WO2002095086A1 - Systeme de refroidissement par fluide de refroidissement et dispositif de traitement equipe de ce systeme de refroidissement - Google Patents

Systeme de refroidissement par fluide de refroidissement et dispositif de traitement equipe de ce systeme de refroidissement Download PDF

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Publication number
WO2002095086A1
WO2002095086A1 PCT/JP2002/004808 JP0204808W WO02095086A1 WO 2002095086 A1 WO2002095086 A1 WO 2002095086A1 JP 0204808 W JP0204808 W JP 0204808W WO 02095086 A1 WO02095086 A1 WO 02095086A1
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WO
WIPO (PCT)
Prior art keywords
cooling
flow path
bypass
valve
shower head
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2002/004808
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English (en)
French (fr)
Japanese (ja)
Inventor
Koichi Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to US10/477,632 priority Critical patent/US7604042B2/en
Priority to KR1020037012125A priority patent/KR100807415B1/ko
Publication of WO2002095086A1 publication Critical patent/WO2002095086A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Definitions

  • the present invention relates to a cooling mechanism using a cooling liquid for cooling a member heated by a heating means, and a processing apparatus including such a cooling mechanism for performing a process such as film formation on a semiconductor wafer or the like using a processing gas.
  • a cooling mechanism using a cooling liquid for cooling a member heated by a heating means and a processing apparatus including such a cooling mechanism for performing a process such as film formation on a semiconductor wafer or the like using a processing gas.
  • various processes such as a film forming process, an etching process, an oxidation process, and a diffusion process are performed on a semiconductor wafer formed of a silicon substrate or the like.
  • reaction by-products adhere to the surface of the shower head for introducing the processing gas into the processing container. And, this kind of reaction by-product causes generation of particles and the like at the time of processing. Therefore, in order to remove reaction by-products without opening the processing container to the atmosphere, sublimation of the reaction by-products is performed regularly or irregularly by heating the shower head or the like. I have.
  • FIG. 3 is a schematic diagram showing a conventional semiconductor wafer processing apparatus.
  • the processing apparatus has a processing container 4 which can be evacuated from an exhaust port 2 provided at a lower portion.
  • a susceptor 8 having a resistance heating heater 6 is provided in the processing container 4, and the semiconductor wafer W is mounted on the susceptor 8.
  • a shower head 12 having a number of gas outlets 10 is attached to a ceiling plate 14 of the processing container 4.
  • the shower head 12 is for introducing a processing gas such as a film forming gas into the processing container 4.
  • a resistance heating type heater 16 is embedded for heating the shower head as needed.
  • the shower head 12 is indirectly attached to the ceiling plate 14 when necessary.
  • a cooling pipe 18 for cooling is embedded.
  • a cooling liquid C such as cooling water flows through the cooling pipe 18 by a pump 20.
  • the shower head 12 is heated to a temperature at which the reaction by-products sublime (for example, about 160 ° C.) by energizing the heater 16 overnight, and this temperature is maintained for a predetermined time. Then, after sublimation of the reaction by-product, the temperature of the shower head 12 is lowered immediately in order to perform a normal process (for example, a film forming process). That is, a cooling liquid is caused to flow through the cooling pipe 18 so that the shower head 12 is indirectly cooled to a temperature at which a film forming process can be performed (for example, about 60 ° C.).
  • the cooling liquid flows through the cooling pipe 18 of the ceiling plate 14 to which the shower head 12 is attached, and the shower head 12 is indirectly cooled, so that cooling is performed.
  • the required time is long (for example, 20 minutes or more), which causes a decrease in throughput.
  • the present invention has been made in view of the above points, and from a first viewpoint, in a cooling mechanism for cooling a member heated by a heating means, A coolant main passage having a cooling passage passing therethrough, a bypass passage connected to the main passage so as to bypass the member, and a flow of the coolant in the cooling passage when the temperature of the member is raised. And a cooling liquid control system that controls the flow of the cooling liquid so that the cooling liquid flows through both the cooling flow path and the bypass flow path when the temperature of the member is lowered. I will provide a.
  • the coolant control system may include: a branch portion of the main flow path, a branch portion with the bypass flow path; an inlet opening / closing valve interposed between an inlet side of the cooling flow path; An outlet opening / closing valve interposed between the junction with the bypass flow passage, and an outlet side of the cooling flow passage; a bypass opening / closing valve provided in the bypass flow passage; A valve controller for controlling the outlet on-off valve and the bypass on-off valve.
  • a pressure relief valve is connected to at least one of the main flow path between the inlet side of the cooling flow path and the inlet opening / closing valve and between the outlet side of the cooling flow path and the outlet opening / closing valve. It is preferred that
  • a processing container for accommodating an object to be processed, a shower head for introducing a processing gas into the processing container, and an increase in the temperature of the shower head.
  • a heating means for causing the main body to have a cooling flow path passing through the shower head; a bypass flow path connected to the main flow path so as to bypass the shower head; When the temperature of the shower head rises, the flow of the cooling liquid in the cooling flow path is stopped, and when the temperature of the shower head drops, the flow of the cooling liquid flows in both the cooling flow path and the bypass flow path.
  • a cooling liquid control system for controlling the pressure.
  • bypass flow path is thermally separated from the shower head.
  • FIG. 1 is a schematic diagram showing an embodiment of a processing apparatus provided with a cooling mechanism according to the present invention.
  • FIG. 2 is a diagram for explaining the operation of the cooling mechanism shown in FIG. 1 in (A) a normal process, (B) a rising temperature of a shower head, and (C) a falling temperature of a shower head.
  • FIG. 3 is a schematic diagram showing a processing apparatus provided with a conventional cooling mechanism.
  • the processing apparatus 22 shown in FIG. 1 has a processing container 24 formed into a cylindrical shape with, for example, aluminum or the like.
  • a susceptor 26 for mounting a semiconductor wafer W as an object to be processed is provided on the upper surface so as to rise from the bottom.
  • the susceptor 26 includes a resistance heating heater 28 as a heating source for the wafer W. Note that a heating lamp may be used instead of the resistance heating heater 28.
  • An exhaust port 30 is provided at the bottom of the processing container 24.
  • the exhaust port 30 is connected to an exhaust system provided with a vacuum pump or the like (not shown), so that the atmosphere in the processing container 24 can be evacuated.
  • a gate valve 32 that can be opened and closed is provided on the side wall of the processing container 24. The semiconductor wafer W is carried in / out of the processing container 24 via the gate valve 32.
  • the ceiling of the processing container 24 is closed by an openable / closable, for example, aluminum ceiling plate 34.
  • a shower head 36 for introducing a processing gas into the processing container 24 is attached to a lower surface side of the ceiling plate 34.
  • the first head 36 has a shower head main body 38 formed of, for example, aluminum in a short cylindrical shape. Inside the main body 38, a gas diffusion chamber 40 is formed.
  • a gas introduction port 42 is formed in communication with the gas diffusion chamber 40, and a predetermined processing gas is introduced into the gas diffusion chamber 40.
  • a plurality of gas inlets 42 are provided according to the type of gas used.
  • a number of gas outlets 4 4 communicating with the gas diffusion chamber 40 for supplying the processing gas to the processing space S are provided. Is provided. Note that a diffusion plate having diffusion holes for diffusing gas may be provided in the gas diffusion chamber 40. Also, a number of rod-shaped resistance heating type head heaters 46 are embedded at predetermined intervals in the circumferential direction as heating means for raising the temperature of the shower head 36 on the side wall of the shower head body 38. -It is rare. Each head heater 46 extends through the ceiling plate 34 substantially vertically in the side wall of the shutter head body 38. With these heads 46, the shower head body 38 can be directly heated as needed. Instead of a rod-shaped heater, a sheath heater may be embedded in the head body 38 in a ring shape as the head heater.
  • a cooling mechanism 48 which is a feature of the present invention is provided in association with the shower head 36.
  • the cooling mechanism 48 has a cooling flow path 50 that spirally extends through the side wall of the shower head body 38 in the circumferential direction.
  • An inlet side flow path 52 and an outlet side flow path 54 are connected to the inlet side and the outlet side of the cooling flow path 50 in the shower head 36, respectively.
  • the cooling channel 50, the inlet channel 52, and the outlet channel 54 constitute a main channel for the coolant.
  • cooling water can be used as the cooling liquid.
  • Each of the flow paths 52, 54 is provided with an inlet opening / closing valve V1 and an outlet opening / closing valve V2.
  • a water supply pump 56 for supplying cooling water is provided in the inlet-side flow path 52.
  • a bypass flow path 56 thermally separated from the shear head 36 is connected to the main flow path so as to bypass the cooling flow path 50 of the shower head 36.
  • the bypass flow path 56 includes a portion between the inlet open / close valve VI of the inlet flow path 52 and the water pump 56 and a downstream of the outlet open / close valve V 2 of the outlet flow path 54. It is connected to communicate with the side part.
  • a bypass opening / closing valve V3 for opening and closing the bypass passage 56 is provided upstream of the bypass passage 56.
  • Each of the on-off valves VI to V3 and a valve controller 58 for controlling their opening and closing constitute a coolant control system 60. With this coolant control system 60, the shower head 36
  • a pressure relief valve V 4 is connected (via a branch pipe) between the outlet side of the cooling channel 50 and the outlet on-off valve V 2 in the outlet side channel 54.
  • the valve V4 allows the shower head 36 to be opened when the pressure in the cooling channel 50 exceeds a set pressure when the temperature of the shower head 36 is raised.
  • the opening pressure of the relief valve V 4 is higher than the pressure of the coolant supplied by the pump 56, and is set to, for example, about 2 kg / cm 2 .
  • a relief valve is provided between the inlet side of the cooling flow path 50 and the inlet opening / closing valve V1 in the inlet side flow path 52. You may connect.
  • a pressure gauge 64 for monitoring the pressure in the cooling channel 50 is connected between the inlet side of the cooling channel 50 in the inlet channel 52 and the inlet on-off valve VI.
  • the wafer W is placed on the susceptor 26 in the processing container 24. Then, the wafer W on the susceptor 26 is maintained at a predetermined processing temperature by the heater 28. In addition, a predetermined processing gas is supplied from the shower head 36 into the processing container 24, and the processing is performed while maintaining the predetermined processing pressure by exhausting the atmosphere in the processing container 24.
  • the wafer as a process temperature W is maintained at about 410 to 450 ° C., and the processing pressure is maintained at about 106 to 400 Pa.
  • cooling water C is caused to flow through the cooling passage 50 of the shower head main body 38 to maintain the shower head main body 38 at a constant temperature of, for example, about 60 ° C. I do.
  • the valve controller 58 is
  • the inlet on-off valve V1 and the outlet on-off valve V2 are each opened, but the bypass on-off valve V3 is closed and the cooling water does not flow through the bypass passage 56. To do.
  • the operation of removing the deposited reaction by-products is performed, for example, every time a predetermined number of wafers are processed, or irregularly.
  • the temperature of the J and the metal body 38 is raised to the sublimation temperature of the reaction by-product in the shower.
  • the reaction by-product is Ti F x (x is a positive integer)
  • it can be easily removed by sublimation at a temperature of about 160 ° C.
  • the inlet on-off valve VI and the outlet on-off valve V2 are both closed, and the flow of the cooling water in the cooling passage 50 of the shower head body 38 is reduced. Stop.
  • the bypass on-off valve V 3 of the bypass flow path 56 is opened, and the cooling water C flows through the bypass flow path 56. That is, the cooling water C is caused to flow through the bypass passage 56 so as to bypass the cooling passage 50 of the shower head body 38.
  • sufficient power is applied to the head heater 46 (FIG. 1) embedded in the shower head body 38 to raise the temperature of the shower head body 38 to the above-mentioned sublimation temperature (for example, 160 ° C.). Let it.
  • the reaction by-product adhering to the bottom side of the shower head body 38 is sublimated and blown off. Since the atmosphere in the processing container 24 is evacuated, the sublimed reaction by-product gas is discharged out of the container.
  • the pressure relief valve V4 automatically opens to act to release the pressure. Therefore, it is possible to prevent the pressure in the cooling channel 50 from excessively increasing.
  • the shower head main body 38 in a high temperature state of, for example, 160 ° C. is cooled as quickly as possible to a temperature at which a film forming process can be performed, for example, 60 ° C.
  • the inlet on-off valve VI and the outlet on-off valve V2 are both opened while the bypass on-off valve V3 is kept open. This allows the cooling water C to flow not only in the bypass channel 56 but also in the cooling channel 50, and the shower head Cool the main body 3 8 at a stretch.
  • cooling water flows into the cooling channel 50 of the shower head main body 38 at a high temperature of 160 ° C
  • the cooling water is rapidly heated and vaporized at the beginning. I do.
  • the pressure in the cooling passage 50 rises sharply, and this pressure tends to go back not only downstream but also upstream in the flow direction of the cooling water C.
  • bypass flow path 56 since the bypass flow path 56 is in a state here, the pressure that has risen sharply passes through the bypass flow path 56 together with the steam. In addition, since the cooling water flows through the bypass passage 56, the cooling water efficiently cools and condenses the steam, and the pressure is reduced. In this way, by releasing the pressure in the bypass flow path 56, it is possible to prevent an excessive pressure rise. In addition, since the vapor pressure toward the upstream side in the cooling channel 50 is reduced, the flow of the cooling water in the cooling channel 50 hardly stops. Therefore, it is possible to quickly cool the shower head body 38 to a predetermined temperature.
  • the temperature of the shower head main body 38 can be rapidly lowered without damaging the coolant system due to pressure. Then, after performing the operation of removing the reaction by-product, the process can be promptly shifted to the next film forming process, so that the process throughput can be improved.
  • the processing temperature and the sublimation temperature of the reaction by-product in the above embodiment are merely examples, and are not limited thereto.
  • the cooling water is used here as the cooling liquid, for example, a fluorine-based inert liquid such as fluorinert (trademark) or an aqueous solution of ethylene glycol can also be used as the cooling liquid.
  • the cooling mechanism of the film forming process has been described as an example, but the present invention is not limited to this. Not done. That is, the present invention can be applied to any processing apparatus (including, for example, a plasma processing apparatus) including a cooling mechanism using a cooling liquid for cooling a member (including, for example, a susceptor) heated by the heating means. It is.
  • the object to be processed is not limited to a semiconductor wafer, and can be applied to an LCD substrate, a glass substrate, and the like.o

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
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  • Computer Hardware Design (AREA)
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  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
PCT/JP2002/004808 2001-05-18 2002-05-17 Systeme de refroidissement par fluide de refroidissement et dispositif de traitement equipe de ce systeme de refroidissement Ceased WO2002095086A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/477,632 US7604042B2 (en) 2001-05-18 2002-05-17 Cooling mechanism with coolant, and treatment device with cooling mechanism
KR1020037012125A KR100807415B1 (ko) 2001-05-18 2002-05-17 냉각액에 의한 냉각 기구 및 냉각 기구를 구비한 처리 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001150101A JP4720019B2 (ja) 2001-05-18 2001-05-18 冷却機構及び処理装置
JP2001-150101 2001-05-18

Publications (1)

Publication Number Publication Date
WO2002095086A1 true WO2002095086A1 (fr) 2002-11-28

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US (1) US7604042B2 (enExample)
JP (1) JP4720019B2 (enExample)
KR (1) KR100807415B1 (enExample)
WO (1) WO2002095086A1 (enExample)

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JP5168907B2 (ja) 2007-01-15 2013-03-27 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法及び記憶媒体
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