WO2003029354A1 - Organic semiconductor material and organic semiconductor element employing the same - Google Patents

Organic semiconductor material and organic semiconductor element employing the same Download PDF

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Publication number
WO2003029354A1
WO2003029354A1 PCT/JP2002/009851 JP0209851W WO03029354A1 WO 2003029354 A1 WO2003029354 A1 WO 2003029354A1 JP 0209851 W JP0209851 W JP 0209851W WO 03029354 A1 WO03029354 A1 WO 03029354A1
Authority
WO
WIPO (PCT)
Prior art keywords
organic semiconductor
semiconductor material
same
element employing
semiconductor element
Prior art date
Application number
PCT/JP2002/009851
Other languages
English (en)
French (fr)
Inventor
Jun Tsukamoto
Junji Mata
Original Assignee
Toray Industries, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Industries, Inc. filed Critical Toray Industries, Inc.
Priority to US10/491,084 priority Critical patent/US7282742B2/en
Priority to DE60238437T priority patent/DE60238437D1/de
Priority to EP02768046A priority patent/EP1449887B1/en
Priority to AT02768046T priority patent/ATE489431T1/de
Priority to KR1020047004449A priority patent/KR100865500B1/ko
Publication of WO2003029354A1 publication Critical patent/WO2003029354A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00—Compositions of unspecified macromolecular compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/04—Carbon
    • C08K3/041—Carbon nanotubes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00—Use of ingredients characterised by shape
    • C08K7/22—Expanded, porous or hollow particles
    • C08K7/24—Expanded, porous or hollow particles inorganic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/60—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
    • H10K30/65—Light-sensitive field-effect devices, e.g. phototransistors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114—Poly-phenylenevinylene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Bipolar Transistors (AREA)
PCT/JP2002/009851 2001-09-27 2002-09-25 Organic semiconductor material and organic semiconductor element employing the same WO2003029354A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US10/491,084 US7282742B2 (en) 2001-09-27 2002-09-25 Organic semiconductor material and organic semiconductor element employing the same including carbon nanotubes
DE60238437T DE60238437D1 (de) 2001-09-27 2002-09-25 Organisches halbleitermaterial und organisches hal
EP02768046A EP1449887B1 (en) 2001-09-27 2002-09-25 Organic semiconductor material and organic semiconductor element employing the same
AT02768046T ATE489431T1 (de) 2001-09-27 2002-09-25 Organisches halbleitermaterial und organisches halbleiterelement, bei dem dieses eingesetzt wird
KR1020047004449A KR100865500B1 (ko) 2001-09-27 2002-09-25 유기 반도체 소재 및 이것을 사용한 유기 반도체 소자

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001295899A JP5061414B2 (ja) 2001-09-27 2001-09-27 薄膜トランジスタ素子
JP2001-295899 2001-09-27

Publications (1)

Publication Number Publication Date
WO2003029354A1 true WO2003029354A1 (en) 2003-04-10

Family

ID=19117249

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/009851 WO2003029354A1 (en) 2001-09-27 2002-09-25 Organic semiconductor material and organic semiconductor element employing the same

Country Status (8)

Country Link
US (1) US7282742B2 (ja)
EP (1) EP1449887B1 (ja)
JP (1) JP5061414B2 (ja)
KR (1) KR100865500B1 (ja)
CN (1) CN1300254C (ja)
AT (1) ATE489431T1 (ja)
DE (1) DE60238437D1 (ja)
WO (1) WO2003029354A1 (ja)

Cited By (10)

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WO2004029152A1 (ja) * 2002-09-26 2004-04-08 Zeon Corporation 脂環式構造含有重合体樹脂組成物及び成形体
EP1487028A1 (en) 2003-05-07 2004-12-15 Sony Corporation Field effect transistor and method for manufacturing the same
JP2005322870A (ja) * 2004-05-04 2005-11-17 Ind Technol Res Inst 有機装置の電気性質を向上する方法
FR2873493A1 (fr) * 2004-07-20 2006-01-27 Commissariat Energie Atomique Dispositif semiconducteur a nanotube ou nanofil, configurable optiquement
JP2007099611A (ja) * 2005-10-05 2007-04-19 Samsung Electronics Co Ltd カーボンナノチューブ用分散剤およびこれを含む組成物
US7323730B2 (en) 2004-07-21 2008-01-29 Commissariat A L'energie Atomique Optically-configurable nanotube or nanowire semiconductor device
US7517719B2 (en) * 2004-07-19 2009-04-14 Seiko Epson Corporation Method for fabricating a semiconductor element from a dispersion of semiconductor particles
WO2010036397A3 (en) * 2008-05-01 2010-06-10 The Regents Of The University Of Michigan Improved polymer wrapped carbon nanotube near-infrared photoactive devices
US7982130B2 (en) 2008-05-01 2011-07-19 The Regents Of The University Of Michigan Polymer wrapped carbon nanotube near-infrared photovoltaic devices
US8349903B2 (en) 2007-02-27 2013-01-08 Samsung Electronics Co., Ltd. Dispersant for carbon nanotubes and carbon nanotube composition comprising the same

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JP4572543B2 (ja) * 2003-02-14 2010-11-04 東レ株式会社 電界効果型トランジスタ並びにそれを用いた液晶表示装置
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KR102307470B1 (ko) * 2013-10-08 2021-09-29 한양대학교 산학협력단 유연소자의 제조방법, 그에 의하여 제조된 유연소자 및 접합소자
WO2016118071A1 (en) * 2015-01-23 2016-07-28 Barbero David Method for producing a conductive composite material
US10991894B2 (en) 2015-03-19 2021-04-27 Foundation Of Soongsil University-Industry Cooperation Compound of organic semiconductor and organic semiconductor device using the same
US10431758B2 (en) 2016-10-10 2019-10-01 Boe Technology Group Co., Ltd. Thin film transistor, display panel and display apparatus having the same, and fabricating method thereof
CN108807672B (zh) * 2017-04-28 2020-03-17 清华大学 有机薄膜晶体管及其制备方法
CN108675283B (zh) * 2018-04-04 2019-07-16 朱晶晶 一种利用石墨烯制备的复合纳米电磁波吸收材料及其制备方法
CN111584713A (zh) * 2020-04-10 2020-08-25 辽宁石油化工大学 一种半导体型共轭聚合物/碳纳米管复合材料光电转换薄膜的制备方法

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EP1449887B1 (en) 2010-11-24
US7282742B2 (en) 2007-10-16
EP1449887A4 (en) 2004-11-17
KR100865500B1 (ko) 2008-10-28
ATE489431T1 (de) 2010-12-15
US20040241900A1 (en) 2004-12-02
CN1300254C (zh) 2007-02-14
JP2003096313A (ja) 2003-04-03
JP5061414B2 (ja) 2012-10-31
KR20040039425A (ko) 2004-05-10
EP1449887A1 (en) 2004-08-25
DE60238437D1 (de) 2011-01-05

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