JP2005322870A - 有機装置の電気性質を向上する方法 - Google Patents
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- 238000010586 diagram Methods 0.000 description 5
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 5
- 125000000217 alkyl group Chemical group 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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- H10K85/211—Fullerenes, e.g. C60
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Abstract
【解決手段】 ゲート及び絶縁層が形成された装置基板を提供し、有機半導体高分子材料、有機絶縁高分子材料、導電粒子と溶剤を混合し有機溶液を形成し、該有機溶液を使用して有機半導体層を該絶縁層の上に形成する。そのうち、該有機半導体高分子材料は、ポリ−3−アルキルチオフェン(P3AT)より選択し、該有機絶縁高分子材料はポリメチルメタクリレート(PMMA)、ポリブチレンテレフタレート(PBT)等の相互に類似の材料より選択し、該導電粒子はカーボンナノチューブ(CNT)、カーボン60及びナノ銀粒子等の相互に類似の導電材料より選択する。該溶剤はキシレン、トルエン及びTHF等の相互に類似の溶剤より選択する。
【選択図】 図1
Description
1.製造完成した有機薄膜トランジスタの電流のオンオフ比がいずれも非常に低く、有機薄膜トランジスタの特性に厳重な影響を与え、有機薄膜トランジスタの実用性が大きくならない。
2.小分子及びモノマーの有機薄膜トランジスタ製造に必要なステップは無機薄膜トランジスタの煩瑣で且つ速度が遅い製造工程とは異なるが、真空設備を組合せなければ実施できず、このため大幅に製造コストが増す。
3.クロロホルムの使用は工業界の使用の標準に符合せず且つ環境保護に符合せず、将来的な量産の可能性に影響を及ぼし、間接的に研究開発の意欲を下げる。
ゲート及び絶縁層が形成された装置基板を提供する工程、
有機半導体高分子材料、有機絶縁高分子材料、導電粒子と溶剤を混合し有機溶液を形成する工程、
該有機溶液を使用して有機半導体層を該絶縁層の上に形成する工程を具え、
そのうち、該有機半導体高分子材料は、ポリ−3−アルキルチオフェン(poly3−alkylthiophene;P3AT)より選択し、該有機絶縁高分子材料はポリメチルメタクリレート(PMMA)、ポリブチレンテレフタレート(PBT)より選択し、該導電粒子はカーボンナノチューブ(CNT)、カーボン60及びナノ銀粒子より選択し、該溶剤はキシレン、トルエン及びTHFより選択することを特徴とする、有機装置の電気性質を向上する方法としている。
102 絶縁層 103 ソース
104 ドレイン 105 有機半導体層
1 有機薄膜トランジスタ
Claims (1)
- 有機薄膜トランジスタの電気性質を向上するのに用いられる有機装置の電気性質を向上する方法において、
ゲート及び絶縁層が形成された装置基板を提供する工程、
有機半導体高分子材料、有機絶縁高分子材料、導電粒子と溶剤を混合し有機溶液を形成する工程、
該有機溶液を使用して有機半導体層を該絶縁層の上に形成する工程を具え、
そのうち、該有機半導体高分子材料は、ポリ−3−アルキルチオフェン(poly3−alkylthiophene;P3AT)より選択し、該有機絶縁高分子材料はポリメチルメタクリレート(PMMA)、ポリブチレンテレフタレート(PBT)より選択し、該導電粒子はカーボンナノチューブ(CNT)、カーボン60及びナノ銀粒子より選択し、該溶剤はキシレン、トルエン及びTHFより選択することを特徴とする、有機装置の電気性質を向上する方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW093112454A TWI228833B (en) | 2004-05-04 | 2004-05-04 | Method for enhancing the electrical characteristics of organic electronic devices |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005322870A true JP2005322870A (ja) | 2005-11-17 |
JP4162639B2 JP4162639B2 (ja) | 2008-10-08 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004210177A Expired - Fee Related JP4162639B2 (ja) | 2004-05-04 | 2004-07-16 | 有機装置の電気性質を向上する方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20050221530A1 (ja) |
JP (1) | JP4162639B2 (ja) |
TW (1) | TWI228833B (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100756817B1 (ko) * | 2006-04-06 | 2007-09-07 | 비오이 하이디스 테크놀로지 주식회사 | 박막 트랜지스터의 제조 방법 |
JP2010010525A (ja) * | 2008-06-30 | 2010-01-14 | Sony Corp | 電子デバイス及びその製造方法、並びに、半導体装置及びその製造方法 |
WO2010071268A1 (en) * | 2008-12-18 | 2010-06-24 | Postech Academy-Industry Foundation | Method of manufacturing multilayered thin film through phase separation of blend of organic semiconductor/insulating polymer and organic thin film transistor using the same |
WO2010071267A1 (en) * | 2008-12-18 | 2010-06-24 | Postech Academy-Industry Foundation | Method of manufacturing organic semiconductor nanofibrillar network dispersed in insulating polymer using a blend of organic semiconductor/insulating polymer and organic thin film transistor using the same |
JP2014013920A (ja) * | 2013-08-21 | 2014-01-23 | Hiroshima Univ | 有機半導体組成物 |
Families Citing this family (13)
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US7563711B1 (en) * | 2001-07-25 | 2009-07-21 | Nantero, Inc. | Method of forming a carbon nanotube-based contact to semiconductor |
GB2416428A (en) * | 2004-07-19 | 2006-01-25 | Seiko Epson Corp | Method for fabricating a semiconductor element from a dispersion of semiconductor particles |
JP2007129007A (ja) * | 2005-11-02 | 2007-05-24 | Hitachi Ltd | 有機半導体膜を有する半導体装置の製造方法 |
WO2007089322A2 (en) * | 2005-11-23 | 2007-08-09 | William Marsh Rice University | PREPARATION OF THIN FILM TRANSISTORS (TFTs) OR RADIO FREQUENCY IDENTIFICATION (RFID) TAGS OR OTHER PRINTABLE ELECTRONICS USING INK-JET PRINTER AND CARBON NANOTUBE INKS |
US20070275498A1 (en) * | 2006-05-26 | 2007-11-29 | Paul Beecher | Enhancing performance in ink-jet printed organic semiconductors |
KR101206661B1 (ko) * | 2006-06-02 | 2012-11-30 | 삼성전자주식회사 | 동일 계열의 소재로 형성된 반도체층 및 소스/드레인전극을 포함하는 유기 전자 소자 |
CN101689607A (zh) * | 2007-06-28 | 2010-03-31 | 3M创新有限公司 | 结合界面导电簇的薄膜晶体管 |
US8319206B2 (en) * | 2007-11-29 | 2012-11-27 | Xerox Corporation | Thin film transistors comprising surface modified carbon nanotubes |
JP4730623B2 (ja) * | 2008-07-24 | 2011-07-20 | ソニー株式会社 | 薄膜トランジスタ、薄膜トランジスタの製造方法、および電子機器 |
US8164089B2 (en) * | 2009-10-08 | 2012-04-24 | Xerox Corporation | Electronic device |
CN103236442B (zh) | 2013-04-23 | 2016-12-28 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制造方法、阵列基板、电子装置 |
CN103730574A (zh) * | 2013-12-30 | 2014-04-16 | 合肥工业大学 | 一种有机薄膜晶体管及其制备方法 |
CN113193115B (zh) * | 2021-05-19 | 2023-05-12 | 电子科技大学 | 一种悬空碳纳米管场效应晶体管及其制备方法 |
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- 2004-06-30 US US10/879,168 patent/US20050221530A1/en not_active Abandoned
- 2004-07-16 JP JP2004210177A patent/JP4162639B2/ja not_active Expired - Fee Related
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JP4162639B2 (ja) | 2008-10-08 |
TW200537689A (en) | 2005-11-16 |
TWI228833B (en) | 2005-03-01 |
US20050221530A1 (en) | 2005-10-06 |
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