WO2002101840A1 - Element semi-conducteur a base de nitrure du groupe iii et procede de fabrication associe - Google Patents
Element semi-conducteur a base de nitrure du groupe iii et procede de fabrication associe Download PDFInfo
- Publication number
- WO2002101840A1 WO2002101840A1 PCT/JP2002/005429 JP0205429W WO02101840A1 WO 2002101840 A1 WO2002101840 A1 WO 2002101840A1 JP 0205429 W JP0205429 W JP 0205429W WO 02101840 A1 WO02101840 A1 WO 02101840A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- compound semiconductor
- underlayer
- group iii
- nitride
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 89
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 16
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 9
- 239000010980 sapphire Substances 0.000 claims abstract description 9
- -1 nitride compound Chemical class 0.000 claims description 40
- 150000001875 compounds Chemical class 0.000 claims description 32
- 238000000926 separation method Methods 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 239000010936 titanium Substances 0.000 claims description 22
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 15
- 229910002601 GaN Inorganic materials 0.000 claims description 11
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 11
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 10
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 9
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 5
- 229910052735 hafnium Inorganic materials 0.000 claims description 5
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 229910005540 GaP Inorganic materials 0.000 claims description 4
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 238000007751 thermal spraying Methods 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 14
- 238000005507 spraying Methods 0.000 abstract description 5
- 238000003486 chemical etching Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 15
- 239000007921 spray Substances 0.000 description 13
- 239000013078 crystal Substances 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 239000011777 magnesium Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical group [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 125000005842 heteroatom Chemical group 0.000 description 4
- 238000007733 ion plating Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 150000004820 halides Chemical class 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002932 luster Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 238000005118 spray pyrolysis Methods 0.000 description 2
- 229910052716 thallium Inorganic materials 0.000 description 2
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 241000700560 Molluscum contagiosum virus Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical group [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 235000002639 sodium chloride Nutrition 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/18—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02469—Group 12/16 materials
- H01L21/02472—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/918—Light emitting regenerative switching device, e.g. light emitting scr arrays, circuitry
Definitions
- the present invention relates to a Group III nitride compound semiconductor device and a method for manufacturing the same.
- Japanese Patent Application Laid-Open No. Hei 9-12379738 discloses that in order to obtain a good crystalline III nitride compound semiconductor layer, a metal nitride having a rock salt structure is used as an underlayer. It discloses that the surface is used as a substrate. That is, in this publication, a metal nitride having a rock-salt structure is used as a substrate, and a group II nitride-based compound semiconductor layer is grown on the (111) plane.
- Semiconductor device substrates are required to have characteristics (rigidity, impact resistance, etc.) to maintain the function of the device.
- characteristics rigidity, impact resistance, etc.
- the substrate is formed of metal nitride, it is considered that a thickness of, for example, 50 ⁇ or more is required for the substrate to maintain the characteristics.
- metal nitrides having such a thickness have not been provided as raw materials for industrial products for semiconductor manufacturing.
- an object of the present invention is to enable the formation of a group II nitride-based compound semiconductor layer having a good crystal structure using raw materials that are easily available industrially. Therefore, the semiconductor element of the present invention has a semiconductor layer with a favorable crystal structure and can be manufactured at low cost.
- another object of the present invention is to provide a group II nitride-based compound semiconductor device having a novel substrate and a method of manufacturing the same. Disclosure of the invention
- a separation layer is formed on an auxiliary substrate, a base layer is formed on the separation layer, a sprayed layer is formed on the base layer, and the separation layer is formed from the base layer. Separating, and forming a group III nitride-based compound semiconductor layer on a surface of the underlayer opposite to the surface on which the sprayed layer is formed.
- a manufacturing method is provided.
- the base layer is formed on the auxiliary substrate via the separation layer.
- a material capable of growing a Group II nitride-based compound semiconductor layer with good crystallinity can be selected.
- a thermal spray layer is formed on the underlayer. According to thermal spraying, a thick layer having sufficient rigidity as a substrate can be easily formed. After separating the separation layer from the underlayer and exposing the underlayer, a group III nitride-based compound semiconductor layer can be formed on the surface of the underlayer using the sprayed layer as a substrate.
- an III group nitride-based compound semiconductor layer is grown on the underlayer to form an element structure. Therefore, the underlayer has a preferable structure for growing a group III nitride compound semiconductor.
- FIG. 1 is a diagram showing a method for manufacturing a light emitting diode according to an embodiment of the present invention.
- FIG. 2 is a diagram showing a configuration of a light emitting diode according to an embodiment of the present invention.
- FIG. 3 is a diagram showing a configuration of a light emitting diode according to another embodiment of the present invention.
- a group II nitride compound semiconductor layer is grown on an underlayer, and an element structure such as a light emitting diode is constructed by the group III nitride compound semiconductor layer. Therefore, the underlayer needs to have a crystal structure suitable for growing a group III nitride compound semiconductor. Therefore, the auxiliary substrate and the separation layer supporting the underlayer are selected to be suitable for the formation of the underlayer. From the above viewpoints, each of the auxiliary substrate, the separation layer, and the underlayer will be described below. Auxiliary board
- Auxiliary substrates include sapphire, hexagonal materials such as SiC (silicon carbide) and GaN (gallium nitride), Si (silicon), GaP (gallium phosphide), and GaAs (arsenic).
- a cubic material such as gallium can be used.
- an underlayer is grown thereon.
- a cubic material its (1 1 1) plane is used. Separation layer
- the separation layer is to be separated from the underlying layer later.
- Ti is used as the separation layer.
- Z ⁇ ⁇ can also be used as another material.
- the titanium layer is formed on the substrate by a method such as DC sputtering, ion plating, or spray pyrolysis.
- the thickness of the titanium layer is not particularly limited, but is preferably 0.1 to 10 / m. More preferably, it is from 0.2 to 5 / im, most preferably from 0.2 to 3 / im.
- the titanium layer can be chemically etched with an acid (aqua regia). This separates the auxiliary substrate from the underlayer. If the thermal spray layer and the underlayer are made conductive, they can be used as electrodes, so that only one electrode needs to be formed on the group III-Nitride compound semiconductor layer side. Underlayer
- a nitride of one or more metals selected from titanium, hafnium, zirconium or tantalum having a rock salt structure is used as a material for the underlayer.
- titanium nitride is preferred.
- Such a metal nitride has a very small lattice mismatch with the Group III nitride compound semiconductor formed thereon.
- the metal nitride can be formed with good crystallinity on the titanium layer, and the titanium layer can be formed with good crystallinity on a substrate such as sapphire.
- the thickness required for maintaining the function of the element can be provided in a thermal spray layer formed later, so that the underlayer can be made thinner. Therefore, The underlayer can be formed easily and inexpensively. Since the thermal spray layer can be formed efficiently, the device can be manufactured at low cost as a whole.
- a Group III nitride compound semiconductor such as GaN, ZnO, or SiC can be used as the underlayer.
- the underlayer can also be formed of a material composed of (Ti x X AX ) N.
- a metal component A of (T i! X A x) of N metal nitride, aluminum (A l), gallium (G a) and one or more Group III selected from Injiumu (I n) Elements can be selected.
- a 1 is preferable because the difference in lattice constant is small.
- At least a part of the group III element may be replaced with boron (B), thallium (T 1) or the like.
- metal nitride made of TiN can be provided with conductivity, electrodes can be formed on both surfaces of the semiconductor element at that time, which reduces the number of element manufacturing steps and reduces costs.
- the composition X of the metal A is set to 0.01 to 0.6, the metal nitride has a necessary conductivity. More preferable composition X of the metal A is 0.1 to 0.6. And more preferably 0.2 to 0.6.
- Such a metal nitride layer has a smaller lattice mismatch with a group III nitride-based compound semiconductor layer formed thereon than a binary metal nitride layer made of TiN or the like. Thus, the crystallinity of the group III nitride compound semiconductor layer can be improved.
- the metal nitride layer composed of (T i! _ X A X ) N contains T i as a component, it can be formed with good crystallinity on the titanium layer, and the titanium layer can be formed on a substrate such as sapphire. It can be formed with good crystallinity.
- the method for producing the underlayer is not particularly limited, but methods such as DC sputtering, ion plating, spray pyrolysis, MOCVD, MBE, and halide can be used.
- the underlayer is preferably formed at a high temperature. This is because growing at a high temperature improves the crystallinity.
- a metal nitride layer is formed as a base layer on a titanium layer, it is particularly preferable to employ a sputtering method. This is because the crystallinity of the metal nitride single crystal is improved.
- the thickness of the underlayer is not particularly limited, but is preferably 0.1 to 10 ⁇ . More preferably, it is l-5 / im.
- the underlayer preferably has conductivity from the viewpoint of forming electrodes on both surfaces of the semiconductor element.
- the underlayer preferably has metallic luster. This is for efficiently reflecting light emitted from the light emitting layer.
- Thermal spray layer
- a thermal spray layer is formed on the underlayer.
- the material and thickness of the element are not particularly limited as long as the element has characteristics as a substrate.
- TiN is preferable as the material of the thermal spray layer from the viewpoint of obtaining a preferable crystal structure for the underlayer.
- T i N has conductivity.
- electrodes can be formed on both surfaces of the semiconductor element, and the number of element manufacturing steps is reduced, resulting in cost reduction.
- TiN formed by gas tunneling plasma reaction spray has a metallic luster, and light emitted from the LED is efficiently reflected to increase brightness.
- TiN is a material that is more flexible than sapphire, and especially when sprayed becomes a fine layer, the difference in lattice constant between the substrate and the Group III nitride compound semiconductor layer and thermal expansion. It also has the effect of alleviating strain (internal stress) due to differences in coefficients.
- the substrate is required to have properties (rigidity, impact resistance) to maintain the function of the element. Therefore, the thickness of the sprayed layer is preferably 50 m or more. More preferably, it is at least 100 / in. However, as long as rigidity can be maintained, it may be thin.
- Plasma reaction spraying is preferred as the method for spraying TiN.
- Any method can be selected as a method for separating the separation layer.
- etching can be performed with a strong acid (hydrofluoric acid, aqua regia, etc.).
- a strong acid hydrofluoric acid, aqua regia, etc.
- the group III nitride compound semiconductor has the general formula A 1 X G a Y I n! _ ⁇ _ ⁇ ⁇ (0 ⁇ 1, 0 ⁇ ⁇ 1, 10 ⁇ ⁇ + ⁇ 1) So-called binary system of A 1 ⁇ , G a ⁇ and In n, A l xG a — A lx I n - X N and G a x I n: include (In the above 0 ⁇ x ⁇ 1) _ X N so-called ternary. At least a part of group III elements may be replaced by boron (B), thallium (T 1), etc.
- At least a part of nitrogen (N) may be replaced by phosphorus (P), arsenic (A s;), It can be replaced with antimony (Sb), bismuth (Bi), etc.
- the group III nitride compound semiconductor layer may contain any dopant. Si, Ge, Se, Te, C, etc. can be used as the n-type impurity. Mg, Zn, Be, Ca, Sr, Ba and the like can be used as the p-type impurities. It is possible, but not essential, to expose the group III nitride compound semiconductor to electron beam irradiation, plasma irradiation, or heating in a furnace after doping with the p-type impurity.
- the method of forming the group III nitride-based compound semiconductor layer is not particularly limited.
- MOCVD metal organic chemical vapor deposition
- MBE molecular beam crystal growth
- HVPE method halide vapor deposition
- sputtering method ion plating method, electron shower method and the like.
- an ELO (EpitaxialarLatereralOlevergowth) method may be employed (see Japanese Patent Application Laid-Open No. 10-312971).
- a light-emitting element having a homo structure, a single hetero structure, or a double hetero structure can be used.
- a quantum well structure single quantum well structure or multiple quantum well structure
- the buffer layer is made of a first group III nitride compound semiconductor.
- a quaternary compound semiconductor represented by A a ternary compound semiconductor represented by A 1 X G a X _ X N (0 ⁇ X ⁇ 1), and A 1 N, 0 & 1 ⁇ and 11 1? ⁇ Is included.
- a first group III nitride compound semiconductor layer such as A1N or GaN is directly formed on a substrate such as sapphire at a temperature as low as 600 ° C or less, for example, about 400 ° C. Had formed.
- the semiconductor layer must be grown at a high temperature of about 1000 ° C. A more suitable crystal can be obtained. Accordingly, the crystallinity of the second group III nitride compound semiconductor layer formed on the buffer layer having good crystallinity is also improved.
- the above temperature of about 1,000 ° C is the growth temperature of the second Group III nitride-based compound semiconductor layer (element functional constituent layer) formed on the first Group III nitride-based compound semiconductor layer (buffer layer).
- the growth temperature when forming the first group III nitride compound semiconductor by the MOCVD method is preferably 600 to 1200 ° C, more preferably 800 to 1200 ° C.
- the MOCV D method is executed. Temperature control at the time becomes easy.
- a buffer layer composed of the first group III nitride compound semiconductor layer is formed on the underlayer by sputtering, it is the same as when a buffer layer is formed by MOCVD (growth temperature: 1 000 ° C). A more suitable crystalline buffer layer can be obtained. Therefore, the crystallinity of the second group III nitride compound semiconductor layer formed on the first group III nitride compound semiconductor layer is also improved. Furthermore, when the first group nitride-based compound semiconductor layer (buffer layer) is formed by the sputtering method, expensive organic metals such as TMA and TMI are not required for the raw material as compared with the MOCVD method. Therefore, an element can be formed at low cost. See JP-A-2000-323753. Example
- a TiN layer (3 // in) is formed as the underlayer 3 at the same temperature of 450 ° C. by reactive DC magnetron sputtering.
- a TiN sprayed layer 4 is formed to a thickness of 300 ⁇ by gas tunnel type plasma reaction spraying.
- the substrate temperature is preferably set to 650 ° C. or lower. This is because the crystal structure of Ti changes at 700 ° C. or higher.
- the light emitting diode 10 shown in FIG. 2 is formed by a conventional method using the thermal spray layer 4 and the underlayer 3 as substrates.
- n-type layer 1 6 n -G a N S i
- the n-type layer is formed of G a N, but Al G a N, 1: 03 ⁇ or 1 In G a N can be used.
- the n-type layer is doped with Si as an n-type impurity, but Ge, Se, Te, C, etc. can be used as the n-type impurity.
- the n-type layer 16 can have a two-layer structure including a low electron concentration n ⁇ layer on the layer 17 side including the light emitting layer and a high electron concentration n + layer on the buffer layer 15 side.
- the layer 17 including a light emitting layer may include a light emitting layer having a quantum well structure, and the light emitting element may be of a single hetero type, a double hetero type, or a homo junction type.
- the layer 17 including the light emitting layer may include a wide bandgap group III nitride-based compound semiconductor layer in which an acceptor such as magnesium is doped on the p-type layer 18 side. This is to effectively prevent electrons injected into the layer 17 including the light emitting layer from diffusing into the p-type layer 18.
- a P-type layer 18 made of GaN doped with Mg as a p-type impurity was formed on the layer 17 including the light-emitting layer.
- the p-type layer may be Al GaN, 1110 & 1 ⁇ or 111 GaN, and the p-type impurities may be 2! 1, 86, ji &, 31 ", Ba can also be used.
- a two-layer structure including a low hole concentration p ⁇ layer on the layer 17 side including the layer emitting the p-type layer 18 and a high hole concentration p + layer on the electrode side can be obtained.
- each group III nitride compound semiconductor layer is formed by performing MOC VD under general conditions.
- ammonia gas and an alkyl compound gas of a group III element such as trimethylgallium (TMG), trimethylaluminum (TMA) and trimethylindium (TMI) are supplied onto a substrate heated to an appropriate temperature.
- TMG trimethylgallium
- TMA trimethylaluminum
- TMI trimethylindium
- the crystallinity of the group III nitride compound semiconductor layers 16 to 18 thus formed is preferable.
- a Group III nitride-based compound semiconductor layer is formed by a method such as molecular beam crystal growth (MBE), halide vapor deposition (HVPE), sputtering, ion plating, and electron showering. You can also.
- MBE molecular beam crystal growth
- HVPE halide vapor deposition
- sputtering ion plating
- electron showering electron showering
- the translucent electrode 19 is a thin film containing gold, and is laminated so as to cover substantially the entire upper surface of the p-type layer 18.
- the p-electrode 20 is also made of a material containing gold, and transmits light by evaporation. Formed on the negative electrode 19.
- the A 1 N buffer layer 15 may be formed by a MOCVD method or may be formed by a sputtering method.
- FIG. 3 shows a semiconductor device according to a second embodiment of the present invention.
- the semiconductor device of this embodiment is a light emitting diode 32.
- the same elements as those in FIG. 2 are denoted by the same reference numerals, and description thereof will be omitted.
- n-type layer 28 n -G a N: S i
- P-type layer 26 p-GaN: Mg
- Nokufa layer 1 5 A 1 N
- a light-emitting diode 32 is formed by sequentially growing a p-type layer 26, a layer 17 including a light-emitting layer, and an n-type layer 28 on the buffer layer 15.
- the n-type layer 28 having a low resistance value is the uppermost surface, it is possible to omit the translucent electrode (see reference numeral 19 in FIG. 2).
- Reference numeral 30 in the figure denotes an n-electrode.
- the sprayed layer 4 can be used as it is as a p-electrode.
- the A 1 N buffer layer 15 may or may not be formed by the MOC VD method.
- the device to which the present invention is applied is not limited to the above-described light emitting diode.
- optical devices such as laser diodes and solar cells, rectifiers, bipolar devices such as thyristors and transistors, unipolar devices such as FETs, and microphones. It can also be applied to electronic devices such as mouth wave devices.
- the present invention is also applied to a laminate as an intermediate of these devices.
- the separation layer can also be formed by thermal spraying (material: Ti, ZnO, etc.). It is also possible to form a sprayed layer on Ti or Z ⁇ as a separation layer without interposing an underlayer. In this case, after separating the separation layer, a semiconductor layer is laminated on the sprayed layer.
- An underlayer made of a group III nitride compound semiconductor can be formed by the MOCVD method.
- the material of the sprayed layer it is also possible to use a T i 0 2 outside the T i N. Thereby mixing the T i 0 2 two weapons i N and / or Z n O. Further, the sprayed layer can be formed in multiple stages. For example, thinly spray TiN, heat-treat it, and spray TiN again. The crystal structure of the underlayer is improved by the heat treatment.
- the separation layer is made of titanium, and in the step of forming the underlayer, one or two or more metal nitrides selected from titanium, hafnium, zirconium or tantalum are sputtered on the separation layer.
- the underlayer is a group II nitride compound semiconductor or silicon carbide.
- auxiliary substrate is sapphire, silicon carbide, gallium nitride, silicon, gallium phosphide, or gallium arsenide.
- a laminate comprising: a substrate formed by thermal spraying; an underlayer formed on the substrate; and a group III nitride-based compound semiconductor layer epitaxially grown on the underlayer.
- the underlayer is a nitride of one or more metals selected from titanium, hafnium, zirconium or tantalum, a Group II nitride compound semiconductor, or silicon carbide, and the substrate is titanium nitride.
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE60229382T DE60229382D1 (de) | 2001-06-06 | 2002-06-03 | Halbleiterbauelement auf gruppe-iii-nitrid-basis und verfahren zu seiner herstellung |
EP02730875A EP1394865B1 (en) | 2001-06-06 | 2002-06-03 | Iii group nitride based semiconductor element and method for manufacture thereof |
US10/479,590 US6875629B2 (en) | 2001-06-06 | 2002-06-03 | III group nitride based semiconductor element and method for manufacture thereof |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001170910A JP3812368B2 (ja) | 2001-06-06 | 2001-06-06 | Iii族窒化物系化合物半導体素子及びその製造方法 |
JP2001-170910 | 2001-06-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002101840A1 true WO2002101840A1 (fr) | 2002-12-19 |
Family
ID=19012760
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2002/005429 WO2002101840A1 (fr) | 2001-06-06 | 2002-06-03 | Element semi-conducteur a base de nitrure du groupe iii et procede de fabrication associe |
Country Status (6)
Country | Link |
---|---|
US (1) | US6875629B2 (ja) |
EP (1) | EP1394865B1 (ja) |
JP (1) | JP3812368B2 (ja) |
DE (1) | DE60229382D1 (ja) |
TW (1) | TW550835B (ja) |
WO (1) | WO2002101840A1 (ja) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3812368B2 (ja) | 2001-06-06 | 2006-08-23 | 豊田合成株式会社 | Iii族窒化物系化合物半導体素子及びその製造方法 |
DE10309968A1 (de) * | 2003-03-07 | 2004-09-23 | Forschungszentrum Jülich GmbH | Verfahren zur Herstellung eines Schichtsystems umfassend einen metallischen Träger und eine Anodenfunktionsschicht |
CA2592055A1 (en) | 2004-12-27 | 2006-07-06 | Quantum Paper, Inc. | Addressable and printable emissive display |
DE102005035722B9 (de) * | 2005-07-29 | 2021-11-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
CN101248221B (zh) * | 2005-08-25 | 2012-06-06 | 东北技术使者株式会社 | 半导体基板制造方法 |
US7547925B2 (en) | 2005-11-14 | 2009-06-16 | Palo Alto Research Center Incorporated | Superlattice strain relief layer for semiconductor devices |
US20090053845A1 (en) * | 2005-11-14 | 2009-02-26 | Palo Alto Research Center Incorporated | Method For Controlling The Structure And Surface Qualities Of A Thin Film And Product Produced Thereby |
US7501299B2 (en) * | 2005-11-14 | 2009-03-10 | Palo Alto Research Center Incorporated | Method for controlling the structure and surface qualities of a thin film and product produced thereby |
JP4770513B2 (ja) * | 2006-02-27 | 2011-09-14 | 豊田合成株式会社 | 発光素子およびその製造方法 |
US20080054248A1 (en) * | 2006-09-06 | 2008-03-06 | Chua Christopher L | Variable period variable composition supperlattice and devices including same |
WO2008041499A1 (en) * | 2006-09-29 | 2008-04-10 | Showa Denko K.K. | Filming method for iii-group nitride semiconductor laminated structure |
US8852467B2 (en) | 2007-05-31 | 2014-10-07 | Nthdegree Technologies Worldwide Inc | Method of manufacturing a printable composition of a liquid or gel suspension of diodes |
US8674593B2 (en) | 2007-05-31 | 2014-03-18 | Nthdegree Technologies Worldwide Inc | Diode for a printable composition |
US8846457B2 (en) | 2007-05-31 | 2014-09-30 | Nthdegree Technologies Worldwide Inc | Printable composition of a liquid or gel suspension of diodes |
US8456393B2 (en) | 2007-05-31 | 2013-06-04 | Nthdegree Technologies Worldwide Inc | Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system |
US9419179B2 (en) | 2007-05-31 | 2016-08-16 | Nthdegree Technologies Worldwide Inc | Diode for a printable composition |
US8889216B2 (en) | 2007-05-31 | 2014-11-18 | Nthdegree Technologies Worldwide Inc | Method of manufacturing addressable and static electronic displays |
US8809126B2 (en) | 2007-05-31 | 2014-08-19 | Nthdegree Technologies Worldwide Inc | Printable composition of a liquid or gel suspension of diodes |
US9534772B2 (en) | 2007-05-31 | 2017-01-03 | Nthdegree Technologies Worldwide Inc | Apparatus with light emitting diodes |
US8877101B2 (en) | 2007-05-31 | 2014-11-04 | Nthdegree Technologies Worldwide Inc | Method of manufacturing a light emitting, power generating or other electronic apparatus |
US9018833B2 (en) | 2007-05-31 | 2015-04-28 | Nthdegree Technologies Worldwide Inc | Apparatus with light emitting or absorbing diodes |
US9425357B2 (en) | 2007-05-31 | 2016-08-23 | Nthdegree Technologies Worldwide Inc. | Diode for a printable composition |
US8415879B2 (en) | 2007-05-31 | 2013-04-09 | Nthdegree Technologies Worldwide Inc | Diode for a printable composition |
US8133768B2 (en) * | 2007-05-31 | 2012-03-13 | Nthdegree Technologies Worldwide Inc | Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system |
US9343593B2 (en) | 2007-05-31 | 2016-05-17 | Nthdegree Technologies Worldwide Inc | Printable composition of a liquid or gel suspension of diodes |
US7992332B2 (en) | 2008-05-13 | 2011-08-09 | Nthdegree Technologies Worldwide Inc. | Apparatuses for providing power for illumination of a display object |
US8127477B2 (en) | 2008-05-13 | 2012-03-06 | Nthdegree Technologies Worldwide Inc | Illuminating display systems |
US8852994B2 (en) | 2010-05-24 | 2014-10-07 | Masimo Semiconductor, Inc. | Method of fabricating bifacial tandem solar cells |
US8455290B2 (en) * | 2010-09-04 | 2013-06-04 | Masimo Semiconductor, Inc. | Method of fabricating epitaxial structures |
JP2014154693A (ja) * | 2013-02-08 | 2014-08-25 | Toyoda Gosei Co Ltd | Iii族窒化物半導体発光素子およびその製造方法 |
DE102013211552B3 (de) * | 2013-06-19 | 2014-04-30 | Robert Bosch Gmbh | Heterostruktur-Transistor und Herstellungsverfahren |
WO2015009669A1 (en) * | 2013-07-16 | 2015-01-22 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Lift-off of epitaxial layers from silicon carbide or compound semiconductor substrates |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02277763A (ja) * | 1988-12-20 | 1990-11-14 | Sanyo Electric Co Ltd | 半導体薄膜の成膜方法 |
JPH0355886A (ja) * | 1989-07-25 | 1991-03-11 | Showa Denko Kk | p―n接合を有する立方晶窒化ほう素半導体の製造法 |
JP2000216090A (ja) * | 1999-01-27 | 2000-08-04 | Toshiba Corp | 多結晶半導体素子の製造方法 |
Family Cites Families (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2329618A1 (de) * | 1973-06-09 | 1975-01-02 | Fraunhofer Ges Forschung | Anordnung zur vielfarbigen anzeige, bestehend aus lichtquelle und linearpolarisationsfilter |
JPS5642390A (en) * | 1979-09-14 | 1981-04-20 | Fujitsu Ltd | Formation of electrode on semiconductor device |
US4523848A (en) * | 1981-10-01 | 1985-06-18 | National Research Development Corporation | Polariscope |
US4472737A (en) * | 1982-08-31 | 1984-09-18 | Tokyo Shibaura Denki Kabushiki Kaisha | Stereographic tomogram observing apparatus |
US4649425A (en) * | 1983-07-25 | 1987-03-10 | Pund Marvin L | Stereoscopic display |
NL8500844A (nl) * | 1985-03-22 | 1986-10-16 | Philips Nv | Mr apparaat met twee orthogonale rf spoelenpaar. |
DE3782160T2 (de) * | 1986-09-11 | 1993-02-11 | Hughes Aircraft Co | Digitales simulationssystem zur erzeugung von realistischen szenen. |
GB2215168A (en) * | 1988-02-23 | 1989-09-13 | Ibm | Windows with restricted colour range have priority defined by colour codes |
US5115286A (en) * | 1988-08-26 | 1992-05-19 | Hewlett-Packard Company | Electro-optical device with inverted transparent substrate and method for making same |
US4947257A (en) * | 1988-10-04 | 1990-08-07 | Bell Communications Research, Inc. | Raster assembly processor |
DE4110057A1 (de) * | 1991-03-27 | 1992-10-01 | Hoechst Ag | Verfahren zur herstellung eines mehrfarben-pruefbildes und hierfuer geeignetes strahlungsempfindliches aufzeichnungsmaterial |
US5283560A (en) * | 1991-06-25 | 1994-02-01 | Digital Equipment Corporation | Computer system and method for displaying images with superimposed partially transparent menus |
US5418898A (en) * | 1991-08-07 | 1995-05-23 | Occam Research Corporation | Multidimensional data display system and method |
US5204302A (en) * | 1991-09-05 | 1993-04-20 | Technalum Research, Inc. | Catalyst composition and a method for its preparation |
US5289297A (en) * | 1991-10-02 | 1994-02-22 | Xerox Corporation | Converting lines to other colors |
JPH05283744A (ja) * | 1991-12-20 | 1993-10-29 | Toshiba Corp | 半導体素子 |
US5416895A (en) * | 1992-04-08 | 1995-05-16 | Borland International, Inc. | System and methods for improved spreadsheet interface with user-familiar objects |
US5255028A (en) * | 1992-05-15 | 1993-10-19 | Kevin Biles | Apparatus and method for producing 3-dimensional images |
US5367807A (en) * | 1992-08-28 | 1994-11-29 | Academy Display, Inc. | Flexible adjustable sign support and method of using same |
JP2583003B2 (ja) * | 1992-09-11 | 1997-02-19 | インターナショナル・ビジネス・マシーンズ・コーポレイション | グラフィックス表示システムにおけるイメージ表示方法、フレーム・バッファ及びグラフィックス表示システム |
DE69315969T2 (de) * | 1992-12-15 | 1998-07-30 | Sun Microsystems Inc | Darstellung von Informationen in einem Anzeigesystem mit transparenten Fenstern |
US5638501A (en) * | 1993-05-10 | 1997-06-10 | Apple Computer, Inc. | Method and apparatus for displaying an overlay image |
US6072489A (en) * | 1993-05-10 | 2000-06-06 | Apple Computer, Inc. | Method and apparatus for providing translucent images on a computer display |
JP3184717B2 (ja) | 1993-10-08 | 2001-07-09 | 三菱電線工業株式会社 | GaN単結晶およびその製造方法 |
US5545291A (en) * | 1993-12-17 | 1996-08-13 | The Regents Of The University Of California | Method for fabricating self-assembling microstructures |
JPH07202265A (ja) | 1993-12-27 | 1995-08-04 | Toyoda Gosei Co Ltd | Iii族窒化物半導体の製造方法 |
US5768607A (en) * | 1994-09-30 | 1998-06-16 | Intel Corporation | Method and apparatus for freehand annotation and drawings incorporating sound and for compressing and synchronizing sound |
US5721188A (en) * | 1995-01-17 | 1998-02-24 | Engelhard Corporation | Thermal spray method for adhering a catalytic material to a metallic substrate |
US5663746A (en) * | 1995-01-20 | 1997-09-02 | Miller/Zell, Inc. | Interactive information kiosk assembly |
US5675755A (en) * | 1995-06-07 | 1997-10-07 | Sony Corporation | Window system preventing overlap of multiple always-visible windows |
US5764317A (en) * | 1995-06-26 | 1998-06-09 | Physical Optics Corporation | 3-D volume visualization display |
CA2237588A1 (en) * | 1995-11-13 | 1997-05-22 | The University Of Connecticut | Nanostructured feeds for thermal spray |
JP3779766B2 (ja) | 1996-02-29 | 2006-05-31 | シャープ株式会社 | Iii−v族化合物半導体装置 |
US5805163A (en) * | 1996-04-22 | 1998-09-08 | Ncr Corporation | Darkened transparent window overlapping an opaque window |
JP3139445B2 (ja) | 1997-03-13 | 2001-02-26 | 日本電気株式会社 | GaN系半導体の成長方法およびGaN系半導体膜 |
JP3813740B2 (ja) * | 1997-07-11 | 2006-08-23 | Tdk株式会社 | 電子デバイス用基板 |
US6181349B1 (en) * | 1997-07-21 | 2001-01-30 | International Business Machines Corporation | Data processor controlled display interface with composite graphic objects formed by vector and raster graphics |
US6016385A (en) * | 1997-08-11 | 2000-01-18 | Fanu America Corp | Real time remotely controlled robot |
US6423990B1 (en) * | 1997-09-29 | 2002-07-23 | National Scientific Corporation | Vertical heterojunction bipolar transistor |
US6466185B2 (en) * | 1998-04-20 | 2002-10-15 | Alan Sullivan | Multi-planar volumetric display system and method of operation using psychological vision cues |
US6377229B1 (en) * | 1998-04-20 | 2002-04-23 | Dimensional Media Associates, Inc. | Multi-planar volumetric display system and method of operation using three-dimensional anti-aliasing |
US6590229B1 (en) * | 1999-01-21 | 2003-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and process for production thereof |
EP1039555A1 (en) * | 1999-03-05 | 2000-09-27 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device |
JP3702721B2 (ja) | 1999-03-09 | 2005-10-05 | 豊田合成株式会社 | Iii族窒化物系化合物半導体素子 |
JP2000260760A (ja) * | 1999-03-11 | 2000-09-22 | Toshiba Corp | ウェーハ及び半導体装置の製造方法 |
JP3702700B2 (ja) * | 1999-03-31 | 2005-10-05 | 豊田合成株式会社 | Iii族窒化物系化合物半導体素子及びその製造方法 |
US6176925B1 (en) * | 1999-05-07 | 2001-01-23 | Cbl Technologies, Inc. | Detached and inverted epitaxial regrowth & methods |
KR20010029852A (ko) * | 1999-06-30 | 2001-04-16 | 도다 다다히데 | Ⅲ족 질화물계 화합물 반도체 소자 및 그 제조방법 |
US6531719B2 (en) * | 1999-09-29 | 2003-03-11 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device |
JP2001274528A (ja) * | 2000-01-21 | 2001-10-05 | Fujitsu Ltd | 薄膜デバイスの基板間転写方法 |
JP3812368B2 (ja) | 2001-06-06 | 2006-08-23 | 豊田合成株式会社 | Iii族窒化物系化合物半導体素子及びその製造方法 |
US6953735B2 (en) * | 2001-12-28 | 2005-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating a semiconductor device by transferring a layer to a support with curvature |
JP2003243308A (ja) * | 2002-02-13 | 2003-08-29 | Hitachi Cable Ltd | 半導体装置の製造方法 |
-
2001
- 2001-06-06 JP JP2001170910A patent/JP3812368B2/ja not_active Expired - Fee Related
-
2002
- 2002-06-03 DE DE60229382T patent/DE60229382D1/de not_active Expired - Fee Related
- 2002-06-03 EP EP02730875A patent/EP1394865B1/en not_active Expired - Fee Related
- 2002-06-03 US US10/479,590 patent/US6875629B2/en not_active Expired - Fee Related
- 2002-06-03 WO PCT/JP2002/005429 patent/WO2002101840A1/ja active Application Filing
- 2002-06-06 TW TW091112196A patent/TW550835B/zh not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02277763A (ja) * | 1988-12-20 | 1990-11-14 | Sanyo Electric Co Ltd | 半導体薄膜の成膜方法 |
JPH0355886A (ja) * | 1989-07-25 | 1991-03-11 | Showa Denko Kk | p―n接合を有する立方晶窒化ほう素半導体の製造法 |
JP2000216090A (ja) * | 1999-01-27 | 2000-08-04 | Toshiba Corp | 多結晶半導体素子の製造方法 |
Non-Patent Citations (3)
Title |
---|
AKIRA KOBAYASHI ET AL.: "Gas tunnel-gata plasma hanno yosha ni yoru TiN-maku keisei ni kansuru kenkyu", JAPAN WELDING SOCIETY ZENKOKU TAIKAI KOEN GAIYO, 65TH SERIES, 21 September 1999 (1999-09-21), pages 410 - 411, XP002966381 * |
MASAHIRO FUKUMOTO ET AL.: "Hannosei plasma yosha ni yoru keisha sosei chikka titan himaku no sakusei", QUARTERLY JOURNAL OF THE JAPAN WELDING SOCIETY RONBUNSHU, vol. 14, no. 2, 5 May 1996 (1996-05-05), pages 443 - 448, XP002966382 * |
See also references of EP1394865A4 * |
Also Published As
Publication number | Publication date |
---|---|
TW550835B (en) | 2003-09-01 |
JP2002368264A (ja) | 2002-12-20 |
EP1394865A4 (en) | 2007-10-24 |
DE60229382D1 (de) | 2008-11-27 |
US20040209390A1 (en) | 2004-10-21 |
US6875629B2 (en) | 2005-04-05 |
EP1394865B1 (en) | 2008-10-15 |
JP3812368B2 (ja) | 2006-08-23 |
EP1394865A1 (en) | 2004-03-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3812368B2 (ja) | Iii族窒化物系化合物半導体素子及びその製造方法 | |
JP3963068B2 (ja) | Iii族窒化物系化合物半導体素子の製造方法 | |
KR100532645B1 (ko) | Ⅲ족 질화물계 화합물 반도체 소자 | |
US6713789B1 (en) | Group III nitride compound semiconductor device and method of producing the same | |
TWI394289B (zh) | 以單晶氮化物為主之半導體基底及使用彼以製造高品質以氮化物為主之發光裝置的方法 | |
US7915147B2 (en) | Group III nitride compound semiconductor device | |
JP2001094150A (ja) | Iii族窒化物系化合物半導体素子 | |
JP2010192770A (ja) | エピタキシャルウエハを形成する方法、及び半導体素子を作製する方法 | |
JP2000286202A (ja) | Iii族窒化物系化合物半導体素子の製造方法 | |
JP2006013467A (ja) | 窒化ガリウム系半導体積層構造体、その製造方法、及びそれを用いた化合物半導体素子、発光素子 | |
JP3702721B2 (ja) | Iii族窒化物系化合物半導体素子 | |
JP2006093508A (ja) | 半導体素子及びその製造方法。 | |
JP5097661B2 (ja) | Iii族窒化物化合物半導体装置 | |
JP2003188414A (ja) | 半導体発光素子の製造方法 | |
JP2000286499A (ja) | Iii族窒化物系化合物半導体素子 | |
JP2004096133A (ja) | Iii族窒化物系化合物半導体素子 | |
JP2003060229A (ja) | 半導体発光素子及びその製造方法 | |
JPH11145517A (ja) | GaN系半導体層を含む素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SI SK SL TJ TM TN TR TT TZ UA UG US UZ VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2002730875 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 10479590 Country of ref document: US |
|
WWP | Wipo information: published in national office |
Ref document number: 2002730875 Country of ref document: EP |
|
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |