh) * | 2017-12-20 | 2019-05-28 | 郑州云海信息技术有限公司 | 一种纳米环的量子纠缠态获取方法及其装置 |
WO2022094107A1 (en) * | 2020-10-29 | 2022-05-05 | The Regents Of The University Of California | Spin-orbit rectifier for weak radio frequency energy harvesting |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006032570A (ja) * | 2004-07-14 | 2006-02-02 | Nippon Telegr & Teleph Corp <Ntt> | スピンフィルタ及びスピン状態分離方法 |
JP2011071255A (ja) * | 2009-09-25 | 2011-04-07 | Japan Science & Technology Agency | 電子スピン共鳴生成装置および電子スピン共鳴の生成方法 |
JP2011082388A (ja) * | 2009-10-08 | 2011-04-21 | Saitama Univ | スピントロニクス装置及び論理演算素子 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4204132A (en) * | 1976-08-11 | 1980-05-20 | Agency Of Industrial Science & Technology, Ministry Of International Trade & Industry | Highly sensitive Hall element |
JPS5426369U (ja) * | 1977-07-25 | 1979-02-21 | ||
US4276555A (en) * | 1978-07-13 | 1981-06-30 | International Business Machines Corporation | Controlled avalanche voltage transistor and magnetic sensor |
US4488164A (en) * | 1982-06-10 | 1984-12-11 | At&T Bell Laboratories | Quantized Hall effect switching devices |
US5497015A (en) * | 1988-11-12 | 1996-03-05 | Sony Corporation | Quantum interference transistor |
EP0517647A3 (en) * | 1991-06-04 | 1993-07-21 | Fujitsu Limited | Quantum semiconductor device that uses a quantum point contact for producing a quantum mechanical carrier wave with directivity |
JP2701633B2 (ja) * | 1991-12-09 | 1998-01-21 | 日本電気株式会社 | 半導体装置 |
JPH05315598A (ja) * | 1992-05-08 | 1993-11-26 | Fujitsu Ltd | 半導体装置 |
JP3257034B2 (ja) * | 1992-06-03 | 2002-02-18 | ソニー株式会社 | 化合物半導体装置とその製造方法 |
JPH06244216A (ja) * | 1992-12-21 | 1994-09-02 | Mitsubishi Electric Corp | Ipgトランジスタ及びその製造方法,並びに半導体集積回路装置及びその製造方法 |
GB9311111D0 (en) * | 1993-05-28 | 1993-07-14 | Hitachi Europ Ltd | Quantum structure devices |
JP3621367B2 (ja) * | 2001-09-17 | 2005-02-16 | 株式会社東芝 | スピントランジスタ |
KR100658025B1 (ko) * | 2002-01-15 | 2006-12-15 | 아사히 가세이 덴시 가부시끼가이샤 | 화합물 반도체 적층 구조체, 홀 소자 및 홀 소자의 제조방법 |
KR20050081125A (ko) * | 2004-02-11 | 2005-08-18 | 최중범 | 두 양자비트 양자전산 게이트 |
US7135697B2 (en) * | 2004-02-25 | 2006-11-14 | Wisconsin Alumni Research Foundation | Spin readout and initialization in semiconductor quantum dots |
US7492022B2 (en) * | 2004-02-27 | 2009-02-17 | University Of Iowa Research Foundation | Non-magnetic semiconductor spin transistor |
JP2006066603A (ja) | 2004-08-26 | 2006-03-09 | Nippon Telegr & Teleph Corp <Ntt> | 原子核スピン状態制御装置及び検出装置 |
KR100619300B1 (ko) | 2005-09-14 | 2006-09-06 | 한국과학기술연구원 | 스핀-궤도 결합 유도 자장을 이용한 스핀 트랜지스터 |
EP1830410A1 (en) | 2006-02-24 | 2007-09-05 | Hitachi, Ltd. | Single-charge tunnelling device |
KR100709395B1 (ko) * | 2006-06-23 | 2007-04-20 | 한국과학기술연구원 | 강자성체를 이용한 스핀 트랜지스터 |
KR100855105B1 (ko) * | 2007-06-14 | 2008-08-29 | 한국과학기술연구원 | 수직자화를 이용한 스핀 트랜지스터 |
JP4496242B2 (ja) | 2007-08-29 | 2010-07-07 | 株式会社東芝 | スピントランジスタ及び磁気メモリ |
-
2012
- 2012-08-21 CN CN201280039425.2A patent/CN103718303B/zh active Active
- 2012-08-21 WO PCT/JP2012/071025 patent/WO2013027712A1/ja active Application Filing
- 2012-08-21 US US14/240,219 patent/US9450176B2/en active Active
- 2012-08-21 EP EP12825398.6A patent/EP2736080B1/en active Active
- 2012-08-21 KR KR1020147004002A patent/KR101421075B1/ko active IP Right Grant
- 2012-08-21 JP JP2013502951A patent/JP5260810B1/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006032570A (ja) * | 2004-07-14 | 2006-02-02 | Nippon Telegr & Teleph Corp <Ntt> | スピンフィルタ及びスピン状態分離方法 |
JP2011071255A (ja) * | 2009-09-25 | 2011-04-07 | Japan Science & Technology Agency | 電子スピン共鳴生成装置および電子スピン共鳴の生成方法 |
JP2011082388A (ja) * | 2009-10-08 | 2011-04-21 | Saitama Univ | スピントロニクス装置及び論理演算素子 |
Also Published As
Publication number | Publication date |
---|---|
EP2736080A4 (en) | 2015-06-24 |
JPWO2013027712A1 (ja) | 2015-03-19 |
WO2013027712A1 (ja) | 2013-02-28 |
US9450176B2 (en) | 2016-09-20 |
EP2736080A1 (en) | 2014-05-28 |
US20140166985A1 (en) | 2014-06-19 |
CN103718303A (zh) | 2014-04-09 |
CN103718303B (zh) | 2015-05-20 |
KR101421075B1 (ko) | 2014-07-18 |
KR20140029547A (ko) | 2014-03-10 |
EP2736080B1 (en) | 2017-02-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Hamaya et al. | Spin transport and relaxation in germanium | |
Dushenko et al. | Gate-tunable spin-charge conversion and the role of spin-orbit interaction in graphene | |
KR100832583B1 (ko) | 누설자장을 이용한 스핀 트랜지스터 | |
US20050263751A1 (en) | Non-magnetic semiconductor spin transistor | |
KR100709395B1 (ko) | 강자성체를 이용한 스핀 트랜지스터 | |
JP5260810B1 (ja) | 整流装置、トランジスタおよび整流方法 | |
Chen et al. | Electric-field control of interfacial spin–orbit fields | |
US20150311305A1 (en) | Spin mosfet | |
Marin et al. | Tunnel-field-effect spin filter from two-dimensional antiferromagnetic stanene | |
van't Erve et al. | Information processing with pure spin currents in silicon: Spin injection, extraction, manipulation, and detection | |
US8058676B2 (en) | Spin transistor using double carrier supply layer structure | |
JP5237232B2 (ja) | 電子スピン共鳴生成装置および電子スピン共鳴の生成方法 | |
Ciorga | Electrical spin injection and detection in high mobility 2DEG systems | |
KR101753342B1 (ko) | 상온 작동 스핀제어전자소자 | |
US8183611B2 (en) | Spin transistor using N-type and P-type double carrier supply layer structure | |
Jiang et al. | Tunneling magnetoresistance properties in ballistic spin field-effect transistors | |
Sun et al. | Spin injection, relaxation, and manipulation in GaN-based semiconductors | |
JP5248446B2 (ja) | 電子回路 | |
Nitta et al. | Electrical manipulation of spin precession in an InGaAs-Based 2DEG due to the Rashba Spin-Orbit Interaction | |
Ohya et al. | Quantum-level control in a III–V-based ferromagnetic-semiconductor heterostructure with a GaMnAs quantum well and double barriers | |
Böer et al. | Carrier Transport in Low-Dimensional Semiconductors | |
Munusami et al. | Group III–V semiconductor high electron mobility transistor on Si substrate | |
JP2009200351A (ja) | 半導体スピンデバイス及びスピンfet | |
Nakane et al. | Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion Channel | |
Zhang et al. | Large and controllable tunneling magnetoresistance in ferromagnetic/magnetic-semiconductor/ferromagnetic trilayers |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130423 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130425 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160502 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5260810 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |